Epitaxial thin films of tantalum‐doped β‐Ga2O3 (Ta‐Ga2O3) were grown on MgO (001) substrates to study the effect of Ta doping on the electrical properties of β‐Ga2O3 films. X‐ray diffraction measurements show that the films with different Ta doping concentrations are (00l)‐oriented single‐crystalline β‐Ga2O3 without impurity phases. The incorporation of the Ta element modifies the electrical properties of Ta‐Ga2O3 films significantly. At a very low doping ratio of 0.05 mol%, the Ta‐Ga2O3 film showed a minimum resistivity of 2.32 Ω·cm and a carrier concentration of 2.48×1017 cm‐3. The corresponding activation energy of Ta element in the film was 16.8 meV, suggesting that the Ta element is a promising shallow donor dopant. The XPS analysis confirms that the Fermi level of the Ga2O3 films shifts towards the conduction band minimum after the introduction of Ta ions. These results indicate that the transition metal element Ta could be an effective n‐type dopant for modulating the carrier transport behavior of β‐Ga2O3 films.This article is protected by copyright. All rights reserved.
在氧化镁（001）基底上生长了掺杂钽的β-Ga2O3（Ta-Ga2O3）外延薄膜，以研究掺杂Ta对β-Ga2O3薄膜电性能的影响。X 射线衍射测量结果表明，不同掺杂浓度 Ta 的薄膜都是取向 (00l) 的单晶 β-Ga2O3 ，没有杂质相。Ta元素的掺入极大地改变了Ta-Ga2O3薄膜的电学特性。在 0.05 摩尔%的极低掺杂率下，Ta-Ga2O3 薄膜的最小电阻率为 2.32 Ω-cm，载流子浓度为 2.48×1017 cm-3。薄膜中 Ta 元素的相应活化能为 16.8 meV，表明 Ta 元素是一种很有前途的浅供体掺杂剂。XPS 分析证实，在引入 Ta 离子后，Ga2O3 薄膜的费米级向导带最低点移动。这些结果表明，过渡金属元素 Ta 可以作为一种有效的 n 型掺杂剂来调节 β-Ga2O3 薄膜的载流子输运行为。本文受版权保护。
{"title":"Epitaxial tantalum‐doped β‐Ga2O3 thin films grown on MgO (001) substrate by pulsed laser deposition","authors":"Haobo Lin, Ningtao Liu, Wei Wang, Xiaoli Zhang, Dongyang Han, Wenrui Zhang, Jichun Ye","doi":"10.1002/pssr.202400023","DOIUrl":"https://doi.org/10.1002/pssr.202400023","url":null,"abstract":"Epitaxial thin films of tantalum‐doped β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> (Ta‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) were grown on MgO (001) substrates to study the effect of Ta doping on the electrical properties of β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films. X‐ray diffraction measurements show that the films with different Ta doping concentrations are (00<jats:italic>l</jats:italic>)‐oriented single‐crystalline β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> without impurity phases. The incorporation of the Ta element modifies the electrical properties of Ta‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films significantly. At a very low doping ratio of 0.05 mol%, the Ta‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film showed a minimum resistivity of 2.32 Ω·cm and a carrier concentration of 2.48×10<jats:sup>17</jats:sup> cm<jats:sup>‐3</jats:sup>. The corresponding activation energy of Ta element in the film was 16.8 meV, suggesting that the Ta element is a promising shallow donor dopant. The XPS analysis confirms that the Fermi level of the Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films shifts towards the conduction band minimum after the introduction of Ta ions. These results indicate that the transition metal element Ta could be an effective n‐type dopant for modulating the carrier transport behavior of β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140019557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pawel Adamiec, Jose Manuel Garcia Tijero, Ignacio Esquivias, Hans Wenzel, Bernd Sumpf
The relative intensity noise (RIN) in a two-section distributed Bragg reflector (DBR) tapered laser emitting around 1060 nm is being studied experimentally. By analyzing the RIN spectra, a resonance frequency and damping is obtained. Here, the dependence of the resonance frequency and the maximum RIN at the resonance frequency is studied as functions of the ridge waveguide (RW) and tapered section currents independently. The low frequency RIN is approximately -162 dB Hz-1, and the RIN peak at currents providing high output power is as low as -154 dB Hz-1. The observed nonlinearity of the squared resonance frequency with the RW section current is attributed to carrier saturation. The measured high values of the resonance frequency, exceeding 2.5 GHz for RW currents higher than 100 mA at a tapered current of 3 A, indicate gain lever enhancement.
