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英文中文

Ultra-compact magnetoelectric sensor for femto-Tesla VLF signal reception 用于飞特斯拉VLF信号接收的超紧凑型磁电传感器

Materials Today Electronics

Pub Date : 2025-01-09 DOI: 10.1016/j.mtelec.2025.100135

Cunzheng Dong , Changxing Sun , Lei Chen , Yifan He , Yisi Liu , Bin Luo , Nian X. Sun

Very low-frequency (VLF) electromagnetic waves can penetrate dense, conductive media such as earth and saltwater, with minimal attenuation, enabling long-distance signal transmission via ionospheric reflection. These characteristics make VLF ideal for applications in submarine navigation, subterranean mapping, underground communication, and ionospheric remote sensing. Conventional VLF signal reception has relied on magnetic loop antennas due to their low noise performance; however, their large size and reduced sensitivity due to low quality factors (Q) limit their use in portable and compact applications, particularly in underwater and underground environments. To address these challenges, we propose an ultra-compact room-temperature extremely sensitive femto-tesla magnetic sensor based on a strain-mediated high-Q Metglas/Quartz magnetoelectric (ME) resonator operating at its electromechanical resonance (EMR) at 24.55 kHz for VLF signal reception. The Metglas/Quartz ME sensor demonstrates sensitivity and magnetic noise performance enhancement by an order of magnitude compared to conventional Metglas/PZT ME sensors, achieving an ultra-low equivalent magnetic noise level of 5 fT/Hz^1/2, owing to high magnetic permeability and magnetostriction of Metglas and the high quality factor of Quartz at EMR. Moreover, the Metglas/Quartz ME VLF receiver exhibits overwhelming near-field and far-field VLF signal reception capability, realizing a successful reception of a VLF signal ∼400 km away from the NAA VLF Transmitter Cutler, with a 55 dB signal-to-noise (SNR) ratio. The demonstrated ultra-compact high-Q Metglas/Quartz ME sensor capable of femto-tesla VLF signal reception shows significant improvements in magnetic sensing capability, size, power consumption, and cost compared to traditional magnetic loop antennas, making it a promising solution for portable VLF signal reception in challenging environments.

甚低频（VLF）电磁波可以穿透致密的导电介质，如土壤和盐水，衰减最小，通过电离层反射实现远距离信号传输。这些特性使VLF成为海底导航、地下测绘、地下通信和电离层遥感应用的理想选择。传统的VLF信号接收依赖于磁环天线，由于其低噪声性能；然而，它们的大尺寸和由于低质量因子(Q)而降低的灵敏度限制了它们在便携式和紧凑型应用中的使用，特别是在水下和地下环境中。为了解决这些挑战，我们提出了一种基于应变中介的高q metglass /石英磁电（ME）谐振器的超紧凑室温极敏感飞特斯拉磁传感器，该谐振器在24.55 kHz的机电共振（EMR）下工作，用于VLF信号接收。与传统的metglass /PZT ME传感器相比，metglass /Quartz ME传感器的灵敏度和磁噪声性能提高了一个数量级，由于metglass的高磁导率和磁致伸缩以及石英在EMR下的高质量因子，实现了5 fT/Hz1/2的超低等效磁噪声水平。此外，metglass /Quartz ME VLF接收器显示出强大的近场和远场VLF信号接收能力，实现了距离NAA VLF发射机Cutler 400公里远的VLF信号的成功接收，信噪比为55 dB。与传统的磁环天线相比，演示的超小型高q metglass /Quartz ME传感器能够接收飞至特斯拉的VLF信号，在磁传感能力、尺寸、功耗和成本方面都有显著改进，使其成为具有挑战性环境下便携式VLF信号接收的有前途的解决方案。

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引用次数: 0

Recent advances in organic semiconductor crystalline microwire field-effect transistors 有机半导体晶体微线场效应晶体管的研究进展

Materials Today Electronics

Pub Date : 2024-12-27 DOI: 10.1016/j.mtelec.2024.100134

Dao Duy Thanh , Chia-Hsun Nieh , Ting-Yu Wang , Qun-Gao Chen , Wen-Ya Lee , Chu-Chen Chueh

Organic crystal microwires (OCMs) have attracted much attention in the last decade due to their great potential for fabricating high-performance organic field-effect transistors (OFETs) and related applications including circuits, displays, sensors, as well as flexible and wearable devices. OCMs offer a number of advantages, such as long-range ordering, the absence of grain boundaries, low defect density, and flexibility. However, the preparation of tiny-sized, highly crystalline and homogeneous ribbons faces considerable challenges. Therefore, efforts have been made to develop new processing methods to produce high-quality OCMs. This perspective describes recent simple and widely used techniques for the preparation of OCMs, including both dry and wet processes. The advantages and limitations of these different techniques are discussed. In addition, we summarize recent advances in the performance of OCMs-based OFETs, comparing the charge-transporting properties of different preparation methods, including OCMs and thin films. Finally, the potential and future prospects of utilizing crystal microwires in perovskite FETs are also discussed.

