Pub Date : 2025-06-13DOI: 10.1016/j.mtelec.2025.100162
Muhammad Kamran Shereen , Xiaoguang Liu , Xiaohu Wu , Salah Ud Din , Ayesha Naseem , Shehryar Niazi , Muhammad Irfan Khattak
Metamaterials and metasurfaces have revolutionized antenna design by enabling unprecedented control over electromagnetic waves. This paper explores integrating deep learning (DL) techniques in designing and optimizing metamaterial and metasurface antennas, focusing on improvements in gain, bandwidth, and size reduction. The review considers modern methodologies, such as hybrid optimization techniques with DL combined with traditional methods such as genetic algorithms and evolutionary strategies. It also addresses the use of high-fidelity datasets generated from advanced simulations to train DL models for more efficient antenna design. The paper is structured into five main sections: an introduction to metamaterials and metasurfaces, a discussion on their electromagnetic behavior, a classification of different types, an overview of deep learning applications in antenna design, and a conclusion summarizing the current advances, challenges, and future directions. By emphasizing the potential of DL to streamline the design process and enhance antenna performance, this paper provides a valuable foundation for future research in electromagnetic metasurfaces.
{"title":"Innovations in metamaterial and metasurface antenna design: The role of deep learning","authors":"Muhammad Kamran Shereen , Xiaoguang Liu , Xiaohu Wu , Salah Ud Din , Ayesha Naseem , Shehryar Niazi , Muhammad Irfan Khattak","doi":"10.1016/j.mtelec.2025.100162","DOIUrl":"10.1016/j.mtelec.2025.100162","url":null,"abstract":"<div><div>Metamaterials and metasurfaces have revolutionized antenna design by enabling unprecedented control over electromagnetic waves. This paper explores integrating deep learning (DL) techniques in designing and optimizing metamaterial and metasurface antennas, focusing on improvements in gain, bandwidth, and size reduction. The review considers modern methodologies, such as hybrid optimization techniques with DL combined with traditional methods such as genetic algorithms and evolutionary strategies. It also addresses the use of high-fidelity datasets generated from advanced simulations to train DL models for more efficient antenna design. The paper is structured into five main sections: an introduction to metamaterials and metasurfaces, a discussion on their electromagnetic behavior, a classification of different types, an overview of deep learning applications in antenna design, and a conclusion summarizing the current advances, challenges, and future directions. By emphasizing the potential of DL to streamline the design process and enhance antenna performance, this paper provides a valuable foundation for future research in electromagnetic metasurfaces.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"13 ","pages":"Article 100162"},"PeriodicalIF":0.0,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144307986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-13DOI: 10.1016/j.mtelec.2025.100164
Yujiao Li , Shanshan Jiang , Bo He , Bingyan Wang , Jiawei Yang , Huanhuan Wei , Can Fu , Gang He
Inspired by biological neuromorphic systems, biomimetic artificial synaptic devices based on organic transistors have become a prominent research direction. The polymer PDVT-10, which is commonly used as channel layer in devices, has excellent stability and high mobility. However, previous research in simulating photonic synapses has focused on doping and hybrid structures, which is limited by the choice of materials and complex fabrication processes in exploring the multifunctional applications of photonic synaptic devices in the future. Here, we successfully constructed individual PDVT-10 photoelectric synaptic devices to simulate biological synaptic plasticity under different wavelengths of light pulse stimulation for the first time. Furthermore, the application of light-induced high-pass filtering characteristics, pain sensing, sensitization, as well as memory functions were realized. In addition, the application of logic circuits was realized based on the photoelectric synergistic effect. Moreover, the introduction of a polyvinyl alcohol light-absorbing layer endowed the device with light potentiation and electrical depression function. Subsequently, a simple convolutional neural network was successfully constructed and implemented for the MNIST number recognition task. This work not only contributes to an in-depth understanding of the response mechanism of the device to different wavelengths of light, but also enriches the application areas of the device and provides important support for the practical applications of neuromorphic computing in the future.