实验研究了发射波长在 1060 nm 左右的双段分布式布拉格反射器（DBR）锥形激光器中的相对强度噪声（RIN）。通过分析 RIN 光谱，获得了共振频率和阻尼。在此，研究了共振频率和共振频率下最大 RIN 值与脊波导（RW）和锥形部分电流的函数关系。低频 RIN 约为 -162 dB Hz-1，在提供高输出功率的电流下，RIN 峰值低至 -154 dB Hz-1。观察到的共振频率平方与 RW 部分电流的非线性关系可归因于载波饱和。在 3 A 锥形电流下，当 RW 电流大于 100 mA 时，测得的谐振频率高值超过 2.5 GHz，这表明增益杠杆增强。
{"title":"Relative intensity noise in a two-section distributed Bragg reflector tapered laser","authors":"Pawel Adamiec, Jose Manuel Garcia Tijero, Ignacio Esquivias, Hans Wenzel, Bernd Sumpf","doi":"10.1002/pssr.202400018","DOIUrl":"https://doi.org/10.1002/pssr.202400018","url":null,"abstract":"The relative intensity noise (RIN) in a two-section distributed Bragg reflector (DBR) tapered laser emitting around 1060 nm is being studied experimentally. By analyzing the RIN spectra, a resonance frequency and damping is obtained. Here, the dependence of the resonance frequency and the maximum RIN at the resonance frequency is studied as functions of the ridge waveguide (RW) and tapered section currents independently. The low frequency RIN is approximately -162 dB Hz<sup>-1</sup>, and the RIN peak at currents providing high output power is as low as -154 dB Hz<sup>-1</sup>. The observed nonlinearity of the squared resonance frequency with the RW section current is attributed to carrier saturation. The measured high values of the resonance frequency, exceeding 2.5 GHz for RW currents higher than 100 mA at a tapered current of 3 A, indicate gain lever enhancement.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140005665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Microbolometers have emerged as a cost‐effective alternative to cooled infrared photon detectors, albeit with certain trade‐offs in terms of responsivity (), detectivity (), and response time (). The research in this field has been driven by the potential applications in night vision devices, military surveillance, and autonomous vehicles, leading to a growing interest in exploring new materials to bridge the performance gap between cooled photon detectors and uncooled bolometers. This study focuses on the optoelectronic and bolometric characteristics of nanocrystals (NCs) in a colloidal solution. These NCs exhibit a significant change in resistivity (ρ) when subjected to temperature variations ranging from 170K to 400K. Specifically, the Temperature Coefficient of Resistance (TCR), α, is 1.9% per Kelvin for a room temperature resistivity of 505 Ω cm. Furthermore, the responsivity of NCs is reported to be 0.101 A/W, and the Hall mobility of the colloidal solution is determined as . Finally, a comprehensive comparison is conducted between the performance metrics of established bolometer materials, such as VOx and a‐Si, and those of colloidal NCs. Based on the results, colloidal NCs are a promising option for future bolometer technology.This article is protected by copyright. All rights reserved.
