Pub Date : 2022-03-25DOI: 10.3389/felec.2022.825077
Victor Yon, A. Amirsoleimani, F. Alibart, R. Melko, D. Drouin, Y. Beilliard
Novel computing architectures based on resistive switching memories (also known as memristors or RRAMs) have been shown to be promising approaches for tackling the energy inefficiency of deep learning and spiking neural networks. However, resistive switch technology is immature and suffers from numerous imperfections, which are often considered limitations on implementations of artificial neural networks. Nevertheless, a reasonable amount of variability can be harnessed to implement efficient probabilistic or approximate computing. This approach turns out to improve robustness, decrease overfitting and reduce energy consumption for specific applications, such as Bayesian and spiking neural networks. Thus, certain non-idealities could become opportunities if we adapt machine learning methods to the intrinsic characteristics of resistive switching memories. In this short review, we introduce some key considerations for circuit design and the most common non-idealities. We illustrate the possible benefits of stochasticity and compression with examples of well-established software methods. We then present an overview of recent neural network implementations that exploit the imperfections of resistive switching memory, and discuss the potential and limitations of these approaches.
{"title":"Exploiting Non-idealities of Resistive Switching Memories for Efficient Machine Learning","authors":"Victor Yon, A. Amirsoleimani, F. Alibart, R. Melko, D. Drouin, Y. Beilliard","doi":"10.3389/felec.2022.825077","DOIUrl":"https://doi.org/10.3389/felec.2022.825077","url":null,"abstract":"Novel computing architectures based on resistive switching memories (also known as memristors or RRAMs) have been shown to be promising approaches for tackling the energy inefficiency of deep learning and spiking neural networks. However, resistive switch technology is immature and suffers from numerous imperfections, which are often considered limitations on implementations of artificial neural networks. Nevertheless, a reasonable amount of variability can be harnessed to implement efficient probabilistic or approximate computing. This approach turns out to improve robustness, decrease overfitting and reduce energy consumption for specific applications, such as Bayesian and spiking neural networks. Thus, certain non-idealities could become opportunities if we adapt machine learning methods to the intrinsic characteristics of resistive switching memories. In this short review, we introduce some key considerations for circuit design and the most common non-idealities. We illustrate the possible benefits of stochasticity and compression with examples of well-established software methods. We then present an overview of recent neural network implementations that exploit the imperfections of resistive switching memory, and discuss the potential and limitations of these approaches.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48161611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-25DOI: 10.3389/felec.2022.848618
M. Barreiro, Pablo Sánchez, Julián Vera, Matías Viera, Isabel Morales, Antonio Hector Dell´Osa, P. Bertemes-Filho, F. Simini
Electrical Impedance Tomography design can be simplified to obtain a low cost 16 electrodes edema monitoring clinical instrument by using voltage measurement multiplexing. Multiplexers introduce errors, which we have estimated by consecutive phantom measurements both using voltage multiplexers and by selecting the electrodes by hand, all other things being the same. Noise is taken care of by averaging. The EIDORS reconstruction of the phantom with multiplexed measurements is compared to the hand-selected electrode measurements reconstruction. The difference image obtained is considered an estimation of the multiplexer induced error. This measurement error is subtracted from the multiplexed object measurement matrix, giving a modified reconstruction which is closer to the hand-selected electrodes measurement based reconstruction than the multiplexed reconstruction. The quality factor of the uncorrected multiplexer obtained image of 57% is increased to 83% which is the best increase of three methods described. This suggests the benefit of a “calibration” phase for all 16 electrodes, prior to EIT reconstruction, using a set-up-specific “error matrix” to correct the data matrix before submission to the reconstruction method.
