E. Kutlu-Narin, P. Narin, S. B. Lişesivdin, B. Sarikavak-Lisesivdin
This study focuses on the growth and physical properties of ZnO thin films on different substrates grown by mist-CVD enhanced with ozone (O3) gas produced by corona discharge plasma using O2. Here, O3 is used to eliminate the defects related to oxygen in ZnO thin films. ZnO thin films are grown on amorphous soda-lime glass (SLG) and single crystals SiO2/Si (100) and c-plane Al2O3 substrates at 350°C of low growth temperature. All ZnO thin films show dominant (0002) diffraction peaks from X-ray diffraction (XRD). As expected, full width at half maximum (FWHM) of (0002) is decreasing in ZnO thin films on single-crystal substrates, especially c-Al2O3 due to similar crystal structure. It is found that the strain in the films is lowest in ZnO/c-Al2O3. The surface morphologies of the thin films are studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. Grown ZnO films have a hexagonal and triangular nanostructure with different nanostructure sizes depending on the used substrate types. The calculated surface roughness is dramatically decreased in ZnO/c-Al2O3 compared to the other grown structures. The confocal Raman measurements show the E2(H) peak of ZnO thin films at 437 cm−1. It is suggested that O3 gas produced by corona discharge plasma using O2 can be useful to obtain better crystal quality and physical properties in ZnO thin films.
{"title":"Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma","authors":"E. Kutlu-Narin, P. Narin, S. B. Lişesivdin, B. Sarikavak-Lisesivdin","doi":"10.1155/2021/1130829","DOIUrl":"https://doi.org/10.1155/2021/1130829","url":null,"abstract":"This study focuses on the growth and physical properties of ZnO thin films on different substrates grown by mist-CVD enhanced with ozone (O3) gas produced by corona discharge plasma using O2. Here, O3 is used to eliminate the defects related to oxygen in ZnO thin films. ZnO thin films are grown on amorphous soda-lime glass (SLG) and single crystals SiO2/Si (100) and c-plane Al2O3 substrates at 350°C of low growth temperature. All ZnO thin films show dominant (0002) diffraction peaks from X-ray diffraction (XRD). As expected, full width at half maximum (FWHM) of (0002) is decreasing in ZnO thin films on single-crystal substrates, especially c-Al2O3 due to similar crystal structure. It is found that the strain in the films is lowest in ZnO/c-Al2O3. The surface morphologies of the thin films are studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. Grown ZnO films have a hexagonal and triangular nanostructure with different nanostructure sizes depending on the used substrate types. The calculated surface roughness is dramatically decreased in ZnO/c-Al2O3 compared to the other grown structures. The confocal Raman measurements show the E2(H) peak of ZnO thin films at 437 cm−1. It is suggested that O3 gas produced by corona discharge plasma using O2 can be useful to obtain better crystal quality and physical properties in ZnO thin films.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"49 6 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88666638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The contact is the core element of the vacuum interrupter of the mechanical DC circuit breaker. The electrical conductivity and welding resistance of the material directly affect its stability and reliability. AgSnO2 contact material has low resistivity, welding resistance, and so on. This material occupies an important position of the circuit breaker contact material. This research is based on the first-principles analysis method of density functional theory. The article calculated the lattice constant, enthalpy change, energy band, electronic density of state, charge density distribution, population, and conductivity of Ce, C single-doped, and Ce-C codoped SnO2 systems. The results show that Ce, C single doping, and Ce-C codoping all increase the cell volume and lattice constant. When the elements are codoped, the enthalpy change is the largest, and the thermal stability is the best. It has the smallest bandgap, the most impurity energy levels, and the least energy required for electronic transitions. The 4f orbital electrons of the Ce atom and the 2p orbital electrons of C are the sources of impurity energy near the Fermi level. When the elements are codoped, more impurity energy levels are generated at the bottom of the conduction band and the top of the valence band. Its bandgap is reduced so conductivity is improved. From the charge density and population analysis, the number of free electrons of Ce atoms and C atoms is redistributed after codoping. It forms a Ce-C covalent bond to further increase the degree of commonality of electrons and enhance the metallicity. The conductivity analysis shows that both single-doped and codoped conductivity have been improved. When the elements are codoped, the conductivity is the largest, and the conductivity is the best.
