Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541727
Dakotah J. Simpson, R. Gómez‐García, D. Psychogiou
This paper reports on the RF design of mixed-technology quasi-reflectionless planar bandpass filters (BPFs). They are based on a hybrid integration scheme in which microstrip resonators are effectively combined with lumped-element ones for size compactness. By loading the input and output ports of a first-order BPF with first-order bandstop-filter (BSF) sections that exhibit complementary transfer function with regard to the BPF one, a symmetric quasi-reflectionless behaviour can be obtained at both accesses of the overall filter. The first-order quasi-absorptive BPF cell can be extended to higher-rejection realizations by cascading in series multiple first-order stages and merging their interconnecting BSF sections. For experimental-validation purposes, two quasi-absorptive BPF prototypes (one-and two-stage schemes, respectively) centred at 2 GHz were designed., manufactured., and measured. They exhibit return-loss (RL) levels higher than 10 dB over fractional bandwidths (FBW s) of 117% and 111%, respectively.
{"title":"Mixed-Technology Quasi-Reflectionless Planar Bandpass Filters","authors":"Dakotah J. Simpson, R. Gómez‐García, D. Psychogiou","doi":"10.23919/EUMC.2018.8541727","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541727","url":null,"abstract":"This paper reports on the RF design of mixed-technology quasi-reflectionless planar bandpass filters (BPFs). They are based on a hybrid integration scheme in which microstrip resonators are effectively combined with lumped-element ones for size compactness. By loading the input and output ports of a first-order BPF with first-order bandstop-filter (BSF) sections that exhibit complementary transfer function with regard to the BPF one, a symmetric quasi-reflectionless behaviour can be obtained at both accesses of the overall filter. The first-order quasi-absorptive BPF cell can be extended to higher-rejection realizations by cascading in series multiple first-order stages and merging their interconnecting BSF sections. For experimental-validation purposes, two quasi-absorptive BPF prototypes (one-and two-stage schemes, respectively) centred at 2 GHz were designed., manufactured., and measured. They exhibit return-loss (RL) levels higher than 10 dB over fractional bandwidths (FBW s) of 117% and 111%, respectively.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"11 1","pages":"551-554"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88670762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541387
Joao CarlosAzevedo Goncalves, I. Alaji, D. Gloria, V. Gidel, F. Gianesello, S. Lépilliet, G. Ducournau, F. Danneville, C. Gaquière
This paper describes millimetre wave (mmW) on-wafer power detection using dedicated high frequency diode junction with a cut-off frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed in order to develop fully integrated power detection for transistor or MMIC large signal characterisation on mmW frequency range above 110 GHz. The power detection is performed by biasing the diode in its forward regime. That allows us to obtain an adjustable voltage responsivity (ϒ) between 426 V/W and 3836 V/W at 320 GHz on the unmatched diode. In this configuration the corresponding dynamic range can be adjusted depending upon the configuration.
{"title":"On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization","authors":"Joao CarlosAzevedo Goncalves, I. Alaji, D. Gloria, V. Gidel, F. Gianesello, S. Lépilliet, G. Ducournau, F. Danneville, C. Gaquière","doi":"10.23919/EUMC.2018.8541387","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541387","url":null,"abstract":"This paper describes millimetre wave (mmW) on-wafer power detection using dedicated high frequency diode junction with a cut-off frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed in order to develop fully integrated power detection for transistor or MMIC large signal characterisation on mmW frequency range above 110 GHz. The power detection is performed by biasing the diode in its forward regime. That allows us to obtain an adjustable voltage responsivity (ϒ) between 426 V/W and 3836 V/W at 320 GHz on the unmatched diode. In this configuration the corresponding dynamic range can be adjusted depending upon the configuration.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"26 1","pages":"37-40"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79172349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541732
Faisal Ahmed, M. Furqan, A. Stelzer
In this paper, we present two broadband bowtie antennas working in D-Band (110GHz–170GHz) and J-Band (220 GHz–325 GHz) frequency range. Both antennas are designed in embedded wafer level ball grid array (eWLB) package from Infineon and are intended for high resolution radar applications. Achieving wideband performance in terms of return loss and antenna gain at millimeter and sub-millimeter-wave frequencies is a major challenge in an eWLB package because of the relative thickness and size of the package with respect to the operating frequency. This leads to unwanted surface currents and parasitic radiations from the sidewalls of the package. In order to alleviate this problem the antennas and the size of the package are co-designed. Measurements of the D-band and J-band antennas show a 3-dB gain bandwidth from 107 GHz–130 GHz and 227–252GHz while demonstrating a peak gain of around 6 dBi and 4 dBi, respectively. These antennas demonstrate that achieving wideband performance in an eWLB system-in-package is not only feasible but offers a highly attractive and robust solution for current and future radar applications.
