Pub Date : 2025-12-27DOI: 10.1016/j.cap.2025.12.017
Doyel Rakshit, Ajay Kumar Ghosh
We have investigated transport properties of polycrystalline YBa2Cu3O (YBCO) superconductors containing tin (Sn) nanoparticles in the intergranular region. The normal state resistivity of YBCO with 2.0 wt.% of Sn at 300 K increases 2.35 times in comparison to that of the pure YBCO. The addition of Sn nanoparticles at several weight percentages has significantly influenced the transport critical current density () in YBCO. Using the Ambegaokar-Halperin-Nelson-Siggia (AHNS) theory, we have extracted superfluid phase stiffness () as a function of temperature (). The variation of in relation to has also been examined within the vicinity of the phase transition region. Additionally, the behavior of has been discussed by considering the and flux pinning mechanisms.
{"title":"Variation of critical current density with superfluid phase stiffness in composite system of YBCO and Sn-nanoparticles","authors":"Doyel Rakshit, Ajay Kumar Ghosh","doi":"10.1016/j.cap.2025.12.017","DOIUrl":"10.1016/j.cap.2025.12.017","url":null,"abstract":"<div><div>We have investigated transport properties of polycrystalline YBa<sub>2</sub>Cu<sub>3</sub>O<span><math><msub><mspace></mspace><mrow><mn>7</mn><mo>−</mo><mi>δ</mi></mrow></msub></math></span> (YBCO) superconductors containing tin (Sn) nanoparticles in the intergranular region. The normal state resistivity of YBCO with 2.0 wt.% of Sn at 300 K increases 2.35 times in comparison to that of the pure YBCO. The addition of Sn nanoparticles at several weight percentages has significantly influenced the transport critical current density (<span><math><msub><mi>J</mi><mrow><mrow><mtext>c</mtext></mrow></mrow></msub></math></span>) in YBCO. Using the Ambegaokar-Halperin-Nelson-Siggia (AHNS) theory, we have extracted superfluid phase stiffness (<span><math><msub><mi>J</mi><mrow><mrow><mtext>s</mtext></mrow></mrow></msub></math></span>) as a function of temperature (<span><math><mi>T</mi></math></span>). The variation of <span><math><msub><mi>J</mi><mrow><mrow><mtext>c</mtext></mrow></mrow></msub><mo>(</mo><mi>T</mi><mo>)</mo></math></span> in relation to <span><math><msub><mi>J</mi><mrow><mrow><mtext>s</mtext></mrow></mrow></msub><mo>(</mo><mi>T</mi><mo>)</mo></math></span> has also been examined within the vicinity of the phase transition region. Additionally, the behavior of <span><math><msub><mi>J</mi><mrow><mrow><mtext>c</mtext></mrow></mrow></msub><mo>(</mo><mi>T</mi><mo>)</mo></math></span> has been discussed by considering the <span><math><mi>δ</mi><msub><mi>T</mi><mrow><mrow><mtext>c</mtext></mrow></mrow></msub></math></span> and <span><math><mi>δ</mi><mi>l</mi></math></span> flux pinning mechanisms.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 113-118"},"PeriodicalIF":3.1,"publicationDate":"2025-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145922352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-26DOI: 10.1016/j.cap.2025.12.011
T. Krishnapriya , Adon Jose , Arya Gopinath , Cyriac Joseph , P.R. Biju
A series of novel green light emitting NaKLa(1-x)NbO5: x Tb3+ (x = 0.00–0.10) phosphors with higher activator critical concentration were synthesized by solid state reaction method and its structural, morphological and luminescence properties have been investigated. Under 287 nm excitation, the titled phosphors exhibited a strong green emission. The addition of the Tb3+ concentration greatly improved the photoluminescent properties of the present phosphors without undergoing any quenching till the maximum concentration in the series (x = 0.10). The varying Tb3+concentrations did not have much influence on the CIE coordinates of the NaKLaNbO5 phosphors. This monotonous increase in intensity without much alterations in color properties is a desirable character for non-color tunable applications. The NaKLa(1-x)NbO5: x Tb3+ phosphors with strong green emission are expected to have wide applications in white light LEDs and non-tunable displays to compensate the green gap in the field of luminescent materials.
