Pub Date : 2025-03-24DOI: 10.1016/j.mtelec.2025.100148
Zeqi Zang, Zixu Sa, Pengsheng Li, Guangcan Wang, Mingxu Wang, Yanxue Yin, Feng Chen, Zai-xing Yang
Diameter is an important geometry parameter for III-V nanowires (NWs) in electronics, optoelectronics and neuromorphic computing. In this work, the electrical stability and synaptic behaviors of thin and thick GaSb NWs are studied in detailed. With the higher surface-to-volume ratio and much more Sb-O bonds on the surface, the thin NWs possess heavier surface states than thick NWs. As a result, the thin NW filed-effect-transistors (NWFETs) display worse electrical stability and more obvious synaptic behaviors. These impressive phenomena result from the surface states related carrier trapping and detrapping processes. By taking use of the thin and thick NWFETs together for neuromorphic image, the recognition accuracy can reach to 93.9 %, which is much higher than that of individual thin (92.1 %) or thick (84.4 %) NWFETs. This work offers new insight into the modulation of surface states for the coming neuromorphic computing by using the global NWFETs.
{"title":"Diameter dependent synaptic behaviors of III-V nanowires for neuromorphic image denoising","authors":"Zeqi Zang, Zixu Sa, Pengsheng Li, Guangcan Wang, Mingxu Wang, Yanxue Yin, Feng Chen, Zai-xing Yang","doi":"10.1016/j.mtelec.2025.100148","DOIUrl":"10.1016/j.mtelec.2025.100148","url":null,"abstract":"<div><div>Diameter is an important geometry parameter for III-V nanowires (NWs) in electronics, optoelectronics and neuromorphic computing. In this work, the electrical stability and synaptic behaviors of thin and thick GaSb NWs are studied in detailed. With the higher surface-to-volume ratio and much more Sb-O bonds on the surface, the thin NWs possess heavier surface states than thick NWs. As a result, the thin NW filed-effect-transistors (NWFETs) display worse electrical stability and more obvious synaptic behaviors. These impressive phenomena result from the surface states related carrier trapping and detrapping processes. By taking use of the thin and thick NWFETs together for neuromorphic image, the recognition accuracy can reach to 93.9 %, which is much higher than that of individual thin (92.1 %) or thick (84.4 %) NWFETs. This work offers new insight into the modulation of surface states for the coming neuromorphic computing by using the global NWFETs.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100148"},"PeriodicalIF":0.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143734927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study presents an approach for fabricating flexible and stable electroplated circuits directly onto fabric and thread. We achieve this through a simple method. Pencil-drawn patterns on cotton fabric are followed by copper electroplating in a copper sulfate solution. This method eliminates the need for complex pre-treatment and lithography techniques, thus enabling rapid and on-site circuit development. This research investigated the influence of different pencil grades, drawing frequency, and plating time on the overall conductivity and flexibility of the fabric-based circuits. The electroplated copper demonstrated exceptional bending and thermal stability, maintaining consistent conductivity over a wide bending range (-180° to 180°), with minimal linear resistance change after extreme twisting. Furthermore, the fabricated circuits functioned effectively as Light Dependent Resistor (LDR) based Plated Circuit Boards (PCB), demonstrating robustness and practical potential. The fabrication of conductive threads has also been explored by electroplating graphite threads. These threads displayed remarkable flexibility, maintaining consistent conductivity (0.5 Ω/cm) even under tight knots. The copper-plated textile exhibited stable resistance: 0.6 Ω across 22 °C to 55 °C and 0.5 Ω/cm under bending angles from -180° to +180°. It endured 1000 folding cycles, with resistance increasing slightly to 1.3 Ω. Furthermore, this work shows that the flexible PCBs are resistant to folding stress, environmentally friendly, and disposable, which is a significant step toward sustainable electronics. The results of this study hold significant potential applications in textile-based electrical systems, wearable electronics, and sensors.
