Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428267
M. F. Hossain, Puspita Paul, T. Takahashi
The aim of this work is to deposit nanocrystalline TiO2 films by DC reactive facing-target sputtering (FTS) technique. The TiO2 films have been deposited in Fluorine doped tin-oxide (FTO) glass substrate by FTS with sputtering pressure of 2.0 Pa, and Ar/O2 gas ratio of 7:3. The main attraction of this paper is to correlate the structural, optical and morphological properties of these prepared TiO2 film with variation of deposition time (like 2, 4 and 12 hrs). The thickness of TiO2 film increases with the increase of deposition time. The correlation between the thickness variance and the structural, optical and morphological properties of TiO2 thin films has been investigated in details. From the results, it is cleared that the crystallinity, grain size and surface roughness enhance but cluster size reduces with the increase of deposition time. These prepared films have chanced to apply directly for dye-sensitized solar cell, photoelectrochemical cell and water splitting applications.
{"title":"Effect of deposition time on structural, optical and morphological properties of facing-target sputtered TiO2 thin film","authors":"M. F. Hossain, Puspita Paul, T. Takahashi","doi":"10.1109/CEEE.2015.7428267","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428267","url":null,"abstract":"The aim of this work is to deposit nanocrystalline TiO2 films by DC reactive facing-target sputtering (FTS) technique. The TiO2 films have been deposited in Fluorine doped tin-oxide (FTO) glass substrate by FTS with sputtering pressure of 2.0 Pa, and Ar/O2 gas ratio of 7:3. The main attraction of this paper is to correlate the structural, optical and morphological properties of these prepared TiO2 film with variation of deposition time (like 2, 4 and 12 hrs). The thickness of TiO2 film increases with the increase of deposition time. The correlation between the thickness variance and the structural, optical and morphological properties of TiO2 thin films has been investigated in details. From the results, it is cleared that the crystallinity, grain size and surface roughness enhance but cluster size reduces with the increase of deposition time. These prepared films have chanced to apply directly for dye-sensitized solar cell, photoelectrochemical cell and water splitting applications.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"51 1","pages":"241-244"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88286486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428225
M. M. Islam, Aminul Islam, S. M. Shaikh, M. Sheikh
This paper presents Permanent Magnet Synchronous generator (PMSG) based a variable speed wind turbine systems including energy capacitor system (ECS). The ECS is the combination of electric double layer capacitor (EDLC) known as supercapacitor and power electronic devices for wind power application with its detailed modeling and control strategy which can supply smooth electrical power to the power grid and makes the system better stable and reliable. As generated power from wind fluctuates randomly, the objective of this control system is to select a line power reference level and to follow the reference level by absorbing or providing active power to or from ECS to smooth output power fluctuation penetrated to the grid and to keep the wind farm terminal voltage at a desired level by supplying necessary reactive power. The performance of the proposed system is investigated by simulation analysis using PSCAD/EMTDC software.
{"title":"Stability enhancement of wind power system by using energy capacitor system","authors":"M. M. Islam, Aminul Islam, S. M. Shaikh, M. Sheikh","doi":"10.1109/CEEE.2015.7428225","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428225","url":null,"abstract":"This paper presents Permanent Magnet Synchronous generator (PMSG) based a variable speed wind turbine systems including energy capacitor system (ECS). The ECS is the combination of electric double layer capacitor (EDLC) known as supercapacitor and power electronic devices for wind power application with its detailed modeling and control strategy which can supply smooth electrical power to the power grid and makes the system better stable and reliable. As generated power from wind fluctuates randomly, the objective of this control system is to select a line power reference level and to follow the reference level by absorbing or providing active power to or from ECS to smooth output power fluctuation penetrated to the grid and to keep the wind farm terminal voltage at a desired level by supplying necessary reactive power. The performance of the proposed system is investigated by simulation analysis using PSCAD/EMTDC software.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"50 1","pages":"85-88"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91431342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428285
Md Raqibull Hasan, Mir Mehedi Al-Hasnat, M. Saiful Islam, Shahanara Akter
In this paper, the performance of InxGa1-xAs/GaAs quantum well (QW) solar cell along with graded InxGa1-xAsQW and GaAs homojunction solar cell has been investigated on the basis of incident light wavelength. In addition, two important performance parameters (open circuit voltage (Voc) and short circuit current (Jsc)) have been demonstrated with the variation of indium composition in QW region. The results reveal that, the performance of InxGa1-xAs QW solar cell strongly depends on indium composition and wavelength of incident light. Moreover, it is noticed that GaAs homojunction solar cell is more favorable for shorter wavelength (smaller or equal to 400nm) and shows 41.5% power conversion efficiency but external quantum efficiency (E.Q.E.) is only 10%. Furthermore, InxGa1-xAs graded QW solar cell is best approach for longer wavelength ( greater or equal to 1000nm) and the optimum efficiency has been obtained about 35.47%. However, the Jsc has been improved with the insertion of QW in intrinsic region but Voc and fill factor (FF) slightly reduced compared to homojunction solar cell. Finally, the open circuit voltage and fill factor have been further improved by using average 18% indium content of InxGa1-xAs graded QW solar cell.
