A comprehensive theoretical investigation into the dynamic transport properties of electrons in the indium arsenide (InAs) spherical layer quantum dots (SLQDs) is presented. The focus is on how these properties are influenced by structural geometry, temperature, and externally applied pressure. Utilizing a quantum mechanical framework based on the effective mass approximation, a systematic analysis is made of the variations in quantized energy levels, electron relaxation time, mobility, electrical conductivity, and drift velocity with respect to the inner and outer SLQD structure radii. The results demonstrate that increasing the inner radius (or reducing the outer radius) leads to stronger quantum confinement, which significantly enhances all investigated transport properties. Furthermore, elevated temperatures result in improved electron dynamics, while applied hydrostatic pressure has a detrimental effect by suppressing the energy level spacing and reducing the carrier mobility. These findings provide fundamental insights into how thermomechanical parameters and quantum dot geometry can be effectively tuned to optimize the electron transport in low-dimensional semiconductor systems for advanced optoelectronic and nanoscale device applications.
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