Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457157
M. Hardy, D. Meyer, N. Nepal, B. Downey, D. Scott Katzer, D. Storm
Incorporating a novel ultra-wide bandgap material, ScAlN, as the layer material in III-nitride highelectron-mobility transistors has the potential to improve output power at millimeter wave frequencies. Lattice-matched ScAlN can be grown by molecular beam epitaxy with high interfacial quality and phase purity. Varying the ScAlN barrier thickness from 3–25 nm results in sheet charge densities of 2.0–3.2 × 1013 cm−2and electron mobilities as high as 1060 cm2/V·s
将一种新型的超宽带隙材料ScAlN作为iii -氮化物高电子迁移率晶体管的层材料，有可能提高毫米波频率下的输出功率。通过分子束外延可以生长出晶格匹配的ScAlN，具有较高的界面质量和相纯度。当ScAlN势垒厚度在3-25 nm范围内变化时，薄片电荷密度为2.0-3.2 × 1013 cm - 2，电子迁移率高达1060 cm2/V·s
{"title":"Scandium Aluminum Nitride as an Emerging Material for High Power Transistors","authors":"M. Hardy, D. Meyer, N. Nepal, B. Downey, D. Scott Katzer, D. Storm","doi":"10.1109/IMWS-AMP.2018.8457157","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457157","url":null,"abstract":"Incorporating a novel ultra-wide bandgap material, ScAlN, as the layer material in III-nitride highelectron-mobility transistors has the potential to improve output power at millimeter wave frequencies. Lattice-matched ScAlN can be grown by molecular beam epitaxy with high interfacial quality and phase purity. Varying the ScAlN barrier thickness from 3–25 nm results in sheet charge densities of 2.0–3.2 × 10<sup>13</sup> cm<sup>−2</sup>and electron mobilities as high as 1060 cm<inf>2</inf>/V·s","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89390380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457140
V. Chauhan, L. W. Wandji, X. Peng, V. Silva Cortes, A. Frank, M. Fischer, U. Stehr, R. Weigel, A. Hagelauer
In radio frequency (RF) integrated circuits for LTE transmitters (Tx), the consideration of the thermal and nonlinear coupling between the Power Amplifier (PA) and adjacent RF filters realized by Bulk Acoustic Wave (BAW) technology is crucial for reliability and requires special attention. A co-design of Gallium Arsenide (GaAs) PA, BAW Tx filter with optimum matching network is created on two substrate technologies. One design utilizes a novel silicon-ceramic (SiCer) platform which combines a stack of low temperature co-fired ceramic (LTCC) layers with a thin silicon wafer in a single composite substrate and the second design uses standard woven glass/epoxy substrate technology. The linear performance of the different substrate technologies are compared with the same layout design. The BAW filter is based on Solidly Mounted Resonators (SMR) electrically coupled in a ladder type topology.
{"title":"Design and Performance of Power Amplifier Integration with BAW Filter on a Silicon-Ceramic Composite and Standard Epoxy/Glass Substrate","authors":"V. Chauhan, L. W. Wandji, X. Peng, V. Silva Cortes, A. Frank, M. Fischer, U. Stehr, R. Weigel, A. Hagelauer","doi":"10.1109/IMWS-AMP.2018.8457140","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457140","url":null,"abstract":"In radio frequency (RF) integrated circuits for LTE transmitters (Tx), the consideration of the thermal and nonlinear coupling between the Power Amplifier (PA) and adjacent RF filters realized by Bulk Acoustic Wave (BAW) technology is crucial for reliability and requires special attention. A co-design of Gallium Arsenide (GaAs) PA, BAW Tx filter with optimum matching network is created on two substrate technologies. One design utilizes a novel silicon-ceramic (SiCer) platform which combines a stack of low temperature co-fired ceramic (LTCC) layers with a thin silicon wafer in a single composite substrate and the second design uses standard woven glass/epoxy substrate technology. The linear performance of the different substrate technologies are compared with the same layout design. The BAW filter is based on Solidly Mounted Resonators (SMR) electrically coupled in a ladder type topology.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"4 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82379337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457151
K. Xiong, Lei Li, Roderick J. Marstell, A. Madjar, N. Strandwitz, J. Hwang, G. Qiu, Yixiu Wang, Wenzhuo Wu, P. Ye, A. Göritz, M. Wietstruck, M. Kaynak
For the first time, thousands of tellurene MOSFETs were batch-fabricated by a CMOS-compatible wafer process. However, the yield was only approximately 1% mainly because the tellurene was nonuniform and discontinuous. Nevertheless, the large-scale material-device correlation confirmed that the thicker the tellurene, the higher the current capacity, but the lower the on/off ratio. Such large-scale material/device correlation can help improve both the material and the device in the future.