{"title":"Rapid fabrication of flexible copper-plated circuit boards on cotton fabrics and conductive threads for textile materials using pencil-drawn technique","authors":"Vinit Srivastava , Shivam Dubey , Rahul Vaish , Bharat Singh Rajpurohit","doi":"10.1016/j.mtelec.2025.100141","DOIUrl":"10.1016/j.mtelec.2025.100141","url":null,"abstract":"<div><div>This study presents an approach for fabricating flexible and stable electroplated circuits directly onto fabric and thread. We achieve this through a simple method. Pencil-drawn patterns on cotton fabric are followed by copper electroplating in a copper sulfate solution. This method eliminates the need for complex pre-treatment and lithography techniques, thus enabling rapid and on-site circuit development. This research investigated the influence of different pencil grades, drawing frequency, and plating time on the overall conductivity and flexibility of the fabric-based circuits. The electroplated copper demonstrated exceptional bending and thermal stability, maintaining consistent conductivity over a wide bending range (-180° to 180°), with minimal linear resistance change after extreme twisting. Furthermore, the fabricated circuits functioned effectively as Light Dependent Resistor (LDR) based Plated Circuit Boards (PCB), demonstrating robustness and practical potential. The fabrication of conductive threads has also been explored by electroplating graphite threads. These threads displayed remarkable flexibility, maintaining consistent conductivity (0.5 Ω/cm) even under tight knots. The copper-plated textile exhibited stable resistance: 0.6 Ω across 22 °C to 55 °C and 0.5 Ω/cm under bending angles from -180° to +180°. It endured 1000 folding cycles, with resistance increasing slightly to 1.3 Ω. Furthermore, this work shows that the flexible PCBs are resistant to folding stress, environmentally friendly, and disposable, which is a significant step toward sustainable electronics. The results of this study hold significant potential applications in textile-based electrical systems, wearable electronics, and sensors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100141"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-12DOI: 10.1016/j.mtelec.2025.100144
Md. Zahid Hasan , Rezaur Raihan , Nur Kutubul Alam , Md. Rejvi Kaysir , Md. Shaharuf Islam , M. A. Parvez Mahmud
The investigation of DNA hybridization spans various scientific domains, offering insights from genomics to diagnostics and pharmacology. Traditional methods involve labeling DNA, but innovative FET devices use label-free techniques. Nanoscale biosensors provide superior speed, sensitivity, cost-effectiveness, and versatility compared to conventional methods. Overcoming challenges like the Short Channel Effect (SCE) is crucial for synthesizing biosensors meeting these criteria. Previous research focused on junctionless double-gate transistors for mitigating SCE and GaN as channel materials for high-speed, low-power applications. However, dealing with negatively charged biomolecules like DNA poses challenges due to conflicting dielectric constant and interface charge effects. To address these challenges, the proposed nanoscale biosensor employs a junctionless dielectric modulated double-gate GaN field-effect transistor (JL-DM-DG GaNFET). This device effectively synergizes conflicting dielectric constant and charge effects, with GaN as the channel material. Simulation results show the n-type JL-DM-DG GaNFET exhibits significant sensitivity to negatively charged DNA, with a greater change in threshold voltage (> 539 mV for k = 1 to k = 15) compared to the p-type (-101 mV for k = 1 to k = 4, and 74.59 mV for k = 4 to k = 15). Specifically, for charge density the n-type device displays a higher sensitivity 1.05 vs. 0.509 for the p-type and for dielectric constant k = 16 (sensitivity 0.8 for n-type vs. 0.4 for p-type). Additionally, the device shows low subthreshold slope (∼ 60 mV/decay) and higher Ion/Ioff ratio, suggesting faster switching and lower power consumption. In summary, the proposed n-type JL-DM-DG GaNFET holds considerable potential for efficient and reliable DNA detection.
