Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457156
Gabriel L. Smith, N. Lazarus, Seth Mccormick
A new hands-free approach to antenna fabrication is presented here, with laser folding used to fabricate a prototype 94.5 GHz end-fed longitudinal shunt slot array (EFLSSA) antenna. Laser cutting and folding was demonstrated for creation of 3D metal antennas as a low cost, rapidly iterated alternative to machining techniques such as electro-discharge machining (EDM) and die forming. The technique used is based on a low cost and power 1064nm marking laser. All cutting and folding is done completely remotely using the laser itself from a blank sheet of metal foil. The demonstrated waveguide slots are cut to sub-micron precision, and modelling of the resulting structure is also presented.
{"title":"Laser Folded Antenna","authors":"Gabriel L. Smith, N. Lazarus, Seth Mccormick","doi":"10.1109/IMWS-AMP.2018.8457156","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457156","url":null,"abstract":"A new hands-free approach to antenna fabrication is presented here, with laser folding used to fabricate a prototype 94.5 GHz end-fed longitudinal shunt slot array (EFLSSA) antenna. Laser cutting and folding was demonstrated for creation of 3D metal antennas as a low cost, rapidly iterated alternative to machining techniques such as electro-discharge machining (EDM) and die forming. The technique used is based on a low cost and power 1064nm marking laser. All cutting and folding is done completely remotely using the laser itself from a blank sheet of metal foil. The demonstrated waveguide slots are cut to sub-micron precision, and modelling of the resulting structure is also presented.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"13 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89739858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457170
J. Pourahmadazar, Sara Sahebghalam, S. Abazari Aghdam, M. Nouri
This paper presents a novel Fresnel Zone Plate Lens (FZPL) using perforated 3D printing material at 60 GHz$lambda_mathrm {0} = mathrm {5.45 mm}$. A gradient refractive index condition is controlled using the air-hole approach in the dielectric slab. This structure employs on conical horn antenna as a beam launcher for focusing applications. The proposed FZPL lens is a flat type lens with half phase correction properties. A recommended prototype planar lens is performed on the 3mm thickness of a plastic material with a constant relative permittivity. Throughout this paper, the lens antenna design process at millimeter wave frequency band has been demonstrated for V-band applications.
{"title":"A Millimeter-Wave Fresnel Zone Plate Lens Design Using Perforated 3D Printing Material","authors":"J. Pourahmadazar, Sara Sahebghalam, S. Abazari Aghdam, M. Nouri","doi":"10.1109/IMWS-AMP.2018.8457170","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457170","url":null,"abstract":"This paper presents a novel Fresnel Zone Plate Lens (FZPL) using perforated 3D printing material at 60 GHz$lambda_mathrm {0} = mathrm {5.45 mm}$. A gradient refractive index condition is controlled using the air-hole approach in the dielectric slab. This structure employs on conical horn antenna as a beam launcher for focusing applications. The proposed FZPL lens is a flat type lens with half phase correction properties. A recommended prototype planar lens is performed on the 3mm thickness of a plastic material with a constant relative permittivity. Throughout this paper, the lens antenna design process at millimeter wave frequency band has been demonstrated for V-band applications.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"23 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81571159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457155
Z. Jiang
This paper presents a review of recently developed compact single-band and dual-band linearly-polarized and circularly-polarized conformal antennas for body-area networks. By utilizing strongly-truncated anisotropic artificial ground structures, the form factor of the integrated antennas can be limited within a volume of $0.5lambda_{0}$ by $0.5 lambda_{0}$ by $0.05 lambda_{0}$. As compared with conventional linearly-polarized and circularly-polarized patch antennas having the same form factor, the proposed antennas possess more robust performance metrics under structural deformation and human body loading. Experiments were performed to verify the proposed designs, particularly when they are mounted on a human body for off-body communications in a body-area network.
