Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541514
M. Vallone, M. Goano, A. Tibaldi, S. Hanna, D. Eich, A. Wegmann, H. Figgemeier, G. Ghione, F. Bertazzi
The absorption properties of HgCdTe-based infrared detectors can be greatly increased in the mid-infrared band, by incorporating nanostructured plasmonic arrays on the illuminated detector face. The array periodicity, combined with the excitation of surface plasmon-polariton stationary modes, enhances the absorption efficiency by a substantial amount, allowing to reduce in turn the HgCdTe absorption thickness.
{"title":"Plasmonic nanorods for enhanced absorption in mid-wavelength infrared detectors","authors":"M. Vallone, M. Goano, A. Tibaldi, S. Hanna, D. Eich, A. Wegmann, H. Figgemeier, G. Ghione, F. Bertazzi","doi":"10.1109/NUSOD52207.2021.9541514","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541514","url":null,"abstract":"The absorption properties of HgCdTe-based infrared detectors can be greatly increased in the mid-infrared band, by incorporating nanostructured plasmonic arrays on the illuminated detector face. The array periodicity, combined with the excitation of surface plasmon-polariton stationary modes, enhances the absorption efficiency by a substantial amount, allowing to reduce in turn the HgCdTe absorption thickness.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"28 1","pages":"35-36"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87336935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541426
P. Wen, P. Tiwari, K. Moselund, B. Gotsmann
Accurate prediction of thermal effects is important for scaled photonic devices as excessive heating may lead to device failure. This paper addresses numerical modeling of thermal properties of InP nanocavity lasers on Si combined with optical simulations in Lumerical and lasing threshold measurements. Different geometries with diameters ranging from 200 nm to 2 µm are studied, revealing an optimal diameter of around 1000 nm when considering both thermal effects and optical confinement. The temperature profile of the nanocavity lasers reveals that thinning the underlying SiO2 is the most efficient way to improve the thermal properties of the nanocavity lasers.
{"title":"Thermal and optical simulation of InP on Si nanocavity lasers","authors":"P. Wen, P. Tiwari, K. Moselund, B. Gotsmann","doi":"10.1109/NUSOD52207.2021.9541426","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541426","url":null,"abstract":"Accurate prediction of thermal effects is important for scaled photonic devices as excessive heating may lead to device failure. This paper addresses numerical modeling of thermal properties of InP nanocavity lasers on Si combined with optical simulations in Lumerical and lasing threshold measurements. Different geometries with diameters ranging from 200 nm to 2 µm are studied, revealing an optimal diameter of around 1000 nm when considering both thermal effects and optical confinement. The temperature profile of the nanocavity lasers reveals that thinning the underlying SiO2 is the most efficient way to improve the thermal properties of the nanocavity lasers.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"9 1","pages":"77-78"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90513738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541521
B. Alam, A. Ferraro, A. d’Alessandro, R. Caputo, R. Asquini
We analyze the optical scattering properties of an array of Au nano-cylinders fabricated upon an ion-exchanged waveguide. The integrated systems is considered for fluoroscopy and Raman spectroscopy. Absorption, scattering and extinction have been calculated through a combination of Finite Difference Time Domain (FDTD) method and scattering theory. While a portion of the excitation signal interacts with the array, the remaining part flows through the waveguide, enabling areas within the simulation box that complicate the calculation through standard procedures. Our analysis includes adjustments and approximations addressing this issue and making full use of computational capabilities of FDTD.
{"title":"Optical properties of a waveguide-fed plasmonic nano-array through approximated scattering theory","authors":"B. Alam, A. Ferraro, A. d’Alessandro, R. Caputo, R. Asquini","doi":"10.1109/NUSOD52207.2021.9541521","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541521","url":null,"abstract":"We analyze the optical scattering properties of an array of Au nano-cylinders fabricated upon an ion-exchanged waveguide. The integrated systems is considered for fluoroscopy and Raman spectroscopy. Absorption, scattering and extinction have been calculated through a combination of Finite Difference Time Domain (FDTD) method and scattering theory. While a portion of the excitation signal interacts with the array, the remaining part flows through the waveguide, enabling areas within the simulation box that complicate the calculation through standard procedures. Our analysis includes adjustments and approximations addressing this issue and making full use of computational capabilities of FDTD.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"86 1","pages":"23-24"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84017268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1007/s11082-022-04126-4
Da Chen, Ye Liu, Yonglin Yu
{"title":"Understanding the photon-photon resonance of DBR lasers using mode expansion method","authors":"Da Chen, Ye Liu, Yonglin Yu","doi":"10.1007/s11082-022-04126-4","DOIUrl":"https://doi.org/10.1007/s11082-022-04126-4","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"87-88"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72665389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541515
G. Forcade, C. Valdivia, Shengyuan Lu, S. Molesky, Alejandro W. Rodriguez, J. Krich, R. St-Gelais, K. Hinzer
Enormous potential lies in waste-heat recycling for the world’s industrial sector. Portable solid-state modules are a universal low-maintenance method to recycle this waste-heat. One such technology, near-field thermophotovoltaics (NFTPV), relies on a heat source in extreme proximity (<200 nm) to a photovoltaic cell, which then generates electricity. We developed an optoelectronic model where electron-hole pair generation rates are calculated using fluctuation electrodynamics, which we input into an electrical model based in Synopsys TCAD Sentaurus. Using our optoelectronic model, we optimized a novel InAs-based NFTPV device for a 700 K radiator 100 nm away from the PV cell with an efficiency reaching ~17%, more than an order of magnitude higher than current NFTPV device efficiencies.