{"title":"Multiplexing Error and Noise Reduction in Electrical Impedance Tomography Imaging","authors":"M. Barreiro, Pablo Sánchez, Julián Vera, Matías Viera, Isabel Morales, Antonio Hector Dell´Osa, P. Bertemes-Filho, F. Simini","doi":"10.3389/felec.2022.848618","DOIUrl":"https://doi.org/10.3389/felec.2022.848618","url":null,"abstract":"Electrical Impedance Tomography design can be simplified to obtain a low cost 16 electrodes edema monitoring clinical instrument by using voltage measurement multiplexing. Multiplexers introduce errors, which we have estimated by consecutive phantom measurements both using voltage multiplexers and by selecting the electrodes by hand, all other things being the same. Noise is taken care of by averaging. The EIDORS reconstruction of the phantom with multiplexed measurements is compared to the hand-selected electrode measurements reconstruction. The difference image obtained is considered an estimation of the multiplexer induced error. This measurement error is subtracted from the multiplexed object measurement matrix, giving a modified reconstruction which is closer to the hand-selected electrodes measurement based reconstruction than the multiplexed reconstruction. The quality factor of the uncorrected multiplexer obtained image of 57% is increased to 83% which is the best increase of three methods described. This suggests the benefit of a “calibration” phase for all 16 electrodes, prior to EIT reconstruction, using a set-up-specific “error matrix” to correct the data matrix before submission to the reconstruction method.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42451218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-22DOI: 10.3389/felec.2022.813535
Arunprabaharan Subramanian, Mona Azimi, Cheng Yee Leong, S. Lee, C. Santato, F. Cicoira
Titanium dioxide (TiO2) is an abundant metal oxide, widely used in food industry, cosmetics, medicine, water treatment and electronic devices. TiO2 is of interest for next-generation indium-free thin-film transistors and ion-gated transistors due to its tunable optoelectronic properties, ambient stability, and solution processability. In this work, we fabricated TiO2 films using a wet chemical approach and demonstrated their transistor behavior with room temperature ionic liquids and aqueous electrolytes. In addition, we demonstrated the pH sensing behavior of the TiO2 IGTs with a sensitivity of ∼48 mV/pH. Furthermore, we demonstrated a low temperature (120°C), solution processed TiO2-based IGTs on flexible polyethylene terephthalate (PET) substrates, which were stable under moderate tensile bending.
{"title":"Solution-Processed Titanium Dioxide Ion-Gated Transistors and Their Application for pH Sensing","authors":"Arunprabaharan Subramanian, Mona Azimi, Cheng Yee Leong, S. Lee, C. Santato, F. Cicoira","doi":"10.3389/felec.2022.813535","DOIUrl":"https://doi.org/10.3389/felec.2022.813535","url":null,"abstract":"Titanium dioxide (TiO2) is an abundant metal oxide, widely used in food industry, cosmetics, medicine, water treatment and electronic devices. TiO2 is of interest for next-generation indium-free thin-film transistors and ion-gated transistors due to its tunable optoelectronic properties, ambient stability, and solution processability. In this work, we fabricated TiO2 films using a wet chemical approach and demonstrated their transistor behavior with room temperature ionic liquids and aqueous electrolytes. In addition, we demonstrated the pH sensing behavior of the TiO2 IGTs with a sensitivity of ∼48 mV/pH. Furthermore, we demonstrated a low temperature (120°C), solution processed TiO2-based IGTs on flexible polyethylene terephthalate (PET) substrates, which were stable under moderate tensile bending.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43182388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The switching patterns and gate resistor of the Si/SiC hybrid switch are the key to realizing its own highly efficient and reliable operation. However, as an important performance indicator, the common mode (CM) electromagnetic interference (EMI) noise caused by the Si/SiC hybrid switch lacks comprehensive research, which means that it is not clear how the switching patterns and gate resistor affect CM EMI. In this paper, the Si/SiC hybrid switch-based boost converter is established at first. Then, by analyzing the spectral characteristics of the CM voltage of the Si/SiC hybrid switch, the CM EMI generation characteristics of the Si/SiC hybrid switch at different switching patterns and gate resistors are revealed. Furthermore, the analysis and experimental results can be used to comprehensively guide the design of the gate drive pattern, gate resistor, and EMI suppression strategy.
