Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541462
Jayant Acharya, Sugandham Venkateshh, K. Ghosh
To increase the internal quantum efficiency (IQE) of AlGaN/GaN based multi quantum-well (MQW) UV-C LED, the aluminium composition of barriers and wells in the active region has been engineered. Increase in electron-hole overlap and hence the radiative recombination rate in the final engineered structure has enabled to enhance the IQE by 8%.
{"title":"Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UV-C LED","authors":"Jayant Acharya, Sugandham Venkateshh, K. Ghosh","doi":"10.1109/NUSOD52207.2021.9541462","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541462","url":null,"abstract":"To increase the internal quantum efficiency (IQE) of AlGaN/GaN based multi quantum-well (MQW) UV-C LED, the aluminium composition of barriers and wells in the active region has been engineered. Increase in electron-hole overlap and hence the radiative recombination rate in the final engineered structure has enabled to enhance the IQE by 8%.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"38 1","pages":"69-70"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78680905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541526
U. Höfler, T. Kernetzky, N. Hanik
In We model the third-order material susceptibility $overleftrightarrow chi $[3] in silicon waveguides for integrated optics. Analysis of four- wave mixing in these waveguides requires an in-depth study of material nonlinearity - in contrast to modeling light propagation in fibers with the optical nonlinear Schrödinger equation. We include electronic and atomic lattice (Raman) responses of the material and present a relatively easy-to-use representation of the material susceptibility.
{"title":"Modeling Material Susceptibility in Silicon for Four-Wave Mixing Based Nonlinear Optics","authors":"U. Höfler, T. Kernetzky, N. Hanik","doi":"10.1109/NUSOD52207.2021.9541526","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541526","url":null,"abstract":"In We model the third-order material susceptibility $overleftrightarrow chi $[3] in silicon waveguides for integrated optics. Analysis of four- wave mixing in these waveguides requires an in-depth study of material nonlinearity - in contrast to modeling light propagation in fibers with the optical nonlinear Schrödinger equation. We include electronic and atomic lattice (Raman) responses of the material and present a relatively easy-to-use representation of the material susceptibility.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"40 1","pages":"121-122"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73115782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541445
Hossein Mardani, H. Kaatuzian, Bahram Choupanzadeh
Slow light Transparency window can be achieved with the help of Electromagnetically Induced Transparency (EIT) method and Tunneling Induced Transparency (TIT) method accompanied by observing tunneling effect between InAs quantum dot structure with energy gap of 0.35ev and a thin layer of GaAs potential barrier with energy gap of 1.42ev. By investigating different parameters such as group velocity and Slow Down Factor (SDF) coefficient at different detuning frequencies, we have obtained an improved design in tunneling and identifying some better conditions. Under TIT condition, the SDF parameter has improved to the amount of 3.2 × 106.
{"title":"Design and Analysis of Slow Light Device based on Double Quantum Dots Tunneling Induced Transparency","authors":"Hossein Mardani, H. Kaatuzian, Bahram Choupanzadeh","doi":"10.1109/NUSOD52207.2021.9541445","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541445","url":null,"abstract":"Slow light Transparency window can be achieved with the help of Electromagnetically Induced Transparency (EIT) method and Tunneling Induced Transparency (TIT) method accompanied by observing tunneling effect between InAs quantum dot structure with energy gap of 0.35ev and a thin layer of GaAs potential barrier with energy gap of 1.42ev. By investigating different parameters such as group velocity and Slow Down Factor (SDF) coefficient at different detuning frequencies, we have obtained an improved design in tunneling and identifying some better conditions. Under TIT condition, the SDF parameter has improved to the amount of 3.2 × 106.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"9 1","pages":"11-12"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74042193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541491
Vahram Voskerchyan, Yu Tian, F. Soares, F. Diaz-Otero
In this paper three types of Silicon Photonics OPA architectures are proposed and investigated. Edge-fire optical phased array, that simplifies the design of the OPA. Second architecture is OPA with grating coupler antennas. Maximum steering angle for edge-fire OPA is ±44°, FWHM is 0.10986°. For GC OPA steering angle is ±20° and FWHM=1.003116°. Third architecture is the Slanted Grating Coupler with a FOV of 100°.
{"title":"Flexible and Highly Scalable LiDAR for an FMCW LiDAR PIC based on Grating Couplers","authors":"Vahram Voskerchyan, Yu Tian, F. Soares, F. Diaz-Otero","doi":"10.1109/NUSOD52207.2021.9541491","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541491","url":null,"abstract":"In this paper three types of Silicon Photonics OPA architectures are proposed and investigated. Edge-fire optical phased array, that simplifies the design of the OPA. Second architecture is OPA with grating coupler antennas. Maximum steering angle for edge-fire OPA is ±44°, FWHM is 0.10986°. For GC OPA steering angle is ±20° and FWHM=1.003116°. Third architecture is the Slanted Grating Coupler with a FOV of 100°.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"93 1","pages":"119-120"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74543883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541464
Francesco Villasmunta, P. Steglich, S. Schrader, H. Schenk, A. Mai
Optical interconnections are a promising step for-ward to overcome the intrinsic limitations of electrical inter-connections in integrated circuits. In this work, we present a finite element method (FEM) simulation study of a dielectric waveguide etched through the full thickness of a silicon substrate. In particular, it is investigated the effect of the bridge-to-core size ratio on the first two supported modes. Then, the influence of the waveguide sidewalls tapering angle on the three-dimensional beam propagation is studied. Such optical through-silicon waveguide (OTSW), if nonadiabatically tapered can provide effective mode size conversion and favour the coupling of external light sources to photonic integrated circuits.
