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2014 International Semiconductor Conference (CAS)最新文献

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Monitoring on short-term the corrosion processes of three different metal-ceramic crowns 三种不同金属陶瓷冠的短期腐蚀过程监测
Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966403
M. Andrei, G. Buica, M. Burlibașa, D. Gheorghe, C. Pȋrvu
The paper aims on microfabrication and corrosion processes evaluation of three different metal-ceramic crowns with CoCrMo substructures. The samples have different exposed metal surface and the electrochemical investigations are Tafel analysis and Electrochemical Impedance Spectroscopy (EIS).
本文研究了三种不同CoCrMo亚结构金属陶瓷冠的微加工及腐蚀过程评价。样品具有不同的暴露金属表面,电化学研究采用塔菲尔分析和电化学阻抗谱(EIS)。
{"title":"Monitoring on short-term the corrosion processes of three different metal-ceramic crowns","authors":"M. Andrei, G. Buica, M. Burlibașa, D. Gheorghe, C. Pȋrvu","doi":"10.1109/SMICND.2014.6966403","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966403","url":null,"abstract":"The paper aims on microfabrication and corrosion processes evaluation of three different metal-ceramic crowns with CoCrMo substructures. The samples have different exposed metal surface and the electrochemical investigations are Tafel analysis and Electrochemical Impedance Spectroscopy (EIS).","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"5 1","pages":"99-102"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79066841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Trapping centers in heavy ion irradiated silicon 重离子辐照硅中的俘获中心
Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966411
C. Palade, S. Lazanu, M. Ciurea
Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host. We investigate the correlation between the change of trapping parameters and the strain field. The strain field produced by Bi ions in Si is two times more intense than in Si irradiated with I ions, and effects the Gaussian broadening of trapping levels and the temperature dependence of cross sections.
低通量重离子入射到高电阻率硅上产生晶格缺陷作为俘获中心,并产生重要的局部应变场。应变场强度随离子与主硅原子之间原子尺寸和质量差的增大而增大。研究了俘获参数的变化与应变场的关系。Bi离子在Si中产生的应变场强度是I离子辐照下的2倍,并影响了俘获能级的高斯展宽和截面的温度依赖性。
{"title":"Trapping centers in heavy ion irradiated silicon","authors":"C. Palade, S. Lazanu, M. Ciurea","doi":"10.1109/SMICND.2014.6966411","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966411","url":null,"abstract":"Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host. We investigate the correlation between the change of trapping parameters and the strain field. The strain field produced by Bi ions in Si is two times more intense than in Si irradiated with I ions, and effects the Gaussian broadening of trapping levels and the temperature dependence of cross sections.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"32 1","pages":"125-128"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75184938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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2014 International Semiconductor Conference (CAS)
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