采用固相反应方法合成了一系列具有较高激活剂临界浓度的新型绿光发光体NaKLa(1-x)NbO5: x Tb3+ (x = 0.000 ~ 0.10)，并对其结构、形态和发光性能进行了研究。在287 nm激发下，标题荧光粉表现出较强的绿色发光。Tb3+浓度的加入大大改善了所述荧光粉的光致发光性能，而在该系列的最大浓度（x = 0.10）之前没有发生任何猝灭。不同的Tb3+浓度对NaKLaNbO5荧光粉的CIE坐标没有太大影响。这种单调的强度增加没有太多改变的颜色属性是一个理想的特性，非颜色可调的应用。具有强绿色发光特性的NaKLa(1-x)NbO5: x Tb3+荧光粉有望在白光led和不可调谐显示器中得到广泛应用，以弥补发光材料领域的绿色缺口。
{"title":"Luminescent properties of terbium doped NaKLaNbO5 phosphors for green light emitting applications","authors":"T. Krishnapriya , Adon Jose , Arya Gopinath , Cyriac Joseph , P.R. Biju","doi":"10.1016/j.cap.2025.12.011","DOIUrl":"10.1016/j.cap.2025.12.011","url":null,"abstract":"<div><div>A series of novel green light emitting NaKLa<sub>(1-x)</sub>NbO<sub>5</sub>: x Tb<sup>3+</sup> (x = 0.00–0.10) phosphors with higher activator critical concentration were synthesized by solid state reaction method and its structural, morphological and luminescence properties have been investigated. Under 287 nm excitation, the titled phosphors exhibited a strong green emission. The addition of the Tb<sup>3+</sup> concentration greatly improved the photoluminescent properties of the present phosphors without undergoing any quenching till the maximum concentration in the series (x = 0.10). The varying Tb<sup>3+</sup>concentrations did not have much influence on the CIE coordinates of the NaKLaNbO<sub>5</sub> phosphors. This monotonous increase in intensity without much alterations in color properties is a desirable character for non-color tunable applications. The NaKLa<sub>(1-x)</sub>NbO<sub>5</sub>: x Tb<sup>3+</sup> phosphors with strong green emission are expected to have wide applications in white light LEDs and non-tunable displays to compensate the green gap in the field of luminescent materials.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 62-67"},"PeriodicalIF":3.1,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145882054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The ferromagnetism in Cu doped Zinc oxide (ZnO) has been investigated and the possible origin of magnetism in the system has been discussed. The Cu doped ZnO has been successfully prepared by solid state reaction method. Magnetization measurement of these Cu doped ZnO samples show ferromagnetic behavior at room temperature. Room temperature Photoluminescence spectroscopy measurements shows defect related blue emission peak together with the UV emission. Employing positron annihilation spectroscopy all the Cu doped and undoped ZnO samples has been characterized. Positron annihilation lifetime results suggest no significant increase of cation defect in Cu doped ZnO.
{"title":"Preparation and characterization of ferromagnetic Cu doped ZnO","authors":"Mahuya Chakrabarti , Apurba Kumar Nayek , Bidyut Haldar , Sudipta Moshat , Dirtha Sanyal","doi":"10.1016/j.cap.2025.12.018","DOIUrl":"10.1016/j.cap.2025.12.018","url":null,"abstract":"<div><div>The ferromagnetism in Cu doped Zinc oxide (ZnO) has been investigated and the possible origin of magnetism in the system has been discussed. The Cu doped ZnO has been successfully prepared by solid state reaction method. Magnetization measurement of these Cu doped ZnO samples show ferromagnetic behavior at room temperature. Room temperature Photoluminescence spectroscopy measurements shows defect related blue emission peak together with the UV emission. Employing positron annihilation spectroscopy all the Cu doped and undoped ZnO samples has been characterized. Positron annihilation lifetime results suggest no significant increase of cation defect in Cu doped ZnO.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 75-80"},"PeriodicalIF":3.1,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145922447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-26DOI: 10.1016/j.cap.2025.12.019
Eun-Ha Shin , Miyoung Kim
