Pub Date : 2024-07-14DOI: 10.1016/j.cap.2024.07.006
Jimyoung Kim, Honyeon Lee
High-performance transparent quantum-dot light-emitting diodes (TQLEDs) are achieved through fine-tuning the top dielectric/metal/dielectric (DMD) anode structure. The transparent DMD electrodes are utilized as both the bottom cathode and top anode of TQLEDs. Employing WOx/Ag/WOx DMD anodes serves a dual purpose of transparency and hole injection, thereby streamlining the TQLED design. Investigation into the effects of the thicknesses of WOx and Ag layers on the device characteristics reveals an optimal configuration of 10-nm WOx/27-nm Ag/40-nm WOx for the DMD anode. The resulting TQLED exhibits a remarkable device light transmittance of 47 % at 530 nm. With maximum bottom and top emission current efficiencies of 34.0 and 9.42 cd/A, respectively, the total emission obtained by summing the bottom and top emissions reaches the maximum current efficiency of 41.8 cd/A, surpassing that of conventional opaque quantum-dot light-emitting diodes. This advancement underscores the successful fabrication of TQLEDs boasting higher efficiency alongside substantial light transmittance.
{"title":"Transparent CdSe/ZnS quantum-dot light-emitting diodes with WOx/Ag/WOx transparent electrodes achieving higher efficiency than opaque quantum-dot light-emitting diodes","authors":"Jimyoung Kim, Honyeon Lee","doi":"10.1016/j.cap.2024.07.006","DOIUrl":"10.1016/j.cap.2024.07.006","url":null,"abstract":"<div><p>High-performance transparent quantum-dot light-emitting diodes (TQLEDs) are achieved through fine-tuning the top dielectric/metal/dielectric (DMD) anode structure. The transparent DMD electrodes are utilized as both the bottom cathode and top anode of TQLEDs. Employing WO<sub>x</sub>/Ag/WO<sub>x</sub> DMD anodes serves a dual purpose of transparency and hole injection, thereby streamlining the TQLED design. Investigation into the effects of the thicknesses of WO<sub>x</sub> and Ag layers on the device characteristics reveals an optimal configuration of 10-nm WO<sub>x</sub>/27-nm Ag/40-nm WO<sub>x</sub> for the DMD anode. The resulting TQLED exhibits a remarkable device light transmittance of 47 % at 530 nm. With maximum bottom and top emission current efficiencies of 34.0 and 9.42 cd/A, respectively, the total emission obtained by summing the bottom and top emissions reaches the maximum current efficiency of 41.8 cd/A, surpassing that of conventional opaque quantum-dot light-emitting diodes. This advancement underscores the successful fabrication of TQLEDs boasting higher efficiency alongside substantial light transmittance.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 122-130"},"PeriodicalIF":2.4,"publicationDate":"2024-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141630537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1016/j.cap.2024.07.003
Mengqing Hu , Zheng Sun , Zhengjun Qiu , Le Zhao , Lijun Song , Qingchen Dong , Shihui Yu
Developing feasible Ag nanowire (NW) transparent conductive thin films (TCFs) with good conductivity, transparency, mechanical durability, strong adhesion, and high stability is a great challenge. Herein, novel TCFs composed of Ag NWs/Al2O3 on polyethylene terephthalate (PET) substrates with synchronously improved conductivity, transparency, mechanical durability, adhesion, and stability, are prepared. The corresponding values (before coating Al2O3: 13.0 Ω/sq. at 86.1 %, after coating Al2O3: 11.7 Ω/sq. at 87.7 %) indicate that the deposition of Al2O3 enhances the transparency and conductivity of Ag NW networks. Moreover, the resistance does not change significantly after 50 taping cycles and 2000 bending cycles with a bending radius of 5.0 mm, indicating the strong adhesion and good mechanical flexibility of Al2O3/Ag NWs composites. In addition, Al2O3/Ag NWs composites possess excellent stability to resist strong oxidizing, hot and humid environments. As a proof of concept, the flexible transparent heater prepared by Al2O3/Ag NWs composites is successfully demonstrated, verifying the practicability.
