With advances in device miniaturization, understanding and manipulating nanoscale hot electron dynamics in semiconductors is recognized as an essential factor for improving performance and energy efficiency in optoelectronics and logic devices in the post-Moore era. This work demonstrates an effective strategy to modulate hot electron dynamics through nonequilibrium phonon excitations, utilizing first-principles-based mode-resolved electron-phonon coupled Boltzmann transport equation calculations. Two different phonon-mediated pathways for perturbing hot electron relaxation dynamics in doped semiconductors are illustrated, i.e., high-frequency optical phonons (e.g., longitudinal optical phonons in GaN) and low-frequency acoustic phonons, both of which exhibit strong coupling with electrons. While exciting high-frequency optical phonons to significant nonequilibrium states can quickly reheat and elevate electron temperatures, their rapid energy decay to other phonons fails to continuously slow down the subsequent hot electron relaxation. In contrast, the weak coupling of low-frequency acoustic phonons with other phonons facilitates the excitation of long-lived phonon nonequilibrium, which effectively prolongs the hot electron relaxation process from a few to tens of picoseconds for GaN, AlN, and Si. These findings reveal a general mechanism to modulate hot electron dynamics in device semiconductors, offering promising approaches to enhance the energy efficiency of advanced nanoscale devices.
{"title":"Hot Electron Dynamics Modulated by Nonequilibrium Phonon Excitations","authors":"Jiaxuan Xu, Weikang Li, Hua Bao","doi":"10.1002/andp.202500126","DOIUrl":"https://doi.org/10.1002/andp.202500126","url":null,"abstract":"<p>With advances in device miniaturization, understanding and manipulating nanoscale hot electron dynamics in semiconductors is recognized as an essential factor for improving performance and energy efficiency in optoelectronics and logic devices in the post-Moore era. This work demonstrates an effective strategy to modulate hot electron dynamics through nonequilibrium phonon excitations, utilizing first-principles-based mode-resolved electron-phonon coupled Boltzmann transport equation calculations. Two different phonon-mediated pathways for perturbing hot electron relaxation dynamics in doped semiconductors are illustrated, i.e., high-frequency optical phonons (e.g., longitudinal optical phonons in GaN) and low-frequency acoustic phonons, both of which exhibit strong coupling with electrons. While exciting high-frequency optical phonons to significant nonequilibrium states can quickly reheat and elevate electron temperatures, their rapid energy decay to other phonons fails to continuously slow down the subsequent hot electron relaxation. In contrast, the weak coupling of low-frequency acoustic phonons with other phonons facilitates the excitation of long-lived phonon nonequilibrium, which effectively prolongs the hot electron relaxation process from a few to tens of picoseconds for GaN, AlN, and Si. These findings reveal a general mechanism to modulate hot electron dynamics in device semiconductors, offering promising approaches to enhance the energy efficiency of advanced nanoscale devices.</p>","PeriodicalId":7896,"journal":{"name":"Annalen der Physik","volume":"537 10","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145272718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Issue Information: Ann. Phys. 8/2025","authors":"","doi":"10.1002/andp.70026","DOIUrl":"https://doi.org/10.1002/andp.70026","url":null,"abstract":"","PeriodicalId":7896,"journal":{"name":"Annalen der Physik","volume":"537 8","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.70026","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144811215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nicolás Pérez, Sebastian Sailler, Heike Schlörb, Kornelius Nielsch
The effect of structural disorder on the electrical transport is systematically studied in Bi2Se3-Fe3O4 nanograin-bulk thermoelectric materials. Keeping the characteristics of the Bi2Se3 matrix under control allows to evidence the role of localization and surface interaction in electronic transport in bulk nanostructured thermoelectric composites. Nanograin Bi2Se3-Fe3O4 bulks present an enhanced thermoelectric performance compared to Bi2Se3 and enable the realization of linear magnetoconductance at low temperatures in composite bulks. With the addition of Fe3O4, a crossover from positive to negative magnetoconductance is realized, more enhanced in c-axis textured samples. The observations are compatible with the presence of high mobility carriers at the Bi2Se3-Fe3O4 interfaces of the material.
{"title":"Magnetoconductivity in Bismuth Selenide–Magnetite Thermoelectric Nanocomposites, Positive to Negative Crossover and Linear Behavior","authors":"Nicolás Pérez, Sebastian Sailler, Heike Schlörb, Kornelius Nielsch","doi":"10.1002/andp.202500182","DOIUrl":"https://doi.org/10.1002/andp.202500182","url":null,"abstract":"<p>The effect of structural disorder on the electrical transport is systematically studied in Bi<sub>2</sub>Se<sub>3</sub>-Fe<sub>3</sub>O<sub>4</sub> nanograin-bulk thermoelectric materials. Keeping the characteristics of the Bi<sub>2</sub>Se<sub>3</sub> matrix under control allows to evidence the role of localization and surface interaction in electronic transport in bulk nanostructured thermoelectric composites. Nanograin Bi<sub>2</sub>Se<sub>3</sub>-Fe<sub>3</sub>O<sub>4</sub> bulks present an enhanced thermoelectric performance compared to Bi<sub>2</sub>Se<sub>3</sub> and enable the realization of linear magnetoconductance at low temperatures in composite bulks. With the addition of Fe<sub>3</sub>O<sub>4</sub>, a crossover from positive to negative magnetoconductance is realized, more enhanced in <i>c</i>-axis textured samples. The observations are compatible with the presence of high mobility carriers at the Bi<sub>2</sub>Se<sub>3</sub>-Fe<sub>3</sub>O<sub>4</sub> interfaces of the material.</p>","PeriodicalId":7896,"journal":{"name":"Annalen der Physik","volume":"537 11","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.202500182","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145486890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Gödel universe is considered within the context of the local limit of nonlocal gravity. This theory differs from Einstein's general relativity (GR) through the existence of a scalar susceptibility function