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A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications 基于 0.75V 10 纳米鳍式场效应晶体管的混合型自控预充电内容可寻址存储器,适用于低待机功耗应用
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-14 DOI: 10.1080/00207217.2024.2312558
Arulpriya Shanmugam, Kumar Ponnusamy
The switching speed and driving capability have been enhanced by scaling the transistor size to nanoscale. The limitations in using MOSFET are that the short channel effects such as leakage current...
通过将晶体管尺寸缩小到纳米级,开关速度和驱动能力都得到了提高。使用 MOSFET 的局限性在于短沟道效应,如漏电电流...
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引用次数: 0
Analysis of STC-GFDM with Walsh Hadamard in generalized η−μ fading channel 广义η-μ衰减信道中使用沃尔什哈达玛的 STC-GFDM 分析
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-12 DOI: 10.1080/00207217.2024.2312566
Surbhi Kalsotra, Hem Dutt Joshi, Ashutosh Kumar Singh
This manuscript presents a comprehensive analytical framework for Walsh-Hadamard Transform (WHT) precoding in Space-Time Coded Generalized Frequency Division Multiplexing (STC-GFDM) systems. The in...
本手稿介绍了时空编码广义频分复用(STC-GFDM)系统中沃尔什-哈达玛德变换(WHT)预编码的综合分析框架。该框架中的...
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引用次数: 0
Design and optimization of broadband CPW rectenna for RF energy harvesting 射频能量采集用宽带 CPW 整流器天线的设计与优化
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-12 DOI: 10.1080/00207217.2024.2312570
Priya Sharma, Ashutosh Kumar Singh, B. Naresh, Ramesh Kumar Verma, Vinod Kumar Singh, Mohit Kumar Pandey
Wireless sensor networks (WSNs) are widely used in a variety of sectors, including the surveillance, healthcare, and military, and so on. The high cost and short lifespan of wireless sensor network...
无线传感器网络(WSN)被广泛应用于监控、医疗保健和军事等多个领域。由于无线传感器网络成本高、寿命短...
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引用次数: 0
An approach for designing leakage compensated voltage reference circuit 设计漏电补偿电压基准电路的方法
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-06 DOI: 10.1080/00207217.2024.2312564
Anushree, Kanhaiya Lal Pushkar, Jasdeep Kaur
In this paper, the design of CMOS-based and recyclic folded cascode (RFC)-based voltage reference circuits is presented. Further inherent leakage compensation technique using diode connected MOSFET...
本文介绍了基于 CMOS 和循环折叠级联(RFC)的电压基准电路的设计。此外,还介绍了使用二极管连接 MOSFET 的固有漏电补偿技术。
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引用次数: 0
Data transmission via hybrid fuzzy time slot scheduling in long-range communication 远距离通信中通过混合模糊时隙调度进行数据传输
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312567
E. Saritha, U. Sajesh Kumar
Several communication protocols have been tuned for LoRaWAN since the development of LoRa technology more than 10 years ago. LPWAN technology can address issues like overlooked delivery ratio, redu...
自十多年前开发出 LoRa 技术以来,已针对 LoRaWAN 调整了几种通信协议。LPWAN 技术可以解决被忽视的传输速率、减少传输时间、提高传输效率等问题。
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引用次数: 0
A 28 GHz transformer-based Doherty power amplifier for FR2 5G applications in 40 nm CMOS 采用 40 纳米 CMOS、基于变压器的 28 GHz Doherty 功率放大器,适用于 FR2 5G 应用
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312557
Linhong Li, Zhaofeng Zhang
In this paper, a 28 GHz transformer-based Doherty power amplifier (DPA) is designed in Huali Microelectronics (HLMC) 40 nm CMOS process. The impedance inverter is converted into transformer form to...
本文采用华力微电子 (HLMC) 40 纳米 CMOS 工艺设计了基于变压器的 28 GHz Doherty 功率放大器 (DPA)。阻抗反相器被转换成变压器形式,以...
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引用次数: 0
Super-twisting hysteresis controller for multi-rotor wind energy systems 用于多旋翼风能系统的超扭曲滞后控制器
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312086
Habib Benbouhenni, Nicu Bizon, Ilhami Colak
In this study, the hysteresis controller (HCs) of the direct power control (DPC) is proposed based on super-twisting HCs (STHCs). The effectiveness of the proposed STHCs is analysed and compared wi...
本研究提出了基于超扭曲磁滞控制器(STHC)的直接功率控制(DPC)磁滞控制器(HCs)。研究分析了所提出的 STHC 的有效性,并将其与 DPC 的滞后控制器进行了比较。
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引用次数: 0
Impact of process parameters variation on noise and linearity performances of GC-JL-GAA MOSFET 工艺参数变化对 GC-JL-GAA MOSFET 噪声和线性性能的影响
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312560
Vidyadhar Gupta, Amit Kumar Pandey, Abhinav Gupta, Vedvrat, Tarun Kumar Gupta
The short channel effects are improved in GC-JL-GAA MOSFETs by raising the channel’s graded doping level. The noise and linearity of the device plays a crucial role in RFIC circuit applications. Th...
通过提高沟道的分级掺杂水平,GC-JL-GAA MOSFET 的短沟道效应得到了改善。器件的噪声和线性度在射频集成电路应用中起着至关重要的作用。这...
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引用次数: 0
High gain interleaved DC-DC converter with ripple-free input current and low device stress 无纹波输入电流和低器件应力的高增益交错直流-直流转换器
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312569
A.S. Valarmathy, Prabhakar Mahalingam
A non-isolated DC-DC converter which yields high voltage gain and suitable for photovoltaic (PV) applications is described in this research article. The high gain converter proposed in this paper i...
本文介绍了一种可产生高电压增益并适用于光伏(PV)应用的非隔离式直流-直流转换器。本文中提出的高增益转换器是一种非隔离式直流-直流转换器。
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引用次数: 0
An energy-efficient design of ternary SRAM using GNRFETs 使用 GNRFET 的三元 SRAM 节能设计
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312563
Maedeh Orouji, Erfan Abbasian, Morteza Gholipour
The primary requirement of internet-of-things (IoT) applications is to have an energy-efficient design that extends the battery life for long-term operation. To achieve energy efficiency, one can e...
物联网(IoT)应用的主要要求是采用高能效设计,延长电池寿命,实现长期运行。要实现高能效,可以通过以下方法:...
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引用次数: 0
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International Journal of Electronics
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