{"title":"Numerical Simulation of Optical Through-Silicon Waveguide for 3D Photonic Interconnections","authors":"Francesco Villasmunta, P. Steglich, S. Schrader, H. Schenk, A. Mai","doi":"10.1109/NUSOD52207.2021.9541464","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541464","url":null,"abstract":"Optical interconnections are a promising step for-ward to overcome the intrinsic limitations of electrical inter-connections in integrated circuits. In this work, we present a finite element method (FEM) simulation study of a dielectric waveguide etched through the full thickness of a silicon substrate. In particular, it is investigated the effect of the bridge-to-core size ratio on the first two supported modes. Then, the influence of the waveguide sidewalls tapering angle on the three-dimensional beam propagation is studied. Such optical through-silicon waveguide (OTSW), if nonadiabatically tapered can provide effective mode size conversion and favour the coupling of external light sources to photonic integrated circuits.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"30 1","pages":"115-116"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89103281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541479
Cónal Murphy, E. O’Reilly, C. Broderick
Solving the multi-band k•p Schrödinger equation for a quantum-confined heterostructure using a reciprocal space plane wave approach presents several advantages compared to conventional real space approaches such as the finite difference or element methods. In addition to allowing analytical derivation of the heterostructure Hamiltonian, a desired level of accuracy in the computed eigenstates can generally be achieved using significantly reduced basis set size compared to equivalent real space calculations. This reduces the size of the Hamiltonian matrix that must be diagonalised to compute the electronic structure, thereby accelerating numerical calculations. Here, we demonstrate how the built-in periodicity of plane waves also allows to efficiently compute – for an arbitrary multi-band k•p Hamiltonian – superlattice (SL) miniband structure, using a calculational supercell consisting only of a single SL period. As an example we analyse the origin of the high radiative recombination rate in "broken-gap" InAs/GaSb SLs, of interest for applications in mid-infrared inter-band cascade light-emitting diodes.
{"title":"Efficient multi-band k•p calculations of superlattice electronic and optical properties using plane waves","authors":"Cónal Murphy, E. O’Reilly, C. Broderick","doi":"10.1109/NUSOD52207.2021.9541479","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541479","url":null,"abstract":"Solving the multi-band k•p Schrödinger equation for a quantum-confined heterostructure using a reciprocal space plane wave approach presents several advantages compared to conventional real space approaches such as the finite difference or element methods. In addition to allowing analytical derivation of the heterostructure Hamiltonian, a desired level of accuracy in the computed eigenstates can generally be achieved using significantly reduced basis set size compared to equivalent real space calculations. This reduces the size of the Hamiltonian matrix that must be diagonalised to compute the electronic structure, thereby accelerating numerical calculations. Here, we demonstrate how the built-in periodicity of plane waves also allows to efficiently compute – for an arbitrary multi-band k•p Hamiltonian – superlattice (SL) miniband structure, using a calculational supercell consisting only of a single SL period. As an example we analyse the origin of the high radiative recombination rate in \"broken-gap\" InAs/GaSb SLs, of interest for applications in mid-infrared inter-band cascade light-emitting diodes.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"546 1","pages":"137-138"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86970749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541512
Mailson G. Da Silva, G. N. Malheiros-Silveira
We applied the Artificial Bee Colony algorithm for the complete band gap maximization of a two-dimensional photonic crystal. The band diagram and band gap calculation were carried out by the software MIT Photonic Bands, and these results were used in the algorithm’s fitness function. The optimum structure was compared to the literature which used genetic algorithm, and it was observed a raise in the complete band gap of the photonic crystal.
{"title":"Optimization of Two-Dimensional Photonic Crystals with Artificial Bee Colony Algorithm","authors":"Mailson G. Da Silva, G. N. Malheiros-Silveira","doi":"10.1109/NUSOD52207.2021.9541512","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541512","url":null,"abstract":"We applied the Artificial Bee Colony algorithm for the complete band gap maximization of a two-dimensional photonic crystal. The band diagram and band gap calculation were carried out by the software MIT Photonic Bands, and these results were used in the algorithm’s fitness function. The optimum structure was compared to the literature which used genetic algorithm, and it was observed a raise in the complete band gap of the photonic crystal.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"46 1","pages":"147-148"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89654303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541524
J. Piprek, M. Siekacz, G. Muzioł, C. Skierbiszewski
Worldwide research efforts have been focusing on quantum efficiency enhancements of GaN-based light emitters. A promising approach is the separation of multiple active regions by tunnel junctions, enabling electron-hole pairs to generate more than one photon. Utilizing advanced numerical device simulation, we here analyze internal physics and performance limitations of such InGaN/GaN bipolar cascade laser which recently demonstrated superior slope efficiency.
