Pub Date : 2025-08-13DOI: 10.1016/j.cap.2025.08.008
S.E. García , M.A. Salguero Salas , D.M. Arciniegas Jaimes , M.I. Broens , S.M. Molina , E.A. Romero , O.E. Linarez Pérez , V.C. Fuertes , N. Bajales
Anodic materials provide a versatile platform for nanotechnological developments due to their customizable properties. Our work presents a cost-effective, user-friendly approach for fabricating high-quality anodic materials through hard anodization (HA), which is one of the most widely used techniques for efficiently fabricating anodic aluminum oxide (AAO) platforms in short times by applying high voltage. We developed a configurable power supply with a simple topology that can reach up to 190 V, which management was achieved by a basic processor board. In addition, we implemented a monitoring system for acquiring process anodization parameters. This approach significantly reduces the cost barrier associated with traditional methods, like induction-based power supplies. To demonstrate the effectiveness of our strategic experimental setup, we have successfully fabricated AAO templates to be used as substrates for surface-enhanced Raman spectroscopy (SERS). Thus, our low-cost modular friendly experimental setup offers a promising avenue for creating well-defined nanostructures with broad applications in nanotechnology.
{"title":"Budget-friendly nanofabrication: Porous structures from high voltage DC and chemical etching","authors":"S.E. García , M.A. Salguero Salas , D.M. Arciniegas Jaimes , M.I. Broens , S.M. Molina , E.A. Romero , O.E. Linarez Pérez , V.C. Fuertes , N. Bajales","doi":"10.1016/j.cap.2025.08.008","DOIUrl":"10.1016/j.cap.2025.08.008","url":null,"abstract":"<div><div>Anodic materials provide a versatile platform for nanotechnological developments due to their customizable properties. Our work presents a cost-effective, user-friendly approach for fabricating high-quality anodic materials through hard anodization (HA), which is one of the most widely used techniques for efficiently fabricating anodic aluminum oxide (AAO) platforms in short times by applying high voltage. We developed a configurable power supply with a simple topology that can reach up to 190 V, which management was achieved by a basic processor board. In addition, we implemented a monitoring system for acquiring process anodization parameters. This approach significantly reduces the cost barrier associated with traditional methods, like induction-based power supplies. To demonstrate the effectiveness of our strategic experimental setup, we have successfully fabricated AAO templates to be used as substrates for surface-enhanced Raman spectroscopy (SERS). Thus, our low-cost modular friendly experimental setup offers a promising avenue for creating well-defined nanostructures with broad applications in nanotechnology.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 104-111"},"PeriodicalIF":3.1,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144866548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-12DOI: 10.1016/j.cap.2025.08.005
Qianli Song , Yongjia Yang , Zao Yi , Hao Chen , Zigang Zhou , Hua Yang , Junqiao Wang , Boxun Li , Chaojun Tang , Fan Gao
In order to expand the application scenarios of terahertz(THz) devices, we have designed a THz multifunctional device consisting of an electrically tunable graphene metamaterial in the top layer, silicon dioxide in the middle layer, and vanadium dioxide (VO2), a phase change material, in the bottom layer. Particle Swarm Optimization (PSO) is used to optimize the structure of the multifunctional device. After several iterations, the ideal values of structural parameters were determined as h1 = 6.35 μm, w = 3.93 μm, R = 5.00 μm and L = 21.97 μm. The device is a graphene-dielectric-metal structure when vanadium dioxide is in the metallic state, and the absorbing layer is a graphene layer at this time. The simulation results show that the devices achieves 99.94 % and 99.98 % complete absorption at 3.805 THz and 4.15 THz, with Q values of 37.04 and 36.09, respectively, and is highly sensitive to the environmental refractive index, with a sensing sensitivity as high as 1210 GHz/RIU. When vanadium dioxide is in the insulating state, the device realizes the plasmon-induced transparency effect and has excellent slow light performance, and the group delay is 30.71 ps. In a word, the design of this paper will provide more ideas for the research of new devices such as terahertz detectors, terahertz astronomical observation equipment and THz spectrometers.
