One‐dimensional scanning optical beam induced current (OBIC) measurements have been carried out on polymer bulk heterojunction (BHJ) photovoltaic cells with a planar, or lateral configuration. The planar P3HT:PCBM cells have parallel aluminum or gold electrodes that are 390 to 560 micrometers apart. When a focused laser beam is scanned across the electrode gap, photocurrent or photovoltage are recorded as a function of beam position along with the transmission of the excitation beam. Despite the large electrode gap size, cells with symmetric Al/Al electrodes exhibit significant photocurrent and photovoltage which are the highest at the electrode interfaces and null at the cell center. The OBIC in these large planar polymer BHJ cells is attributed to the metal/BHJ blend Schottky junction. The larger Schottky barrier of the Al/BHJ junction gives rise to a stronger OBIC response than the Au/BHJ junction. The photocurrent and photovoltage always have opposite signs and are anti‐symmetric about the cell center. In asymmetric Al/Au cells, the electrode work function difference contributes an additional built‐in field/potential drop and significantly modifies the photocurrent and photovoltage profiles. The depletion width of the Al/BHJ Schottky junction is 110‐120 µm, while the minority electron diffusion length is determined to be 43.8 µm.This article is protected by copyright. All rights reserved.
{"title":"Long Range Charge Carrier Transport in Planar Polymer Bulk‐heterojunction Photovoltaic Cells","authors":"Faleh AlTal, Jun Gao","doi":"10.1002/pssr.202400139","DOIUrl":"https://doi.org/10.1002/pssr.202400139","url":null,"abstract":"One‐dimensional scanning optical beam induced current (OBIC) measurements have been carried out on polymer bulk heterojunction (BHJ) photovoltaic cells with a planar, or lateral configuration. The planar P3HT:PCBM cells have parallel aluminum or gold electrodes that are 390 to 560 micrometers apart. When a focused laser beam is scanned across the electrode gap, photocurrent or photovoltage are recorded as a function of beam position along with the transmission of the excitation beam. Despite the large electrode gap size, cells with symmetric Al/Al electrodes exhibit significant photocurrent and photovoltage which are the highest at the electrode interfaces and null at the cell center. The OBIC in these large planar polymer BHJ cells is attributed to the metal/BHJ blend Schottky junction. The larger Schottky barrier of the Al/BHJ junction gives rise to a stronger OBIC response than the Au/BHJ junction. The photocurrent and photovoltage always have opposite signs and are anti‐symmetric about the cell center. In asymmetric Al/Au cells, the electrode work function difference contributes an additional built‐in field/potential drop and significantly modifies the photocurrent and photovoltage profiles. The depletion width of the Al/BHJ Schottky junction is 110‐120 µm, while the minority electron diffusion length is determined to be 43.8 µm.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The artificial nociceptor is a device that simulates the biological nociception system, which has a wide range of applications in the fields of medicine, rehabilitation, and robotics. Multimodal nociceptors can respond to diverse stimuli, including visual, mechanical, and thermal, etc., and then convert them into neural signals for processing by the brain. Here, a back‐gate optoelectronic transistor based on 2‐dimensional InSe/MoS2 heterostructure is demonstrated, by employing energy band alignment of the heterojunction, the device exhibits high sensitivity (106) and high responsivity (330 AW‐1) to harmful UV irradiation, which can be exploited to emulate the key features of nociceptors, including “threshold”, “relaxation”, “no adaptation” and “sensitization”. Moreover, the device can be operated in a two‐terminal mode, memristive characteristics is obtained through applying source‐drain voltages. Then, artificial nociceptive behaviors respond to external electrical pulses have been successfully emulated. Finally, the modulation of nociceptive sensitivity can be achieved through the controlling gate bias, which fully demonstrates the potential of our device for the application of bio‐mimetic multimodal artificial nociceptors in future neuromorphic sensory system.This article is protected by copyright. All rights reserved.
