Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595659
A. Kanevce, J. Li, R. Crandall, M. Page, E. Iwaniczko
This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.
{"title":"Simulations of photo-carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers","authors":"A. Kanevce, J. Li, R. Crandall, M. Page, E. Iwaniczko","doi":"10.1109/NUSOD.2010.5595659","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595659","url":null,"abstract":"This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"78 1","pages":"73-74"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87174314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595652
F. Romer, M. Deppner, B. Witzigmann
We report on the computational analysis of a triangular core-multishell nanowire light emitting diode with three joint InxGa1−xN active layers. The different crystal orientations of these layers lead to different polarization induced internal fields and transition energies. The simulation approach accounts for these effects by including the calculation of strained band edges and piezo potentials and provides a self-consistent model for the coupled 3D bulk and 2D quantized structure. The simulator is targeted to a comprehensive analysis of luminescence including the spatial variation of transition energies and carrier densities.
{"title":"Physics-based simulation of a core-multishell nanowire light emitting diode","authors":"F. Romer, M. Deppner, B. Witzigmann","doi":"10.1109/NUSOD.2010.5595652","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595652","url":null,"abstract":"We report on the computational analysis of a triangular core-multishell nanowire light emitting diode with three joint InxGa1−xN active layers. The different crystal orientations of these layers lead to different polarization induced internal fields and transition energies. The simulation approach accounts for these effects by including the calculation of strained band edges and piezo potentials and provides a self-consistent model for the coupled 3D bulk and 2D quantized structure. The simulator is targeted to a comprehensive analysis of luminescence including the spatial variation of transition energies and carrier densities.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"117 1","pages":"91-92"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79753035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595664
B. Kippelen, S. Choi, W. J. Potscavage
In this talk we will discuss the modeling of large-area organic solar cells. Degradation of the performance with increased area is observed and analyzed in terms of the power loss density concept. The equivalent circuit model is used to verify that a change in power loss density (or RSA) can have a strong influence on device performance. The limited sheet resistance of ITO is found to be one of the major limiting factors when the area of the cell is increased. The effective series resistance of the ITO film can be minimized by integrating metal grids and the improvement is analyzed using a power loss density analysis. By integrating metal grids onto ITO, the series resistance could be reduced significantly yielding improved performance.
{"title":"Modeling large-area solar cells","authors":"B. Kippelen, S. Choi, W. J. Potscavage","doi":"10.1109/NUSOD.2010.5595664","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595664","url":null,"abstract":"In this talk we will discuss the modeling of large-area organic solar cells. Degradation of the performance with increased area is observed and analyzed in terms of the power loss density concept. The equivalent circuit model is used to verify that a change in power loss density (or RSA) can have a strong influence on device performance. The limited sheet resistance of ITO is found to be one of the major limiting factors when the area of the cell is increased. The effective series resistance of the ITO film can be minimized by integrating metal grids and the improvement is analyzed using a power loss density analysis. By integrating metal grids onto ITO, the series resistance could be reduced significantly yielding improved performance.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"52 1","pages":"67-68"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85553379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595672
M. Satter, P. Yoder
Shallow etch depths may contribute to a reduction in the optical gain of MQW lasers through the lateral diffusion of carriers away from the region of greatest optical intensity. Deeply etched mesas can prevent this lateral diffusion, but may themselves contribute to a degradation of optical gain if the sidewalls are not effectively passivated. Simulation results considering the effects of surface recombination velocity (SRV) at the edge of the etched active layers indicate that SRV must be reduced below approximately 105 cm/s in order for deep etch designs to provide benefit. Very few experimental studies quantify the efficiency of GaN surface passivation in terms of SRV. Further experimental studies are required to better assess the viability of deep etch MQW laser designs.
{"title":"Lateral carrier confinement and threshold current reduction in GaN QW lasers with deeply etched mesa","authors":"M. Satter, P. Yoder","doi":"10.1109/NUSOD.2010.5595672","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595672","url":null,"abstract":"Shallow etch depths may contribute to a reduction in the optical gain of MQW lasers through the lateral diffusion of carriers away from the region of greatest optical intensity. Deeply etched mesas can prevent this lateral diffusion, but may themselves contribute to a degradation of optical gain if the sidewalls are not effectively passivated. Simulation results considering the effects of surface recombination velocity (SRV) at the edge of the etched active layers indicate that SRV must be reduced below approximately 105 cm/s in order for deep etch designs to provide benefit. Very few experimental studies quantify the efficiency of GaN surface passivation in terms of SRV. Further experimental studies are required to better assess the viability of deep etch MQW laser designs.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"72 1","pages":"51-52"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86288113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595640
V. Chauhan, Jacob Cohen, R. Trebino
In this paper we present a method for modeling ultrashort-laser-pulse compressors/stretchers using Kostenbauder matrices. In this method, a Gaussian pulse is represented by a 2×2 complex Q-matrix and an optical element is represented by a 4×4 real K-matrix. This formalism models pulse compressors and performs full spatio-temporal analysis. Additionally, this formalism allows for uncertainty and sensitivity analyses of the compressors/stretchers. While being simple to implement numerically, this method is computationally much faster than the other equivalent approaches, such as use of Wigner matrices and Wigner functions.