{"title":"High-performance organic synaptic transistors for multi-wavelength perception simulation and neuromorphic computing","authors":"Yujiao Li , Shanshan Jiang , Bo He , Bingyan Wang , Jiawei Yang , Huanhuan Wei , Can Fu , Gang He","doi":"10.1016/j.mtelec.2025.100164","DOIUrl":"10.1016/j.mtelec.2025.100164","url":null,"abstract":"<div><div>Inspired by biological neuromorphic systems, biomimetic artificial synaptic devices based on organic transistors have become a prominent research direction. The polymer PDVT-10, which is commonly used as channel layer in devices, has excellent stability and high mobility. However, previous research in simulating photonic synapses has focused on doping and hybrid structures, which is limited by the choice of materials and complex fabrication processes in exploring the multifunctional applications of photonic synaptic devices in the future. Here, we successfully constructed individual PDVT-10 photoelectric synaptic devices to simulate biological synaptic plasticity under different wavelengths of light pulse stimulation for the first time. Furthermore, the application of light-induced high-pass filtering characteristics, pain sensing, sensitization, as well as memory functions were realized. In addition, the application of logic circuits was realized based on the photoelectric synergistic effect. Moreover, the introduction of a polyvinyl alcohol light-absorbing layer endowed the device with light potentiation and electrical depression function. Subsequently, a simple convolutional neural network was successfully constructed and implemented for the MNIST number recognition task. This work not only contributes to an in-depth understanding of the response mechanism of the device to different wavelengths of light, but also enriches the application areas of the device and provides important support for the practical applications of neuromorphic computing in the future.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"13 ","pages":"Article 100164"},"PeriodicalIF":0.0,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144313018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gallium oxynitride nanowires (GaON NWs) based ultraviolet photodetectors (UV PDs) with tunable bandgap and superior response speed is demonstrated by nitridation process in a chemical vapour deposition system. Growth rate and density of the NWs are greatly influenced by the synthesis time. With increase in growth time from 60 to 100 min, nitrogen composition in the samples increased and oxygen composition decreased, resulting in bandgap tunability from 4.63 to 4.21 eV. As an effect of bandgap tunability and dimensionality shrinkage, valence band maximum gets lifted–up due to the hybridization of O2p and N2p states. The fabricated GaON PDs with an appropriate nitrogen composition demonstrate significant reduction in the dark current and a faster response time of 106 µs. Oxygen vacancies get suppressed by the alteration in valence band maximum, resulting in reduced photoconductive trapping effect and enhanced response speed. When nitrogen is introduced, the probability of photoexcited charge carrier recombination increase, resulting in poor photoresponsivity. Thus, varying the nitrogen composition, bandgap tunability is achieved which suppresses charge carriers trapping in GaON. This methodology provides an alternate approach to develop high-speed ultraviolet photodetectors.
{"title":"Development of high-speed gallium oxynitride nanowires based ultraviolet photodetectors by chemical vapour deposition technique: a facile approach","authors":"Sanjay Sankaranarayanan , Prabakaran Kandasamy , Niraj Kumar , Kandasamy Muthusamy , Rameshkumar Perumal , Saravanan Gengan","doi":"10.1016/j.mtelec.2025.100150","DOIUrl":"10.1016/j.mtelec.2025.100150","url":null,"abstract":"<div><div>Gallium oxynitride nanowires (GaON NWs) based ultraviolet photodetectors (UV PDs) with tunable bandgap and superior response speed is demonstrated by nitridation process in a chemical vapour deposition system. Growth rate and density of the NWs are greatly influenced by the synthesis time. With increase in growth time from 60 to 100 min, nitrogen composition in the samples increased and oxygen composition decreased, resulting in bandgap tunability from 4.63 to 4.21 eV. As an effect of bandgap tunability and dimensionality shrinkage, valence band maximum gets lifted–up due to the hybridization of O<sub>2p</sub> and N<sub>2p</sub> states. The fabricated GaON PDs with an appropriate nitrogen composition demonstrate significant reduction in the dark current and a faster response time of 106 µs. Oxygen vacancies get suppressed by the alteration in valence band maximum, resulting in reduced photoconductive trapping effect and enhanced response speed. When nitrogen is introduced, the probability of photoexcited charge carrier recombination increase, resulting in poor photoresponsivity. Thus, varying the nitrogen composition, bandgap tunability is achieved which suppresses charge carriers trapping in GaON. This methodology provides an alternate approach to develop high-speed ultraviolet photodetectors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100150"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144262542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-13DOI: 10.1016/j.mtelec.2025.100157