{"title":"Optoelectronic transistor based on InSe/MoS2 heterostructure for multimodal nociceptor","authors":"Haobin Wang, Yifei Yang, Niannian Yu, Ziqi Chen, Junhui Yuan, Jiafu Wang","doi":"10.1002/pssr.202400111","DOIUrl":"https://doi.org/10.1002/pssr.202400111","url":null,"abstract":"The artificial nociceptor is a device that simulates the biological nociception system, which has a wide range of applications in the fields of medicine, rehabilitation, and robotics. Multimodal nociceptors can respond to diverse stimuli, including visual, mechanical, and thermal, etc., and then convert them into neural signals for processing by the brain. Here, a back‐gate optoelectronic transistor based on 2‐dimensional InSe/MoS<jats:sub>2</jats:sub> heterostructure is demonstrated, by employing energy band alignment of the heterojunction, the device exhibits high sensitivity (10<jats:sup>6</jats:sup>) and high responsivity (330 AW<jats:sup>‐1</jats:sup>) to harmful UV irradiation, which can be exploited to emulate the key features of nociceptors, including “threshold”, “relaxation”, “no adaptation” and “sensitization”. Moreover, the device can be operated in a two‐terminal mode, memristive characteristics is obtained through applying source‐drain voltages. Then, artificial nociceptive behaviors respond to external electrical pulses have been successfully emulated. Finally, the modulation of nociceptive sensitivity can be achieved through the controlling gate bias, which fully demonstrates the potential of our device for the application of bio‐mimetic multimodal artificial nociceptors in future neuromorphic sensory system.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P‐type NiOx was employed for the fabrication of NiO/Ga2O3 p‐n diode. Addressing the challenge of low hole mobility in NiOx, an extensive investigation into the impact of oxygen stoichiometry engineering in NiOx was conducted. The meticulous optimization of the O2/Ar ratio to 30% during the sputtering process resulted in significant improvements, notably achieving enhanced hole mobility of 1.61 cm2/V·s. It led to a low specific on‐resistance of 2.79 mΩ·cm2 and a high rectification ratio of ∽1011, underscoring the efficacy of recombination transport mechanism driven by enhanced hole mobility. Detailed band alignment analysis between NiOx and Ga2O3 revealed a small band offset, with a valence band offset of 2.47 eV and a conduction band offset of 1.70 eV. It suggests a tailored modification of band alignment through the engineering the oxygen stoichiometry in NiOx, facilitating enhanced recombination conduction. The device exhibits a suprior breakdown voltage (Vb) of 2780 V and a notable Baliga’s figure of merit (BFOM) of 2.77 GW/cm2, surpassing the SiC unipolar figure of merit. The insights gained from this work are expected to inform future designs and optimizations of high‐performance Ga2O3 electronic devices.This article is protected by copyright. All rights reserved.
{"title":"Oxygen Stoichiometry Engineering in P‐Type NiOx for High‐Performance NiO/Ga2O3 Heterostructure p‐n Diode","authors":"Yuehua Hong, Xuefeng Zheng, Hao Zhang, Yunlong He, Tian Zhu, Kai Liu, Ang Li, Xiaohua Ma, Weidong Zhang, Jianfu Zhang, Yue Hao","doi":"10.1002/pssr.202400109","DOIUrl":"https://doi.org/10.1002/pssr.202400109","url":null,"abstract":"P‐type NiO<jats:sub>x</jats:sub> was employed for the fabrication of NiO/Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> p‐n diode. Addressing the challenge of low hole mobility in NiO<jats:sub>x</jats:sub>, an extensive investigation into the impact of oxygen stoichiometry engineering in NiO<jats:sub>x</jats:sub> was conducted. The meticulous optimization of the O<jats:sub>2</jats:sub>/Ar ratio to 30% during the sputtering process resulted in significant improvements, notably achieving enhanced hole mobility of 1.61 cm<jats:sup>2</jats:sup>/V·s. It led to a low specific on‐resistance of 2.79 mΩ·cm<jats:sup>2</jats:sup> and a high rectification ratio of ∽10<jats:sup>11</jats:sup>, underscoring the efficacy of recombination transport mechanism driven by enhanced hole mobility. Detailed band alignment analysis between NiO<jats:sub>x</jats:sub> and Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> revealed a small band offset, with a valence band offset of 2.47 eV and a conduction band offset of 1.70 eV. It suggests a tailored modification of band alignment through the engineering the oxygen stoichiometry in NiO<jats:sub>x</jats:sub>, facilitating enhanced recombination conduction. The device exhibits a suprior breakdown voltage (V<jats:sub>b</jats:sub>) of 2780 V and a notable Baliga’s figure of merit (BFOM) of 2.77 GW/cm<jats:sup>2</jats:sup>, surpassing the SiC unipolar figure of merit. The insights gained from this work are expected to inform future designs and optimizations of high‐performance Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> electronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
