Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541520
Runzhang Xie, Weida Hu
Recent researches have proven that HgCdTe is a good material to acquire both high multiplication and low excess noise factor at the same time in avalanche photodiodes (APDs). As a pseudo-binary narrow bandgap semiconductor material, HgCdTe exhibits high conduction band nonparabolicity as well as strong alloy scattering, especially for hot electrons, which changes the dynamics of hot electrons in a fundamental manner. Here, we propose a different scheme to characterize the scattering event and establish the probability theory, spatial description theory, to discuss the dynamics of electrons in HgCdTe APDs with the large nonparabolicity and the strong alloy scattering included. The spatial description theory is then compared with current analytic theory and the Monte Carlo method.
{"title":"Probability Theory of Single-Carrier Avalanche in HgCdTe APDs as a Stochastic Process","authors":"Runzhang Xie, Weida Hu","doi":"10.1109/NUSOD52207.2021.9541520","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541520","url":null,"abstract":"Recent researches have proven that HgCdTe is a good material to acquire both high multiplication and low excess noise factor at the same time in avalanche photodiodes (APDs). As a pseudo-binary narrow bandgap semiconductor material, HgCdTe exhibits high conduction band nonparabolicity as well as strong alloy scattering, especially for hot electrons, which changes the dynamics of hot electrons in a fundamental manner. Here, we propose a different scheme to characterize the scattering event and establish the probability theory, spatial description theory, to discuss the dynamics of electrons in HgCdTe APDs with the large nonparabolicity and the strong alloy scattering included. The spatial description theory is then compared with current analytic theory and the Monte Carlo method.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"30 1","pages":"31-32"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81331877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541475
Daniel Uebach, Thomas Kühler, E. Griese
An integrated directional coupler is designed for a bidirectional communication on a single waveguide by separating both data streams within individual branches. Thereby, an adjustment of the numerical aperture of the transmitting branch is a promising optimization approach. As the couplers are manufactured by a field-assisted diffusion process the numerical aperture is directly related to the exchange ion concentration. The efficiency of the designed coupler and it’s optimization approaches is calculated with a geometrical optics algorithm.
{"title":"Analysis of Concentration Dependencies for an Optical Directional Coupler Design","authors":"Daniel Uebach, Thomas Kühler, E. Griese","doi":"10.1109/NUSOD52207.2021.9541475","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541475","url":null,"abstract":"An integrated directional coupler is designed for a bidirectional communication on a single waveguide by separating both data streams within individual branches. Thereby, an adjustment of the numerical aperture of the transmitting branch is a promising optimization approach. As the couplers are manufactured by a field-assisted diffusion process the numerical aperture is directly related to the exchange ion concentration. The efficiency of the designed coupler and it’s optimization approaches is calculated with a geometrical optics algorithm.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"64 1","pages":"125-126"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81743320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541534
Maik Schwuchow, Christian Wagner, A. Thränhardt
We investigate the photoluminescence of low-dimensional disordered materials, as used e.g. in solar cells, by performing kinetic Monte-Carlo simulations of exciton hopping with periodic boundary conditions. In order to perform numerically efficient calculations, the box length Lbox should be as small as possible while maintaining physically meaningful results during the presence of exciton-exciton-interaction. Exciton-exciton interaction can be approximated by attractive dipole-dipole-interaction in the limit of long distances. We study the convergence of a direct summation approach instead of the Ewald summation technique.
{"title":"Mirror particle effects in kinetic Monte Carlo simulations including Coulomb interaction with periodic boundaries","authors":"Maik Schwuchow, Christian Wagner, A. Thränhardt","doi":"10.1109/NUSOD52207.2021.9541534","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541534","url":null,"abstract":"We investigate the photoluminescence of low-dimensional disordered materials, as used e.g. in solar cells, by performing kinetic Monte-Carlo simulations of exciton hopping with periodic boundary conditions. In order to perform numerically efficient calculations, the box length Lbox should be as small as possible while maintaining physically meaningful results during the presence of exciton-exciton-interaction. Exciton-exciton interaction can be approximated by attractive dipole-dipole-interaction in the limit of long distances. We study the convergence of a direct summation approach instead of the Ewald summation technique.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"141-142"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87016499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541507
Safana Alzoubi, Mohamed Shehata
Optimizing the operating conditions of a Mach-Zhender modulator (MZM) for different design requirements has drawn considerable research interests due to its key role as an electro-optic (EO) interface in hybrid access radio-over-fiber networks. In this work, we compare the modulation efficiency and the bit error rate (BER) performances of single and dual-wavelength-modulated millimeter-wave (MMW) photonic generation techniques which rely on MZMs as EO modulators. Simulation results show that although both techniques are functionally equivalent and possess the same implementation complexity, the dual wavelength modulation of a typical MZM can potentially improve the BER performance by three orders of magnitude compared to the single wavelength approach.
