Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966394
S. Condurache-Bota, C. Constantinescu, M. Praisler, R. Gavrila, N. Țigău, C. Gheorghieș
Bismuth oxide thin films are investigated. Two oxidation methods are compared: thermal oxidation in air and pulsed laser ablation (PLD) in oxygen atmosphere of bismuth targets, respectively. It is found that PLD-prepared films have simpler structure, more uniform morphology and slightly lower refractive index than those prepared by thermal oxidation.
{"title":"Influence of the preparation method on the morpho-structural and optical properties of bismuth oxide thin films","authors":"S. Condurache-Bota, C. Constantinescu, M. Praisler, R. Gavrila, N. Țigău, C. Gheorghieș","doi":"10.1109/SMICND.2014.6966394","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966394","url":null,"abstract":"Bismuth oxide thin films are investigated. Two oxidation methods are compared: thermal oxidation in air and pulsed laser ablation (PLD) in oxygen atmosphere of bismuth targets, respectively. It is found that PLD-prepared films have simpler structure, more uniform morphology and slightly lower refractive index than those prepared by thermal oxidation.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"32 1","pages":"69-72"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81129403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966424
A. Bunea, D. Neculoiu, M. Lahti, T. Vaha-Heikkila
This paper presents the design, electromagnetic simulation and experimental results of a 35 GHz microstrip patch antenna with four parasitic patches. The structure was designed for a six tape Low Temperature Co-Fired Ceramics process (LTCC). The antenna element is fed by a stripline, taking advantage of the 3D vertical integration possibilities of the LTCC technology. The measured working band (for |S11| <; - 10 dB) is between 34.48-36.39 GHz. The simulated directivity at 35 GHz is of 8.14 dBi. The compact size of the antenna element (6.24 × 6.15 mm2) and the stripline feed offer the possibility of building large arrays and integrating them in a LTCC system-in-package approach.
{"title":"Stripline-fed LTCC microstrip patch antenna for 35 GHz applications","authors":"A. Bunea, D. Neculoiu, M. Lahti, T. Vaha-Heikkila","doi":"10.1109/SMICND.2014.6966424","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966424","url":null,"abstract":"This paper presents the design, electromagnetic simulation and experimental results of a 35 GHz microstrip patch antenna with four parasitic patches. The structure was designed for a six tape Low Temperature Co-Fired Ceramics process (LTCC). The antenna element is fed by a stripline, taking advantage of the 3D vertical integration possibilities of the LTCC technology. The measured working band (for |S11| <; - 10 dB) is between 34.48-36.39 GHz. The simulated directivity at 35 GHz is of 8.14 dBi. The compact size of the antenna element (6.24 × 6.15 mm2) and the stripline feed offer the possibility of building large arrays and integrating them in a LTCC system-in-package approach.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"305 1","pages":"167-170"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76495894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966466
D. Pascu, O. Nedelcu, A. Nechifor, M. Segarceanu
This paper represents the answer to many challenges in terms of numerical models for the transport of pollutants in drinking water. Due to these reasons this paper represents a particular methodology for estimating the velocity and dispersion coefficients. The aqueous solution transport and adsorption was performed using the COMSOL mathematical program.
{"title":"Simulation of membrane processes with applications in transport and adsorption of nitrate ions","authors":"D. Pascu, O. Nedelcu, A. Nechifor, M. Segarceanu","doi":"10.1109/SMICND.2014.6966466","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966466","url":null,"abstract":"This paper represents the answer to many challenges in terms of numerical models for the transport of pollutants in drinking water. Due to these reasons this paper represents a particular methodology for estimating the velocity and dispersion coefficients. The aqueous solution transport and adsorption was performed using the COMSOL mathematical program.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"15 1","pages":"299-302"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82982206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966404
I. Minkov, S. Simeonov, A. Szekeres, Z. Fogarassy, G. Socol, C. Ristoscu, I. Mihăilescu
AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge transport through the films.
{"title":"Characterisation of the charge transport mechanism in pulsed laser deposited AlN:Si films","authors":"I. Minkov, S. Simeonov, A. Szekeres, Z. Fogarassy, G. Socol, C. Ristoscu, I. Mihăilescu","doi":"10.1109/SMICND.2014.6966404","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966404","url":null,"abstract":"AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge transport through the films.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"45 1","pages":"103-106"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89888278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966443
Florin Bîzîitu, M. Serban, Cristian Murtaza
The proposed circuit is a dual-chain Dickson type charge pump making use of both active and passive charge transfer switches in order to achieve a compromise between power efficiency, circuit complexity and device reliability. The charge pump is capable of sourcing up to 500μA at 10V output voltage for supplying the error amplifiers of two NMOS Low Drop Out (LDO) linear regulators as part of a high integration automotive IC.
{"title":"On-chip 500μA dual-chain Dickson charge pump optimized for NMOS LDO supply","authors":"Florin Bîzîitu, M. Serban, Cristian Murtaza","doi":"10.1109/SMICND.2014.6966443","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966443","url":null,"abstract":"The proposed circuit is a dual-chain Dickson type charge pump making use of both active and passive charge transfer switches in order to achieve a compromise between power efficiency, circuit complexity and device reliability. The charge pump is capable of sourcing up to 500μA at 10V output voltage for supplying the error amplifiers of two NMOS Low Drop Out (LDO) linear regulators as part of a high integration automotive IC.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"33 1","pages":"225-228"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80200351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966462
D. Varsescu, V. Ilian, M. Bazu
A FLIR SC5000 IR thermovision camera was used for analyzing the temperature distribution on the gold surface of the test devices (Schottky diode). The goal was to estimate the values of the temperature in various areas on the surface of the test device. In order to increase the emissivity, the surface was covered with a spray paint, a solution allowing to obtaining better estimations of the surface temperature.
