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Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-30 DOI: 10.1186/s40580-025-00474-5
Yongsu Lee, Hae-Won Lee, Su Jin Kim, Jeong Min Park, Byoung Hun Lee, Chang Goo Kang

Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of Al2O3-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor. These results highlight the potential of passivated metal-oxide thin films for developing reliable radiation-hardened semiconductor devices that can be used in harsh space environments. In addition, the relationship between low-frequency noise and defects due to oxygen vacancies was revealed, which can be utilized to improve device reliability.

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引用次数: 0
Correction: Engineering extracellular vesicles for ROS scavenging and tissue regeneration
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-27 DOI: 10.1186/s40580-024-00470-1
Ahmed Abdal Dayem, Ellie Yan, Minjae Do, Yoojung Kim, Yeongseo Lee, Ssang-Goo Cho, Deok-Ho Kim
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引用次数: 0
Correction: Interfacial charge transfer on hierarchical synergistic shell wall of MXene/MoS2 on CdS nanospheres: heterostructure integrity for visible light responsive photocatalytic H2 evolution
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-27 DOI: 10.1186/s40580-024-00469-8
Kugalur Shanmugam Ranjith, Ali Mohammadi, Ganji Seeta Rama Raju, Yun Suk Huh, Young-Kyu Han
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引用次数: 0
Expanding the frontiers of electrocatalysis: advanced theoretical methods for water splitting
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-24 DOI: 10.1186/s40580-024-00467-w
Seong Chan Cho, Jun Ho Seok, Hung Ngo Manh, Jae Hun Seol, Chi Ho Lee, Sang Uck Lee

Electrochemical water splitting, which encompasses the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER), offers a promising route for sustainable hydrogen production. The development of efficient and cost-effective electrocatalysts is crucial for advancing this technology, especially given the reliance on expensive transition metals, such as Pt and Ir, in traditional catalysts. This review highlights recent advances in the design and optimization of electrocatalysts, focusing on density functional theory (DFT) as a key tool for understanding and improving catalytic performance in the HER and OER. We begin by exploring DFT-based approaches for evaluating catalytic activity under both acidic and alkaline conditions. The review then shifts to a material-oriented perspective, showcasing key catalyst materials and the theoretical strategies employed to enhance their performance. In addition, we discuss scaling relationships that exist between binding energies and electronic structures through the use of charge-density analysis and d-band theory. Advanced concepts, such as the effects of adsorbate coverage, solvation, and applied potential on catalytic behavior, are also discussed. We finally focus on integrating machine learning (ML) with DFT to enable high-throughput screening and accelerate the discovery of novel water-splitting catalysts. This comprehensive review underscores the pivotal role that DFT plays in advancing electrocatalyst design and highlights its potential for shaping the future of sustainable hydrogen production.

Graphical Abstract

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引用次数: 0
Ferroelectric capacitive memories: devices, arrays, and applications 铁电容性存储器:器件、阵列和应用
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-22 DOI: 10.1186/s40580-024-00463-0
Zuopu Zhou, Leming Jiao, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Qiwen Kong, Chen Sun, Jiawei Xie, Xiao Gong

Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the unique capacitive operation mechanism of FCMs transfers the memory reading and in-memory computing to charge domain, offering ultra-high energy efficiency, better compatibility to large-scale array, and negligible read disturbance. In recent years, extensive research has been conducted on FCMs. Various device designs were proposed and experimentally demonstrated with progressively enhanced performance, showing remarkable potential of the novel technology. This article summarizes several typical FCM devices by introducing their mechanisms, comparing their performance, and discussing their limitations. We further investigate the capacitive crossbar array operation and review the recent progress in the FCM integration and array-level demonstrations. In addition, we present the computing-in-memory applications of the FCMs to realize ultra-low-power machine learning acceleration for future computing systems.

铁电电容存储器(fcm)利用铁电极化调制器件电容进行数据存储,为实现双端无损读取铁电存储器提供了新的技术途径。与传统的电阻式存储器相比,fcm独特的电容操作机制将存储器读取和内存计算转移到电荷域,具有超高的能量效率、更好的大规模阵列兼容性和可忽略的读取干扰。近年来,对fcm进行了广泛的研究。提出了多种器件设计方案并进行了实验验证,性能逐步提高,显示了新技术的巨大潜力。本文总结了几种典型的FCM器件,介绍了它们的机制,比较了它们的性能,并讨论了它们的局限性。我们进一步研究了电容交叉栅阵列的操作,并回顾了FCM集成和阵列级演示的最新进展。​
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引用次数: 0
Multi-gate neuron-like transistors based on ensembles of aligned nanowires on flexible substrates 基于柔性衬底上排列纳米线集成的多栅类神经元晶体管
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-18 DOI: 10.1186/s40580-024-00472-z
João Neto, Abhishek Singh Dahiya, Ravinder Dahiya