Introducing magnetism into a topological insulator can profoundly alter its electronic structure, leading to exotic phenomena. We present density-functional theory calculations on Gd substitution in the topological insulator Bi2Te3 surface. The surface state and energy gap are investigated as a function of Gd position, concentration, and magnetic ordering. A single Gd prefers to be near the surface, lifting the degeneracy of the topological surface state (TSS) and opening an energy gap. For Gd dimers, intra-quintuple-layer (intra-QL) dimers prefer antiferromagnetic (AFM) ordering due to the superexchange interaction, whereas inter-QL dimers reveal degenerate ferromagnetic and AFM ordering. The AFM intra-atomic-layer dimers retain the Dirac point of TSS, indicating preservation of time reversal symmetry, whereas other Gd dimers open the TSS gap. Our results imply that Gd doping sensitively tunes the electronic structure of topological insulators, depending on its distribution and magnetic coupling, providing a route to manipulate the TSS
{"title":"Structural and magnetic phase stability and the surface states of gd-doped topological insulator Bi2Te3","authors":"Eun-Ha Shin , Miyoung Kim","doi":"10.1016/j.cap.2025.12.019","DOIUrl":"10.1016/j.cap.2025.12.019","url":null,"abstract":"<div><div>Introducing magnetism into a topological insulator can profoundly alter its electronic structure, leading to exotic phenomena. We present density-functional theory calculations on Gd substitution in the topological insulator Bi<sub>2</sub>Te<sub>3</sub> surface. The surface state and energy gap are investigated as a function of Gd position, concentration, and magnetic ordering. A single Gd prefers to be near the surface, lifting the degeneracy of the topological surface state (TSS) and opening an energy gap. For Gd dimers, intra-quintuple-layer (intra-QL) dimers prefer antiferromagnetic (AFM) ordering due to the superexchange interaction, whereas inter-QL dimers reveal degenerate ferromagnetic and AFM ordering. The AFM intra-atomic-layer dimers retain the Dirac point of TSS, indicating preservation of time reversal symmetry, whereas other Gd dimers open the TSS gap. Our results imply that Gd doping sensitively tunes the electronic structure of topological insulators, depending on its distribution and magnetic coupling, providing a route to manipulate the TSS</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 46-52"},"PeriodicalIF":3.1,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145882052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-24DOI: 10.1016/j.cap.2025.12.016
Garam Bae , Dohyung Lee , Wooseok Song
Broadband photodetection of two-dimensional (2D) semiconductors is often hampered by their narrow absorption bandwidth and limited sensitivity to short-wavelength photons. In this work, we propose an effective spectral engineering strategy by integrating red-emissive CsPbBrI2 perovskite quantum dots (PQDs) with SnSe layer-based photodetectors. The PQD film functions as a photon down-conversion medium, absorbing ultraviolet (UV) and blue photons and re-emits them at ∼625 nm, near the absorption edge of SnSe. This photon down-conversion significantly enhances the photocurrent response of the hybrid device across the ultraviolet–visible–near-infrared spectrum. Time-resolved photocurrent measurements reveal up to an order-of-magnitude improvement in photoresponse compared to pristine SnSe, particularly under UV excitation. Spectroscopic and morphological analyses confirm the structural integrity and optical activity of the CsPbBrI2 PQD layer, as well as its conformal coverage on the SnSe surface. Furthermore, optimization of PQD coating thickness indicates that a single spin-coating cycle yields the best performance by balancing PL efficiency and photon penetration. The hybrid photodetectors also exhibit stable ON/OFF switching characteristics across all excitation wavelengths. These results establish a versatile and non-invasive approach for extending the spectral sensitivity of 2D semiconductors using photonic down-conversion layers, offering promising opportunities for next-generation broadband optoelectronic devices.
