Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966465
C. Marculescu, C. Bălan, A. Avram, M. Avram
The present microfluidic study is emphasizing the flow behavior of two immiscible fluids within a microchannel with three inlets and one outlet. We report here a numerical investigation on the interface shape dynamics manifested at different flow rate ratios (FRR) over the inlets. Changing only the FRR of the inlets, the droplets behavior modifies drastically. From the numerical point of view, the interface shape is used to characterize the manifestation of droplet formation.
{"title":"Droplets formation in microfluidic hydrodynamic focusing channels — Numerical investigation","authors":"C. Marculescu, C. Bălan, A. Avram, M. Avram","doi":"10.1109/SMICND.2014.6966465","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966465","url":null,"abstract":"The present microfluidic study is emphasizing the flow behavior of two immiscible fluids within a microchannel with three inlets and one outlet. We report here a numerical investigation on the interface shape dynamics manifested at different flow rate ratios (FRR) over the inlets. Changing only the FRR of the inlets, the droplets behavior modifies drastically. From the numerical point of view, the interface shape is used to characterize the manifestation of droplet formation.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"342 1","pages":"295-298"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75460154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966423
C. Cobianu, I. Georgescu, Stuart Heath, Michael Hughes, F. Haran
In this work we present novel coupling devices, in terms of feed-throughs and launchers, which are able to increase the efficiency of the electromagnetic power transmission along the propagation chain of guided wave radar (GWR) transmitters for level and interface measurement. The novel concepts are validated by 2D 1COMSOL® axisymmetric simulations which prove that the innovative design improvements are able to increase the electromagnetic efficiency by at least 6 dB. Such novel GWR level transmitters can improve the accuracy and the measurement range of the next generation of GWR level transmitters.
{"title":"High efficiency coupling devices for guided wave radar-based level sensors","authors":"C. Cobianu, I. Georgescu, Stuart Heath, Michael Hughes, F. Haran","doi":"10.1109/SMICND.2014.6966423","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966423","url":null,"abstract":"In this work we present novel coupling devices, in terms of feed-throughs and launchers, which are able to increase the efficiency of the electromagnetic power transmission along the propagation chain of guided wave radar (GWR) transmitters for level and interface measurement. The novel concepts are validated by 2D 1COMSOL® axisymmetric simulations which prove that the innovative design improvements are able to increase the electromagnetic efficiency by at least 6 dB. Such novel GWR level transmitters can improve the accuracy and the measurement range of the next generation of GWR level transmitters.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"37 1","pages":"163-166"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78611155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966395
N. Țigău, S. Condurache-Bota
In this work, the effect of the thermal annealing on the structural and optical properties of antimony trisulfide (Sb2S3) thin films deposited by thermal evaporation onto glass substrates held at 293 K was studied. Sb2S3 thin films were annealed at 500 K for 1 h in vacuum. Their structural properties have studied by transmission electron microscopy (TEM). The TEM analysis showed that the as-deposited Sb2S3 thin films have been an amorphous structure, while after annealing treatment, they become polycrystalline in structure. The optical constants of Sb2S3 thin films as refractive index, n, and absorption coefficient, α, were obtained from the analysis of the experimental recorded spectral transmission data over the wavelength range of 500-1400 nm. From the photon energy dependence of absorption coefficient, the optical band gap energy, Eg, was calculated for both the as-deposited and annealed Sb2S3 thin films.
{"title":"Effect of thermal annealing in vacuum on the structural and optical properties of Sb2S3 thin films","authors":"N. Țigău, S. Condurache-Bota","doi":"10.1109/SMICND.2014.6966395","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966395","url":null,"abstract":"In this work, the effect of the thermal annealing on the structural and optical properties of antimony trisulfide (Sb<sub>2</sub>S<sub>3</sub>) thin films deposited by thermal evaporation onto glass substrates held at 293 K was studied. Sb<sub>2</sub>S<sub>3</sub> thin films were annealed at 500 K for 1 h in vacuum. Their structural properties have studied by transmission electron microscopy (TEM). The TEM analysis showed that the as-deposited Sb<sub>2</sub>S<sub>3</sub> thin films have been an amorphous structure, while after annealing treatment, they become polycrystalline in structure. The optical constants of Sb<sub>2</sub>S<sub>3</sub> thin films as refractive index, n, and absorption coefficient, α, were obtained from the analysis of the experimental recorded spectral transmission data over the wavelength range of 500-1400 nm. From the photon energy dependence of absorption coefficient, the optical band gap energy, E<sub>g</sub>, was calculated for both the as-deposited and annealed Sb<sub>2</sub>S<sub>3</sub> thin films.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"30 1","pages":"73-76"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74658798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/SMICND.2014.6966387
M. Aldrigo, M. Dragoman
In the last years, MEMS switches have been gathering an increasing interest for their exploitation in several electrostatic and RF applications. In this paper we discuss about the enhancement of dielectric's reliability in MEMS by embedding an array of Carbon Nanotubes (CNTs) which allows the reducing of the breakdown threshold and, hence, to improve the device capabilities even in presence of high actuation voltages.