{"title":"Compact Wearable Antennas Enabled by Artificial Ground Structures","authors":"Z. Jiang","doi":"10.1109/IMWS-AMP.2018.8457155","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457155","url":null,"abstract":"This paper presents a review of recently developed compact single-band and dual-band linearly-polarized and circularly-polarized conformal antennas for body-area networks. By utilizing strongly-truncated anisotropic artificial ground structures, the form factor of the integrated antennas can be limited within a volume of $0.5lambda_{0}$ by $0.5 lambda_{0}$ by $0.05 lambda_{0}$. As compared with conventional linearly-polarized and circularly-polarized patch antennas having the same form factor, the proposed antennas possess more robust performance metrics under structural deformation and human body loading. Experiments were performed to verify the proposed designs, particularly when they are mounted on a human body for off-body communications in a body-area network.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"60 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78148559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457145
S. Remillard, Anna E. Wormmeester, G. Ghigo
Two-dimensional scanning is combined with a method to locally excite intermodulation distortion (IMD) in a cuprate superconducting microwave resonator. The technique provides local maps of second and third order IMD. The two orders originate from distinct processes and require multiple tones in order to both be excited in a narrow passband. This is the first report where multiple orders of IMD are mapped at their points of origin at the operating frequency of the device. Two samples are shown, one pristine sample and one with an engineered defect, revealing a dominance of the defect in the nonlinearity of the device.
{"title":"Near-field Scanning of Intermodulation Distortion in Superconducting Resonators","authors":"S. Remillard, Anna E. Wormmeester, G. Ghigo","doi":"10.1109/IMWS-AMP.2018.8457145","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457145","url":null,"abstract":"Two-dimensional scanning is combined with a method to locally excite intermodulation distortion (IMD) in a cuprate superconducting microwave resonator. The technique provides local maps of second and third order IMD. The two orders originate from distinct processes and require multiple tones in order to both be excited in a narrow passband. This is the first report where multiple orders of IMD are mapped at their points of origin at the operating frequency of the device. Two samples are shown, one pristine sample and one with an engineered defect, revealing a dominance of the defect in the nonlinearity of the device.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"37 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76633235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457128
M. N. Esfahani, M. P. Shuttleworth, R. A. Harris, R. Kay, V. Doychinov, I. Robertson, J. Marqués-Hueso, T. Jones, A. Ryspayeva, M. Desmulliez
This paper presents a new digitally driven manufacturing process chain for the production of high performance, three-dimensional RF devices. This is achieved by combining Fused Filament Fabrication of polyetherimide based polymer with selective light-based synthesis of silver nanoparticles and electrochemical deposition of copper. The resultant manufacturing method produces devices with excellent DC electrical resistivity (6.68 μΩ cm) and dielectric properties (relative permittivity of 2.67 and loss tangent of 0.001). Chemically modifying and patterning the substrate to produce the metallization overcomes many of the limitations of direct write deposition methods resulting in improved performance, adhesion and resolution of the antenna pattern. The fabricated demonstrators cover a broadband range of 0.1 GHz – 10 GHz and the measured results show a direct agreement with the simulated design over a wide frequency band. Overall the materials used as a substrate have a low relative permittivity and lower dielectric loss than FR-4, thereby making them well suited for antenna applications.
{"title":"Hybrid Additive Manufacture of Conformal Antennas","authors":"M. N. Esfahani, M. P. Shuttleworth, R. A. Harris, R. Kay, V. Doychinov, I. Robertson, J. Marqués-Hueso, T. Jones, A. Ryspayeva, M. Desmulliez","doi":"10.1109/IMWS-AMP.2018.8457128","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457128","url":null,"abstract":"This paper presents a new digitally driven manufacturing process chain for the production of high performance, three-dimensional RF devices. This is achieved by combining Fused Filament Fabrication of polyetherimide based polymer with selective light-based synthesis of silver nanoparticles and electrochemical deposition of copper. The resultant manufacturing method produces devices with excellent DC electrical resistivity (6.68 μΩ cm) and dielectric properties (relative permittivity of 2.67 and loss tangent of 0.001). Chemically modifying and patterning the substrate to produce the metallization overcomes many of the limitations of direct write deposition methods resulting in improved performance, adhesion and resolution of the antenna pattern. The fabricated demonstrators cover a broadband range of 0.1 GHz – 10 GHz and the measured results show a direct agreement with the simulated design over a wide frequency band. Overall the materials used as a substrate have a low relative permittivity and lower dielectric loss than FR-4, thereby making them well suited for antenna applications.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"236 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76483729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457148
A. Hagerstrom, E. Marksz, C. Long, J. Booth, I. Takeuchi, N. Orloff
Ferroelectric materials are attractive for tunable components because their permittivity can be controlled by an applied electric field. The permittivity of these materials also depends on frequency, and can have a strongly nonlinear electric field dependence. A quantitative understanding of these behaviors is relevant for integration of tunable materials into devices. In this paper, we provide a simple closed-form expression for this dependence, which to our knowledge has never appeared in the literature. This expression is based on thermodynamic principles, and we expect it to be both widely applicable and generalizable. We test this model with measurements of transmission lines lithographically patterned on a ferroelectric thin film, and find that the relaxation timescales become shorter at higher bias fields. We attribute this faster relaxation to the steepening of the free energy gradient when a bias field is applied.
