Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.135832
{"title":"Performance evaluation of UFMC-based VLC systems using a modified SLM technique","authors":"","doi":"10.24425/opelre.2021.135832","DOIUrl":"https://doi.org/10.24425/opelre.2021.135832","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"21 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74108889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.134459
A. Rogalski, M. Kopytko, P. Martyniuk
Article history: Received 05 May 2020 Received in revised form 16 Jun. 2020 Accepted 08 Jul. 2020 Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
{"title":"2D material infrared and terahertz detectors: status and outlook","authors":"A. Rogalski, M. Kopytko, P. Martyniuk","doi":"10.24425/opelre.2020.134459","DOIUrl":"https://doi.org/10.24425/opelre.2020.134459","url":null,"abstract":"Article history: Received 05 May 2020 Received in revised form 16 Jun. 2020 Accepted 08 Jul. 2020 Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"57 34","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72366782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.139756
A. Krzyzanowska, R. Szczygiel
Article history: Received 10 Sep. 2021 Received in revised form 30 Oct. 2021 Accepted 2 Nov. 2021 Available online 15 Dec. 2021 Hybrid pixel radiation detectors with a direct photon-to-charge conversion working in a single photon counting mode have gained increasing attention due to their high dynamic range and noiseless imaging. Since sensors of different materials can be attached to readout electronics, they enable work with a wide range of photon energies. The charge-sharing effect observed in segmented devices, such as hybrid pixel detectors, is a phenomenon that deteriorates both spatial resolution and detection efficiency. Algorithms that allow the detection of a photon irrespective of the charge-sharing effect are proposed to overcome these limitations. However, the spatial resolution of the detector can be further improved beyond the resolution determined by the pixel size if information about the charge proportions collected by neighbouring pixels is used to approximate the interaction position. In the article, an approach to achieve a subpixel resolution in a hybrid pixel detector working in the single photon counting mode is described. Requirements and limitations of digital inter-pixel algorithms which can be implemented on-chip are studied. In the simulations, the factors influencing the detector resolution are evaluated, including size of a charge cloud, number of virtual pixel subdivisions, and detector parameters.
{"title":"Simulation study on improving the spatial resolution of photon-counting hybrid pixel X-ray detectors","authors":"A. Krzyzanowska, R. Szczygiel","doi":"10.24425/opelre.2021.139756","DOIUrl":"https://doi.org/10.24425/opelre.2021.139756","url":null,"abstract":"Article history: Received 10 Sep. 2021 Received in revised form 30 Oct. 2021 Accepted 2 Nov. 2021 Available online 15 Dec. 2021 Hybrid pixel radiation detectors with a direct photon-to-charge conversion working in a single photon counting mode have gained increasing attention due to their high dynamic range and noiseless imaging. Since sensors of different materials can be attached to readout electronics, they enable work with a wide range of photon energies. The charge-sharing effect observed in segmented devices, such as hybrid pixel detectors, is a phenomenon that deteriorates both spatial resolution and detection efficiency. Algorithms that allow the detection of a photon irrespective of the charge-sharing effect are proposed to overcome these limitations. However, the spatial resolution of the detector can be further improved beyond the resolution determined by the pixel size if information about the charge proportions collected by neighbouring pixels is used to approximate the interaction position. In the article, an approach to achieve a subpixel resolution in a hybrid pixel detector working in the single photon counting mode is described. Requirements and limitations of digital inter-pixel algorithms which can be implemented on-chip are studied. In the simulations, the factors influencing the detector resolution are evaluated, including size of a charge cloud, number of virtual pixel subdivisions, and detector parameters.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"17 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90638295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.139755
{"title":"Symmetrical and asymmetrical imino-naphthalimides in perovskite solar cells","authors":"","doi":"10.24425/opelre.2021.139755","DOIUrl":"https://doi.org/10.24425/opelre.2021.139755","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"76 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89235476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.141542
{"title":"Design of external microtextures for efficient light outcoupling in OLEDs with different preferential orientation of emission dipoles","authors":"","doi":"10.24425/opelre.2022.141542","DOIUrl":"https://doi.org/10.24425/opelre.2022.141542","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"88 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80286391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/OPELRE.2020.133672
K. Kubiak
In the paper, an effective way to design asymmetrical optics for a uniform vertical surface illumination was presented. Assessment of the obtained distribution of luminance (illuminance) on the illuminated surface is done almost at the same time as designing the optical system elements. Advantage of the final application of the presented method in 3D will be independence from the implementation of time-consuming simulations in order to verify the already designed optics. Understanding the method and its application is simple and intuitive. Observing the luminance distribution, created on the illuminated surface almost at the same time as its design, allows to see the effect of adding the next elements of the optical system on this distribution.