{"title":"First-Principles Calculation of Conductivity of Ce-C Codoped SnO2 Contacts","authors":"Can Ding, Zhenjiang Gao, Xing Hu, Zhao Yuan","doi":"10.1155/2021/4346979","DOIUrl":"https://doi.org/10.1155/2021/4346979","url":null,"abstract":"The contact is the core element of the vacuum interrupter of the mechanical DC circuit breaker. The electrical conductivity and welding resistance of the material directly affect its stability and reliability. AgSnO2 contact material has low resistivity, welding resistance, and so on. This material occupies an important position of the circuit breaker contact material. This research is based on the first-principles analysis method of density functional theory. The article calculated the lattice constant, enthalpy change, energy band, electronic density of state, charge density distribution, population, and conductivity of Ce, C single-doped, and Ce-C codoped SnO2 systems. The results show that Ce, C single doping, and Ce-C codoping all increase the cell volume and lattice constant. When the elements are codoped, the enthalpy change is the largest, and the thermal stability is the best. It has the smallest bandgap, the most impurity energy levels, and the least energy required for electronic transitions. The 4f orbital electrons of the Ce atom and the 2p orbital electrons of C are the sources of impurity energy near the Fermi level. When the elements are codoped, more impurity energy levels are generated at the bottom of the conduction band and the top of the valence band. Its bandgap is reduced so conductivity is improved. From the charge density and population analysis, the number of free electrons of Ce atoms and C atoms is redistributed after codoping. It forms a Ce-C covalent bond to further increase the degree of commonality of electrons and enhance the metallicity. The conductivity analysis shows that both single-doped and codoped conductivity have been improved. When the elements are codoped, the conductivity is the largest, and the conductivity is the best.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"35 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75648362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The thermoelectric properties of zigzag graphene nanoribbons (ZGNRs) are sensitive to chemical modification. In this study, we employed density functional theory (DFT) combined with the nonequilibrium green’s function (NEGF) formalism to investigate the thermoelectric properties of a ZGNR system by impurity substitution of single and double nitrogen (N) atoms into the edge of the nanoribbon. N-doping changes the electronic transmission probability near the Fermi energy and suppresses the phononic transmission. This results in a modified electrical conductance, thermal conductance, and thermopower. Ultimately, simultaneous increase of the thermopower and suppression of the electron and phonon contributions to the thermal conductance leads to the significant enhancement of the figure of merit in the perturbed (i.e., doped) system compared to the unperturbed (i.e., nondoped) system. Increasing the number of dopants not only changes the nature of transport and the sign of thermopower but also further suppresses the electron and phonon contributions to the thermal conductance, resulting in an enhanced thermoelectric figure of merit. Our results may be relevant for the development of ZGNR devices with enhanced thermoelectric efficiency.