Kaixin Yu , Chen Wang , Yongzheng Wen , Yong Tan , Shiqiang Zhao , Renfei Zhang , Jingbo Sun , Ji Zhou
Nonlinear responses in the terahertz (THz) frequency range are essential for advancing THz sources and modulators. However, the development of THz nonlinear materials with efficient second- and third-order nonlinear susceptibilities at room temperature remains challenging. Here, we introduce a THz nonlinear metasurface based on gallium nitride two-dimensional electron gas (2DEG), capable of both second harmonic generation (SHG) and third harmonic generation (THG). By leveraging the magneto-electric coupling mechanism built in the metasurface, we induce anharmonic oscillations of electrons to achieve THz SHG with the effective second-order nonlinear susceptibility reaching 14.3 μm V-1. Meanwhile, the localized electric field confinements in the same metasurface structure substantially improve the intrinsic third-order nonlinearity of the 2DEG as well, enhancing the THz THG by over two orders of magnitude. By simply scaling the structure of the metasurface, the working frequency of the intense nonlinear responses can be engineered at will. Our results provide a promising route to efficient THz second- and third-order nonlinearities within a single metasurface, which may open new pathways for developing highly integrated, room-temperature THz sources, as well as further advancements in high-speed electronics.
{"title":"Large terahertz nonlinearity in two-dimensional electron gas metasurface","authors":"Kaixin Yu , Chen Wang , Yongzheng Wen , Yong Tan , Shiqiang Zhao , Renfei Zhang , Jingbo Sun , Ji Zhou","doi":"10.1016/j.mtelec.2025.100157","DOIUrl":"10.1016/j.mtelec.2025.100157","url":null,"abstract":"<div><div>Nonlinear responses in the terahertz (THz) frequency range are essential for advancing THz sources and modulators. However, the development of THz nonlinear materials with efficient second- and third-order nonlinear susceptibilities at room temperature remains challenging. Here, we introduce a THz nonlinear metasurface based on gallium nitride two-dimensional electron gas (2DEG), capable of both second harmonic generation (SHG) and third harmonic generation (THG). By leveraging the magneto-electric coupling mechanism built in the metasurface, we induce anharmonic oscillations of electrons to achieve THz SHG with the effective second-order nonlinear susceptibility reaching 14.3 μm V<sup>-1</sup>. Meanwhile, the localized electric field confinements in the same metasurface structure substantially improve the intrinsic third-order nonlinearity of the 2DEG as well, enhancing the THz THG by over two orders of magnitude. By simply scaling the structure of the metasurface, the working frequency of the intense nonlinear responses can be engineered at will. Our results provide a promising route to efficient THz second- and third-order nonlinearities within a single metasurface, which may open new pathways for developing highly integrated, room-temperature THz sources, as well as further advancements in high-speed electronics.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100157"},"PeriodicalIF":0.0,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144089271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-07DOI: 10.1016/j.mtelec.2025.100156
Shuchen Li , Shucheng Guo , Thomas Hoke, Xi Chen
Thermal transport in magnetic materials has become a pivotal research area due to its fundamental importance and potential applications in thermal management, spintronics, and energy conversion technologies. Beyond conventional heat carriers such as phonons and electrons, magnetic excitations—including magnons and spinons—play a substantial role in heat transport within these materials. Their transport behaviors are influenced by factors such as dimensionality, defects, magnetic structures, and external stimuli like magnetic and electric fields. Additionally, the coupling of magnetic excitations with phonons or electrons is critical in modulating the thermal properties of magnetic materials. This review provides a comprehensive overview of thermal transport mechanisms in magnetic materials, with a focus on magnetic excitations. Recent advancements reveal intriguing behaviors, including ballistic magnetic thermal transport, size-dependent thermal transport, and the impact of various scattering processes on thermal conductivity. Furthermore, external magnetic and electric fields have been shown to manipulate thermal conductivity by modifying magnetic dispersion, spin configurations, and scattering processes. These findings open a new pathway for controlling heat flow in magnetic systems. This review highlights the important role of thermal transport studies in advancing our understanding of magnetic materials and offers valuable insights into the development of functional thermal devices utilizing these materials.
