Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116260
B. M. Kurade, Nidhin Prasad, G. T. Raja, S. Varshney
We propose an extremely large mode-area compact hybrid multi-trench fiber with ∼40μm core at 1064nm. High-index arc in trench helps to achieve modearea of 1300μm2 at a practical bending radius of 7.5cm. Resonant rings and trench gaps maintain effectively single-mode operation and bending loss constraints.
{"title":"Extremely large mode-area compact hybrid multi-trench fiber with controlled leakage loss","authors":"B. M. Kurade, Nidhin Prasad, G. T. Raja, S. Varshney","doi":"10.1109/IPCON.2017.8116260","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116260","url":null,"abstract":"We propose an extremely large mode-area compact hybrid multi-trench fiber with ∼40μm core at 1064nm. High-index arc in trench helps to achieve modearea of 1300μm2 at a practical bending radius of 7.5cm. Resonant rings and trench gaps maintain effectively single-mode operation and bending loss constraints.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"15 1","pages":"639-640"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74875606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116071
J. McKinney, Ross T. Schermar
Photonic sampling techniques for wideband signal detection have gained substantial interest in recent history. This talk will detail work at the U.S. Naval Research Laboratory in using sub-Nyquist sampled optical links to achieve signal detection and disambiguation across a > 40 GHz instantaneous bandwidth.
{"title":"Sub-sampled optical techniques for wideband spectral monitoring","authors":"J. McKinney, Ross T. Schermar","doi":"10.1109/IPCON.2017.8116071","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116071","url":null,"abstract":"Photonic sampling techniques for wideband signal detection have gained substantial interest in recent history. This talk will detail work at the U.S. Naval Research Laboratory in using sub-Nyquist sampled optical links to achieve signal detection and disambiguation across a > 40 GHz instantaneous bandwidth.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"35 1","pages":"205-206"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74496814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116136
S. K. Sahoo, D. Tang, Cuong Dang
We demonstrated a single-shot high-resolution color-imaging technique through scattering media using a monochromatic camera. This novel approach is enabled by the spectral-decorrelation property and the optical memory-effect of the scattering media. We used deconvolution for imaging, which bypasses cumbersome iterative refocusing, scanning or phase-retrieval procedures.
{"title":"Single shot color imaging through scattering media using a monochromatic camera","authors":"S. K. Sahoo, D. Tang, Cuong Dang","doi":"10.1109/IPCON.2017.8116136","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116136","url":null,"abstract":"We demonstrated a single-shot high-resolution color-imaging technique through scattering media using a monochromatic camera. This novel approach is enabled by the spectral-decorrelation property and the optical memory-effect of the scattering media. We used deconvolution for imaging, which bypasses cumbersome iterative refocusing, scanning or phase-retrieval procedures.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"2 1","pages":"353-354"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74597431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116218
Tao Jiang, M. Tang, R. Lin
Traditional OFDM techniques in VLC suffer from high PAPR and serious clipping distortion. In this paper, we propose a Precoded-DC-Biased Optical OFDM technique for VLC system. Numerical simulations are presented, proving substantial benefits in terms of PAPR and BER.
{"title":"Precoded-DC-biased optical OFDM system for visible light communications","authors":"Tao Jiang, M. Tang, R. Lin","doi":"10.1109/IPCON.2017.8116218","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116218","url":null,"abstract":"Traditional OFDM techniques in VLC suffer from high PAPR and serious clipping distortion. In this paper, we propose a Precoded-DC-Biased Optical OFDM technique for VLC system. Numerical simulations are presented, proving substantial benefits in terms of PAPR and BER.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"60 1","pages":"549-550"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77184093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116066
R. B. Ramirez, M. Plascak, K. Bagnell, A. Bhardwaj, J. Ferrara, G. Hoefler, Ming C. Wu, P. Delfyett
We report the stabilization of a 10 GHz monolithic passively mode-locked laser using a novel combination of multitone injection locking and regenerative mode-locking via optoelectronic loop. Comb-teeth linewidths are narrowed by 4000x and repetition rate is stabilized to better than 10−10/τ at 1 second.