{"title":"Impurity Substitution Enhances Thermoelectric Figure of Merit in Zigzag Graphene Nanoribbons","authors":"Saeideh Ramezani Akbarabadi, Mojtaba Madadi Asl","doi":"10.1155/2021/8110754","DOIUrl":"https://doi.org/10.1155/2021/8110754","url":null,"abstract":"The thermoelectric properties of zigzag graphene nanoribbons (ZGNRs) are sensitive to chemical modification. In this study, we employed density functional theory (DFT) combined with the nonequilibrium green’s function (NEGF) formalism to investigate the thermoelectric properties of a ZGNR system by impurity substitution of single and double nitrogen (N) atoms into the edge of the nanoribbon. N-doping changes the electronic transmission probability near the Fermi energy and suppresses the phononic transmission. This results in a modified electrical conductance, thermal conductance, and thermopower. Ultimately, simultaneous increase of the thermopower and suppression of the electron and phonon contributions to the thermal conductance leads to the significant enhancement of the figure of merit in the perturbed (i.e., doped) system compared to the unperturbed (i.e., nondoped) system. Increasing the number of dopants not only changes the nature of transport and the sign of thermopower but also further suppresses the electron and phonon contributions to the thermal conductance, resulting in an enhanced thermoelectric figure of merit. Our results may be relevant for the development of ZGNR devices with enhanced thermoelectric efficiency.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"16 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75207069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mengya Wang, R. Cao, Jiezhen Xia, Luchao Zhao, Yong Li, Qimi Ciren, D. Zhao, Shifeng Wang, Chunmiao Du, Qi Wu
Low pressure and anoxia are the main characteristics of the environment in the Tibetan Plateau, which means people living there have a large demand for oxygen to reduce the symptoms of altitude sickness. Pressure swing adsorption (PSA) is a competitive oxygen production technology in plateau areas, which relies on the molecular sieves for the separation of N2 and O2 in industry and portable medical equipment. The adsorption characteristics of the Faujasite-type (FAU) molecular sieves, as one kind of the most widely used adsorbents for O2 production, depend on the properties, amount, and distribution of the skeleton cations and atoms. In this paper, we explore the isomorphic substitution effect on the adsorption properties of N2 in FAU molecular sieves using the computational approaches based on the density functional theory (DFT). The structural analysis and adsorption energy calculated for the Zn, Ca, and Ga substitutions at the Si/Al skeleton sites in the β-cage structure, the basic unit of FAU molecular sieves, prove that the isomorphic substitution effect can strengthen the adsorption of N2. The Bader charge and density of states analysis validate the formation of electron-deficient holes near the Fermi level and hence strengthen the local polarity of the pore structure and enhance the adsorption of N2 molecules. The work about isomorphic substitution on the FAU molecular sieves might provide an insight into heteroatom isomorphic modification mechanisms and designing excellent air separation materials.
{"title":"Density Functional Theory Study on the Effect of Isomorphic Substitution of FAU Molecular Sieve on N2 Adsorption Performance","authors":"Mengya Wang, R. Cao, Jiezhen Xia, Luchao Zhao, Yong Li, Qimi Ciren, D. Zhao, Shifeng Wang, Chunmiao Du, Qi Wu","doi":"10.1155/2021/2370816","DOIUrl":"https://doi.org/10.1155/2021/2370816","url":null,"abstract":"Low pressure and anoxia are the main characteristics of the environment in the Tibetan Plateau, which means people living there have a large demand for oxygen to reduce the symptoms of altitude sickness. Pressure swing adsorption (PSA) is a competitive oxygen production technology in plateau areas, which relies on the molecular sieves for the separation of N2 and O2 in industry and portable medical equipment. The adsorption characteristics of the Faujasite-type (FAU) molecular sieves, as one kind of the most widely used adsorbents for O2 production, depend on the properties, amount, and distribution of the skeleton cations and atoms. In this paper, we explore the isomorphic substitution effect on the adsorption properties of N2 in FAU molecular sieves using the computational approaches based on the density functional theory (DFT). The structural analysis and adsorption energy calculated for the Zn, Ca, and Ga substitutions at the Si/Al skeleton sites in the β-cage structure, the basic unit of FAU molecular sieves, prove that the isomorphic substitution effect can strengthen the adsorption of N2. The Bader charge and density of states analysis validate the formation of electron-deficient holes near the Fermi level and hence strengthen the local polarity of the pore structure and enhance the adsorption of N2 molecules. The work about isomorphic substitution on the FAU molecular sieves might provide an insight into heteroatom isomorphic modification mechanisms and designing excellent air separation materials.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"51 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86835671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Saidov, D. Saparov, Sh. N. Usmonov, A. Kutlimratov, J. M. Abdiev, M. Kalanov, A. Razzakov, A. Akhmedov
Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.