{"title":"Designing the optical system with a real time lighting effect control","authors":"K. Kubiak","doi":"10.24425/OPELRE.2020.133672","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.133672","url":null,"abstract":"In the paper, an effective way to design asymmetrical optics for a uniform vertical surface illumination was presented. Assessment of the obtained distribution of luminance (illuminance) on the illuminated surface is done almost at the same time as designing the optical system elements. Advantage of the final application of the presented method in 3D will be independence from the implementation of time-consuming simulations in order to verify the already designed optics. Understanding the method and its application is simple and intuitive. Observing the luminance distribution, created on the illuminated surface almost at the same time as its design, allows to see the effect of adding the next elements of the optical system on this distribution.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"24 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83300176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.134427
J. Marczewski
Article history: Received 01 Jul. 2020 Received in revised form 06 Aug. 2020 Accepted 07 Aug. 2020 The paper presents a comprehensive look at the perspectives on the use of THz in digital communication systems. The publication aims to focus on arguments that justify a significant increase in the frequency of radio links and their integration with fibre-based networks. Comparison of THz links with their microwave and optical counterparts is discussed from basic physical limitations to technological constraints. Main attention is paid to the available channel capacity resulting from its bandwidth and signal-to-noise ratio. The short final discussion is about technology platforms that seem to be crucial to the availability of suitable THz sources. According to the author, the biggest advantage of using bands in the range of several hundred GHz for a digital data transmission is their use for mobile communication over short distances, as well as for broadband indoor links. However, these applications require a development of compact electronic THz sources with low noise and power reaching single watts. This is beyond the range of the most popular silicon-based technology platform, although a significant progress can be expected with the development of technologies based on wide bandgap semiconductors. Fibre optic connections remain the unquestioned leader in communication over long distances and permanent links.
{"title":"Digital communication – optical vs. THz links","authors":"J. Marczewski","doi":"10.24425/opelre.2020.134427","DOIUrl":"https://doi.org/10.24425/opelre.2020.134427","url":null,"abstract":"Article history: Received 01 Jul. 2020 Received in revised form 06 Aug. 2020 Accepted 07 Aug. 2020 The paper presents a comprehensive look at the perspectives on the use of THz in digital communication systems. The publication aims to focus on arguments that justify a significant increase in the frequency of radio links and their integration with fibre-based networks. Comparison of THz links with their microwave and optical counterparts is discussed from basic physical limitations to technological constraints. Main attention is paid to the available channel capacity resulting from its bandwidth and signal-to-noise ratio. The short final discussion is about technology platforms that seem to be crucial to the availability of suitable THz sources. According to the author, the biggest advantage of using bands in the range of several hundred GHz for a digital data transmission is their use for mobile communication over short distances, as well as for broadband indoor links. However, these applications require a development of compact electronic THz sources with low noise and power reaching single watts. This is beyond the range of the most popular silicon-based technology platform, although a significant progress can be expected with the development of technologies based on wide bandgap semiconductors. Fibre optic connections remain the unquestioned leader in communication over long distances and permanent links.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"101 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79376164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.139038
{"title":"Signal processing for time resolved photoluminescence spectroscopy","authors":"","doi":"10.24425/opelre.2021.139038","DOIUrl":"https://doi.org/10.24425/opelre.2021.139038","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"117 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79381443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/OPELRE.2020.134426
A. Khalaf, M. Gaballa
Article history: Received 16 Apr. 2020 Received in revised form 16 Jul. 2020 Accepted 17 Jul. 2020 The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for lighttrapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.
{"title":"Dual-band absorption of a GaAs thin-film solar cell using a bilayer nano-antenna structure","authors":"A. Khalaf, M. Gaballa","doi":"10.24425/OPELRE.2020.134426","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.134426","url":null,"abstract":"Article history: Received 16 Apr. 2020 Received in revised form 16 Jul. 2020 Accepted 17 Jul. 2020 The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for lighttrapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"16 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76577888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.141596
{"title":"The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics","authors":"","doi":"10.24425/opelre.2022.141596","DOIUrl":"https://doi.org/10.24425/opelre.2022.141596","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"48 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73105298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：