Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966426
G. Bartolucci, G. de Angelis, A. Lucibello, R. Marcelli, E. Proietti
This paper is focused on the design of the transmission lines utilized in microelectromechanical capacitive shunt connected switches. These transmission lines sections are employed as matching elements to improve the performance of the component in the on state. The image phase parameter is used to develop an analytic procedure for the synthesis of such transmission lines. The proposed method is applied for the design of a switch, adopting for the capacitive element the experimental data of a microelectromechanical device previously realized by the authors.
{"title":"An innovative procedure for the synthesis of MEMS capacitive switches","authors":"G. Bartolucci, G. de Angelis, A. Lucibello, R. Marcelli, E. Proietti","doi":"10.1109/SMICND.2014.6966426","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966426","url":null,"abstract":"This paper is focused on the design of the transmission lines utilized in microelectromechanical capacitive shunt connected switches. These transmission lines sections are employed as matching elements to improve the performance of the component in the on state. The image phase parameter is used to develop an analytic procedure for the synthesis of such transmission lines. The proposed method is applied for the design of a switch, adopting for the capacitive element the experimental data of a microelectromechanical device previously realized by the authors.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"27 1","pages":"175-178"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83217871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966464
L. Dobrescu, S. Nimara
This paper reveals the fine border between classical cascode current references design and the modern circuits simulation using nanometer MOSFETs predictive models. Common MOS parameters used for currents ratio in cascode mirrors must be reconsidered.
{"title":"Predictive models for short channel MOS CASCODE current references simulation","authors":"L. Dobrescu, S. Nimara","doi":"10.1109/SMICND.2014.6966464","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966464","url":null,"abstract":"This paper reveals the fine border between classical cascode current references design and the modern circuits simulation using nanometer MOSFETs predictive models. Common MOS parameters used for currents ratio in cascode mirrors must be reconsidered.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"36 1","pages":"291-294"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78307211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966383
D. Planson, P. Brosselard, K. Isoird, M. Lazar, L. Phung, C. Raynaud, D. Tournier
The development of high voltage devices is a great challenge. At least, railway and smart grids are examples of applications requiring high voltage devices. SiC power devices and technology seem to be mature enough to give a short term solution. Indeed, silicon carbide devices appear to be the semiconductor of choice for high voltage (> 6.5 kV) applications compared to Gallium Nitride. Diamond also is considered as a promising material for the next generation power devices. For high voltage devices, periphery protection is mandatory in order to reduce the well-known electric field crowding taking place at the junction edge. Some details are given about the different periphery technics (JTE, guard rings, MESA) applied to SiC and diamond devices, before combining some of them to reach higher and higher breakdown voltages. Finally, a new setup is under development in order to extract the ionization coefficients, compulsory to predict the breakdown voltage.
{"title":"Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects","authors":"D. Planson, P. Brosselard, K. Isoird, M. Lazar, L. Phung, C. Raynaud, D. Tournier","doi":"10.1109/SMICND.2014.6966383","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966383","url":null,"abstract":"The development of high voltage devices is a great challenge. At least, railway and smart grids are examples of applications requiring high voltage devices. SiC power devices and technology seem to be mature enough to give a short term solution. Indeed, silicon carbide devices appear to be the semiconductor of choice for high voltage (> 6.5 kV) applications compared to Gallium Nitride. Diamond also is considered as a promising material for the next generation power devices. For high voltage devices, periphery protection is mandatory in order to reduce the well-known electric field crowding taking place at the junction edge. Some details are given about the different periphery technics (JTE, guard rings, MESA) applied to SiC and diamond devices, before combining some of them to reach higher and higher breakdown voltages. Finally, a new setup is under development in order to extract the ionization coefficients, compulsory to predict the breakdown voltage.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"63 1","pages":"35-40"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78690105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966391
G. Kliros
A fully analytical model for the quantum capacitance of AGNR-FETs is proposed in order to explore several finite-size and edge effects. It is demonstrated that, the quantum capacitance of sub-10 nm AGNRs versus channel potential, has a non-monotonic behavior with peak values and corresponding channel potentials which are strongly dependent on the ribbon's width and edge effects.
