Pub Date : 2025-09-11DOI: 10.1016/j.cap.2025.09.009
Zhen Yang , Bingxu Liu , Zhuangzhi Li , Xi Han , Zilin Ye , Cici Jin
High quality Ruddlesden-Popper phase Srn+1TinO3n+1 (n = 1, 2, 3, ∞) thin films were epitaxially grown on LaAlO3 (001) single crystal substrates using pulsed laser deposition and then reduced in a gas mixture of H2 and Ar at 1473 K. Their conductivities and Seebeck coefficients were investigated by focusing on various transport mechanisms. At low temperatures, the conductivity results show that electron-electron interactions dominate electrical transport. At room temperature, both conductivity and Seebeck coefficient results indicate that conduction follows the small polaron model. At 300 K, the power factors for SrTiO3-δ, Sr4Ti3O10-δ and Sr3Ti2O7-δ reduced thin films reach 0.016, 0.017, and 0.006 mW/m⋅K2, respectively.
{"title":"Electrical transport and thermopower of reduced Ruddlesden-Popper phase Srn+1TinO3n+1-δ (n = 1, 2, 3, ∞) thin films","authors":"Zhen Yang , Bingxu Liu , Zhuangzhi Li , Xi Han , Zilin Ye , Cici Jin","doi":"10.1016/j.cap.2025.09.009","DOIUrl":"10.1016/j.cap.2025.09.009","url":null,"abstract":"<div><div>High quality Ruddlesden-Popper phase Sr<sub><em>n</em>+1</sub>Ti<sub><em>n</em></sub>O<sub>3<em>n</em>+1</sub> (<em>n</em> = 1, 2, 3, ∞) thin films were epitaxially grown on LaAlO<sub>3</sub> (001) single crystal substrates using pulsed laser deposition and then reduced in a gas mixture of H<sub>2</sub> and Ar at 1473 K. Their conductivities and Seebeck coefficients were investigated by focusing on various transport mechanisms. At low temperatures, the conductivity results show that electron-electron interactions dominate electrical transport. At room temperature, both conductivity and Seebeck coefficient results indicate that conduction follows the small polaron model. At 300 K, the power factors for SrTiO<sub>3-<em>δ</em></sub>, Sr<sub>4</sub>Ti<sub>3</sub>O<sub>10-<em>δ</em></sub> and Sr<sub>3</sub>Ti<sub>2</sub>O<sub>7-<em>δ</em></sub> reduced thin films reach 0.016, 0.017, and 0.006 mW/m⋅K<sup>2</sup>, respectively.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 128-133"},"PeriodicalIF":3.1,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145105113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-08DOI: 10.1016/j.cap.2025.09.006
Haidar K. Dhayef , Nisreen Ahmed Hamzah
Spray pyrolysis was employed to synthesize indium oxide nanostructures. The material was characterized using energy-dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), and X-ray diffraction (XRD). Thin films of indium oxide (In2O3) were produced by spray pyrolysis for gas sensing applications. The films were analyzed by XRD, FESEM, EDX, and UV–Vis spectroscopy. XRD analysis revealed a cubic polycrystalline structure with crystallite sizes ranging from 12 to 17 nm, while FESEM showed grass-like nanostructures with diameters between 40 and 70 nm. UV–Vis spectroscopy indicated an optical band gap of ∼3.27 eV. The gas sensor exhibited very high sensitivity to NO2 and H2S gases, with maximum sensitivities of 69.9 % and 32.25 %, respectively, at 300 °C. The device also demonstrated rapid response and recovery times, making it an ideal candidate for environmental gas detection.