为了拓展太赫兹（THz）器件的应用场景，我们设计了一种由顶层可电调谐石墨烯超材料、中间层二氧化硅、底层相变材料二氧化钒（VO2）组成的太赫兹（THz）多功能器件。采用粒子群算法（PSO）对多功能器件进行结构优化。经过多次迭代，确定了结构参数的理想值：h1 = 6.35 μm, w = 3.93 μm, R = 5.00 μm, L = 21.97 μm。该器件在二氧化钒处于金属态时为石墨烯-介电-金属结构，此时吸收层为石墨烯层。仿真结果表明，该器件在3.805 THz和4.15 THz下完全吸收率分别为99.94%和99.98%，Q值分别为37.04和36.09，对环境折射率非常敏感，传感灵敏度高达1210 GHz/RIU。当二氧化钒处于绝缘状态时，器件实现了等离子体诱导的透明效应，具有优异的慢光性能，群延迟为30.71 ps。本文的设计将为太赫兹探测器、太赫兹天文观测设备、太赫兹光谱仪等新型器件的研究提供更多思路。
{"title":"Multifunctional terahertz device optimized based on particle swarm optimization algorithm","authors":"Qianli Song , Yongjia Yang , Zao Yi , Hao Chen , Zigang Zhou , Hua Yang , Junqiao Wang , Boxun Li , Chaojun Tang , Fan Gao","doi":"10.1016/j.cap.2025.08.005","DOIUrl":"10.1016/j.cap.2025.08.005","url":null,"abstract":"<div><div>In order to expand the application scenarios of terahertz(THz) devices, we have designed a THz multifunctional device consisting of an electrically tunable graphene metamaterial in the top layer, silicon dioxide in the middle layer, and vanadium dioxide (VO<sub>2</sub>), a phase change material, in the bottom layer. Particle Swarm Optimization (PSO) is used to optimize the structure of the multifunctional device. After several iterations, the ideal values of structural parameters were determined as <em>h</em><sub><em>1</em></sub> = 6.35 μm, <em>w</em> = 3.93 μm, <em>R</em> = 5.00 μm and <em>L</em> = 21.97 μm. The device is a graphene-dielectric-metal structure when vanadium dioxide is in the metallic state, and the absorbing layer is a graphene layer at this time. The simulation results show that the devices achieves 99.94 % and 99.98 % complete absorption at 3.805 THz and 4.15 THz, with Q values of 37.04 and 36.09, respectively, and is highly sensitive to the environmental refractive index, with a sensing sensitivity as high as 1210 GHz/RIU. When vanadium dioxide is in the insulating state, the device realizes the plasmon-induced transparency effect and has excellent slow light performance, and the group delay is 30.71 ps. In a word, the design of this paper will provide more ideas for the research of new devices such as terahertz detectors, terahertz astronomical observation equipment and THz spectrometers.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 88-95"},"PeriodicalIF":3.1,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144852765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-08DOI: 10.1016/j.cap.2025.08.001
Moonil Jung , Jeeeun Yang , Dong-Jin Yun , Sung Heo , Sangwook Kim , Byoungdeog Choi
In this study, we systematically investigate the threshold voltage (Vth) shift mechanism in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors subjected to varying fluorine (F) implantation doses. Fluorine was implanted into a-IGZO at a dose of 1 × 1020 cm−3 with an implantation energy of 30 keV, resulting in a negative Vth shift compared to undoped samples. In contrast, higher doping concentrations (5 × 1020 and 1 × 1021 cm−3) induced positive Vth shifts.
To elucidate this mechanism, we conducted Current Transient Spectroscopy (CTS), X-ray Photoelectron Spectroscopy (XPS), and Reflection Electron Energy Loss Spectroscopy (REELS). The results indicate that moderate F doping shifts the Fermi level closer to the conduction band, causing a negative Vth shift. However, at higher doping levels, shallow defect states (D1) emerge, facilitating the recombination of conduction band electrons into these states. This process reduces the on-current (Ion) and leads to a positive Vth shift.
Fluorine doping enhances device stability against negative bias temperature instability (NBTI), while positive bias temperature instability (PBTI) degrades increasingly with higher doping. While our experiments did not encompass the full range of doping concentrations required for simultaneous optimization of both, our results suggest that lower fluorine doses may offer a balanced approach. Through direct defect characterization, this study clarifies the critical role of such defects in the threshold voltage shift mechanism of oxide thin-film transistors, providing valuable guidance for reliability improvements.