{"title":"Finite-size and edge effects on the quantum capacitance of graphene nanoribbon field-effect transistors","authors":"G. Kliros","doi":"10.1109/SMICND.2014.6966391","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966391","url":null,"abstract":"A fully analytical model for the quantum capacitance of AGNR-FETs is proposed in order to explore several finite-size and edge effects. It is demonstrated that, the quantum capacitance of sub-10 nm AGNRs versus channel potential, has a non-monotonic behavior with peak values and corresponding channel potentials which are strongly dependent on the ribbon's width and edge effects.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"107 1","pages":"63-66"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86987985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966440
Alexandru I. Cianga, Cristian Tepus
This paper describes a new structured approach for mixed-signal system simulation. Traditional pre-silicon verification follows two separate tracks: one for analog, another for digital. Our paper shows how to make the two tracks converge. We have integrated analog simulation with digital functional verification. This is the “bridge head” for true mixed-signal pre-silicon verification.
{"title":"Morphing digital functional verification to meet mixed signal challenges","authors":"Alexandru I. Cianga, Cristian Tepus","doi":"10.1109/SMICND.2014.6966440","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966440","url":null,"abstract":"This paper describes a new structured approach for mixed-signal system simulation. Traditional pre-silicon verification follows two separate tracks: one for analog, another for digital. Our paper shows how to make the two tracks converge. We have integrated analog simulation with digital functional verification. This is the “bridge head” for true mixed-signal pre-silicon verification.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"41 1","pages":"219-222"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75321089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966416
R. Tudor, M. Kusko, C. Kusko, F. Craciunoiu, A. Avram, D. Vasilache
This work presents a reproductible fabrication process of spiral phase plates (SPPs) based on microfabrication techniques such as photolithography and reactive ion etching (RIE). The fabricated SPPs operate in the reflection mode in order to generate optical vortices with topological charge m = 2 and m = 4. Structural and functional characterizations prove the optical quality of the fabricated SPP.
{"title":"Fabrication of spiral phase plates for optical vortices","authors":"R. Tudor, M. Kusko, C. Kusko, F. Craciunoiu, A. Avram, D. Vasilache","doi":"10.1109/SMICND.2014.6966416","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966416","url":null,"abstract":"This work presents a reproductible fabrication process of spiral phase plates (SPPs) based on microfabrication techniques such as photolithography and reactive ion etching (RIE). The fabricated SPPs operate in the reflection mode in order to generate optical vortices with topological charge m = 2 and m = 4. Structural and functional characterizations prove the optical quality of the fabricated SPP.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"52 1","pages":"139-142"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73399545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966467
B. Firtat, P. Schiopu
CFD (Computational Fluid Dynamics) methods play a key-role in the design and optimization of modern bio-medical devices. Drug delivery systems efficiently provide small quantities of drugs to the desired human body target tissue. Numerical simulations are performed with the purpose to optimize a microfluidic drug delivery system capable of delivering fluids both by continuous (laminar) flow and by generating fluid droplets. Two types of fluids, a buffer and a drug solution are used, and the flow mode solely depends on the fluids properties and their flow rates. Drugs fluid droplets (either liquid droplets contained in a bio-fluid, such as blood or liquid droplets dispersed in the breathing air - aerosols) and reduced laminar flow (by means of hydrodynamic focusing) of drugs within biological buffers are presented. The results of the CFD simulations provide the necessary information and can be used to develop or improve drug delivery systems for clinical applications.
{"title":"Optimisation of a multi-purpose microfluidic system for bio-medical applications","authors":"B. Firtat, P. Schiopu","doi":"10.1109/SMICND.2014.6966467","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966467","url":null,"abstract":"CFD (Computational Fluid Dynamics) methods play a key-role in the design and optimization of modern bio-medical devices. Drug delivery systems efficiently provide small quantities of drugs to the desired human body target tissue. Numerical simulations are performed with the purpose to optimize a microfluidic drug delivery system capable of delivering fluids both by continuous (laminar) flow and by generating fluid droplets. Two types of fluids, a buffer and a drug solution are used, and the flow mode solely depends on the fluids properties and their flow rates. Drugs fluid droplets (either liquid droplets contained in a bio-fluid, such as blood or liquid droplets dispersed in the breathing air - aerosols) and reduced laminar flow (by means of hydrodynamic focusing) of drugs within biological buffers are presented. The results of the CFD simulations provide the necessary information and can be used to develop or improve drug delivery systems for clinical applications.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"92 10 1","pages":"303-306"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81261266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966397
A. Stoian, C. Pȋrvu, I. Demetrescu
By mixing the same concentration polyethylene glycol (PEG) with molar masses of 400, 600 and 1000, a series of poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT: PSS) composite thin films were prepared by spin coating. The morphology of the films was inspected by Atomic Force Microscopy (AFM). Electrochemical characterizations performed over a time span of five days including Cyclic Voltammetry (CV) and Electrochemical Impedance Spectroscopy (EIS) were used to determine the stability of the films. The experimental results showed that the properties of PEDOT: PSS films were greatly influenced by the molecular weight of PEG.