在过去的十年中，有机晶体微线（ocm）由于其在制造高性能有机场效应晶体管（ofet）以及相关应用（包括电路，显示器，传感器以及柔性和可穿戴设备）方面的巨大潜力而引起了人们的广泛关注。ocm提供了许多优点，例如远程排序、没有晶界、低缺陷密度和灵活性。然而，制备小尺寸，高结晶性和均匀性的条带面临着相当大的挑战。因此，人们一直在努力开发新的加工方法来生产高质量的ocm。这一观点描述了最近用于制备ocm的简单和广泛使用的技术，包括干法和湿法工艺。讨论了这些不同技术的优点和局限性。此外，我们总结了近年来基于ocm的ofet的性能进展，比较了不同制备方法的电荷输运性能，包括ocm和薄膜。最后，讨论了晶体微线在钙钛矿场效应管中应用的潜力和前景。

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引用次数: 0

Ferroelectric memristors based on double perovskite Bi2FeCoO6 for synaptic performance and human expression recognition storage 基于双钙钛矿Bi2FeCoO6的铁电记忆电阻器用于突触性能和人类表达识别存储

Materials Today Electronics

Pub Date : 2024-12-12 DOI: 10.1016/j.mtelec.2024.100133

Dong-Ping Yang , Wen-Min Zhong , Jun Li , Xin-Gui Tang , Qi-Jun Sun , Qiu-Xiang Liu , Yan-Ping Jiang

This study reports for the first time the application of double perovskite thin-film devices based on the Bi₂FeCoO₆ (BFCO) compound in non-volatile ferroelectric memristors. By spin-coating BFCO onto an N-type silicon (N-Si) substrate, a P-N junction was formed, yielding a thin-film device with ferroelectric properties. The device demonstrated a maximum polarization value of 46.09 μC/cm² and a high switching ratio of 293, along with excellent long-term stability (over 7 days) and high repeatability (1000 cycles). Furthermore, we investigated the synaptic characteristics of the device, including short-term plasticity, paired-pulse facilitation, and long-term potentiation/inhibition behaviors. By designing a confusion matrix recognition scenario with a binary neural network, we validated the potential of double perovskite ferroelectric memristors in intelligent learning applications. Additionally, leveraging the synaptic plasticity of the device, we developed a modal storage memory and recognition system for human emotions. This work not only provides new insights into the development of high-performance double perovskite ferroelectric memristors but also lays the foundation for optimizing synaptic performance in intelligent learning applications.

本研究首次报道了基于Bi2FeCoO6 （BFCO）化合物的双钙钛矿薄膜器件在非易失性铁电记忆电阻器中的应用。通过将BFCO自旋涂覆在n型硅（N-Si）衬底上，形成了P-N结，产生了具有铁电性能的薄膜器件。该器件的最大极化值为46.09 μC/cm²，开关比为293，具有良好的长期稳定性（超过7天）和高重复性（1000次循环）。此外，我们还研究了该装置的突触特性，包括短期可塑性、配对脉冲促进和长期增强/抑制行为。通过设计一个二元神经网络的混淆矩阵识别场景，我们验证了双钙钛矿铁电记忆电阻器在智能学习应用中的潜力。此外，利用该装置的突触可塑性，我们开发了一种人类情感的模态存储记忆和识别系统。这项工作不仅为高性能双钙钛矿铁电记忆电阻器的开发提供了新的见解，而且为优化智能学习应用中的突触性能奠定了基础。

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引用次数: 0

Contact engineering for two-dimensional van der Waals semiconductors 二维范德华半导体的接触工程

Materials Today Electronics

Pub Date : 2024-12-07 DOI: 10.1016/j.mtelec.2024.100132

Jiachen Tang, Shuaixing Li, Li Zhan, Songlin Li

Two-dimensional (2D) semiconductors represent the most promising post-silicon channel materials for ultimate electronics. However, the unique atomic thickness renders them incompatible with traditional atomic doping technique through ion implantation and thermal activation, which poses a key challenge for constructing ohmic contacts with 2D semiconductors. In the last decade, constant efforts have been devoted to address this critical challenge. In this article, by casting light on the origins of contact resistance between electrodes and 2D semiconductors, we review various strategies of contact engineering for 2D van der Waals semiconductors and the steady progress achieved in this specific issue, in order to provide guidance for device design and integration of 2D semiconductors for next-generation electronics.