{"title":"Regenerative multi-tone injection locking for linewidth enhancement and repetition rate stabilization of a PIC mode-locked laser","authors":"R. B. Ramirez, M. Plascak, K. Bagnell, A. Bhardwaj, J. Ferrara, G. Hoefler, Ming C. Wu, P. Delfyett","doi":"10.1109/IPCON.2017.8116066","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116066","url":null,"abstract":"We report the stabilization of a 10 GHz monolithic passively mode-locked laser using a novel combination of multitone injection locking and regenerative mode-locking via optoelectronic loop. Comb-teeth linewidths are narrowed by 4000x and repetition rate is stabilized to better than 10−10/τ at 1 second.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"41 1","pages":"195-196"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77557479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116108
H. Melkonyan, K. Sloyan, Paulo Moreira, M. Dahlem
We fabricate a gradient-index lens on the end facet of an optical fiber by focused ion beam. At 1550 nm, the lens generates a 2.2 μm spot at a working distance of 4.2 μm. This lens can be used for efficient edge-coupling into optical chip.
{"title":"Fabrication of a gradient-index optical fiber lens by focused ion beam","authors":"H. Melkonyan, K. Sloyan, Paulo Moreira, M. Dahlem","doi":"10.1109/IPCON.2017.8116108","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116108","url":null,"abstract":"We fabricate a gradient-index lens on the end facet of an optical fiber by focused ion beam. At 1550 nm, the lens generates a 2.2 μm spot at a working distance of 4.2 μm. This lens can be used for efficient edge-coupling into optical chip.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"43 1","pages":"285-286"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77739132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116166
C. Grein
The modeling of molecular beam epitaxial (MBE) growth has potential benefits in identifying optimal growth conditions and predicting atomic-scale defects that may form in actual growth. We describe the use of simulation software to conduct realistic atomic-scale MBE growth simulations of Type II infrared superlattices.
{"title":"Simulation of molecular beam epitaxy type II infrared superlattice growth","authors":"C. Grein","doi":"10.1109/IPCON.2017.8116166","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116166","url":null,"abstract":"The modeling of molecular beam epitaxial (MBE) growth has potential benefits in identifying optimal growth conditions and predicting atomic-scale defects that may form in actual growth. We describe the use of simulation software to conduct realistic atomic-scale MBE growth simulations of Type II infrared superlattices.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"23 1","pages":"417-417"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78198951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116092
S. Haffouz, D. Dalacu, P. Poole, K. Mnaymneh, J. Lapointe, G. Aers, D. Poltras, R. Williams
Non-classical light sources that can produce streams of correlated on-demand photons are a central building block for optics based quantum information technologies. There are numerous possible approaches for producing such a light source. One of the most promising is the solid-state single photon source based on a single quantum dot in III-V semiconductors. Utilizing a single InAs quantum dot in an InP nanowire, we previously demonstrated a bright and efficient source for single photons [1] and entangled photon pairs [2] that emits around 950 nm. In order to interface with telecom systems, single photon sources emitting at longer wavelengths are required. A few works have extended the emission to the telecom band using a single InAs/InP quantum dot in a micro-cavity [3-4]. However, improving the source brightness and the extraction efficiency remains a challenging task. In this contribution, by modifying the growth conditions and the pre-growth pattern for an InAs dot in an InP nanowire, we demonstrate a bright light source that emits in the telecom O-band, an important step towards the demonstration of a single photon source.
{"title":"Bright single InAs quantum dots at telecom wavelengths in site-selective InP nanowires","authors":"S. Haffouz, D. Dalacu, P. Poole, K. Mnaymneh, J. Lapointe, G. Aers, D. Poltras, R. Williams","doi":"10.1109/IPCON.2017.8116092","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116092","url":null,"abstract":"Non-classical light sources that can produce streams of correlated on-demand photons are a central building block for optics based quantum information technologies. There are numerous possible approaches for producing such a light source. One of the most promising is the solid-state single photon source based on a single quantum dot in III-V semiconductors. Utilizing a single InAs quantum dot in an InP nanowire, we previously demonstrated a bright and efficient source for single photons [1] and entangled photon pairs [2] that emits around 950 nm. In order to interface with telecom systems, single photon sources emitting at longer wavelengths are required. A few works have extended the emission to the telecom band using a single InAs/InP quantum dot in a micro-cavity [3-4]. However, improving the source brightness and the extraction efficiency remains a challenging task. In this contribution, by modifying the growth conditions and the pre-growth pattern for an InAs dot in an InP nanowire, we demonstrate a bright light source that emits in the telecom O-band, an important step towards the demonstration of a single photon source.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"86 1-2 1","pages":"253-254"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78051042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116160