{"title":"Red-emissive perovskite quantum dot-induced monochromatization for broadband photodetection in two-dimensional SnSe","authors":"Garam Bae , Dohyung Lee , Wooseok Song","doi":"10.1016/j.cap.2025.12.016","DOIUrl":"10.1016/j.cap.2025.12.016","url":null,"abstract":"<div><div>Broadband photodetection of two-dimensional (2D) semiconductors is often hampered by their narrow absorption bandwidth and limited sensitivity to short-wavelength photons. In this work, we propose an effective spectral engineering strategy by integrating red-emissive CsPbBrI<sub>2</sub> perovskite quantum dots (PQDs) with SnSe layer-based photodetectors. The PQD film functions as a photon down-conversion medium, absorbing ultraviolet (UV) and blue photons and re-emits them at ∼625 nm, near the absorption edge of SnSe. This photon down-conversion significantly enhances the photocurrent response of the hybrid device across the ultraviolet–visible–near-infrared spectrum. Time-resolved photocurrent measurements reveal up to an order-of-magnitude improvement in photoresponse compared to pristine SnSe, particularly under UV excitation. Spectroscopic and morphological analyses confirm the structural integrity and optical activity of the CsPbBrI<sub>2</sub> PQD layer, as well as its conformal coverage on the SnSe surface. Furthermore, optimization of PQD coating thickness indicates that a single spin-coating cycle yields the best performance by balancing PL efficiency and photon penetration. The hybrid photodetectors also exhibit stable ON/OFF switching characteristics across all excitation wavelengths. These results establish a versatile and non-invasive approach for extending the spectral sensitivity of 2D semiconductors using photonic down-conversion layers, offering promising opportunities for next-generation broadband optoelectronic devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 31-37"},"PeriodicalIF":3.1,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145882055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-24DOI: 10.1016/j.cap.2025.12.015
Kwangsu Kim , Tae-Eon Park , Sanghoon Kim , Kyoung-Whan Kim
Two-dimensional (2D) materials are a promising class of materials due to their exotic properties, including flexibility, atomically thin layer, and tunability. While Hall measurements are widely used to investigate promising and conductive materials, 2D material devices often exhibit non-uniform current flows due to the difficulty of fabrication, particularly in bottom-contact or via-contact geometries, complicating quantitative analysis. Here, we demonstrate numerical simulation by incorporating non-diagonal terms in the conductivity tensor, enabling accurate estimation of Hall voltages under arbitrary device geometry. The simulation reproduces device resistance and Hall voltage in Hall bar geometry as a function of resistivity tensor, consistent with analytic solutions derived in another study. We estimate Hall voltages in two geometries—bottom-contact and via-contact— and demonstrate how much the device configuration can suppress the Hall voltage depending on the location of probes. This work provides an extendable framework for analyzing transport properties quantitatively in 2D materials and semiconductors.
{"title":"Quantitative analysis of Hall effect in two-dimensional materials","authors":"Kwangsu Kim , Tae-Eon Park , Sanghoon Kim , Kyoung-Whan Kim","doi":"10.1016/j.cap.2025.12.015","DOIUrl":"10.1016/j.cap.2025.12.015","url":null,"abstract":"<div><div>Two-dimensional (2D) materials are a promising class of materials due to their exotic properties, including flexibility, atomically thin layer, and tunability. While Hall measurements are widely used to investigate promising and conductive materials, 2D material devices often exhibit non-uniform current flows due to the difficulty of fabrication, particularly in bottom-contact or via-contact geometries, complicating quantitative analysis. Here, we demonstrate numerical simulation by incorporating non-diagonal terms in the conductivity tensor, enabling accurate estimation of Hall voltages under arbitrary device geometry. The simulation reproduces device resistance and Hall voltage in Hall bar geometry as a function of resistivity tensor, consistent with analytic solutions derived in another study. We estimate Hall voltages in two geometries—bottom-contact and via-contact— and demonstrate how much the device configuration can suppress the Hall voltage depending on the location of probes. This work provides an extendable framework for analyzing transport properties quantitatively in 2D materials and semiconductors.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 38-45"},"PeriodicalIF":3.1,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145881979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-23DOI: 10.1016/j.cap.2025.12.014
Dahee Jin , Jeongmin Koo , Yonghwan Kim , Woojoo Lee , Il Hwan Cho
Photodetectors (PDs) with high thermal stability are crucial for applications in extreme environments. This study analyzes the temperature-dependent characteristics of a Feedback Field-Effect Transistor (FBFET)-based photodetector within a temperature range of 300 K–450 K using TCAD simulations. The results show that the proposed PD maintains a low dark current and stable illumination current, ensuring excellent thermal stability. While responsivity increases due to thermally assisted tunneling, sensitivity declines with rising temperature. Structural optimizations, such as adjusting the light incident region and body thickness, further enhance performance. These findings provide valuable insights for the development of next-generation high-temperature PDs.