{"title":"Thermal transport in magnetic materials: A review","authors":"Shuchen Li , Shucheng Guo , Thomas Hoke, Xi Chen","doi":"10.1016/j.mtelec.2025.100156","DOIUrl":"10.1016/j.mtelec.2025.100156","url":null,"abstract":"<div><div>Thermal transport in magnetic materials has become a pivotal research area due to its fundamental importance and potential applications in thermal management, spintronics, and energy conversion technologies. Beyond conventional heat carriers such as phonons and electrons, magnetic excitations—including magnons and spinons—play a substantial role in heat transport within these materials. Their transport behaviors are influenced by factors such as dimensionality, defects, magnetic structures, and external stimuli like magnetic and electric fields. Additionally, the coupling of magnetic excitations with phonons or electrons is critical in modulating the thermal properties of magnetic materials. This review provides a comprehensive overview of thermal transport mechanisms in magnetic materials, with a focus on magnetic excitations. Recent advancements reveal intriguing behaviors, including ballistic magnetic thermal transport, size-dependent thermal transport, and the impact of various scattering processes on thermal conductivity. Furthermore, external magnetic and electric fields have been shown to manipulate thermal conductivity by modifying magnetic dispersion, spin configurations, and scattering processes. These findings open a new pathway for controlling heat flow in magnetic systems. This review highlights the important role of thermal transport studies in advancing our understanding of magnetic materials and offers valuable insights into the development of functional thermal devices utilizing these materials.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100156"},"PeriodicalIF":0.0,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143947715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With rapid industrialization and increasing energy demand, thermoelectric materials emerge as key players in transforming waste heat into clean, renewable energy, offering a sustainable solution to the global energy crisis. Despite several serious attempts in the last few decades, the full potential of thermoelectric technology has not yet been exploited because of menial thermoelectric performances from conventional materials. This study uses a combination of quantum and semi-classical computational approaches to investigate the electronic and thermoelectric behavior of Germanium-based (Ge2AB (A/B=S, Se, Te)) Janus monolayers. Due to the broken inversion symmetry (compared to the trivial transition metal dichalcogenides), the investigated monolayers comprise unique E-k dispersion and phonon transport characteristics. These characteristics significantly enhance the thermoelectric performance by promoting multi-valleys and staggered band effects in the E-k dispersion and coupling acoustic and optical phonons in the phonon spectra. Phonon dispersion analyses show non-imaginary frequencies, confirming the investigated monolayers’ structural and dynamic stability. The study focuses on critical thermoelectric parameters such as the Seebeck coefficient, electrical/thermal conductivity, thermo-power, and thermoelectric figure of merit for the proposed set of Janus monolayers. It reveals that these Janus monolayers exhibit ultra-low lattice thermal conductivity (due to the combined effect of softening of phonon modes and large-scattering due to heavier atoms) and high power factors (due to the large number of charge carriers available for the transport in the multi-valleys present near the Fermi level). The calculated results estimate the highest thermoelectric figure of merit (up to 3.52) and significantly low-lattice thermal conductivity 0.03 W m−1 K−1 for Janus monolayer Ge2SeTe. The significant findings demonstrate the potential of Ge2AB (A/B=S, Se, Te) monolayers in highly efficient energy harvesting technologies. They emphasize their potential in next-generation thermoelectric devices, which significantly affect energy conversion technologies.
