Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541487
J. Claudon, S. Kotal, A. Artioli, M. Finazzer, R. Fons, Y. Genuist, Joël Bleuse, J. Gerard, Y. Wang, A. D. Osterkryger, N. Gregersen, M. Munsch, A. Kuhlmann, D. Cadeddu, M. Poggio, R. W. Warburton, P. Verlot
Nanowire antennas embedding a single semiconductor quantum dot (QD) represent an appealing solid-state platform for photonic quantum technologies. We present recent work aiming at generating indistinguishable photons with this system. We first investigate decoherence channels that spectrally broaden the QD emission, and discuss in particular the impact of nanowire thermal vibrations. We also develop nanowire optical nanocavities, which provide a large acceleration of the QD spontaneous emission, so that it becomes less sensitive to environmental noises.
{"title":"Nanowire antennas embedding single quantum dots: towards the emission of indistinguishable photons","authors":"J. Claudon, S. Kotal, A. Artioli, M. Finazzer, R. Fons, Y. Genuist, Joël Bleuse, J. Gerard, Y. Wang, A. D. Osterkryger, N. Gregersen, M. Munsch, A. Kuhlmann, D. Cadeddu, M. Poggio, R. W. Warburton, P. Verlot","doi":"10.1109/NUSOD52207.2021.9541487","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541487","url":null,"abstract":"Nanowire antennas embedding a single semiconductor quantum dot (QD) represent an appealing solid-state platform for photonic quantum technologies. We present recent work aiming at generating indistinguishable photons with this system. We first investigate decoherence channels that spectrally broaden the QD emission, and discuss in particular the impact of nanowire thermal vibrations. We also develop nanowire optical nanocavities, which provide a large acceleration of the QD spontaneous emission, so that it becomes less sensitive to environmental noises.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"49 1","pages":"13-14"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86393226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541434
Zoe C. M. Davidson, J. Rorison, S. Sweeney, C. Broderick
Highly-mismatched alloys constitute a promising approach to extend the operational range of GaAs-based quantum well (QW) lasers to telecom wavelengths. This is challenging using type-I QWs due to the difficulty to incorporate sufficient N or Bi via epitaxial growth. To overcome this, we investigate a novel class of strain-compensated type-II QWs combining electron-confining, tensile strained GaNyAs1−y and hole-confining, compressively strained GaAs1−xBix layers. We systematically analyse the optoelectronic properties of W-type GaAs1−xBix/GaNyAs1−y QWs, and identify paths to optimise their threshold characteristics. Solving the multi-band k•p Schrödinger equation self-consistently with Poisson’s equation highlights the importance of electrostatic confinement in determining the optical and differential gain of these QWs. Our calculations demonstrate that GaAs1−xBix/GaNyAs1−y QWs offer broad scope for band structure engineering, with W-type structures presenting the possibility to combine high long-wavelength gain with the intrinsically low non-radiative Auger recombination rates of type-II QWs.
{"title":"Strain-balanced GaAs1−xBix/GaNyAs1−y W-type quantum wells for GaAs-based 1.3–1.6 µm lasers","authors":"Zoe C. M. Davidson, J. Rorison, S. Sweeney, C. Broderick","doi":"10.1109/NUSOD52207.2021.9541434","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541434","url":null,"abstract":"Highly-mismatched alloys constitute a promising approach to extend the operational range of GaAs-based quantum well (QW) lasers to telecom wavelengths. This is challenging using type-I QWs due to the difficulty to incorporate sufficient N or Bi via epitaxial growth. To overcome this, we investigate a novel class of strain-compensated type-II QWs combining electron-confining, tensile strained GaN<inf>y</inf>As<inf>1−y</inf> and hole-confining, compressively strained GaAs<inf>1−x</inf>Bi<inf>x</inf> layers. We systematically analyse the optoelectronic properties of W-type GaAs<inf>1−x</inf>Bi<inf>x</inf>/GaN<inf>y</inf>As<inf>1−y</inf> QWs, and identify paths to optimise their threshold characteristics. Solving the multi-band k•p Schrödinger equation self-consistently with Poisson’s equation highlights the importance of electrostatic confinement in determining the optical and differential gain of these QWs. Our calculations demonstrate that GaAs<inf>1−x</inf>Bi<inf>x</inf>/GaN<inf>y</inf>As<inf>1−y</inf> QWs offer broad scope for band structure engineering, with W-type structures presenting the possibility to combine high long-wavelength gain with the intrinsically low non-radiative Auger recombination rates of type-II QWs.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"5-6"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84437250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541517
K. Thirupathaiah, L. Rao
This article demonstrate design and numerical analysis of the multiband band-pass and band-stop filters using an even-mode MIM waveguide-based step impedance resonator (SIR) and simultaneously operated at optical bands O & L bands (185.72 THz and 230.02 THz) with higher efficiency (>35 dB).
