Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8548021
Chun-Ping Lin, Kuo-Yi Yen, Jun-Rui Huang, Sean H. T. Chen
The regeneration process is a method for boronoxygen defects passivation by using heat and illumination, and its benefits have been demonstrated for efficiently reducing light induced degradation (LID) on P-type cells. It is widely used for solving LID issue on p-type PERC cells in recent year. In this paper, post-heating was used to understand the thermal influence on regenerated cells. Comparison between cell with and without regeneration process, the post-heating caused extra LID (2%) in regenerated cells is much higher than that (0.5%) in as-fired cells. The difference of extra LID between as-fired and regenerated cells indicates that the post-heating results in defect state transition from regenerated state to annealed state in regenerated cells. Based on this phenomenon, the LID test must take the impact of latent heat after regeneration process such as subsequent module process into consideration. Therefore, the regeneration process windows of temperature and light intensity need to be redefined when post-heating is introduced after regeneration process. The result of process window redefinition shows that the regeneration conditions of 1.4C suns light intensity can reduce the post-heating caused extra LID about 0.8% as compared with the regeneration conditions of 1C suns light intensity, and LID has no significant change as temperature of regeneration condition in a range from 225 °C to 275 °C. Additionally, cells with regeneration condition of 175 °C have low as regenerated efficiency, and the LID of cells with regeneration treatment at 300 °C is higher than that of cells treated with lower temperatures.
{"title":"Reduction of Thermal Caused Extra Light Induced Degradation by Redefined Regeneration Conditions","authors":"Chun-Ping Lin, Kuo-Yi Yen, Jun-Rui Huang, Sean H. T. Chen","doi":"10.1109/PVSC.2018.8548021","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8548021","url":null,"abstract":"The regeneration process is a method for boronoxygen defects passivation by using heat and illumination, and its benefits have been demonstrated for efficiently reducing light induced degradation (LID) on P-type cells. It is widely used for solving LID issue on p-type PERC cells in recent year. In this paper, post-heating was used to understand the thermal influence on regenerated cells. Comparison between cell with and without regeneration process, the post-heating caused extra LID (2%) in regenerated cells is much higher than that (0.5%) in as-fired cells. The difference of extra LID between as-fired and regenerated cells indicates that the post-heating results in defect state transition from regenerated state to annealed state in regenerated cells. Based on this phenomenon, the LID test must take the impact of latent heat after regeneration process such as subsequent module process into consideration. Therefore, the regeneration process windows of temperature and light intensity need to be redefined when post-heating is introduced after regeneration process. The result of process window redefinition shows that the regeneration conditions of 1.4C suns light intensity can reduce the post-heating caused extra LID about 0.8% as compared with the regeneration conditions of 1C suns light intensity, and LID has no significant change as temperature of regeneration condition in a range from 225 °C to 275 °C. Additionally, cells with regeneration condition of 175 °C have low as regenerated efficiency, and the LID of cells with regeneration treatment at 300 °C is higher than that of cells treated with lower temperatures.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"9 1","pages":"2655-2657"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85713533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547479
A. Bernard, Ricci la Centra, Eric Argentieri, Ryan S. Eriksen, S. Garner, M. Horenstein, M. Mazumder
Silver nanowire (AgNW) electrodes of the Electrodynamic Screen (EDS) aim at restoring the output power lost due to soiling and ensure minimal loss in transmission efficiency when retrofitted on the PV modules. Experiments are done to improve the robustness of electrodes by incorporating zinc oxide (ZnO) layers in electrode structure. Alternatively, the use of a protective clear polymer overcoat over the entire design aims to increase the stability and durability of the silver nanowires in the electrodes. Hybrid ink is also developed by using silver nanospheres to increase conductivity of electrodes. New designs of electrode geometry and structure to increase efficiency of EDS operation are discussed.