随着工业化的快速发展和能源需求的不断增长，热电材料成为将废热转化为清洁可再生能源的关键因素，为解决全球能源危机提供了可持续的解决方案。尽管在过去的几十年里进行了几次认真的尝试，但由于传统材料的热电性能低下，热电技术的全部潜力尚未得到开发。本研究使用量子和半经典计算方法的结合来研究锗基（Ge2AB (a /B=S, Se, Te)） Janus单层的电子和热电行为。由于反转对称性的破坏（与平凡的过渡金属二硫族化合物相比），所研究的单层具有独特的E-k色散和声子输运特性。这些特性通过促进E-k色散中的多谷和交错带效应以及声子光谱中的声子与光学声子的耦合，显著提高了热电性能。声子色散分析显示非虚频率，证实了所研究的单层膜的结构和动态稳定性。研究的重点是关键的热电参数，如塞贝克系数，电导率/导热系数，热功率，热电优值为提出的Janus单层。结果表明，这些Janus单层具有超低晶格热导率（由于声子模式软化和较重原子引起的大散射的综合效应）和高功率因数（由于在费米能级附近存在的多谷中可用于输运的大量载流子）。计算结果估计了Janus单层Ge2SeTe的最高热电值（高达3.52）和极低的晶格热导率0.03 W m−1 K−1。这一重大发现证明了Ge2AB （A/B=S, Se, Te）单层膜在高效能量收集技术中的潜力。他们强调了其在下一代热电器件中的潜力，这将对能量转换技术产生重大影响。
{"title":"Harnessing thermoelectric efficiency in Germanium-Based Janus monolayers: A theoretical perspective","authors":"Shivani Saini , Anup Shrivastava , Sanjai Singh , Jost Adam","doi":"10.1016/j.mtelec.2025.100154","DOIUrl":"10.1016/j.mtelec.2025.100154","url":null,"abstract":"<div><div>With rapid industrialization and increasing energy demand, thermoelectric materials emerge as key players in transforming waste heat into clean, renewable energy, offering a sustainable solution to the global energy crisis. Despite several serious attempts in the last few decades, the full potential of thermoelectric technology has not yet been exploited because of menial thermoelectric performances from conventional materials. This study uses a combination of quantum and semi-classical computational approaches to investigate the electronic and thermoelectric behavior of Germanium-based (Ge<sub>2</sub>AB (A/B=S, Se, Te)) Janus monolayers. Due to the broken inversion symmetry (compared to the trivial transition metal dichalcogenides), the investigated monolayers comprise unique E-k dispersion and phonon transport characteristics. These characteristics significantly enhance the thermoelectric performance by promoting multi-valleys and staggered band effects in the E-k dispersion and coupling acoustic and optical phonons in the phonon spectra. Phonon dispersion analyses show non-imaginary frequencies, confirming the investigated monolayers’ structural and dynamic stability. The study focuses on critical thermoelectric parameters such as the Seebeck coefficient, electrical/thermal conductivity, thermo-power, and thermoelectric figure of merit for the proposed set of Janus monolayers. It reveals that these Janus monolayers exhibit ultra-low lattice thermal conductivity (due to the combined effect of softening of phonon modes and large-scattering due to heavier atoms) and high power factors (due to the large number of charge carriers available for the transport in the multi-valleys present near the Fermi level). The calculated results estimate the highest thermoelectric figure of merit (up to 3.52) and significantly low-lattice thermal conductivity 0.03<!--> <!-->W<!--> <!-->m<sup>−1</sup> <!-->K<sup>−1</sup> for Janus monolayer Ge<sub>2</sub>SeTe. The significant findings demonstrate the potential of Ge<sub>2</sub>AB (A/B=S, Se, Te) monolayers in highly efficient energy harvesting technologies. They emphasize their potential in next-generation thermoelectric devices, which significantly affect energy conversion technologies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100154"},"PeriodicalIF":0.0,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-12DOI: 10.1016/j.mtelec.2025.100153
Min Nie , Chunyun Jiang , Yiting Yang , Bang Zhou , Zhiyong Chen , Guangping Jia , Zhicheng Li , Chunlei Dai , Jiayi He , Hai Guo
Soft magnetic multicomponent alloys (MCAs) are emerging materials, including amorphous, nanocrystalline, and high-entropy alloys, exhibit not only excellent soft magnetic properties but also high service performances such as high temperature stability, high corrosion resistance and high mechanical properties. They are promising candidates for the key materials of the components for power devices with high power density and high energy conversion efficiency at high frequency. However, despite the attractive properties of bulk soft magnetic MCAs, the soft magnetic composites (SMCs) based on the MCAs have not exhibited significant advantage in comparison to those based on the traditional alloys, which limits their wide applications. With urgent requirement in developing high-performance power inductors, understanding the fundamental behavior and underlying physics of soft magnetic MCAs is very important. In this review, the current status of soft magnetic MCAs and the SMCs based on MCAs is summarized. Novel preparation processes different from the conventional ones are discussed. The relationship among the preparation, properties and microstructure of the MCAs are also emphasized. The current status and existing challenges for the fabrication of SMCs based on soft magnetic MCAs are critically discussed. The potential solutions such as novel powdering techniques, forming methods, magnetic-thermal coupling processes and insulation coating approaches are proposed for future development.