DNA杂交的研究跨越了各个科学领域，提供了从基因组学到诊断学和药理学的见解。传统的方法包括标记DNA，但创新的FET器件使用无标记技术。与传统方法相比，纳米级生物传感器具有更高的速度、灵敏度、成本效益和通用性。克服短通道效应（SCE）等挑战对于合成符合这些标准的生物传感器至关重要。以前的研究主要集中在无结双栅晶体管上，以减轻SCE和GaN作为高速，低功耗应用的通道材料。然而，由于介电常数和界面电荷效应的冲突，处理带负电荷的生物分子（如DNA）面临挑战。为了解决这些挑战，提出的纳米级生物传感器采用无结介质调制双栅GaN场效应晶体管（JL-DM-DG GaNFET）。该器件以氮化镓作为通道材料，有效地协同了相互冲突的介电常数和电荷效应。仿真结果表明，n型JL-DM-DG GaNFET对带负电荷的DNA具有显著的敏感性，阈值电压(>；k = 1至k = 15时为539 mV)，而p型（k = 1至k = 4时为-101 mV， k = 4至k = 15时为74.59 mV）。具体来说，对于电荷密度，n型器件显示出更高的灵敏度（1.05 vs. 0.509），对于p型和介电常数k = 16 （n型灵敏度0.8 vs. p型灵敏度0.4）。此外，该器件显示出低亚阈值斜率（~ 60 mV/衰减）和更高的离子/ off比，表明更快的开关和更低的功耗。综上所述，所提出的n型JL-DM-DG GaNFET在高效可靠的DNA检测方面具有相当大的潜力。
{"title":"Design and analysis of junctionless dielectric modulated double-gate GaNFET biosensor for label-free DNA detection","authors":"Md. Zahid Hasan , Rezaur Raihan , Nur Kutubul Alam , Md. Rejvi Kaysir , Md. Shaharuf Islam , M. A. Parvez Mahmud","doi":"10.1016/j.mtelec.2025.100144","DOIUrl":"10.1016/j.mtelec.2025.100144","url":null,"abstract":"<div><div>The investigation of DNA hybridization spans various scientific domains, offering insights from genomics to diagnostics and pharmacology. Traditional methods involve labeling DNA, but innovative FET devices use label-free techniques. Nanoscale biosensors provide superior speed, sensitivity, cost-effectiveness, and versatility compared to conventional methods. Overcoming challenges like the Short Channel Effect (SCE) is crucial for synthesizing biosensors meeting these criteria. Previous research focused on junctionless double-gate transistors for mitigating SCE and GaN as channel materials for high-speed, low-power applications. However, dealing with negatively charged biomolecules like DNA poses challenges due to conflicting dielectric constant and interface charge effects. To address these challenges, the proposed nanoscale biosensor employs a junctionless dielectric modulated double-gate GaN field-effect transistor (JL-DM-DG GaNFET). This device effectively synergizes conflicting dielectric constant and charge effects, with GaN as the channel material. Simulation results show the n-type JL-DM-DG GaNFET exhibits significant sensitivity to negatively charged DNA, with a greater change in threshold voltage (> 539 mV for <em>k</em> = 1 to <em>k</em> = 15) compared to the p-type (-101 mV for <em>k</em> = 1 to <em>k</em> = 4, and 74.59 mV for <em>k</em> = 4 to <em>k</em> = 15). Specifically, for charge density the n-type device displays a higher sensitivity 1.05 vs. 0.509 for the p-type and for dielectric constant <em>k</em> = 16 (sensitivity 0.8 for n-type vs. 0.4 for p-type). Additionally, the device shows low subthreshold slope (∼ 60 mV/decay) and higher I<sub>on</sub>/I<sub>off</sub> ratio, suggesting faster switching and lower power consumption. In summary, the proposed n-type JL-DM-DG GaNFET holds considerable potential for efficient and reliable DNA detection.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100144"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-10DOI: 10.1016/j.mtelec.2025.100142
Xiangming Wu , Zhengping Zhang , Zhenfei Li , Jin Zhang , Xiong Wang , Weiren Zhu
Electromagnetic waves carrying orbital angular momentum (OAM) hold promising applications in enhanced communications by exploiting their multiple and orthogonal modes. While programmable metasurfaces offer the capability to generate OAM waves with varying modes, they come with complexities in design and elevated costs due to the heavy reliance on active devices. In this paper, we present an innovative approach for dynamic OAM generation utilizing a pair of mechanically reconfigurable metasurfaces. The phase distributions of the two metasurfaces are carefully crafted to exhibit reconfigurable characteristics upon superimposition by adjusting their relative displacement. Specifically, the designed metasurfaces feature full phase modulation and high transmittance above -3 dB within 21–24 GHz. With these metasurfaces, OAM waves with six distinct modes (topological charge ) have been dynamically achieved, with each mode being generated under a specific displacement. The proposed design is rigorously validated through numerical simulations and experimental measurements.