在这项研究中，我们系统地研究了不同氟(F)注入剂量下非晶In- ga - zn - o （a-IGZO）薄膜晶体管的阈值电压（Vth）移位机制。将氟以1 × 1020 cm−3的剂量注入到a- igzo中，注入能量为30 keV，与未掺杂样品相比，产生负的v移。相比之下，较高的掺杂浓度（5 × 1020和1 × 1021 cm−3）诱导了正的Vth位移。为了阐明这一机制，我们使用了电流瞬态光谱（CTS）、x射线光电子能谱（XPS）和反射电子能量损失光谱（REELS）。结果表明，适度的F掺杂使费米能级更靠近导带，造成负的Vth位移。然而，在较高的掺杂水平下，出现了浅缺陷态（D1），促进了导带电子在这些态中的重组。这一过程减少了导通电流（离子）并导致正的v值移位。氟掺杂增强了器件抗负偏置温度不稳定性（NBTI）的稳定性，而正偏置温度不稳定性（PBTI）随着掺杂量的增加而逐渐降低。虽然我们的实验没有涵盖同时优化两者所需的全部掺杂浓度，但我们的结果表明，较低的氟剂量可能提供一种平衡的方法。本研究通过直接缺陷表征，阐明了该类缺陷在氧化物薄膜晶体管阈值电压漂移机制中的关键作用，为提高可靠性提供了有价值的指导。
{"title":"Threshold shift mechanism in fluorine-doped indium-gallium-zinc-oxide thin film transistors via defect analysis","authors":"Moonil Jung , Jeeeun Yang , Dong-Jin Yun , Sung Heo , Sangwook Kim , Byoungdeog Choi","doi":"10.1016/j.cap.2025.08.001","DOIUrl":"10.1016/j.cap.2025.08.001","url":null,"abstract":"<div><div>In this study, we systematically investigate the threshold voltage (V<sub>th</sub>) shift mechanism in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors subjected to varying fluorine (F) implantation doses. Fluorine was implanted into a-IGZO at a dose of 1 × 10<sup>20</sup> cm<sup>−3</sup> with an implantation energy of 30 keV, resulting in a negative V<sub>th</sub> shift compared to undoped samples. In contrast, higher doping concentrations (5 × 10<sup>20</sup> and 1 × 10<sup>21</sup> cm<sup>−3</sup>) induced positive V<sub>th</sub> shifts.</div><div>To elucidate this mechanism, we conducted Current Transient Spectroscopy (CTS), X-ray Photoelectron Spectroscopy (XPS), and Reflection Electron Energy Loss Spectroscopy (REELS). The results indicate that moderate F doping shifts the Fermi level closer to the conduction band, causing a negative V<sub>th</sub> shift. However, at higher doping levels, shallow defect states (D1) emerge, facilitating the recombination of conduction band electrons into these states. This process reduces the on-current (I<sub>on</sub>) and leads to a positive V<sub>th</sub> shift.</div><div>Fluorine doping enhances device stability against negative bias temperature instability (NBTI), while positive bias temperature instability (PBTI) degrades increasingly with higher doping. While our experiments did not encompass the full range of doping concentrations required for simultaneous optimization of both, our results suggest that lower fluorine doses may offer a balanced approach. Through direct defect characterization, this study clarifies the critical role of such defects in the threshold voltage shift mechanism of oxide thin-film transistors, providing valuable guidance for reliability improvements.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 82-87"},"PeriodicalIF":3.1,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144842526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-06DOI: 10.1016/j.cap.2025.08.003
Seonghyeon Kim , Juheon Kim , Sanghyun Lee , Hyungmo Kim , Sangmin Lee
Conventional contact angle and hysteresis measurements often fail to distinguish structural differences between surfaces of the same material. In this study, a new analytical approach is designed to overcome these limitations. The proposed method involves observing the behavior of droplets upon their impact on the surface for different target material structures, thereby measuring the velocity of the droplet boundary during spreading (high Weber number and kinetic energy conditions) or receding (low Weber number and kinetic energy conditions). These velocity characteristics dynamically reflect structural influences, offering a highly sensitive approach for differentiating surfaces based on their structure. We anticipate that this method, which provides a reliable and effective way for characterizing surface structures in various applications, will be widely adopted in research and industry.