{"title":"Reconfigurability Analysis of Single and Dual Wavelength Millimeter Wave Photonic Generation Techniques","authors":"Safana Alzoubi, Mohamed Shehata","doi":"10.1109/NUSOD52207.2021.9541507","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541507","url":null,"abstract":"Optimizing the operating conditions of a Mach-Zhender modulator (MZM) for different design requirements has drawn considerable research interests due to its key role as an electro-optic (EO) interface in hybrid access radio-over-fiber networks. In this work, we compare the modulation efficiency and the bit error rate (BER) performances of single and dual-wavelength-modulated millimeter-wave (MMW) photonic generation techniques which rely on MZMs as EO modulators. Simulation results show that although both techniques are functionally equivalent and possess the same implementation complexity, the dual wavelength modulation of a typical MZM can potentially improve the BER performance by three orders of magnitude compared to the single wavelength approach.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"49 1","pages":"131-132"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85718193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541465
F. Römer, B. Witzigmann
Due to their small dimensions deep ultraviolet (DUV) light emitting diodes (LED) are highly attractive light sources for environmental and medical applications. DUV LEDs generate light in active quantum wells (QW) made of Aluminium Gallium Nitride. The QWs are not lattice matched to the substrate and only few monolayers thick making them susceptible to compound fluctuations seen through inhomogeneous broadening (IHB). In this work we analyze by means of self consistent carrier transport and luminescence simulations how the IHB affects the electronic operation and emission polarization of DUV LEDs. We demonstrate that the IHB affects both the internal quantum efficiency and the current versus voltage curve of DUV LEDs.
{"title":"Effect of Inhomogeneous Broadening in Deep Ultraviolet Light Emitting Diodes","authors":"F. Römer, B. Witzigmann","doi":"10.1109/NUSOD52207.2021.9541465","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541465","url":null,"abstract":"Due to their small dimensions deep ultraviolet (DUV) light emitting diodes (LED) are highly attractive light sources for environmental and medical applications. DUV LEDs generate light in active quantum wells (QW) made of Aluminium Gallium Nitride. The QWs are not lattice matched to the substrate and only few monolayers thick making them susceptible to compound fluctuations seen through inhomogeneous broadening (IHB). In this work we analyze by means of self consistent carrier transport and luminescence simulations how the IHB affects the electronic operation and emission polarization of DUV LEDs. We demonstrate that the IHB affects both the internal quantum efficiency and the current versus voltage curve of DUV LEDs.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"7 1","pages":"61-62"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84555373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541425
N. M. Razali, S. Ambran, S. Zuikafly, M. Yuzir, H. Sapingi
This paper presents a C-shaped optical fiber sensor for refractive index measurement. The design and simulation of the C-shaped optical fiber were conducted via Wave Optics Module-COMSOL Multiphysics®. The refractive index measurement ranging from 1.30-1.40 is performed. The simulation results showed that the C-shaped design has the potential to act as a refractive index sensor with sensitivity of up to 0.966348101, higher than simulated D-shaped OFS with estimated sensitivity of up to 0.966334412.
{"title":"Design and Simulation of C-Shaped Optical Fiber Sensor","authors":"N. M. Razali, S. Ambran, S. Zuikafly, M. Yuzir, H. Sapingi","doi":"10.1109/NUSOD52207.2021.9541425","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541425","url":null,"abstract":"This paper presents a C-shaped optical fiber sensor for refractive index measurement. The design and simulation of the C-shaped optical fiber were conducted via Wave Optics Module-COMSOL Multiphysics®. The refractive index measurement ranging from 1.30-1.40 is performed. The simulation results showed that the C-shaped design has the potential to act as a refractive index sensor with sensitivity of up to 0.966348101, higher than simulated D-shaped OFS with estimated sensitivity of up to 0.966334412.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"8 1","pages":"109-110"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83657993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541495
Ahna Sharan, J. Kumar
Quantum dot solar cell structures have been theoretically analysed to study the impact of effective capture cross sections on quantum dot generation-recombination processes. The Poisson’s and continuity equation were solved self-consistently to obtain electrostatic potential, electron and hole carrier distribution, and electron filling of the QDs. The occupation probability of the QDs was used to estimate the effective capture cross-sections under different doping and bias condition.