{"title":"Optimization of Optical Performance and Dust Removal Efficiency of Electrodynamic Screen (EDS) Films for Improving Energy-Yield of Solar Collectors","authors":"A. Bernard, Ricci la Centra, Eric Argentieri, Ryan S. Eriksen, S. Garner, M. Horenstein, M. Mazumder","doi":"10.1109/PVSC.2018.8547479","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547479","url":null,"abstract":"Silver nanowire (AgNW) electrodes of the Electrodynamic Screen (EDS) aim at restoring the output power lost due to soiling and ensure minimal loss in transmission efficiency when retrofitted on the PV modules. Experiments are done to improve the robustness of electrodes by incorporating zinc oxide (ZnO) layers in electrode structure. Alternatively, the use of a protective clear polymer overcoat over the entire design aims to increase the stability and durability of the silver nanowires in the electrodes. Hybrid ink is also developed by using silver nanospheres to increase conductivity of electrodes. New designs of electrode geometry and structure to increase efficiency of EDS operation are discussed.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"66 1","pages":"3451-3454"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85823104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547290
Arnaud Morlier, M. Siebert, I. Kunze, S. Blankemeyer, M. Köntges
The potential of ultraviolet (UV) fluorescence as a field technique for photovoltaic module defect detection was demonstrated recently. Here we study the formation rate of the fluorophores in module encapsulating material under UV illumination. We observe a correlation between the decrease in visible light transmission of the encapsulant and UV fluorescence intensity. This correlation allows estimating the yellowing-induced power loss via fluorescence measurements.
{"title":"Ultraviolet fluorescence of ethylene-vinyl acetate in photovoltaic modules as estimation tool for yellowing and power loss","authors":"Arnaud Morlier, M. Siebert, I. Kunze, S. Blankemeyer, M. Köntges","doi":"10.1109/PVSC.2018.8547290","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547290","url":null,"abstract":"The potential of ultraviolet (UV) fluorescence as a field technique for photovoltaic module defect detection was demonstrated recently. Here we study the formation rate of the fluorophores in module encapsulating material under UV illumination. We observe a correlation between the decrease in visible light transmission of the encapsulant and UV fluorescence intensity. This correlation allows estimating the yellowing-induced power loss via fluorescence measurements.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"15 1","pages":"1597-1602"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84137948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547434
Iskra Zafirovska, M. Juhl, T. Trupke
Luminescence inspection of modules is currently being adopted as a standard practice in the photovoltaic industry. This paper presents a comparison of electroluminescence and photoluminescence imaging on industrial crystalline silicon modules, employed with a line scan system. We find that specific defects appear differently in the two techniques due to the difference in excitation method. Line scan photoluminescence images enable differentiation of series resistance defects from recombination defects and can identify the presence of encapsulant discolouration. Line scan electroluminescence images allow defects that prevent majority carrier transport to be evaluated. The use of both techniques enables robust defect characterisation.
{"title":"Comparison of Line Scan Luminescence Imaging Techniques for Defect Characterisation in Crystalline Silicon Solar Modules","authors":"Iskra Zafirovska, M. Juhl, T. Trupke","doi":"10.1109/PVSC.2018.8547434","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547434","url":null,"abstract":"Luminescence inspection of modules is currently being adopted as a standard practice in the photovoltaic industry. This paper presents a comparison of electroluminescence and photoluminescence imaging on industrial crystalline silicon modules, employed with a line scan system. We find that specific defects appear differently in the two techniques due to the difference in excitation method. Line scan photoluminescence images enable differentiation of series resistance defects from recombination defects and can identify the presence of encapsulant discolouration. Line scan electroluminescence images allow defects that prevent majority carrier transport to be evaluated. The use of both techniques enables robust defect characterisation.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"1 1","pages":"1364-1369"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84176732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8548191
Supawan Joonwichien, Y. Kida, M. Moriya, S. Utsunomiya, K. Shirasawa, H. Takato
We demonstrate the improvement of phosphorus emitter passivation for an industrial-sized passivated emitter and rear cell (PERC) with selective emitter (SE) structure using a method of nitric acid oxidation of silicon (NAOS) to form ultrathin SiO2layer. The results clearly show a significant impact of the presence of NAOS-SiO2 above emitters on all I-V parameters of PERCsWe observed an increase in the opencircuit voltage (Voc), and theshort-circuit current density(Jsc) along with strong improvements in the internal quantum efficiency (IQE) for short-wavelength photons. These improvements can be ascribed to the high level of chemical passivation, as clearly shown by a reduced interface trap density (Dit), and it is due to the less Shockley-Read-Hall recombination. The results presented here suggest that NAOS surface pretreatment is a very promising technology to improve the level of chemical passivation and thereby enhancing the industrialsized PERC performance.