{"title":"Effective method for measuring structural influence through changes in droplet spreadability","authors":"Seonghyeon Kim , Juheon Kim , Sanghyun Lee , Hyungmo Kim , Sangmin Lee","doi":"10.1016/j.cap.2025.08.003","DOIUrl":"10.1016/j.cap.2025.08.003","url":null,"abstract":"<div><div>Conventional contact angle and hysteresis measurements often fail to distinguish structural differences between surfaces of the same material. In this study, a new analytical approach is designed to overcome these limitations. The proposed method involves observing the behavior of droplets upon their impact on the surface for different target material structures, thereby measuring the velocity of the droplet boundary during spreading (high Weber number and kinetic energy conditions) or receding (low Weber number and kinetic energy conditions). These velocity characteristics dynamically reflect structural influences, offering a highly sensitive approach for differentiating surfaces based on their structure. We anticipate that this method, which provides a reliable and effective way for characterizing surface structures in various applications, will be widely adopted in research and industry.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 77-81"},"PeriodicalIF":3.1,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-06DOI: 10.1016/j.cap.2025.08.002
Zeinab Rahimi , Amir Lohrasebi
This study uses molecular dynamics simulations to investigate the efficient separation of lithium (Li+) and sodium (Na+) ions in graphene-based nano-channels under the influence of an electric field. The effect of nano-channel dimensions, including length and width, on the ion separation performance was investigated. Our results show that nano-channels with a length of 12 nm and a width of 1.5 nm exhibit optimal ion separation at the present electric field intensity of 4 mV/Å, with lithium ions preferentially accumulating in the designated storage compartments. This separation efficiency is primarily due to the mass-dependent electrophoretic mobility of the ions, with lithium ions migrating faster than sodium ions in the same electric field due to their lower mass and higher acceleration. In addition, the narrow channel width provides a more controlled laminar flow, minimizing turbulence and improving ion transport selectivity. This study also highlights the role of thermal effects, ion diffusion, and electrostatic interactions with the graphene surface in improving the separation process.
{"title":"Application of external electric fields for Li+/Na+ ions separation in a graphene-based nano-channel: a computational study","authors":"Zeinab Rahimi , Amir Lohrasebi","doi":"10.1016/j.cap.2025.08.002","DOIUrl":"10.1016/j.cap.2025.08.002","url":null,"abstract":"<div><div>This study uses molecular dynamics simulations to investigate the efficient separation of lithium (Li<sup>+</sup>) and sodium (Na<sup>+</sup>) ions in graphene-based nano-channels under the influence of an electric field. The effect of nano-channel dimensions, including length and width, on the ion separation performance was investigated. Our results show that nano-channels with a length of 12 nm and a width of 1.5 nm exhibit optimal ion separation at the present electric field intensity of 4 mV/Å, with lithium ions preferentially accumulating in the designated storage compartments. This separation efficiency is primarily due to the mass-dependent electrophoretic mobility of the ions, with lithium ions migrating faster than sodium ions in the same electric field due to their lower mass and higher acceleration. In addition, the narrow channel width provides a more controlled laminar flow, minimizing turbulence and improving ion transport selectivity. This study also highlights the role of thermal effects, ion diffusion, and electrostatic interactions with the graphene surface in improving the separation process.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 66-76"},"PeriodicalIF":3.1,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-31DOI: 10.1016/j.cap.2025.07.011
Suejeong You , Heesang Kim , Nammee Kim
Strain engineering in Janus transition metal dichalcogenides (TMDCs) is a powerful approach for tuning electronic, optical, and mechanical properties. Using first-principles calculations, we explore the anisotropic effects of uniaxial and biaxial strains on the Janus TMDCs. Our results reveal that biaxial strain induces symmetric modifications, leading to uniform changes in the lattice constants and electronic band structures. However, uniaxial strain introduces anisotropy, with the structural and electronic responses depending on the strain direction. Under small uniaxial strain (8%), results in minimal differences between the zigzag and armchair directions, a higher strain (12%) leads to remarkable anisotropic effects. In this regime, the band structure and density of states (DOS) exhibit distinct variations along the two principal crystallographic directions, highlighting the directional dependence of strain-induced modifications. These findings provide insights into strain-induced anisotropy in Janus TMDCs and offer guidance for their application in nanoelectronic and optoelectronic devices.