The intriguing way the receptors in biological skin encode the tactile data has inspired the development of electronic skins (e-skin) with brain-inspired or neuromorphic computing. Starting with local (near sensor) data processing, there is an inherent mechanism in play that helps to scale down the data. This is particularly attractive when one considers the huge data produced by large number of sensors expected in a large area e-skin such as the whole-body skin of a robot. This underlines the need for biological skin like processing in the e-skin. Herein, we present multi-gate field-effect transistors (v-FET) having capacitively coupled floating gate (FG) to mimic some of the neural functions. The v-FETs are obtained by deterministic assembly of ZnO nanowires on a flexible substrate using contactless dielectrophoresis method, followed metallization using conventional microfabrication steps. The spatial summation of two presynaptic inputs (applied at multiple control gates) of the transistor confirm their neuron-like response. The temporal summation (such as paired-pulse facilitation) by presented v-FETs further confirm their neuron-like mimicking with one presynaptic input. The temporal and spatial summation functions, demonstrated by the v-FET presented here, could open interesting new avenues for development of neuromorphic electronic skin (v-skin) with possibility of biological-skin like distributed computing.

生物皮肤中的感受器编码触觉数据的有趣方式激发了具有大脑启发或神经形态计算的电子皮肤(e-skin)的发展。从本地(近传感器)数据处理开始,有一种内在的机制在起作用,有助于缩小数据的规模。当考虑到大面积电子皮肤(如机器人的全身皮肤)中大量传感器产生的大量数据时,这一点尤其具有吸引力。这强调了在电子皮肤中处理生物皮肤的必要性。在这里,我们提出了具有电容耦合浮栅(FG)的多栅极场效应晶体管(v-FET)来模拟一些神经功能。v型场效应管是通过采用无接触介质电泳方法在柔性衬底上确定组装ZnO纳米线,然后采用传统的微加工步骤进行金属化而获得的。晶体管的两个突触前输入(应用于多个控制门)的空间总和证实了它们的神经元样响应。所提出的v- fet的时间累加(如配对脉冲易化)进一步证实了它们具有神经元样的突触前输入模拟。v-FET所展示的时间和空间求和函数可以为神经形态电子皮肤(v-skin)的发展开辟有趣的新途径,并有可能实现类似生物皮肤的分布式计算。
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引用次数: 0
Tuning electronic structure and carrier transport properties through crystal orientation control in two-dimensional Dion-Jacobson phase perovskites 通过晶体取向控制二维Dion-Jacobson相钙钛矿的电子结构和载流子输运性质
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-01-13 DOI: 10.1186/s40580-024-00473-y
Byunggeol Kim, Jeehong Park, Donghee Kang, Na Eun Jung, Kitae Kim, Hongsun Ryu, Joon Ik Jang, Soohyung Park, Yeonjin Yi

Two-dimensional halide perovskites are attracting attention due to their structural diversity, improved stability, and enhanced quantum efficiency compared to their three-dimensional counterparts. In particular, Dion-Jacobson (DJ) phase perovskites exhibit superior structural stability compared to Ruddlesden-Popper phase perovskites. The inherent quantum well structure of layered perovskites leads to highly anisotropic charge transport and optical properties. Therefore, controlling the preferred crystal orientation (parallel or perpendicular) is crucial for optimizing device performance. This work presents a rational strategy to control parallel and perpendicular crystal growth in C6N2H16PbI4 (4AMPPbI4)-based DJ phase perovskite thin films. We demonstrate that crystal orientation depends on crystal growth rates, which can be controlled by varying the solvent composition, antisolvent, and annealing temperature. Direct and inverse photoelectron spectroscopy reveals that the electronic structure of 4AMPPbI4, including its work function, ionization energy, and electron affinity, is orientation-dependent. Different orientations significantly affect carrier transport as confirmed by single-carrier devices. This study highlights the critical role of crystal orientation in DJ phase perovskites for designing high-performance optoelectronic devices.

