Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259553
H. Sarbishaei, D. Y. Wu, S. Boumaiza
In this paper, the nonlinearity generation mechanisms causing AM/AM and AM/PM in GaN power amplifier are analyzed from a circuit perspective. The nonlinear device transconductance is found to be the primary source of slow compression in GaN PA's AM/AM characteristic, while the nonlinear input capacitance is the primary source of AM/PM distortion. Using two 800 MHz GaN PAs, we show that matching networks optimized for linearity can minimize a PA's nonlinear distortions and memory effects.
{"title":"Linearity of GaN HEMT RF power amplifiers - a circuit perspective","authors":"H. Sarbishaei, D. Y. Wu, S. Boumaiza","doi":"10.1109/MWSYM.2012.6259553","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259553","url":null,"abstract":"In this paper, the nonlinearity generation mechanisms causing AM/AM and AM/PM in GaN power amplifier are analyzed from a circuit perspective. The nonlinear device transconductance is found to be the primary source of slow compression in GaN PA's AM/AM characteristic, while the nonlinear input capacitance is the primary source of AM/PM distortion. Using two 800 MHz GaN PAs, we show that matching networks optimized for linearity can minimize a PA's nonlinear distortions and memory effects.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89488942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259650
S. Adhikari, A. Ghiotto, K. Wu
A concept of simultaneous electric and magnetic two-dimensional (2-D) tuning of cavity resonator based on substrate integrated waveguide (SIW) technology is presented and demonstrated. For a dominant TE101 mode SIW cavity resonator, magnetic tuning is achieved by loading a YIG ferrite slab and electric tuning is achieved by placing a varactor diode and capacitors in the cavity. Considering only electric tuning using varactor diodes 1.3% of total tuning range is measured, while for simultaneous electric and magnetic tuning it is 7.9% with unloaded Q-factor better than 130. Using 0.05–0.1 pF of surface mount capacitor a total tuning range of 20% is experimentally achieved. Transmission line theory is used to derive a theoretical 2-D tuned resonant frequency curve, which depicts the variation of cavity resonant frequency with external applied magnetic fields and the capacitance values. The designed dual E- and H-field tunable cavity resonator is cost effective and can be applied in frequency-agile microwave systems.
{"title":"Simultaneous electric and magnetic two-dimensional tuning of substrate integrated waveguide cavity resonator","authors":"S. Adhikari, A. Ghiotto, K. Wu","doi":"10.1109/MWSYM.2012.6259650","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259650","url":null,"abstract":"A concept of simultaneous electric and magnetic two-dimensional (2-D) tuning of cavity resonator based on substrate integrated waveguide (SIW) technology is presented and demonstrated. For a dominant TE101 mode SIW cavity resonator, magnetic tuning is achieved by loading a YIG ferrite slab and electric tuning is achieved by placing a varactor diode and capacitors in the cavity. Considering only electric tuning using varactor diodes 1.3% of total tuning range is measured, while for simultaneous electric and magnetic tuning it is 7.9% with unloaded Q-factor better than 130. Using 0.05–0.1 pF of surface mount capacitor a total tuning range of 20% is experimentally achieved. Transmission line theory is used to derive a theoretical 2-D tuned resonant frequency curve, which depicts the variation of cavity resonant frequency with external applied magnetic fields and the capacitance values. The designed dual E- and H-field tunable cavity resonator is cost effective and can be applied in frequency-agile microwave systems.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"118 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88057251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259472
M. Ercoli, D. Dragomirescu, R. Plana
An extremely compact power splitter based on a modified Wilkinson power divider is presented. The design optimization, based on the use of lumped component, yields state of the art RF performances and an unrivaled size reduction. The splitter is design to operate over 3 octaves (10 – 80 GHz) and measurements in the 10 – 67 GHz frequency range show an IL better then 0.8 dB, a power unbalance below 0.05 dB and isolation better than 10 dB starting from 35 GHz and which reaches a maximum of 27 dB at 60 GHz. Reflection coefficients for the three ports are better than −15 dB with a maximum of −20 dB in the 55 – 67 GHz band.
