Pub Date : 2022-04-01DOI: 10.15598/aeee.v20i1.4229
Abhishek N. Tripathi, Arvind Rajawat
{"title":"Early Area and Power Estimation Model for Rapid System Level Design and Design Space Exploration","authors":"Abhishek N. Tripathi, Arvind Rajawat","doi":"10.15598/aeee.v20i1.4229","DOIUrl":"https://doi.org/10.15598/aeee.v20i1.4229","url":null,"abstract":"","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46872965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-01DOI: 10.15598/aeee.v20i1.4258
Priyansh Tripathi, N. Yadava, M. Gupta, R. Chauhan
. The choice of gate metal technology for junctionless transistors needs to have diverse characteristics as metals have distinct work functions and hence, they show incompatibility while tailoring threshold of the device. In such a scenario, bimetallic stacked gate can be a promising candidate to present wide range of tunable work functions required for nano-regime junctionless transistors. This paper explores the electronic phenomena occurring at metal-metal interface and the impact of Platinum (Pt)/Titanium (Ti) bimetallic stacked gate-based work function tunability on the RF and thermal performances of p-type window-based Silicon on Insulator Junctionless Transistor (SOI JLT) using numerical simulator SILVACO ATLAS. The parameters considered for performance evaluation are ON-state current ( I ON ), OFF-state current ( I OFF ), I ON / I OFF ratio, transconductance ( g m ), cutoff frequency ( f T ), Transconductance Frequency Product (TFP), Intrinsic Gate Delay (IGD), intrinsic gain ( A V ), and Global Device Temperature (GDT). The g m , f T , TFP, A V and GDT improve for modified over conventional in the ON state at higher work function, while IGD improves at lower work function. The improvements of 11.7 % and 2.21 % are obtained in maximum g m and f T , respectively, for modified transistor over conventional. The findings suggest that bimetallic stacked gate modified SOIJLT is a better op-tion than conventional for low-power RF application.
{"title":"Impact of Work Function Tunability on Thermal and RF Performance of P-type Window based Junctionless Transistor","authors":"Priyansh Tripathi, N. Yadava, M. Gupta, R. Chauhan","doi":"10.15598/aeee.v20i1.4258","DOIUrl":"https://doi.org/10.15598/aeee.v20i1.4258","url":null,"abstract":". The choice of gate metal technology for junctionless transistors needs to have diverse characteristics as metals have distinct work functions and hence, they show incompatibility while tailoring threshold of the device. In such a scenario, bimetallic stacked gate can be a promising candidate to present wide range of tunable work functions required for nano-regime junctionless transistors. This paper explores the electronic phenomena occurring at metal-metal interface and the impact of Platinum (Pt)/Titanium (Ti) bimetallic stacked gate-based work function tunability on the RF and thermal performances of p-type window-based Silicon on Insulator Junctionless Transistor (SOI JLT) using numerical simulator SILVACO ATLAS. The parameters considered for performance evaluation are ON-state current ( I ON ), OFF-state current ( I OFF ), I ON / I OFF ratio, transconductance ( g m ), cutoff frequency ( f T ), Transconductance Frequency Product (TFP), Intrinsic Gate Delay (IGD), intrinsic gain ( A V ), and Global Device Temperature (GDT). The g m , f T , TFP, A V and GDT improve for modified over conventional in the ON state at higher work function, while IGD improves at lower work function. The improvements of 11.7 % and 2.21 % are obtained in maximum g m and f T , respectively, for modified transistor over conventional. The findings suggest that bimetallic stacked gate modified SOIJLT is a better op-tion than conventional for low-power RF application.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47233678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-01DOI: 10.15598/aeee.v20i1.4138
J. Huran, V. Sasinková, M. Nozdrin, E. Kováčová, A. Kobzev, A. Kleinová
Very thin nanostructured carbon films were deposited on quartz substrate by reactive magnetron sputtering using graphite target and gas mixture of Ar and reactive gas N2 or N2+H2. Film thicknesses were in the range of 20–25 nm. Rutherford backscattering spectrometry and Elastic recoil detection analytical method determined the concentration of elements in the films. Scanning electron microscopy scanned the surface morphology of carbon films. Raman spectroscopy was used for chemical structural properties determination of very thin carbon films. Raman spectra intensities were fitted with Gaussian peaks. The photo-induced (pulsed laser 266 nm) electron emission properties of very thin nanostructured carbon films were investigated by the measurement of cathode bunch charge at different electric field and calculate quantum efficiency. The influence of different electric field on the photo-induced electron emission characteristics of prepared transmission photocathodes are discussed.