{"title":"Strain-induced anisotropic effects on the electronic properties and dipole moment differences of Janus WSeTe","authors":"Suejeong You , Heesang Kim , Nammee Kim","doi":"10.1016/j.cap.2025.07.011","DOIUrl":"10.1016/j.cap.2025.07.011","url":null,"abstract":"<div><div>Strain engineering in Janus transition metal dichalcogenides (TMDCs) is a powerful approach for tuning electronic, optical, and mechanical properties. Using first-principles calculations, we explore the anisotropic effects of uniaxial and biaxial strains on the Janus TMDCs. Our results reveal that biaxial strain induces symmetric modifications, leading to uniform changes in the lattice constants and electronic band structures. However, uniaxial strain introduces anisotropy, with the structural and electronic responses depending on the strain direction. Under small uniaxial strain (8%), results in minimal differences between the zigzag and armchair directions, a higher strain (12%) leads to remarkable anisotropic effects. In this regime, the band structure and density of states (DOS) exhibit distinct variations along the two principal crystallographic directions, highlighting the directional dependence of strain-induced modifications. These findings provide insights into strain-induced anisotropy in Janus TMDCs and offer guidance for their application in nanoelectronic and optoelectronic devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 59-65"},"PeriodicalIF":3.1,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144770521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two-dimensional (2D) cesium lead halide perovskite CsPbBr3 nanoplatelets have received significant notice due to their potential applications in optoelectronics, photocatalysis, energy storage, and sensing. Energy and charge transfer from the nanoplatelet to a dye molecule provides an auxiliary possibility to control the properties of the perovskite-dye hybrid and the interaction of the singlet and triplet states. However, it remains poorly understood for the energy transfer mechanisms of singlets and triplets within hybrid systems. In this paper, the triplet energy transfer from CsPbBr3 nanoplatelets to surface-anchored Rhodamine B isothiocyanate (RITC) molecules is investigated by using the femtosecond time-resolved transient absorption spectroscopy. During the energy transfer, the hybrid experiences electron transfer from CsPbBr3 to RITC to form RITC−, hole transfer from CsPbBr3 to RITC− to form RITC triplets (3RITC∗). The results provide deep insights into the photogenerated carrier dynamics and a new way to tune the energy transfer in a perovskite-dye hybrid.
二维铯卤化铅钙钛矿CsPbBr3纳米薄片由于其在光电子学、光催化、储能和传感等方面的潜在应用而受到了广泛的关注。从纳米血小板到染料分子的能量和电荷转移为控制钙钛矿-染料杂化物的性质以及单线态和三重态的相互作用提供了辅助的可能性。然而，对于杂化系统中单重态和三重态的能量传递机制，人们仍然知之甚少。本文利用飞秒时间分辨瞬态吸收光谱研究了CsPbBr3纳米薄片向表面锚定的异硫氰酸罗丹明B （Rhodamine B isothiocyanate， RITC）分子的三重态能量转移。在能量转移过程中，杂化体经历了电子从CsPbBr3转移到RITC形成RITC−，空穴从CsPbBr3转移到RITC−形成RITC三重体（3RITC∗）。该结果为光生成载流子动力学提供了深刻的见解，并提供了一种调整钙钛矿-染料混合物中能量转移的新方法。
{"title":"Electron-mediated triplet energy transfer in CsPbBr3 nanoplatelet-Rhodamine interface","authors":"Chaochao Qin, Mingjun Zhao, Chaofan Fang, Jie Li, Minghuan Cui, Haiying Wang, Shuwen Zheng, Pan Song, Jian Song, Zhaoyong Jiao, Shuhong Ma, Jicai Zhang, Guangrui Jia, Yuhai Jiang, Zhongpo Zhou","doi":"10.1016/j.cap.2025.07.010","DOIUrl":"10.1016/j.cap.2025.07.010","url":null,"abstract":"<div><div>Two-dimensional (2D) cesium lead halide perovskite CsPbBr<sub>3</sub> nanoplatelets have received significant notice due to their potential applications in optoelectronics, photocatalysis, energy storage, and sensing. Energy and charge transfer from the nanoplatelet to a dye molecule provides an auxiliary possibility to control the properties of the perovskite-dye hybrid and the interaction of the singlet and triplet states. However, it remains poorly understood for the energy transfer mechanisms of singlets and triplets within hybrid systems. In this paper, the triplet energy transfer from CsPbBr<sub>3</sub> nanoplatelets to surface-anchored Rhodamine B isothiocyanate (RITC) molecules is investigated by using the femtosecond time-resolved transient absorption spectroscopy. During the energy transfer, the hybrid experiences electron transfer from CsPbBr<sub>3</sub> to RITC to form RITC<sup>−</sup>, hole transfer from CsPbBr<sub>3</sub> to RITC<sup>−</sup> to form RITC triplets (<sup>3</sup>RITC∗). The results provide deep insights into the photogenerated carrier dynamics and a new way to tune the energy transfer in a perovskite-dye hybrid.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 52-58"},"PeriodicalIF":2.4,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144711137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-17DOI: 10.1016/j.cap.2025.07.007