{"title":"Reducing dielectric breakdown in MEMS switches via a CNTs array embedded in a Si3N4 substrate","authors":"M. Aldrigo, M. Dragoman","doi":"10.1109/SMICND.2014.6966387","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966387","url":null,"abstract":"In the last years, MEMS switches have been gathering an increasing interest for their exploitation in several electrostatic and RF applications. In this paper we discuss about the enhancement of dielectric's reliability in MEMS by embedding an array of Carbon Nanotubes (CNTs) which allows the reducing of the breakdown threshold and, hence, to improve the device capabilities even in presence of high actuation voltages.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"18 1","pages":"47-50"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78096996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966417
C. Florin, A. Dinescu, M. Purica
Structural modification of graphene after direct electron beam irradiation (acceleration voltages of 3 kV and 5 kV and exposure doses 200, 400, 800 μC/cm2) has been investigated by using micro-Raman spectroscopy. The amplitudes ratio - ID/IG and I2D/IG versus exposure doses for each acceleration voltage extracted from Raman spectra acquisitions with red laser (633 nm) are evidencing the increasing degradation of single layer graphene at low exposure doses.
{"title":"Raman spectroscopy investigation of electron beam irradiated graphene","authors":"C. Florin, A. Dinescu, M. Purica","doi":"10.1109/SMICND.2014.6966417","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966417","url":null,"abstract":"Structural modification of graphene after direct electron beam irradiation (acceleration voltages of 3 kV and 5 kV and exposure doses 200, 400, 800 μC/cm<sup>2</sup>) has been investigated by using micro-Raman spectroscopy. The amplitudes ratio - I<sub>D</sub>/I<sub>G</sub> and I<sub>2D</sub>/I<sub>G</sub> versus exposure doses for each acceleration voltage extracted from Raman spectra acquisitions with red laser (633 nm) are evidencing the increasing degradation of single layer graphene at low exposure doses.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"26 1","pages":"143-146"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75870011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966400
S. Condurache-Bota, C. Constantinescu, M. Praisler, V. Tiron, N. Țigău, C. Gheorghieș
Pulsed laser deposition (PLD) proves to be successful for the preparation of bismuth oxide films, by using pure bismuth targets and oxygen atmosphere inside the ablation chamber. This paper proves that the wavelength and the number of laser pulses strongly influence the structure, morphology and optical properties of the films.
{"title":"The influence of laser wavelength and pulses number on the structure and the optical properties of pulsed laser-deposited bismuth oxide thin films","authors":"S. Condurache-Bota, C. Constantinescu, M. Praisler, V. Tiron, N. Țigău, C. Gheorghieș","doi":"10.1109/SMICND.2014.6966400","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966400","url":null,"abstract":"Pulsed laser deposition (PLD) proves to be successful for the preparation of bismuth oxide films, by using pure bismuth targets and oxygen atmosphere inside the ablation chamber. This paper proves that the wavelength and the number of laser pulses strongly influence the structure, morphology and optical properties of the films.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"31 1","pages":"87-90"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74965029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966433
J. Postel-Pellerin, P. Chiquet, V. Della Marca, T. Wakrim, G. Just, J. Ogier
In this paper we propose to modify the pulses classically used during the channel-hot-electron programming phase of a Flash memory and to replace it by a sequence of ultra-short pulses in order to decrease the programming window closure observed during the endurance test. We start this work presenting the other solutions published in literature. Then, we describe our advanced measurement setup and finally we show our experimental results. Furthermore we evaluate the impact of these ultra-short pulses on the current consumption during the programming phase.