{"title":"Photo-induced Electron Emission of Nanostructured Carbon Thin Film Based Transmission Photocathodes at Different Electric Field","authors":"J. Huran, V. Sasinková, M. Nozdrin, E. Kováčová, A. Kobzev, A. Kleinová","doi":"10.15598/aeee.v20i1.4138","DOIUrl":"https://doi.org/10.15598/aeee.v20i1.4138","url":null,"abstract":"Very thin nanostructured carbon films were deposited on quartz substrate by reactive magnetron sputtering using graphite target and gas mixture of Ar and reactive gas N2 or N2+H2. Film thicknesses were in the range of 20–25 nm. Rutherford backscattering spectrometry and Elastic recoil detection analytical method determined the concentration of elements in the films. Scanning electron microscopy scanned the surface morphology of carbon films. Raman spectroscopy was used for chemical structural properties determination of very thin carbon films. Raman spectra intensities were fitted with Gaussian peaks. The photo-induced (pulsed laser 266 nm) electron emission properties of very thin nanostructured carbon films were investigated by the measurement of cathode bunch charge at different electric field and calculate quantum efficiency. The influence of different electric field on the photo-induced electron emission characteristics of prepared transmission photocathodes are discussed.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48315390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-01DOI: 10.15598/aeee.v20i1.4115
T. E. Kgakatsi, E. Golovins, Johan Venter
. This article presents an outline of Electric Transient Disturbances (ETDs), represented by the ElectroStatic Discharge (ESD) in accordance with the Human-Body Model (HBM), on the AC-DC transfer measurement standard, represented by the Single-Junction Thermal Converter (SJTC) Thermal Element (TE). Mitigation technique against the power dissipation build-up, higher than the operational margins recommended by a manufacturer, on the TE were proposed and modelled using Laplace Transform (LT) analysis. A mathematical model and an optimization algorithm were developed to determine the equivalent circuit model parameters of a Transient Overload Protection Module (TOPM) that would offer adequate protection against destructive power dissipation levels build-up on the TE. The mathematical model was developed using an 8 kV ESD, which was expected to deliver short-circuit current with a peak value of approx-imately 5 . 33 A through a load impedance of approxi-mately 1 m Ω . The ESD stress signal was injected into the TOPM connected in parallel with the TE. The active power dissipated by the SJTC TE per period of transient response was calculated from the current and voltage obtained from the mathematical analysis, and the results indicate a power dissipation of 10 mW by the TE. From the algorithm, the model parameter that noticeably influences the power dissipation capabilities of the TOPM is the inductance and it must be smaller than 1 . 2 nH. A CAD based simulation model was developed and analysed. The simulation results agreed with the mathematical model.
{"title":"ESD Stress Analysis and Suppression in a Single-Junction Thermal Converter","authors":"T. E. Kgakatsi, E. Golovins, Johan Venter","doi":"10.15598/aeee.v20i1.4115","DOIUrl":"https://doi.org/10.15598/aeee.v20i1.4115","url":null,"abstract":". This article presents an outline of Electric Transient Disturbances (ETDs), represented by the ElectroStatic Discharge (ESD) in accordance with the Human-Body Model (HBM), on the AC-DC transfer measurement standard, represented by the Single-Junction Thermal Converter (SJTC) Thermal Element (TE). Mitigation technique against the power dissipation build-up, higher than the operational margins recommended by a manufacturer, on the TE were proposed and modelled using Laplace Transform (LT) analysis. A mathematical model and an optimization algorithm were developed to determine the equivalent circuit model parameters of a Transient Overload Protection Module (TOPM) that would offer adequate protection against destructive power dissipation levels build-up on the TE. The mathematical model was developed using an 8 kV ESD, which was expected to deliver short-circuit current with a peak value of approx-imately 5 . 33 A through a load impedance of approxi-mately 1 m Ω . The ESD stress signal was injected into the TOPM connected in parallel with the TE. The active power dissipated by the SJTC TE per period of transient response was calculated from the current and voltage obtained from the mathematical analysis, and the results indicate a power dissipation of 10 mW by the TE. From the algorithm, the model parameter that noticeably influences the power dissipation capabilities of the TOPM is the inductance and it must be smaller than 1 . 2 nH. A CAD based simulation model was developed and analysed. The simulation results agreed with the mathematical model.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43035990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-01DOI: 10.15598/aeee.v20i1.4347
Z. Al-qudah, Khalid A. Darabkh
. In this paper, the Half-Duplex Relay Channel (HDRC) is thoroughly investigated. Even though this channel model is widely studied, the capacity is not yet fully understood and particularly has not been tightly expressed. In this work, a new capacity expression of the discrete memoryless HDRC is explic-itly established. In particular, a new expression of the achievable rate is derived by taking advantage of the well-known capacity results of both the degraded broadcast channel and the multiple access channel. Specifically, in order to obtain the achievable rate, the transmission from the source to destination is operated over two phases. In the first phase, the broadcast phase, the source broadcasts to both relay and destination. In the second phase, both source and relay transmit to destination to form multiple access channel. Then, we prove that the new achievable rate meets the cut-set outer bound such that the capacity of the discrete memoryless HDRC is attained. Next, the new derived capacity result is extended to the case of additive Gaussian channel. Further, the attained capacity is ana-lytically and then numerically shown to encompass all well-known available findings in the literature. Addi-tional numerical examples are also shown to present the cases in which the relay is beneficial and how the achievable capacity varies with the source-relay and relay-destination channel gains.