{"title":"Frequency- and Electric Field-Dependent Physical Model of Ferroelectric Materials in the Tens of GHz","authors":"A. Hagerstrom, E. Marksz, C. Long, J. Booth, I. Takeuchi, N. Orloff","doi":"10.1109/IMWS-AMP.2018.8457148","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457148","url":null,"abstract":"Ferroelectric materials are attractive for tunable components because their permittivity can be controlled by an applied electric field. The permittivity of these materials also depends on frequency, and can have a strongly nonlinear electric field dependence. A quantitative understanding of these behaviors is relevant for integration of tunable materials into devices. In this paper, we provide a simple closed-form expression for this dependence, which to our knowledge has never appeared in the literature. This expression is based on thermodynamic principles, and we expect it to be both widely applicable and generalizable. We test this model with measurements of transmission lines lithographically patterned on a ferroelectric thin film, and find that the relaxation timescales become shorter at higher bias fields. We attribute this faster relaxation to the steepening of the free energy gradient when a bias field is applied.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"56 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87473360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457150
C. Nordquist, D. Leonhardt, J. Custer, T. Jordan, S. Wolfley, S. Scott, Molly N. Sing, M. Cich, C. Rodenbeck
Maximum power handling, spike leakage, and failure mechanisms have been characterized for limiters based on the thermally triggered metal-insulator transition of vanadium dioxide. These attributes are determined by properties of the metal-insulator material such as on/off resistance ratio, geometric properties that determine the film resistance and the currentcarrying capability of the device, and thermal properties such as heatsinking and thermal coupling. A limiter with greater than 10 GHz of bandwidth demonstrated 0.5 dB loss, 27 dBm threshold power, 8 Watts blocking power, and 0.4 mJ spike leakage at frequencies near 2 GHz. A separate limiter optimized for high power blocked over 60 Watts of incident power with leakage less than 25 dBm after triggering. The power handling demonstrates promise for these limiter devices, and device optimization presents opportunities for additional improvement in spike leakage, response speed, and reliability.
{"title":"Power Handling of Vanadium Dioxide Metal-Insulator Transition RF Limiters","authors":"C. Nordquist, D. Leonhardt, J. Custer, T. Jordan, S. Wolfley, S. Scott, Molly N. Sing, M. Cich, C. Rodenbeck","doi":"10.1109/IMWS-AMP.2018.8457150","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457150","url":null,"abstract":"Maximum power handling, spike leakage, and failure mechanisms have been characterized for limiters based on the thermally triggered metal-insulator transition of vanadium dioxide. These attributes are determined by properties of the metal-insulator material such as on/off resistance ratio, geometric properties that determine the film resistance and the currentcarrying capability of the device, and thermal properties such as heatsinking and thermal coupling. A limiter with greater than 10 GHz of bandwidth demonstrated 0.5 dB loss, 27 dBm threshold power, 8 Watts blocking power, and 0.4 mJ spike leakage at frequencies near 2 GHz. A separate limiter optimized for high power blocked over 60 Watts of incident power with leakage less than 25 dBm after triggering. The power handling demonstrates promise for these limiter devices, and device optimization presents opportunities for additional improvement in spike leakage, response speed, and reliability.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"31 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82165050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457132
E. Pérez, A. Grossi, C. Zambelli, M. K. Mahadevaiah, P. Olivo, C. Wenger
In this paper, the impact of the forming temperature on the reliability of Hafnium-based RRAM arrays has been investigated. A wide range of high temperatures from 25 °C to 150 °C during the forming operations have been applied. Endurance and retention tests have been performed at room temperature and at 150 °C, respectively. The optimized Incremental Step Pulse and Verify Algorithm (ISPVA) has been used for write operations in order to reduce the cell-to-cell variability. The electricalperformance of HfO2 and Hf1-$_mathrm{1-x}mathbf{Al}mathbf{xAl} _{mathbf {x}} mathbf {O} _{mathbf {y}}$RRAM arrays will be compared.
