The article uses an analytical solution to the Schrödinger equation for an electron in each layer and the boundary conditions between layers to simulate the behavior of electrons in multilayer quantum nanostructures and also creates a Visual Basic program for the process under consideration. The program has the ability to change the effective mass of an electron in each layer, the height and width of the potential barrier in it, to calculate the coefficients of transmission and the return of electrons through barriers and the probability of being in them, and also to send the calculation results to MS Excel. Using the program, the dependence of the transmission and reflection coefficients of electrons on barriers and the probability of staying in them on the thickness and the width of the barriers and the electric field was studied.
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