{"title":"Study on the CM EMI Generation Characteristics of the Si/SiC Hybrid Switch at Different Switching Patterns and Gate Resistors","authors":"Yong Zhu, Zishun Peng, Yuxing Dai, Zhenxing Zhao, Zeng Liu, Zijie Zheng","doi":"10.3389/felec.2021.789902","DOIUrl":"https://doi.org/10.3389/felec.2021.789902","url":null,"abstract":"The switching patterns and gate resistor of the Si/SiC hybrid switch are the key to realizing its own highly efficient and reliable operation. However, as an important performance indicator, the common mode (CM) electromagnetic interference (EMI) noise caused by the Si/SiC hybrid switch lacks comprehensive research, which means that it is not clear how the switching patterns and gate resistor affect CM EMI. In this paper, the Si/SiC hybrid switch-based boost converter is established at first. Then, by analyzing the spectral characteristics of the CM voltage of the Si/SiC hybrid switch, the CM EMI generation characteristics of the Si/SiC hybrid switch at different switching patterns and gate resistors are revealed. Furthermore, the analysis and experimental results can be used to comprehensively guide the design of the gate drive pattern, gate resistor, and EMI suppression strategy.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41870135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-09DOI: 10.3389/felec.2022.838472
A. Falco, Antonio Marín-Sánchez, F. Loghin, Encarnación Castillo, A. Salinas-Castillo, J. F. Salmerón, A. Rivadeneyra
Flexible and thin-film humidity sensors are currently attracting the attention of the scientific community due to their portability and reduced size, which are highly useful traits for use in the Internet o Things (IoT) industry. Furthermore, in order to perform efficient and profitable mass production, it is necessary to develop a cost-effective and reproducible fabrication process and materials. Green fabrication methods and biodegradable materials would also minimize the environmental impact and create a sustainable IoT development. In this paper, flexible humidity sensors based on a common salt (NaCl) sensing layer are reported. Our sensors and the fabrication techniques employed, such as dip and spray coating, provide a biodegradable, low cost, and highly reproducible device. One of the sensors reported presents a typical resistive behaviour from 40% RH up to 85% RH with a sensitivity of −0.21 (Z/%RH). The performance of the sensors obtained with several fabrication techniques is studied and reported at multiple frequencies from 100 Hz to 10 MHz, showcasing its versatility and robustness.
{"title":"Paper and Salt: Biodegradable NaCl-Based Humidity Sensors for Sustainable Electronics","authors":"A. Falco, Antonio Marín-Sánchez, F. Loghin, Encarnación Castillo, A. Salinas-Castillo, J. F. Salmerón, A. Rivadeneyra","doi":"10.3389/felec.2022.838472","DOIUrl":"https://doi.org/10.3389/felec.2022.838472","url":null,"abstract":"Flexible and thin-film humidity sensors are currently attracting the attention of the scientific community due to their portability and reduced size, which are highly useful traits for use in the Internet o Things (IoT) industry. Furthermore, in order to perform efficient and profitable mass production, it is necessary to develop a cost-effective and reproducible fabrication process and materials. Green fabrication methods and biodegradable materials would also minimize the environmental impact and create a sustainable IoT development. In this paper, flexible humidity sensors based on a common salt (NaCl) sensing layer are reported. Our sensors and the fabrication techniques employed, such as dip and spray coating, provide a biodegradable, low cost, and highly reproducible device. One of the sensors reported presents a typical resistive behaviour from 40% RH up to 85% RH with a sensitivity of −0.21 (Z/%RH). The performance of the sensors obtained with several fabrication techniques is studied and reported at multiple frequencies from 100 Hz to 10 MHz, showcasing its versatility and robustness.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48741437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-03DOI: 10.3389/felec.2021.790081
H. Son, James D. Weiland