开发具有良好导电性、透明度、机械耐久性、强附着力和高稳定性的可行的银纳米线(NW)透明导电薄膜(TCFs)是一项巨大的挑战。本文在聚对苯二甲酸乙二醇酯(PET)基底上制备了由 Ag NWs/Al2O3 组成的新型 TCF,其导电性、透明度、机械耐久性、附着力和稳定性得到了同步改善。相应的数值(涂覆 Al2O3 前:13.0 Ω/sq.,86.1%;涂覆 Al2O3 后:11.7 Ω/sq.,87.7%)表明,Al2O3 的沉积提高了 Ag NW 网络的透明度和导电性。此外,在弯曲半径为 5.0 mm 的情况下,经过 50 次绑带循环和 2000 次弯曲循环后,电阻值没有明显变化,这表明 Al2O3/Ag NWs 复合材料具有很强的附着力和良好的机械柔韧性。此外,Al2O3/Ag NWs 复合材料还具有出色的稳定性,可抵御强氧化性、高温和潮湿环境。作为概念验证,成功演示了由 Al2O3/Ag NWs 复合材料制备的柔性透明加热器,验证了其实用性。
{"title":"Cohesively improved conductivity, transparency, and stability of Ag NW flexible transparent conductive thin films by covering Al2O3 layer","authors":"Mengqing Hu , Zheng Sun , Zhengjun Qiu , Le Zhao , Lijun Song , Qingchen Dong , Shihui Yu","doi":"10.1016/j.cap.2024.07.003","DOIUrl":"10.1016/j.cap.2024.07.003","url":null,"abstract":"<div><p>Developing feasible Ag nanowire (NW) transparent conductive thin films (TCFs) with good conductivity, transparency, mechanical durability, strong adhesion, and high stability is a great challenge. Herein, novel TCFs composed of Ag NWs/Al<sub>2</sub>O<sub>3</sub> on polyethylene terephthalate (PET) substrates with synchronously improved conductivity, transparency, mechanical durability, adhesion, and stability, are prepared. The corresponding values (before coating Al<sub>2</sub>O<sub>3</sub>: 13.0 Ω/sq. at 86.1 %, after coating Al<sub>2</sub>O<sub>3</sub>: 11.7 Ω/sq. at 87.7 %) indicate that the deposition of Al<sub>2</sub>O<sub>3</sub> enhances the transparency and conductivity of Ag NW networks. Moreover, the resistance does not change significantly after 50 taping cycles and 2000 bending cycles with a bending radius of 5.0 mm, indicating the strong adhesion and good mechanical flexibility of Al<sub>2</sub>O<sub>3</sub>/Ag NWs composites. In addition, Al<sub>2</sub>O<sub>3</sub>/Ag NWs composites possess excellent stability to resist strong oxidizing, hot and humid environments. As a proof of concept, the flexible transparent heater prepared by Al<sub>2</sub>O<sub>3</sub>/Ag NWs composites is successfully demonstrated, verifying the practicability.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 115-121"},"PeriodicalIF":2.4,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141630536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1016/j.cap.2024.07.004
Nahyun Kim, Jaewon Ahn, Moonseok Ko, Seungsun Choi, Wonsik Kim, Woojin Shin, Sehyun Jung, Hyesung Oh, Muntae Hwang, Mee-Yi Ryu, Hyunbok Lee
Solution-processable perovskite solar cells (PSCs) have the potential to revolutionize solar cell technology by enabling low power generation costs via low-cost device fabrication. However, most existing research regarding PSCs relies on the spin-coating method, which is not conducive to large-area film deposition. Therefore, the development of an alternative deposition method for perovskite films has become increasingly important for commercialization, for which electrospray deposition is a promising technique. This study investigates the two-step preparation of methylammonium lead triiodide (MAPbI3) perovskite films via the electrospray deposition of a methylammonium iodide (MAI) solution on a spin-coated PbI2 film. The gradual conversion of PbI2 to MAPbI3 with increasing MAI deposition time was revealed, accompanied by an increase in the size of the perovskite crystals. In addition, PSCs were successfully fabricated by electrospraying MAI, achieving a considerable power conversion efficiency of 7.86 % at the optimal MAI deposition time.
