Abstract
Despite the great leap forward perovskite solar cells (PSCs) have achieved in power conversion efficiency, the device instability remains one of the major problems plaguing its commercialization. Dopant-free hole transport material (HTM) has been widely studied as an important strategy to improve the stability of PSCs due to its avoidance of moisture-sensitive dopants and cumbersome doping process. In this work, a series of dopant-free HTMs L1F, L2F and L3F based on D-A-π-A-D configuration were synthesized through two steps of reaction. L3F presents a high glass transition temperature of 180 °C and thermal decomposition temperature of 448 °C. Notably, electron paramagnetic resonance signals of L1F, L2F and L3F powders indicate the open-shell quinoidal diradical resonance structure in their aggregation state due to aggregation-induced radical effect. All these HTMs present higher hole mobility than dopant-free Spiro-OMeTAD, and the dopant-free L3F-based PSC device achieves the highest power conversion efficiency of 17.6% among them. In addition, due to the high hydrophobic properties of L1F, L2F and L3F, the perovskite films spin-coated with these HTMs exhibit higher humidity stability than doped Spiro-OMeTAD. These results demonstrate a promising design strategy for high glass transition temperature dopant-free hole transport material. The open-shell quinoid-radical organic semiconductors are not rational candidates for dopant-free HTMs for PSC devices.