{"title":"Wafer-scale Material-device Correlation of Tellurene MOSFETs","authors":"K. Xiong, Lei Li, Roderick J. Marstell, A. Madjar, N. Strandwitz, J. Hwang, G. Qiu, Yixiu Wang, Wenzhuo Wu, P. Ye, A. Göritz, M. Wietstruck, M. Kaynak","doi":"10.1109/IMWS-AMP.2018.8457151","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457151","url":null,"abstract":"For the first time, thousands of tellurene MOSFETs were batch-fabricated by a CMOS-compatible wafer process. However, the yield was only approximately 1% mainly because the tellurene was nonuniform and discontinuous. Nevertheless, the large-scale material-device correlation confirmed that the thicker the tellurene, the higher the current capacity, but the lower the on/off ratio. Such large-scale material/device correlation can help improve both the material and the device in the future.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"61 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78545297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457158
M. Hajizadegan, M. Sakhdari, Pai-Yen Chen
We propose a new type of wireless displacement sensor based on the concept of parity-time (PT)-symmetry. The PT-symmetric wireless sensor consists of a -RLC tank (reader) and a RLC (tag) tank, which are inductively coupled to fulfill the PT-symmetry condition. Specifically, when this wireless sensor is operated nearby the exceptional point (EP), uniquely existing in the PT system, it can exhibit highly sensitive frequency responses with respect to the change in the distance between reader and tag. The effectiveness of the proposed wireless displacement sensor is experimentally verified, showing great potential for high-precision displacement, position and distance measurements, assessment of civil infrastructures, as well as industrial and medical internet-of-things (IoTs).
{"title":"PT-Symmetric Inductive Displacement Sensors","authors":"M. Hajizadegan, M. Sakhdari, Pai-Yen Chen","doi":"10.1109/IMWS-AMP.2018.8457158","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457158","url":null,"abstract":"We propose a new type of wireless displacement sensor based on the concept of parity-time (PT)-symmetry. The PT-symmetric wireless sensor consists of a -RLC tank (reader) and a RLC (tag) tank, which are inductively coupled to fulfill the PT-symmetry condition. Specifically, when this wireless sensor is operated nearby the exceptional point (EP), uniquely existing in the PT system, it can exhibit highly sensitive frequency responses with respect to the change in the distance between reader and tag. The effectiveness of the proposed wireless displacement sensor is experimentally verified, showing great potential for high-precision displacement, position and distance measurements, assessment of civil infrastructures, as well as industrial and medical internet-of-things (IoTs).","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"32 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76293405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457161
A. Combs, Kevin A. Kam, A. Ohta, W. Shiroma
Ferrofluidic actuation of liquid metal, demonstrated for the first time on an RF device, employs the magnetic response of a low-loss hydrocarbon-based ferrofluid for a simple RF switch. The ferrofluid is shown to reduce losses by an average of 4.9 dB from 50 MHz to 20 GHz compared to a lossy aqueous solution commonly used in existing actuation methods for liquid metal. These results offer a promising alternative for liquidmetal reconfigurable RF circuits.
{"title":"A Ferrofluidically Actuated Liquid-Metal RF Switch","authors":"A. Combs, Kevin A. Kam, A. Ohta, W. Shiroma","doi":"10.1109/IMWS-AMP.2018.8457161","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457161","url":null,"abstract":"Ferrofluidic actuation of liquid metal, demonstrated for the first time on an RF device, employs the magnetic response of a low-loss hydrocarbon-based ferrofluid for a simple RF switch. The ferrofluid is shown to reduce losses by an average of 4.9 dB from 50 MHz to 20 GHz compared to a lossy aqueous solution commonly used in existing actuation methods for liquid metal. These results offer a promising alternative for liquidmetal reconfigurable RF circuits.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"19 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85893060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457139
R. Benoit, Christopher Y. Cheng, R. Rudy, R. Polcawich, J. Pulskamp, D. Potrepka, B. Hanrahan, S. Trolier-McKinstry
Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.