Sung Jun Park , Hyun Kyoung Yang
The spread of the covid-19 caused an increase in the consumption of disposable mask. Most of the used disposable masks are buried in the ground and incinerated. In case of the burial, disposable masks take longer than hundreds of years. In case of the incineration, a large amount of greenhouse gases generate. It affects global environmental pollution and human. Herein, we represent a method to synthesize carbon dots through recycling parts (non-woven, melt-blown, and non-woven/melt-blown) of disposable masks without mask residues. The prepared carbon dots have a size about 3.5–4.0 nm and blue region emission. As a result of fluorescence data, carbon dots mixed with Fe3+ ion display quenching effect due to several oxygen groups. Those interact coordination interaction with Fe3+ ions which affects possibility of nonradiative recombination, thus generating quenching effect of fluorescence. Thus, the recycled carbon dots can be applied to several fields (metal sensing and anti-counterfeiting).
{"title":"Luminescent sensing carbon dots by using different portions of disposable face mask for recycling without waste","authors":"Sung Jun Park , Hyun Kyoung Yang","doi":"10.1016/j.cap.2025.07.007","DOIUrl":"10.1016/j.cap.2025.07.007","url":null,"abstract":"<div><div>The spread of the covid-19 caused an increase in the consumption of disposable mask. Most of the used disposable masks are buried in the ground and incinerated. In case of the burial, disposable masks take longer than hundreds of years. In case of the incineration, a large amount of greenhouse gases generate. It affects global environmental pollution and human. Herein, we represent a method to synthesize carbon dots through recycling parts (non-woven, melt-blown, and non-woven/melt-blown) of disposable masks without mask residues. The prepared carbon dots have a size about 3.5–4.0 nm and blue region emission. As a result of fluorescence data, carbon dots mixed with Fe<sup>3+</sup> ion display quenching effect due to several oxygen groups. Those interact coordination interaction with Fe<sup>3+</sup> ions which affects possibility of nonradiative recombination, thus generating quenching effect of fluorescence. Thus, the recycled carbon dots can be applied to several fields (metal sensing and anti-counterfeiting).</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 43-51"},"PeriodicalIF":2.4,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144680772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-16DOI: 10.1016/j.cap.2025.07.009
Xiaoxue Zhao , Chao Jiang , Yanan Li , Mengzhou Yu , Jiqi Zheng , Tianming Lv , Yang Mu , Changgong Meng
Aqueous zinc ion batteries (ZIB) are gaining more attention due to their potential for sustainable energy storage solutions. However, the limited selection of appropriate anodic materials presents a significant obstacle to the widespread development of ZIB. To provide more options for anodic materials, constant efforts are necessary to develop anodes with high Zn2+ mobility and excellent reversibility. Herein, we fabricate La and O co-incorporated MoS2 nanosheets (denoted as La-O-MoS2) using a facile and universal strategy, which significantly enhances the specific capacity of MoS2. The La-O-MoS2 shows expanded interlayer spacing, and this extended interlayer channel plays a crucial role in the transportation of [Zn(H2O)6]2+. As a result, La-O-MoS2 achieves higher specific capacity compared to MoS2. The rare earth doping strategy is also capable of generating innovative materials with distinctive structures that can be used to various multivalent ion batteries.
