Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4183
I. Ouachtouk, Soumia El Hani, K. Dahi
Research on data-driven bearing fault diagnosis techniques has recently drawn more and more attention due to the availability of massive condition monitoring data. The research work presented in this paper aims to develop an architecture for the detection and diagnosis of bearing faults in the induction machines. The developed data-oriented architecture uses vibration signals collected by sensors placed on the machine, which is based, in the first place, on the extraction of fault indicators based on the harmonics-to-noise ratio envelope. Normalisation is then applied to the extracted indicators to create a well-processed data set. The evolution of these indicators will be studied afterwards according to the type and severity of defects using sequential backward selection technique. Supervised machine learning classification methods are developed to classify the measurements described by the feature vector with respect to the known modes of operation. In the last phase concerning decision making, ten classifiers are tested and applied based on the selected and combined indicators. The developed classification methods allow classifying the observations, with respect to the different modes of bearing condition (outer race, inner race fault or healthy condition). The proposed method is validated on data collected using an experimental bearing test bench. The experimental results indicate that the proposed architecture achieves high accuracy in bearing fault detection under all operational conditions. The results show that, compared to some proposed approaches, our proposed architecture can achieve better performance overall in terms of the number of optimal features and the accuracy of the tests.
{"title":"Intelligent Bearing Fault Diagnosis Method Based on HNR Envelope and Classification Using Supervised Machine Learning Algorithms","authors":"I. Ouachtouk, Soumia El Hani, K. Dahi","doi":"10.15598/aeee.v19i4.4183","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4183","url":null,"abstract":"Research on data-driven bearing fault diagnosis techniques has recently drawn more and more attention due to the availability of massive condition monitoring data. The research work presented in this paper aims to develop an architecture for the detection and diagnosis of bearing faults in the induction machines. The developed data-oriented architecture uses vibration signals collected by sensors placed on the machine, which is based, in the first place, on the extraction of fault indicators based on the harmonics-to-noise ratio envelope. Normalisation is then applied to the extracted indicators to create a well-processed data set. The evolution of these indicators will be studied afterwards according to the type and severity of defects using sequential backward selection technique. Supervised machine learning classification methods are developed to classify the measurements described by the feature vector with respect to the known modes of operation. In the last phase concerning decision making, ten classifiers are tested and applied based on the selected and combined indicators. The developed classification methods allow classifying the observations, with respect to the different modes of bearing condition (outer race, inner race fault or healthy condition). The proposed method is validated on data collected using an experimental bearing test bench. The experimental results indicate that the proposed architecture achieves high accuracy in bearing fault detection under all operational conditions. The results show that, compared to some proposed approaches, our proposed architecture can achieve better performance overall in terms of the number of optimal features and the accuracy of the tests.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45820183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4289
Gabriel Armando Ceballos, K. Grzelakowski
{"title":"Electron Optical Optimisation of an Imaging Energy Analyser: Real Model Field- and Trajectory Simulations Applied to k-Space Visualisation of Electronic States","authors":"Gabriel Armando Ceballos, K. Grzelakowski","doi":"10.15598/aeee.v19i4.4289","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4289","url":null,"abstract":"","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44058692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4134
Grzegorz Ilgiewicz, W. Macherzyński, Joanna Prażmowska-Czajka, A. Stafiniak, R. Paszkiewicz
Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usually, in metallic ohmic annealed contacts of AlGaN/GaN heterostructures, titanium is applied as the first layer, but scandium may be an alternative. It was proved to be useful to obtain both ohmic and Schottky characteristics, depending on annealing temperature of the contact. In the presented research, contacts including scandium (Sc/Al/Mo/Au) were fabricated, and, as reference sample, contacts with titanium including metallziation (Ti/Al/Mo/Au). Reference sample was annealed at 825 ◦C, and forming temperatures for scandium contacts were 825 ◦C, 625 ◦C, and 425 ◦C. All samples after thermal formation process were additionally thickened with Ru/Au bilayer. To quickly compare level of metals in metallization mixing during formation process and to check applicability of EDS (Energy-Dispersive X-ray Spectroscopy), the simulations of electrons trajectories and EDS point scans were performed.