{"title":"Temperature impact and programming algorithm for RRAM based memories","authors":"E. Pérez, A. Grossi, C. Zambelli, M. K. Mahadevaiah, P. Olivo, C. Wenger","doi":"10.1109/IMWS-AMP.2018.8457132","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457132","url":null,"abstract":"In this paper, the impact of the forming temperature on the reliability of Hafnium-based RRAM arrays has been investigated. A wide range of high temperatures from 25 °C to 150 °C during the forming operations have been applied. Endurance and retention tests have been performed at room temperature and at 150 °C, respectively. The optimized Incremental Step Pulse and Verify Algorithm (ISPVA) has been used for write operations in order to reduce the cell-to-cell variability. The electricalperformance of HfO2 and Hf1-$_mathrm{1-x}mathbf{Al}mathbf{xAl} _{mathbf {x}} mathbf {O} _{mathbf {y}}$RRAM arrays will be compared.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"7 3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89661060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457163
Tejinder Singh, R. Mansour
Compact inline chalcogenide radio-frequency (RF) phase-change material (PCM) switches utilizing germanium telluride (GeTe) in series and shunt configurations are reported in this paper. Phase transition in PCM has been achieved by electrically isolated embedded micro-heaters. RF-PCM switches presented exhibit ON-state resistance of 2.4 ohm and OFF-state capacitance of 8.5 fF. The estimated cut-off frequency $(F_{mathrm{co}})$ is 7.8 THz, which is 10 times higher than state-of-the-art RF CMOS switches. The RF-PCM series and shunt switches are simulated and measured, demonstrating ON-state insertion loss less than 0.3 dB and 0.2 dB and OFF-state isolation higher than 20 dB and 36 dB over DC–26 GHz frequency range respectively.
{"title":"Chalcogenide Phase Change Material GeTe Based Inline RF SPST Series and Shunt Switches","authors":"Tejinder Singh, R. Mansour","doi":"10.1109/IMWS-AMP.2018.8457163","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457163","url":null,"abstract":"Compact inline chalcogenide radio-frequency (RF) phase-change material (PCM) switches utilizing germanium telluride (GeTe) in series and shunt configurations are reported in this paper. Phase transition in PCM has been achieved by electrically isolated embedded micro-heaters. RF-PCM switches presented exhibit ON-state resistance of 2.4 ohm and OFF-state capacitance of 8.5 fF. The estimated cut-off frequency $(F_{mathrm{co}})$ is 7.8 THz, which is 10 times higher than state-of-the-art RF CMOS switches. The RF-PCM series and shunt switches are simulated and measured, demonstrating ON-state insertion loss less than 0.3 dB and 0.2 dB and OFF-state isolation higher than 20 dB and 36 dB over DC–26 GHz frequency range respectively.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"14 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82169894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IMWS-AMP.2018.8457141
H. Maune, D. Kienemund, A. Wiens, S. Preis, C. Schuster, D. Walk, O. Bengtsson, R. Jakoby
This paper presents recent development of ferroelectric varactors for tuning applications. While Barium-StrontiumTitanate (BST) based thick-film components have formerly been realized in planar interdigital (IDC) topology, low-sintering BST composites offer the possibility of metal-insulator-metal (MIM) structures. The possibilities and limits of this technology are discussed in respect to high-power applications, especially the power handling capability and linearity are considered. Thickfilm components with very high power rating of 1kW show acoustic effects, which have to be carefully considered in the design.
{"title":"Ferroelectrics for Tunable High-Power Applications","authors":"H. Maune, D. Kienemund, A. Wiens, S. Preis, C. Schuster, D. Walk, O. Bengtsson, R. Jakoby","doi":"10.1109/IMWS-AMP.2018.8457141","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457141","url":null,"abstract":"This paper presents recent development of ferroelectric varactors for tuning applications. While Barium-StrontiumTitanate (BST) based thick-film components have formerly been realized in planar interdigital (IDC) topology, low-sintering BST composites offer the possibility of metal-insulator-metal (MIM) structures. The possibilities and limits of this technology are discussed in respect to high-power applications, especially the power handling capability and linearity are considered. Thickfilm components with very high power rating of 1kW show acoustic effects, which have to be carefully considered in the design.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"16 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90732127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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