具有高热稳定性的光电探测器（pd）对于极端环境中的应用至关重要。本研究利用TCAD模拟分析了300 K - 450 K温度范围内基于反馈场效应晶体管（FBFET）的光电探测器的温度依赖特性。结果表明，该器件具有较低的暗电流和稳定的照明电流，具有良好的热稳定性。虽然响应度由于热辅助隧道而增加，但灵敏度随着温度的升高而下降。结构优化，如调整光入射区域和机身厚度，进一步提高了性能。这些发现为下一代高温pd的开发提供了有价值的见解。
{"title":"Analysis of temperature dependent characteristics of photodetector based on feedback field effect transistor","authors":"Dahee Jin , Jeongmin Koo , Yonghwan Kim , Woojoo Lee , Il Hwan Cho","doi":"10.1016/j.cap.2025.12.014","DOIUrl":"10.1016/j.cap.2025.12.014","url":null,"abstract":"<div><div>Photodetectors (PDs) with high thermal stability are crucial for applications in extreme environments. This study analyzes the temperature-dependent characteristics of a Feedback Field-Effect Transistor (FBFET)-based photodetector within a temperature range of 300 K–450 K using TCAD simulations. The results show that the proposed PD maintains a low dark current and stable illumination current, ensuring excellent thermal stability. While responsivity increases due to thermally assisted tunneling, sensitivity declines with rising temperature. Structural optimizations, such as adjusting the light incident region and body thickness, further enhance performance. These findings provide valuable insights for the development of next-generation high-temperature PDs.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 68-74"},"PeriodicalIF":3.1,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145882053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Surface-Enhanced Raman Scattering (SERS) is a powerful technique for ultrasensitive molecular detection; however, achieving both high sensitivity and reproducibility remains difficult with conventional plasmonic substrates. This work presents a novel plasmonic dual-silver–decorated dielectric nanoantenna array designed to overcome these limitations. Dielectric nanoantennas were first lithographically fabricated, followed by deposition of a thin silver base layer and a second layer of silver nanoparticles. This dual-silver architecture enables multiscale plasmonic coupling and generates dense electromagnetic hotspots, significantly enhancing local field intensities. Structural and optical analyses using SEM and UV–Vis spectroscopy confirmed uniform silver distribution and strong plasmonic activity. Using Rhodamine 6G as a probe, Raman measurements demonstrated excellent signal uniformity and enhancement factors exceeding 107. Finite-Difference Time-Domain simulations further verified strong near-field enhancement at the metal–dielectric interface. Owing to its high sensitivity, stability, and reproducibility, the proposed hybrid nanoantenna substrate is well suited for chemical, environmental, and biological sensing applications.
{"title":"Plasmonic dual-silver decorated dielectric nanoantenna arrays for enhanced surface-enhanced Raman scattering (SERS) sensors","authors":"Ravindra Pratap Singh , N. Nagabhooshanam , Yogendra Thakur , Deepak Nathiya , M.D Anto Praveena , U.L. Nagendra Kumar , A. Rajaram","doi":"10.1016/j.cap.2025.12.013","DOIUrl":"10.1016/j.cap.2025.12.013","url":null,"abstract":"<div><div>Surface-Enhanced Raman Scattering (SERS) is a powerful technique for ultrasensitive molecular detection; however, achieving both high sensitivity and reproducibility remains difficult with conventional plasmonic substrates. This work presents a novel plasmonic dual-silver–decorated dielectric nanoantenna array designed to overcome these limitations. Dielectric nanoantennas were first lithographically fabricated, followed by deposition of a thin silver base layer and a second layer of silver nanoparticles. This dual-silver architecture enables multiscale plasmonic coupling and generates dense electromagnetic hotspots, significantly enhancing local field intensities. Structural and optical analyses using SEM and UV–Vis spectroscopy confirmed uniform silver distribution and strong plasmonic activity. Using Rhodamine 6G as a probe, Raman measurements demonstrated excellent signal uniformity and enhancement factors exceeding 10<sup>7</sup>. Finite-Difference Time-Domain simulations further verified strong near-field enhancement at the metal–dielectric interface. Owing to its high sensitivity, stability, and reproducibility, the proposed hybrid nanoantenna substrate is well suited for chemical, environmental, and biological sensing applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 136-144"},"PeriodicalIF":3.1,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146023372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-22DOI: 10.1016/j.cap.2025.12.012
Rosenti Pasaribu , Andreas Setiawan , Rini Widyaningrum , Mitrayana
Visual assessment of burn wounds is subjective and often fails to detect hemoglobin-weighted vascular changes that mark phase transitions. We evaluated photoacoustic imaging (PAI) using relative hemoglobin (Hbrel), an internally normalized wound-to-healthy tissue comparison, to detect these transitions. Moist-thermal burns were induced ex vivo on Sprague-Dawley rat skin and imaged on days 1, 7, and 14 using a custom frequency-domain PAI system with an 808-nm diode laser and condenser microphone. Raster scanning with Fourier-transform-based signal extraction provided optimal contrast at a 15 kHz modulation frequency and a 50 % duty cycle. Hbrel values reached 162 % ± 10 % on day 1, declined to 142 % ± 10 % on day 7, and 111 % ± 2 % on day 14, reflecting reduced vasodilation and progressive healing. These findings demonstrate that PAI can differentiate healthy tissue from burn regions, highlighting its potential as an adjunct tool for monitoring burn wound recovery.