{"title":"Dynamic multimode OAM generation implemented by mechanically reconfigurable metasurfaces","authors":"Xiangming Wu , Zhengping Zhang , Zhenfei Li , Jin Zhang , Xiong Wang , Weiren Zhu","doi":"10.1016/j.mtelec.2025.100142","DOIUrl":"10.1016/j.mtelec.2025.100142","url":null,"abstract":"<div><div>Electromagnetic waves carrying orbital angular momentum (OAM) hold promising applications in enhanced communications by exploiting their multiple and orthogonal modes. While programmable metasurfaces offer the capability to generate OAM waves with varying modes, they come with complexities in design and elevated costs due to the heavy reliance on active devices. In this paper, we present an innovative approach for dynamic OAM generation utilizing a pair of mechanically reconfigurable metasurfaces. The phase distributions of the two metasurfaces are carefully crafted to exhibit reconfigurable characteristics upon superimposition by adjusting their relative displacement. Specifically, the designed metasurfaces feature full phase modulation and high transmittance above -3 dB within 21–24 GHz. With these metasurfaces, OAM waves with six distinct modes (topological charge <span><math><mrow><mi>l</mi><mo>=</mo><mo>±</mo><mn>1</mn><mo>,</mo><mo>±</mo><mn>2</mn><mo>,</mo><mo>±</mo><mn>3</mn></mrow></math></span>) have been dynamically achieved, with each mode being generated under a specific displacement. The proposed design is rigorously validated through numerical simulations and experimental measurements.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100142"},"PeriodicalIF":0.0,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In recent years, there have been continuous and remarkable efforts from both academic and industry to improve the efficiency and stability of perovskite solar cells (PSCs). Among all the efforts, Ionic liquids (IL), a class of compounds with asymmetric organic cations and various anions, stand out as one of the most promising additives and interface modification layer for realizing high performance PSCs due to their unique physicochemical properties. Nonetheless, due to the variety of ionic liquids, searching an effective and optimum IL passivation materials for PSCs requires a huge amount of time and efforts in conventional trial-and-error experiments. In this context, machine learning (ML) offers powerful capabilities to handle complex, nonlinear problems, potentially accelerating the discovery and optimization of IL for PSCs applications. This review provides a comprehensive overview of the current applications of IL in PSCs, and summarizes the opportunities and key challenges in combining ML methods for IL research in PSCs. With the proposed ML frameworks, it is expected that a more predictive ML piloted research process would accelerate the discovery and optimization of IL in PSCs.
{"title":"Accelerating ionic liquid research in perovskite solar cells through machine learning:Opportunities and challenges","authors":"Jiazheng Wang, Qiang Lou, Zhengjie Xu, Yufeng Jin, Guibo Luo, Hang Zhou","doi":"10.1016/j.mtelec.2025.100143","DOIUrl":"10.1016/j.mtelec.2025.100143","url":null,"abstract":"<div><div>In recent years, there have been continuous and remarkable efforts from both academic and industry to improve the efficiency and stability of perovskite solar cells (PSCs). Among all the efforts, Ionic liquids (IL), a class of compounds with asymmetric organic cations and various anions, stand out as one of the most promising additives and interface modification layer for realizing high performance PSCs due to their unique physicochemical properties. Nonetheless, due to the variety of ionic liquids, searching an effective and optimum IL passivation materials for PSCs requires a huge amount of time and efforts in conventional trial-and-error experiments. In this context, machine learning (ML) offers powerful capabilities to handle complex, nonlinear problems, potentially accelerating the discovery and optimization of IL for PSCs applications. This review provides a comprehensive overview of the current applications of IL in PSCs, and summarizes the opportunities and key challenges in combining ML methods for IL research in PSCs. With the proposed ML frameworks, it is expected that a more predictive ML piloted research process would accelerate the discovery and optimization of IL in PSCs.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100143"},"PeriodicalIF":0.0,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-21DOI: 10.1016/j.mtelec.2025.100140
Meisam Esfandiari, Xiaojing Lv, Shaghayegh Chamani, Yang Yang
This review comprehensively examines the recent advancements in graphene-based metasurface lenses, shedding light on their innovative design principles, advanced manufacturing techniques, and superior optical properties. Graphene's exceptional electrical, mechanical, and optical characteristics, combined with the versatile functionality of metamaterials and metasurfaces, have led to the development of highly efficient and dynamic lens systems. These lenses demonstrate remarkable capabilities, including tunable focal lengths, enhanced light modulation, and improved photodetection sensitivity. Such properties render them highly suitable for transformative applications in diverse fields like high-resolution imaging, precision sensing, and next-generation telecommunications. The review provides an in-depth analysis of the state-of-the-art methods used in the fabrication of these lenses, such as chemical vapor deposition, advanced lithography, and nanomanufacturing, to achieve nanoscale precision and functional integration. Moreover, the challenges associated with large-scale production scalability, fabrication techniques' complexity, and graphene's long-term stability under varying environmental conditions are critically examined. In exploring these aspects, the review identifies key directions for future research, emphasizing the need for interdisciplinary collaboration to overcome current limitations. By addressing these challenges and leveraging advancements in material science and nanotechnology, graphene-based metasurface lenses have the potential to revolutionize the future of optical lens systems and photonic technologies.
