首页 > 最新文献

2021 Symposium on VLSI Circuits最新文献

英文 中文
Fully-Digital Self-Calibrating Decoder with Sub-µW, 1.6fJ/convstep and 0.0075mm2 per Receptor for Scaling to Human-Like Tactile Sensing Density 全数字自校准解码器,亚µW, 1.6fJ/convstep和0.0075mm2每个受体缩放到类似人类的触觉感应密度
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492329
Prachi Agarwal, V. Rajanna, Toh Wei Da, Benjamin C. K. Tee, M. Alioto
This work presents an area- and energy-efficient decoder for tactile e-skin sensing encoding to scale up receptor density to the human scale. A fully-digital signal-adaptive receptor interface and event decoder architecture are introduced, leveraging temporal/spatial tactile signal sparsity to dynamically reduce activity and time resolution at negligible accuracy degradation. A novel reference-less self-calibrating senseamp is introduced to cancel offset by exploiting the statistical balance of spread-spectrum tactile pulses and noise. The 40nm testchip shows 1.6-fJ/convstep energy (0.0075mm2 area) per receptor with 50X (5X) improvement over prior art, and 80-receptor e-skin aggregation on a single pad.
这项工作提出了一种面积和节能的解码器,用于触觉电子皮肤传感编码,将受体密度扩大到人体尺度。介绍了全数字信号自适应受体接口和事件解码器架构,利用时间/空间触觉信号稀疏性在可忽略不计的精度退化下动态减少活动和时间分辨率。利用扩频触觉脉冲和噪声的统计平衡,提出了一种新的无参考自校准传感器来抵消偏移量。40nm测试芯片显示每个受体1.6 fj /convstep能量(0.0075mm2面积),比现有技术提高50倍(5X),并在单个衬垫上聚集80个受体电子皮肤。
{"title":"Fully-Digital Self-Calibrating Decoder with Sub-µW, 1.6fJ/convstep and 0.0075mm2 per Receptor for Scaling to Human-Like Tactile Sensing Density","authors":"Prachi Agarwal, V. Rajanna, Toh Wei Da, Benjamin C. K. Tee, M. Alioto","doi":"10.23919/VLSICircuits52068.2021.9492329","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492329","url":null,"abstract":"This work presents an area- and energy-efficient decoder for tactile e-skin sensing encoding to scale up receptor density to the human scale. A fully-digital signal-adaptive receptor interface and event decoder architecture are introduced, leveraging temporal/spatial tactile signal sparsity to dynamically reduce activity and time resolution at negligible accuracy degradation. A novel reference-less self-calibrating senseamp is introduced to cancel offset by exploiting the statistical balance of spread-spectrum tactile pulses and noise. The 40nm testchip shows 1.6-fJ/convstep energy (0.0075mm2 area) per receptor with 50X (5X) improvement over prior art, and 80-receptor e-skin aggregation on a single pad.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132620067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra High Power Cooling Solution for 3D-ICs 3d - ic超高功率散热解决方案
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492489
C. J. Wu, S. Hsiao, J. Wang, W. H. Lin, C. W. Chang, T. Shao, C. Tung, Doug C. H. Yu
A direct silicon water cooling solution using fusion bonded silicon lid is proposed. It is successfully demonstrated as an effective cooling solution with total power >2600 W on a single SoC, equivalent to power density of 4.8 W/mm2. Low temperature logic chip to silicon lid fusion bonding, with trench/grid cooling structure cutting into silicon lid enables minimal thermal resistance between active device and cooling water and best cooling efficiency. Direct water cooling on logic chip silicon backside has also been demonstrated with power density better than 7 W/mm2.
