Pub Date : 2024-01-09DOI: 10.1088/1674-1056/ad1c59
Hongxin Chen, Xiaobo Yuan, Junfeng Ren
The anomalous valley Hall effect (AVHE) can be used to explore and utilize valley degrees of freedom in materials, which has potential applications in fields such as information storage, quantum computing and optoelectronics. AVHE exists in two-dimensional (2D) materials possessing valley polarization (VP), and such 2D materials usually belong to the hexagonal honeycomb lattice. Therefore, it is necessary to achieve valleytronic materials with VP that are more readily to be synthesized and applicated experimentally. In this topical review, we introduce recent developments on realizing VP as well as AVHE through different methods, i.e., doping transition metal atoms, building ferrovalley heterostructures and searching for ferrovalley materials. Moreover, 2D ferrovalley systems under external modulation are also discussed. 2D valleytronic materials with AVHE demonstrate excellent performance and potential applications, which offer the possibility of realizing novel low-energy-consuming devices, facilitating further development of device technology, realizing miniaturization and enhancing functionality of them.
{"title":"Anomalous Valley Hall Effect in Two-dimensional Valleytronic Materials","authors":"Hongxin Chen, Xiaobo Yuan, Junfeng Ren","doi":"10.1088/1674-1056/ad1c59","DOIUrl":"https://doi.org/10.1088/1674-1056/ad1c59","url":null,"abstract":"\u0000 The anomalous valley Hall effect (AVHE) can be used to explore and utilize valley degrees of freedom in materials, which has potential applications in fields such as information storage, quantum computing and optoelectronics. AVHE exists in two-dimensional (2D) materials possessing valley polarization (VP), and such 2D materials usually belong to the hexagonal honeycomb lattice. Therefore, it is necessary to achieve valleytronic materials with VP that are more readily to be synthesized and applicated experimentally. In this topical review, we introduce recent developments on realizing VP as well as AVHE through different methods, i.e., doping transition metal atoms, building ferrovalley heterostructures and searching for ferrovalley materials. Moreover, 2D ferrovalley systems under external modulation are also discussed. 2D valleytronic materials with AVHE demonstrate excellent performance and potential applications, which offer the possibility of realizing novel low-energy-consuming devices, facilitating further development of device technology, realizing miniaturization and enhancing functionality of them.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"26 2","pages":""},"PeriodicalIF":1.7,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139441720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1088/1674-1056/ad19d8
Zhi-Yuan Li, Jianfeng Chen
{"title":"Erratum to “Atomic-scale electromagnetic theory bridging optics in microscopic world and macroscopic world”","authors":"Zhi-Yuan Li, Jianfeng Chen","doi":"10.1088/1674-1056/ad19d8","DOIUrl":"https://doi.org/10.1088/1674-1056/ad19d8","url":null,"abstract":"\u0000 <jats:p />","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"48 2","pages":""},"PeriodicalIF":1.7,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139452864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1088/1674-1056/ad19d4
Jing-Yao Bian, Ye Tao, Zhong-Qiang Wang, Xiao-Ning Zhao, Ya Lin, Hai-Yang Xu, and Yi-Chun Liu
Transient memories, which can physically disappear without leaving traceable remains over a period of normal operation, are attracting increasing attention for potential applications in the fields of data security and green electronics. Resistive random access memory (RRAM) is a promising candidate for next-generation memory. In this context, biocompatible ι-carrageenan (ι-car), extracted from natural seaweed, is introduced for the fabrication of RRAM devices (Ag/ι-car/Pt). Taking advantage of the complexation processes between the functional groups (C-O-C, C-O-H, et al.) and Ag metal ions, a lower migration barrier of Ag ions and a high-speed switching (22.2 ns for SET operation/26 ns for RESET operation) were achieved, resulting in an ultralow power consumption of 56 fJ. And the prepared Ag/ι-car/Pt RRAM devices also revealed the capacities of multilevel storage and flexible. In addition, thanks to the hydrophilic groups of ι-car molecule, the RRAM devices can be rapidly dissolved in deionized (DI) water within 13 minutes, showing excellent transient characteristic. This work demonstrates that ι-car based RRAM devices have great potential for applications in secure storage applications, flexible electronics and transient electronics.
{"title":"Biodegradable and flexible ι-carrageenan based RRAM with ultralow power consumption","authors":"Jing-Yao Bian, Ye Tao, Zhong-Qiang Wang, Xiao-Ning Zhao, Ya Lin, Hai-Yang Xu, and Yi-Chun Liu","doi":"10.1088/1674-1056/ad19d4","DOIUrl":"https://doi.org/10.1088/1674-1056/ad19d4","url":null,"abstract":"\u0000 Transient memories, which can physically disappear without leaving traceable remains over a period of normal operation, are attracting increasing attention for potential applications in the fields of data security and green electronics. Resistive random access memory (RRAM) is a promising candidate for next-generation memory. In this context, biocompatible ι-carrageenan (ι-car), extracted from natural seaweed, is introduced for the fabrication of RRAM devices (Ag/ι-car/Pt). Taking advantage of the complexation processes between the functional groups (C-O-C, C-O-H, et al.) and Ag metal ions, a lower migration barrier of Ag ions and a high-speed switching (22.2 ns for SET operation/26 ns for RESET operation) were achieved, resulting in an ultralow power consumption of 56 fJ. And the prepared Ag/ι-car/Pt RRAM devices also revealed the capacities of multilevel storage and flexible. In addition, thanks to the hydrophilic groups of ι-car molecule, the RRAM devices can be rapidly dissolved in deionized (DI) water within 13 minutes, showing excellent transient characteristic. This work demonstrates that ι-car based RRAM devices have great potential for applications in secure storage applications, flexible electronics and transient electronics.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"15 6","pages":""},"PeriodicalIF":1.7,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139452783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
By utilizing the fluctuation exchange approximation method, we perform a study on the superconducting pairing symmetry in a t2g three-orbital model on the square lattice. Although the tight-binding parameters of the model are based on Sr2RuO4, we have systematically studied the evolution of superconducting pairing symmetry with the carrier density and interactions, making our findings relevant to a broader range of material systems. Under a moderate Hund’s coupling, we find that spin fluctuations dominate the superconducting pairing, leading to a prevalent spin-singlet pairing with a d