Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259493
Cong Wang, Nam-Young Kim
A harmonic noise frequency filtering (HNFF) LC voltage-controlled oscillator (VCO) is fabricated using asymmetric inductance tank (AIT) in InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) technology. In order to optimize phase noise, the AIT and HNFF techniques are presented. The proposed VCO exhibited the phase noise of −117.3 dBc/Hz and −129.96 dBc/Hz at 100 kHz and 1 MHz offset frequencies and a tuning range from 1.46 GHz to 1.721 GHz. The total on-chip LC VCO is implanted in 0.85 × 0.85 mm2 chip area.
{"title":"Design of low phase noise LC VCO using asymmetric inductance tank and HNFF technology in InGaP/GaAs HBT process","authors":"Cong Wang, Nam-Young Kim","doi":"10.1109/MWSYM.2012.6259493","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259493","url":null,"abstract":"A harmonic noise frequency filtering (HNFF) LC voltage-controlled oscillator (VCO) is fabricated using asymmetric inductance tank (AIT) in InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) technology. In order to optimize phase noise, the AIT and HNFF techniques are presented. The proposed VCO exhibited the phase noise of −117.3 dBc/Hz and −129.96 dBc/Hz at 100 kHz and 1 MHz offset frequencies and a tuning range from 1.46 GHz to 1.721 GHz. The total on-chip LC VCO is implanted in 0.85 × 0.85 mm2 chip area.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"36 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75340210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259612
R. Gawande, R. Reeves, K. Cleary, A. Readhead, T. Gaier, P. Kangaslahti, L. Samoska, S. Church, M. Sieth, P. Voll, A. Harris, R. Lai, S. Sarkozy
We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using a 35 nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27–45 K over the frequency band of 75–111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80–110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.
{"title":"W-band heterodyne receiver module with 27 K noise temperature","authors":"R. Gawande, R. Reeves, K. Cleary, A. Readhead, T. Gaier, P. Kangaslahti, L. Samoska, S. Church, M. Sieth, P. Voll, A. Harris, R. Lai, S. Sarkozy","doi":"10.1109/MWSYM.2012.6259612","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259612","url":null,"abstract":"We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using a 35 nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27–45 K over the frequency band of 75–111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80–110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75582616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6257768
A. Soury, E. Ngoya
Since the last decade, the behavioral modeling of RF functional blocks (amplifiers, mixers, (de)modulators, etc.) has been a flourishing research domain that has led to a better overall understanding of the nonlinear dynamics impact to the circuit performances. Recently the X-parameter paradigm has been introduced. The formalism provides a comprehensive description of the relationships between all the harmonics of the scattered and incident power waves at the ports of a device, and represents a major advancement in RF circuit characterization. The formalism however still needs effective handling of the long term memory effects. In this paper, a simple and efficient approach is proposed to model long-term memory effects within X-parameter. It ensures both a simple extraction procedure and an efficient numerical implementation.
{"title":"Handling long-term memory effects in X-parameter model","authors":"A. Soury, E. Ngoya","doi":"10.1109/MWSYM.2012.6257768","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6257768","url":null,"abstract":"Since the last decade, the behavioral modeling of RF functional blocks (amplifiers, mixers, (de)modulators, etc.) has been a flourishing research domain that has led to a better overall understanding of the nonlinear dynamics impact to the circuit performances. Recently the X-parameter paradigm has been introduced. The formalism provides a comprehensive description of the relationships between all the harmonics of the scattered and incident power waves at the ports of a device, and represents a major advancement in RF circuit characterization. The formalism however still needs effective handling of the long term memory effects. In this paper, a simple and efficient approach is proposed to model long-term memory effects within X-parameter. It ensures both a simple extraction procedure and an efficient numerical implementation.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"10 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75786572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6257767
S. Seok, Janggil Kim, N. Rolland
This paper presents a wideband 60 GHz bandpass filter fabricated on flexible 50 µm-thick PerMX polymer substrate. The implemented filter is based on conventional parallel-coupled half-wavelength resonators. Thanks to the support substrate that will be finally released, the process precision can be maintained at microfabrication level. A wideband filter has been achieved through optimization of the narrow gaps between the adjacent resonators. The implemented filter shows insertion loss of 4.2 dB at the center frequency of 63.5 GHz while its return loss is better than 14 dB including two microstrip-to-CPW transitions. In addition, 3-dB bandwidth of 19 % at the center frequency of 63.5 GHz is demonstrated.