{"title":"120-GHz and 240-GHz Broadband Bow-Tie Antennas in eWLB Package for High Resolution Radar Applications","authors":"Faisal Ahmed, M. Furqan, A. Stelzer","doi":"10.23919/EUMC.2018.8541732","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541732","url":null,"abstract":"In this paper, we present two broadband bowtie antennas working in D-Band (110GHz–170GHz) and J-Band (220 GHz–325 GHz) frequency range. Both antennas are designed in embedded wafer level ball grid array (eWLB) package from Infineon and are intended for high resolution radar applications. Achieving wideband performance in terms of return loss and antenna gain at millimeter and sub-millimeter-wave frequencies is a major challenge in an eWLB package because of the relative thickness and size of the package with respect to the operating frequency. This leads to unwanted surface currents and parasitic radiations from the sidewalls of the package. In order to alleviate this problem the antennas and the size of the package are co-designed. Measurements of the D-band and J-band antennas show a 3-dB gain bandwidth from 107 GHz–130 GHz and 227–252GHz while demonstrating a peak gain of around 6 dBi and 4 dBi, respectively. These antennas demonstrate that achieving wideband performance in an eWLB system-in-package is not only feasible but offers a highly attractive and robust solution for current and future radar applications.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"95 1","pages":"1109-1112"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76506738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541444
G. Chaudhary, Phanam Pech, P. Kim, Y. Jeong
This paper presents a design of arbitrarily terminated coupler with tunable negative group delay (NGD) response and power division ratio. The proposed coupler provides tunable NGD through port 3 and 1 whereas positive group delay (PGD) through port 2 and 1. The analytical analysis shows that the power division ratio and NGD are controlled by a junction resistance of parasitic compensated PIN diode. Perfect matching and infinite isolation are obtained at the center frequency $(pmb{f}_{mathbf{0}})$. The proposed coupler is validated by fabricating circuit at $pmb{f}_{mathbf{0}}=mathbf{2.14}$ GHz. Measurement results are well agreed with simulated and predicted results. The experimental results show that NGD is varied from −0.2 to −1.3 ns with NGD fractional bandwidth (bandwidth of $mathbf{GD} < mathbf{0}$) of 21.14 % to 15.88%.
{"title":"Arbitrary Terminated Coupler with Tunable Negative and Positive Group Delay Responses","authors":"G. Chaudhary, Phanam Pech, P. Kim, Y. Jeong","doi":"10.23919/EUMC.2018.8541444","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541444","url":null,"abstract":"This paper presents a design of arbitrarily terminated coupler with tunable negative group delay (NGD) response and power division ratio. The proposed coupler provides tunable NGD through port 3 and 1 whereas positive group delay (PGD) through port 2 and 1. The analytical analysis shows that the power division ratio and NGD are controlled by a junction resistance of parasitic compensated PIN diode. Perfect matching and infinite isolation are obtained at the center frequency $(pmb{f}_{mathbf{0}})$. The proposed coupler is validated by fabricating circuit at $pmb{f}_{mathbf{0}}=mathbf{2.14}$ GHz. Measurement results are well agreed with simulated and predicted results. The experimental results show that NGD is varied from −0.2 to −1.3 ns with NGD fractional bandwidth (bandwidth of $mathbf{GD} < mathbf{0}$) of 21.14 % to 15.88%.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"45 1","pages":"57-60"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81449220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541781
B. Rougier, H. Aubert, A. Lefrançois
A millimeter-wave remote sensing technique is used here as a noninvasive and continuous approach for the real-time measurement of shock wave velocity as well as the velocity of the shocked dielectric material during an impact. Experimental results obtained from planar symmetric impacts on PolyMethyl MethAcrylate (PMMA) cylinders are discussed and demonstrate that the proposed millimeter-wave remote sensing technique is highly convenient for deriving both the velocity of the shock wave and velocity of the shocked PMMA material. The proposed approach is applicable to any dielectric material subject to an impact and is an excellent candidate for deriving the equation of state of shocked materials.