{"title":"Impact of effective capture cross section on generation-recombination rate in InAs/GaAs quantum dot solar cell","authors":"Ahna Sharan, J. Kumar","doi":"10.1109/NUSOD52207.2021.9541495","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541495","url":null,"abstract":"Quantum dot solar cell structures have been theoretically analysed to study the impact of effective capture cross sections on quantum dot generation-recombination processes. The Poisson’s and continuity equation were solved self-consistently to obtain electrostatic potential, electron and hole carrier distribution, and electron filling of the QDs. The occupation probability of the QDs was used to estimate the effective capture cross-sections under different doping and bias condition.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"67 1","pages":"59-60"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82183500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541518
Flavio Cornaggia, B. Alam, A. d’Alessandro, R. Asquini
We numerically investigated a phase shifter based on a polymeric platform by using two different approaches. The device consists of a polymeric slot waveguide covered with an organic liquid crystal cladding, which is a promising configuration for the implementation of polymeric waveguide systems for computation, communication and sensing. Two different nematic liquid crystals have been considered, E7 and 5CB. At first, we have indirectly computed the phase shift through a combination of 2D Finite Element Method with index ellipsoid theory. Then, we have investigated the signal propagation by means of 3D Finite Difference Time Domain Method, which allowed to obtain also the intrinsic propagation loss of the structure and the materials. Although each approach introduces specific approximations and requires different resources, both give similar results and confirm the excellent quality of the device, namely low propagation losses and relevant phase shifting capability.
{"title":"Analysis of a phase shifter based on a slot polymeric waveguide with liquid crystal cladding","authors":"Flavio Cornaggia, B. Alam, A. d’Alessandro, R. Asquini","doi":"10.1109/NUSOD52207.2021.9541518","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541518","url":null,"abstract":"We numerically investigated a phase shifter based on a polymeric platform by using two different approaches. The device consists of a polymeric slot waveguide covered with an organic liquid crystal cladding, which is a promising configuration for the implementation of polymeric waveguide systems for computation, communication and sensing. Two different nematic liquid crystals have been considered, E7 and 5CB. At first, we have indirectly computed the phase shift through a combination of 2D Finite Element Method with index ellipsoid theory. Then, we have investigated the signal propagation by means of 3D Finite Difference Time Domain Method, which allowed to obtain also the intrinsic propagation loss of the structure and the materials. Although each approach introduces specific approximations and requires different resources, both give similar results and confirm the excellent quality of the device, namely low propagation losses and relevant phase shifting capability.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"19 1","pages":"107-108"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86018477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541501
S. Schaefer, Ras-Jeevan K. Obhi, C. Valdivia, K. Hinzer
We discuss the integration of quantum dashes (QDashes) into laser simulations using Crosslight Pics3D, outlining the approach for developing a model featuring asymmetrical active regions. The importance of including wetting layers to accurately represent carrier transport is investigated using results obtained for an InAs/InP QDash laser. While leakage current across the active region is unaffected by the absence of wetting layers, their presence enhances Auger recombination losses in the active region, leading to lower overall device efficiencies.
{"title":"Effect of Wetting Layers on Quantum Dash Laser Operation in Crosslight Pics3D","authors":"S. Schaefer, Ras-Jeevan K. Obhi, C. Valdivia, K. Hinzer","doi":"10.1109/NUSOD52207.2021.9541501","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541501","url":null,"abstract":"We discuss the integration of quantum dashes (QDashes) into laser simulations using Crosslight Pics3D, outlining the approach for developing a model featuring asymmetrical active regions. The importance of including wetting layers to accurately represent carrier transport is investigated using results obtained for an InAs/InP QDash laser. While leakage current across the active region is unaffected by the absence of wetting layers, their presence enhances Auger recombination losses in the active region, leading to lower overall device efficiencies.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"33 1","pages":"81-82"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74971720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541446
Nadia Anam, J. Atai
We investigate the existence and stability of moving solitons a semilinear directional coupler where one core has cubic-quintic nonlinearity and the other core is linear with uniform Bragg grating.
{"title":"Moving Bragg Solitons in a Coupler with Separated Grating and Cubic-Quintic Nonlinearity","authors":"Nadia Anam, J. Atai","doi":"10.1109/NUSOD52207.2021.9541446","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541446","url":null,"abstract":"We investigate the existence and stability of moving solitons a semilinear directional coupler where one core has cubic-quintic nonlinearity and the other core is linear with uniform Bragg grating.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"136 1","pages":"105-106"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73787158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：