{"title":"Multicomponent soft magnetic alloys for soft magnetic composites: A review","authors":"Min Nie , Chunyun Jiang , Yiting Yang , Bang Zhou , Zhiyong Chen , Guangping Jia , Zhicheng Li , Chunlei Dai , Jiayi He , Hai Guo","doi":"10.1016/j.mtelec.2025.100153","DOIUrl":"10.1016/j.mtelec.2025.100153","url":null,"abstract":"<div><div>Soft magnetic multicomponent alloys (MCAs) are emerging materials, including amorphous, nanocrystalline, and high-entropy alloys, exhibit not only excellent soft magnetic properties but also high service performances such as high temperature stability, high corrosion resistance and high mechanical properties. They are promising candidates for the key materials of the components for power devices with high power density and high energy conversion efficiency at high frequency. However, despite the attractive properties of bulk soft magnetic MCAs, the soft magnetic composites (SMCs) based on the MCAs have not exhibited significant advantage in comparison to those based on the traditional alloys, which limits their wide applications. With urgent requirement in developing high-performance power inductors, understanding the fundamental behavior and underlying physics of soft magnetic MCAs is very important. In this review, the current status of soft magnetic MCAs and the SMCs based on MCAs is summarized. Novel preparation processes different from the conventional ones are discussed. The relationship among the preparation, properties and microstructure of the MCAs are also emphasized. The current status and existing challenges for the fabrication of SMCs based on soft magnetic MCAs are critically discussed. The potential solutions such as novel powdering techniques, forming methods, magnetic-thermal coupling processes and insulation coating approaches are proposed for future development.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100153"},"PeriodicalIF":0.0,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143830081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-11DOI: 10.1016/j.mtelec.2025.100152
Siyao Chen , Hongqiu Wei , Cheng Lin , Hanxing Zhao , Chaoqun Dong , Xue Wan
Stimuli-responsive materials, which undergo variations in their physical or chemical properties in response to external stimuli, have recently drawn increasing attention for their integration into next-generation intelligent electronics. Their capabilities to adjust shapes and properties, combined with advanced manufacturing technologies, are paving the way toward innovative electronic devices with unprecedented levels of adaptability and multifunctionality. In this review, we summarize recent progress in stimuli-responsive materials for intelligent electronic devices. We highlight various material design strategies, their corresponding stimuli-triggered responses, and applications in sensors, actuators, and energy systems. Finally, we discuss current challenges focusing on multi-functional, integrated, and reconfigurable electronics and outline future trends that inspire the next-generation devices.