{"title":"Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x\u0000 \u0000 \u0000 0\u0000 ≤\u0000 x\u0000 ≤\u0000 1\u0000 \u0000 \u0000 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)","authors":"A. Saidov, D. Saparov, Sh. N. Usmonov, A. Kutlimratov, J. M. Abdiev, M. Kalanov, A. Razzakov, A. Akhmedov","doi":"10.1155/2021/3472487","DOIUrl":"https://doi.org/10.1155/2021/3472487","url":null,"abstract":"Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"6 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80491853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermochromic M-phase vanadium dioxide VO2(M) films with different morphologies have been grown directly on smooth fused quartz substrates using low deposition rate pulsed laser deposition without posttreatment. When the substrate temperature was increased in the range 450°C–750°C, better (011) texturization of VO2(M) films was observed along with an enhancement of their crystallinity. Morphology evolved from small-grained and densely packed VO2(M) grains at 450°C to less packed micro/nanowires at 750°C. Mechanisms behind the crystallinity/morphology evolution were discussed and correlated with the effect of the temperature on the diffusion of the adatoms as well as on the V5+ valence states content in VO2(M) films. Resistivity measurements as a function of temperature revealed that the insulator-to-metal transition features of VO2(M) films (i.e., transition temperature (TIMT), resistivity variation (ΔR), hysteresis width (ΔH), and transition sharpness (ΔT)) are strongly dependent on the processing temperature. In terms of optical properties, it was found that the open (i.e., porous) structure of the films achieved at high temperature induced an improvement of their luminous transmittance. Simultaneously, the enhancement of the films crystallinity with the temperature resulted in better IR modulation ability. The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.
{"title":"Substrate Temperature-Dependent Structural, Optical, and Electrical Properties of Thermochromic VO2(M) Nanostructured Films Grown by a One-Step Pulsed Laser Deposition Process on Smooth Quartz Substrates","authors":"A. Hendaoui","doi":"10.1155/2021/7700676","DOIUrl":"https://doi.org/10.1155/2021/7700676","url":null,"abstract":"Thermochromic M-phase vanadium dioxide VO2(M) films with different morphologies have been grown directly on smooth fused quartz substrates using low deposition rate pulsed laser deposition without posttreatment. When the substrate temperature was increased in the range 450°C–750°C, better (011) texturization of VO2(M) films was observed along with an enhancement of their crystallinity. Morphology evolved from small-grained and densely packed VO2(M) grains at 450°C to less packed micro/nanowires at 750°C. Mechanisms behind the crystallinity/morphology evolution were discussed and correlated with the effect of the temperature on the diffusion of the adatoms as well as on the V5+ valence states content in VO2(M) films. Resistivity measurements as a function of temperature revealed that the insulator-to-metal transition features of VO2(M) films (i.e., transition temperature (TIMT), resistivity variation (ΔR), hysteresis width (ΔH), and transition sharpness (ΔT)) are strongly dependent on the processing temperature. In terms of optical properties, it was found that the open (i.e., porous) structure of the films achieved at high temperature induced an improvement of their luminous transmittance. Simultaneously, the enhancement of the films crystallinity with the temperature resulted in better IR modulation ability. The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"4 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85592515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented. The considered model consists of solving the three-dimensional effective-mass Schrödinger equation, thus providing a complete description of the neutral and charged complex excitons’ fine structure. The QD size effect on carrier confinement energies, wave functions, and s-p splitting is studied. The direct Coulomb interaction impact on the calculated s and p states’ transition energies is investigated. The behaviour of the binding energy of neutral and charged excitons (X− and X+) and biexciton XX versus QD height is studied. The addition of the correlation effect allows to explain the nature of biexcitons often observed experimentally.