: Perovskite‐inspired materials are potential alternatives to lead halide perovskites, as they not only inherit the benign optoelectronic properties, but also diminish the stability and toxicity issues of lead halide perovskites. As a newly discovered perovskite‐inspired material, Cu2AgBiI6 has exhibited promising potential for photovoltaic applications. However, studies on its fundamental properties related to photovoltaic performance are scarce, particularly from a theoretical perspective. Here, we systematically investigate the effective lifetime of non‐equilibrium carriers (photo‐excited charge carriers), a critical property affecting the photovoltaic performance of Cu2AgBiI6, based on the non‐adiabatic molecular dynamics simulations. We find that under the standard solar spectrum illumination, the dominant recombination mechanism affecting the effective lifetime can be band‐to‐band nonradiative decay, band‐to‐band radiative decay, or Shockey‐Read‐Hall (SRH) defect‐assisted decay. The specific mechanism is highly dependent on the radiative recombination coefficient and the density of defect recombination levels. The effective lifetime can vary from 0.1 ms to 10 ns. When considering different illumination conditions (generation rates), Auger decay can also become the dominant recombination mechanism, with the effective lifetime varying from 0.1 s to 0.1 ns. These findings could be vital for further experimental researches aimed at enhancing the power conversion efficiency of Cu2AgBiI6‐based solar devices.This article is protected by copyright. All rights reserved.
{"title":"Effective lifetime of non‐equilibrium carriers in perovskite‐inspired Cu2AgBiI6","authors":"Zenghua Cai, Chen-Min Dai, Chunlan Ma","doi":"10.1002/pssr.202400134","DOIUrl":"https://doi.org/10.1002/pssr.202400134","url":null,"abstract":": Perovskite‐inspired materials are potential alternatives to lead halide perovskites, as they not only inherit the benign optoelectronic properties, but also diminish the stability and toxicity issues of lead halide perovskites. As a newly discovered perovskite‐inspired material, Cu<jats:sub>2</jats:sub>AgBiI<jats:sub>6</jats:sub> has exhibited promising potential for photovoltaic applications. However, studies on its fundamental properties related to photovoltaic performance are scarce, particularly from a theoretical perspective. Here, we systematically investigate the effective lifetime of non‐equilibrium carriers (photo‐excited charge carriers), a critical property affecting the photovoltaic performance of Cu<jats:sub>2</jats:sub>AgBiI<jats:sub>6</jats:sub>, based on the non‐adiabatic molecular dynamics simulations. We find that under the standard solar spectrum illumination, the dominant recombination mechanism affecting the effective lifetime can be band‐to‐band nonradiative decay, band‐to‐band radiative decay, or Shockey‐Read‐Hall (SRH) defect‐assisted decay. The specific mechanism is highly dependent on the radiative recombination coefficient and the density of defect recombination levels. The effective lifetime can vary from 0.1 ms to 10 ns. When considering different illumination conditions (generation rates), Auger decay can also become the dominant recombination mechanism, with the effective lifetime varying from 0.1 s to 0.1 ns. These findings could be vital for further experimental researches aimed at enhancing the power conversion efficiency of Cu<jats:sub>2</jats:sub>AgBiI<jats:sub>6</jats:sub>‐based solar devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bin Wei, Lin Lin, Jian Zhang, Zhiwen Zhan, Ziwei Cheng, Junru Jiang
Diamond anvil cells have garnered significant attention in high‐pressure studies as a valuable tool for investigating material preparation, phase transition dynamics, and ultra‐high‐pressure physical chemistry. Its potential applications span fields such as materials science, condensed matter physics, chemistry, and geology. This study conducted a comprehensive review of the utilization of laser‐heated diamond anvil cell devices in conjunction with in situ optical characterization techniques, such as X‐ray and Raman scattering. Further, diverse in situ performance measurement methods encompassing electrical, thermal, magnetic, and acoustic analyses were examined. The development and role of the prevailing in situ measurement techniques have been described, along with the current progress in applied research for each technique. This study aims to facilitate the discovery of new structures and properties of materials under high pressure–temperature conditions.This article is protected by copyright. All rights reserved.