{"title":"Wideband 60 GHz bandpass filter based on flexible PerMX polymer substrate","authors":"S. Seok, Janggil Kim, N. Rolland","doi":"10.1109/MWSYM.2012.6257767","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6257767","url":null,"abstract":"This paper presents a wideband 60 GHz bandpass filter fabricated on flexible 50 µm-thick PerMX polymer substrate. The implemented filter is based on conventional parallel-coupled half-wavelength resonators. Thanks to the support substrate that will be finally released, the process precision can be maintained at microfabrication level. A wideband filter has been achieved through optimization of the narrow gaps between the adjacent resonators. The implemented filter shows insertion loss of 4.2 dB at the center frequency of 63.5 GHz while its return loss is better than 14 dB including two microstrip-to-CPW transitions. In addition, 3-dB bandwidth of 19 % at the center frequency of 63.5 GHz is demonstrated.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"70 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74832737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6258261
S. Shopov, R. Amaya, J. Rogers, C. Plett
A folding technique is proposed to reduce the size of CPW based branch-line couplers without compromising their electrical characteristics. The technique is used to fabricate a high-performance 90° 70–80 GHz hybrid coupler in 130-nm CMOS with a 35% layout area reduction. Grounded coplanar waveguide (CPWG) based structures are used for the low impedance lines while complying with the CMOS metal spacing and width layout rules. Experimental measurements across the bandwidth show a maximum insertion loss of 1.4 dB, an amplitude imbalance less than 0.6 dB, a phase imbalance less than 2°, and an input return loss greater than 19.5 dB. The coupler footprint is 0.203 mm2.
{"title":"High-performance reduced-size 70–80 GHz CMOS branch-line hybrid using CPW and CPWG guided-wave structures","authors":"S. Shopov, R. Amaya, J. Rogers, C. Plett","doi":"10.1109/MWSYM.2012.6258261","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6258261","url":null,"abstract":"A folding technique is proposed to reduce the size of CPW based branch-line couplers without compromising their electrical characteristics. The technique is used to fabricate a high-performance 90° 70–80 GHz hybrid coupler in 130-nm CMOS with a 35% layout area reduction. Grounded coplanar waveguide (CPWG) based structures are used for the low impedance lines while complying with the CMOS metal spacing and width layout rules. Experimental measurements across the bandwidth show a maximum insertion loss of 1.4 dB, an amplitude imbalance less than 0.6 dB, a phase imbalance less than 2°, and an input return loss greater than 19.5 dB. The coupler footprint is 0.203 mm2.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73174530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259579
A. Ahmed, J. Babesku, J. Schultz, H. Ladhani, Jeffrey K. Jones, M. Bokatius, P. Hart
In this paper we demonstrate high gain, high efficiency, single and balanced Doherty power amplifiers (PAs) that have the ability to transmit signals which occupy the full frequency band from 1930MHz–1995MHz. The PAs have been designed using a new generation of Freescale LDMOS power transistors [1], in which the drain side video-bandwidth (VBW) has been enhanced. For the first time we will show the ability of the PA to handle wideband envelope signals (> 80MHz) with excellent nonlinearity correction using Digital Pre-distortion (DPD). Narrow band as well as wideband DPD measurement results will be presented for single and balanced Doherty PAs including driver stages. These RF Doherty PAs are targeted for use in next generation wideband wireless communication systems.
{"title":"A 350W, 2GHz, 44% efficient LDMOS power amplifier design with capability to handle a wideband 65MHz envelope signal","authors":"A. Ahmed, J. Babesku, J. Schultz, H. Ladhani, Jeffrey K. Jones, M. Bokatius, P. Hart","doi":"10.1109/MWSYM.2012.6259579","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259579","url":null,"abstract":"In this paper we demonstrate high gain, high efficiency, single and balanced Doherty power amplifiers (PAs) that have the ability to transmit signals which occupy the full frequency band from 1930MHz–1995MHz. The PAs have been designed using a new generation of Freescale LDMOS power transistors [1], in which the drain side video-bandwidth (VBW) has been enhanced. For the first time we will show the ability of the PA to handle wideband envelope signals (> 80MHz) with excellent nonlinearity correction using Digital Pre-distortion (DPD). Narrow band as well as wideband DPD measurement results will be presented for single and balanced Doherty PAs including driver stages. These RF Doherty PAs are targeted for use in next generation wideband wireless communication systems.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"11 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72763028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6258390
J. Naqui, M. Durán-Sindreu, F. Martín
This paper is focused on the analysis of coplanar waveguides (CPW) loaded with symmetric resonators (such as split ring resonators and stepped impedance resonators) whose symmetry plane behaves as an electric wall at the fundamental resonance frequency. If these resonators are symmetrically etched in the back substrate side of the CPW, the resonators are not excited, and signal propagation along the CPW is allowed. Conversely, if the symmetry is truncated, the magnetic wall of the CPW (fundamental mode) is not aligned with the electric wall of the resonator, and signal propagation is inhibited in the vicinity of the first resonance frequency. These structures can be of interest for the design of novel sensors or radiofrequency (RF) bar codes, based on the deviation from symmetry. The principle of operation of such structures is illustrated and experimentally validated by proof-of-concept devices.