{"title":"Performance investigation of InxGa1−xAs/GaAs QW and GaAs homojunction solar cell","authors":"Md Raqibull Hasan, Mir Mehedi Al-Hasnat, M. Saiful Islam, Shahanara Akter","doi":"10.1109/CEEE.2015.7428285","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428285","url":null,"abstract":"In this paper, the performance of InxGa1-xAs/GaAs quantum well (QW) solar cell along with graded InxGa1-xAsQW and GaAs homojunction solar cell has been investigated on the basis of incident light wavelength. In addition, two important performance parameters (open circuit voltage (Voc) and short circuit current (Jsc)) have been demonstrated with the variation of indium composition in QW region. The results reveal that, the performance of InxGa1-xAs QW solar cell strongly depends on indium composition and wavelength of incident light. Moreover, it is noticed that GaAs homojunction solar cell is more favorable for shorter wavelength (smaller or equal to 400nm) and shows 41.5% power conversion efficiency but external quantum efficiency (E.Q.E.) is only 10%. Furthermore, InxGa1-xAs graded QW solar cell is best approach for longer wavelength ( greater or equal to 1000nm) and the optimum efficiency has been obtained about 35.47%. However, the Jsc has been improved with the insertion of QW in intrinsic region but Voc and fill factor (FF) slightly reduced compared to homojunction solar cell. Finally, the open circuit voltage and fill factor have been further improved by using average 18% indium content of InxGa1-xAs graded QW solar cell.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"249 1","pages":"37-40"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75080032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428244
S. Tabassum, E. Yamasue, H. Okumura, K. Ishihara
Al doped ZnO is the most promising candidate for transparent electrode, because it possesses an outstanding opto-electrical property. Electrical stability of transparent electrode in harsh environment is an important factor for devices, especially for solar cell, since the increase of TCO resistance will lead to degradation of device performance. The electrical stability of AZO is not satisfactory till now because of oxidization. In this experiment, AZO film was co-doped with less reactive (silver, nickel) and high reactive (calcium) material in oxygen and electrical stability was investigated in ambient condition for 30 days. Structural, optical and electrical properties are also characterized.
{"title":"Synthesis and environmental stability of silver, nickel and calcium co-doped AZO transparent electrode","authors":"S. Tabassum, E. Yamasue, H. Okumura, K. Ishihara","doi":"10.1109/CEEE.2015.7428244","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428244","url":null,"abstract":"Al doped ZnO is the most promising candidate for transparent electrode, because it possesses an outstanding opto-electrical property. Electrical stability of transparent electrode in harsh environment is an important factor for devices, especially for solar cell, since the increase of TCO resistance will lead to degradation of device performance. The electrical stability of AZO is not satisfactory till now because of oxidization. In this experiment, AZO film was co-doped with less reactive (silver, nickel) and high reactive (calcium) material in oxygen and electrical stability was investigated in ambient condition for 30 days. Structural, optical and electrical properties are also characterized.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"32 1","pages":"157-160"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86130035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428235
Kamatol Hasnat Sara, M. Islam, Md Rasedujjaman
In this work, a theoretical study on different characteristics of AlInGaN/InGaN heterostructures for enhancing the device performance has been presented. The calculation of two dimensional electron gas sheet charge density of AlGaInN /InGaN heterostuctures has been carried out. The effect of spontaneous and piezoelectric polarization has been observed. Polarization has been simulated with the variation of mole fraction. It has been observed that with the increment of the mole fraction Indium element and the decrement of the mole fraction of Aluminium element, the total polarization increases. With the incorporation of Indium and associated changes of the Built-in strain in AlInGaN/InGaN heterostructures have detrimental effect on the transport properties two dimensional electron gas at the hetero interface.