{"title":"Measurement of Shock Wave and Particle Velocities in Shocked Dielectric Material from Millimeter-Wave Remote Sensing","authors":"B. Rougier, H. Aubert, A. Lefrançois","doi":"10.23919/EUMC.2018.8541781","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541781","url":null,"abstract":"A millimeter-wave remote sensing technique is used here as a noninvasive and continuous approach for the real-time measurement of shock wave velocity as well as the velocity of the shocked dielectric material during an impact. Experimental results obtained from planar symmetric impacts on PolyMethyl MethAcrylate (PMMA) cylinders are discussed and demonstrate that the proposed millimeter-wave remote sensing technique is highly convenient for deriving both the velocity of the shock wave and velocity of the shocked PMMA material. The proposed approach is applicable to any dielectric material subject to an impact and is an excellent candidate for deriving the equation of state of shocked materials.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"21 1","pages":"855-858"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83524569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMIC.2018.8539928
Çağdaş Yağbasan, Ahmet Aktuğ
In this paper, design and measurement of X-Band monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNA) using a commercial 0.25 um microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology are reported. Using a novel active limiting approach in measurements, lower than 1.75 dB noise figure (NF) and higher than 16 W CW input power survivability is obtained from a single chip. To the best of authors' knowledge, said LNA has the highest input power handling performance for the given noise figure level although transistors are not optimized for low-noise operation and input matching network is realized to compromise between noise figure and input return loss which is better than 10 dB. Results are promising for single chip GaN frontend transceiver architecture realization.
{"title":"Robust X-Band GaN LNA with Integrated Active Limiter","authors":"Çağdaş Yağbasan, Ahmet Aktuğ","doi":"10.23919/EUMIC.2018.8539928","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539928","url":null,"abstract":"In this paper, design and measurement of X-Band monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNA) using a commercial 0.25 um microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology are reported. Using a novel active limiting approach in measurements, lower than 1.75 dB noise figure (NF) and higher than 16 W CW input power survivability is obtained from a single chip. To the best of authors' knowledge, said LNA has the highest input power handling performance for the given noise figure level although transistors are not optimized for low-noise operation and input matching network is realized to compromise between noise figure and input return loss which is better than 10 dB. Results are promising for single chip GaN frontend transceiver architecture realization.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"114 1","pages":"1205-1208"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79921416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541711
A. Abdalrazik, A. Abdelrahman, A. Allam, M. Abo-Zahhad
In this paper, we propose a wideband antenna that consists of two closely separated dielectric resonator antennas (DRAs), and fed by a microstrip antenna, for 5G applications. The dimensions of the two DRAs are designed such that they resonate at two close and contiguous resonance frequencies to enhance the antenna bandwidth. Moreover, a truncation in the ground has been proposed such that the feeding microstrip antenna attains a third resonance frequency that is close to the resonances of the two DRAs. As such, the three resonance frequencies form a wide contiguous bandwidth of 12-24GHz, with fractional bandwidth of 66%, at center frequency of 18GHz. Furthermore, the utilization of the two closely separated DRA elements enhances the gain of the antenna as they act as antenna array elements, whereas there is only one feeding port, which simplifies the antenna structure. The DRAs widths and lengths are 2 by 2mm and 5 by 1mm, respectively, and the height of both of them is 5.7mm. The gain of the antenna ranges from 4 to 8dBi over the operating bandwidth. The antenna is fabricated and good agreement is attained between measured and simulated results.
