Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206480
V. Sumanth, Manish, S. Chanu, R. Sonkar
In recent years, there has been a rise in interest in mid-infrared (mid-IR) silicon photonics. This paper investigates the single-mode condition, mode confinement, and scattering loss for silicon-on-insulator (SOI), silicon-on-nitride (SON), and silicon-on-sapphire (SOS) waveguides at mid-IR wavelengths (2–5 $mumathrm{m})$. The mode confinement factor is calculated from the effective index method. The Payne-Lacey model is used in the calculation of scattering loss. Scattering loss is low $(< 0.01mathrm{dB}/mathrm{cm})$ for SOI waveguides in the 2-2.5 $mu mathrm{m}$, whereas for SOS it is in the 3–5 $mu mathrm{m}$. SON waveguide has moderate scattering loss through out $2-5mumathrm{m}$. In 2-2.5 wavelengths, SOS has better($>$ 70 %) mode confinement. In 3–5 $mumathrm{m}$ wavelengths, SOI has better confinement.
{"title":"Silicon Waveguides for Mid-infrared Integrated Photonics","authors":"V. Sumanth, Manish, S. Chanu, R. Sonkar","doi":"10.1109/ICP46580.2020.9206480","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206480","url":null,"abstract":"In recent years, there has been a rise in interest in mid-infrared (mid-IR) silicon photonics. This paper investigates the single-mode condition, mode confinement, and scattering loss for silicon-on-insulator (SOI), silicon-on-nitride (SON), and silicon-on-sapphire (SOS) waveguides at mid-IR wavelengths (2–5 $mumathrm{m})$. The mode confinement factor is calculated from the effective index method. The Payne-Lacey model is used in the calculation of scattering loss. Scattering loss is low $(< 0.01mathrm{dB}/mathrm{cm})$ for SOI waveguides in the 2-2.5 $mu mathrm{m}$, whereas for SOS it is in the 3–5 $mu mathrm{m}$. SON waveguide has moderate scattering loss through out $2-5mumathrm{m}$. In 2-2.5 wavelengths, SOS has better($>$ 70 %) mode confinement. In 3–5 $mumathrm{m}$ wavelengths, SOI has better confinement.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"89 1","pages":"103-104"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89028704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206466
Nur Dalilla Nordin, F. Abdullah, M. Zan, A. Ismail, M. Z. Jamaludin, A. Bakar
Fast temperature extraction approach for Brillouin optical time domain analyzer (BOTDA) system using Generalized Linear Model (GLM) is demonstrated experimentally. The training dataset for GLM is designed in order to make it feasible for the measurand extraction. The advantage of using this method is that it is fast as compared to conventional method where the determination of Brillouin frequency shift (BFS) and then translating BFS to temperature or strain can be eliminated. The results of temperature distribution along the fiber between the conventional method and GLM shows comparable accuracy.
{"title":"Fast temperature extraction approach for BOTDA using Generalized Linear Model","authors":"Nur Dalilla Nordin, F. Abdullah, M. Zan, A. Ismail, M. Z. Jamaludin, A. Bakar","doi":"10.1109/ICP46580.2020.9206466","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206466","url":null,"abstract":"Fast temperature extraction approach for Brillouin optical time domain analyzer (BOTDA) system using Generalized Linear Model (GLM) is demonstrated experimentally. The training dataset for GLM is designed in order to make it feasible for the measurand extraction. The advantage of using this method is that it is fast as compared to conventional method where the determination of Brillouin frequency shift (BFS) and then translating BFS to temperature or strain can be eliminated. The results of temperature distribution along the fiber between the conventional method and GLM shows comparable accuracy.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"2 1","pages":"13-14"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89201032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206493
A. Sulaiman, Hariz Asyraff Abdul Latif, F. Abdullah, A. Ismail, M. Z. Jamaludin, N. M. Yusoff
This paper presented an investigation on the effect of hybrid amplifier to multiwavelength fiber laser (MWFL) with in-cavity Lyot filter. The hybrid amplifier comprising semiconductor optical amplifier (SOA) and erbium doped fiber amplifier (EDFA) was used to boost the lasing output peak power. The multiwavelength lasing output has improved by 20 dB, while the extinction ratio (ER) increased to 4 dB when hybrid amplifier was used. The lasing lines remain stable, with a maximum 2.94 dB of power dithering within 100 minutes of observation.