可溶液加工的过氧化物太阳能电池(PSCs)通过低成本的设备制造实现了低发电成本,从而有望彻底改变太阳能电池技术。然而,现有的大多数有关 PSC 的研究都依赖于旋涂法,这种方法不利于大面积薄膜沉积。因此,开发一种可供选择的过氧化物薄膜沉积方法对于实现商业化越来越重要,而电喷雾沉积是一种很有前景的技术。本研究通过在旋涂 PbI2 薄膜上电喷雾沉积甲基碘化铵(MAI)溶液,分两步制备甲基碘化铵铅(MAPbI3)包晶石薄膜。结果表明,随着 MAI 沉积时间的增加,PbI2 逐渐转化为 MAPbI3,同时包晶晶体的尺寸也在增大。此外,通过电喷雾 MAI 成功制造出了 PSC,在最佳 MAI 沉积时间内实现了 7.86% 的可观功率转换效率。
{"title":"Two-step preparation of methylammonium lead triiodide perovskite film via electrospray deposition of methylammonium iodide solution for solar cell applications","authors":"Nahyun Kim, Jaewon Ahn, Moonseok Ko, Seungsun Choi, Wonsik Kim, Woojin Shin, Sehyun Jung, Hyesung Oh, Muntae Hwang, Mee-Yi Ryu, Hyunbok Lee","doi":"10.1016/j.cap.2024.07.004","DOIUrl":"https://doi.org/10.1016/j.cap.2024.07.004","url":null,"abstract":"<div><p>Solution-processable perovskite solar cells (PSCs) have the potential to revolutionize solar cell technology by enabling low power generation costs via low-cost device fabrication. However, most existing research regarding PSCs relies on the spin-coating method, which is not conducive to large-area film deposition. Therefore, the development of an alternative deposition method for perovskite films has become increasingly important for commercialization, for which electrospray deposition is a promising technique. This study investigates the two-step preparation of methylammonium lead triiodide (MAPbI<sub>3</sub>) perovskite films via the electrospray deposition of a methylammonium iodide (MAI) solution on a spin-coated PbI<sub>2</sub> film. The gradual conversion of PbI<sub>2</sub> to MAPbI<sub>3</sub> with increasing MAI deposition time was revealed, accompanied by an increase in the size of the perovskite crystals. In addition, PSCs were successfully fabricated by electrospraying MAI, achieving a considerable power conversion efficiency of 7.86 % at the optimal MAI deposition time.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 88-94"},"PeriodicalIF":2.4,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141606483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-05DOI: 10.1016/j.cap.2024.07.002
Qianwen Zhang, Wonje Jeong, Dae Joon Kang
The accuracy of modern scientific research and technological advancement is highly reliant on the ability to accurately measure weak signals. The lock-in amplifier (LIA) represents an indispensable instrument, skillfully extracting these faint signals from a backdrop of noise. As the pursuit of accuracy intensifies, LIA technology has been continuously adapted and optimized. This review offers a comprehensive analysis of the evolution and applications of LIAs in weak signal measurements. It presents a structured introduction to the historical development of LIAs and evaluates their diverse applications across various domains, including impedance, optical, electrochemical, thermal, and biosensing methods. By examining specific examples in each field, it showcases the significant impact of LIAs on enhancing measurement precision. The review concludes by highlighting persistent challenges encountered by LIAs in practical settings and explores potential avenues for their future advancement. Future research aims to address practical challenges, including further noise reduction, improved system stability, and ease of use, ensuring LIAs continue to play a pivotal role in scientific and technological progress.