{"title":"Thermographic analysis with enhanced emissivity","authors":"D. Varsescu, V. Ilian, M. Bazu","doi":"10.1109/SMICND.2014.6966462","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966462","url":null,"abstract":"A FLIR SC5000 IR thermovision camera was used for analyzing the temperature distribution on the gold surface of the test devices (Schottky diode). The goal was to estimate the values of the temperature in various areas on the surface of the test device. In order to increase the emissivity, the surface was covered with a spray paint, a solution allowing to obtaining better estimations of the surface temperature.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"13 1","pages":"283-286"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88437001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966458
G. Boldeiu, V. Moagar-Poladian, T. Sandu
The effect of dielectric embedding on the capacitance of back-gated nanowires can be accurately captured as an effective dielectric constant that depends solely on the difference between the nanowire-gate distance and the dielectric thickness. When used for sensing purposes this property provides the maximum sensitivity within a range of two diameters around the center of the nanowire.
{"title":"Capacitance of back-gated nanowires in various dielectric embeddings","authors":"G. Boldeiu, V. Moagar-Poladian, T. Sandu","doi":"10.1109/SMICND.2014.6966458","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966458","url":null,"abstract":"The effect of dielectric embedding on the capacitance of back-gated nanowires can be accurately captured as an effective dielectric constant that depends solely on the difference between the nanowire-gate distance and the dielectric thickness. When used for sensing purposes this property provides the maximum sensitivity within a range of two diameters around the center of the nanowire.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"1 1","pages":"273-276"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81908679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966432
L. Teodorescu, A. Gheorghe, F. Draghici, G. Brezeanu, I. Rusu
A supply technique used for an electric heating resistor mounted inside a thermal chuck system which supports wafer testing in high temperatures domain is described in this paper. Following this technique, a platform for low noise wafer measurements may be develop.
{"title":"Power supply architecture for high temperature chuck systems","authors":"L. Teodorescu, A. Gheorghe, F. Draghici, G. Brezeanu, I. Rusu","doi":"10.1109/SMICND.2014.6966432","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966432","url":null,"abstract":"A supply technique used for an electric heating resistor mounted inside a thermal chuck system which supports wafer testing in high temperatures domain is described in this paper. Following this technique, a platform for low noise wafer measurements may be develop.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"92 1","pages":"193-196"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76370208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966438
M. Tache, Valeriu Beiu, T. Liu
In this paper we propose a dual-voltage hybrid NEMS-CMOS scheme to reduce dynamic power consumption. The scheme uses a smaller input/output voltage to propagate information, and a larger voltage to drive (control) the NEMS. CMOS amplifiers are used to interface these two voltages. Gates with a large(r) number of inputs perform better, which matches the optimal NEMS circuit topology. Simulations for a 4-input Boolean function show that power reductions can be significant.
{"title":"A dual-voltage hybrid NEMS-CMOS low-power scheme","authors":"M. Tache, Valeriu Beiu, T. Liu","doi":"10.1109/SMICND.2014.6966438","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966438","url":null,"abstract":"In this paper we propose a dual-voltage hybrid NEMS-CMOS scheme to reduce dynamic power consumption. The scheme uses a smaller input/output voltage to propagate information, and a larger voltage to drive (control) the NEMS. CMOS amplifiers are used to interface these two voltages. Gates with a large(r) number of inputs perform better, which matches the optimal NEMS circuit topology. Simulations for a 4-input Boolean function show that power reductions can be significant.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"1 1","pages":"211-214"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78790707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966444
Valeriu Beiu, M. Tache, F. Kharbash
Noises and variations are ubiquitous, but are ill-understood and in most cases analyzed simplistically, leading to substantial overdesign costs. A novel reliability-centric design method based on unconventionally sizing transistors has been suggested lately. In this paper our aim is to design, simulate, and compare the benefits of unconventional sizing when applied to SRAM bit-cells. The unconventionally sized SRAM bit-cells achieve higher SNMs, having the potential to work correctly at supply voltages lower than those achieved using classically sized SRAM bit-cells.
{"title":"Reliability enhanced SRAM bit-cells","authors":"Valeriu Beiu, M. Tache, F. Kharbash","doi":"10.1109/SMICND.2014.6966444","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966444","url":null,"abstract":"Noises and variations are ubiquitous, but are ill-understood and in most cases analyzed simplistically, leading to substantial overdesign costs. A novel reliability-centric design method based on unconventionally sizing transistors has been suggested lately. In this paper our aim is to design, simulate, and compare the benefits of unconventional sizing when applied to SRAM bit-cells. The unconventionally sized SRAM bit-cells achieve higher SNMs, having the potential to work correctly at supply voltages lower than those achieved using classically sized SRAM bit-cells.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"112 1","pages":"229-232"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75861819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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