{"title":"A Wideband Dielectric Resonator Antenna with Truncated Ground for 5G Applications","authors":"A. Abdalrazik, A. Abdelrahman, A. Allam, M. Abo-Zahhad","doi":"10.23919/EUMC.2018.8541711","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541711","url":null,"abstract":"In this paper, we propose a wideband antenna that consists of two closely separated dielectric resonator antennas (DRAs), and fed by a microstrip antenna, for 5G applications. The dimensions of the two DRAs are designed such that they resonate at two close and contiguous resonance frequencies to enhance the antenna bandwidth. Moreover, a truncation in the ground has been proposed such that the feeding microstrip antenna attains a third resonance frequency that is close to the resonances of the two DRAs. As such, the three resonance frequencies form a wide contiguous bandwidth of 12-24GHz, with fractional bandwidth of 66%, at center frequency of 18GHz. Furthermore, the utilization of the two closely separated DRA elements enhances the gain of the antenna as they act as antenna array elements, whereas there is only one feeding port, which simplifies the antenna structure. The DRAs widths and lengths are 2 by 2mm and 5 by 1mm, respectively, and the height of both of them is 5.7mm. The gain of the antenna ranges from 4 to 8dBi over the operating bandwidth. The antenna is fabricated and good agreement is attained between measured and simulated results.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"25 1","pages":"1085-1088"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88376334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541555
K. Arkhypova, Fedir Folokh, V. Lychko, P. Krasov, A. Fisun, V. Malakhov
The present work is a continuation of our multidisciplinary study on optimizing therapy in patients with chronic neurological conditions. Here we aim to monitor the efficiency of antihypertensive treatment via microwave blood sensing technique. The concept of microwave sensing is based on in vitro detecting drug-induced dielectric response $(Deltavarepsilon^{*})$ of erythrocytes. This response is closely tied to a membrane adrenergic activity exhibiting individual peculiarities of the stress system, which varies significantly depending on a patient's health status and stage of the disease. That is why its evaluation during the course of treatment is of great importance for appropriate medication therapy (in particular, with prescribing antihypertensive drugs) as well as for the monitoring treatment efficiency. The study of these drug-induced effects in blood samples has been carried out using a complex of physical and biochemical methods. Microwave dielectric observations were performed as the repeated permittivity measurements of blood samples with a single-frequency waveguide-based reflectometry (39.5 GHz). To validate the results of the dielectric study we opted for a biochemical technique which allows evaluating the adrenergic effect of a pharmaceutical agent to erythrocytes. Both techniques have revealed well-correlated data which indicate the successful applicability of such an approach when considering the adrenergic status of a patient in antihypertensive treatment. Previously reported data supplemented by new findings are presented. The results would be helpful for the specialists dealing with microwave measurements of blood and the developers of clinically-oriented microwave systems.
{"title":"Microwave Blood Sensing for Monitoring Treatment Efficiency in Hypertensive Patients with Chronic Neurological Disorders","authors":"K. Arkhypova, Fedir Folokh, V. Lychko, P. Krasov, A. Fisun, V. Malakhov","doi":"10.23919/EUMC.2018.8541555","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541555","url":null,"abstract":"The present work is a continuation of our multidisciplinary study on optimizing therapy in patients with chronic neurological conditions. Here we aim to monitor the efficiency of antihypertensive treatment via microwave blood sensing technique. The concept of microwave sensing is based on in vitro detecting drug-induced dielectric response $(Deltavarepsilon^{*})$ of erythrocytes. This response is closely tied to a membrane adrenergic activity exhibiting individual peculiarities of the stress system, which varies significantly depending on a patient's health status and stage of the disease. That is why its evaluation during the course of treatment is of great importance for appropriate medication therapy (in particular, with prescribing antihypertensive drugs) as well as for the monitoring treatment efficiency. The study of these drug-induced effects in blood samples has been carried out using a complex of physical and biochemical methods. Microwave dielectric observations were performed as the repeated permittivity measurements of blood samples with a single-frequency waveguide-based reflectometry (39.5 GHz). To validate the results of the dielectric study we opted for a biochemical technique which allows evaluating the adrenergic effect of a pharmaceutical agent to erythrocytes. Both techniques have revealed well-correlated data which indicate the successful applicability of such an approach when considering the adrenergic status of a patient in antihypertensive treatment. Previously reported data supplemented by new findings are presented. The results would be helpful for the specialists dealing with microwave measurements of blood and the developers of clinically-oriented microwave systems.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"34 1","pages":"507-510"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88455265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541419
Vincenzo Lombardi, M. Bozzi, L. Perregrini
This paper presents for the first time the implementation of the variational meshless method for the solution of a 2D vector field equation. The meshless method based on radial basis functions is combined with the variational principle and applied to the analysis of a rectangular waveguide filled with an inhomogeneous material. The minimization of the functional involving the magnetic field allows for the determination of the dispersion diagram of the structure, leading to the calculation of a large number of propagating modes with a limited number of unknowns and in a very short computation time. The numerical examples shows the effectiveness of the proposed numerical technique.
{"title":"Analysis of Inhomogeneous Rectangular Waveguides by the Variational Meshless Method","authors":"Vincenzo Lombardi, M. Bozzi, L. Perregrini","doi":"10.23919/EUMC.2018.8541419","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541419","url":null,"abstract":"This paper presents for the first time the implementation of the variational meshless method for the solution of a 2D vector field equation. The meshless method based on radial basis functions is combined with the variational principle and applied to the analysis of a rectangular waveguide filled with an inhomogeneous material. The minimization of the functional involving the magnetic field allows for the determination of the dispersion diagram of the structure, leading to the calculation of a large number of propagating modes with a limited number of unknowns and in a very short computation time. The numerical examples shows the effectiveness of the proposed numerical technique.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"185 1","pages":"452-455"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90562785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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