Pub Date : 2023-04-01DOI: 10.24425/OPELRE.2020.134426
A. Khalaf, M. Gaballa
Article history: Received 16 Apr. 2020 Received in revised form 16 Jul. 2020 Accepted 17 Jul. 2020 The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for lighttrapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.
{"title":"Dual-band absorption of a GaAs thin-film solar cell using a bilayer nano-antenna structure","authors":"A. Khalaf, M. Gaballa","doi":"10.24425/OPELRE.2020.134426","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.134426","url":null,"abstract":"Article history: Received 16 Apr. 2020 Received in revised form 16 Jul. 2020 Accepted 17 Jul. 2020 The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for lighttrapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"16 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76577888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.139754
K. Bogdanowicz, A. Iwan
The present review is mainly focused on the extended analysis of the results obtained from coupled measurement techniques of a thermal imaging camera and chronoamperometry for imines in undoped and doped states. This coupled technique allows to identify the current-voltage characteristics of thin films based on imine, as well as to assess layer defects in thermal images. Additional analysis of results provides further information regarding sample parameters, such as resistance, conductivity, thermal resistance, and Joule power heat correlated with increasing temperature. As can be concluded from this review, it is possible not only to study material properties at the supramolecular level, but also to tune macroscopic properties of -conjugated systems. A detailed study of the structure-thermoelectrical properties in a series of eight unsymmetrical and symmetrical imines for the field of optoelectronics and photovoltaics has been undertaken. Apart from this molecular engineering, the imines properties were also tuned by supramolecular engineering via protonation with camphorsulfonic acid and by creation of bulk-heterojunction compositions based on poly(4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl) and/or [6,6]-phenyl-C71-butyric acid methyl ester, poly(3,4-ethylenedioxythiophene) towards the analysed donor or acceptor ability of imines in the active layer. The use of coupled measurement techniques of a thermal imaging camera and chronoamperometry allows obtaining comprehensive data on thermoelectric properties and defects indicating possible molecule rearrangement within the layer.
{"title":"Review on thermoelectrical properties of selected imines in neat and multicomponent layers towards organic opto-electronics and photovoltaics","authors":"K. Bogdanowicz, A. Iwan","doi":"10.24425/opelre.2021.139754","DOIUrl":"https://doi.org/10.24425/opelre.2021.139754","url":null,"abstract":"The present review is mainly focused on the extended analysis of the results obtained from coupled measurement techniques of a thermal imaging camera and chronoamperometry for imines in undoped and doped states. This coupled technique allows to identify the current-voltage characteristics of thin films based on imine, as well as to assess layer defects in thermal images. Additional analysis of results provides further information regarding sample parameters, such as resistance, conductivity, thermal resistance, and Joule power heat correlated with increasing temperature. As can be concluded from this review, it is possible not only to study material properties at the supramolecular level, but also to tune macroscopic properties of -conjugated systems. A detailed study of the structure-thermoelectrical properties in a series of eight unsymmetrical and symmetrical imines for the field of optoelectronics and photovoltaics has been undertaken. Apart from this molecular engineering, the imines properties were also tuned by supramolecular engineering via protonation with camphorsulfonic acid and by creation of bulk-heterojunction compositions based on poly(4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl) and/or [6,6]-phenyl-C71-butyric acid methyl ester, poly(3,4-ethylenedioxythiophene) towards the analysed donor or acceptor ability of imines in the active layer. The use of coupled measurement techniques of a thermal imaging camera and chronoamperometry allows obtaining comprehensive data on thermoelectric properties and defects indicating possible molecule rearrangement within the layer.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"60 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75652346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.132498
{"title":"A flexible approach to combating chromatic dispersion in a centralized 5G network","authors":"","doi":"10.24425/opelre.2020.132498","DOIUrl":"https://doi.org/10.24425/opelre.2020.132498","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"46 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81007700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/OPELRE.2020.136111
N. Przybysz, P. Marć, E. Tomaszewska, J. Grobelny, L. Jaroszewicz
1. Opracowanie rekordu ze środkow MNiSW, umowa Nr 461252 w ramach programu "Spoleczna odpowiedzialnośc nauki" - modul: Popularyzacja nauki i promocja sportu (2021). 2. This work was financially supported by the Ministry of Science and Higher Education as a statutory activity of Technical Physics Applications Department of the Military University of Technology.
