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A compact star-shaped leaky-wave antenna for half-space steering 紧凑的星形漏波天线,用于半空间转向
4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-10-05 DOI: 10.1080/00207217.2023.2267220
Seyed Jalil Hosseini, Mohammad Khalaj-Amirhosseini
ABSTRACTIn this paper, a compact leaky-wave planer antenna is proposed. The proposed antenna fabricated by the printed circuit broad technology can scan a large part of its upper half-space. The proposed antenna consists of a metallic six-pointed star on a regular hexagon. The back of the hexagon is wholly covered with a conductor. The structure’s detailed design and analysis have been done using the dispersion diagram. In the proposed antenna, changing the frequency can steer the main beam in elevation at six-step angles of azimuth. The simulation and measurement results confirm the theory well. The leaky wave structure is an attractive and economical method to scan half-space.KEYWORDS: Beam scanning antennafrequency steering antennahalf-space scanningleaky-wave antennaplanar antennaDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also. AcknowledgementsThe authors thank the Editor-in-Chief, the Associate Editor, and the reviewers for their constructive comments that are important for improving this study.Declaration of Interest statementThere are no relevant financial or non-financial competing interests to report.
摘要提出了一种紧凑的漏波平面天线。采用印刷电路宽技术制作的天线可以对其上半空间的大部分区域进行扫描。该天线由正六边形上的金属六角星组成。六边形的背面完全被导体覆盖。利用色散图对结构进行了详细的设计和分析。在所提出的天线中,改变频率可以使主波束在仰角上以六阶方位角方向移动。仿真和实测结果验证了理论的正确性。漏波结构是一种有吸引力且经济的半空间扫描方法。关键词:波束扫描天线;频率转向天线;半空间扫描;漏波天线;平面天线;在最终出版版本记录(VoR)之前,将对该手稿进行编辑、排版和审查。在制作和印前,可能会发现可能影响内容的错误,所有适用于期刊的法律免责声明也与这些版本有关。作者感谢主编、副主编和审稿人的建设性意见,这些意见对改进本研究非常重要。利益声明没有相关的财务或非财务上的竞争利益需要报告。
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引用次数: 0
Generalized strategy for stabilizing minimax-type variable bandpass filter 稳定极小极大型可变带通滤波器的广义策略
4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-10-04 DOI: 10.1080/00207217.2023.2267215
Tian-Bo Deng
ABSTRACTThis paper first develops a novel transformation-based strategy for guaranteeing the stability of recursive-type variable digital filters, and then presents a new type of functions called less-than-unity (LTU) functions required in performing stability-guaranteed parameter transformations (LTU transformations). The LTU transformations can be viewed as the generalised existing one. Based on the LTU transformations, a recursive bandpass filter with variable passband-width (PBW) is attained using the minimax criterion so that the stability is ensured. The recursive bandpass filter has continuously PBW and fixed passband centre frequency. To meet the stability condition of the recursive variable PBW bandpass filter (variable-PBW filter), the LTU parameter transformations are incorporated into the minimisation of the maximum amplitude-response error. It can be proved that incorporating the LTU transformations into the design process definitely produces a recursive variable-PBW filter whose stability is absolutely guaranteed. For verifying the ensured stability and demonstrating the high design accuracy, detailed computer simulations are included. The illustrative example verifies that the obtained variable-PBW filter not only has definitely ensured stability, but also its approximation accuracy is extremely high.KEYWORDS: Variable passband-width (PBW)stability guaranteeLess-than-unity (LTU) transformationLTU functionDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.