金刚石砧室作为研究材料制备、相变动力学和超高压物理化学的重要工具，在高压研究中备受关注。其潜在应用领域包括材料科学、凝聚态物理、化学和地质学。本研究全面回顾了激光加热金刚石砧单元设备与 X 射线和拉曼散射等原位光学表征技术的结合使用情况。此外，还研究了包括电学、热学、磁学和声学分析在内的各种原位性能测量方法。本研究介绍了常用原位测量技术的发展和作用，以及每种技术目前的应用研究进展。本研究旨在促进高压高温条件下材料新结构和新性能的发现。本文受版权保护。
{"title":"In situ measurement techniques using diamond anvil cell at high pressure–temperature conditions: A review","authors":"Bin Wei, Lin Lin, Jian Zhang, Zhiwen Zhan, Ziwei Cheng, Junru Jiang","doi":"10.1002/pssr.202300469","DOIUrl":"https://doi.org/10.1002/pssr.202300469","url":null,"abstract":"Diamond anvil cells have garnered significant attention in high‐pressure studies as a valuable tool for investigating material preparation, phase transition dynamics, and ultra‐high‐pressure physical chemistry. Its potential applications span fields such as materials science, condensed matter physics, chemistry, and geology. This study conducted a comprehensive review of the utilization of laser‐heated diamond anvil cell devices in conjunction with in situ optical characterization techniques, such as X‐ray and Raman scattering. Further, diverse in situ performance measurement methods encompassing electrical, thermal, magnetic, and acoustic analyses were examined. The development and role of the prevailing in situ measurement techniques have been described, along with the current progress in applied research for each technique. This study aims to facilitate the discovery of new structures and properties of materials under high pressure–temperature conditions.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141166399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Metal halide perovskites have aroused worldwide efforts for developing optoelectronic devices due to their unique optical properties and low‐cost simple fabrication process. In recent years, various perovskites based miniaturized optical devices have been actively investigated owing to their record‐breaking efficiency in different fields, including environmental monitoring, remote sensing, biomedical imaging, and optical communications. In this review, we staged a succinct and critical survey of recently discovered organic–inorganic perovskite photodetectors providing insights into their structural properties and key performance parameters. Firstly, we introduce key features of perovskites‐based photodetectors emphasizing their optoelectronic and electrical properties. Then, we discuss the polarization‐sensitive detection of metal halide perovskites by using polarization selective optical structures. The bandgap engineering for tailoring the properties of perovskite photodetectors by changing the chemical composition and material structures is also highlighted in this report. Finally, we present a perspective on future opportunities and current challenges for designing perovskite based optoelectronic devices.This article is protected by copyright. All rights reserved.