{"title":"An extremely miniaturized ultra wide band 10–67 GHz Power Splitter in 65 nm CMOS Technology","authors":"M. Ercoli, D. Dragomirescu, R. Plana","doi":"10.1109/MWSYM.2012.6259472","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259472","url":null,"abstract":"An extremely compact power splitter based on a modified Wilkinson power divider is presented. The design optimization, based on the use of lumped component, yields state of the art RF performances and an unrivaled size reduction. The splitter is design to operate over 3 octaves (10 – 80 GHz) and measurements in the 10 – 67 GHz frequency range show an IL better then 0.8 dB, a power unbalance below 0.05 dB and isolation better than 10 dB starting from 35 GHz and which reaches a maximum of 27 dB at 60 GHz. Reflection coefficients for the three ports are better than −15 dB with a maximum of −20 dB in the 55 – 67 GHz band.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"92 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87391558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259628
A. Shurakov, E. Tong, R. Blundell, G. Gol'tsman
The stability of a Hot Electron Bolometer (HEB) mixer can be improved by the use of microwave injection. In this article we report a refinement of this approach. We introduce a microchip controller to facilitate the implementation of the stabilization scheme, and demonstrate that the feedback loop effectively suppresses drifts in the HEB bias current, leading to an improvement in the receiver stability. The measured Allan time of the mixer's IF output power is increased to > 10 s.
{"title":"Microwave stabilization of HEB mixer by a microchip controller","authors":"A. Shurakov, E. Tong, R. Blundell, G. Gol'tsman","doi":"10.1109/MWSYM.2012.6259628","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259628","url":null,"abstract":"The stability of a Hot Electron Bolometer (HEB) mixer can be improved by the use of microwave injection. In this article we report a refinement of this approach. We introduce a microchip controller to facilitate the implementation of the stabilization scheme, and demonstrate that the feedback loop effectively suppresses drifts in the HEB bias current, leading to an improvement in the receiver stability. The measured Allan time of the mixer's IF output power is increased to > 10 s.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88734453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259556
F. Artis, D. Dubuc, C. Blatché, K. Grenier
This paper presents the biological compatibility of a microwave analyzing microsystem of living cells through the indicator of cells proliferation. The cells under investigation correspond to adherent cells of Normal Rat Kidney (NRK). In a first time, both their adhesion and proliferation into the high-frequency-based micro-device have been successfully obtained. In a second step, microwave signals have been applied at different power levels. Experimental studies demonstrate that microwave power levels up to +8,6 dBm do not impact cells proliferation.
{"title":"Biological cells proliferation in microwave microsystems","authors":"F. Artis, D. Dubuc, C. Blatché, K. Grenier","doi":"10.1109/MWSYM.2012.6259556","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259556","url":null,"abstract":"This paper presents the biological compatibility of a microwave analyzing microsystem of living cells through the indicator of cells proliferation. The cells under investigation correspond to adherent cells of Normal Rat Kidney (NRK). In a first time, both their adhesion and proliferation into the high-frequency-based micro-device have been successfully obtained. In a second step, microwave signals have been applied at different power levels. Experimental studies demonstrate that microwave power levels up to +8,6 dBm do not impact cells proliferation.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"28 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83552518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259588
R. Hou, M. Spirito, B. Kooij, F. van Rijs, L. D. de Vreede
This paper presents a new method for the contactless measurement of in-circuit reflection-coefficients (Γinsitu). The proposed method relies on an electromagnetic (EM) model of a known passive structure (e.g. a bondwire array) that can be embedded in any unknown circuitry. By operating the circuit to be investigated normally and probing locally the EM field induced by the known structure inside this circuit, the in-circuit reflection coefficients at boundaries of this structure under the actual operating conditions can be directly obtained. The proposed method is demonstrated on a single bondwire and verified by a set of independent measurements. The high potential of the proposed method for future applications is demonstrated by applying it to a bondwire array that mimics the output connections of a large-periphery high-power device.
{"title":"Contactless measurement of in-circuit reflection coefficients","authors":"R. Hou, M. Spirito, B. Kooij, F. van Rijs, L. D. de Vreede","doi":"10.1109/MWSYM.2012.6259588","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259588","url":null,"abstract":"This paper presents a new method for the contactless measurement of in-circuit reflection-coefficients (Γinsitu). The proposed method relies on an electromagnetic (EM) model of a known passive structure (e.g. a bondwire array) that can be embedded in any unknown circuitry. By operating the circuit to be investigated normally and probing locally the EM field induced by the known structure inside this circuit, the in-circuit reflection coefficients at boundaries of this structure under the actual operating conditions can be directly obtained. The proposed method is demonstrated on a single bondwire and verified by a set of independent measurements. The high potential of the proposed method for future applications is demonstrated by applying it to a bondwire array that mimics the output connections of a large-periphery high-power device.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"13 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79170779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259514
T. Djerafi, A. Ghiotto, K. Wu
Presented in this paper is a simple and robust transition of substrate integrated waveguide (SIW) to rectangular waveguide. Based on a tapered fin-line, this transition is designed for dielectric substrate having a relative permittivity higher than 4. It is fabricated using a standard printed circuit board (PCB) process and inserted in the waveguide without modification to the waveguide dimensions. The robustness of the transition with reference to the relative position error is studied showing excellent stability. Measurement results of a back-to-back transition show excellent performance in a bandwidth of 6% (33–35 GHz) with less than 1 dB of insertion loss and a return loss of better than 15 dB. This low loss and small size transition can be used in the development of microwave and millimeter wave circuits.
