Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541605
B. Beuerle, J. Campion, U. Shah, J. Oberhammer
For sub-millimeter and millimeter wave applications rectangular waveguides are an ideal transmission medium. Compared to conventional, metal-milled rectangular waveguides, silicon micromachined waveguides offer a number of advantages. In this paper we present a low-loss silicon micromachined waveguide technology based on a double H-plane split for the frequency bands of 110 – 170 GHz and 220 – 330 GHz. For the upper band a reduced height waveguide is presented, which achieves a loss per unit length of 0.02 – 0.10 dB/mm. This technology has been further adapted to implement a full height waveguide for the lower frequency band of 110 – 170 GHz. The full height waveguide takes advantage of the benefits of the double H-plane split technique to overcome the challenges of fabricating micromachined waveguides at lower frequencies. With measured insertion loss of 0.007 – 0.013 dB/mm, averaging 0.009 dB/mm over the whole band, this technology offers the lowest insertion loss of any D-band waveguide to date. The unloaded Q factor of the D-band waveguide technology is estimated to be in excess of 1600, while a value of 750 has been measured for the reduced height upper band waveguide.
{"title":"Low-Loss Silicon Micromachined Waveguides Above 100 GHz Utilising Multiple H-Plane Splits","authors":"B. Beuerle, J. Campion, U. Shah, J. Oberhammer","doi":"10.23919/EUMC.2018.8541605","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541605","url":null,"abstract":"For sub-millimeter and millimeter wave applications rectangular waveguides are an ideal transmission medium. Compared to conventional, metal-milled rectangular waveguides, silicon micromachined waveguides offer a number of advantages. In this paper we present a low-loss silicon micromachined waveguide technology based on a double H-plane split for the frequency bands of 110 – 170 GHz and 220 – 330 GHz. For the upper band a reduced height waveguide is presented, which achieves a loss per unit length of 0.02 – 0.10 dB/mm. This technology has been further adapted to implement a full height waveguide for the lower frequency band of 110 – 170 GHz. The full height waveguide takes advantage of the benefits of the double H-plane split technique to overcome the challenges of fabricating micromachined waveguides at lower frequencies. With measured insertion loss of 0.007 – 0.013 dB/mm, averaging 0.009 dB/mm over the whole band, this technology offers the lowest insertion loss of any D-band waveguide to date. The unloaded Q factor of the D-band waveguide technology is estimated to be in excess of 1600, while a value of 750 has been measured for the reduced height upper band waveguide.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"113 1","pages":"1041-1044"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81672713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541501
A. Lavrinenko, R. E. Jacobsen, S. Arslanagić
Water has been introduced as a unique component of all-dielectric multifunctional metasurfaces for microwaves. Typically absorbing properties of arrays in free-air arrangement have been analyzed. Here we report on promising performance of a water-filled metasurface in a microwave waveguide setup. The metasurface has a one row of cylindrical cavities. Being filled with water the metasurface exhibits effective modulation properties opening and closing the waveguide transmission channel upon 90° rotations. It acts as a wire grid polarizer, however temperature dependence of water dielectric characteristic, possible deformation of the cavities shapes and rotation of elements form a set of effective stimulus for possible tuning of transmission/reflection properties.
{"title":"Low-loss Water-based Metasurface in Waveguide Environment","authors":"A. Lavrinenko, R. E. Jacobsen, S. Arslanagić","doi":"10.23919/EUMC.2018.8541501","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541501","url":null,"abstract":"Water has been introduced as a unique component of all-dielectric multifunctional metasurfaces for microwaves. Typically absorbing properties of arrays in free-air arrangement have been analyzed. Here we report on promising performance of a water-filled metasurface in a microwave waveguide setup. The metasurface has a one row of cylindrical cavities. Being filled with water the metasurface exhibits effective modulation properties opening and closing the waveguide transmission channel upon 90° rotations. It acts as a wire grid polarizer, however temperature dependence of water dielectric characteristic, possible deformation of the cavities shapes and rotation of elements form a set of effective stimulus for possible tuning of transmission/reflection properties.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"48 1","pages":"819-822"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90640651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EURAD.2018.8546526
J. Grzyb, P. R. Vazquez, N. Sarmah, B. Heinemann, U. Pfeiffer
This paper reports on characterization and performance evaluation of a 1-m 220–260 GHz tunable carrier wireless link with highly-integrated direct-conversion quadrature TX/RX modules implemented in 0.13μm SiGe HBT technology with ft/fmax of 350/550 GHz. Under limited IF bandwidth constraints of 15 GHz, the maximum achieved data rates for BPSK/QPSK modulation schemes are 35 Gbps with an EVM of 28.9 % and 65 Gbps with an EVM of 31.5 %, respectively. It is further found that the current link performance is not limited by the AWGN-related SNR but mainly affected by the RF front-end imperfections related to large operation bandwidth.