{"title":"Boosting Output Power of Multiwavelength Fiber Laser with Lyot Filter utilizing Hybrid Amplifier","authors":"A. Sulaiman, Hariz Asyraff Abdul Latif, F. Abdullah, A. Ismail, M. Z. Jamaludin, N. M. Yusoff","doi":"10.1109/ICP46580.2020.9206493","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206493","url":null,"abstract":"This paper presented an investigation on the effect of hybrid amplifier to multiwavelength fiber laser (MWFL) with in-cavity Lyot filter. The hybrid amplifier comprising semiconductor optical amplifier (SOA) and erbium doped fiber amplifier (EDFA) was used to boost the lasing output peak power. The multiwavelength lasing output has improved by 20 dB, while the extinction ratio (ER) increased to 4 dB when hybrid amplifier was used. The lasing lines remain stable, with a maximum 2.94 dB of power dithering within 100 minutes of observation.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"40 1","pages":"78-79"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84551641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206489
Rakesh Ranjan, Veer Chandra
A photonic Rib waveguide, based on Aluminium nitride materials over silica platform, has been proposed for very high speed optical interconnect applications. Single mode condition has been discussed for the $mathrm{AIN}-mathrm{on}-mathrm{SiO}_{2}$ Rib waveguide to ensure the fundamental mode propagation. Numerical simulations have been performed in SMC range and the values of propagation delays have been estimated. The results show that the proposed $mathrm{AIN}-mathrm{on}-mathrm{SiO}_{2}$ Rib waveguide can achieve the significantly lower propagation delays in the range of 48.5 ps/cm to 65.23 ps/cm, which is significantly lesser than the reported propagation delays for $mathrm{Si}-mathrm{on}-mathrm{SiO}_{2}$ based Rib waveguides. The fabrication of $mathrm{AIN}-mathrm{on}-mathrm{SiO}_{2}$ based Rib waveguide has been done for the better realization of the proposed Rib waveguide.
{"title":"Simulation and Fabrication of $mathrm{A1N}-mathrm{on}-mathrm{SiO}_{2}$ based Rib Waveguide for Low Propagation Delay","authors":"Rakesh Ranjan, Veer Chandra","doi":"10.1109/ICP46580.2020.9206489","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206489","url":null,"abstract":"A photonic Rib waveguide, based on Aluminium nitride materials over silica platform, has been proposed for very high speed optical interconnect applications. Single mode condition has been discussed for the $mathrm{AIN}-mathrm{on}-mathrm{SiO}_{2}$ Rib waveguide to ensure the fundamental mode propagation. Numerical simulations have been performed in SMC range and the values of propagation delays have been estimated. The results show that the proposed $mathrm{AIN}-mathrm{on}-mathrm{SiO}_{2}$ Rib waveguide can achieve the significantly lower propagation delays in the range of 48.5 ps/cm to 65.23 ps/cm, which is significantly lesser than the reported propagation delays for $mathrm{Si}-mathrm{on}-mathrm{SiO}_{2}$ based Rib waveguides. The fabrication of $mathrm{AIN}-mathrm{on}-mathrm{SiO}_{2}$ based Rib waveguide has been done for the better realization of the proposed Rib waveguide.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"19 1","pages":"76-77"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83521012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206476
S. Dinodiya, B. Suthar, A. Bhargava
A temperature sensor based on a one-dimensional photonic crystal of silicon nitride is proposed. Working principle of the sensor depends upon the change in photonic band gap by variation in refractive index with temperature. In this work, a temperature dependent photonic band structure in SiN/air multilayer system is presented. Simulation results are obtained by applying transfer matrix method.