{"title":"Strategic review of organic–inorganic perovskite photodetectors","authors":"Neeraj Goel, Aditya Kushwaha, Monika Kwoka, Mahesh Kumar","doi":"10.1002/pssr.202400110","DOIUrl":"https://doi.org/10.1002/pssr.202400110","url":null,"abstract":"Metal halide perovskites have aroused worldwide efforts for developing optoelectronic devices due to their unique optical properties and low‐cost simple fabrication process. In recent years, various perovskites based miniaturized optical devices have been actively investigated owing to their record‐breaking efficiency in different fields, including environmental monitoring, remote sensing, biomedical imaging, and optical communications. In this review, we staged a succinct and critical survey of recently discovered organic–inorganic perovskite photodetectors providing insights into their structural properties and key performance parameters. Firstly, we introduce key features of perovskites‐based photodetectors emphasizing their optoelectronic and electrical properties. Then, we discuss the polarization‐sensitive detection of metal halide perovskites by using polarization selective optical structures. The bandgap engineering for tailoring the properties of perovskite photodetectors by changing the chemical composition and material structures is also highlighted in this report. Finally, we present a perspective on future opportunities and current challenges for designing perovskite based optoelectronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141150537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anthony Albanese, Martina Tomelleri, Lara Karam, Jean-Baptiste Dory, Christophe Licitra, Benoît Charbonnier, Jean-Baptiste Jager, Aurélien Coillet, Benoît Cluzel, Pierre Noé
The highly promising linear and non‐linear optical properties of innovative thin films of GeSe1–xTex chalcogenide materials in the amorphous as‐deposited state, and after crystallization, are revealed here. These innovative alloys bridge the gap between two families of materials: chalcogenide glasses (GeSe) and phase‐change materials (GeTe). Their unique optical properties make them attractive candidates for reconfigurable and non‐linear photonic applications in the infrared. In this context we show how, by varying the Te content of GeSe1–xTex thin films, it is possible to tailor their linear and non‐linear optical properties to optimize them for a wide range of innovative applications.This article is protected by copyright. All rights reserved.
本文揭示了创新的 GeSe1-x Te x 卤化物薄膜在非晶沉积态和结晶后极具前景的线性和非线性光学特性。这些创新合金弥补了掺杂玻璃（GeSe）和相变材料（GeTe）两类材料之间的差距。它们独特的光学特性使其成为红外可重构和非线性光子应用的理想候选材料。在此背景下，我们展示了如何通过改变 GeSe1-x Te x 薄膜中 Te 的含量来定制其线性和非线性光学特性，从而优化它们，使其适用于广泛的创新应用。本文受版权保护。
{"title":"Linear and Nonlinear Optical Properties of GeSe1‐xTex Chalcogenide Materials Promising for On‐Chip Low and Ultra‐low Loss Reconfigurable Photonics and Nonlinear Devices","authors":"Anthony Albanese, Martina Tomelleri, Lara Karam, Jean-Baptiste Dory, Christophe Licitra, Benoît Charbonnier, Jean-Baptiste Jager, Aurélien Coillet, Benoît Cluzel, Pierre Noé","doi":"10.1002/pssr.202400129","DOIUrl":"https://doi.org/10.1002/pssr.202400129","url":null,"abstract":"The highly promising linear and non‐linear optical properties of innovative thin films of GeSe<jats:sub>1–<jats:italic>x</jats:italic> </jats:sub>Te<jats:sub> <jats:italic>x</jats:italic> </jats:sub> chalcogenide materials in the amorphous as‐deposited state, and after crystallization, are revealed here. These innovative alloys bridge the gap between two families of materials: chalcogenide glasses (GeSe) and phase‐change materials (GeTe). Their unique optical properties make them attractive candidates for reconfigurable and non‐linear photonic applications in the infrared. In this context we show how, by varying the Te content of GeSe<jats:sub>1–<jats:italic>x</jats:italic> </jats:sub>Te<jats:sub> <jats:italic>x</jats:italic> </jats:sub> thin films, it is possible to tailor their linear and non‐linear optical properties to optimize them for a wide range of innovative applications.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141058896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Taras Palasyuk, Cezariusz Jastrzebski, Aleksander Khachapuridze, Elzbieta Litwin-Staszewska, Tadeusz Suski, Izabella Grzegory, Sylwester Porowski
Here experimental observation of the pressure‐induced softening of the zone‐edge transverse acoustical TA(X)ze phonon in the zincblende Indium Antimonide is for the first time reported. Experimental data allowed for determination of Grüneisen parameter for the TA(X)ze phonon mode. Our density functional theory calculations (DFT) performed within quasiharmonic approximation (QHA) at 0 K also revealed the softening of the TA(X)ze at high pressure, although the experimental value of its frequency shift is almost three times smaller than the theoretical one. In contrast, pressure dependences of optical phonons were well reproduced in our calculations. Similar calculations for GaSb and InP resulted in good agreement with available experimental data for optical and, as opposed to InSb, also for TA(X)ze phonons. The fact that the quasiharmonic theory works well for GaSb and InP may suggest that anharmonicity of acoustical phonons in these compounds is insignificant at room temperature. The possibility of enhanced anharmonicity of TA(X)ze phonon in InSb is discussed. The pressure of transition derived from experimentally determined shift of TA(X)ze frequency for InSb does not fit the recently proposed model of Weinstein working well for over twenty semiconductors, which also shows the specificity of InSb especially in comparison to other cubic III‐V semiconductors.This article is protected by copyright. All rights reserved.