{"title":"Improved Phosphorus Emitter Passivation using Chemically Grown SiO2 Layer for Industrial-sized Selective Emitter PERC","authors":"Supawan Joonwichien, Y. Kida, M. Moriya, S. Utsunomiya, K. Shirasawa, H. Takato","doi":"10.1109/PVSC.2018.8548191","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8548191","url":null,"abstract":"We demonstrate the improvement of phosphorus emitter passivation for an industrial-sized passivated emitter and rear cell (PERC) with selective emitter (SE) structure using a method of nitric acid oxidation of silicon (NAOS) to form ultrathin SiO2layer. The results clearly show a significant impact of the presence of NAOS-SiO2 above emitters on all I-V parameters of PERCsWe observed an increase in the opencircuit voltage (Voc), and theshort-circuit current density(Jsc) along with strong improvements in the internal quantum efficiency (IQE) for short-wavelength photons. These improvements can be ascribed to the high level of chemical passivation, as clearly shown by a reduced interface trap density (Dit), and it is due to the less Shockley-Read-Hall recombination. The results presented here suggest that NAOS surface pretreatment is a very promising technology to improve the level of chemical passivation and thereby enhancing the industrialsized PERC performance.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"61 1","pages":"3113-3117"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84200777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8548270
D. McGott, C. Wolden, M. Reese
Controlled thermo-mechanical delamination of thin-film solar cells offers a promising approach to drastically improve flexibility and specific power (power-to-weight ratio). However, the issue of film cracking during the delamination process must first be addressed. Here, we examine the causes of cracking during and after delamination, where it is found that cracking is heavily influenced by the material properties of the stressor layer used to induce delamination and the glass substrate that the solar cell is grown on. We then present several ways to reduce cracking during the delamination process.
{"title":"Mitigation of Crack Formation During Thermo-Mechanical Delamination of CdTe Solar Cells","authors":"D. McGott, C. Wolden, M. Reese","doi":"10.1109/PVSC.2018.8548270","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8548270","url":null,"abstract":"Controlled thermo-mechanical delamination of thin-film solar cells offers a promising approach to drastically improve flexibility and specific power (power-to-weight ratio). However, the issue of film cracking during the delamination process must first be addressed. Here, we examine the causes of cracking during and after delamination, where it is found that cracking is heavily influenced by the material properties of the stressor layer used to induce delamination and the glass substrate that the solar cell is grown on. We then present several ways to reduce cracking during the delamination process.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"14 1","pages":"0838-0841"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84597913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547858
R. Vismara, N. P. Dane Linssen, K. X. Wang, S. Fan, O. Isabella, M. Zeman
We present a modelling study of thin silicon based solar cells endowed with periodic and decoupled front/back textures. After careful optimization, the proposed device models exhibit absorption beyond the Lambertian light trapping limit for a wide range of light angles of incidence. The advanced light management scheme is applied to (nano)crystalline silicon solar cells, where the benefits of texturing the absorber rather than the supporting layers is clear and to barium (di)silicide solar cells, which could achieve an implied photocurrent densityof41.1 mA/cm2 for a thickness of only 2 $mu$m.
{"title":"Decoupled textures for broadband absorption enhancement beyond Lambertian light trapping limit in thin-film silicon-based solar cells","authors":"R. Vismara, N. P. Dane Linssen, K. X. Wang, S. Fan, O. Isabella, M. Zeman","doi":"10.1109/PVSC.2018.8547858","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547858","url":null,"abstract":"We present a modelling study of thin silicon based solar cells endowed with periodic and decoupled front/back textures. After careful optimization, the proposed device models exhibit absorption beyond the Lambertian light trapping limit for a wide range of light angles of incidence. The advanced light management scheme is applied to (nano)crystalline silicon solar cells, where the benefits of texturing the absorber rather than the supporting layers is clear and to barium (di)silicide solar cells, which could achieve an implied photocurrent densityof41.1 mA/cm2 for a thickness of only 2 $mu$m.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"29 1","pages":"3455-3459"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78489879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547946
M. Siriwardhana, D. Macdonald, F. Heinz, F. Rougieux
The trapping characteristics of defects related to thermal donors have been studied with transient photoconductance measurements in Cz monocrystalline silicon wafers. The samples were annealed for various lengths of time to create a range of thermal donor concentrations. The de-trapping time constant was measured using photoconductance decay after the illumination is turned off. In order to obtain an estimate of the de-trapping time constants, the measurements were fitted with exponential terms. We find that the de-trapping time constant is inversely related to the concentration of thermal donors, while trapping is not observed in samples without thermal donors.