{"title":"Temperature Sensor based on 1D SiN/Air Photonic Crystal","authors":"S. Dinodiya, B. Suthar, A. Bhargava","doi":"10.1109/ICP46580.2020.9206476","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206476","url":null,"abstract":"A temperature sensor based on a one-dimensional photonic crystal of silicon nitride is proposed. Working principle of the sensor depends upon the change in photonic band gap by variation in refractive index with temperature. In this work, a temperature dependent photonic band structure in SiN/air multilayer system is presented. Simulation results are obtained by applying transfer matrix method.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"13 1","pages":"111-112"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72649716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206498
N. A. N. Jaharudin, N. A. Cholan, Tay Kim Gaik, M. A. Omar, R. Talib, N. Ngajikin, Mohd. Rozaini Abd. Rahim
In this paper, a fiber laser temperature sensor based on fiber Bragg grating (FBG) is demonstrated. The cavity design of this fiber laser utilizes a linear cavity configuration where both ends are provided by a mirror and the FBG. An erbium-doped fiber amplifier is placed in the middle of the cavity for amplification. The 1560 nm FBG is responsible as a sensor head to detect the temperature change. The laser characteristic with the changing temperature is studied in this work with respect to optical-signal-to-noise ratio (OSNR) and 3-dB bandwidth. It is observed that the OSNR and 3-dB bandwidth of the output laser are 49 dB and 0.076 nm respectively at the temperatures of 30°C, 60 °C and 90°C. Hence, the OSNR and 3-dB bandwidth of the laser are not influenced by the temperature change.
{"title":"Characteristics of Fiber Laser based Temperature Sensor","authors":"N. A. N. Jaharudin, N. A. Cholan, Tay Kim Gaik, M. A. Omar, R. Talib, N. Ngajikin, Mohd. Rozaini Abd. Rahim","doi":"10.1109/ICP46580.2020.9206498","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206498","url":null,"abstract":"In this paper, a fiber laser temperature sensor based on fiber Bragg grating (FBG) is demonstrated. The cavity design of this fiber laser utilizes a linear cavity configuration where both ends are provided by a mirror and the FBG. An erbium-doped fiber amplifier is placed in the middle of the cavity for amplification. The 1560 nm FBG is responsible as a sensor head to detect the temperature change. The laser characteristic with the changing temperature is studied in this work with respect to optical-signal-to-noise ratio (OSNR) and 3-dB bandwidth. It is observed that the OSNR and 3-dB bandwidth of the output laser are 49 dB and 0.076 nm respectively at the temperatures of 30°C, 60 °C and 90°C. Hence, the OSNR and 3-dB bandwidth of the laser are not influenced by the temperature change.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"50 1","pages":"32-33"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74680612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/icp46580.2020.9206486
{"title":"Index","authors":"","doi":"10.1109/icp46580.2020.9206486","DOIUrl":"https://doi.org/10.1109/icp46580.2020.9206486","url":null,"abstract":"","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91365858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206462
N. E. A. Razak, D. Berhanuddin, C. Dee, M. Madhuku, B. Majlis
We report the improvement in silicon band-edge emission when defects are deliberately introduced in the lattice structures. Silicon is a poor light-emitter due to its indirect bandgap nature. This paper aims to increase the intensity of the light emission from silicon by implantation of boron which will lead to the formation of dislocation loops between the lattice structures. Prior to that, the silicon samples were implanted with high concentration of carbon. Photoluminescence (PL) measurements were carried out to observe the emission in silicon at near infrared region. The temperatures were varied from 10K to 100K to study the effect of temperature towards the peak luminescence intensity. By observing the PL spectra, there are two main peaks that can be seen at ~1112 nm and 1170 nm. Both peaks show significantly higher intensities in the samples incorporated with boron.