Honghyuk Kim, Wei Wei, T. Kuech, P. Gopalan, L. Mawst
Semiconductor Laser diodes (LD) employing quantum dot (QD) active regions have attracted attention due to the theoretical predictions: low threshold current density and low temperature sensitivity originated from the delta-function-like density of states and small active volume [1]. However, while high performance devices have been demonstrated, the realization of all the predicted advantages has remained challenging. Self-assembled QDs grown by Stranski-Krastanov (SK) growth mode can suffer from an inhomogeneity in the QD size distribution, as well as an inherent wetting layer [2]. Nanopatterning and selective metalorganic chemical vapor deposition (MOCVD) growth offer a more controllable pathway for QD formation, allowing the QD size to be decoupled from the strain state of the material. This process results in the formation of dense arrays of wetting-layer-free QDs, although the challenges stemming from surface state formation and efficient carrier injection into the QDs remain problematic issues [3]. As such, previously reported LDs employing these In0.3Ga0.7As QD active regions only operate at low temperatures [3]. It has been contended that embedding the SK QDs within an InGaAs quantum well (QW) improves carrier capture into the quantum dots [4]. Here, we demonstrate an In0.1Ga0.9As QW placed adjacent to a wetting layer-free InAs QD active region leads to improved active region carrier collection, allowing for room temperature (RT) lasing. The LDs employ an active region consisting of a dense single-layer array of compressively-strained InAs QDs (Density ∼ 4×1010cm−2), selectively grown by MOCVD on top of a 4nm thick In0.1Ga0.9As QW.
{"title":"Room temperature operation of InAs quantum dot lasers formed by diblock-copolymer lithography and selective area MOCVD growth","authors":"Honghyuk Kim, Wei Wei, T. Kuech, P. Gopalan, L. Mawst","doi":"10.1109/IPCON.2017.8116160","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116160","url":null,"abstract":"Semiconductor Laser diodes (LD) employing quantum dot (QD) active regions have attracted attention due to the theoretical predictions: low threshold current density and low temperature sensitivity originated from the delta-function-like density of states and small active volume [1]. However, while high performance devices have been demonstrated, the realization of all the predicted advantages has remained challenging. Self-assembled QDs grown by Stranski-Krastanov (SK) growth mode can suffer from an inhomogeneity in the QD size distribution, as well as an inherent wetting layer [2]. Nanopatterning and selective metalorganic chemical vapor deposition (MOCVD) growth offer a more controllable pathway for QD formation, allowing the QD size to be decoupled from the strain state of the material. This process results in the formation of dense arrays of wetting-layer-free QDs, although the challenges stemming from surface state formation and efficient carrier injection into the QDs remain problematic issues [3]. As such, previously reported LDs employing these In0.3Ga0.7As QD active regions only operate at low temperatures [3]. It has been contended that embedding the SK QDs within an InGaAs quantum well (QW) improves carrier capture into the quantum dots [4]. Here, we demonstrate an In0.1Ga0.9As QW placed adjacent to a wetting layer-free InAs QD active region leads to improved active region carrier collection, allowing for room temperature (RT) lasing. The LDs employ an active region consisting of a dense single-layer array of compressively-strained InAs QDs (Density ∼ 4×1010cm−2), selectively grown by MOCVD on top of a 4nm thick In0.1Ga0.9As QW.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"33 1","pages":"405-406"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76494600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116215
J. Kjellman, R. Stabile, K. Williams
Dual layer, dual width waveguides exhibiting enhanced chromatic dispersion can enable photonic circuits for ultrafast optical pulses. With common tools and processes we here demonstrate the creation of the necessary waveguide geometry. 2.6 dB cm−1 shallow waveguide losses validate our process strategy.
具有增强色散的双层双宽波导可以实现超快光脉冲的光子电路。使用常见的工具和过程，我们在这里演示必要的波导几何形状的创建。2.6 dB cm−1的浅波导损耗验证了我们的工艺策略。
{"title":"Fabrication of dual layer, dual width waveguides for dispersion engineered InP photonic circuits","authors":"J. Kjellman, R. Stabile, K. Williams","doi":"10.1109/IPCON.2017.8116215","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116215","url":null,"abstract":"Dual layer, dual width waveguides exhibiting enhanced chromatic dispersion can enable photonic circuits for ultrafast optical pulses. With common tools and processes we here demonstrate the creation of the necessary waveguide geometry. 2.6 dB cm−1 shallow waveguide losses validate our process strategy.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"49 1","pages":"543-544"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79771937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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