{"title":"A simple Encoding Scheme to Achieve the Capacity of Half-Duplex Relay Channel","authors":"Z. Al-qudah, Khalid A. Darabkh","doi":"10.15598/aeee.v20i1.4347","DOIUrl":"https://doi.org/10.15598/aeee.v20i1.4347","url":null,"abstract":". In this paper, the Half-Duplex Relay Channel (HDRC) is thoroughly investigated. Even though this channel model is widely studied, the capacity is not yet fully understood and particularly has not been tightly expressed. In this work, a new capacity expression of the discrete memoryless HDRC is explic-itly established. In particular, a new expression of the achievable rate is derived by taking advantage of the well-known capacity results of both the degraded broadcast channel and the multiple access channel. Specifically, in order to obtain the achievable rate, the transmission from the source to destination is operated over two phases. In the first phase, the broadcast phase, the source broadcasts to both relay and destination. In the second phase, both source and relay transmit to destination to form multiple access channel. Then, we prove that the new achievable rate meets the cut-set outer bound such that the capacity of the discrete memoryless HDRC is attained. Next, the new derived capacity result is extended to the case of additive Gaussian channel. Further, the attained capacity is ana-lytically and then numerically shown to encompass all well-known available findings in the literature. Addi-tional numerical examples are also shown to present the cases in which the relay is beneficial and how the achievable capacity varies with the source-relay and relay-destination channel gains.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42821180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-01DOI: 10.15598/aeee.v20i1.4355
Nguyen Thi Huyen, Duong Duc Ha, H. Pham
The determination of the buried objects and cracks in building structures is an important issue in real-life. In this paper, we propose a new method called Correlation Function Separation Technique (CFST) combine with the Lervenberg-Marquardt Algorithm (LMA) using the Impulse Radio Ultra-Wide Band (IR-UWB) penetrating system to improve the accuracy in detecting and positioning of the adjacent buried objects in building structures. Based on the UWB signal processing, the proposed method can be used to determine both the relative permittivity of the environment and the position of the buried objects, especially the adjacent objects. The analytical method is validated by mathematical proofs and Matlab simulations, and the position errors are used to assess the performance of proposed method. The numerical results shown that the proposed method can be used for positioning the adjacent buried objects in the homogeneous environment which has an average positioning error of 3.52 cm, which is smaller than that of the conventional method based on B-canned radar images processing.
{"title":"Positioning the Adjacent Buried Objects Using UWB Technology Combine with Levenberg Marquardt Algorithm","authors":"Nguyen Thi Huyen, Duong Duc Ha, H. Pham","doi":"10.15598/aeee.v20i1.4355","DOIUrl":"https://doi.org/10.15598/aeee.v20i1.4355","url":null,"abstract":"The determination of the buried objects and cracks in building structures is an important issue in real-life. In this paper, we propose a new method called Correlation Function Separation Technique (CFST) combine with the Lervenberg-Marquardt Algorithm (LMA) using the Impulse Radio Ultra-Wide Band (IR-UWB) penetrating system to improve the accuracy in detecting and positioning of the adjacent buried objects in building structures. Based on the UWB signal processing, the proposed method can be used to determine both the relative permittivity of the environment and the position of the buried objects, especially the adjacent objects. The analytical method is validated by mathematical proofs and Matlab simulations, and the position errors are used to assess the performance of proposed method. The numerical results shown that the proposed method can be used for positioning the adjacent buried objects in the homogeneous environment which has an average positioning error of 3.52 cm, which is smaller than that of the conventional method based on B-canned radar images processing.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45381363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4099
Adriana Lozinska, M. Badura, B. Ściana
Quantum cascade lasers are sophisticated devices mostly based on InGaAs/AlInAs/InP heterostructures to improve thermal performance. Their structure consists of a core containing hundreds or even thousands of thin layers, covered on both sides with thick cladding waveguides. Such a laser design creates enormous stresses in the core and can cause degradation of the entire device. An alternative to the thick InP claddings are thin, highly doped InGaAs layers used as plasmonic waveguides. This solution allows to achieve a mode confinement above 50 % even at only 150 nm of the waveguide layer, which is extremely difficult in the case of standard designs. The article presents theoretical simulations concerning the influence of the InGaAs plasmonic layer on the mode confinement.