{"title":"ADVANCEMENTS IN UNCOOLED BOLOMETER TECHNOLOGY: SHORT‐WAVE INFRARED DETECTION VIA CuFeSe2$left(text{CuFeSe}right)_{2}$ NANOCRYSTAL COLLOIDAL THIN‐FILMS","authors":"Ashutosh Vishwakarma, Chinmay Shailendra Gharpure, Anumol Sugathan, Anshu Pandey, Sushobhan Avasthi","doi":"10.1002/pssr.202300440","DOIUrl":"https://doi.org/10.1002/pssr.202300440","url":null,"abstract":"Microbolometers have emerged as a cost‐effective alternative to cooled infrared photon detectors, albeit with certain trade‐offs in terms of responsivity (), detectivity (), and response time (). The research in this field has been driven by the potential applications in night vision devices, military surveillance, and autonomous vehicles, leading to a growing interest in exploring new materials to bridge the performance gap between cooled photon detectors and uncooled bolometers. This study focuses on the optoelectronic and bolometric characteristics of nanocrystals (NCs) in a colloidal solution. These NCs exhibit a significant change in resistivity (<jats:italic>ρ</jats:italic>) when subjected to temperature variations ranging from 170K to 400K. Specifically, the Temperature Coefficient of Resistance (TCR), <jats:italic>α</jats:italic>, is 1.9% per Kelvin for a room temperature resistivity of 505 <jats:italic>Ω</jats:italic> cm. Furthermore, the responsivity of NCs is reported to be 0.101 A/W, and the Hall mobility of the colloidal solution is determined as . Finally, a comprehensive comparison is conducted between the performance metrics of established bolometer materials, such as VOx and a‐Si, and those of colloidal NCs. Based on the results, colloidal NCs are a promising option for future bolometer technology.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140005530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Micaela Pozzati, Felix Boll, Matteo Crisci, Sara Domenici, Bernd Smarsly, Teresa Gatti, Mengjiao Wang
MoS2 and WS2 have gathered significant attention due to their interesting and tunable properties and their wide range of applications. Liquid phase exfoliation (LPE) is a common and facile method to prepare 2D MoS2 and WS2. Currently, the principally employed solvents for LPE of MoS2 and WS2 are expensive, toxic and have high boiling points. These drawbacks encourage to find more sustainable alternatives to the liquid medium used for the preparation of 2D material inks. Water would be the best option, but surfactants are necessary for LPE in water, since MoS2 and WS2 are hydrophobic. Organic molecules with amphoteric character such as sodium dodecyl sulfate (SDS), sodium dodecylbenzene sulfonate (SDBS) and sodium hexyl sulfonate (SHS) are selected as suitable candidates for the role of surfactant. However, the study of these surfactants used in LPE is barely systematically reported. In this work, we present a detailed investigation on the impact of these surfactants on the LPE of MoS2 and WS2, which are representatives of TMDs. By characterizing and qualifying the products from average number of layers, we find that all the surfactants work efficiently to exfoliate MoS2 and WS2 into few layers, and SHS stabilizes the 2D layers better than the other two surfactants. However, in terms of yield and relative surfactant concentration, we don’t identify a real trade-off between maximized quantity of exfoliated materials and minimized surfactant concentration, which prompts to select the colloidal ink based on the specific further needs for processing.
{"title":"Systematic investigation on the surfactant-assisted liquid phase exfoliation of MoS2 and WS2 in water for sustainable 2D material inks","authors":"Micaela Pozzati, Felix Boll, Matteo Crisci, Sara Domenici, Bernd Smarsly, Teresa Gatti, Mengjiao Wang","doi":"10.1002/pssr.202400039","DOIUrl":"https://doi.org/10.1002/pssr.202400039","url":null,"abstract":"MoS<sub>2</sub> and WS<sub>2</sub> have gathered significant attention due to their interesting and tunable properties and their wide range of applications. Liquid phase exfoliation (LPE) is a common and facile method to prepare 2D MoS<sub>2</sub> and WS<sub>2</sub>. Currently, the principally employed solvents for LPE of MoS<sub>2</sub> and WS<sub>2</sub> are expensive, toxic and have high boiling points. These drawbacks encourage to find more sustainable alternatives to the liquid medium used for the preparation of 2D material inks. Water would be the best option, but surfactants are necessary for LPE in water, since MoS<sub>2</sub> and WS<sub>2</sub> are hydrophobic. Organic molecules with amphoteric character such as sodium dodecyl sulfate (SDS), sodium dodecylbenzene sulfonate (SDBS) and sodium hexyl sulfonate (SHS) are selected as suitable candidates for the role of surfactant. However, the study of these surfactants used in LPE is barely systematically reported. In this work, we present a detailed investigation on the impact of these surfactants on the LPE of MoS<sub>2</sub> and WS<sub>2</sub>, which are representatives of TMDs. By characterizing and qualifying the products from average number of layers, we find that all the surfactants work efficiently to exfoliate MoS<sub>2</sub> and WS<sub>2</sub> into few layers, and SHS stabilizes the 2D layers better than the other two surfactants. However, in terms of yield and relative surfactant concentration, we don’t identify a real trade-off between maximized quantity of exfoliated materials and minimized surfactant concentration, which prompts to select the colloidal ink based on the specific further needs for processing.