{"title":"Graphene metasurfaces: Advances in lens applications, design strategies, and fabrication techniques","authors":"Meisam Esfandiari, Xiaojing Lv, Shaghayegh Chamani, Yang Yang","doi":"10.1016/j.mtelec.2025.100140","DOIUrl":"10.1016/j.mtelec.2025.100140","url":null,"abstract":"<div><div>This review comprehensively examines the recent advancements in graphene-based metasurface lenses, shedding light on their innovative design principles, advanced manufacturing techniques, and superior optical properties. Graphene's exceptional electrical, mechanical, and optical characteristics, combined with the versatile functionality of metamaterials and metasurfaces, have led to the development of highly efficient and dynamic lens systems. These lenses demonstrate remarkable capabilities, including tunable focal lengths, enhanced light modulation, and improved photodetection sensitivity. Such properties render them highly suitable for transformative applications in diverse fields like high-resolution imaging, precision sensing, and next-generation telecommunications. The review provides an in-depth analysis of the state-of-the-art methods used in the fabrication of these lenses, such as chemical vapor deposition, advanced lithography, and nanomanufacturing, to achieve nanoscale precision and functional integration. Moreover, the challenges associated with large-scale production scalability, fabrication techniques' complexity, and graphene's long-term stability under varying environmental conditions are critically examined. In exploring these aspects, the review identifies key directions for future research, emphasizing the need for interdisciplinary collaboration to overcome current limitations. By addressing these challenges and leveraging advancements in material science and nanotechnology, graphene-based metasurface lenses have the potential to revolutionize the future of optical lens systems and photonic technologies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100140"},"PeriodicalIF":0.0,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143478548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-03DOI: 10.1016/j.mtelec.2025.100139
Sidhant Sharma , Hilal Nagib , Phuong Y. Le , Martin W. Allen , Anthony S. Holland , Jim G. Partridge , Hiep N. Tran
Gallium oxide thin films have been deposited on a-, c-, r- plane sapphire and amorphous Si3N4 at 800 °C by RF sputtering from a 99.99 % purity Ga2O3 target then characterised structurally, optically and electrically. A fixed process pressure of 3.0 mTorr was employed with O2:Ar ratios of 0:1 (0 % O2), 1:18 (5 % O2), 1:9 (10 % O2) and 3:17 (15 % O2). X-ray diffractograms attributable to β-Ga2O3 were collected from the films grown on a- and c- plane sapphire. The highest crystallinity was observed in the films grown on c-plane sapphire. Ga2O3 films on r-plane sapphire and Si3N4 produced no diffracted peaks and were deemed to be amorphous or nanocrystalline. Ga 3d X-ray photoelectron spectra showed only Ga-O bonding with no evidence of Ga-Ga bonding, even in the films deposited with only Ar introduced to the chamber. Direct optical bandgaps exceeding 5.0 eV were observed in the films on a- and c- plane sapphire. Valence band spectra showed the valence band maxima (VBM) and Fermi level (FL) were separated by ∼3 eV in the Ga2O3 films on a- and c- plane sapphire whilst films on r-plane sapphire exhibited VBM - FL gaps of ∼2.5 eV, indicative of low shallow impurity/defect doping density, most likely due to oxygen vacancies. Selected films were incorporated into metal-semiconductor-metal UV-C detectors. Solar-blind detection was confirmed and the maximum measured UV-C /dark current ratios (IUVC:Idark) exceeded 103:1.