{"title":"Characteristics of quaternary AlxInyGa(1−x−y)N/ InGaN heterostructure varying the composition of aluminium and indium","authors":"Kamatol Hasnat Sara, M. Islam, Md Rasedujjaman","doi":"10.1109/CEEE.2015.7428235","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428235","url":null,"abstract":"In this work, a theoretical study on different characteristics of AlInGaN/InGaN heterostructures for enhancing the device performance has been presented. The calculation of two dimensional electron gas sheet charge density of AlGaInN /InGaN heterostuctures has been carried out. The effect of spontaneous and piezoelectric polarization has been observed. Polarization has been simulated with the variation of mole fraction. It has been observed that with the increment of the mole fraction Indium element and the decrement of the mole fraction of Aluminium element, the total polarization increases. With the incorporation of Indium and associated changes of the Built-in strain in AlInGaN/InGaN heterostructures have detrimental effect on the transport properties two dimensional electron gas at the hetero interface.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"25 1","pages":"125-128"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88359004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428295
Md Samiur Rahman, S. Waheed, A. Bahar
Reversible logic has comprehensive applications in communications, quantum computing, low power VLSI design, computer graphics, cryptography, nanotechnology and optical computing. It has received significant attention in low power dissipating circuit design in the past few years. While several researchers have inspected the design of reversible logic units, there is not much reported works on reversible subtractors. In this paper we proposed the quantum equivalent circuit for SRG (SRG refers to Samiur Rahman Gate) gate and we have computed the quantum cost of SRG gate. We also showed that how SRG gate can work singly as a Full-subtractor circuit. It is being tried to design the circuit optimal in terms of number of reversible gates, number of garbage outputs, number of constant inputs and quantum cost with compared to the existing circuits. All the designs have nanometric scales.
{"title":"Optimized design of full-subtractor using new SRG reversible logic gates and VHDL simulation","authors":"Md Samiur Rahman, S. Waheed, A. Bahar","doi":"10.1109/CEEE.2015.7428295","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428295","url":null,"abstract":"Reversible logic has comprehensive applications in communications, quantum computing, low power VLSI design, computer graphics, cryptography, nanotechnology and optical computing. It has received significant attention in low power dissipating circuit design in the past few years. While several researchers have inspected the design of reversible logic units, there is not much reported works on reversible subtractors. In this paper we proposed the quantum equivalent circuit for SRG (SRG refers to Samiur Rahman Gate) gate and we have computed the quantum cost of SRG gate. We also showed that how SRG gate can work singly as a Full-subtractor circuit. It is being tried to design the circuit optimal in terms of number of reversible gates, number of garbage outputs, number of constant inputs and quantum cost with compared to the existing circuits. All the designs have nanometric scales.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"12 1","pages":"69-72"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78605181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428240
Ibnul Feraji Alam, N. Farhana, M. A. Basher
With the increasing demand for high frequency oscillator, low cost CMOS circuit is of crying need. Periodic steady state behavior of cross-coupled LC tank is important as it helps to get oscillation in ultra-low power, low voltage. This study is about evaluating the amplitude of main component, oscillation frequency, non-linear behavior of oscillator, and power consumption of LC-tank VCO. The proposed topology is demonstrated through a fully integrated LC VCO implemented in the 0.18μm CMOS process. A discussion about transistor size, capacitor and inductor value and their effect on oscillation is evaluated in the proposed topology.
{"title":"Analytical model design for LC-tank VCO in 0.18µm CMOS","authors":"Ibnul Feraji Alam, N. Farhana, M. A. Basher","doi":"10.1109/CEEE.2015.7428240","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428240","url":null,"abstract":"With the increasing demand for high frequency oscillator, low cost CMOS circuit is of crying need. Periodic steady state behavior of cross-coupled LC tank is important as it helps to get oscillation in ultra-low power, low voltage. This study is about evaluating the amplitude of main component, oscillation frequency, non-linear behavior of oscillator, and power consumption of LC-tank VCO. The proposed topology is demonstrated through a fully integrated LC VCO implemented in the 0.18μm CMOS process. A discussion about transistor size, capacitor and inductor value and their effect on oscillation is evaluated in the proposed topology.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"11 1","pages":"141-144"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85725435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428281
Asif Hassan, N. Hossain
Graphene nanoribbons (GNRs) are considered as a prospective material for next generation nanoelectroic devices as well as optoelectronic devices. In previous literature, it is seen that, armchair GNRs (AGNRs) are always show semiconductor behavior due to considerable band gap. Along with this, excitation of photon to a doped GNRs create an electron hole charged pair. This kind of mechanism is an important phenomenon in solar cell, optoelectronics, and electronics devices and so on. In this paper, we will observe the polaron in A-GNR through a rate which is named as dissociation rate (creation of free charge carriers) depending upon some electronics properties like mobility, bandgap energy, carrier concentration, mobility. After that, we will observe the polaron dissociation rate for different width of AGNR.