{"title":"Performance Evaluation of a 220–260 GHz LO Tunable BPSK/QPSK Wireless Link in SiGe HBT Technology","authors":"J. Grzyb, P. R. Vazquez, N. Sarmah, B. Heinemann, U. Pfeiffer","doi":"10.23919/EURAD.2018.8546526","DOIUrl":"https://doi.org/10.23919/EURAD.2018.8546526","url":null,"abstract":"This paper reports on characterization and performance evaluation of a 1-m 220–260 GHz tunable carrier wireless link with highly-integrated direct-conversion quadrature TX/RX modules implemented in 0.13μm SiGe HBT technology with ft/fmax of 350/550 GHz. Under limited IF bandwidth constraints of 15 GHz, the maximum achieved data rates for BPSK/QPSK modulation schemes are 35 Gbps with an EVM of 28.9 % and 65 Gbps with an EVM of 31.5 %, respectively. It is further found that the current link performance is not limited by the AWGN-related SNR but mainly affected by the RF front-end imperfections related to large operation bandwidth.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"17 1","pages":"1397-1400"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90885582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539938
M. Ayad, A. Couturier, P. Poilvert, L. Marechal, P. Auxemery
This paper presents the realization and characteristics of broadband plastic low cost packaged 5G High Power Frond-End (HPFE) operating in 24-31GHz bandwidth. This demonstrator includes a Transmit and Receive paths realized on mixed technologies: 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) and 150nm Gallium Arsenide (GaAs). Continuous Wave (CW) measured power results of the Transmit path (Tx) demonstrates a maximum output power (POUT, Tx) higher than 2W (33.5dBm) with 24% power added efficiency (P AE), and 36dB of insertion gain (GI, Tx) in the 24-31GHz bandwidth. The receiver path (Rx) presents an maximum output power (POUT, Rx) of 30mW (15.5dBm) and an average Noise Figure (NF) of 3.6dB with an associated Insertion Gain (GI, Rx) of 20dB in the same bandwidth. The HPFE/Tx linearity has been investigated with several M-QAM modulation signals with 25/50 and 100MHz channel spacing and using Digital Pre-Distortion (DPD) leading to 48dBc Adjacent Channel Leakage Ratio (ACLR) and 40dB Mean Squared Error (MSE) for average output powers ranging from 17dBm to 25dBm. The linearity performances have been compared to the ones obtained with two other linear GaAs amplifiers (P A1 and P A2) dedicated to point to point telecommunications application: the HPFE presents similar linearity performances associated to a higher efficiency.
介绍了工作在24-31GHz带宽范围内的宽带塑料低成本封装5G高功率前端(HPFE)的实现及其特点。该演示器包括采用混合技术实现的发射和接收路径:150nm碳化硅上的氮化镓(AlGaN/GaN on SiC)和150nm砷化镓(GaAs)。发射路径(Tx)的连续波(CW)测量功率结果表明，在24-31GHz带宽下，最大输出功率(POUT, Tx)高于2W (33.5dBm)，功率附加效率(P AE)为24%，插入增益(GI, Tx)为36dB。接收器路径(Rx)在相同带宽下的最大输出功率(POUT, Rx)为30mW (15.5dBm)，平均噪声系数(NF)为3.6dB，相关插入增益(GI, Rx)为20dB。我们研究了几种具有25/50和100MHz信道间隔的M-QAM调制信号的HPFE/Tx线性度，并使用数字预失真(DPD)在17dBm至25dBm的平均输出功率范围内导致48dBc的相邻信道泄漏比(ACLR)和40dB的均方误差(MSE)。将线性性能与专用于点对点电信应用的另外两个线性GaAs放大器(pa1和pa2)的线性性能进行了比较:HPFE具有与更高效率相关的相似线性性能。
{"title":"Mixed Technologies Packaged High Power Frond-End for Broadband 28GHz 5G Solutions","authors":"M. Ayad, A. Couturier, P. Poilvert, L. Marechal, P. Auxemery","doi":"10.23919/EUMIC.2018.8539938","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539938","url":null,"abstract":"This paper presents the realization and characteristics of broadband plastic low cost packaged 5G High Power Frond-End (HPFE) operating in 24-31GHz bandwidth. This demonstrator includes a Transmit and Receive paths realized on mixed technologies: 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) and 150nm Gallium Arsenide (GaAs). Continuous Wave (CW) measured power results of the Transmit path (Tx) demonstrates a maximum output power (POUT, Tx) higher than 2W (33.5dBm) with 24% power added efficiency (P AE), and 36dB of insertion gain (GI, Tx) in the 24-31GHz bandwidth. The receiver path (Rx) presents an maximum output power (POUT, Rx) of 30mW (15.5dBm) and an average Noise Figure (NF) of 3.6dB with an associated Insertion Gain (GI, Rx) of 20dB in the same bandwidth. The HPFE/Tx linearity has been investigated with several M-QAM modulation signals with 25/50 and 100MHz channel spacing and using Digital Pre-Distortion (DPD) leading to 48dBc Adjacent Channel Leakage Ratio (ACLR) and 40dB Mean Squared Error (MSE) for average output powers ranging from 17dBm to 25dBm. The linearity performances have been compared to the ones obtained with two other linear GaAs amplifiers (P A1 and P A2) dedicated to point to point telecommunications application: the HPFE presents similar linearity performances associated to a higher efficiency.