{"title":"Structural, surface, electrical and UVC sensing properties of high temperature RF sputtered gallium oxide thin films","authors":"Sidhant Sharma , Hilal Nagib , Phuong Y. Le , Martin W. Allen , Anthony S. Holland , Jim G. Partridge , Hiep N. Tran","doi":"10.1016/j.mtelec.2025.100139","DOIUrl":"10.1016/j.mtelec.2025.100139","url":null,"abstract":"<div><div>Gallium oxide thin films have been deposited on a-, c-, r- plane sapphire and amorphous Si<sub>3</sub>N<sub>4</sub> at 800 °C by RF sputtering from a 99.99 % purity Ga<sub>2</sub>O<sub>3</sub> target then characterised structurally, optically and electrically. A fixed process pressure of 3.0 mTorr was employed with O<sub>2</sub>:Ar ratios of 0:1 (0 % O<sub>2</sub>), 1:18 (5 % O<sub>2</sub>), 1:9 (10 % O<sub>2</sub>) and 3:17 (15 % O<sub>2</sub>). X-ray diffractograms attributable to β-Ga<sub>2</sub>O<sub>3</sub> were collected from the films grown on a- and c- plane sapphire. The highest crystallinity was observed in the films grown on c-plane sapphire. Ga<sub>2</sub>O<sub>3</sub> films on r-plane sapphire and Si<sub>3</sub>N<sub>4</sub> produced no diffracted peaks and were deemed to be amorphous or nanocrystalline. Ga 3d X-ray photoelectron spectra showed only Ga-O bonding with no evidence of Ga-Ga bonding, even in the films deposited with only Ar introduced to the chamber. Direct optical bandgaps exceeding 5.0 eV were observed in the films on a- and c- plane sapphire. Valence band spectra showed the valence band maxima (VBM) and Fermi level (FL) were separated by ∼3 eV in the Ga<sub>2</sub>O<sub>3</sub> films on a- and c- plane sapphire whilst films on r-plane sapphire exhibited VBM - FL gaps of ∼2.5 eV, indicative of low shallow impurity/defect doping density, most likely due to oxygen vacancies. Selected films were incorporated into metal-semiconductor-metal UV-C detectors. Solar-blind detection was confirmed and the maximum measured UV-C /dark current ratios (I<sub>UVC</sub>:I<sub>dark</sub>) exceeded 10<sup>3</sup>:1.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100139"},"PeriodicalIF":0.0,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-30DOI: 10.1016/j.mtelec.2025.100137
Sheikh Montasir Mahbub, Abdullah Al Mahmud Nafiz, Rakibul Hasan Sagor
This manuscript investigates the propagation of ultra-short pulses through hollow-core photonic crystal fibers (HC-PCF) and explores their application as high-sensitivity refractive index sensors. The unique guiding properties of HC-PCFs, combined with the ability to confine light within the hollow core, enable enhanced light-matter interactions. When exposed to intense light, these interactions can demonstrate nonlinear optical phenomena, such as pulse compression, which has been utilized here as a tool for detecting changes in refractive index. The HC-PCF has been designed to allow testing materials with refractive indices ranging from 1.4 to 1.45 to be placed in the core, where ultra-short pulses centered at 1550 nm with a duration of 1 picosecond and an input power of 1 KW, are sent from one end to leverage the nonlinear optical properties. By leveraging these nonlinear phenomena, it has been demonstrated that HC-PCFs exhibit unique attributes when the testing materials inside the core have varying refractive indices. Employing this novel technique, unique compression sensitivity and significant power upsurges have been achieved for the materials under test (MUT) with different refractive indices. Unlike the refractive index sensing methods in practice, this novel technique works based on lesser detection parameters and offers improved sensitivity and selectivity. The proposed method has achieved a minimum sensitivity of 11.6 %, which means the pulse is compressed by a factor of nine, and the maximum power surge recorded is 2313.918 W. This innovative approach opens new avenues for developing advanced sensing systems using HC-PCFs in fields such as environmental monitoring, bio-sensing, and chemical detection.