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139969556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A critical element within the 3D Xpoint architecture is the Ovonic threshold switch (OTS) material, which serves a crucial role as a selector. The development of novel OTS materials devoid of hazardous elements such as As and Se is imperative for mitigating environmental impact. The Si‐Te binary telluride is a representative As/Se‐free OTS material, demonstrating stable switching. However, its thermal stability is insufficient for enduring annealing processes in semiconductor manufacturing. To address this challenge, this study proposes the incorporation of Mn into the Si‐Te alloy. While the introduction of transition metals into chalcogenide glass typically reduces the electrical resistivity, potentially compromising the ON/OFF ratio, the off current for the device containing 26 at.% Mn is observed to be lower than that for the undoped Si‐Te device. Furthermore, the thermal stability of the Mn‐Si‐Te film surpasses that of its pristine counterpart. X‐ray photoelectron spectroscopy and density functional theory simulations provide evidence of Mn‐Te bonding formation in the Mn‐Si‐Te amorphous alloy, thus suggesting the role of Mn‐Te bonding in enhancing thermal stability. These findings provide a promising avenue for the advancement of novel OTS materials.This article is protected by copyright. All rights reserved.
{"title":"Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding","authors":"Kentaro Saito, Shogo Hatayama, Yuta Saito","doi":"10.1002/pssr.202300474","DOIUrl":"https://doi.org/10.1002/pssr.202300474","url":null,"abstract":"A critical element within the 3D Xpoint architecture is the Ovonic threshold switch (OTS) material, which serves a crucial role as a selector. The development of novel OTS materials devoid of hazardous elements such as As and Se is imperative for mitigating environmental impact. The Si‐Te binary telluride is a representative As/Se‐free OTS material, demonstrating stable switching. However, its thermal stability is insufficient for enduring annealing processes in semiconductor manufacturing. To address this challenge, this study proposes the incorporation of Mn into the Si‐Te alloy. While the introduction of transition metals into chalcogenide glass typically reduces the electrical resistivity, potentially compromising the ON/OFF ratio, the off current for the device containing 26 at.% Mn is observed to be lower than that for the undoped Si‐Te device. Furthermore, the thermal stability of the Mn‐Si‐Te film surpasses that of its pristine counterpart. X‐ray photoelectron spectroscopy and density functional theory simulations provide evidence of Mn‐Te bonding formation in the Mn‐Si‐Te amorphous alloy, thus suggesting the role of Mn‐Te bonding in enhancing thermal stability. These findings provide a promising avenue for the advancement of novel OTS materials.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139954704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The optical properties of strongly doped semiconductor nanocrystals depend strongly on the carrier density of the nanocrystals. These characteristics can be exploited for the design of innovative optical devices based on ultrafast switching potentially in the THz modulation bandwidth. In this study, the optical response of one‐dimensional photonic crystals incorporating colloidal nanoparticles of a highly doped semiconductor such as indium tin oxide was investigated, taking into consideration the angular dependence of the photonic band gap and the position dependence of the photonic band gap on the light‐induced tunability of the indium tin oxide doping.This article is protected by copyright. All rights reserved.
{"title":"Colloidal doped semiconductor nanocrystals embedded in one‐dimensional photonic crystals for ultrafast photonics","authors":"Ilka Kriegel, Francesco Scotognella","doi":"10.1002/pssr.202300476","DOIUrl":"https://doi.org/10.1002/pssr.202300476","url":null,"abstract":"The optical properties of strongly doped semiconductor nanocrystals depend strongly on the carrier density of the nanocrystals. These characteristics can be exploited for the design of innovative optical devices based on ultrafast switching potentially in the THz modulation bandwidth. In this study, the optical response of one‐dimensional photonic crystals incorporating colloidal nanoparticles of a highly doped semiconductor such as indium tin oxide was investigated, taking into consideration the angular dependence of the photonic band gap and the position dependence of the photonic band gap on the light‐induced tunability of the indium tin oxide doping.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139954635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The conditions for the growth of polycrystalline GeSn films on SiO2/Si(001) substrates by HWCVD have been determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure and transport properties of films has been studied. GeSn films obtained at 300°C have a uniform surface with a roughness of less than 1.0 nm. It has been shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm2/V×s. despite the small grain size of 35 nm. Such films are of great interest for creating thin film transistors for active matrices liquid crystal displays.