Independent travelling is a significant challenge for visually impaired people in urban settings. Traditional and widely used aids such as guide dogs and long canes provide basic guidance and obstacle avoidance but are not sufficient for complex situations such as street crossing. We propose a new wearable system that can safely guide a user with visual impairment at a signalized crosswalk. Safe street crossing is an important element of fully independent travelling for people who are blind or visually impaired (BVI), but street crossing is challenging for BVI because it involves several steps reliant on vision, including scene understanding, localization, object detection, path planning, and path following. Street crossing also requires timely completion. Prior solutions for guiding BVI in crosswalks have focused on either detection of crosswalks or classifying crosswalks signs. In this paper, we demonstrate a system that performs all the functions necessary to safely guide BVI at a signalized crosswalk. Our system utilizes prior maps, similar to how autonomous vehicles are guided. The hardware components are lightweight such that they can be wearable and mobile, and all are commercially available. The system operates in real-time. Computer vision algorithms (Orbslam2) localize the user in the map and orient them to the crosswalk. The state of the crosswalk signal (don’t walk or walk) is detected (using a convolutional neural network), the user is notified (via verbal instructions) when it is safe to cross, and the user is guided (via verbal instructions) along a path towards a destination on the prior map. The system continually updates user position relative to the path and corrects the user’s trajectory with simple verbal commands. We demonstrate the system functionality in three BVI participants. With brief training, all three were able to use the system to successfully navigate a crosswalk in a safe manner.
{"title":"Wearable System to Guide Crosswalk Navigation for People With Visual Impairment","authors":"H. Son, James D. Weiland","doi":"10.3389/felec.2021.790081","DOIUrl":"https://doi.org/10.3389/felec.2021.790081","url":null,"abstract":"Independent travelling is a significant challenge for visually impaired people in urban settings. Traditional and widely used aids such as guide dogs and long canes provide basic guidance and obstacle avoidance but are not sufficient for complex situations such as street crossing. We propose a new wearable system that can safely guide a user with visual impairment at a signalized crosswalk. Safe street crossing is an important element of fully independent travelling for people who are blind or visually impaired (BVI), but street crossing is challenging for BVI because it involves several steps reliant on vision, including scene understanding, localization, object detection, path planning, and path following. Street crossing also requires timely completion. Prior solutions for guiding BVI in crosswalks have focused on either detection of crosswalks or classifying crosswalks signs. In this paper, we demonstrate a system that performs all the functions necessary to safely guide BVI at a signalized crosswalk. Our system utilizes prior maps, similar to how autonomous vehicles are guided. The hardware components are lightweight such that they can be wearable and mobile, and all are commercially available. The system operates in real-time. Computer vision algorithms (Orbslam2) localize the user in the map and orient them to the crosswalk. The state of the crosswalk signal (don’t walk or walk) is detected (using a convolutional neural network), the user is notified (via verbal instructions) when it is safe to cross, and the user is guided (via verbal instructions) along a path towards a destination on the prior map. The system continually updates user position relative to the path and corrects the user’s trajectory with simple verbal commands. We demonstrate the system functionality in three BVI participants. With brief training, all three were able to use the system to successfully navigate a crosswalk in a safe manner.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46268130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-18DOI: 10.3389/felec.2022.834146
G. Singh, Ankit Wagle, S. Khatri, S. Vrudhula
This paper presents a DRAM-based processing-in-memory (PIM) architecture, called CIDAN-XE. It contains a novel computing unit called the neuron processing element (NPE). Each NPE can perform a variety of operations that include logical, arithmetic, relational, and predicate operations on multi-bit operands. Furthermore, they can be reconfigured to switch operations during run-time without increasing the overall latency or power of the operation. Since NPEs consume a small area and can operate at very high frequencies, they can be integrated inside the DRAM without disrupting its organization or timing constraints. Simulation results on a set of operations such as AND, OR, XOR, addition, multiplication, etc., show that CIDAN-XE achieves an average throughput improvement of 72X/5.4X and energy efficiency improvement of 244X/29X over CPU/GPU. To further demonstrate the benefits of using CIDAN-XE, we implement several convolutional neural networks and show that CIDAN-XE can improve upon the throughput and energy efficiency over the latest PIM architectures.