Graphical Abstract

与三维卤化物钙钛矿相比,二维卤化物钙钛矿因其结构多样性、稳定性和量子效率的提高而备受关注。特别是,与Ruddlesden-Popper相钙钛矿相比,Dion-Jacobson (DJ)相钙钛矿具有更好的结构稳定性。层状钙钛矿固有的量子阱结构导致其具有高度各向异性的电荷输运和光学性质。因此,控制优选晶体取向(平行或垂直)对于优化器件性能至关重要。本文提出了一种合理的策略来控制C6N2H16PbI4 (4AMPPbI4)基DJ相钙钛矿薄膜的平行和垂直晶体生长。我们证明晶体取向取决于晶体生长速率,这可以通过改变溶剂组成、反溶剂和退火温度来控制。直接光电子能谱和逆光电子能谱显示,4AMPPbI4的电子结构,包括其功函数、电离能和电子亲和力,都与取向有关。单载流子器件证实了不同取向对载流子输运的影响。本研究强调了DJ相钙钛矿晶体取向在设计高性能光电器件中的关键作用。图形抽象
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引用次数: 0
Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures 在低温下增强半铪自整流铁电隧道结的性能。
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-12-16 DOI: 10.1186/s40580-024-00461-2
Junghyeon Hwang, Chaeheon Kim, Jinho Ahn, Sanghun Jeon

The advancement in high-performance computing technologies, including quantum and aerospace systems, necessitates components that operate efficiently at cryogenic temperatures. In this study, we demonstrate a hafnia-based ferroelectric tunnel junction (FTJ) that achieves a record-high tunneling electroresistance (TER) ratio of over 200,000 and decade-long retention characteristics. By introducing asymmetric oxygen vacancies through the strategic use of indium oxide (InOx) layer, we enhance the TER ratio without increasing off-current, addressing the longstanding issue of low on-current in hafnia-based FTJs. Unlike prior approaches that led to leakage currents, our method optimizes tunneling behavior by leveraging the differential oxygen dissociation energy between InOx and hafnium zirconium oxide (HZO). This results in asymmetric modulation of the tunnel barrier, enhancing electron tunneling in one polarization state while maintaining stability in the opposite state. Furthermore, we explore the intrinsic characteristics of the FTJ at cryogenic temperatures, where reduced thermal energy minimizes leakage currents and allows the maximization of device performance. These findings establish a new benchmark for TER in hafnia-based FTJs and provide valuable insights for the integration of these devices into advanced cryogenic memory systems.

Graphical Abstract

高性能计算技术的进步,包括量子和航空航天系统,需要在低温下高效运行的组件。在这项研究中,我们展示了一种基于铪的铁电隧道结(FTJ),它实现了超过20万的创纪录的隧道电阻(TER)比和长达十年的保持特性。通过战略性地使用氧化铟(InOx)层引入不对称氧空位,我们在不增加关流的情况下提高了TER比率,解决了长期以来基于铪的ftj的低通流问题。与之前导致泄漏电流的方法不同,我们的方法通过利用InOx和氧化锆铪(HZO)之间不同的氧解离能来优化隧道行为。这导致了隧道势垒的不对称调制,增强了电子在一个偏振态的隧穿,同时保持了相反偏振态的稳定。此外,我们探索了低温下FTJ的固有特性,在低温下,减少的热能使泄漏电流最小化,并使器件性能最大化。这些发现为基于hafnia的ftj中的TER建立了新的基准,并为将这些设备集成到先进的低温存储系统中提供了有价值的见解。
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引用次数: 0
Engineering of buried interfaces in perovskites: advancing sustainable photovoltaics 过氧化物中的埋藏界面工程:推动可持续光伏技术的发展。
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-12-16 DOI: 10.1186/s40580-024-00464-z
Jihyun Kim, William Jo

Perovskite solar cells (PSCs) have garnered significant attention for their high power conversion efficiency (PCE) and potential for cost-effective, large-scale manufacturing. This comprehensive review focuses on the role of buried interface engineering in enhancing the performance and stability of PSCs with both n-type electron transport layer/perovskite/p-type hole transport layer (n-i-p) and p-type hole transport layer/perovskite/n-type electron transport layer (p-i-n) structures. This study highlights key challenges associated with interface engineering, such as charge extraction, recombination loss, and energy level alignment. Various interface engineering techniques, such as surface passivation, self-assembled monolayers, and additive engineering, are explored in terms of their effectiveness in mitigating recombination loss and improving long-term device stability. This review also provides an in-depth analysis of material selection for the electron and hole transport layers, defect management techniques, and the influence of these on perovskite film quality and device stability. Advanced characterization methods for buried interfaces are discussed, providing insights into the structural, morphological, and electronic properties that govern device performance. Furthermore, we explore emerging approaches that target homogenous cation distribution and phase stability at buried interfaces, both of which are crucial for improving PCEs beyond current benchmarks. By synthesizing the latest research findings and identifying key challenges, this review aims to guide future directions in interface engineering for PSCs and ensure their successful use in next-generation sustainable energy technologies.