1. Opracowanie rekordu ze środkow MNiSW, ummowa Nr 461252 w ramach计划“Spoleczna odpowiedzialnośc nauki”-模块:Popularyzacja nauki i promocja sportu(2021)。2. 本研究作为军事工业大学技术物理应用系的一项法定活动，得到了国家科学和高等教育部的财政支持。
{"title":"Mixtures of selected n-alkanes and Au nanoparticels for optical fiber threshold temperature transducers","authors":"N. Przybysz, P. Marć, E. Tomaszewska, J. Grobelny, L. Jaroszewicz","doi":"10.24425/OPELRE.2020.136111","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.136111","url":null,"abstract":"1. Opracowanie rekordu ze środkow MNiSW, umowa Nr 461252 w ramach programu \"Spoleczna odpowiedzialnośc nauki\" - modul: Popularyzacja nauki i promocja sportu (2021). 2. This work was financially supported by the Ministry of Science and Higher Education as a statutory activity of Technical Physics Applications Department of the Military University of Technology.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"26 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83770335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.140557
{"title":"A simulation study of temperature effects on performance parameters of silicon heterojunction solar cells with different ITO/a-Si:H selective contacts","authors":"","doi":"10.24425/opelre.2022.140557","DOIUrl":"https://doi.org/10.24425/opelre.2022.140557","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"12 3 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79890448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.141707
{"title":"Electronic structure, stability, and strength of Cu–NiAl alloys: Experiment and DFT investigation","authors":"","doi":"10.24425/opelre.2022.141707","DOIUrl":"https://doi.org/10.24425/opelre.2022.141707","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"155 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78136786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.134460
M. Sypniewska, R. Szczęsny, P. Popielarski, K. Strzałkowski, B. Derkowska-Zielinska
Article history: Received 02 Jun. 2020 Received in revised form 27 Aug. 2020 Accepted 31 Aug. 2020 ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
{"title":"Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method","authors":"M. Sypniewska, R. Szczęsny, P. Popielarski, K. Strzałkowski, B. Derkowska-Zielinska","doi":"10.24425/opelre.2020.134460","DOIUrl":"https://doi.org/10.24425/opelre.2020.134460","url":null,"abstract":"Article history: Received 02 Jun. 2020 Received in revised form 27 Aug. 2020 Accepted 31 Aug. 2020 ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"11 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81723541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.141126
K. Achtenberg, J. Mikołajczyk, Z. Bielecki
The paper presents noise measurements in low-resistance photodetectors using a cross-correlation-based transimpedance amplifier. Such measurements usually apply a transimpedance amplifier design to provide a current fluctuation amplification. In the case of low-resistance sources, the measurement system causes additional relevant system noise which can be higher than noise generated in a tested detector. It mainly comes from the equivalent input voltage noise of the transimpedance amplifier. In this work, the unique circuit and a three-step procedure were used to reduce the floor noise, covering the measured infrared detector noise, mainly when operating with no-bias or low-bias voltage. The modified circuit and procedure to measure the noise of unbiased and biased detectors characterized by resistances much lower than 100 Ω were presented. Under low biases, the reference low-resistance resistors tested the measurement system operation and techniques. After the system verification, noise characteristics in low-resistance InAs and InAsSb infrared detectors were also measured.
{"title":"Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements","authors":"K. Achtenberg, J. Mikołajczyk, Z. Bielecki","doi":"10.24425/opelre.2022.141126","DOIUrl":"https://doi.org/10.24425/opelre.2022.141126","url":null,"abstract":"The paper presents noise measurements in low-resistance photodetectors using a cross-correlation-based transimpedance amplifier. Such measurements usually apply a transimpedance amplifier design to provide a current fluctuation amplification. In the case of low-resistance sources, the measurement system causes additional relevant system noise which can be higher than noise generated in a tested detector. It mainly comes from the equivalent input voltage noise of the transimpedance amplifier. In this work, the unique circuit and a three-step procedure were used to reduce the floor noise, covering the measured infrared detector noise, mainly when operating with no-bias or low-bias voltage. The modified circuit and procedure to measure the noise of unbiased and biased detectors characterized by resistances much lower than 100 Ω were presented. Under low biases, the reference low-resistance resistors tested the measurement system operation and techniques. After the system verification, noise characteristics in low-resistance InAs and InAsSb infrared detectors were also measured.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"29 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89254306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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