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Advances in organic transistors for artificial perception applications 用于人工感知的有机晶体管研究进展
Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100028
Wei Wang , Zihan He , Chong-an Di , Daoben Zhu

The rise of intelligent matter and bioelectronics enables the booming development of perception-functionalized devices to serve as a cutting-edge area. Organic field-effect transistors (OFETs) are considered to be attractive candidates for artificial perception applications not only because of their intrinsic flexibility, biocompatibility and solution processability, but also owning to their unique features in efficient molecule design and diverse interface engineering. In this review, we summarized the recent advances and perspectives for organic transistors toward various artificial perception applications. We first introduce the fundamentals of perception-functionalized OFETs. Thereafter, the recent progress in sensors, synaptic transistors and adaptive devices are overviewed. Moreover, we summarized six strategies towards perception-functionalized OFETs, and finally proposed challenges and opportunities of organic transistors in this flourishing field.

智能物质和生物电子学的兴起使得感知功能化设备的蓬勃发展成为一个前沿领域。有机场效应晶体管(ofet)被认为是人工感知应用的有吸引力的候选者,不仅因为其固有的灵活性,生物相容性和溶液可加工性,而且由于其在高效分子设计和多样化界面工程方面的独特特点。本文综述了有机晶体管在各种人工感知应用中的最新进展和展望。我们首先介绍感知功能化ofet的基本原理。然后,综述了传感器、突触晶体管和自适应器件的最新进展。此外,我们总结了感知功能化ofet的六种策略,最后提出了有机晶体管在这个蓬勃发展的领域所面临的挑战和机遇。
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引用次数: 3
Facile hydrothermally synthesized nanosheets-based Cu0.06-xNi0.03Sn0.03+xS0.12 flower for optoelectronic and dielectric applications 基于Cu0.06-xNi0.03Sn0.03+xS0.12纳米片的光电子和介电应用
Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100030
D. Sahoo , S. Senapati , S. Samal , Sagar Bisoyi , R. Naik

The present investigation reports the preparation of Cu0.06-xNi0.03Sn0.03+xS0.12 (CNTS) nanosheets (NS) by hydrothermal method and its dielectric and optical behavior. The as-prepared CNTS samples with different Sn content exhibit polycrystalline nature with primary stannite phase along with several secondary phases. The CNTS samples show nanoflower-like morphology consisting of self-assembled NS of an average thickness of 40–50 nm. The morphology remains invariant, but a variation in the band edge absorption and corresponding bandgap variation is observed for the increase in Sn content. The photoluminescence emission with 532 nm excitation of CNTS nanosheets shows the peaks in orange-red regions. The visible emission is primarily due to the presence of different defect states in the NS. From the frequency and temperature-dependent dielectric study, AC conductivity and the impedance spectroscopy-related parameters were evaluated. In the low-frequency region, the CNTS behaves like an unpolarized material, whereas in the high-frequency region, it facilitates the hopping of charge carriers due to the increased frequency range. The electrical conduction is due to the cumulative result of the hopping of charge carriers across the barrier potential and tunneling of polarons formed due to lattice distortion at high temperatures. The behavior of the complex impedance parameters validates the negative temperature coefficient of resistance and the decrease in bulk resistance with the increase in temperature. The tunable semiconducting properties, along with the excellent optical and dielectric behavior of the CNTS materials, promote its application in various cutting-edge optoelectronic and dielectric devices.

本文报道了水热法制备Cu0.06-xNi0.03Sn0.03+xS0.12 (CNTS)纳米片及其介电和光学性能。制备的不同Sn含量的碳纳米管样品呈现出多晶的性质,其中含有原生锡石相和多个次生相。CNTS样品呈纳米花状,由自组装的NS组成,平均厚度为40-50 nm。形貌保持不变,但随着Sn含量的增加,带边吸收和相应的带隙发生了变化。在532 nm激发下,CNTS纳米片的光致发光峰位于橙红色区域。可见光发射主要是由于NS中存在不同的缺陷态。从频率和温度相关的介电研究中,评估了交流电导率和阻抗谱相关参数。在低频区,CNTS表现为非极化材料,而在高频区,由于增加了频率范围,有利于载流子的跳变。导电是由于载流子在势垒势上的跳跃和在高温下由于晶格畸变而形成的极化子隧穿的累积结果。复合阻抗参数的变化证实了电阻温度系数为负,体电阻随温度升高而减小。碳纳米管材料具有可调谐的半导体特性,以及优异的光学和介电性能,促进了其在各种尖端光电和介电器件中的应用。
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引用次数: 2
Recent advances of transition radiation: Fundamentals and applications 跃迁辐射的最新进展:基础与应用
Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100025
Ruoxi Chen , Zheng Gong , Jialin Chen , Xinyan Zhang , Xingjian Zhu , Hongsheng Chen , Xiao Lin