用于射频MEMS应用的溅射Pb(Zr52Ti48)O3 (PZT)薄膜生长在150毫米的蓝宝石上硅(SOS)衬底上。薄膜性能与沉积在150mm Si/SiO2晶圆上的类似薄膜进行了比较。在SOS上沉积的PZT薄膜的PMAX (46.2 vs. 42.1 μV/cm2)和PREM (22.0 vs. 16.5 μV/cm2)均优于Si上沉积的薄膜。还注意到最大ϵr从1027 (Si)减少到927 (SOS)。晶体结构采用x射线衍射检测，铁电P-E迟滞曲线、介电常数调谐和损耗切线采用自制电容器结构研究。
{"title":"Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates","authors":"R. Benoit, Christopher Y. Cheng, R. Rudy, R. Polcawich, J. Pulskamp, D. Potrepka, B. Hanrahan, S. Trolier-McKinstry","doi":"10.1109/IMWS-AMP.2018.8457139","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457139","url":null,"abstract":"Sputtered Pb(Zr<inf>52</inf>Ti<inf>48</inf>)O<inf>3</inf> (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO<inf>2</inf> wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm<sup>2</sup>) and PREM (22.0 vs. 16.5 μV/cm<sup>2</sup>) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"31 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75793671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457137
Z. V. Missen, A. Semnani, D. Peroulis
A novel microplasma generator based on a halfwavelength grounded coplanar waveguide is introduced. Design theory and considerations as well as simulation results are presented. Measured results of a fabricated circuit are compared with simulations. Sustained microplasma glow discharges are achieved in sub-atmospheric pressure argon with sustained input powers of less than 400 mW. The excitation frequency dependence of the discharge location is also investigated, and its implication for future designs is discussed.
{"title":"Microwave-Driven CPW Microplasma Generator for Low-Power Discharge","authors":"Z. V. Missen, A. Semnani, D. Peroulis","doi":"10.1109/IMWS-AMP.2018.8457137","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457137","url":null,"abstract":"A novel microplasma generator based on a halfwavelength grounded coplanar waveguide is introduced. Design theory and considerations as well as simulation results are presented. Measured results of a fabricated circuit are compared with simulations. Sustained microplasma glow discharges are achieved in sub-atmospheric pressure argon with sustained input powers of less than 400 mW. The excitation frequency dependence of the discharge location is also investigated, and its implication for future designs is discussed.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"31 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75065407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457159
Alba Galán, Valentín de la Rubia
Current design of microwave filters relies on intensive computer simulations to accurately predict the electromagnetic behavior of microwave circuits. Typically, global optimization techniques are taken into account and reduced knowledge of the actual electromagnetics is considered within computer-aided design. To this end, microwave filter development results in a rather time-consuming engineering task.In this work, we address a methodology for fast frequency analysis in microwave circuits in order to speed up full-wave simulations. Appropriate Finite Element solution to time-harmonic Maxwell's equations in the frequency band of interest is involved and a reliable reduced-order model is obtained via the ReducedBasis Method. This time, the analysis domain is decomposed into building-blocks and a reduced-order model for fast frequency sweep is carried out for each block. The electromagnetics within each block is described in terms of a Generalised Impedance Matrix (GIM) transfer function. In order to get the frequency response of the whole microwave circuit, the GIMs for each block should be connected appropriately. This process has been traditionally done frequency by frequency and can be considered a bottleneck in Domain Decomposition (DD) approaches. In this work, we take into account a further fast frequency sweep for the building-block connection problem. As a result, a speed-up in the simulation time in microwave circuits is achieved as the bottleneck in the DD approach is completely removed.