{"title":"Lanthanum and oxygen incorporated MoS2 for advanced aqueous zinc ion batteries","authors":"Xiaoxue Zhao , Chao Jiang , Yanan Li , Mengzhou Yu , Jiqi Zheng , Tianming Lv , Yang Mu , Changgong Meng","doi":"10.1016/j.cap.2025.07.009","DOIUrl":"10.1016/j.cap.2025.07.009","url":null,"abstract":"<div><div>Aqueous zinc ion batteries (ZIB) are gaining more attention due to their potential for sustainable energy storage solutions. However, the limited selection of appropriate anodic materials presents a significant obstacle to the widespread development of ZIB. To provide more options for anodic materials, constant efforts are necessary to develop anodes with high Zn<sup>2+</sup> mobility and excellent reversibility. Herein, we fabricate La and O co-incorporated MoS<sub>2</sub> nanosheets (denoted as La-O-MoS<sub>2</sub>) using a facile and universal strategy, which significantly enhances the specific capacity of MoS<sub>2</sub>. The La-O-MoS<sub>2</sub> shows expanded interlayer spacing, and this extended interlayer channel plays a crucial role in the transportation of [Zn(H<sub>2</sub>O)<sub>6</sub>]<sup>2+</sup>. As a result, La-O-MoS<sub>2</sub> achieves higher specific capacity compared to MoS<sub>2</sub>. The rare earth doping strategy is also capable of generating innovative materials with distinctive structures that can be used to various multivalent ion batteries.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 22-28"},"PeriodicalIF":2.4,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144665496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-15DOI: 10.1016/j.cap.2025.07.008
Wei-Qi Huang , Zhong-Mei Huang , Yin-Lian Li , Shi-Rong Liu
The quantum phase change represents a transition to crystallizing quantum structure from amorphous silicon doped with impurities prepared in sputtering and depositing process by pulsed laser interaction, in which the silicon nanocrystals and the Yb-Er nanoalloy with direct bandgap are dramatic generated in irradiation process of laser or coherent electron beam, respectively. Here, the resonance among photon, electron and phonon occurs on surface with various impurities for quantum phase change, such as quantum dots crystallizing. It is demonstrated that the crystallizing process is faster and more stable while the plasmon energy produced by laser photon is near the phonon energy in annealing of laser irradiation, or while the energy of coherent electron is close to the phonon energy. Through quantum phase transition, the nanocrystals with various structures are observed in the TEM images, where the change characteristics in the low-dimensional quantum phase occur. It is interesting that the quantum phase change is obviously different in various impurities on surface of Si film, where the stronger condensing in crystallization doped with oxygen or erbium is measured. Under irradiation of coherent electron beam for suitable time, the nanostructure of Yb-Er alloy is observed on silicon, in which we find the new electron states near 0.93 eV for better emission at 1350 nm in the second communication window. And in the alloy of Yb-Er, the Er condensing and clustering are avoided in the crystallizing process for better emission near 1550 nm in the third optical communication window.
{"title":"Quantum phase-change materials on amorphous silicon film doped with impurities","authors":"Wei-Qi Huang , Zhong-Mei Huang , Yin-Lian Li , Shi-Rong Liu","doi":"10.1016/j.cap.2025.07.008","DOIUrl":"10.1016/j.cap.2025.07.008","url":null,"abstract":"<div><div>The quantum phase change represents a transition to crystallizing quantum structure from amorphous silicon doped with impurities prepared in sputtering and depositing process by pulsed laser interaction, in which the silicon nanocrystals and the Yb-Er nanoalloy with direct bandgap are dramatic generated in irradiation process of laser or coherent electron beam, respectively. Here, the resonance among photon, electron and phonon occurs on surface with various impurities for quantum phase change, such as quantum dots crystallizing. It is demonstrated that the crystallizing process is faster and more stable while the plasmon energy produced by laser photon is near the phonon energy in annealing of laser irradiation, or while the energy of coherent electron is close to the phonon energy. Through quantum phase transition, the nanocrystals with various structures are observed in the TEM images, where the change characteristics in the low-dimensional quantum phase occur. It is interesting that the quantum phase change is obviously different in various impurities on surface of Si film, where the stronger condensing in crystallization doped with oxygen or erbium is measured. Under irradiation of coherent electron beam for suitable time, the nanostructure of Yb-Er alloy is observed on silicon, in which we find the new electron states near 0.93 eV for better emission at 1350 nm in the second communication window. And in the alloy of Yb-Er, the Er condensing and clustering are avoided in the crystallizing process for better emission near 1550 nm in the third optical communication window.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 14-21"},"PeriodicalIF":2.4,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144665497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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