{"title":"Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes","authors":"M. Omri, A. Sayari, L. Sfaxi","doi":"10.1155/2021/3928308","DOIUrl":"https://doi.org/10.1155/2021/3928308","url":null,"abstract":"In this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented. The considered model consists of solving the three-dimensional effective-mass Schrödinger equation, thus providing a complete description of the neutral and charged complex excitons’ fine structure. The QD size effect on carrier confinement energies, wave functions, and s-p splitting is studied. The direct Coulomb interaction impact on the calculated s and p states’ transition energies is investigated. The behaviour of the binding energy of neutral and charged excitons (X− and X+) and biexciton XX versus QD height is studied. The addition of the correlation effect allows to explain the nature of biexcitons often observed experimentally.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72540953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Lan, Chin-Tung Lee, Y. Lai, C. Chen, Hsi-Wen Yang
The influence of Bi2O3 and melting temperature on the thermal and structural properties of xBi2O3-(60-x) ZnO-40B2O3 glasses has been investigated in this study. It is expected that these factors can be used to control the degree of reduction of Bi2O3, and the relationship between these factors and the color change of the process for bismuth glass is discussed. Due to high-temperature melting, the bismuth-doped borate glasses have changed into dark/black from original transparent yellow and the light transmittance will decrease, so it is not used in optical applications. The thermal properties of glass are measured by a thermomechanical analyzer (TMA), and the glass structure is analyzed by FTIR and XPS. The results show that the glass is mainly composed of [BiO6] octahedron, [BiO3] triangle, [BO4] tetrahedron, and triangle [BO3] units, and the network of the glass system is mainly bonded by B-O-B, B-O-Zn, B-O-Bi, and Bi-O-Bi. The glass thermal expansion coefficient (CTE) of this glass system increases with the increase of Bi2O3 content, and the O1s nuclear electron binding energy shifts to the lower energy direction with the increase of Bi2O3 addition. In terms of FTIR, as the melting temperature rises, the B-O-B bonding vibration concentration of [BO4] inside the borate glass decreases, and the density of B-O-B bonding vibration of [BO3] increases, Moreover, the increase in melting temperature increases the probability of reducing Bi ions to Bi0, reduces the bonding of Bi-O-B, and increases the bonding of B-O-B, and the CTE also slightly decreases.
研究了Bi2O3和熔融温度对xBi2O3-(60-x) ZnO-40B2O3玻璃热性能和结构性能的影响。期望这些因素可以用来控制Bi2O3的还原程度，并讨论了这些因素与铋玻璃工艺颜色变化的关系。由于高温熔融，掺铋硼酸盐玻璃由原来的透明黄色变成暗/黑色，透光率降低，因此不能用于光学应用。用热分析仪(TMA)测量了玻璃的热性能，并用FTIR和XPS分析了玻璃的结构。结果表明:该玻璃主要由[BiO6]八面体、[BiO3]三角形、[BO4]四面体和[BO3]三角形单元组成，玻璃体系的网络主要由B-O-B、B-O-Zn、B-O-Bi和Bi-O-Bi键合。该玻璃体系的玻璃热膨胀系数(CTE)随Bi2O3添加量的增加而增大，O1s核电子结合能随Bi2O3添加量的增加而向低能方向移动。在FTIR方面，随着熔融温度的升高，硼酸盐玻璃内部[BO4]的B-O-B键振动浓度降低，[BO3]的B-O-B键振动密度增加，而且熔融温度的升高使Bi离子还原为Bi0的概率增加，使Bi- o - b键成键减少，使B-O-B键成键增加，CTE也略有降低。
{"title":"The Relationship between the Structure and Thermal Properties of Bi2O3-ZnO-B2O3 Glass System","authors":"S. Lan, Chin-Tung Lee, Y. Lai, C. Chen, Hsi-Wen Yang","doi":"10.1155/2021/2321558","DOIUrl":"https://doi.org/10.1155/2021/2321558","url":null,"abstract":"The influence of Bi2O3 and melting temperature on the thermal and structural properties of xBi2O3-(60-x) ZnO-40B2O3 glasses has been investigated in this study. It is expected that these factors can be used to control the degree of reduction of Bi2O3, and the relationship between these factors and the color change of the process for bismuth glass is discussed. Due to high-temperature melting, the bismuth-doped borate glasses have changed into dark/black from original transparent yellow and the light transmittance will decrease, so it is not used in optical applications. The thermal properties of glass are measured by a thermomechanical analyzer (TMA), and the glass structure is analyzed by FTIR and XPS. The results show that the glass is mainly composed of [BiO6] octahedron, [BiO3] triangle, [BO4] tetrahedron, and triangle [BO3] units, and the network of the glass system is mainly bonded by B-O-B, B-O-Zn, B-O-Bi, and Bi-O-Bi. The glass thermal expansion coefficient (CTE) of this glass system increases with the increase of Bi2O3 content, and the O1s nuclear electron binding energy shifts to the lower energy direction with the increase of Bi2O3 addition. In terms of FTIR, as the melting temperature rises, the B-O-B bonding vibration concentration of [BO4] inside the borate glass decreases, and the density of B-O-B bonding vibration of [BO3] increases, Moreover, the increase in melting temperature increases the probability of reducing Bi ions to Bi0, reduces the bonding of Bi-O-B, and increases the bonding of B-O-B, and the CTE also slightly decreases.