{"title":"Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures","authors":"Grzegorz Ilgiewicz, W. Macherzyński, Joanna Prażmowska-Czajka, A. Stafiniak, R. Paszkiewicz","doi":"10.15598/aeee.v19i4.4134","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4134","url":null,"abstract":"Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usually, in metallic ohmic annealed contacts of AlGaN/GaN heterostructures, titanium is applied as the first layer, but scandium may be an alternative. It was proved to be useful to obtain both ohmic and Schottky characteristics, depending on annealing temperature of the contact. In the presented research, contacts including scandium (Sc/Al/Mo/Au) were fabricated, and, as reference sample, contacts with titanium including metallziation (Ti/Al/Mo/Au). Reference sample was annealed at 825 ◦C, and forming temperatures for scandium contacts were 825 ◦C, 625 ◦C, and 425 ◦C. All samples after thermal formation process were additionally thickened with Ru/Au bilayer. To quickly compare level of metals in metallization mixing during formation process and to check applicability of EDS (Energy-Dispersive X-ray Spectroscopy), the simulations of electrons trajectories and EDS point scans were performed.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46081991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4198
Minh-Sang Van Nguyen, H. Dang
In the context of ambient Backscatter systems, Backscatter devices (tags and readers) transmit data by employing existing Radio Frequency (RF) signals. Most prior works consider perfect hardware impairment and apply the Orthogonal Multiple Access (OMA) technique, but this paper investigates the case of Outage Probability (OP) reduction situation when the hardware is imperfect, especially when the NonOrthogonal Multiple Access (NOMA) technology is applied. Consequently, we design a downlink of transmission from base station to destination to highlight different performances among users. Furthermore, to indicate the impact of levels of hardware impairment, we develop the closed-form expressions of OP for different kinds of users. Finally, extensive simulation results validate the analysis and illustrate the effectiveness of the proposed system.
{"title":"Exploiting Performance of Ambient Backscatter Systems in Presence of Hardware Impairment","authors":"Minh-Sang Van Nguyen, H. Dang","doi":"10.15598/aeee.v19i4.4198","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4198","url":null,"abstract":"In the context of ambient Backscatter systems, Backscatter devices (tags and readers) transmit data by employing existing Radio Frequency (RF) signals. Most prior works consider perfect hardware impairment and apply the Orthogonal Multiple Access (OMA) technique, but this paper investigates the case of Outage Probability (OP) reduction situation when the hardware is imperfect, especially when the NonOrthogonal Multiple Access (NOMA) technology is applied. Consequently, we design a downlink of transmission from base station to destination to highlight different performances among users. Furthermore, to indicate the impact of levels of hardware impairment, we develop the closed-form expressions of OP for different kinds of users. Finally, extensive simulation results validate the analysis and illustrate the effectiveness of the proposed system.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42877780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4207
M. Jakubik, P. Počta
Due to the rising usage of various broadcasting systems and web-casting applications, a measurement of audio quality has become an essential task. This paper presents a benchmark of the parametric models for non-intrusive estimation of the audio quality perceived by the end user. The proposed solution is based on machine learning techniques for broadcasting systems and web-casting applications. The main goal of this study is to assess the performance of the non-intrusive parametric models as well as to evaluate a statistical significance of the performance differences between those models. The paper provides a comparison of several models based on the Support Vector Regression, Genetic Programming, Multigene Symbolic Regression, Neural Networks and Random Forest. The obtained results indicate that among the investigated models the most accurate, although not the fastest ones, are the model based on Random Forest (a broadcast scenario) and the SVR-based model (a web-cast scenario). These models represent promising candidates for non-intrusive parametric audio quality assessment in the context of broadcasting systems and web-casting applications.
{"title":"A Benchmark of Non-intrusive Parametric Audio Quality Estimation Models for Broadcasting Systems and Web-casting Applications","authors":"M. Jakubik, P. Počta","doi":"10.15598/aeee.v19i4.4207","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4207","url":null,"abstract":"Due to the rising usage of various broadcasting systems and web-casting applications, a measurement of audio quality has become an essential task. This paper presents a benchmark of the parametric models for non-intrusive estimation of the audio quality perceived by the end user. The proposed solution is based on machine learning techniques for broadcasting systems and web-casting applications. The main goal of this study is to assess the performance of the non-intrusive parametric models as well as to evaluate a statistical significance of the performance differences between those models. The paper provides a comparison of several models based on the Support Vector Regression, Genetic Programming, Multigene Symbolic Regression, Neural Networks and Random Forest. The obtained results indicate that among the investigated models the most accurate, although not the fastest ones, are the model based on Random Forest (a broadcast scenario) and the SVR-based model (a web-cast scenario). These models represent promising candidates for non-intrusive parametric audio quality assessment in the context of broadcasting systems and web-casting applications.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48094592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4280
B. S. Premananda, Samana Hanumanth Manalogoli, K. Nikhil
In any wide-range processing system, rapid interconnecting networks are employed between the processing modules and embedded systems. This study deals with the optimized design and implementation of Switching Element (SE) which operates in four modes, accepting two inputs and delivering two outputs. The Shuffle-Exchange Network (SEN) can be used as a single-stage as well as a multi-stage network. SEN is used as an interconnection architecture which is implemented with exclusive input-output paths with simple design. The SE acts as a building block to the Multi-stage Shuffle-Exchange Network (M-SEN) with facilities to perform unicast and multicast operation on the inputs. An 8 × 8 M-SEN model is also implemented, which works in three modes of communication, termed as "One-to-One", "One-to-Many" and "One-to-All" M-SEN configuration. All the QCA circuits have been implemented and simulated using CAD tool QCADesigner. The proposed QCA-based M-SEN design is better in terms of area occupied by 14.63 %, average energy dissipation by 22.75 % and cell count with a reduction of 84 cells when compared to reference M-SEN architecture. The optimization of the design in terms of cell count and area results in lesser energy dissipation and hence can be used in future-generation complex networks and communication systems.