{"title":"Concept of the InGaAs Plasmonic Waveguide for Quantum Cascade Laser Applications","authors":"Adriana Lozinska, M. Badura, B. Ściana","doi":"10.15598/aeee.v19i4.4099","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4099","url":null,"abstract":"Quantum cascade lasers are sophisticated devices mostly based on InGaAs/AlInAs/InP heterostructures to improve thermal performance. Their structure consists of a core containing hundreds or even thousands of thin layers, covered on both sides with thick cladding waveguides. Such a laser design creates enormous stresses in the core and can cause degradation of the entire device. An alternative to the thick InP claddings are thin, highly doped InGaAs layers used as plasmonic waveguides. This solution allows to achieve a mode confinement above 50 % even at only 150 nm of the waveguide layer, which is extremely difficult in the case of standard designs. The article presents theoretical simulations concerning the influence of the InGaAs plasmonic layer on the mode confinement.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48304766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4183
I. Ouachtouk, Soumia El Hani, K. Dahi
Research on data-driven bearing fault diagnosis techniques has recently drawn more and more attention due to the availability of massive condition monitoring data. The research work presented in this paper aims to develop an architecture for the detection and diagnosis of bearing faults in the induction machines. The developed data-oriented architecture uses vibration signals collected by sensors placed on the machine, which is based, in the first place, on the extraction of fault indicators based on the harmonics-to-noise ratio envelope. Normalisation is then applied to the extracted indicators to create a well-processed data set. The evolution of these indicators will be studied afterwards according to the type and severity of defects using sequential backward selection technique. Supervised machine learning classification methods are developed to classify the measurements described by the feature vector with respect to the known modes of operation. In the last phase concerning decision making, ten classifiers are tested and applied based on the selected and combined indicators. The developed classification methods allow classifying the observations, with respect to the different modes of bearing condition (outer race, inner race fault or healthy condition). The proposed method is validated on data collected using an experimental bearing test bench. The experimental results indicate that the proposed architecture achieves high accuracy in bearing fault detection under all operational conditions. The results show that, compared to some proposed approaches, our proposed architecture can achieve better performance overall in terms of the number of optimal features and the accuracy of the tests.
{"title":"Intelligent Bearing Fault Diagnosis Method Based on HNR Envelope and Classification Using Supervised Machine Learning Algorithms","authors":"I. Ouachtouk, Soumia El Hani, K. Dahi","doi":"10.15598/aeee.v19i4.4183","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4183","url":null,"abstract":"Research on data-driven bearing fault diagnosis techniques has recently drawn more and more attention due to the availability of massive condition monitoring data. The research work presented in this paper aims to develop an architecture for the detection and diagnosis of bearing faults in the induction machines. The developed data-oriented architecture uses vibration signals collected by sensors placed on the machine, which is based, in the first place, on the extraction of fault indicators based on the harmonics-to-noise ratio envelope. Normalisation is then applied to the extracted indicators to create a well-processed data set. The evolution of these indicators will be studied afterwards according to the type and severity of defects using sequential backward selection technique. Supervised machine learning classification methods are developed to classify the measurements described by the feature vector with respect to the known modes of operation. In the last phase concerning decision making, ten classifiers are tested and applied based on the selected and combined indicators. The developed classification methods allow classifying the observations, with respect to the different modes of bearing condition (outer race, inner race fault or healthy condition). The proposed method is validated on data collected using an experimental bearing test bench. The experimental results indicate that the proposed architecture achieves high accuracy in bearing fault detection under all operational conditions. The results show that, compared to some proposed approaches, our proposed architecture can achieve better performance overall in terms of the number of optimal features and the accuracy of the tests.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45820183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4136
J. Kozarik, J. Marek, A. Chvála, M. Minárik, K. Gasparek, M. Jagelka
On-die testing can accelerate development of semiconductor devices, but poses certain challenges related to high frequency and high current switching. This paper describes design and development of a tester for double-pulse switching test and measurement of dynamic on-state resistance of unpackaged High-ElectronMobility Transistors (GaN HEMTs). The tester is capable of switching an inductive load at drain-to-source voltage up to 400 V and drain current up to 10 A. Design challenges resulting from specific properties of GaN HEMTs and on-die measurement are explained, and solutions are proposed. Essential parts of the developed device are described, including low inductance gate-driver and measurement methods. Modified drain voltage clamping circuit for accurate on-state drain voltage measurement is described. The tester is constructed as a printed circuit board, integrated into a probe station. Voltage and current waveforms are measured with oscilloscope and used to calculate the on-resistance. Results of a reference measurement with commercially available packaged transistors are presented. Waveforms measured on experimental unpackaged normally-off GaN HEMT samples are also presented and discussed. The proposed tester device proved to be capable of performing the dynamic on-resistance measurement with satisfactory results.