{"title":"Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density","authors":"M. Siriwardhana, D. Macdonald, F. Heinz, F. Rougieux","doi":"10.1109/PVSC.2018.8547946","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547946","url":null,"abstract":"The trapping characteristics of defects related to thermal donors have been studied with transient photoconductance measurements in Cz monocrystalline silicon wafers. The samples were annealed for various lengths of time to create a range of thermal donor concentrations. The de-trapping time constant was measured using photoconductance decay after the illumination is turned off. In order to obtain an estimate of the de-trapping time constants, the measurements were fitted with exponential terms. We find that the de-trapping time constant is inversely related to the concentration of thermal donors, while trapping is not observed in samples without thermal donors.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"86 1","pages":"3312-3314"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78544945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547994
Yegor Samoilenko, C. Wolden
Development of copper-free ZnTe buffer layers for CdTe-based solar cells is an important avenue for improving stability. Group V elements offer a path towards that goal. This work explores two group V elements, phosphorous and antimony, as candidates for making copper-free p-type ZnTe buffer layer using thermal evaporation. It is found that incorporation of both elements into ZnTe film can easily be done. In addition, as deposited ZnTe films are Te-rich and Cd1-x Znx Te alloys form upon co-evaporation of ZnTe and Cd3P2, improving crystallinity and stoichiometry of the film. Activation of P poses a challenge, while ZnTe films with Sb produced good sheet resistance values.
{"title":"Exploration of copper-free ZnTe buffer layers for CdTe-based solar cells","authors":"Yegor Samoilenko, C. Wolden","doi":"10.1109/PVSC.2018.8547994","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547994","url":null,"abstract":"Development of copper-free ZnTe buffer layers for CdTe-based solar cells is an important avenue for improving stability. Group V elements offer a path towards that goal. This work explores two group V elements, phosphorous and antimony, as candidates for making copper-free p-type ZnTe buffer layer using thermal evaporation. It is found that incorporation of both elements into ZnTe film can easily be done. In addition, as deposited ZnTe films are Te-rich and Cd1-x Znx Te alloys form upon co-evaporation of ZnTe and Cd3P2, improving crystallinity and stoichiometry of the film. Activation of P poses a challenge, while ZnTe films with Sb produced good sheet resistance values.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"2017 1","pages":"3040-3043"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77452314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547295
A. Paduthol, M. Juhl, G. Nogay, P. Löper, A. Ingenito, T. Trupke
Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon. A method to quantify the efficiency of such carrier injection using the spectral response of photoluminescence has recently been demonstrated. As this is a contactless method, it can be applied to incomplete device structures. Here we, use this technique to measure partially processed heterojunction devices with different capping layers to quantify their impact on the carrier injection efficiency. Silicon nitride capping on amorphous silicon is shown to have minimum impact on the high carrier injection efficiency of the amorphous layer whereas phosphorus doped amorphous capping layers on the other hand were seen to have a strong effect on the carrier injection efficiency.
{"title":"Carrier injection from amorphous silicon into crystalline silicon determined with photoluminescence","authors":"A. Paduthol, M. Juhl, G. Nogay, P. Löper, A. Ingenito, T. Trupke","doi":"10.1109/PVSC.2018.8547295","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547295","url":null,"abstract":"Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon. A method to quantify the efficiency of such carrier injection using the spectral response of photoluminescence has recently been demonstrated. As this is a contactless method, it can be applied to incomplete device structures. Here we, use this technique to measure partially processed heterojunction devices with different capping layers to quantify their impact on the carrier injection efficiency. Silicon nitride capping on amorphous silicon is shown to have minimum impact on the high carrier injection efficiency of the amorphous layer whereas phosphorus doped amorphous capping layers on the other hand were seen to have a strong effect on the carrier injection efficiency.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"59 6 1","pages":"3746-3750"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77761693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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