Transition radiation is a fundamental process of light emission and occurs whenever a charged particle moves across an inhomogeneous region. One feature of transition radiation is that it can create light emission at arbitrary frequency under any particle velocity. Therefore, transition radiation is of significant importance to both fundamental science and practical applications. In this paper, we provide a brief historical review of transition radiation and its recent development. Moreover, we pay special attention to four typical applications of transition radiation, namely the detection of high-energy particles, coherent radiation sources, beam diagnosis, and excitation of surface waves. Finally, we give an outlook for the research tendency of transition radiation, especially its flexible manipulation by exploiting artificially-engineered materials and nanostructures, such as gain materials, metamaterials, spatial-temporal materials, meta-boundaries, and layered structures with a periodic or non-periodic stacking.

跃迁辐射是光发射的一个基本过程,每当带电粒子穿过非均匀区域时就会发生跃迁辐射。跃迁辐射的一个特点是它可以在任何粒子速度下产生任意频率的光发射。因此,跃迁辐射在基础科学和实际应用中都具有重要意义。本文简要介绍了跃迁辐射的发展历史及其最新进展。此外,我们还特别关注了跃迁辐射的四个典型应用,即高能粒子探测、相干辐射源、光束诊断和表面波激发。最后,展望了跃迁辐射的研究趋势,特别是利用人工工程材料和纳米结构,如增益材料、超材料、时空材料、元边界以及具有周期性或非周期性堆叠的层状结构,对跃迁辐射进行柔性操纵。
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引用次数: 7
Enhancing the bandwidth of antennas using polymer composites with high dielectric relaxation 利用高介电弛豫聚合物复合材料增强天线带宽
Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100026
Ilkan Calisir , Xiantao Yang , Elliot L. Bennett , Jianliang Xiao , Yi Huang

We propose a concept using a frequency-dependent property (dielectric relaxation) of dielectric materials to enhance the bandwidth of the antenna widely used in wireless communications. The bandwidth enhancement can be achieved when a loading dielectric material with a relative permittivity that is inversely proportional to the frequency by the power of n. The bandwidth for a selected antenna example could be increased by 135% when the power n = 2. A solid material, composed of plasticized PVDF containing nano-sized silica particles, exhibiting dielectric relaxation of n = 0.52, is developed in order to prove the theoretical concept and used to test the performance of an example mobile phone antenna. The influence of hydrogen bonding on tuning the frequency-dependent power n in the developed composite material is verified. The bandwidth of the antenna was increased by 18% over the operating frequency band using a newly developed dielectrically relaxing material, n = 0.52 compared to the conventional non-relaxing material, n = 0.

我们提出了一种利用介电材料的频率相关特性(介电弛豫)来提高无线通信中广泛使用的天线带宽的概念。当加载相对介电常数与频率成反比的介质材料时,可以实现带宽增强。对于选定的天线示例,当功率n = 2时,带宽可以增加135%。为了证明这一理论概念,我们开发了一种固体材料,由含有纳米级二氧化硅颗粒的增塑PVDF组成,其介电弛豫系数为n = 0.52,并用于测试手机天线的性能。验证了氢键对复合材料中频率相关功率n调谐的影响。与传统的非弛豫材料(n = 0)相比,新开发的介质弛豫材料(n = 0.52)使天线的带宽在工作频带上提高了18%。
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引用次数: 1
Diffusion limiting layer induced tantalum oxide based memristor as nociceptor 扩散限制层诱导氧化钽基忆阻器作为伤害感受器
Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100031
Debashis Panda , Yu-Fong Hui , Tseung-Yuen Tseng

The nociceptor is critical to developed the new generation human-like robots. It is a special sensory receptor that detects noxious stimuli and responds accordingly. This report demonstrates a novel TaN/Ta/TaOx/Al2O3/ITO/glass memristor as a nociceptor. The device shows bipolar switching with a positive set and a negative reset. High-resolution transmission microscopy observation confirms the presence of the ultrathin Al2O3 layer and the clear interface between oxides and electrodes. The experimental results measured through electric pulses confirm the key features of nociceptors such as threshold, relaxation, allodynia and hyperalgesia properties. The memristor is relaxed after 10 ms at 0.1 V. These nociceptive properties confirm that the TaOx-based memristors can be potentially used as electronic nociceptors.