{"title":"Advanced refractive index sensing through ultra-short pulse compression in hollow core photonic crystal fiber","authors":"Sheikh Montasir Mahbub, Abdullah Al Mahmud Nafiz, Rakibul Hasan Sagor","doi":"10.1016/j.mtelec.2025.100137","DOIUrl":"10.1016/j.mtelec.2025.100137","url":null,"abstract":"<div><div>This manuscript investigates the propagation of ultra-short pulses through hollow-core photonic crystal fibers (HC-PCF) and explores their application as high-sensitivity refractive index sensors. The unique guiding properties of HC-PCFs, combined with the ability to confine light within the hollow core, enable enhanced light-matter interactions. When exposed to intense light, these interactions can demonstrate nonlinear optical phenomena, such as pulse compression, which has been utilized here as a tool for detecting changes in refractive index. The HC-PCF has been designed to allow testing materials with refractive indices ranging from 1.4 to 1.45 to be placed in the core, where ultra-short pulses centered at 1550 nm with a duration of 1 picosecond and an input power of 1 KW, are sent from one end to leverage the nonlinear optical properties. By leveraging these nonlinear phenomena, it has been demonstrated that HC-PCFs exhibit unique attributes when the testing materials inside the core have varying refractive indices. Employing this novel technique, unique compression sensitivity and significant power upsurges have been achieved for the materials under test (MUT) with different refractive indices. Unlike the refractive index sensing methods in practice, this novel technique works based on lesser detection parameters and offers improved sensitivity and selectivity. The proposed method has achieved a minimum sensitivity of 11.6 %, which means the pulse is compressed by a factor of nine, and the maximum power surge recorded is 2313.918 W. This innovative approach opens new avenues for developing advanced sensing systems using HC-PCFs in fields such as environmental monitoring, bio-sensing, and chemical detection.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100137"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-27DOI: 10.1016/j.mtelec.2025.100138
Ao Liu , Jun Xi , Hanlin Cen , Jinfei Dai , Yi Yang , Cheng Liu , Shuai Guo , Xiaofang Li , Xiaotian Guo , Feng Yang , Meng Li , Haoxuan Liu , Fei Zhang , Huagui Lai , Fan Fu , Shuaifeng Hu , Junke Wang , Seongrok Seo , Henry J. Snaith , Jinghui Li , Yong-Young Noh
Metal-halide perovskites are emerging as promising semiconductors for next-generation (opto)electronics. Due to their excellent optoelectronic and physical properties, as well as their processing capabilities, the past decades have seen significant progress and success in various device applications, such as solar cells, photodetectors, light-emitting diodes, and transistors. Despite their performance now rivaling or surpassing that of silicon counterparts, halide-perovskite semiconductors still face challenges for commercialization, particularly in terms of toxicity, stability, reliability, reproducibility, and lifetime. In this Roadmap, we present comprehensive discussions and perspectives from leading experts in the perovskite research community, covering various perovskite (opto)electronics, fundamental material properties and fabrication methods, photophysical characterizations, computing science, device physics, and the current challenges in each field. We hope this article provides a valuable resource for researchers and fosters the development of halide perovskites from basic to applied science.