提出了一种采用熔合硅盖的直接硅水冷却方案。作为一种有效的散热解决方案,它在单个SoC上的总功率>2600 W,相当于4.8 W/mm2的功率密度。低温逻辑芯片与硅盖熔合,硅盖采用沟槽/栅格冷却结构,使有源器件与冷却水之间的热阻最小,冷却效率最佳。逻辑芯片硅背面的直接水冷也已被证明功率密度优于7 W/mm2。
{"title":"Ultra High Power Cooling Solution for 3D-ICs","authors":"C. J. Wu, S. Hsiao, J. Wang, W. H. Lin, C. W. Chang, T. Shao, C. Tung, Doug C. H. Yu","doi":"10.23919/VLSICircuits52068.2021.9492489","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492489","url":null,"abstract":"A direct silicon water cooling solution using fusion bonded silicon lid is proposed. It is successfully demonstrated as an effective cooling solution with total power >2600 W on a single SoC, equivalent to power density of 4.8 W/mm2. Low temperature logic chip to silicon lid fusion bonding, with trench/grid cooling structure cutting into silicon lid enables minimal thermal resistance between active device and cooling water and best cooling efficiency. Direct water cooling on logic chip silicon backside has also been demonstrated with power density better than 7 W/mm2.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132998991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 1070 pJ/b 169 Mb/s Quad-core Digital Baseband SoC for Distributed and Cooperative Massive MIMO in 28 nm FD-SOI 一种1070 pJ/b 169mb /s四核数字基带SoC,用于28nm FD-SOI中分布式和协作式大规模MIMO
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492455
H. Prabhu, Liang Liu, F. Sheikh, O. Edfors
A 2.2 mm2 full digital baseband SoC with four heterogeneous cores for 128-node 8-users distributed massive MIMO is presented. Two specialized DSPs perform rapid over-the-air synchronization within 0.1ms. A highly optimized 8-complex lane MIMO vector processor provides 4x hardware efficiency improvement over general-purpose processors. Circuit optimizations and the use of body-bias result in 1070 pJ/b measured energy at 169 Mb/s detection rate.
提出了一种具有4个异构核的2.2 mm2全数字基带SoC,用于128节点8用户分布式大规模MIMO。两个专用dsp在0.1ms内执行快速空中同步。高度优化的8复杂通道MIMO矢量处理器比通用处理器提供4倍的硬件效率提高。电路优化和体偏置的使用导致在169 Mb/s的检测速率下测量能量为1070 pJ/b。
{"title":"A 1070 pJ/b 169 Mb/s Quad-core Digital Baseband SoC for Distributed and Cooperative Massive MIMO in 28 nm FD-SOI","authors":"H. Prabhu, Liang Liu, F. Sheikh, O. Edfors","doi":"10.23919/VLSICircuits52068.2021.9492455","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492455","url":null,"abstract":"A 2.2 mm2 full digital baseband SoC with four heterogeneous cores for 128-node 8-users distributed massive MIMO is presented. Two specialized DSPs perform rapid over-the-air synchronization within 0.1ms. A highly optimized 8-complex lane MIMO vector processor provides 4x hardware efficiency improvement over general-purpose processors. Circuit optimizations and the use of body-bias result in 1070 pJ/b measured energy at 169 Mb/s detection rate.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115139839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 20GS/s 8b Time-Interleaved Time-Domain ADC with Input-Independent Background Timing Skew Calibration 20GS/s 8b时域交错ADC与输入无关的背景时间倾斜校准
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492436
Minglei Zhang, Yan Zhu, Chi-Hang Chan, R. Martins
This paper demonstrates a background timing skew calibration for the time-interleaved (TI) ADCs using a direct time-based estimation to facilitate the input-independent and fast convergence features. It suppresses the timing spurs of a 20GS/s 8× TI-ADC below ‒50dB at a Nyquist input regardless of the calibrating input condition with 24 calibration cycles. The 8b time-domain TI-ADC achieves a 91.3fJ/conv.-step FoMWalden and >16GHz bandwidth.
本文演示了使用直接基于时间的估计对时间交错(TI) adc进行背景时序偏差校准,以促进与输入无关和快速收敛的特性。在奈奎斯特输入下,无论校准输入条件如何,它都能将20GS/s 8× TI-ADC的时序杂波抑制在-50dB以下,具有24个校准周期。8b时域TI-ADC达到91.3fJ/conv。-step formwalden和>16GHz带宽。
{"title":"A 20GS/s 8b Time-Interleaved Time-Domain ADC with Input-Independent Background Timing Skew Calibration","authors":"Minglei Zhang, Yan Zhu, Chi-Hang Chan, R. Martins","doi":"10.23919/VLSICircuits52068.2021.9492436","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492436","url":null,"abstract":"This paper demonstrates a background timing skew calibration for the time-interleaved (TI) ADCs using a direct time-based estimation to facilitate the input-independent and fast convergence features. It suppresses the timing spurs of a 20GS/s 8× TI-ADC below ‒50dB at a Nyquist input regardless of the calibrating input condition with 24 calibration cycles. The 8b time-domain TI-ADC achieves a 91.3fJ/conv.-step FoMWalden and >16GHz bandwidth.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122354956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A New Era of Tailored Computing 定制计算的新时代
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492400
M. Papermaster, S. Kosonocky, G. Loh, S. Naffziger
The worldwide computing market grew tremendously over the past decades, and looking toward the future, these trends do not appear to be slowing down. Moore’s Law coupled with incredible innovation in hardware and software are engines driving this growth. However, the entire industry faces a barrage of challenges including the slowing of Moore’s Law, stringent power and energy constraints, an always-connected society, and disruptions from the on-going artificial intelligence revolution. To continue delivering ever higher-performance computing solutions amid these difficulties, the industry needs to pivot to a new mindset of "Tailored Computing." The need for and opportunities to tailor our technologies in all aspects of future compute will propel the industry toward heterogeneity in everything it does.