{"title":"Area and Energy Opimized QCA Based Shuffle-Exchange Network with Multicast and Broadcast Configuration","authors":"B. S. Premananda, Samana Hanumanth Manalogoli, K. Nikhil","doi":"10.15598/aeee.v19i4.4280","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4280","url":null,"abstract":"In any wide-range processing system, rapid interconnecting networks are employed between the processing modules and embedded systems. This study deals with the optimized design and implementation of Switching Element (SE) which operates in four modes, accepting two inputs and delivering two outputs. The Shuffle-Exchange Network (SEN) can be used as a single-stage as well as a multi-stage network. SEN is used as an interconnection architecture which is implemented with exclusive input-output paths with simple design. The SE acts as a building block to the Multi-stage Shuffle-Exchange Network (M-SEN) with facilities to perform unicast and multicast operation on the inputs. An 8 × 8 M-SEN model is also implemented, which works in three modes of communication, termed as \"One-to-One\", \"One-to-Many\" and \"One-to-All\" M-SEN configuration. All the QCA circuits have been implemented and simulated using CAD tool QCADesigner. The proposed QCA-based M-SEN design is better in terms of area occupied by 14.63 %, average energy dissipation by 22.75 % and cell count with a reduction of 84 cells when compared to reference M-SEN architecture. The optimization of the design in terms of cell count and area results in lesser energy dissipation and hence can be used in future-generation complex networks and communication systems.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46054542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.3820
S. Derrouiche
In this paper, we present the dependence of source resistance sensibility on the gate bias effect in a High Electron Mobility Transistor (HEMT) using the Drift-Diffus (D-D) model with the SILVACO Technology Computer-Aided Design (TCAD) tool. The obtained results show that the increases of gate bias effect on substrate lead to decreasing the source resistance of the simulated device. The reported increase in the effect of gate induces the increases of transferred holes concentration towards the source region and which induce the decreases of source resistance. The decrease of source resistance can also be made by reducing the buffer thickness which leads to an increase in the gate effect on the substrate. The source resistance value is influenced by the Drain-Induced Barrier Lowering (DIBL) effect where the rate of decreasing the source resistance will be decreasing consequently to increase the drain bias. The reduction of the source resistance induces the increase of device sensibility for lows values of current.
{"title":"Reducing the Source Resistance by Increasing the Gate Effect on Substrate for Future Terahertz HEMT Device","authors":"S. Derrouiche","doi":"10.15598/aeee.v19i4.3820","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.3820","url":null,"abstract":"In this paper, we present the dependence of source resistance sensibility on the gate bias effect in a High Electron Mobility Transistor (HEMT) using the Drift-Diffus (D-D) model with the SILVACO Technology Computer-Aided Design (TCAD) tool. The obtained results show that the increases of gate bias effect on substrate lead to decreasing the source resistance of the simulated device. The reported increase in the effect of gate induces the increases of transferred holes concentration towards the source region and which induce the decreases of source resistance. The decrease of source resistance can also be made by reducing the buffer thickness which leads to an increase in the gate effect on the substrate. The source resistance value is influenced by the Drain-Induced Barrier Lowering (DIBL) effect where the rate of decreasing the source resistance will be decreasing consequently to increase the drain bias. The reduction of the source resistance induces the increase of device sensibility for lows values of current.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42225047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-31DOI: 10.2174/2352096514666210930151744
Li Congshan, Zhong Pu, He Ping, Liu Yan, Fang Yan, Sheng Tingyu
{"title":"Comparison of two control strategies for VSC-MTDC with wind farm","authors":"Li Congshan, Zhong Pu, He Ping, Liu Yan, Fang Yan, Sheng Tingyu","doi":"10.2174/2352096514666210930151744","DOIUrl":"https://doi.org/10.2174/2352096514666210930151744","url":null,"abstract":"","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":"14 1","pages":"744-754"},"PeriodicalIF":0.6,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46858345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-03DOI: 10.15598/aeee.v19i3.4121
T. S. Arora, M. Gupta, Shiv Narain Gupta
{"title":"An Explicit Output Current-mode Quadrature Sinusoidal Oscillator and a Universal Filter Employing Only Grounded Passive Components - a Minimal Realisation","authors":"T. S. Arora, M. Gupta, Shiv Narain Gupta","doi":"10.15598/aeee.v19i3.4121","DOIUrl":"https://doi.org/10.15598/aeee.v19i3.4121","url":null,"abstract":"","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45737861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-03DOI: 10.15598/aeee.v19i3.4159
Jan Strossa, Vladislav Damec, M. Sobek, D. Kouril, Jakub Bača
{"title":"High Frequency Multipurpose SiC MOSFET Driver","authors":"Jan Strossa, Vladislav Damec, M. Sobek, D. Kouril, Jakub Bača","doi":"10.15598/aeee.v19i3.4159","DOIUrl":"https://doi.org/10.15598/aeee.v19i3.4159","url":null,"abstract":"","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":"129 2","pages":""},"PeriodicalIF":0.6,"publicationDate":"2021-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41255737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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