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"41 1","pages":"1257-1260"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87486560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541502
M. García-Vigueras, C. Molero
Polarising screens based on the use of fully metallic three-dimensional unit-cells are here reported. Two type of cells are proposed to build the doubly-periodic architecture, the second one allowing for an extended axial-ratio bandwidth. Both unit-cells are based on the use of metallic waveguide sections operating well below cutoff. In spite of being reactive, total transmission through the cells is possible thanks to the perforation of several resonators in the structure. These perforations allow, additionally, to tune the phase of the outgoing wave and to generate a circularly polarised signal from a 45° -slant linearly polarised impinging one. Equivalent circuit models are proposed in each case to understand the cells behavior and to help in the design of two polarisers operating around 20 GHz and providing good axial-ratio performance.
{"title":"Circuital Analysis of Full-Metal Polarisers Based on 3D Unit-Cells","authors":"M. García-Vigueras, C. Molero","doi":"10.23919/EUMC.2018.8541502","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541502","url":null,"abstract":"Polarising screens based on the use of fully metallic three-dimensional unit-cells are here reported. Two type of cells are proposed to build the doubly-periodic architecture, the second one allowing for an extended axial-ratio bandwidth. Both unit-cells are based on the use of metallic waveguide sections operating well below cutoff. In spite of being reactive, total transmission through the cells is possible thanks to the perforation of several resonators in the structure. These perforations allow, additionally, to tune the phase of the outgoing wave and to generate a circularly polarised signal from a 45° -slant linearly polarised impinging one. Equivalent circuit models are proposed in each case to understand the cells behavior and to help in the design of two polarisers operating around 20 GHz and providing good axial-ratio performance.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"73 1","pages":"149-152"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87173730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541736
Kyung-Jin Baik, SangJoong Lee, Byung-Jun Jang
In this paper, we propose a hybrid received signal strength indication (RSSI) - angle of arrival (AoA) positioning system with only one time-modulated array (TMA) receiver for LoRa IoT devices. The proposed system has the advantage of simpler hardware configuration than a conventional multiple receiver-based positioning system since it uses only one TMA receiver. Additionally, our system does not require clock synchronization because it depends on RSSI and AoA information. The TMA receiver consists of two antennas and a single-pole double-throw (SPDT) switch. The two antennas receive the signal from the target under the control of the SPDT switch and harmonic components are generated by the switching frequency of the switch. RSSI and AoA parameters can be calculated using fundamental and harmonic components. Using the RSSI and AoA of the target, the coordinates of the position are calculated by a Lab Viewprogram in real-time. In order to evaluate the performance of this system, we conducted experiments to find the position of a LoRa end-device in an outdoor environment. From the results, we confirmed that the positioning of the LoRa end-device could be precisely estimated using only one TMA receiver.