在过去的几十年里,全球计算市场增长迅猛,展望未来,这些趋势似乎不会放缓。摩尔定律加上令人难以置信的硬件和软件创新是推动这一增长的引擎。然而,整个行业面临着一系列挑战,包括摩尔定律的放缓、严格的电力和能源限制、始终连接的社会,以及正在进行的人工智能革命带来的破坏。为了在这些困难中继续提供更高性能的计算解决方案,业界需要转向“量身定制计算”的新思维。在未来计算的各个方面定制我们的技术的需求和机会将推动行业在其所做的一切中实现异构。
{"title":"A New Era of Tailored Computing","authors":"M. Papermaster, S. Kosonocky, G. Loh, S. Naffziger","doi":"10.23919/VLSICircuits52068.2021.9492400","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492400","url":null,"abstract":"The worldwide computing market grew tremendously over the past decades, and looking toward the future, these trends do not appear to be slowing down. Moore’s Law coupled with incredible innovation in hardware and software are engines driving this growth. However, the entire industry faces a barrage of challenges including the slowing of Moore’s Law, stringent power and energy constraints, an always-connected society, and disruptions from the on-going artificial intelligence revolution. To continue delivering ever higher-performance computing solutions amid these difficulties, the industry needs to pivot to a new mindset of \"Tailored Computing.\" The need for and opportunities to tailor our technologies in all aspects of future compute will propel the industry toward heterogeneity in everything it does.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131150822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 5.5mW/Channel 2-to-7 GHz Frequency Synthesizable Qubit-Controlling Cryogenic Pulse Modulator for Scalable Quantum Computers 用于可扩展量子计算机的5.5mW/通道2- 7 GHz频率合成量子比特低温脉冲调制器
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492343
K. Kang, Byungjun Kim, Gahyun Choi, Sun-Kyung Lee, Jisoo Choi, Jaeho Lee, Seokhyeong Kang, Moonjoo Lee, Ho-Jin Song, Y. Chong, J. Sim
This work presents a qubit controller IC based on the direct synthesis. The IC consists of six independently-working pulse modulators utilizing the same LO frequency. We propose a sinusoid-shaping nonlinear DAC followed by a linear interpolating DAC to improve both of energy and hardware efficiencies. The implemented IC in 40nm CMOS is verified by superconducting qubit operations with Rabi and Ramsey oscillations while consuming power of < 1/60 compared with the previous state-of-the-art.
本文提出了一种基于直接合成的量子比特控制器集成电路。该集成电路由六个独立工作的脉冲调制器组成,利用相同的LO频率。我们提出了一个正弦整形非线性DAC,然后是一个线性插值DAC,以提高能源和硬件效率。实现的40纳米CMOS集成电路通过Rabi和Ramsey振荡的超导量子比特运算进行了验证,与之前的最先进技术相比,功耗< 1/60。
{"title":"A 5.5mW/Channel 2-to-7 GHz Frequency Synthesizable Qubit-Controlling Cryogenic Pulse Modulator for Scalable Quantum Computers","authors":"K. Kang, Byungjun Kim, Gahyun Choi, Sun-Kyung Lee, Jisoo Choi, Jaeho Lee, Seokhyeong Kang, Moonjoo Lee, Ho-Jin Song, Y. Chong, J. Sim","doi":"10.23919/VLSICircuits52068.2021.9492343","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492343","url":null,"abstract":"This work presents a qubit controller IC based on the direct synthesis. The IC consists of six independently-working pulse modulators utilizing the same LO frequency. We propose a sinusoid-shaping nonlinear DAC followed by a linear interpolating DAC to improve both of energy and hardware efficiencies. The implemented IC in 40nm CMOS is verified by superconducting qubit operations with Rabi and Ramsey oscillations while consuming power of < 1/60 compared with the previous state-of-the-art.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125722891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
PIMCA: A 3.4-Mb Programmable In-Memory Computing Accelerator in 28nm for On-Chip DNN Inference 基于片上深度神经网络推理的34mb可编程内存计算加速器
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492403
Shihui Yin, Bo Zhang, Minkyu Kim, Jyotishman Saikia, Soon-Chan Kwon, Sungmeen Myung, Hyunsoo Kim, Sang Joon Kim, Mingoo Seok, Jae-sun Seo
We present a programmable in-memory computing (IMC) accelerator integrating 108 capacitive-coupling-based IMC SRAM macros of a total size of 3.4 Mb, demonstrating one of the largest IMC hardware to date. We developed a custom ISA featuring IMC and SIMD functional units with hardware loop to support a range of deep neural network (DNN) layer types. The 28nm prototype chip achieves system-level peak energy-efficiency of 437 TOPS/W and peak throughput of 4.9 TOPS at 40MHz, 1V supply.