{"title":"CIDAN-XE: Computing in DRAM with Artificial Neurons","authors":"G. Singh, Ankit Wagle, S. Khatri, S. Vrudhula","doi":"10.3389/felec.2022.834146","DOIUrl":"https://doi.org/10.3389/felec.2022.834146","url":null,"abstract":"This paper presents a DRAM-based processing-in-memory (PIM) architecture, called CIDAN-XE. It contains a novel computing unit called the neuron processing element (NPE). Each NPE can perform a variety of operations that include logical, arithmetic, relational, and predicate operations on multi-bit operands. Furthermore, they can be reconfigured to switch operations during run-time without increasing the overall latency or power of the operation. Since NPEs consume a small area and can operate at very high frequencies, they can be integrated inside the DRAM without disrupting its organization or timing constraints. Simulation results on a set of operations such as AND, OR, XOR, addition, multiplication, etc., show that CIDAN-XE achieves an average throughput improvement of 72X/5.4X and energy efficiency improvement of 244X/29X over CPU/GPU. To further demonstrate the benefits of using CIDAN-XE, we implement several convolutional neural networks and show that CIDAN-XE can improve upon the throughput and energy efficiency over the latest PIM architectures.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46074815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-18DOI: 10.3389/felec.2022.833260
Simon Thomann, Hong L. G. Nguyen, P. Genssler, H. Amrouch
The separation of computing units and memory in the computer architecture mandates energy-intensive data transfers creating the von Neumann bottleneck. This bottleneck is exposed at the application level by the steady growth of IoT and data-centric deep learning algorithms demanding extraordinary throughput. On the hardware level, analog Processing-in-Memory (PiM) schemes are used to build platforms that eliminate the compute-memory gap to overcome the von Neumann bottleneck. PiM can be efficiently implemented with ferroelectric transistors (FeFET), an emerging non-volatile memory technology. However, PiM and FeFET are heavily impacted by process variation, especially in sub 14 nm technology nodes, reducing the reliability and thus inducing errors. Brain-inspired Hyperdimensional Computing (HDC) is robust against such errors. Further, it is able to learn from very little data cutting energy-intensive transfers. Hence, HDC, in combination with PiM, tackles the von Neumann bottleneck at both levels. Nevertheless, the analog nature of PiM schemes necessitates the conversion of results to digital, which is often not considered. Yet, the conversion introduces large overheads and diminishes the PiM efficiency. In this paper, we propose an all-in-memory scheme performing computation and conversion at once, utilizing programmable FeFET synapses to build the comparator used for the conversion. Our experimental setup is first calibrated against Intel 14 nm FinFET technology for both transistor electrical characteristics and variability. Then, a physics-based model of ferroelectric is included to realize the Fe-FinFETs. Using this setup, we analyze the circuit’s susceptibility to process variation, derive a comprehensive error probability model, and inject it into the inference algorithm of HDC. The robustness of HDC against noise and errors is able to withstand the high error probabilities with a loss of merely 0.3% inference accuracy.