{"title":"Influence of Pressure on Phonon Properties of Indium Antimonide","authors":"Taras Palasyuk, Cezariusz Jastrzebski, Aleksander Khachapuridze, Elzbieta Litwin-Staszewska, Tadeusz Suski, Izabella Grzegory, Sylwester Porowski","doi":"10.1002/pssr.202400093","DOIUrl":"https://doi.org/10.1002/pssr.202400093","url":null,"abstract":"Here experimental observation of the pressure‐induced softening of the zone‐edge transverse acoustical TA(X)<jats:sub>ze</jats:sub> phonon in the zincblende Indium Antimonide is for the first time reported. Experimental data allowed for determination of Grüneisen parameter for the TA(X)<jats:sub>ze</jats:sub> phonon mode. Our density functional theory calculations (DFT) performed within quasiharmonic approximation (QHA) at 0 K also revealed the softening of the TA(X)<jats:sub>ze</jats:sub> at high pressure, although the experimental value of its frequency shift is almost three times smaller than the theoretical one. In contrast, pressure dependences of optical phonons were well reproduced in our calculations. Similar calculations for GaSb and InP resulted in good agreement with available experimental data for optical and, as opposed to InSb, also for TA(X)<jats:sub>ze</jats:sub> phonons. The fact that the quasiharmonic theory works well for GaSb and InP may suggest that anharmonicity of acoustical phonons in these compounds is insignificant at room temperature. The possibility of enhanced anharmonicity of TA(X)<jats:sub>ze</jats:sub> phonon in InSb is discussed. The pressure of transition derived from experimentally determined shift of TA(X)<jats:sub>ze</jats:sub> frequency for InSb does not fit the recently proposed model of Weinstein working well for over twenty semiconductors, which also shows the specificity of InSb especially in comparison to other cubic III‐V semiconductors.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140937127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zi Chun Liu, Jia Cheng Li, Hui Xia Yang, Han Yang, An Huang, De Dai, Yuan Huang, Yi Yun Zhang, Pui To Lai, Yuan Xiao Ma, Ye Liang Wang
Field‐effect transistors (FETs) with ultra‐wide bandgap semiconductor Ga2O3 have been fabricated by physical vapor deposition with advantages of low cost, wafer scale, and rapid production. The insulator‐like pristine Ga2O3 is converted to semiconductor by co‐sputtering Sn with post‐annealing, which demonstrates a 5.6 × 107 times higher on‐state current. Importantly, this Sn‐doped Ga2O3 sample shows a high breakdown voltage near 500 V. Furthermore, a 4 inch array of Sn‐doped Ga2O3 FETs with high‐k Ta2O5 gate dielectric has been fabricated on a silicon substrate, successfully showing a large on‐current density of 1.3 mA mm−1, a high ION/IOFF of 2.5 × 106, and a low threshold voltage of 3.9 V, which are extracted from the average 350 devices. This work paves a promising way for Ga2O3‐based nanoelectronics to serve medium‐high voltage with low cost, rapid, and wafer‐scale production.