伤害感受器是开发新一代类人机器人的关键。它是一种特殊的感觉受体,能检测有害刺激并做出相应反应。本报告展示了一种新型的TaN/Ta/TaOx/Al2O3/ITO/玻璃忆阻器作为伤害感受器。该设备显示双极开关,具有正设置和负重置。高分辨率透射显微镜观察证实了超薄Al2O3层的存在以及氧化物和电极之间的清晰界面。通过电脉冲测量的实验结果证实了伤害感受器的关键特征,如阈值、松弛、异常性疼痛和痛觉过敏特性。忆阻器在0.1V下10ms后松弛。这些伤害性性质证实了基于TaOx的忆阻器可以潜在地用作电子伤害感受器。
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引用次数: 1
Functional nanostructures for bias-magnet-free and reconfigurable microwave magnetic devices 用于无偏置磁体和可重构微波磁性器件的功能性纳米结构
Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100008
Arabinda Haldar

Recent demonstrations of the reconfigurable microwave properties based on patterned magnetic nanostructures without any external bias magnetic field have been reviewed. Two main design strategies for the nanostructures have been discussed. Firstly, self-biased nanomagnetic networks and multilayer structures that possess two different remanent magnetic states are exploited. Different remanent states are associated with distinct microwave properties and they are within a nanosecond time scale by using a simple field initialization scheme. The dipolar coupling field and the demagnetization field variations have been attributed to the origin of the tunable microwave responses. Secondly, magnetic skyrmions have been explored for tunable microwave properties. In this regard, skyrmion size which is directly related to its resonant modes has been controlled by placing it at different positions in an engineered nanostructure with varying edge repulsions. Finally, an outlook on the future directions and scopes of bias-free microwave devices have been discussed. It is also outlined that such devices have potential implications for the logic and magnonic technologies beyond their applications for microwave magnetic devices.

综述了最近在没有任何外部偏置磁场的情况下,基于图案化磁性纳米结构的可重构微波性能的演示。讨论了纳米结构的两种主要设计策略。首先,利用具有两种不同剩余磁态的自偏置纳米磁网络和多层结构。不同的剩余态与不同的微波特性相关,并且通过使用简单的场初始化方案,它们在纳秒时间尺度内。偶极耦合场和消磁场的变化被认为是可调谐微波响应的起源。其次,磁性skyrmions已经被探索用于可调谐微波特性。在这方面,通过将skyrmion放置在具有不同边缘排斥的工程纳米结构中的不同位置,已经控制了与其共振模式直接相关的skyrmion尺寸。最后,对无偏压微波器件的发展方向和范围进行了展望。还概述了这种器件除了应用于微波磁器件之外,对逻辑和磁振技术还有潜在的意义。
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引用次数: 2
Broadband Photodetection of Cd3As2: Review and Perspectives Cd3As2的宽带光探测:回顾与展望
Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100007
Yunkun Yang , Faxian Xiu

Due to the topologically protected gapless electronic structure, Cadmium arsenide (Cd3As2) is predicted to possess large and high-speed photoresponses in a broad spectrum. The progressively developed device process and material technologies offer the possibility to integrate semimetals with semiconductors or 2D materials into heterojunctions, which can suppress the intrinsically high dark current. Hence, photodetectors based on Cd3As2 and its heterostructures has been gradually evolved in recent years, showing an excellent broadband photodetection capability. In this Perspective, we elaborate on several key parameters for evaluating the performance of a photodetection. We overview recent studies on photodetection and imaging based on Cd3As2 nanostructures or thin films, and further discuss the opportunities and challenges for Cd3As2 photodetectors.

由于拓扑保护的无隙电子结构,砷化镉(Cd3As2)被预测在宽光谱中具有大而高速的光响应。逐渐发展的器件工艺和材料技术提供了将半金属与半导体或2D材料集成到异质结中的可能性,这可以抑制固有的高暗电流。因此,近年来,基于Cd3As2及其异质结构的光电探测器逐渐发展起来,显示出优异的宽带光电探测能力。从这个角度来看,我们详细阐述了评估光电探测性能的几个关键参数。我们概述了最近基于Cd3As2纳米结构或薄膜的光电探测和成像研究,并进一步讨论了Cd3As2光电探测器的机遇和挑战。
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引用次数: 3
Skin-Integrated, Stretchable Triboelectric Nanogenerator for Energy Harvesting and Mechanical Sensing 用于能量收集和机械传感的皮肤集成、可拉伸摩擦电纳米发电机
Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100012
Ling Zhao, Zihong Lin, K. Lai
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引用次数: 3
On functional boron nitride: Electronic structures and thermal properties 功能氮化硼的电子结构与热性能
Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100005
Jing Cao, Tzee Luai Meng, Xikui Zhang, Chee Kiang Ivan Tan, Ady Suwardi, Hongfei Liu