{"title":"Antipodal fin-line waveguide to substrate integrated waveguide transition","authors":"T. Djerafi, A. Ghiotto, K. Wu","doi":"10.1109/MWSYM.2012.6259514","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259514","url":null,"abstract":"Presented in this paper is a simple and robust transition of substrate integrated waveguide (SIW) to rectangular waveguide. Based on a tapered fin-line, this transition is designed for dielectric substrate having a relative permittivity higher than 4. It is fabricated using a standard printed circuit board (PCB) process and inserted in the waveguide without modification to the waveguide dimensions. The robustness of the transition with reference to the relative position error is studied showing excellent stability. Measurement results of a back-to-back transition show excellent performance in a bandwidth of 6% (33–35 GHz) with less than 1 dB of insertion loss and a return loss of better than 15 dB. This low loss and small size transition can be used in the development of microwave and millimeter wave circuits.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"18 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81252480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259422
F. A. Malekzadeh, A. V. van Roermund, R. Mahmoudi
Combination of a band-pass signal with a low frequency sinusoid signal, also known as dithering, will linearize the performance and reduce the reactive power loss of class D amplifiers. The expectations are verified through realization and measurement of a 2 watt current mode LDMOS class D amplifier operating at 2.014 GHz. The drain efficiency is enhanced from 55 to 59 percent, while giving ACPR levels below −33dBc for first WCDMA adjacent channel.
{"title":"Low frequency dithering technique for linearization of current mode class D amplifiers","authors":"F. A. Malekzadeh, A. V. van Roermund, R. Mahmoudi","doi":"10.1109/MWSYM.2012.6259422","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259422","url":null,"abstract":"Combination of a band-pass signal with a low frequency sinusoid signal, also known as dithering, will linearize the performance and reduce the reactive power loss of class D amplifiers. The expectations are verified through realization and measurement of a 2 watt current mode LDMOS class D amplifier operating at 2.014 GHz. The drain efficiency is enhanced from 55 to 59 percent, while giving ACPR levels below −33dBc for first WCDMA adjacent channel.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88740150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6258339
S. Beer, H. Gulan, M. Pauli, C. Rusch, G. Kunkel, T. Zwick
This paper presents a 122-GHz chip-to-antenna wire bond interconnect for low-cost, fully integrated transceivers. It is based on the standard ball-stitch bond technology and uses planar transmission lines for matching. A study on the effects of process tolerances is given. Finally, an antenna which is integrated into a QFN plastic package is characterized together with the chip-to-antenna interconnect.
{"title":"122-GHz chip-to-antenna wire bond interconnect with high repeatability","authors":"S. Beer, H. Gulan, M. Pauli, C. Rusch, G. Kunkel, T. Zwick","doi":"10.1109/MWSYM.2012.6258339","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6258339","url":null,"abstract":"This paper presents a 122-GHz chip-to-antenna wire bond interconnect for low-cost, fully integrated transceivers. It is based on the standard ball-stitch bond technology and uses planar transmission lines for matching. A study on the effects of process tolerances is given. Finally, an antenna which is integrated into a QFN plastic package is characterized together with the chip-to-antenna interconnect.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77212920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6257757
J. Barr, I. Hunter, I. Robertson, L. Boglione, J. McKinney, M. Ward-Callan, N. Ridler, H. Komrij
With Dr. Roger Pollard's passing on December 3rd, 2011, his friends and colleagues take this opportunity to look back and review his numerous contributions.
随着罗杰·波拉德博士于2011年12月3日逝世，他的朋友和同事借此机会回顾和回顾他的众多贡献。
{"title":"Remembering Roger Pollard","authors":"J. Barr, I. Hunter, I. Robertson, L. Boglione, J. McKinney, M. Ward-Callan, N. Ridler, H. Komrij","doi":"10.1109/MWSYM.2012.6257757","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6257757","url":null,"abstract":"With Dr. Roger Pollard's passing on December 3rd, 2011, his friends and colleagues take this opportunity to look back and review his numerous contributions.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"31 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77346515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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