{"title":"Nanoplasmonic Multiband Filters Using SIR for Wireless Networks","authors":"K. Thirupathaiah, L. Rao","doi":"10.1109/NUSOD52207.2021.9541517","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541517","url":null,"abstract":"This article demonstrate design and numerical analysis of the multiband band-pass and band-stop filters using an even-mode MIM waveguide-based step impedance resonator (SIR) and simultaneously operated at optical bands O & L bands (185.72 THz and 230.02 THz) with higher efficiency (>35 dB).","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"8 1","pages":"111-112"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75885293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541469
G. Bharti, R. Sonkar
This paper demonstrates the modeling and simulation of all-optical polarization rotation based clocked D flip-flop using a single micro-ring resonator. The simulated results show the switching time of 0.5 ps and the on-off ratio of 25.27 dB.
{"title":"Modeling of polarization-rotation based photonic D flip-flop using a compact micro-ring resonator","authors":"G. Bharti, R. Sonkar","doi":"10.1109/NUSOD52207.2021.9541469","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541469","url":null,"abstract":"This paper demonstrates the modeling and simulation of all-optical polarization rotation based clocked D flip-flop using a single micro-ring resonator. The simulated results show the switching time of 0.5 ps and the on-off ratio of 25.27 dB.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"6 1","pages":"129-130"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84133675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541511
E. Avrutin, B. Ryvkin
An effective one-dimensional travelling wave model is used to analyse the performance of a short-cavity asymmetric-waveguide high pulsed power laser diodes. The effect of longitudinal inhomogeneity is proven to be modest for practical laser designs.
{"title":"Travelling wave analysis of high pulsed power long-wavelength asymmetric-waveguide short-cavity laser diodes with a bulk active layer","authors":"E. Avrutin, B. Ryvkin","doi":"10.1109/NUSOD52207.2021.9541511","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541511","url":null,"abstract":"An effective one-dimensional travelling wave model is used to analyse the performance of a short-cavity asymmetric-waveguide high pulsed power laser diodes. The effect of longitudinal inhomogeneity is proven to be modest for practical laser designs.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"150 1","pages":"83-84"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76406864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541422
S. Rani, J. Kumar
Quantum dots (QDs) provide some unique properties which make them preferable over other luminescent materials, one such property being adjustable and sharp emission which makes it an interesting candidate for electroluminescent devices. A QD based electroluminescent device has been taken into consideration in this theoretical study. The effect of the bias, temperature, the presence of traps and thickness of QD layers on the conduction mechanism and overall performance of the device has been studied.
{"title":"Dependence of conduction mechanism on bias and temperature in quantum-dot based electroluminescent devices","authors":"S. Rani, J. Kumar","doi":"10.1109/NUSOD52207.2021.9541422","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541422","url":null,"abstract":"Quantum dots (QDs) provide some unique properties which make them preferable over other luminescent materials, one such property being adjustable and sharp emission which makes it an interesting candidate for electroluminescent devices. A QD based electroluminescent device has been taken into consideration in this theoretical study. The effect of the bias, temperature, the presence of traps and thickness of QD layers on the conduction mechanism and overall performance of the device has been studied.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"27-28"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78555963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541528
Raed El Hassanieh, P. Morel, M. Hamze, V. Quintard, A. Pérennou, A. Sharaiha
In this paper, we develop a time domain model of a Semiconductor Optical Amplifiers Fiber Cavity Laser (SOA-FCL). The time domain characteristics of two different cavity configurations (bidirectional and one-way cavity) are compared. The study shows that one-way cavity is less noisy compared to the bidirectional cavity which presents higher output power.