The past two decades have witnessed extensive explorations of boron nitride (BN) largely due to its unique optoelectronic properties, mechanical robustness, high thermal conductivity, thermal and chemical stability. Crystal growth and functional engineering of BN thin film structures as well as their integrations with two-dimensional materials for advanced applications have been attracting increasing interest in recent years. Here, we have reviewed the basic structural, electronic, and thermal transport properties of BN, especially hexagonal BN both in bulk and reduced dimensionalities. This is followed by a thorough account of progress in atomic layer deposition (ALD) of BN, which has the advantages of being able to grow on 3D surface and control the film thickness in atomic level. Future perspectives are provided through discussing the potential applications of BN along with the material synthesis.

在过去的二十年里,氮化硼(BN)因其独特的光电性能、机械坚固性、高导热性、热稳定性和化学稳定性而得到了广泛的探索。近年来,氮化硼薄膜结构的晶体生长和功能工程及其与二维材料的集成在高级应用中越来越引起人们的兴趣。在这里,我们回顾了BN的基本结构、电子和热输运性质,特别是六方体和降维BN。随后,全面介绍了BN的原子层沉积(ALD)的进展,其优点是能够在3D表面上生长并在原子水平上控制膜厚度。通过讨论氮化硼在材料合成中的潜在应用,提供了未来的前景。
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引用次数: 6
Flexible short-wavelength infrared photodetector based on extrinsic Sb2Se3 基于Sb2Se3的柔性短波红外光电探测器
Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100011
Kanghua Li , Xuke Yang , Feifan Yang , Jungang He , Guangzu Zhang , Shenglin Jiang , Chao Chen , Jiang Tang

One-dimensional antimony selenide (Sb2Se3), enjoying intriguing optoelectronic properties, has drawn extensive attention in solar cells and broadband photodetection. Limited by the bandgap, the reported Sb2Se3 photodetectors always focus on the detection of visible and near-infrared (<1050 nm). Extending the detection waveband can greatly enrich the applications of Sb2Se3 photodetectors. Extrinsic photoconduction is an attractive strategy for extending the detection waveband, for example, the extrinsic Si detector for short-wavelength or long-wavelength infrared detection. However, Sb2Se3 extrinsic photoconduction has not been reported yet. Herein, the extrinsic photoconduction, attributed to the intrinsic point defects, is observed in Sb2Se3 for the first time, which induced a broadened short-wavelength infrared detection of 1650 nm at room temperature. Furthermore, the Sb2Se3 photodetector is fabricated on a flexible polyimide substrate. Meanwhile, the Sb2Se3 photodetectors also demonstrate a fast response speed (rise of 9 µs and fall of 11 µs), a high linear dynamic range of 98 dB, and wide -3dB bandwidth of 163 kHz at 1300 nm. This extrinsic-photoconduction provides feasible design strategies to broaden the detection waveband of the Sb2Se3 photodetectors and can be extended to other chalcogenides.

一维硒化锑(Sb2Se3)具有有趣的光电特性,在太阳能电池和宽带光电探测中引起了广泛的关注。受带隙的限制,已报道的Sb2Se3光电探测器始终专注于可见光和近红外(<;1050nm)的探测。扩展探测波段可以极大地丰富Sb2Se3光电探测器的应用。外部光电导是用于扩展检测波段的有吸引力的策略,例如,用于短波长或长波长红外检测的外部Si检测器。然而,Sb2Se3的非本征光电导尚未被报道。本文首次在Sb2Se3中观察到归因于本征点缺陷的非本征光电导,这在室温下引起了1650nm的加宽短波长红外检测。此外,Sb2Se3光电探测器是在柔性聚酰亚胺衬底上制造的。同时,Sb2Se3光电探测器还表现出快速响应速度(上升9µs,下降11µs)、98 dB的高线性动态范围和1300 nm处163 kHz的宽-3dB带宽。这种非本征光电导为拓宽Sb2Se3光电探测器的探测波段提供了可行的设计策略,并且可以扩展到其他硫族化物。
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引用次数: 9
期刊
Materials Today Electronics
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