{"title":"GaN-based bipolar cascade laser exceeding 100% differential quantum efficiency","authors":"J. Piprek, M. Siekacz, G. Muzioł, C. Skierbiszewski","doi":"10.1109/NUSOD52207.2021.9541524","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541524","url":null,"abstract":"Worldwide research efforts have been focusing on quantum efficiency enhancements of GaN-based light emitters. A promising approach is the separation of multiple active regions by tunnel junctions, enabling electron-hole pairs to generate more than one photon. Utilizing advanced numerical device simulation, we here analyze internal physics and performance limitations of such InGaN/GaN bipolar cascade laser which recently demonstrated superior slope efficiency.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"18 3 1","pages":"75-76"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76806901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541453
A. D. Vito, A. Pecchia, M. A. der Maur, A. Di Carlo
Very recent photoluminescence studies, investigating the tetragonal-to-orthorhombic phase transition of MAPbI3, demonstrated the presence of residual tetragonal phase far below the transition temperature, yielding spectral signatures from quantum confined tetragonal domains. We present a theoretical model of the coexistence of tetragonal and orthorhombic MAPbI3, based on tight binding simulations. The tight binding parameters are derived by particle swarm optimization and the band-offset between the two crystals is obtained by first-principles calculations. The impact of the tetragonal domain dimension on the optical properties of MAPbI3 is discussed.
{"title":"Tight binding simulations of tetragonal MAPbI3 domains within orthorhombic phase","authors":"A. D. Vito, A. Pecchia, M. A. der Maur, A. Di Carlo","doi":"10.1109/NUSOD52207.2021.9541453","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541453","url":null,"abstract":"Very recent photoluminescence studies, investigating the tetragonal-to-orthorhombic phase transition of MAPbI3, demonstrated the presence of residual tetragonal phase far below the transition temperature, yielding spectral signatures from quantum confined tetragonal domains. We present a theoretical model of the coexistence of tetragonal and orthorhombic MAPbI3, based on tight binding simulations. The tight binding parameters are derived by particle swarm optimization and the band-offset between the two crystals is obtained by first-principles calculations. The impact of the tetragonal domain dimension on the optical properties of MAPbI3 is discussed.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"54 1","pages":"3-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89955713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541496
V. Wangkheirakpam, B. Bhowmick, P. Pukhrambam
This article reports a highly sensitive and low power photosensor using dual MOSCAP Vertical TFET for near infrared light detection in the wavelength range 0.7µm to 1µm. The optical voltage (VOP) developed because of the photogeneration occurring within the gate region enhances the gate control over the channel and produces higher drain current. The sensitivity is calculated by measuring the alteration of drain current with wavelength. Peak sensitivity of the order of 105 is obtained at VGS=0.5V and provides a maximum responsivity of 1.6x103 A/W at VGS=1.5V for λ= 0.7μm. This modified TFET based hybrid photosensor can be a new generation of highly sensitive photosensor.
本文报道了一种采用双MOSCAP垂直TFET的高灵敏度低功耗光传感器，用于检测波长范围为0.7µm至1µm的近红外光。由于在栅极区域内发生的光发生而产生的光电压(VOP)增强了栅极对通道的控制并产生更高的漏极电流。通过测量漏极电流随波长的变化来计算灵敏度。在VGS=0.5V时获得了105级的峰值灵敏度，在VGS=1.5V时λ= 0.7μm的最大响应度为1.6x103 a /W。这种改进的基于TFET的混合式光敏器是新一代高灵敏度的光敏器。
{"title":"Near Infra-red Photosensor using Optically Gated D-MOS Vertical TFET","authors":"V. Wangkheirakpam, B. Bhowmick, P. Pukhrambam","doi":"10.1109/NUSOD52207.2021.9541496","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541496","url":null,"abstract":"This article reports a highly sensitive and low power photosensor using dual MOSCAP Vertical TFET for near infrared light detection in the wavelength range 0.7µm to 1µm. The optical voltage (VOP) developed because of the photogeneration occurring within the gate region enhances the gate control over the channel and produces higher drain current. The sensitivity is calculated by measuring the alteration of drain current with wavelength. Peak sensitivity of the order of 105 is obtained at VGS=0.5V and provides a maximum responsivity of 1.6x103 A/W at VGS=1.5V for λ= 0.7μm. This modified TFET based hybrid photosensor can be a new generation of highly sensitive photosensor.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"101 1","pages":"47-48"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76405417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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