{"title":"Modeling Efficiency of InAs-Based Near-Field Thermophotovoltaic Devices","authors":"G. Forcade, C. Valdivia, Shengyuan Lu, S. Molesky, Alejandro W. Rodriguez, J. Krich, R. St-Gelais, K. Hinzer","doi":"10.1109/NUSOD52207.2021.9541515","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541515","url":null,"abstract":"Enormous potential lies in waste-heat recycling for the world’s industrial sector. Portable solid-state modules are a universal low-maintenance method to recycle this waste-heat. One such technology, near-field thermophotovoltaics (NFTPV), relies on a heat source in extreme proximity (<200 nm) to a photovoltaic cell, which then generates electricity. We developed an optoelectronic model where electron-hole pair generation rates are calculated using fluctuation electrodynamics, which we input into an electrical model based in Synopsys TCAD Sentaurus. Using our optoelectronic model, we optimized a novel InAs-based NFTPV device for a 700 K radiator 100 nm away from the PV cell with an efficiency reaching ~17%, more than an order of magnitude higher than current NFTPV device efficiencies.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"82 1","pages":"53-54"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72713209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541424
M. Alasio, M. Goano, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, F. Forghieri, G. Ghione, M. Vallone
This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three-dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.
{"title":"Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation","authors":"M. Alasio, M. Goano, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, F. Forghieri, G. Ghione, M. Vallone","doi":"10.1109/NUSOD52207.2021.9541424","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541424","url":null,"abstract":"This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three-dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"53 1","pages":"37-38"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74466501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541432
A. Walker, O. Pitts
Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near the device edge, it is not associated with a significant increase in the photocurrent response.
{"title":"Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes","authors":"A. Walker, O. Pitts","doi":"10.1109/NUSOD52207.2021.9541432","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541432","url":null,"abstract":"Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near the device edge, it is not associated with a significant increase in the photocurrent response.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"289 1","pages":"41-42"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74741001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541499
Wild F. S. Santos, E. Filho, G. Thé
Dual-state emission is an phenomenon which takes place in Quantum Dot Lasers at different temperature and operating conditions. In this study, we investigate that issue from a nonlinear regression model based on Extreme Learning Machine, which revealed to be able to predict the spectrally resolved transient response of InAs/InGaAs quantum dot laser with error performance as low as 0.54%.
{"title":"Dynamic Response Prediction of Bi-State Emission of Quantum Dot Lasers Based on Extreme Learning Machine","authors":"Wild F. S. Santos, E. Filho, G. Thé","doi":"10.1109/NUSOD52207.2021.9541499","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541499","url":null,"abstract":"Dual-state emission is an phenomenon which takes place in Quantum Dot Lasers at different temperature and operating conditions. In this study, we investigate that issue from a nonlinear regression model based on Extreme Learning Machine, which revealed to be able to predict the spectrally resolved transient response of InAs/InGaAs quantum dot laser with error performance as low as 0.54%.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"9 1","pages":"143-144"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81016009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541438
Q. Ding, A. Schenk
The impact of Schottky barrier height (SBH) on the performance of a side-coupled plasmonic waveguide photodetector (WGPD) is theoretically investigated by 3D opto-electrical simulations. A general decrease of the cut-off frequency is observed for all studied barrier heights (0.1 eV to 0.6 eV), most pronounced in the range (0.3 - 0.4) eV. The degradation is an electrostatic effect caused by the formation of the Schottky barrier in the i-region of the device.
{"title":"Performance of Plasmonic Side-Coupled Waveguide Photodetector with Varying Schottky Barrier Height","authors":"Q. Ding, A. Schenk","doi":"10.1109/NUSOD52207.2021.9541438","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541438","url":null,"abstract":"The impact of Schottky barrier height (SBH) on the performance of a side-coupled plasmonic waveguide photodetector (WGPD) is theoretically investigated by 3D opto-electrical simulations. A general decrease of the cut-off frequency is observed for all studied barrier heights (0.1 eV to 0.6 eV), most pronounced in the range (0.3 - 0.4) eV. The degradation is an electrostatic effect caused by the formation of the Schottky barrier in the i-region of the device.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"24 1","pages":"33-34"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79066657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541414
M. Rinderle, A. Gagliardi
Organic semiconductor devices promise cost-efficient processability at low temperatures, but the usually amorphous materials suffer from low charge carrier mobility. The search for high mobility organic semiconductor materials has thrived data science and Machine Learning approaches to screen the vast amount of possible organic materials. We present a multiscale simulation model based on machine learned transfer integrals to compute the charge carrier mobility in organic thin films.
{"title":"Machine Learning & multiscale simulations: toward fast screening of organic semiconductor materials","authors":"M. Rinderle, A. Gagliardi","doi":"10.1109/NUSOD52207.2021.9541414","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541414","url":null,"abstract":"Organic semiconductor devices promise cost-efficient processability at low temperatures, but the usually amorphous materials suffer from low charge carrier mobility. The search for high mobility organic semiconductor materials has thrived data science and Machine Learning approaches to screen the vast amount of possible organic materials. We present a multiscale simulation model based on machine learned transfer integrals to compute the charge carrier mobility in organic thin films.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"25 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80344393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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