The manipulation of topological electronic states is a key scientific challenge in the development of next-generation quantum devices. In this work, we propose a universal topological engineering strategy based on magnetic symmetry control, realized via van der Waals heterostructures of rare-earth nitrides and an inert GaS spacer, denoted as XN2/GaS/XN2 (X = Gd, Tb, Dy, Ho, Tm, Er). This platform enables programmable topological phase transitions between ferromagnetic quantum spin Hall insulators (QSHIs) and antiferromagnetic quantum anomalous Hall insulators (QAHIs). By continuously tuning the in-plane magnetization direction, the Berry curvature distribution is effectively modulated, inducing periodic transitions between topologically trivial and nontrivial states. Taking ErN2/GaS/ErN2 as a representative system, we track the evolution of the Chern number and ℤ2 invariant with magnetization orientation, demonstrating a reversible switching between QSHI and QAHI phases. The same mechanism is found to operate across the full series of XN2/GaS/XN2 heterostructures, establishing its generality. These results offer both a robust theoretical framework and a practical material platform for the magnetization-controlled realization of quantum spin and anomalous Hall phases in two-dimensional magnetic van der Waals systems, paving the way for reconfigurable topological devices.
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