{"title":"Roadmap on metal-halide perovskite semiconductors and devices","authors":"Ao Liu , Jun Xi , Hanlin Cen , Jinfei Dai , Yi Yang , Cheng Liu , Shuai Guo , Xiaofang Li , Xiaotian Guo , Feng Yang , Meng Li , Haoxuan Liu , Fei Zhang , Huagui Lai , Fan Fu , Shuaifeng Hu , Junke Wang , Seongrok Seo , Henry J. Snaith , Jinghui Li , Yong-Young Noh","doi":"10.1016/j.mtelec.2025.100138","DOIUrl":"10.1016/j.mtelec.2025.100138","url":null,"abstract":"<div><div>Metal-halide perovskites are emerging as promising semiconductors for next-generation (opto)electronics. Due to their excellent optoelectronic and physical properties, as well as their processing capabilities, the past decades have seen significant progress and success in various device applications, such as solar cells, photodetectors, light-emitting diodes, and transistors. Despite their performance now rivaling or surpassing that of silicon counterparts, halide-perovskite semiconductors still face challenges for commercialization, particularly in terms of toxicity, stability, reliability, reproducibility, and lifetime. In this Roadmap, we present comprehensive discussions and perspectives from leading experts in the perovskite research community, covering various perovskite (opto)electronics, fundamental material properties and fabrication methods, photophysical characterizations, computing science, device physics, and the current challenges in each field. We hope this article provides a valuable resource for researchers and fosters the development of halide perovskites from basic to applied science.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100138"},"PeriodicalIF":0.0,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143211787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-23DOI: 10.1016/j.mtelec.2025.100136
Peng Gao , Muhammad Adnan
This paper shows the short- and long-term electronics technologies emerging as the enablers of next-generation AI systems and focuses on rapidly developing technologies with promise toward enabling the new AI revolution, such as neuromorphic, quantum computing and edge AI processors. These technologies are key to improving the computational power, energy efficiency, and scalability required in AI solutions across healthcare, autonomous systems, and better endeavours. Neuromorphic computing works similarly to the brain's neural configuration to build a more energy-efficient AI system by simulating biological functionality, while quantum computing is ubiquitous as the next stage of problem-solving systems in AI and exponentially increases computational speed and functionality. Finally, Edge AI processors play an important role in real-time AI decision-making, especially in environments with limited power and space, as they allow data to be processed at the original point of generation. Of course, although these technologies demonstrate great potential, there are still obstacles to overcome for subtle hardware-software integration, architecture scalability and high energy consumption. This study highlights sustainable hardware design as an essential solution to these challenges, discussing low-power chips, AI accelerators and energy-efficient designs that allow devices to run at scale without performance liabilities. The paper also highlights quantum and neuromorphic computing—which mimics the structure and function of biological brains—as an important focus for overcoming limitations regarding scalability, allowing for novel architectures equipped to deal with the extremely large amounts of data required for future, more advanced AI models. We also discuss how these progressions can facilitate the creation of effective and scalable AI systems that support AI in addressing global challenges like environmental deterioration and resource limitations. Lastly, the paper highlights the importance of ongoing research and innovation in such areas to promote the evolution of AI systems that are resilient, scalable and energy-efficient in a way that ensures the long-term sustainability of AI and its implementation in various domains.
{"title":"Overview of emerging electronics technologies for artificial intelligence: A review","authors":"Peng Gao , Muhammad Adnan","doi":"10.1016/j.mtelec.2025.100136","DOIUrl":"10.1016/j.mtelec.2025.100136","url":null,"abstract":"<div><div>This paper shows the short- and long-term electronics technologies emerging as the enablers of next-generation AI systems and focuses on rapidly developing technologies with promise toward enabling the new AI revolution, such as neuromorphic, quantum computing and edge AI processors. These technologies are key to improving the computational power, energy efficiency, and scalability required in AI solutions across healthcare, autonomous systems, and better endeavours. Neuromorphic computing works similarly to the brain's neural configuration to build a more energy-efficient AI system by simulating biological functionality, while quantum computing is ubiquitous as the next stage of problem-solving systems in AI and exponentially increases computational speed and functionality. Finally, Edge AI processors play an important role in real-time AI decision-making, especially in environments with limited power and space, as they allow data to be processed at the original point of generation. Of course, although these technologies demonstrate great potential, there are still obstacles to overcome for subtle hardware-software integration, architecture scalability and high energy consumption. This study highlights sustainable hardware design as an essential solution to these challenges, discussing low-power chips, AI accelerators and energy-efficient designs that allow devices to run at scale without performance liabilities. The paper also highlights quantum and neuromorphic computing—which mimics the structure and function of biological brains—as an important focus for overcoming limitations regarding scalability, allowing for novel architectures equipped to deal with the extremely large amounts of data required for future, more advanced AI models. We also discuss how these progressions can facilitate the creation of effective and scalable AI systems that support AI in addressing global challenges like environmental deterioration and resource limitations. Lastly, the paper highlights the importance of ongoing research and innovation in such areas to promote the evolution of AI systems that are resilient, scalable and energy-efficient in a way that ensures the long-term sustainability of AI and its implementation in various domains.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100136"},"PeriodicalIF":0.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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