{"title":"Fast Frequency Sweep for Building-Block Connections in Microwave Filter Analysis via the Reduced-Basis Method","authors":"Alba Galán, Valentín de la Rubia","doi":"10.1109/IMWS-AMP.2018.8457159","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457159","url":null,"abstract":"Current design of microwave filters relies on intensive computer simulations to accurately predict the electromagnetic behavior of microwave circuits. Typically, global optimization techniques are taken into account and reduced knowledge of the actual electromagnetics is considered within computer-aided design. To this end, microwave filter development results in a rather time-consuming engineering task.In this work, we address a methodology for fast frequency analysis in microwave circuits in order to speed up full-wave simulations. Appropriate Finite Element solution to time-harmonic Maxwell's equations in the frequency band of interest is involved and a reliable reduced-order model is obtained via the ReducedBasis Method. This time, the analysis domain is decomposed into building-blocks and a reduced-order model for fast frequency sweep is carried out for each block. The electromagnetics within each block is described in terms of a Generalised Impedance Matrix (GIM) transfer function. In order to get the frequency response of the whole microwave circuit, the GIMs for each block should be connected appropriately. This process has been traditionally done frequency by frequency and can be considered a bottleneck in Domain Decomposition (DD) approaches. In this work, we take into account a further fast frequency sweep for the building-block connection problem. As a result, a speed-up in the simulation time in microwave circuits is achieved as the bottleneck in the DD approach is completely removed.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"221 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86681311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457169
M. Abdolrazzaghi, M. Daneshmand
This work illustrates a negative resistance-based oscillator in microwave regime that is used as a non-contact sensing apparatus. The oscillator generates −0.28 dBm output power at 3.992 GHz that is used as a near-field monitoring device. A 4×6 mosaic pattern of dielectric slabs (2cm × 2cm each) is filled with various permittivity values ranging from 2.2 – 12.85. ±50 kHz resolution in recognizing the dielectric constant of the slabs in each row and column ensures a repeatable response when the sensor is 5mm away from the test surface.
{"title":"A 4 GHz Near-Field Monitoring Planar Oscillator Sensor","authors":"M. Abdolrazzaghi, M. Daneshmand","doi":"10.1109/IMWS-AMP.2018.8457169","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457169","url":null,"abstract":"This work illustrates a negative resistance-based oscillator in microwave regime that is used as a non-contact sensing apparatus. The oscillator generates −0.28 dBm output power at 3.992 GHz that is used as a near-field monitoring device. A 4×6 mosaic pattern of dielectric slabs (2cm × 2cm each) is filled with various permittivity values ranging from 2.2 – 12.85. ±50 kHz resolution in recognizing the dielectric constant of the slabs in each row and column ensures a repeatable response when the sensor is 5mm away from the test surface.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"61 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88427564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457133
Isabella Lau, F. Michler, A. Talai, R. Weigel, A. Koelpin
This paper presents a resonant measurement method based on substrate integrated waveguide cavities for determination of the true relative permittivity of a PCB material. The sensor is manufactured on the unknown PCB material and in contrast to existing, comparable methods, the extraction process takes into account the metal roughness. The proposed method does not require any reference materials or sensors on different PCB thicknesses. This paper contains considerations regarding the design and simulation as well as measurement results of the sensor system. To validate the measurement system, the extracted relative permittivity values of the RO4350B substrate over the frequency range of 10GHz to 90GHz are presented.
{"title":"A Resonant Substrate Integrated Waveguide Measurement System for True Relative Permittivity Extraction of PCB Materials up to 90 GHz","authors":"Isabella Lau, F. Michler, A. Talai, R. Weigel, A. Koelpin","doi":"10.1109/IMWS-AMP.2018.8457133","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457133","url":null,"abstract":"This paper presents a resonant measurement method based on substrate integrated waveguide cavities for determination of the true relative permittivity of a PCB material. The sensor is manufactured on the unknown PCB material and in contrast to existing, comparable methods, the extraction process takes into account the metal roughness. The proposed method does not require any reference materials or sensors on different PCB thicknesses. This paper contains considerations regarding the design and simulation as well as measurement results of the sensor system. To validate the measurement system, the extracted relative permittivity values of the RO4350B substrate over the frequency range of 10GHz to 90GHz are presented.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"42 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80597246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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