{"title":"Polaron dissociation rate in armchair graphene nanoribbon","authors":"Asif Hassan, N. Hossain","doi":"10.1109/CEEE.2015.7428281","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428281","url":null,"abstract":"Graphene nanoribbons (GNRs) are considered as a prospective material for next generation nanoelectroic devices as well as optoelectronic devices. In previous literature, it is seen that, armchair GNRs (AGNRs) are always show semiconductor behavior due to considerable band gap. Along with this, excitation of photon to a doped GNRs create an electron hole charged pair. This kind of mechanism is an important phenomenon in solar cell, optoelectronics, and electronics devices and so on. In this paper, we will observe the polaron in A-GNR through a rate which is named as dissociation rate (creation of free charge carriers) depending upon some electronics properties like mobility, bandgap energy, carrier concentration, mobility. After that, we will observe the polaron dissociation rate for different width of AGNR.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"1 1","pages":"21-24"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89639140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428269
M. Jafari, Md. Rabiul Islam, Z. Malekjamshidi, Jianguo Zhu
Recent improvements in magnetic material characteristics and switching device increased the possibility of replacing electrical buses with high-frequency magnetic-links in micro-grids. Multi-winding transformers (MWTs) provide a common magnetic bus for integrating renewable energies in the form of magnetic flux. Their application in multi-port converter makes it possible to simply integrate the sources with different voltage levels adjusting winding turn ratios. Other advantages are galvanic isolation, bidirectional power flow capability and simultaneous power transfer among the ports. Despite the above positive points modeling and characterization of MWTs is relatively complex due to the cross coupling and nonlinearity effects. This paper describes the experimental test procedures carried out on a toroidal core MWT to extract the parameters and to find the equivalent electrical model. Both prototype and resulted model are tested under different load conditions and are compared to verify the validity of modeling process.
{"title":"Modeling of multi-winding high-frequency transformers as a common magnetic-link in smart micro-grids","authors":"M. Jafari, Md. Rabiul Islam, Z. Malekjamshidi, Jianguo Zhu","doi":"10.1109/CEEE.2015.7428269","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428269","url":null,"abstract":"Recent improvements in magnetic material characteristics and switching device increased the possibility of replacing electrical buses with high-frequency magnetic-links in micro-grids. Multi-winding transformers (MWTs) provide a common magnetic bus for integrating renewable energies in the form of magnetic flux. Their application in multi-port converter makes it possible to simply integrate the sources with different voltage levels adjusting winding turn ratios. Other advantages are galvanic isolation, bidirectional power flow capability and simultaneous power transfer among the ports. Despite the above positive points modeling and characterization of MWTs is relatively complex due to the cross coupling and nonlinearity effects. This paper describes the experimental test procedures carried out on a toroidal core MWT to extract the parameters and to find the equivalent electrical model. Both prototype and resulted model are tested under different load conditions and are compared to verify the validity of modeling process.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"44 1","pages":"249-252"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84800110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/CEEE.2015.7428228
Md. Moshiur Rahman, Muhammad Sajjadur Rahim, Md Nur Al Safa Bhuiyan, Sabbir Ahmed
Reduction of high Peak-to-Average Power Ratio (PAPR) is a very important issue in Orthogonal Frequency Division Multiplexing (OFDM) system. In this contribution, we propose a new phase sequence that can be used in Selective Mapping (SLM) technique; a well known PAPR reduction method. Generated from Greatest Common Divisor (GCD) Matrix, we show that our proposed phase sequence possesses better PAPR reduction capability compared to the Bauml sequence often used in SLM technique. From simulation results, we demonstrate that the proposed sequence achieves 3.2 dB higher PAPR reduction compared to SLM method with Bauml sequence and also reduces the computational overhead about 65 percent.
{"title":"Greatest common divisor matrix based phase sequence for PAPR reduction in OFDM system with low computational overhead","authors":"Md. Moshiur Rahman, Muhammad Sajjadur Rahim, Md Nur Al Safa Bhuiyan, Sabbir Ahmed","doi":"10.1109/CEEE.2015.7428228","DOIUrl":"https://doi.org/10.1109/CEEE.2015.7428228","url":null,"abstract":"Reduction of high Peak-to-Average Power Ratio (PAPR) is a very important issue in Orthogonal Frequency Division Multiplexing (OFDM) system. In this contribution, we propose a new phase sequence that can be used in Selective Mapping (SLM) technique; a well known PAPR reduction method. Generated from Greatest Common Divisor (GCD) Matrix, we show that our proposed phase sequence possesses better PAPR reduction capability compared to the Bauml sequence often used in SLM technique. From simulation results, we demonstrate that the proposed sequence achieves 3.2 dB higher PAPR reduction compared to SLM method with Bauml sequence and also reduces the computational overhead about 65 percent.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"1 1","pages":"97-100"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89947406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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