{"title":"On the symmetry properties of coplanar waveguides loaded with symmetric resonators: Analysis and potential applications","authors":"J. Naqui, M. Durán-Sindreu, F. Martín","doi":"10.1109/MWSYM.2012.6258390","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6258390","url":null,"abstract":"This paper is focused on the analysis of coplanar waveguides (CPW) loaded with symmetric resonators (such as split ring resonators and stepped impedance resonators) whose symmetry plane behaves as an electric wall at the fundamental resonance frequency. If these resonators are symmetrically etched in the back substrate side of the CPW, the resonators are not excited, and signal propagation along the CPW is allowed. Conversely, if the symmetry is truncated, the magnetic wall of the CPW (fundamental mode) is not aligned with the electric wall of the resonator, and signal propagation is inhibited in the vicinity of the first resonance frequency. These structures can be of interest for the design of novel sensors or radiofrequency (RF) bar codes, based on the deviation from symmetry. The principle of operation of such structures is illustrated and experimentally validated by proof-of-concept devices.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"87 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72790140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6258362
Qianqian Lei, Songbai He, Nina Zhang, F. You, Lei Dong, Zhebin Hu
This paper presents design and implementation about an asymmetrical-Doherty-power-amplifier (A-DPA). The back-off efficiency and operating bandwidth are improved through considering knee-voltage (Vknee) effect and impedance-transformation-ratio (ITR) of inverter. The A-DPA is fabricated with NXP's 7th Generation Si LDMOS device BLF7G27-75P accompanied by the proposed combining network. Within a bandwidth of 300MHz, measurements perform drain efficiency of η ≧ 41 % and Gain of 14.1±0.6 dB over 7dB output power back-off for continuous wave signal. With linearization, the ADPA shows ACLR ≦ −45.8 dBc with drain efficiency η ≧ 41.4% in 2.25∼2.55 GHz under WCDMA signal with 7.8 dB PAPR at average power of 43 dBm. This is the widest bandwidth of DPA with high drain efficiency at output power 7 dB back-off using Si LDMOS packaged devices to the best of the authors' knowledge.
{"title":"Efficiency-enhanced Doherty amplifier with extended bandwidth based on asymmetrical drain voltage","authors":"Qianqian Lei, Songbai He, Nina Zhang, F. You, Lei Dong, Zhebin Hu","doi":"10.1109/MWSYM.2012.6258362","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6258362","url":null,"abstract":"This paper presents design and implementation about an asymmetrical-Doherty-power-amplifier (A-DPA). The back-off efficiency and operating bandwidth are improved through considering knee-voltage (Vknee) effect and impedance-transformation-ratio (ITR) of inverter. The A-DPA is fabricated with NXP's 7th Generation Si LDMOS device BLF7G27-75P accompanied by the proposed combining network. Within a bandwidth of 300MHz, measurements perform drain efficiency of η ≧ 41 % and Gain of 14.1±0.6 dB over 7dB output power back-off for continuous wave signal. With linearization, the ADPA shows ACLR ≦ −45.8 dBc with drain efficiency η ≧ 41.4% in 2.25∼2.55 GHz under WCDMA signal with 7.8 dB PAPR at average power of 43 dBm. This is the widest bandwidth of DPA with high drain efficiency at output power 7 dB back-off using Si LDMOS packaged devices to the best of the authors' knowledge.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"40 3","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72572410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259390
H. Kayano, T. Kawaguchi, N. Shiokawa, K. Nakayama, M. Yamazaki
We have proposed an ultra-narrow band tunable superconducting filter with constant bandwidth and same transmission zero points for X-band RF applications. This tunable filter tuned center frequency by dielectric rods with actuator. At the same time, coupling coefficients and external Q of the filter change with individual gradient. This filter realized constant bandwidth and same transmission zero points by means of position at coupling microstrip line. The developed tunable superconducting filter has 4-pole elliptic function response for sharp skirt characteristic. Tuning range was between 9700 MHz and 9800 MHz for weather radar. Also, this filter had fractional bandwidth of 0.04%.