{"title":"All-in-Memory Brain-Inspired Computing Using FeFET Synapses","authors":"Simon Thomann, Hong L. G. Nguyen, P. Genssler, H. Amrouch","doi":"10.3389/felec.2022.833260","DOIUrl":"https://doi.org/10.3389/felec.2022.833260","url":null,"abstract":"The separation of computing units and memory in the computer architecture mandates energy-intensive data transfers creating the von Neumann bottleneck. This bottleneck is exposed at the application level by the steady growth of IoT and data-centric deep learning algorithms demanding extraordinary throughput. On the hardware level, analog Processing-in-Memory (PiM) schemes are used to build platforms that eliminate the compute-memory gap to overcome the von Neumann bottleneck. PiM can be efficiently implemented with ferroelectric transistors (FeFET), an emerging non-volatile memory technology. However, PiM and FeFET are heavily impacted by process variation, especially in sub 14 nm technology nodes, reducing the reliability and thus inducing errors. Brain-inspired Hyperdimensional Computing (HDC) is robust against such errors. Further, it is able to learn from very little data cutting energy-intensive transfers. Hence, HDC, in combination with PiM, tackles the von Neumann bottleneck at both levels. Nevertheless, the analog nature of PiM schemes necessitates the conversion of results to digital, which is often not considered. Yet, the conversion introduces large overheads and diminishes the PiM efficiency. In this paper, we propose an all-in-memory scheme performing computation and conversion at once, utilizing programmable FeFET synapses to build the comparator used for the conversion. Our experimental setup is first calibrated against Intel 14 nm FinFET technology for both transistor electrical characteristics and variability. Then, a physics-based model of ferroelectric is included to realize the Fe-FinFETs. Using this setup, we analyze the circuit’s susceptibility to process variation, derive a comprehensive error probability model, and inject it into the inference algorithm of HDC. The robustness of HDC against noise and errors is able to withstand the high error probabilities with a loss of merely 0.3% inference accuracy.","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41639772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-07DOI: 10.3389/felec.2022.837260
R. Mastria, V. Pecunia, A. Rizzo
Over the last couple of decades, the development of innovative hybrid materials, spanning from colloidal nanocrystals to hybrid halide perovskites, has offered novel and unpredictable functionalities. This fact has stimulated the development of optoelectronic devices with the potential of overcoming technological and cost constraints of current inorganic counterparts. In this research topic, we have collected a selection of both original research and review articles covering different hybrid material synthesis and device application aspects. These articles also demonstrate the increasing interest in the development of emerging innovative hybrid materials for next-generation optoelectronic devices. Thanks to their outstanding photophysical prerogatives, metal halide perovskites are among the most appealing materials for innovative optoelectronic device applications. Nonetheless, the development of lead-free perovskites is a highly desirable prospect in view of a truly industrial deployment. In this frame, Veronese et al. report the development of a series of lead-free perovskite colloidal nanocrystals compositions Cs2SnX6 (X = Br, I) with different shapes. Tin-halide perovskitebased nanocrystals were selected as a valid alternative to lead. Since Sn (II) tends to easily oxidize into Sn (IV), tin-based perovskites suffer in general from a severe chemical instability that deteriorates their photophysical and optoelectronic properties. To overcome the oxidation issue of tin, the authors propose a modified hot-injection procedure in which Sn (II) can be replaced with Sn (IV). Varying the metal oxidation number results in the formation of a new crystal structure: the so-called vacancy-ordered double perovskite. They screen the effect of various surface ligands, finding that long-chain oleic acid ligands induce the formation of 3D colloidal nanocrystals, whereas shorter chain amines favour the growth of 2D nanoplatelets. A complete picture of the correlation between crystalline structure and optical properties of the as developed lead-free nanocrystal with the ligand molecule length and the nanocrystal shape is offered. Another burgeoning family of materials that have captured considerable interest for optoelectronic applications involves quasi-zero-dimensional halide perovskite derivatives. Given the diversity of their embodiments, properties, and applications, the review article by Trifiletti et al. on the topic constitutes a particularly valuable contribution as it provides a comprehensive, crosssectional picture of the status of this area. A great deal of different materials is discussed, including lead-based compounds as well as lead-free ones—e.g., based on tin, bismuth, and antimony—while highlighting the salient similarities and differences between hybrid and fully inorganic embodiments. A particular merit of this review lies in the discussion of the materials and their properties through a uniquely comprehensive treatment of the corresponding p