利用物理气相沉积法制造出了超宽带隙半导体 Ga2O3 场效应晶体管 (FET)，具有成本低、晶圆规模大和生产速度快等优点。通过共溅射锡和后退火，类似绝缘体的原始 Ga2O3 被转化为半导体，导通电流提高了 5.6 × 107 倍。重要的是，这种掺杂了锡的 Ga2O3 样品显示出接近 500 V 的高击穿电压。此外，我们还在硅衬底上制作了一个 4 英寸的掺锡 Ga2O3 FET 阵列，该阵列采用高 k Ta2O5 栅极电介质，成功地显示出 1.3 mA mm-1 的大导通电流密度、2.5 × 106 的高 ION/IOFF，以及 3.9 V 的低阈值电压，这些都是从平均 350 个器件中提取出来的。这项工作为基于 Ga2O3 的纳米电子器件以低成本、快速和晶圆规模生产服务于中高电压铺平了道路。
{"title":"4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition","authors":"Zi Chun Liu, Jia Cheng Li, Hui Xia Yang, Han Yang, An Huang, De Dai, Yuan Huang, Yi Yun Zhang, Pui To Lai, Yuan Xiao Ma, Ye Liang Wang","doi":"10.1002/pssr.202400046","DOIUrl":"https://doi.org/10.1002/pssr.202400046","url":null,"abstract":"Field‐effect transistors (FETs) with ultra‐wide bandgap semiconductor Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> have been fabricated by physical vapor deposition with advantages of low cost, wafer scale, and rapid production. The insulator‐like pristine Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is converted to semiconductor by co‐sputtering Sn with post‐annealing, which demonstrates a 5.6 × 10<jats:sup>7</jats:sup> times higher on‐state current. Importantly, this Sn‐doped Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> sample shows a high breakdown voltage near 500 V. Furthermore, a 4 inch array of Sn‐doped Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> FETs with high‐k Ta<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub> gate dielectric has been fabricated on a silicon substrate, successfully showing a large on‐current density of 1.3 mA mm<jats:sup>−1</jats:sup>, a high <jats:italic>I</jats:italic><jats:sub>ON</jats:sub>/<jats:italic>I</jats:italic><jats:sub>OFF</jats:sub> of 2.5 × 10<jats:sup>6</jats:sup>, and a low threshold voltage of 3.9 V, which are extracted from the average 350 devices. This work paves a promising way for Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>‐based nanoelectronics to serve medium‐high voltage with low cost, rapid, and wafer‐scale production.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140936859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tim Kolbe, Hyun Kyong Cho, Sylvia Hagedorn, Jens Rass, Jan Ruschel, Sven Einfeldt, Markus Weyers
Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well barriers, and quantum well numbers are compared regarding their emission power, operation voltage, and lifetime. Electroluminescence measurements show higher emission power but also an increased operation voltage with increasing Al mole fraction in the n‐AlGaN contact layer. Furthermore, it was found that both the mean emission power and the device lifetime decrease with increasing Al mole fraction (82 % to 89 %) of the quantum well barriers and therefore with increasing barrier height. Finally, 226 nm LEDs with 6 and 9 quantum wells were compared. It was observed that the sample with 9 quantum wells shows an around 30 % lower mean emission power but on the other hand the L70 lifetime of these LEDs is higher by a factor of around five. Based on these optimizations, 226 nm LEDs with a maximum external quantum efficiency of 0.28 % (wall plug efficiency of 0.18 %) as well as an emission power of 2.1 mW and an operation voltage of 9.6 V at 200 mA were realized.This article is protected by copyright. All rights reserved.
{"title":"226 nm far‐ultraviolet‐C light emitting diodes with an emission power over 2 mW","authors":"Tim Kolbe, Hyun Kyong Cho, Sylvia Hagedorn, Jens Rass, Jan Ruschel, Sven Einfeldt, Markus Weyers","doi":"10.1002/pssr.202400092","DOIUrl":"https://doi.org/10.1002/pssr.202400092","url":null,"abstract":"Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well barriers, and quantum well numbers are compared regarding their emission power, operation voltage, and lifetime. Electroluminescence measurements show higher emission power but also an increased operation voltage with increasing Al mole fraction in the n‐AlGaN contact layer. Furthermore, it was found that both the mean emission power and the device lifetime decrease with increasing Al mole fraction (82 % to 89 %) of the quantum well barriers and therefore with increasing barrier height. Finally, 226 nm LEDs with 6 and 9 quantum wells were compared. It was observed that the sample with 9 quantum wells shows an around 30 % lower mean emission power but on the other hand the L70 lifetime of these LEDs is higher by a factor of around five. Based on these optimizations, 226 nm LEDs with a maximum external quantum efficiency of 0.28 % (wall plug efficiency of 0.18 %) as well as an emission power of 2.1 mW and an operation voltage of 9.6 V at 200 mA were realized.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140937260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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