{"title":"Ultra-narrow band tunable superconducting filter with constant bandwidth and same transmission zero points","authors":"H. Kayano, T. Kawaguchi, N. Shiokawa, K. Nakayama, M. Yamazaki","doi":"10.1109/MWSYM.2012.6259390","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259390","url":null,"abstract":"We have proposed an ultra-narrow band tunable superconducting filter with constant bandwidth and same transmission zero points for X-band RF applications. This tunable filter tuned center frequency by dielectric rods with actuator. At the same time, coupling coefficients and external Q of the filter change with individual gradient. This filter realized constant bandwidth and same transmission zero points by means of position at coupling microstrip line. The developed tunable superconducting filter has 4-pole elliptic function response for sharp skirt characteristic. Tuning range was between 9700 MHz and 9800 MHz for weather radar. Also, this filter had fractional bandwidth of 0.04%.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"38 3","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72601906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1109/MWSYM.2012.6259603
F. V. van Vliet, E. Klumperink, Michiel C. M. Soer, S. K. Garakoui, A. de Boer, A. P. de Hek, W. Heij, B. Nauta
Phased-Arrays are increasingly used, and require Silicon implementations to result in affordable multi-beam systems. In this paper, CMOS implementations of two novel analogue beamforming multi-channel receivers will be presented. A narrow-band highly linear system exploiting switches and capacitors in advanced CMOS is presented, implementing a fully passive switched capacitor vector modulator exploiting a zero-IF I/Q mixer: This technique is not applicable to very wideband phased-array receivers. These systems require true-time delay beamforming, which is implemented in the second CMOS implementation. An innovative gm-RC implementation of a true-time delay cell is exploited in a four-channel beamforming receiver with more than 1.5 GHz bandwidth, in a standard 0.13 um CMOS process. Professional phased-arrays can often not live with the dynamic range limitations imposed by these implementations. To that end a SiGe implementation of an integrated receiver was realized targeting a digital beamforming phased-array. Dynamic range and flexibility of use were the main driving factors. Alltogether, these results show large progress with respect to the feasibility of Silicon-based phased-array front-end implementation for commercial as well as professional phased-arrays.
相控阵越来越多地使用，并且需要硅实现来实现经济实惠的多波束系统。本文将介绍两种新型模拟波束形成多通道接收机的CMOS实现。提出了一种利用先进CMOS开关和电容的窄带高线性系统，实现了一种利用零中频I/Q混频器的全无源开关电容矢量调制器。这种技术不适用于宽带相控阵接收机。这些系统需要实时延迟波束形成，这在第二个CMOS实现中实现。在标准的0.13 um CMOS工艺中，在带宽超过1.5 GHz的四通道波束成形接收器中开发了一种创新的gm-RC实时延迟单元实现。专业相控阵通常无法适应这些实现所带来的动态范围限制。为此，实现了一种针对数字波束形成相控阵的集成接收机的SiGe实现。动态范围和使用灵活性是主要驱动因素。总之，这些结果显示了硅基相控阵前端在商业和专业相控阵应用方面的可行性。
{"title":"Advance in silicon phased-array receiver IC's","authors":"F. V. van Vliet, E. Klumperink, Michiel C. M. Soer, S. K. Garakoui, A. de Boer, A. P. de Hek, W. Heij, B. Nauta","doi":"10.1109/MWSYM.2012.6259603","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259603","url":null,"abstract":"Phased-Arrays are increasingly used, and require Silicon implementations to result in affordable multi-beam systems. In this paper, CMOS implementations of two novel analogue beamforming multi-channel receivers will be presented. A narrow-band highly linear system exploiting switches and capacitors in advanced CMOS is presented, implementing a fully passive switched capacitor vector modulator exploiting a zero-IF I/Q mixer: This technique is not applicable to very wideband phased-array receivers. These systems require true-time delay beamforming, which is implemented in the second CMOS implementation. An innovative gm-RC implementation of a true-time delay cell is exploited in a four-channel beamforming receiver with more than 1.5 GHz bandwidth, in a standard 0.13 um CMOS process. Professional phased-arrays can often not live with the dynamic range limitations imposed by these implementations. To that end a SiGe implementation of an integrated receiver was realized targeting a digital beamforming phased-array. Dynamic range and flexibility of use were the main driving factors. Alltogether, these results show large progress with respect to the feasibility of Silicon-based phased-array front-end implementation for commercial as well as professional phased-arrays.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84251067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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