摘要本文首先提出了一种新的基于变换的保证递归型变量数字滤波器稳定性的策略,然后提出了进行稳定保证参数变换(LTU变换)所需的一类新的函数——小于单位(LTU)函数。LTU转换可以看作是现有转换的一般化。在LTU变换的基础上,采用极大极小准则得到变通带宽递归滤波器,保证了滤波器的稳定性。递归带通滤波器具有连续的PBW和固定的通带中心频率。为了满足递归可变PBW带通滤波器(variable-PBW filter)的稳定性条件,将LTU参数变换纳入最大幅值响应误差的最小化中。结果表明,在设计过程中引入LTU变换,得到的递归变量pbw滤波器的稳定性得到绝对保证。为了验证所保证的稳定性和展示高设计精度,包括详细的计算机仿真。算例验证了所得到的变pbw滤波器不仅保证了稳定性,而且逼近精度极高。关键词:可变通带宽度(PBW)稳定性保证非统一(LTU)转换LTU函数免责声明作为对作者和研究人员的服务,我们提供此版本的接受稿件(AM)。在最终出版版本记录(VoR)之前,将对该手稿进行编辑、排版和审查。在制作和印前,可能会发现可能影响内容的错误,所有适用于期刊的法律免责声明也与这些版本有关。
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引用次数: 0
Design a Wilkinson power divider with improved passband and rejection band 设计一个具有改进通带和抑制带的威尔金森功率分配器
4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-10-04 DOI: 10.1080/00207217.2023.2267213
Kadhim Jawad Abdulkarim Al-Khafaji, Hamed Abbasi
ABSTRACTIn this paper, a Wilkinson power divider based on a new harmonic suppressor structure is proposed with suppressed harmonics and improved operating band parameters. The proposed suppressor structure consists of three resonators. The first resonator is an elliptic rectangular shaped resonator with a short base line and two slots. These slots decrease the resonant frequency location, without changing the dimensions of the resonator. This mode has been fully analysed by investigating the effect of surface current density. The second resonator is an elliptic resonator with a long base length to suppress the second harmonic. The third resonator is a rectangular suppressor to suppress higher order harmonics. The proposed power divider is fabricated and measured. The operating frequency of this power divider is 1.26 GHz, the return loss is 31.5 dB and the insertion loss is 3.1 dB. The operating bandwidth is from 0.99 to 1.4 GHz with a return loss better than 15 dB which shows the fractional bandwidth of FBW = 34%. The second to sixth harmonics have suppression level better than 50 dB, and for higher harmonics up to the 14th harmonic, they have suppression level better than 25 dB.KEYWORDS: Improved passband parametersHigh suppression levelWilkinson Power DividerWide rejection bandharmonic suppressionDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.
摘要本文提出了一种基于谐波抑制器结构的威尔金森功率分配器,该结构具有谐波抑制和改进的工作频带参数。所提出的抑制结构由三个谐振腔组成。第一谐振器为椭圆矩形谐振器,具有短基线和两个槽。这些槽减少了谐振频率的位置,而不改变谐振器的尺寸。通过研究表面电流密度的影响,对这种模式进行了充分的分析。第二谐振器是具有长基长以抑制第二谐波的椭圆谐振器。第三个谐振器是一个矩形抑制器,用于抑制高次谐波。制作并测量了所提出的功率分配器。该功率分配器的工作频率为1.26 GHz,回波损耗为31.5 dB,插入损耗为3.1 dB。工作带宽为0.99 ~ 1.4 GHz,回波损耗优于15 dB,表明FBW的分数带宽= 34%。2 ~ 6次谐波的抑制水平优于50 dB,高次谐波至14次谐波的抑制水平优于25 dB。关键词:改进的通带参数高抑制电平威尔金森功率分压器宽抑制带谐波抑制免责声明作为对作者和研究人员的服务,我们提供此版本的已接受手稿(AM)。在最终出版版本记录(VoR)之前,将对该手稿进行编辑、排版和审查。在制作和印前,可能会发现可能影响内容的错误,所有适用于期刊的法律免责声明也与这些版本有关。
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引用次数: 0
Programmable PVT compensated dual output resistance tunable current controlled conveyor 可编程PVT补偿双输出电阻可调电流控制输送机
4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-10-04 DOI: 10.1080/00207217.2023.2267209
Aruna Pathak, Manoj Kumar Tiwari, Neeta Pandey, Sajal K Paul, Saiyid Mohammad Irshad Rizvi
ABSTRACTIn the existing dual output resistance tunable current controlled conveyor (DO-RTCCCII), a resistance trimming block is added at the X terminal (RXdig) which is controlled by programmable bits. RXdig includes the variations due to bias current (i.e. intrinsic resistance, RX) and due to setting of digital bits. However, the PVT variations may cause deviations in bias current, thus leading to inaccuracies in the design parameters. To address this, a programmable PVT compensated DO-RTCCCII (PPC-DO-RTCCCII) is proposed. It uses a reference generation section along with DO-RTCCCII. The reference generation section uses bias compensation bits for PVT independent bias current generation and also provides flexibility to get desired bias current through current multiplication bits. The operation of the proposed PPC-DO-RTCCCII has been designed and simulated using 28 nm CMOS technology through the simulator ELDO (AMS) tool of Mentor graphics. The post layout simulations closely match with pre layout simulations. A filter circuit is also included to illustrate the usefulness of the proposal.KEYWORDS: Analoguecurrent controlled current conveyorPVTElectronic tunabilityDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.