{"title":"Effects of PEG on the stability and electrochemical properties of PEDOT: PSS films obtained by spin coating","authors":"A. Stoian, C. Pȋrvu, I. Demetrescu","doi":"10.1109/SMICND.2014.6966397","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966397","url":null,"abstract":"By mixing the same concentration polyethylene glycol (PEG) with molar masses of 400, 600 and 1000, a series of poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT: PSS) composite thin films were prepared by spin coating. The morphology of the films was inspected by Atomic Force Microscopy (AFM). Electrochemical characterizations performed over a time span of five days including Cyclic Voltammetry (CV) and Electrochemical Impedance Spectroscopy (EIS) were used to determine the stability of the films. The experimental results showed that the properties of PEDOT: PSS films were greatly influenced by the molecular weight of PEG.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"112 1","pages":"81-84"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80862262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966382
P. Galy
The main purpose of this paper is to give an overview of Electro-Static Discharge (ESD) event with its impacts on advanced CMOS technologies. Afterwards, a discussion will be on ESD elementary devices and how to provide an efficient ESD network protection for System On Chip (SOC). These solutions are obtained according to the ESD window of the planar technology on bulk or Fully Depleted (FD) SOI. Thus it will be possible to imagine what could be the next challenges for an ESD protection.
{"title":"Electro Static Discharge (ESD) one real life event: Physical impact and protection challenges in advanced CMOS technologies","authors":"P. Galy","doi":"10.1109/SMICND.2014.6966382","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966382","url":null,"abstract":"The main purpose of this paper is to give an overview of Electro-Static Discharge (ESD) event with its impacts on advanced CMOS technologies. Afterwards, a discussion will be on ESD elementary devices and how to provide an efficient ESD network protection for System On Chip (SOC). These solutions are obtained according to the ESD window of the planar technology on bulk or Fully Depleted (FD) SOI. Thus it will be possible to imagine what could be the next challenges for an ESD protection.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"24 1","pages":"31-34"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84674809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966380
S. Bellucci, M. Bozzi, A. Cataldo, R. Moro, D. Mencarelli, L. Pierantoni
We present the design of a graphene-based electronically tuneable microstrip attenuator operating at a frequency of 5 GHz. The use of graphene as a variable resistor is discussed and the modelling of its electromagnetic properties at microwave frequencies is fully addressed. The design of the graphene-based attenuator is described. The structure integrates a patch of graphene, whose characteristics can range from being a fairly good conductor to a highly lossy material, depending on the applied voltage. By applying the proper voltage through two high-impedance bias lines, the surface resistivity of graphene can be modified, thereby changing the insertion loss of the microstrip attenuator.
{"title":"Graphene as a tunable resistor","authors":"S. Bellucci, M. Bozzi, A. Cataldo, R. Moro, D. Mencarelli, L. Pierantoni","doi":"10.1109/SMICND.2014.6966380","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966380","url":null,"abstract":"We present the design of a graphene-based electronically tuneable microstrip attenuator operating at a frequency of 5 GHz. The use of graphene as a variable resistor is discussed and the modelling of its electromagnetic properties at microwave frequencies is fully addressed. The design of the graphene-based attenuator is described. The structure integrates a patch of graphene, whose characteristics can range from being a fairly good conductor to a highly lossy material, depending on the applied voltage. By applying the proper voltage through two high-impedance bias lines, the surface resistivity of graphene can be modified, thereby changing the insertion loss of the microstrip attenuator.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"12 1","pages":"17-20"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74346413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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