二维（2D）半导体代表了最有前途的后硅通道材料的最终电子。然而，独特的原子厚度使其无法通过离子注入和热活化与传统的原子掺杂技术相兼容，这对构建与二维半导体的欧姆接触构成了关键挑战。在过去十年中，一直致力于解决这一重大挑战。本文通过分析电极与二维半导体接触电阻的来源，回顾了二维范德华半导体接触工程的各种策略以及在这一特定问题上取得的稳步进展，以期为下一代电子器件的二维半导体器件设计和集成提供指导。

引用次数: 0

Semiconductor sensing surfaces via oxygen-injection treatment 通过氧注入处理的半导体传感表面

Materials Today Electronics

Pub Date : 2024-12-01 DOI: 10.1016/j.mtelec.2024.100120

Xiaowu Wang, Zhenggang Xue, Jiaqiang Xu

引用次数: 0

Nanotwinned thermoelectric materials 纳米孪晶热电材料

Materials Today Electronics

Pub Date : 2024-12-01 DOI: 10.1016/j.mtelec.2024.100128

Ting-Rui Luo , Yingchao Wei , Zheng Ma , Junyou Yang

Thermoelectric materials is the key energy conversion unit of thermoelectic module, whose figure of merit ZT determines largely the energy conversion efficiency of thermoelectric modules. Therefore, how to improve the ZT values of thermoelectric materials has become a research focus in thermoelectric community. Recently, nanotwins have attracted great attention in thermoelectric community because of its merits of low carrier scattering, strong phonon scattering, and effective hindering effect on dislocation motion. Theoretical and experimental studies have shown that nanotwins have great potential in improving the thermoelectric properties (i.e., figure of merit ZT) and mechanical properties (e.g., plastic deformation strength, fracture toughness) of thermoeletric materials. Herein, we summary the progress of theoretical and experimental reseach on nanotwinned thermoelectric materials, including bismuth telluride alloys, Cu-Sn-S based semiconductors, InSb semiconductor, constantan based alloys, and high entropy semiconductor, providing feasible reference for nanotwins design of other thermoelectric materials.

热电材料是热电模块的关键能量转换单元，其性能值ZT在很大程度上决定了热电模块的能量转换效率。因此，如何提高热电材料的ZT值已成为热电学界的研究热点。近年来，纳米孪晶以其低载流子散射、强声子散射和对位错运动的有效抑制等优点受到热电界的广泛关注。理论和实验研究表明，纳米孪晶在改善热电材料的热电性能（如ZT）和力学性能（如塑性变形强度、断裂韧性）方面具有很大的潜力。本文总结了碲化铋合金、Cu-Sn-S基半导体、InSb半导体、康士坦基合金和高熵半导体等纳米孪晶热电材料的理论和实验研究进展，为其他热电材料的纳米孪晶设计提供了可行的参考。

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引用次数: 0

Recent advancements and challenges in highly stable all-inorganic perovskite solar cells 高稳定性全无机过氧化物太阳能电池的最新进展与挑战

Materials Today Electronics

Pub Date : 2024-11-22 DOI: 10.1016/j.mtelec.2024.100127

Sunkyu Kim , Muhammad Adnan , Zobia Irshad, Wonjong Lee, Siwon Yun, Hyeji Han, Jongchul Lim

Organic–inorganic perovskite solar cells (PSCs) have attracted significant attention because of their outstanding photoelectric conversion efficiency, simple fabrication process, and long exciton diffusion lengths. In particular, the power conversion efficiency of single-junction PSCs is 26.1%, whereas that of multi-junction silicon/perovskite tandem solar cells reaches an impressive 33.9%, indicating good prospects for the solar cell market. However, traditional organic–inorganic PSCs are highly sensitive to moisture, light, and heat, which negatively affect their stability and thereby commercialization. Nowadays, all-inorganic perovskites are attracting considerable attention for application in solar cells because of their potential to attain high resistance to environmental factors. All-inorganic perovskites have been considered an alternative to organic–inorganic perovskites because of their advantages over organic–inorganic perovskites, such as the capability to stabilize the photoactive phase, long-term thermal stability, and the possibility of tailoring the bandgap structure. Herein, we perform a detailed meta-analysis of materials and approaches used for the preparation of all-inorganic perovskite thin films and discuss recent advancements in key performance parameters such as efficiency, stability, and electrical and optoelectronic properties. Finally, we outline directions for future studies.