{"title":"Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses","authors":"J. Postel-Pellerin, P. Chiquet, V. Della Marca, T. Wakrim, G. Just, J. Ogier","doi":"10.1109/SMICND.2014.6966433","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966433","url":null,"abstract":"In this paper we propose to modify the pulses classically used during the channel-hot-electron programming phase of a Flash memory and to replace it by a sequence of ultra-short pulses in order to decrease the programming window closure observed during the endurance test. We start this work presenting the other solutions published in literature. Then, we describe our advanced measurement setup and finally we show our experimental results. Furthermore we evaluate the impact of these ultra-short pulses on the current consumption during the programming phase.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"10 1","pages":"197-200"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90960160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966457
T. Sandu
Usually, fluorescence of a two-level system increases with the coupling strength to an electromagnetic field. However, we show numerically that the fluorescence is quenched in the ultra-strong coupling limit of a two-level system interacting with an electromagnetic field. This behavior is attributed to the onset of multi-photon processes which occur for the ultra-strong coupling between the two-level system and the electromagnetic field.
{"title":"Fluorescence and fluorescence quenching in a two-level system","authors":"T. Sandu","doi":"10.1109/SMICND.2014.6966457","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966457","url":null,"abstract":"Usually, fluorescence of a two-level system increases with the coupling strength to an electromagnetic field. However, we show numerically that the fluorescence is quenched in the ultra-strong coupling limit of a two-level system interacting with an electromagnetic field. This behavior is attributed to the onset of multi-photon processes which occur for the ultra-strong coupling between the two-level system and the electromagnetic field.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"19 1","pages":"269-272"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87613710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966425
S. Simion, G. Bartolucci
Single-ended dual-fed distributed amplifier (SEDFDA) based balanced amplifier is analyzed and the layout is designed. The gate and drain artificial lines are realized with Composite Right-/Left-Handed (CRLH) phase shifters, having convenient topology for transistor connection. The amplifier design takes into account the catalog S-parameters of the transistors.
{"title":"Design considerations on balanced CRLH single-ended dual-fed distributed amplifier","authors":"S. Simion, G. Bartolucci","doi":"10.1109/SMICND.2014.6966425","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966425","url":null,"abstract":"Single-ended dual-fed distributed amplifier (SEDFDA) based balanced amplifier is analyzed and the layout is designed. The gate and drain artificial lines are realized with Composite Right-/Left-Handed (CRLH) phase shifters, having convenient topology for transistor connection. The amplifier design takes into account the catalog S-parameters of the transistors.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"25 1","pages":"171-174"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84082348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/SMICND.2014.6966390
C. Palade, A. Slav, A. Lepadatu, V. Teodorescu, M. Ciurea
We report on the charge storage properties of trilayer structures consisting in sputtered gate HfO2/co-sputtered Ge-HfO2 layer/rapid thermal tunneling SiO2 oxide. Investigations of transmission electron microscopy and X-ray diffraction evidence the formation of HfO2 with mixed structure of monoclinic and tetragonal in the annealed structures. Capacitance-voltage (C-V) characteristics were measured on Al/HfO2/Ge-HfO2/SiO2/Si/Al metal-oxide-semiconductor capacitors based on as-deposited and annealed structures. Large C-V hysteresis is observed for the as-deposited structures and is controlled by traps present in oxide and interface. The annealing yields a C-V hysteresis with smaller memory window being due to injected charges in Ge nanocrystals.
{"title":"Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures","authors":"C. Palade, A. Slav, A. Lepadatu, V. Teodorescu, M. Ciurea","doi":"10.1109/SMICND.2014.6966390","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966390","url":null,"abstract":"We report on the charge storage properties of trilayer structures consisting in sputtered gate HfO2/co-sputtered Ge-HfO2 layer/rapid thermal tunneling SiO2 oxide. Investigations of transmission electron microscopy and X-ray diffraction evidence the formation of HfO2 with mixed structure of monoclinic and tetragonal in the annealed structures. Capacitance-voltage (C-V) characteristics were measured on Al/HfO2/Ge-HfO2/SiO2/Si/Al metal-oxide-semiconductor capacitors based on as-deposited and annealed structures. Large C-V hysteresis is observed for the as-deposited structures and is controlled by traps present in oxide and interface. The annealing yields a C-V hysteresis with smaller memory window being due to injected charges in Ge nanocrystals.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"7 1","pages":"59-62"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81050340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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