{"title":"Hybrid RSSI-AoA Positioning System with Single Time-Modulated Array Receiver for LoRa IoT","authors":"Kyung-Jin Baik, SangJoong Lee, Byung-Jun Jang","doi":"10.23919/EUMC.2018.8541736","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541736","url":null,"abstract":"In this paper, we propose a hybrid received signal strength indication (RSSI) - angle of arrival (AoA) positioning system with only one time-modulated array (TMA) receiver for LoRa IoT devices. The proposed system has the advantage of simpler hardware configuration than a conventional multiple receiver-based positioning system since it uses only one TMA receiver. Additionally, our system does not require clock synchronization because it depends on RSSI and AoA information. The TMA receiver consists of two antennas and a single-pole double-throw (SPDT) switch. The two antennas receive the signal from the target under the control of the SPDT switch and harmonic components are generated by the switching frequency of the switch. RSSI and AoA parameters can be calculated using fundamental and harmonic components. Using the RSSI and AoA of the target, the coordinates of the position are calculated by a Lab Viewprogram in real-time. In order to evaluate the performance of this system, we conducted experiments to find the position of a LoRa end-device in an outdoor environment. From the results, we confirmed that the positioning of the LoRa end-device could be precisely estimated using only one TMA receiver.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"60 1","pages":"1133-1136"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86302271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539955
S. Riedmuller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, H. Blanck, F. Scholz
By utilizing a novel three-layer resist process, InAlN/AlN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different Γ -gate shapes on RF power performance is reported. A Γ-gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.
{"title":"A Three-Layer Resist Process for T - and Γ-Gates in High Electron Mobility Transistor Fabrication","authors":"S. Riedmuller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, H. Blanck, F. Scholz","doi":"10.23919/EUMIC.2018.8539955","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539955","url":null,"abstract":"By utilizing a novel three-layer resist process, InAlN/AlN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different Γ -gate shapes on RF power performance is reported. A Γ-gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"86 1","pages":"1277-1280"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79728051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541805
M. Koohi, Suhyun Nam, A. Mortazawi
The linearity of intrinsically switchable thin film bulk acoustic wave resonator (FBAR) filters based on ferroelectric barium strontium titanate (BST) is investigated. A 2.5 stage ladder type BST FBAR filter is designed and fabricated with an insertion loss of 4.3 dB and a fractional bandwidth of 2.5% at the center frequency of 2.2 GHz. Third-order intercept point $(mathbf{IP}_{mathbf{3}})$ measurements are conducted to characterize the linearity of the filter. The measured $mathbf{IIP}_{3}$ value for the filter is 47 dBm.
{"title":"Linearity Measurements of Intrinsically Switchable BST FBAR Filters","authors":"M. Koohi, Suhyun Nam, A. Mortazawi","doi":"10.23919/EUMC.2018.8541805","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541805","url":null,"abstract":"The linearity of intrinsically switchable thin film bulk acoustic wave resonator (FBAR) filters based on ferroelectric barium strontium titanate (BST) is investigated. A 2.5 stage ladder type BST FBAR filter is designed and fabricated with an insertion loss of 4.3 dB and a fractional bandwidth of 2.5% at the center frequency of 2.2 GHz. Third-order intercept point $(mathbf{IP}_{mathbf{3}})$ measurements are conducted to characterize the linearity of the filter. The measured $mathbf{IIP}_{3}$ value for the filter is 47 dBm.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"23 1","pages":"830-832"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83738891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EURAD.2018.8546558
G. Richichi, G. Junkin
In this paper, a theoretical and numerical analysis to determine the properties of circularly polarized helical beams is presented. A beam-port has been programmed to reproduce the fields radiated by a circularly polarized helical beam antenna designed at the frequency of 10GHz. The propagation of four different circularly polarized helical modes over a distance of 3 m has been studied using time-domain analysis with CFDTD and analytical models. Thanks to the great volume of the simulations, the properties of these beam have been delineated and compared with the linearly polarized helical beams. The design of the antenna and the beam-port was developed using the CFDTD method and a Titan-XP GPU.
{"title":"Characteristics of Circularly Polarized Multimode Helical Beams","authors":"G. Richichi, G. Junkin","doi":"10.23919/EURAD.2018.8546558","DOIUrl":"https://doi.org/10.23919/EURAD.2018.8546558","url":null,"abstract":"In this paper, a theoretical and numerical analysis to determine the properties of circularly polarized helical beams is presented. A beam-port has been programmed to reproduce the fields radiated by a circularly polarized helical beam antenna designed at the frequency of 10GHz. The propagation of four different circularly polarized helical modes over a distance of 3 m has been studied using time-domain analysis with CFDTD and analytical models. Thanks to the great volume of the simulations, the properties of these beam have been delineated and compared with the linearly polarized helical beams. The design of the antenna and the beam-port was developed using the CFDTD method and a Titan-XP GPU.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"74 1","pages":"1557-1560"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90552739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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