{"title":"Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates","authors":"V.G. Shengurov, Yu.N. Buzynin, V. Yu. Chalkov, A.V. Nezhdanov, A.V. Kudrin, P.A. Yunin","doi":"10.1002/pssr.202300484","DOIUrl":"https://doi.org/10.1002/pssr.202300484","url":null,"abstract":"The conditions for the growth of polycrystalline GeSn films on SiO<sub>2</sub>/Si(001) substrates by HWCVD have been determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure and transport properties of films has been studied. GeSn films obtained at 300°C have a uniform surface with a roughness of less than 1.0 nm. It has been shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm<sup>2</sup>/V×s. despite the small grain size of 35 nm. Such films are of great interest for creating thin film transistors for active matrices liquid crystal displays.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139955209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cu2Se based binary compounds has recently fetched the attention of researchers due to their remarkable electrical and extremely low thermal properties. Besides, Cu2Se based quaternary chalcogenides were expected to present exceptional thermoelectric performance. Cu2Se1-x-ySxTey like compounds are synthesized via microwave assisted hydrothermal method and their respective thermal and electrical transport properties are studied in this research work. The phase purity and homogeneity were examined by X-Ray diffraction and EDS analysis. The introduction of S and Te elements into Cu2Se matrix enhance Seebeck coefficient resulting in improved electrical performance illustrating a maximum power factor of 989.4 μWK-2m-1 at 673 K. Furthermore, S, Te co-doped samples exhibit reduced total thermal conductivity values with lowest value of 0.808 WK-1m-1 for Cu2Se0.96S0.02Te0.02 sample in comparison to 1.18 WK-1m-1 for the pristine sample. The simultaneous improvement in electrical and thermal properties results in enhanced figure of merit of 0.82 for Cu2Se0.96S0.02Te0.02 sample at 673 K.
{"title":"Enhanced Thermoelectric Performance of Cu2Se Alloys by Simultaneous Engineering of Thermal and Electrical Transport Properties Through S and Te co-doping","authors":"Mahwish Khan, Hongchao Wang, Chunlei Wang","doi":"10.1002/pssr.202400016","DOIUrl":"https://doi.org/10.1002/pssr.202400016","url":null,"abstract":"Cu<sub>2</sub>Se based binary compounds has recently fetched the attention of researchers due to their remarkable electrical and extremely low thermal properties. Besides, Cu<sub>2</sub>Se based quaternary chalcogenides were expected to present exceptional thermoelectric performance. Cu<sub>2</sub>Se<sub>1-x-y</sub>S<sub>x</sub>Te<sub>y</sub> like compounds are synthesized via microwave assisted hydrothermal method and their respective thermal and electrical transport properties are studied in this research work. The phase purity and homogeneity were examined by X-Ray diffraction and EDS analysis. The introduction of S and Te elements into Cu<sub>2</sub>Se matrix enhance Seebeck coefficient resulting in improved electrical performance illustrating a maximum power factor of 989.4 <i>μ</i>WK<sup>-2</sup>m<sup>-1</sup> at 673 K. Furthermore, S, Te co-doped samples exhibit reduced total thermal conductivity values with lowest value of 0.808 WK<sup>-1</sup>m<sup>-1</sup> for Cu<sub>2</sub>Se<sub>0.96</sub>S<sub>0.02</sub>Te<sub>0.02</sub> sample in comparison to 1.18 WK<sup>-1</sup>m<sup>-1</sup> for the pristine sample. The simultaneous improvement in electrical and thermal properties results in enhanced figure of merit of 0.82 for Cu<sub>2</sub>Se<sub>0.96</sub>S<sub>0.02</sub>Te<sub>0.02</sub> sample at 673 K.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139956940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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