在现有的双输出电阻可调电流控制输送机(DO-RTCCCII)中,在X端(RXdig)增加了一个电阻修整块,由可编程位控制。RXdig包括由于偏置电流(即固有电阻,RX)和由于数字位设置而产生的变化。然而,PVT的变化可能导致偏置电流的偏差,从而导致设计参数的不准确性。为了解决这个问题,提出了一种可编程PVT补偿DO-RTCCCII (PPC-DO-RTCCCII)。它使用DO-RTCCCII的引用生成部分。参考生成部分使用偏置补偿位进行与PVT无关的偏置电流生成,并且还提供了通过电流乘法位获得所需偏置电流的灵活性。利用Mentor graphics的ELDO (AMS)模拟器工具,设计并模拟了PPC-DO-RTCCCII的28 nm CMOS技术。布局后的模拟与布局前的模拟非常接近。还包括一个滤波电路,以说明该建议的有效性。关键词:模拟电流控制电流输送机pvt电子可调性免责声明作为对作者和研究人员的服务,我们提供此版本的接受手稿(AM)。在最终出版版本记录(VoR)之前,将对该手稿进行编辑、排版和审查。在制作和印前,可能会发现可能影响内容的错误,所有适用于期刊的法律免责声明也与这些版本有关。
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引用次数: 0
Design of high efficient low power static logic circuit using SG fin FET 利用SG翅片FET设计高效低功耗静态逻辑电路
4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-21 DOI: 10.1080/00207217.2023.2261081
Venkatesan RameyaSridharan, Manjunathan Alagarsamy, Balamurugan Rajangam, Lalitha Sekar
ABSTRACTThe increasing demand of integration density improvement and battery-powered device efficiency reduced complementary metal-oxide semiconductor ;(CMOS) technology node. In the technology of CMOS, the components are mainly affected with leakage power, dynamic switching power, short circuit power, Gate Oxide Tunneling Leakage Current, Sub threshold Leakage Current, and so on. To reduce the above limitations, design of high efficient low power static logic circuit using shorted-gate (SG) fin field-effect transistor (FinFET) based INput DEPendent (INDEP) in 22 nm CMOS Technology(SLC-SG-FinFET- INDEP-22 nm CMOS) approach is proposed in this manuscript. The better selection of inputs to proposed INDEP FinFETs model is used for reducing leakage power. The efficiency of the proposed SLC-SG-FinFET- INDEP-22 nm CMOS technique is analysed using delay, power, power delay product, and stability analysis using Noise Margin. Thus, the proposed SLC-SG-FinFET-INDEP-22 nm CMOS has attained 21.31%, 41.47% and 12.7% lower delay, 20.87%, 34.5% and 22.41% lower power and 4.5%, 25.7% and 32.11% higher speed than existing methods static logic circuit input-controlled leakage restrainer transistor in 22 nm CMOS (SLC-ICLRT-22 nm CMOS), static logic circuit using self-control leakage-suppression block in 22 nm CMOS Technology (SLC-SCLSB-22 nm CMOS),and static logic circuit using computational digital low dropout in 22 nm CMOS Technology(SLC-CDLDO-22 nm CMOS) methods respectively.KEYWORDS: Complementary metal-oxide semiconductor (CMOS)leakage power dissipation22nm CMOS technologystatic logic gatesInput dependent (INDEP) FinFETDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.
摘要集成密度的提高和电池供电器件效率的提高降低了互补金属氧化物半导体(CMOS)技术的节点。在CMOS技术中,对元件的影响主要有漏功率、动态开关功率、短路功率、栅氧化物隧道漏电流、亚阈值漏电流等。为了减少上述限制,本文提出了采用基于输入依赖(INDEP)的22 nm CMOS技术(SLC-SG-FinFET- INDEP-22 nm CMOS)的短栅(SG)鳍场效应晶体管(FinFET)设计高效低功耗静态逻辑电路。提出的INDEP finfet模型采用更好的输入选择来降低泄漏功率。采用延迟、功率、功率延迟积分析了SLC-SG-FinFET- indep - 22nm CMOS技术的效率,并采用噪声裕度分析了稳定性。因此,与现有的22 nm CMOS (SLC-ICLRT-22 nm CMOS)静态逻辑电路输入控制的泄漏抑制晶体管相比,所提出的SLC-SG-FinFET-INDEP-22 nm CMOS延迟降低21.31%、41.47%和12.7%,功耗降低20.87%、34.5%和22.41%,速度提高4.5%、25.7%和32.11%。采用自控制漏抑制块的22 nm CMOS静态逻辑电路(SLC-SCLSB-22 nm CMOS)和采用计算数字低差的22 nm CMOS静态逻辑电路(SLC-CDLDO-22 nm CMOS)方法。关键词:互补金属氧化物半导体(CMOS)漏功耗22nm CMOS技术静态逻辑门输入依赖(INDEP) finfetet免责声明作为对作者和研究人员的服务,我们提供此版本的接受稿件(AM)。在最终出版版本记录(VoR)之前,将对该手稿进行编辑、排版和审查。在制作和印前,可能会发现可能影响内容的错误,所有适用于期刊的法律免责声明也与这些版本有关。
{"title":"Design of high efficient low power static logic circuit using SG fin FET","authors":"Venkatesan RameyaSridharan, Manjunathan Alagarsamy, Balamurugan Rajangam, Lalitha Sekar","doi":"10.1080/00207217.2023.2261081","DOIUrl":"https://doi.org/10.1080/00207217.2023.2261081","url":null,"abstract":"ABSTRACTThe increasing demand of integration density improvement and battery-powered device efficiency reduced complementary metal-oxide semiconductor ;(CMOS) technology node. In the technology of CMOS, the components are mainly affected with leakage power, dynamic switching power, short circuit power, Gate Oxide Tunneling