现代科学研究和技术进步的准确性高度依赖于精确测量微弱信号的能力。锁定放大器(LIA)是一种不可或缺的仪器,它能巧妙地从噪声中提取微弱信号。随着对精确度的追求不断提高,LIA 技术也在不断调整和优化。本综述全面分析了 LIA 在微弱信号测量中的演变和应用。它有条理地介绍了 LIA 的历史发展,并评估了其在阻抗、光学、电化学、热学和生物传感方法等各个领域的不同应用。通过研究各个领域的具体实例,书中展示了 LIA 对提高测量精度的重大影响。综述最后强调了 LIAs 在实际应用中遇到的持续挑战,并探讨了其未来发展的潜在途径。未来研究的目标是解决实际挑战,包括进一步降低噪音、提高系统稳定性和易用性,确保 LIA 在科技进步中继续发挥关键作用。
{"title":"Lock-in amplifiers as a platform for weak signal measurements: Development and applications","authors":"Qianwen Zhang, Wonje Jeong, Dae Joon Kang","doi":"10.1016/j.cap.2024.07.002","DOIUrl":"https://doi.org/10.1016/j.cap.2024.07.002","url":null,"abstract":"<div><p>The accuracy of modern scientific research and technological advancement is highly reliant on the ability to accurately measure weak signals. The lock-in amplifier (LIA) represents an indispensable instrument, skillfully extracting these faint signals from a backdrop of noise. As the pursuit of accuracy intensifies, LIA technology has been continuously adapted and optimized. This review offers a comprehensive analysis of the evolution and applications of LIAs in weak signal measurements. It presents a structured introduction to the historical development of LIAs and evaluates their diverse applications across various domains, including impedance, optical, electrochemical, thermal, and biosensing methods. By examining specific examples in each field, it showcases the significant impact of LIAs on enhancing measurement precision. The review concludes by highlighting persistent challenges encountered by LIAs in practical settings and explores potential avenues for their future advancement. Future research aims to address practical challenges, including further noise reduction, improved system stability, and ease of use, ensuring LIAs continue to play a pivotal role in scientific and technological progress.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 95-109"},"PeriodicalIF":2.4,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141606482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-03DOI: 10.1016/j.cap.2024.06.017
Tomoyuki Tachibana, Yuri Osaki, Ji Ha Lee, Akihiro Yabuki
In this study, we developed a simple and facile synthesis method for producing CuS films at low temperatures. The method uses self-reducible complex inks comprising copper formate (Cuf) as the copper source and thioacetamide (TA) as both the sulfur source and complexing agent. The thermal properties of complex inks with different TA/Cuf ratios (0.5–2.0) were analyzed. The ink with a TA/Cuf ratio of 1 exhibited a significant decrease in the reduction temperature. The synthesis of a CuS film involved calcination of the ink at 140 °C; however, some residual Cuf was observed. Introducing hexanol to the ink, aimed at prolonging the liquid-phase reaction, yielded a pure CuS film that contained agglomerated particles. The thermal reduction pathway of Cuf to CuS was analyzed through thermogravimetric–mass spectrometric analysis, and the results revealed that the low-temperature synthesis was attributed to the formation of acetonitrile and formic acid during thermal decomposition of the ink.
{"title":"Simple and facile synthesis of a CuS film using a copper formate–thioacetamide complex ink","authors":"Tomoyuki Tachibana, Yuri Osaki, Ji Ha Lee, Akihiro Yabuki","doi":"10.1016/j.cap.2024.06.017","DOIUrl":"10.1016/j.cap.2024.06.017","url":null,"abstract":"<div><p>In this study, we developed a simple and facile synthesis method for producing CuS films at low temperatures. The method uses self-reducible complex inks comprising copper formate (Cuf) as the copper source and thioacetamide (TA) as both the sulfur source and complexing agent. The thermal properties of complex inks with different TA/Cuf ratios (0.5–2.0) were analyzed. The ink with a TA/Cuf ratio of 1 exhibited a significant decrease in the reduction temperature. The synthesis of a CuS film involved calcination of the ink at 140 °C; however, some residual Cuf was observed. Introducing hexanol to the ink, aimed at prolonging the liquid-phase reaction, yielded a pure CuS film that contained agglomerated particles. The thermal reduction pathway of Cuf to CuS was analyzed through thermogravimetric–mass spectrometric analysis, and the results revealed that the low-temperature synthesis was attributed to the formation of acetonitrile and formic acid during thermal decomposition of the ink.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 81-87"},"PeriodicalIF":2.4,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141571798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1016/j.cap.2024.07.001
Jaejin Hwang , Yeongrok Jin , Jaekwang Lee
First-principles calculations on phonon dynamics using density functional theory (DFT) have proven powerful in estimating the phonon dispersion of crystalline structures. However, it remains a challenging task for defective structures due to the computational cost. The main computational bottleneck of the phonon calculation is obtaining the interatomic force constants in many supercells with different configurations of displacements. Here, we employed a machine learning-based force fields (MLFFs) to accelerate DFT calculations of interatomic force constants of Si-doped HfO2. We find that the specific phonon band originated from ferroelectric phase disappears, and imaginary modes are enhanced upon the introduction of a 10 % concentration of Si dopants, which is in good agreement with experimental results. This work demonstrates that MLFFs can be a promising application for predicting the phonon dispersion of both crystalline and defective structures.