{"title":"Development of a Device for On-Die Double-Pulse Testing and Measurement of Dynamic On-Resistance of GaN HEMTs","authors":"J. Kozarik, J. Marek, A. Chvála, M. Minárik, K. Gasparek, M. Jagelka","doi":"10.15598/aeee.v19i4.4136","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4136","url":null,"abstract":"On-die testing can accelerate development of semiconductor devices, but poses certain challenges related to high frequency and high current switching. This paper describes design and development of a tester for double-pulse switching test and measurement of dynamic on-state resistance of unpackaged High-ElectronMobility Transistors (GaN HEMTs). The tester is capable of switching an inductive load at drain-to-source voltage up to 400 V and drain current up to 10 A. Design challenges resulting from specific properties of GaN HEMTs and on-die measurement are explained, and solutions are proposed. Essential parts of the developed device are described, including low inductance gate-driver and measurement methods. Modified drain voltage clamping circuit for accurate on-state drain voltage measurement is described. The tester is constructed as a printed circuit board, integrated into a probe station. Voltage and current waveforms are measured with oscilloscope and used to calculate the on-resistance. Results of a reference measurement with commercially available packaged transistors are presented. Waveforms measured on experimental unpackaged normally-off GaN HEMT samples are also presented and discussed. The proposed tester device proved to be capable of performing the dynamic on-resistance measurement with satisfactory results.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42543320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.15598/aeee.v19i4.4203
Pooja Goel, Rahul Kaushik
The analysis of Optical Single Sideband (OSSB) generation with and without second-order sidebands for Radio over Fiber (RoF) is presented. The performance of systems based on hybrid coupler with distinct phase angle and Dual-Parallel Dual-Drive Mach-Zehnder Modulator (DP-DDMZM) is compared using simulation. Impact of parameters like SingleMode Fiber (SMF) length, Radiofrequency (RF) amplitude, and laser linewidth on Signal-to-Noise Ratio (SNR) has been investigated. It has been observed that eliminating one of the second-order sidebands with 120◦ hybrid coupler improves peak SNR in comparison to 90◦ hybrid coupler with both second-order sidebands and DP-DDMZM-based system without second-order sidebands irrespective of Continuous Wave (CW) laser linewidth.
{"title":"Analysis of Optical Single Sideband Modulators for Radio Over Fiber Link with and without Second Order Sidebands","authors":"Pooja Goel, Rahul Kaushik","doi":"10.15598/aeee.v19i4.4203","DOIUrl":"https://doi.org/10.15598/aeee.v19i4.4203","url":null,"abstract":"The analysis of Optical Single Sideband (OSSB) generation with and without second-order sidebands for Radio over Fiber (RoF) is presented. The performance of systems based on hybrid coupler with distinct phase angle and Dual-Parallel Dual-Drive Mach-Zehnder Modulator (DP-DDMZM) is compared using simulation. Impact of parameters like SingleMode Fiber (SMF) length, Radiofrequency (RF) amplitude, and laser linewidth on Signal-to-Noise Ratio (SNR) has been investigated. It has been observed that eliminating one of the second-order sidebands with 120◦ hybrid coupler improves peak SNR in comparison to 90◦ hybrid coupler with both second-order sidebands and DP-DDMZM-based system without second-order sidebands irrespective of Continuous Wave (CW) laser linewidth.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44624651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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