{"title":"Improvement in silicon band edge emission with incorporation of boron","authors":"N. E. A. Razak, D. Berhanuddin, C. Dee, M. Madhuku, B. Majlis","doi":"10.1109/ICP46580.2020.9206462","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206462","url":null,"abstract":"We report the improvement in silicon band-edge emission when defects are deliberately introduced in the lattice structures. Silicon is a poor light-emitter due to its indirect bandgap nature. This paper aims to increase the intensity of the light emission from silicon by implantation of boron which will lead to the formation of dislocation loops between the lattice structures. Prior to that, the silicon samples were implanted with high concentration of carbon. Photoluminescence (PL) measurements were carried out to observe the emission in silicon at near infrared region. The temperatures were varied from 10K to 100K to study the effect of temperature towards the peak luminescence intensity. By observing the PL spectra, there are two main peaks that can be seen at ~1112 nm and 1170 nm. Both peaks show significantly higher intensities in the samples incorporated with boron.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"106 2","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91497499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206487
Wan Emlin Suliza, Wan Abd Rashid, M. Z. Jamaludin, N. A. Rahman, M. Gamel, H. J. Lee, P. Ker
Gallium Antimonide (GaSb) Thermophotovoltaic (TPV) cell is a well-known device for waste-heat harvesting technology. To date, the conversion efficiency of the GaSb TPV cell remains low due to the presence of electrical and spectral losses. In this study, a GaSb TPV cell model is developed using the Silvaco TCAD simulation software. Validation on the simulation model was performed under atmospheric (AM) 1.5 standard test condition (STC) and TPV illumination conditions. Through the validation processes, a set of GaSb physical parameters that are reliable to be used for GaSb TPV cell simulation was established. Under AM1.5 testing condition, the electrical characteristic and performance of GaSb TPV of the reference cell were obtained from an experimental characterization on commercialized devices. A deviation in fill factor and cell efficiency was found between the cell sample and simulation model under AM1.5 illumination. This is due to the presence of resistance losses in the device. Nevertheless, a percentage error of below 3% was achieved under 1200 ° C TPV spectrum. Besides, it was found that a spectral filter that cuts at 2 μm increases the cell efficiency from 11.51% to 19.10% with a power output of 1.33 W/cm2. The finding in this study demonstrates the importance of minimizing the electrical losses and the determination of an optimal filtered spectrum wavelength for developing highperformance GaSb TPV cell.
{"title":"Gallium Antimonide Thermophotovoltaic: Simulation and Electrical Characterization Under Different Spectral Filtration Wavelengths","authors":"Wan Emlin Suliza, Wan Abd Rashid, M. Z. Jamaludin, N. A. Rahman, M. Gamel, H. J. Lee, P. Ker","doi":"10.1109/ICP46580.2020.9206487","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206487","url":null,"abstract":"Gallium Antimonide (GaSb) Thermophotovoltaic (TPV) cell is a well-known device for waste-heat harvesting technology. To date, the conversion efficiency of the GaSb TPV cell remains low due to the presence of electrical and spectral losses. In this study, a GaSb TPV cell model is developed using the Silvaco TCAD simulation software. Validation on the simulation model was performed under atmospheric (AM) 1.5 standard test condition (STC) and TPV illumination conditions. Through the validation processes, a set of GaSb physical parameters that are reliable to be used for GaSb TPV cell simulation was established. Under AM1.5 testing condition, the electrical characteristic and performance of GaSb TPV of the reference cell were obtained from an experimental characterization on commercialized devices. A deviation in fill factor and cell efficiency was found between the cell sample and simulation model under AM1.5 illumination. This is due to the presence of resistance losses in the device. Nevertheless, a percentage error of below 3% was achieved under 1200 ° C TPV spectrum. Besides, it was found that a spectral filter that cuts at 2 μm increases the cell efficiency from 11.51% to 19.10% with a power output of 1.33 W/cm2. The finding in this study demonstrates the importance of minimizing the electrical losses and the determination of an optimal filtered spectrum wavelength for developing highperformance GaSb TPV cell.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"7 1","pages":"44-47"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90205195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1109/ICP46580.2020.9206490
Izaddeen Kabir Yakasai, P. E. Abas, F. Begum
A highly birefringent photonic crystal fibre with elliptical air holes in the core has been proposed and simulated for terahertz wave propagation. Using finite element method with anti-reflective perfectly matched layer, it is shown that the three elliptical air holes in the core are sufficient to produce extremely high birefringence, high power fraction and low transmission losses.
{"title":"Proposal of Highly Birefringent Porous Core Photonic Crystal Fibre for Polarisation Maintaining Terahertz Wave Guidance","authors":"Izaddeen Kabir Yakasai, P. E. Abas, F. Begum","doi":"10.1109/ICP46580.2020.9206490","DOIUrl":"https://doi.org/10.1109/ICP46580.2020.9206490","url":null,"abstract":"A highly birefringent photonic crystal fibre with elliptical air holes in the core has been proposed and simulated for terahertz wave propagation. Using finite element method with anti-reflective perfectly matched layer, it is shown that the three elliptical air holes in the core are sufficient to produce extremely high birefringence, high power fraction and low transmission losses.","PeriodicalId":6758,"journal":{"name":"2020 IEEE 8th International Conference on Photonics (ICP)","volume":"68 1","pages":"60-61"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84987118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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