有机-无机过氧化物太阳能电池（PSCs）因其出色的光电转换效率、简单的制造工艺和较长的激子扩散长度而备受关注。其中，单结 PSC 的功率转换效率为 26.1%，而多结硅/过氧化物串联太阳能电池的功率转换效率则高达 33.9%，显示出太阳能电池市场的良好前景。然而，传统的有机-无机多晶体太阳能电池对湿度、光和热非常敏感，这对其稳定性和商业化产生了负面影响。如今，全无机过氧化物因其对环境因素的高耐受性而在太阳能电池中的应用备受关注。与有机-无机包晶石相比，全无机包晶石具有稳定光活性相的能力、长期的热稳定性以及定制带隙结构的可能性等优势，因此被认为是有机-无机包晶石的替代品。在此，我们对用于制备全无机包晶薄膜的材料和方法进行了详细的元分析，并讨论了在关键性能参数（如效率、稳定性、电学和光电特性）方面的最新进展。最后，我们概述了未来的研究方向。

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引用次数: 0

Coherent epitaxy of HfxZr1-xO2 thin films by high-pressure magnetron sputtering 通过高压磁控溅射实现 HfxZr1-xO2 薄膜的相干外延

Materials Today Electronics

Pub Date : 2024-11-13 DOI: 10.1016/j.mtelec.2024.100124

Tengteng Zhang , Yuyan Fan , Zhipeng Xue , Mengwei Si , Zhen Wang , Xiuyan Li , Yanwei Cao

Due to remarkable high-k and ferroelectric properties in CMOS devices, the study of crystalline Hf_xZr_1-xO₂ (HZO) thin films has attracted tremendous interest recently. However, up to now, the epitaxial growth of HZO films has only been achieved by pulse laser deposition, a technique scarcely utilized in CMOS devices. Therefore, developing appropriate epitaxial methods of HZO films (such as sputtering) is fairly necessary, but a challenge at present. In this work, high-quality single-crystalline HZO films were synthesized by high-pressure magnetron sputtering. The epitaxial growth of HZO films on yttria-stabilized zirconia (YSZ) substrate was demonstrated by a combination of high-resolution X-ray diffraction, atom force microscope, and scanning transmission electron microscope. In addition, good insulating characteristics were obtained by replacing insulating substrates with conductive substrates as electrodes. Our results provide a novel way for the epitaxial growth of the single-crystalline structure of HZO thin films towards the high performance of high-k and ferroelectric devices.

由于 HfxZr1-xO2 (HZO) 晶体薄膜在 CMOS 设备中具有显著的高 K 特性和铁电特性，其研究近来引起了人们的极大兴趣。然而，迄今为止，HZO 薄膜的外延生长只能通过脉冲激光沉积来实现，而这种技术在 CMOS 器件中还很少使用。因此，开发适当的 HZO 薄膜外延方法（如溅射）是相当必要的，但目前仍是一项挑战。本研究采用高压磁控溅射法合成了高质量的单晶 HZO 薄膜。结合高分辨率 X 射线衍射、原子力显微镜和扫描透射电子显微镜，证明了 HZO 薄膜在钇稳定氧化锆（YSZ）基底上的外延生长。此外，通过用导电基底取代绝缘基底作为电极，还获得了良好的绝缘特性。我们的研究结果为 HZO 薄膜单晶结构的外延生长提供了一种新方法，从而实现高性能的高介电和铁电器件。

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引用次数: 0

Fabrication of bilayer ITO/YZO/PMMA/Al memory devices with insight ternary switching mechanism 制造具有三元开关机制的双层 ITO/YZO/PMMA/Al 存储器件