{"title":"Machine learning force field based phonon dispersion prediction","authors":"Jaejin Hwang , Yeongrok Jin , Jaekwang Lee","doi":"10.1016/j.cap.2024.07.001","DOIUrl":"https://doi.org/10.1016/j.cap.2024.07.001","url":null,"abstract":"<div><p>First-principles calculations on phonon dynamics using density functional theory (DFT) have proven powerful in estimating the phonon dispersion of crystalline structures. However, it remains a challenging task for defective structures due to the computational cost. The main computational bottleneck of the phonon calculation is obtaining the interatomic force constants in many supercells with different configurations of displacements. Here, we employed a machine learning-based force fields (MLFFs) to accelerate DFT calculations of interatomic force constants of Si-doped HfO<sub>2</sub>. We find that the specific phonon band originated from ferroelectric phase disappears, and imaginary modes are enhanced upon the introduction of a 10 % concentration of Si dopants, which is in good agreement with experimental results. This work demonstrates that MLFFs can be a promising application for predicting the phonon dispersion of both crystalline and defective structures.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 76-80"},"PeriodicalIF":2.4,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141543573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-29DOI: 10.1016/j.cap.2024.06.016
Hyewon Shim , Jun-Ho Park , Shinyoung Choi, Cheol-Joo Kim
Spin-coating stands out as one of the fastest and simplest processes for material solidification. While it is commonly employed for producing polycrystalline thin films, recent endeavors have explored its potential for epitaxial growth, albeit primarily limited to inorganic materials. In this study, we demonstrate the spin-coating method enabling the rapid growth of large-sized organic single crystals (OSCs). Within 2 h, we successfully obtained OSCs with controlled lateral sizes of up to 2 mm, which conventionally takes several weeks using slow solvent evaporation. Raman mapping and UV–Vis absorption measurements confirmed the growths of the OSCs. We propose the growth mechanism by using the supersaturated dynamic fluid model. Furthermore, we demonstrate the device integration of these OSCs for charge-transfer complex channel, revealing ambipolar behavior during gate sweep. This innovative OSCs production method has the potential to advance the various field of science and electronics, traditionally hindered by the scarcity of adequately sized OSCs.
{"title":"Fast growth of large-sized organic single crystals via spin coating","authors":"Hyewon Shim , Jun-Ho Park , Shinyoung Choi, Cheol-Joo Kim","doi":"10.1016/j.cap.2024.06.016","DOIUrl":"https://doi.org/10.1016/j.cap.2024.06.016","url":null,"abstract":"<div><p>Spin-coating stands out as one of the fastest and simplest processes for material solidification. While it is commonly employed for producing polycrystalline thin films, recent endeavors have explored its potential for epitaxial growth, albeit primarily limited to inorganic materials. In this study, we demonstrate the spin-coating method enabling the rapid growth of large-sized organic single crystals (OSCs). Within 2 h, we successfully obtained OSCs with controlled lateral sizes of up to 2 mm, which conventionally takes several weeks using slow solvent evaporation. Raman mapping and UV–Vis absorption measurements confirmed the growths of the OSCs. We propose the growth mechanism by using the supersaturated dynamic fluid model. Furthermore, we demonstrate the device integration of these OSCs for charge-transfer complex channel, revealing ambipolar behavior during gate sweep. This innovative OSCs production method has the potential to advance the various field of science and electronics, traditionally hindered by the scarcity of adequately sized OSCs.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 60-65"},"PeriodicalIF":2.4,"publicationDate":"2024-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141486114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1016/j.cap.2024.06.015
A. Shahriyari , Z. GolshanBafghi , M. Yousefizad , N. Manavizadeh , H. Pourfarzad , F. Ahaninpajooh , S. Samoodi
Herein, the rotary triboelectric nanogenerator (R-TENG) with a modified structure is simulated and fabricated to investigate the effect of changes on the geometric structure experimentally. The R-TENGs were fabricated using cost-effective and easily accessible dry-film lithography based on the PCB approach. This process which is explained step-by-step in detail in this paper, provides uniform electrode layers without using high-tech instruments, resulting in enhanced fabrication speed and electrical performance. R-TENGs with varying electrode and PTFE sector counts (32/16, 16/8, and 8/4) were fabricated and analyzed. At 1000 rpm, the output power of R-TENGs with 8, 16, and 32 electrodes demonstrated escalating output power with increasing electrode numbers: 6.82, 19.52, and 30.64 Wm-2, respectively. Simulation results corroborated the experimental findings, confirming that more electrodes and freestanding sectors yield superior power density and electrical generation. The 32-electrode, 16-sector R-TENG outperformed its counterparts, suggesting that strategic design alterations can significantly optimize energy harvesting in R-TENGs.