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83276617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Among different sensing platforms, metamaterials composed of subwavelength or deep subwavelength sized metal resonance elements arrays that are etched on semiconductor substrates or dielectric substrates exhibit excellent characteristics due to the strong localization and enhancement of resonance electromagnetic fields. As a new type of detection method, metamaterial sensors can break through the resolution limit of traditional sensors for a small amount of substance and have the advantages of high sensitivity, fast response, and simple measurement. Significant enhancement of the sensing characteristics of metamaterial sensors was realized by optimizing microstructures (single split-ring, double split-ring, nested split-ring, asymmetric split-ring, three-dimensional split-ring, etc.), using ultrathin substrates or low-index substrate materials, etching away local substrate, and integrating microfluidic channel, etc. This paper mainly reviews the research advance on the improvement of sensing characteristics from optimizing resonance structures and changing substrate materials and morphology. Furthermore, the sensing mechanism and main characteristic parameters of metamaterial sensors are introduced in detail, and the development trend and challenge of metamaterial sensing applications are prospected. It is believed that metamaterial sensors will have potential broader application prospects in environmental monitoring, food safety control, and biosensing in the future.
{"title":"Research Advance on the Sensing Characteristics of Refractive Index Sensors Based on Electromagnetic Metamaterials","authors":"Zongli Wang, Xin Wang, Junlin Wang","doi":"10.1155/2021/2301222","DOIUrl":"https://doi.org/10.1155/2021/2301222","url":null,"abstract":"Among different sensing platforms, metamaterials composed of subwavelength or deep subwavelength sized metal resonance elements arrays that are etched on semiconductor substrates or dielectric substrates exhibit excellent characteristics due to the strong localization and enhancement of resonance electromagnetic fields. As a new type of detection method, metamaterial sensors can break through the resolution limit of traditional sensors for a small amount of substance and have the advantages of high sensitivity, fast response, and simple measurement. Significant enhancement of the sensing characteristics of metamaterial sensors was realized by optimizing microstructures (single split-ring, double split-ring, nested split-ring, asymmetric split-ring, three-dimensional split-ring, etc.), using ultrathin substrates or low-index substrate materials, etching away local substrate, and integrating microfluidic channel, etc. This paper mainly reviews the research advance on the improvement of sensing characteristics from optimizing resonance structures and changing substrate materials and morphology. Furthermore, the sensing mechanism and main characteristic parameters of metamaterial sensors are introduced in detail, and the development trend and challenge of metamaterial sensing applications are prospected. It is believed that metamaterial sensors will have potential broader application prospects in environmental monitoring, food safety control, and biosensing in the future.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"82 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77129317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.
{"title":"Electric Field Controlled Itinerant Carrier Spin Polarization in Ferromagnetic Semiconductors","authors":"Gezahegn Assefa","doi":"10.1155/2021/6663876","DOIUrl":"https://doi.org/10.1155/2021/6663876","url":null,"abstract":"Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs (\u0000 \u0000 GaAsMn\u0000 \u0000 ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"8 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85012745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：