Materials Today Electronics

Pub Date : 2024-11-07 DOI: 10.1016/j.mtelec.2024.100125

Anirudh Kumar , Satendra Pal Singh , Sejoon Lee , Sanjeev Kumar Sharma

Two terminal resistive switching memories are emerging candidates for the next generation of non-volatile memory in the upcoming era of artificial intelligence and big data generated globally. Much research is currently focused on developing write-once-read-many-times (WORM) memory devices, which offer the advantages of small size, high speed, improved energy consumption, and large data capacity. Nanostructured organic/inorganic heterojunction composites have garnered significant attention due to their excellent scalability and low-cost fabrication. In the present study, the YZO/PMMA hybrid nanocomposite bilayer ReRAM was fabricated on ITO substrates. The I-V characteristics of the fabricated ITO/YZO/PMMA/Al device exhibited the ternary WORM switching behavior (HRS, LRS1, and LRS2 states). It has been observed that three states of “HRS”, “LRS1” and “LRS2” exhibit a distinct current ratio of LRS1/HRS and LRS2/HRS of 10^1.6 and 10^2.4_, respectively, with good data retention (up to 500 h). It was demonstrated that Y-dopant concentration into ZnO significantly transits the switching behavior of ITO/ZnO/PMMA/Al memory from binary to ternary WORM switching characteristics. Ohmic conduction and space charge-limited current (SCLC) were observed in the HRS. In LRS1, the Schottky emission mechanism was observed, while in LRS2, Ohmic conduction was observed. The physical model of the formation of permanent conducting filaments (CFs) consisting of oxygen vacancies in the device's active layer is proposed to explain the RS behavior. These findings reveal the low-cost development of high-density, non-volatile memory devices operated with very low power consumption that can be used to protect data against unauthorized software/hardware and hackers.

在即将到来的人工智能和全球大数据时代，两端电阻开关存储器是下一代非易失性存储器的新兴候选器件。目前，许多研究都集中在开发一次写入、多次读取（WORM）存储器件上，这种存储器件具有体积小、速度快、能耗低和数据容量大等优点。纳米结构的有机/无机异质结复合材料因其出色的可扩展性和低成本制造而备受关注。本研究在 ITO 基底上制造了 YZO/PMMA 混合纳米复合材料双层 ReRAM。制备的 ITO/YZO/PMMA/Al 器件的 I-V 特性表现出三元 WORM 开关行为（HRS、LRS1 和 LRS2 状态）。据观察，"HRS"、"LRS1 "和 "LRS2 "三种状态下的 LRS1/HRS 和 LRS2/HRS 的电流比分别为 101.6 和 102.4，数据保持良好（长达 500 小时）。研究表明，ZnO 中的 Y 掺杂浓度极大地改变了 ITO/ZnO/PMMA/Al 存储器的开关行为，使其从二元 WORM 开关特性转变为三元 WORM 开关特性。在 HRS 中观察到了欧姆传导和空间电荷限制电流 (SCLC)。在 LRS1 中观察到了肖特基发射机制，而在 LRS2 中则观察到了欧姆传导。我们提出了由器件活性层中氧空位组成的永久导电丝（CF）形成的物理模型来解释 RS 行为。这些发现揭示了高密度、非易失性存储器件的低成本开发，其运行功耗极低，可用于保护数据免受未经授权的软件/硬件和黑客攻击。

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引用次数: 0

Thermoelectric performance of Cu3InSnSe5 and MnSe pseudo-binary solid solution Cu3InSnSe5 和 MnSe 伪二元固溶体的热电性能

Materials Today Electronics

Pub Date : 2024-11-07 DOI: 10.1016/j.mtelec.2024.100126

Guanzheng Luo, Wang Li, Yingchao Wei, Yao Dai, Wenjie Shu, Linyao Wu, Xin Li, Yubo Luo, Junyou Yang

Cu₃InSnSe₅ is a newly discovered copper-based diamond-like thermoelectric semiconductor, whose thermoelectric performance can be further enhanced by the MnSe alloying herein. We observed the formation of MnSe₂ precipitates that effectively scattered low-frequency phonons, which significantly reduced the lattice thermal conductivity at mid-to-low temperatures. While a high amount of MnSe alloying led to the formation of MnSe₂ precipitates which enhanced the phonons scattering, a smaller MnSe content improved the power factor in a certain as well. Ultimately, our research achieved a peak ZT of 1.00 and an average ZT of 0.50 over the 300–773 K temperature range by 10 mol.% MnSe alloyed Cu₃InSnSe₅ pseudo-binary solid solution, demonstrating the potential of MnSe alloying for optimizing the thermoelectric performance of copper-based diamond-like semiconductor materials.

Cu3InSnSe5 是一种新发现的铜基类金刚石热电半导体，其中的 MnSe 合金可进一步提高其热电性能。我们观察到 MnSe2 沉淀的形成有效地分散了低频声子，从而显著降低了中低温下的晶格热导率。虽然大量的 MnSe 合金会导致 MnSe2 沉淀的形成，从而增强声子散射，但较少的 MnSe 含量也会在一定程度上提高功率因数。最终，我们的研究通过 10 mol.% MnSe 合金 Cu3InSnSe5 伪二元固溶体，在 300-773 K 温度范围内实现了 1.00 的峰值 ZT 和 0.50 的平均 ZT，证明了 MnSe 合金在优化铜基类金刚石半导体材料热电性能方面的潜力。

引用次数: 0

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