Leakage Current, Sub threshold Leakage Current, and so on. To reduce the above limitations, design of high efficient low power static logic circuit using shorted-gate (SG) fin field-effect transistor (FinFET) based INput DEPendent (INDEP) in 22 nm CMOS Technology(SLC-SG-FinFET- INDEP-22 nm CMOS) approach is proposed in this manuscript. The better selection of inputs to proposed INDEP FinFETs model is used for reducing leakage power. The efficiency of the proposed SLC-SG-FinFET- INDEP-22 nm CMOS technique is analysed using delay, power, power delay product, and stability analysis using Noise Margin. Thus, the proposed SLC-SG-FinFET-INDEP-22 nm CMOS has attained 21.31%, 41.47% and 12.7% lower delay, 20.87%, 34.5% and 22.41% lower power and 4.5%, 25.7% and 32.11% higher speed than existing methods static logic circuit input-controlled leakage restrainer transistor in 22 nm CMOS (SLC-ICLRT-22 nm CMOS), static logic circuit using self-control leakage-suppression block in 22 nm CMOS Technology (SLC-SCLSB-22 nm CMOS),and static logic circuit using computational digital low dropout in 22 nm CMOS Technology(SLC-CDLDO-22 nm CMOS) methods respectively.KEYWORDS: Complementary metal-oxide semiconductor (CMOS)leakage power dissipation22nm CMOS technologystatic logic gatesInput dependent (INDEP) FinFETDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136154829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A QCA placement and routing algorithm based on the SA algorithm 一种基于SA算法的QCA放置和路由算法
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-04 DOI: 10.1080/00207217.2023.2248666
Gaisheng Li, Fei Peng, Bing Zhang, Yanshuai Li, Guangjun Xie
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引用次数: 0
A hybrid approach for enhancing the dynamic stability in power system 一种提高电力系统动态稳定性的混合方法
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-01 DOI: 10.1080/00207217.2023.2245195
P. Balakrishnan, S. Gopinath
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引用次数: 0
Design of a Novel Four-element Koch-Sierpinski fractal mmwave antenna for 5G applications 5G应用新型四元Koch-Sierpinski分形毫米波天线设计
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-08-29 DOI: 10.1080/00207217.2023.2248662
Jagadeesh Babu Kamili, Tathababu Addepalli, Bhaskara Rao Perli, K. Bandi, Y. T. Mohammed
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引用次数: 0
A High Boost Switched capacitor multilevel inverter with Reduced Components 高升压开关电容多电平逆变器与减少元件
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-08-22 DOI: 10.1080/00207217.2023.2248664
T. Roy, Sitakant Debata, P. Sadhu
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引用次数: 0
A Novel Cascaded Multilevel Boost converter fed Multilevel inverter with reduced switch count 一种新型的级联多电平升压变换器馈入多电平逆变器,减少开关计数
IF 1.3 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-08-22 DOI: 10.1080/00207217.2023.2248665
K. Jayasudha, S. Vijayalakshmi, M. Marimuthu
ABSTRACT Novel cascaded multilevel converters fed multilevel inverter for the AC load is presented here. In an inverter, total harmonic distortion plays a vital role. With the aim of reducing the harmonic value, the number of levels of an inverter should be increased. This circuit consists of two multilevel converters, two level controllers and two H-Bridge inverters. The advantage of this topology is to obtain more number of levels in an output, fewer significant number of switches, voltage sources and passive components like capacitors and diodes. This circuit could be operated in two ways as symmetric, & asymmetric configurations. As a result of this topology, 19-level output can be obtained. The performance of this circuit is simulated by means of MATLAB, and the hardware result is proved with the simulation results.
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引用次数: 0
期刊
International Journal of Electronics
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