我们提出了一个可编程内存计算(IMC)加速器,集成了108个总大小为3.4 Mb的基于电容耦合的IMC SRAM宏,展示了迄今为止最大的IMC硬件之一。我们开发了一个定制的ISA,具有IMC和SIMD功能单元,具有硬件环路,以支持一系列深度神经网络(DNN)层类型。28nm原型芯片在40MHz, 1V电源下实现了437 TOPS/W的系统级峰值能效和4.9 TOPS的峰值吞吐量。
{"title":"PIMCA: A 3.4-Mb Programmable In-Memory Computing Accelerator in 28nm for On-Chip DNN Inference","authors":"Shihui Yin, Bo Zhang, Minkyu Kim, Jyotishman Saikia, Soon-Chan Kwon, Sungmeen Myung, Hyunsoo Kim, Sang Joon Kim, Mingoo Seok, Jae-sun Seo","doi":"10.23919/VLSICircuits52068.2021.9492403","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492403","url":null,"abstract":"We present a programmable in-memory computing (IMC) accelerator integrating 108 capacitive-coupling-based IMC SRAM macros of a total size of 3.4 Mb, demonstrating one of the largest IMC hardware to date. We developed a custom ISA featuring IMC and SIMD functional units with hardware loop to support a range of deep neural network (DNN) layer types. The 28nm prototype chip achieves system-level peak energy-efficiency of 437 TOPS/W and peak throughput of 4.9 TOPS at 40MHz, 1V supply.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"17 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113970775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
A 10A/μs Fast Transient AOT Voltage Regulator on DDR5 DIMM with Dithered Pseudo-Constant Switching Frequency Achieving -6dB Harmonic Suppression 基于DDR5伪恒定开关频率抖动的10A/μs快速瞬态AOT稳压器实现-6dB谐波抑制
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492332
Taeyoung Chung, Sooa Kim, Jehyung Yoon, Hee-Min Han, K. Park, Hokyu Lee, Ho-Young Yoon, Sun-Kyu Lee, Jongyoon Lim, Yongjin Kwon, Jungbong Lee, Sung-Ung Kwak
The on-board voltage regulator in the DDR5 memory module is required to resiliently supply current at large load transient events and alleviate output noise at the same time. We present an adaptive on-time (AOT) buck regulator with a turbo dual-phase interleaving logic for stable regulation and on-time control with dithered pseudo-constant switching frequency to suppress output harmonics by 6dB. The voltage regulator delivers up to 10A with a peak efficiency of 92.5% and covers 10A/μs steep load transients.