{"title":"Modeling of pulse compressors using Kostenbauder matrices","authors":"V. Chauhan, Jacob Cohen, R. Trebino","doi":"10.1109/NUSOD.2010.5595640","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595640","url":null,"abstract":"In this paper we present a method for modeling ultrashort-laser-pulse compressors/stretchers using Kostenbauder matrices. In this method, a Gaussian pulse is represented by a 2×2 complex Q-matrix and an optical element is represented by a 4×4 real K-matrix. This formalism models pulse compressors and performs full spatio-temporal analysis. Additionally, this formalism allows for uncertainty and sensitivity analyses of the compressors/stretchers. While being simple to implement numerically, this method is computationally much faster than the other equivalent approaches, such as use of Wigner matrices and Wigner functions.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"39 1","pages":"115-116"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80514345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595677
M. Connelly, C. O'Riordan
A simple time-domain model is presented that can predict optical pulse propagation in reflective semiconductor optical amplifiers (RSOAs). The RSOA saturation energy, effective lifetime and material gain coefficient parameters used in the model are determined using experimental measurements of the input and output pulse temporal profiles to the RSOA and Levenberg-Marquardt parameter extraction algorithm. The model accurately predicts the propagation of 50.4 ps pulsewidth high-power pulses in the RSOA.
{"title":"Simple model for optical pulse propagation in a reflective semiconductor optical amplifier","authors":"M. Connelly, C. O'Riordan","doi":"10.1109/NUSOD.2010.5595677","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595677","url":null,"abstract":"A simple time-domain model is presented that can predict optical pulse propagation in reflective semiconductor optical amplifiers (RSOAs). The RSOA saturation energy, effective lifetime and material gain coefficient parameters used in the model are determined using experimental measurements of the input and output pulse temporal profiles to the RSOA and Levenberg-Marquardt parameter extraction algorithm. The model accurately predicts the propagation of 50.4 ps pulsewidth high-power pulses in the RSOA.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"15 1","pages":"37-38"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76252219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595682
X. D. Wang, W. D. Hu, X. Chen, L. Wang, X. Y. Li, W. Lu
The spectral photoresponse characteristics for visible blind GaN/AlGaN p-i-n photodiode have been numerically studied. Effects of the absorption layer thickness and the n-layer thickness on the photoresponse spectra have been investigated. Our work shows that the absorption layer thickness and n-layer thickness have important impact on the peak value of photoresponse spectra and rejection ratio of short-wavelength side, respectively.
{"title":"Photoresponse simulation of visible blind GaN/AlGaN p-i-n photodiode","authors":"X. D. Wang, W. D. Hu, X. Chen, L. Wang, X. Y. Li, W. Lu","doi":"10.1109/NUSOD.2010.5595682","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595682","url":null,"abstract":"The spectral photoresponse characteristics for visible blind GaN/AlGaN p-i-n photodiode have been numerically studied. Effects of the absorption layer thickness and the n-layer thickness on the photoresponse spectra have been investigated. Our work shows that the absorption layer thickness and n-layer thickness have important impact on the peak value of photoresponse spectra and rejection ratio of short-wavelength side, respectively.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"44 1","pages":"31-32"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76939248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595651
J. Piprek, Zhanming Li
Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.
{"title":"Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes","authors":"J. Piprek, Zhanming Li","doi":"10.1109/NUSOD.2010.5595651","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595651","url":null,"abstract":"Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"89-90"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86488167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595653
A. Carmele, M. Dachner, J. Wolters, Marten Richter, A. Knorr
We propose further experimental and theoretical investigations of optical devices in the single-photon limit and present a theoretical framework to study parameter dependent quantum light emission in semiconductor environments.
{"title":"Quantum light emission from cavity enhanced LEDs","authors":"A. Carmele, M. Dachner, J. Wolters, Marten Richter, A. Knorr","doi":"10.1109/NUSOD.2010.5595653","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595653","url":null,"abstract":"We propose further experimental and theoretical investigations of optical devices in the single-photon limit and present a theoretical framework to study parameter dependent quantum light emission in semiconductor environments.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"19 1","pages":"85-86"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79824922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595668
U. Bandelow, T. Koprucki, A. Wilms, A. Knorr
We present a spatially resolved semiclassical model for the simulation of semiconductor quantum-dot (QD) lasers including a multi-species description for the carriers along the optical active region. The model links microscopic determined quantities like scattering rates between the different species and dephasing times, that depend essentially on the carrier densities, with macroscopic transport equations and equations for the optical field.
{"title":"Multi-species modeling of quantum dot lasers with microscopic treatment of coulomb scattering","authors":"U. Bandelow, T. Koprucki, A. Wilms, A. Knorr","doi":"10.1109/NUSOD.2010.5595668","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595668","url":null,"abstract":"We present a spatially resolved semiclassical model for the simulation of semiconductor quantum-dot (QD) lasers including a multi-species description for the carriers along the optical active region. The model links microscopic determined quantities like scattering rates between the different species and dephasing times, that depend essentially on the carrier densities, with macroscopic transport equations and equations for the optical field.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"41 1","pages":"59-60"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72929296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：