{"title":"Recent advances in stimuli-responsive materials for intelligent electronics","authors":"Siyao Chen , Hongqiu Wei , Cheng Lin , Hanxing Zhao , Chaoqun Dong , Xue Wan","doi":"10.1016/j.mtelec.2025.100152","DOIUrl":"10.1016/j.mtelec.2025.100152","url":null,"abstract":"<div><div>Stimuli-responsive materials, which undergo variations in their physical or chemical properties in response to external stimuli, have recently drawn increasing attention for their integration into next-generation intelligent electronics. Their capabilities to adjust shapes and properties, combined with advanced manufacturing technologies, are paving the way toward innovative electronic devices with unprecedented levels of adaptability and multifunctionality. In this review, we summarize recent progress in stimuli-responsive materials for intelligent electronic devices. We highlight various material design strategies, their corresponding stimuli-triggered responses, and applications in sensors, actuators, and energy systems. Finally, we discuss current challenges focusing on multi-functional, integrated, and reconfigurable electronics and outline future trends that inspire the next-generation devices.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100152"},"PeriodicalIF":0.0,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143848657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-10DOI: 10.1016/j.mtelec.2025.100151
Yimin Sun , Ting Wang , Jiali Luo , Jianhua Chen , Wei Huang , Junqiao Ding
Incorporation of porous semiconductors into transistors is a crucial area of research and innovation as it offers a unique opportunity to enhance device performance through precise control of material characteristics at the nanoscale. Moreover, it introduces the potential for the realization of next-generation electronics with higher efficiency, flexibility, and functionality. In this review, we first introduce typical dense channel materials employed in transistors and highlight the advantages of utilizing porous semiconductors. Subsequently, recent advances in various types of porous semiconductors, including nanoporous, microporous, and nanomesh materials used in transistor channels, are summarized. By systematically analyzing the structure-property-application relationships of these materials, we provide a forward-looking perspective on both opportunities and challenges in the field. The review establishes a comprehensive foundation and perspective for advancing transistor technology and broadening its potential across diverse electronic applications.
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Pub Date : 2025-03-28DOI: 10.1016/j.mtelec.2025.100149
Mingyang Wang , Huihui Zhu , Ao Liu
Transparent copper iodide (CuI) holds significant promise as an emerging semiconductor for high-performance ultraviolet (UV) photodetectors, owing to its high mobility and suitable band gap, which enables efficient UV absorption while suppressing visible light. However, its intrinsic high hole concentration results in extremely high dark current, leading to low signal-to-noise ratio and detectivity. To address this issue, we deposited a Zn-doped CuI channel and fabricated phototransistors using a low-cost solution process at low temperatures. By modulating the hole concentration and involving gate bias modulation, we achieved superior figures of merit for 365 nm UV detection. These include a high responsivity of 1.9 × 103 A/W, a detectivity of up to 2.8 × 1014 Jones, and an impressive external quantum efficiency of 6.4 × 105 %. To the best of our knowledge, these values represent the highest performance among all reported CuI-based photodetectors. Our results demonstrate the significant potential of CuI phototransistors for future large-area, low-cost ultraviolet detection systems.
{"title":"High-performance CuI-based ultraviolet phototransistors","authors":"Mingyang Wang , Huihui Zhu , Ao Liu","doi":"10.1016/j.mtelec.2025.100149","DOIUrl":"10.1016/j.mtelec.2025.100149","url":null,"abstract":"<div><div>Transparent copper iodide (CuI) holds significant promise as an emerging semiconductor for high-performance ultraviolet (UV) photodetectors, owing to its high mobility and suitable band gap, which enables efficient UV absorption while suppressing visible light. However, its intrinsic high hole concentration results in extremely high dark current, leading to low signal-to-noise ratio and detectivity. To address this issue, we deposited a Zn-doped CuI channel and fabricated phototransistors using a low-cost solution process at low temperatures. By modulating the hole concentration and involving gate bias modulation, we achieved superior figures of merit for 365 nm UV detection. These include a high responsivity of 1.9 × 10<sup>3</sup> A/W, a detectivity of up to 2.8 × 10<sup>14</sup> Jones, and an impressive external quantum efficiency of 6.4 × 10<sup>5</sup> %. To the best of our knowledge, these values represent the highest performance among all reported CuI-based photodetectors. Our results demonstrate the significant potential of CuI phototransistors for future large-area, low-cost ultraviolet detection systems.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100149"},"PeriodicalIF":0.0,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143738571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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