{"title":"Enhancing energy harvesting for low-power electronics: A study on the impact of electrode number and freestanding layer in rotary triboelectric nanogenerator","authors":"A. Shahriyari , Z. GolshanBafghi , M. Yousefizad , N. Manavizadeh , H. Pourfarzad , F. Ahaninpajooh , S. Samoodi","doi":"10.1016/j.cap.2024.06.015","DOIUrl":"https://doi.org/10.1016/j.cap.2024.06.015","url":null,"abstract":"<div><p>Herein, the rotary triboelectric nanogenerator (R-TENG) with a modified structure is simulated and fabricated to investigate the effect of changes on the geometric structure experimentally. The R-TENGs were fabricated using cost-effective and easily accessible dry-film lithography based on the PCB approach. This process which is explained step-by-step in detail in this paper, provides uniform electrode layers without using high-tech instruments, resulting in enhanced fabrication speed and electrical performance. R-TENGs with varying electrode and PTFE sector counts (32/16, 16/8, and 8/4) were fabricated and analyzed. At 1000 rpm, the output power of R-TENGs with 8, 16, and 32 electrodes demonstrated escalating output power with increasing electrode numbers: 6.82, 19.52, and 30.64 Wm<sup>-2</sup>, respectively. Simulation results corroborated the experimental findings, confirming that more electrodes and freestanding sectors yield superior power density and electrical generation. The 32-electrode, 16-sector R-TENG outperformed its counterparts, suggesting that strategic design alterations can significantly optimize energy harvesting in R-TENGs.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 49-59"},"PeriodicalIF":2.4,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141486116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-25DOI: 10.1016/j.cap.2024.06.014
Alexey Yakubov , Petr Lazarenko , Elena Kirilenko , Irina Sagunova , Alexey Babich , Alexey Sherchenkov
Ge2Sb2Te5 (GST225) thin films are used as a functional element in multilayer cells of phase change random access memory (PCRAM, PCM) and have good prospects in electrically driven tunable reflective metasurfaces and on-chip waveguide devices, including those implemented on a flexible substrate. Knowledge of the mechanical properties of GST225 thin films, their adhesion to conductive layers, and the correct choice of conductive material is critical to the reliable operation of these devices. The present work focuses on the effect of phase change on mechanical parameters such as hardness, Young's modulus and stiffness, as well as on the adhesion of GST225 thin films to various metal sublayers (Al, Ti, TiN, W, Ni). The formation of GST225 films was carried out by vacuum thermal evaporation and DC magnetron sputtering, which made it possible to study layers with different distributions of elements over the thickness.
{"title":"Influence of phase state, conducting sublayer material and deposition method on mechanical properties and adhesion of Ge2Sb2Te5 thin films","authors":"Alexey Yakubov , Petr Lazarenko , Elena Kirilenko , Irina Sagunova , Alexey Babich , Alexey Sherchenkov","doi":"10.1016/j.cap.2024.06.014","DOIUrl":"https://doi.org/10.1016/j.cap.2024.06.014","url":null,"abstract":"<div><p>Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST225) thin films are used as a functional element in multilayer cells of phase change random access memory (PCRAM, PCM) and have good prospects in electrically driven tunable reflective metasurfaces and on-chip waveguide devices, including those implemented on a flexible substrate. Knowledge of the mechanical properties of GST225 thin films, their adhesion to conductive layers, and the correct choice of conductive material is critical to the reliable operation of these devices. The present work focuses on the effect of phase change on mechanical parameters such as hardness, Young's modulus and stiffness, as well as on the adhesion of GST225 thin films to various metal sublayers (Al, Ti, TiN, W, Ni). The formation of GST225 films was carried out by vacuum thermal evaporation and DC magnetron sputtering, which made it possible to study layers with different distributions of elements over the thickness.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"66 ","pages":"Pages 66-75"},"PeriodicalIF":2.4,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141486112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}