DDR5存储模块中的板载稳压器需要在大负载瞬态事件时弹性地提供电流,同时减轻输出噪声。我们提出了一种自适应的on-time (AOT)降压调节器,采用涡轮双相交错逻辑进行稳定调节,并采用抖动的伪恒定开关频率进行on-time控制,以抑制输出谐波6dB。该稳压器输出电压高达10A,峰值效率为92.5%,可覆盖10A/μs陡负载瞬态。
{"title":"A 10A/μs Fast Transient AOT Voltage Regulator on DDR5 DIMM with Dithered Pseudo-Constant Switching Frequency Achieving -6dB Harmonic Suppression","authors":"Taeyoung Chung, Sooa Kim, Jehyung Yoon, Hee-Min Han, K. Park, Hokyu Lee, Ho-Young Yoon, Sun-Kyu Lee, Jongyoon Lim, Yongjin Kwon, Jungbong Lee, Sung-Ung Kwak","doi":"10.23919/VLSICircuits52068.2021.9492332","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492332","url":null,"abstract":"The on-board voltage regulator in the DDR5 memory module is required to resiliently supply current at large load transient events and alleviate output noise at the same time. We present an adaptive on-time (AOT) buck regulator with a turbo dual-phase interleaving logic for stable regulation and on-time control with dithered pseudo-constant switching frequency to suppress output harmonics by 6dB. The voltage regulator delivers up to 10A with a peak efficiency of 92.5% and covers 10A/μs steep load transients.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126219964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fully Integrated Electronic-Photonic Ultrasound Receiver Array for Endoscopic Imaging Applications in a Zero-Change 45nm CMOS-SOI Process 在零变化45纳米CMOS-SOI工艺中用于内窥镜成像的完全集成电子-光子超声接收器阵列
Pub Date : 2021-06-13 DOI: 10.23919/VLSICircuits52068.2021.9492412
P. Zarkos, S. Buchbinder, C. Adamopoulos, Sarika Madhvapathy, Olivia Hsu, J. Whinnery, Pavan Bhargava, V. Stojanović
This paper presents the first fully integrated 2-D array of electronic-photonic ultrasound sensors targeting low-power miniaturized ultrasound probes for endoscopic applications. Fabricated in a zero-change 45nm CMOS-SOI technology this Electronic-Photonic System on Chip (EPSoC), utilizes micro-ring resonators (MRRs) as ultrasound sensors instead of the traditional piezoelectric or capacitive micromachined transducers (PMUTs or CMUTs). The photonic nature of the sensor enables remoting the power-hungry receive electronics outside the probe tip, lowering the power dissipation inside the human body, eliminates the electrical cabling and reduces fiber count by 4x using wavelength division multiplexed (WDM) MRR sensors coupled onto the same waveguide. The photonic sensing element demonstrates >30 MHz bandwidth, and 7.3 mV/kPa sensitivity, while consuming 0.43 mW of power.
本文介绍了第一个完全集成的二维电子-光子超声传感器阵列,目标是用于内窥镜应用的低功耗小型化超声探头。该电子-光子片上系统(EPSoC)采用零变化45nm CMOS-SOI技术制造,利用微环谐振器(mrr)代替传统的压电或电容式微机械换能器(PMUTs或CMUTs)作为超声传感器。该传感器的光子特性使其能够将耗电的接收电子设备移至探头尖端之外,降低人体内部的功耗,消除了电缆,并使用耦合在同一波导上的波分复用(WDM) MRR传感器将光纤数量减少了4倍。该光子传感元件带宽>30 MHz,灵敏度为7.3 mV/kPa,功耗为0.43 mW。
{"title":"Fully Integrated Electronic-Photonic Ultrasound Receiver Array for Endoscopic Imaging Applications in a Zero-Change 45nm CMOS-SOI Process","authors":"P. Zarkos, S. Buchbinder, C. Adamopoulos, Sarika Madhvapathy, Olivia Hsu, J. Whinnery, Pavan Bhargava, V. Stojanović","doi":"10.23919/VLSICircuits52068.2021.9492412","DOIUrl":"https://doi.org/10.23919/VLSICircuits52068.2021.9492412","url":null,"abstract":"This paper presents the first fully integrated 2-D array of electronic-photonic ultrasound sensors targeting low-power miniaturized ultrasound probes for endoscopic applications. Fabricated in a zero-change 45nm CMOS-SOI technology this Electronic-Photonic System on Chip (EPSoC), utilizes micro-ring resonators (MRRs) as ultrasound sensors instead of the traditional piezoelectric or capacitive micromachined transducers (PMUTs or CMUTs). The photonic nature of the sensor enables remoting the power-hungry receive electronics outside the probe tip, lowering the power dissipation inside the human body, eliminates the electrical cabling and reduces fiber count by 4x using wavelength division multiplexed (WDM) MRR sensors coupled onto the same waveguide. The photonic sensing element demonstrates >30 MHz bandwidth, and 7.3 mV/kPa sensitivity, while consuming 0.43 mW of power.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131438542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
[VLSI Circuits 2021 Welcome] [VLSI电路2021欢迎]
Pub Date : 2021-06-13 DOI: 10.23919/vlsicircuits52068.2021.9492389
{"title":"[VLSI Circuits 2021 Welcome]","authors":"","doi":"10.23919/vlsicircuits52068.2021.9492389","DOIUrl":"https://doi.org/10.23919/vlsicircuits52068.2021.9492389","url":null,"abstract":"","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"347 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133424865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2021 Symposium on VLSI Circuits
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1