{"title":"Time Domain Numerical Study of Two Semiconductor Optical Amplifiers Laser Cavity Structures","authors":"Raed El Hassanieh, P. Morel, M. Hamze, V. Quintard, A. Pérennou, A. Sharaiha","doi":"10.1109/NUSOD52207.2021.9541528","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541528","url":null,"abstract":"In this paper, we develop a time domain model of a Semiconductor Optical Amplifiers Fiber Cavity Laser (SOA-FCL). The time domain characteristics of two different cavity configurations (bidirectional and one-way cavity) are compared. The study shows that one-way cavity is less noisy compared to the bidirectional cavity which presents higher output power.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"16 1","pages":"123-124"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75026049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541527
B. Novaković, Ye Tao, S. Asgari, D. Mcguire
In this paper we demonstrate a directly coupled opto-electro-thermal (OET) transmission line laser model (TLLM) for edge emitting laser simulations and its comparison to physical simulations and measurements. Our results show that the OET TLLM has comparable computational efficiency to the standard opto-electronic (OE) TLLM and can include self-heating effects with good accuracy. As such OET TLLM can be used as a flexible tool for reduced order physical modeling, as well as for photonic integrated circuit (PIC) simulation, including thermal and external feedback effects.
{"title":"Thermally-Enabled Transmission Line Laser Model with Arbitrary Sampled Gain Spectra","authors":"B. Novaković, Ye Tao, S. Asgari, D. Mcguire","doi":"10.1109/NUSOD52207.2021.9541527","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541527","url":null,"abstract":"In this paper we demonstrate a directly coupled opto-electro-thermal (OET) transmission line laser model (TLLM) for edge emitting laser simulations and its comparison to physical simulations and measurements. Our results show that the OET TLLM has comparable computational efficiency to the standard opto-electronic (OE) TLLM and can include self-heating effects with good accuracy. As such OET TLLM can be used as a flexible tool for reduced order physical modeling, as well as for photonic integrated circuit (PIC) simulation, including thermal and external feedback effects.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"21 1","pages":"85-86"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75536601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541486
M. F. Pereira, A. Apostolakis
A hybrid approach combining Nonequilibrium Green’s Fuctions with solutions of the Boltzman equation, delivers voltage and intrinsic asymmetry control of nonlinearities in semiconductor superlattices. Unexpected nonlinear behavior is predicted for high harmonics as a result of voltage control.
{"title":"Controlling Nonlinearities in Semiconductor Superlattice Multipliers","authors":"M. F. Pereira, A. Apostolakis","doi":"10.1109/NUSOD52207.2021.9541486","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541486","url":null,"abstract":"A hybrid approach combining Nonequilibrium Green’s Fuctions with solutions of the Boltzman equation, delivers voltage and intrinsic asymmetry control of nonlinearities in semiconductor superlattices. Unexpected nonlinear behavior is predicted for high harmonics as a result of voltage control.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"322 1","pages":"149-150"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76294151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541536
E. Nonni, D. Rossi, M. A. der Maur, A. Di Carlo
Both x-ray diffraction (XRD) and photo-luminescence (PL) characterizations of methylammonium lead iodide perovskite (MAPbI3) reveal signatures of a coexistence of the tetragonal and orthorhombic phases over a wide range of temperatures, suggesting that the phase transition does not happen sharply at a temperature of 164 K as reported in literature. To understand the causes of this discrepancy we investigated the evolution of the phase mixture from 300 K down to 80 K and its influence on electrical device characteristics. For this we developed a numerical approach to extract effective electrical parameters like resistivity for the mixed-phase MAPbI3 as a function of temperature and volume ratio of the two phases. The spatial distribution of the tetragonal and orthorhombic phases and their evolution with temperature has been extracted from measured XRD maps, employing a Monte Carlo algorithm to interpolate between measured temperatures. The electrical simulations have been performed by means of the drift-diffusion model.
{"title":"Modelling of mixed-phase MAPbI3","authors":"E. Nonni, D. Rossi, M. A. der Maur, A. Di Carlo","doi":"10.1109/NUSOD52207.2021.9541536","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541536","url":null,"abstract":"Both x-ray diffraction (XRD) and photo-luminescence (PL) characterizations of methylammonium lead iodide perovskite (MAPbI3) reveal signatures of a coexistence of the tetragonal and orthorhombic phases over a wide range of temperatures, suggesting that the phase transition does not happen sharply at a temperature of 164 K as reported in literature. To understand the causes of this discrepancy we investigated the evolution of the phase mixture from 300 K down to 80 K and its influence on electrical device characteristics. For this we developed a numerical approach to extract effective electrical parameters like resistivity for the mixed-phase MAPbI3 as a function of temperature and volume ratio of the two phases. The spatial distribution of the tetragonal and orthorhombic phases and their evolution with temperature has been extracted from measured XRD maps, employing a Monte Carlo algorithm to interpolate between measured temperatures. The electrical simulations have been performed by means of the drift-diffusion model.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"70 1","pages":"7-8"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87034530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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