{"title":"Advancing burn wound monitoring: A non-invasive photoacoustic imaging approach","authors":"Rosenti Pasaribu , Andreas Setiawan , Rini Widyaningrum , Mitrayana","doi":"10.1016/j.cap.2025.12.012","DOIUrl":"10.1016/j.cap.2025.12.012","url":null,"abstract":"<div><div>Visual assessment of burn wounds is subjective and often fails to detect hemoglobin-weighted vascular changes that mark phase transitions. We evaluated photoacoustic imaging (PAI) using relative hemoglobin (Hb<sub>rel</sub>), an internally normalized wound-to-healthy tissue comparison, to detect these transitions. Moist-thermal burns were induced ex vivo on Sprague-Dawley rat skin and imaged on days 1, 7, and 14 using a custom frequency-domain PAI system with an 808-nm diode laser and condenser microphone. Raster scanning with Fourier-transform-based signal extraction provided optimal contrast at a 15 kHz modulation frequency and a 50 % duty cycle. Hb<sub>rel</sub> values reached 162 % ± 10 % on day 1, declined to 142 % ± 10 % on day 7, and 111 % ± 2 % on day 14, reflecting reduced vasodilation and progressive healing. These findings demonstrate that PAI can differentiate healthy tissue from burn regions, highlighting its potential as an adjunct tool for monitoring burn wound recovery.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 53-61"},"PeriodicalIF":3.1,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145882051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-18DOI: 10.1016/j.cap.2025.12.009
Won Uk Jeong , Jung Bin Ahn , Tae Jin Jeong , Yeonhee Ryu , Sung Kim
We report a systematic study of excitonic resonance and valley polarization in monolayer Mo1-xWxS2 alloys with compositions x = 0, 0.4, 0.6, and 1.0. Monolayers prepared by mechanical exfoliation were characterized by microscopy, Raman, and X-ray photoelectron spectroscopy. Unpolarized photoluminescence (PL) spectra show a progressive blueshift of the A-exciton peak with increasing W content, consistent with bandgap evolution. Circularly polarized PL measurements reveal valley-selective emission, with the degree of valley polarization (DVP) defined as DVP = (Ico − Icross)/(Ico + Icross). The DVP exhibits a maximum near the A-exciton resonance and increases from 3.0 % at x = 0–20.4 % at x = 1.0, accompanied by a blueshift in peak position. The enhancement is attributed to stronger spin–orbit coupling, reduced exciton–phonon scattering, and alloy-modulated relaxation. These findings demonstrate alloy composition as a practical tuning parameter for valley polarization in 2D semiconductors, offering guidance for valleytronic and chiroptical devices.
{"title":"Composition-tunable valley polarization in monolayer Mo1-xWxS2 alloys","authors":"Won Uk Jeong , Jung Bin Ahn , Tae Jin Jeong , Yeonhee Ryu , Sung Kim","doi":"10.1016/j.cap.2025.12.009","DOIUrl":"10.1016/j.cap.2025.12.009","url":null,"abstract":"<div><div>We report a systematic study of excitonic resonance and valley polarization in monolayer Mo<sub>1-x</sub>W<sub>x</sub>S<sub>2</sub> alloys with compositions x = 0, 0.4, 0.6, and 1.0. Monolayers prepared by mechanical exfoliation were characterized by microscopy, Raman, and X-ray photoelectron spectroscopy. Unpolarized photoluminescence (PL) spectra show a progressive blueshift of the A-exciton peak with increasing W content, consistent with bandgap evolution. Circularly polarized PL measurements reveal valley-selective emission, with the degree of valley polarization (DVP) defined as DVP = (I<sub>co</sub> − I<sub>cross</sub>)/(I<sub>co</sub> + I<sub>cross</sub>). The DVP exhibits a maximum near the A-exciton resonance and increases from 3.0 % at x = 0–20.4 % at x = 1.0, accompanied by a blueshift in peak position. The enhancement is attributed to stronger spin–orbit coupling, reduced exciton–phonon scattering, and alloy-modulated relaxation. These findings demonstrate alloy composition as a practical tuning parameter for valley polarization in 2D semiconductors, offering guidance for valleytronic and chiroptical devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 12-18"},"PeriodicalIF":3.1,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145838634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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