Graphical Abstract

钙钛矿太阳能电池(PSCs)因其高功率转换效率(PCE)和具有成本效益、大规模生产的潜力而受到广泛关注。本文综述了埋藏界面工程在提高具有n型电子传输层/钙钛矿/p型空穴传输层(n-i-p)和p型空穴传输层/钙钛矿/n型电子传输层(p-i-n)结构的psc的性能和稳定性中的作用。这项研究强调了与界面工程相关的关键挑战,如电荷提取、重组损失和能级对齐。各种界面工程技术,如表面钝化、自组装单层和增材工程,在减轻复合损失和提高长期器件稳定性方面的有效性进行了探索。本文还深入分析了电子和空穴传输层的材料选择,缺陷管理技术,以及这些对钙钛矿薄膜质量和器件稳定性的影响。讨论了埋藏界面的高级表征方法,提供了对控制器件性能的结构,形态和电子特性的见解。此外,我们探索了针对埋藏界面的均匀阳离子分布和相稳定性的新兴方法,这两者对于提高pce超越当前基准至关重要。通过对最新研究成果的综合和对关键挑战的识别,本文旨在指导PSCs界面工程的未来发展方向,并确保其在下一代可持续能源技术中的成功应用。
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引用次数: 0
Nanomaterial-based detection of circulating tumor cells and circulating cancer stem cells for cancer immunotherapy 基于纳米材料的循环肿瘤细胞和循环肿瘤干细胞检测用于肿瘤免疫治疗
IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-12-13 DOI: 10.1186/s40580-024-00466-x
Yeochan Yun, Seewoo Kim, Sang-Nam Lee, Hyeon-Yeol Cho, Jeong-Woo Choi

Nanomaterials have emerged as transformative tools for detecting circulating tumor cells (CTCs) and circulating cancer stem cells (CCSCs), significantly enhancing cancer diagnostics and immunotherapy. Nanomaterials, including those composed of gold, magnetic materials, and silica, have enhanced the sensitivity, specificity, and efficiency of isolating these rare cells from blood. These developments are of paramount importance for the early detection of cancer and for providing real-time insights into metastasis and treatment resistance, which are essential for the development of personalized immunotherapies. The combination of nanomaterial-based platforms with phenotyping techniques, such as Raman spectroscopy and microfluidics, enables researchers to enhance immunotherapy protocols targeting specific CTC and CCSC markers. Nanomaterials also facilitate the targeted delivery of immunotherapeutic agents, including immune checkpoint inhibitors and therapeutic antibodies, directly to tumor cells. This synergistic approach has the potential to enhance therapeutic efficacy and mitigate the risk of metastasis and relapse. In conclusion, this review critically examines the use of nanomaterial-driven detection systems for detecting CTCs and CCSCs, their application in immunotherapy, and suggests future directions, highlighting their potential to transform the integration of diagnostics and treatment, thereby paving the way for more precise and personalized cancer therapies.

Graphical Abstract

纳米材料已经成为检测循环肿瘤细胞(ctc)和循环癌症干细胞(CCSCs)的变革性工具,显著增强了癌症诊断和免疫治疗。纳米材料,包括由金、磁性材料和二氧化硅组成的纳米材料,提高了从血液中分离这些稀有细胞的灵敏度、特异性和效率。这些进展对于癌症的早期发现和提供转移和治疗耐药性的实时洞察至关重要,这对于个性化免疫疗法的发展至关重要。基于纳米材料的平台与表型技术(如拉曼光谱和微流体)的结合,使研究人员能够增强针对特定CTC和CCSC标记物的免疫治疗方案。纳米材料也促进了免疫治疗剂的靶向递送,包括免疫检查点抑制剂和治疗性抗体,直接到肿瘤细胞。这种协同的方法有可能提高治疗效果,减轻转移和复发的风险。总之,本文综述了纳米材料驱动检测系统在检测ctc和CCSCs中的应用,以及它们在免疫治疗中的应用,并提出了未来的发展方向,强调了它们在整合诊断和治疗方面的潜力,从而为更精确和个性化的癌症治疗铺平了道路。图形抽象
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引用次数: 0
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Nano Convergence
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