{"title":"Editorial: Next Generation Optoelectronics With Emerging Hybrid Materials","authors":"R. Mastria, V. Pecunia, A. Rizzo","doi":"10.3389/felec.2022.837260","DOIUrl":"https://doi.org/10.3389/felec.2022.837260","url":null,"abstract":"Over the last couple of decades, the development of innovative hybrid materials, spanning from colloidal nanocrystals to hybrid halide perovskites, has offered novel and unpredictable functionalities. This fact has stimulated the development of optoelectronic devices with the potential of overcoming technological and cost constraints of current inorganic counterparts. In this research topic, we have collected a selection of both original research and review articles covering different hybrid material synthesis and device application aspects. These articles also demonstrate the increasing interest in the development of emerging innovative hybrid materials for next-generation optoelectronic devices. Thanks to their outstanding photophysical prerogatives, metal halide perovskites are among the most appealing materials for innovative optoelectronic device applications. Nonetheless, the development of lead-free perovskites is a highly desirable prospect in view of a truly industrial deployment. In this frame, Veronese et al. report the development of a series of lead-free perovskite colloidal nanocrystals compositions Cs2SnX6 (X = Br, I) with different shapes. Tin-halide perovskitebased nanocrystals were selected as a valid alternative to lead. Since Sn (II) tends to easily oxidize into Sn (IV), tin-based perovskites suffer in general from a severe chemical instability that deteriorates their photophysical and optoelectronic properties. To overcome the oxidation issue of tin, the authors propose a modified hot-injection procedure in which Sn (II) can be replaced with Sn (IV). Varying the metal oxidation number results in the formation of a new crystal structure: the so-called vacancy-ordered double perovskite. They screen the effect of various surface ligands, finding that long-chain oleic acid ligands induce the formation of 3D colloidal nanocrystals, whereas shorter chain amines favour the growth of 2D nanoplatelets. A complete picture of the correlation between crystalline structure and optical properties of the as developed lead-free nanocrystal with the ligand molecule length and the nanocrystal shape is offered. Another burgeoning family of materials that have captured considerable interest for optoelectronic applications involves quasi-zero-dimensional halide perovskite derivatives. Given the diversity of their embodiments, properties, and applications, the review article by Trifiletti et al. on the topic constitutes a particularly valuable contribution as it provides a comprehensive, crosssectional picture of the status of this area. A great deal of different materials is discussed, including lead-based compounds as well as lead-free ones—e.g., based on tin, bismuth, and antimony—while highlighting the salient similarities and differences between hybrid and fully inorganic embodiments. A particular merit of this review lies in the discussion of the materials and their properties through a uniquely comprehensive treatment of the corresponding p","PeriodicalId":73081,"journal":{"name":"Frontiers in electronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46839931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-03DOI: 10.3389/felec.2021.807051
David Yang, Shovan Maity, Shreyas Sen
Human body communication (HBC) has recently emerged as an alternative method to connect devices on and around the human body utilizing the electrical conductivity properties of the human body. HBC can be utilized to enable new interaction modalities between computing devices by enhancing the natural interaction of touch. It also provides the inherent benefit of security and energy-efficiency compared to a traditional wireless communication, such as Bluetooth, making it an attractive alternative. However, most state-of-the-art HBC demonstrations show communication between a wearable and an Earth ground–connected device, and there have been very few implementations of HBC systems demonstrating communication between two wearable devices. Also, most of the HBC implementations suffer from the problem of signal leakage out of the body which enables communication even without direct contact with the body. In this article, we present BodyWire which uses an electro-quasistatic HBC (EQS-HBC) technique to enable communication between two wearable devices and also confine the signal to a very close proximity to the body. We characterize the human body channel loss under different environment (office desk, laboratory, and outdoors), posture, and body location conditions to ascertain the effect of each of these on the overall channel loss. The measurement results show that the channel loss varies within a range of 15dB across all different posture, environmental conditions, and body location variation, illustrating the dynamic range of the signal available at the input of any receiver. Leakage measurements are also carried out from the devices to show the distance over which the signal is available away from the body to illustrate the security aspect of HBC and show its effect on the channel loss measurements. For the first time, a through-body interhuman channel loss characterization is presented. Finally, a demonstration of secure interhuman information exchange between two battery-operated wearable devices is shown through the BodyWire prototype, which shows the smallest form factor HBC demonstration according to the authors’ best knowledge.
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