{"title":"Optical and structural properties of indium oxide prepared by spray pyrolysis as a NO2 and H2S gas sensor","authors":"Haidar K. Dhayef , Nisreen Ahmed Hamzah","doi":"10.1016/j.cap.2025.09.006","DOIUrl":"10.1016/j.cap.2025.09.006","url":null,"abstract":"<div><div>Spray pyrolysis was employed to synthesize indium oxide nanostructures. The material was characterized using energy-dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), and X-ray diffraction (XRD). Thin films of indium oxide (In<sub>2</sub>O<sub>3</sub>) were produced by spray pyrolysis for gas sensing applications. The films were analyzed by XRD, FESEM, EDX, and UV–Vis spectroscopy. XRD analysis revealed a cubic polycrystalline structure with crystallite sizes ranging from 12 to 17 nm, while FESEM showed grass-like nanostructures with diameters between 40 and 70 nm. UV–Vis spectroscopy indicated an optical band gap of ∼3.27 eV. The gas sensor exhibited very high sensitivity to NO<sub>2</sub> and H<sub>2</sub>S gases, with maximum sensitivities of 69.9 % and 32.25 %, respectively, at 300 °C. The device also demonstrated rapid response and recovery times, making it an ideal candidate for environmental gas detection.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 122-127"},"PeriodicalIF":3.1,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-08DOI: 10.1016/j.cap.2025.09.004
Min Jung Choi , Jung Min Yun , Yu Bin Kim , Seunghwan Kim , Soohyung Park , Seong Jun Kang
To enhance the performance of quantum-dot light emitting diodes (QLEDs), we used an Nb2O5 interfacial layer as a buffer layer. The Nb2O5 layer is used as an n-type semiconductor with electron transport properties. In this study, a significant number of defect states resulting from the oxygen vacancies in the Nb2O5 layer were used to create gap states, bringing the valence band maximum (VBM) energy level closer to the Fermi level. This resulted in a lower injection barrier, facilitating efficient hole transport. However, charge imbalance occurs due to electron accumulation in the emission layer, resulting from the mobility difference between electrons and holes. This issue can be resolved by using the Nb2O5 interfacial layer, leading to a current efficiency of 10.1 cd/A, the luminance of 106,194 cd/m2, and the EQE of 2.4 %. This represents almost a two-fold performance improvement compared to QLEDs device without the Nb2O5 interfacial layer. These results demonstrate that the ITO/Nb2O5/V2O5/TFB/QDs/ZnO/Al structure of the device can enhance the performance of QLEDs by facilitating efficient hole transport through oxygen vacancies.
{"title":"Enhanced charge balance in QLEDs using oxygen vacancy induced defect states in Nb2O5 interfacial layer","authors":"Min Jung Choi , Jung Min Yun , Yu Bin Kim , Seunghwan Kim , Soohyung Park , Seong Jun Kang","doi":"10.1016/j.cap.2025.09.004","DOIUrl":"10.1016/j.cap.2025.09.004","url":null,"abstract":"<div><div>To enhance the performance of quantum-dot light emitting diodes (QLEDs), we used an Nb<sub>2</sub>O<sub>5</sub> interfacial layer as a buffer layer. The Nb<sub>2</sub>O<sub>5</sub> layer is used as an n-type semiconductor with electron transport properties. In this study, a significant number of defect states resulting from the oxygen vacancies in the Nb<sub>2</sub>O<sub>5</sub> layer were used to create gap states, bringing the valence band maximum (VBM) energy level closer to the Fermi level. This resulted in a lower injection barrier, facilitating efficient hole transport. However, charge imbalance occurs due to electron accumulation in the emission layer, resulting from the mobility difference between electrons and holes. This issue can be resolved by using the Nb<sub>2</sub>O<sub>5</sub> interfacial layer, leading to a current efficiency of 10.1 cd/A, the luminance of 106,194 cd/m<sup>2</sup>, and the EQE of 2.4 %. This represents almost a two-fold performance improvement compared to QLEDs device without the Nb<sub>2</sub>O<sub>5</sub> interfacial layer. These results demonstrate that the ITO/Nb<sub>2</sub>O<sub>5</sub>/V<sub>2</sub>O<sub>5</sub>/TFB/QDs/ZnO/Al structure of the device can enhance the performance of QLEDs by facilitating efficient hole transport through oxygen vacancies.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 64-71"},"PeriodicalIF":3.1,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-06DOI: 10.1016/j.cap.2025.09.003
S. Jellaj , S. Ouhaibi , L. Zahiri , N. Belouaggadia
The energy efficiency of buildings is a critical challenge in regions with harsh climates, where heating and cooling demands are steadily increasing. Among the most promising passive strategies, the integration of phase-change materials (PCMs) into building envelopes enables latent heat storage and release, thereby stabilizing indoor temperatures and reducing overall energy consumption. This study employs transient CFD simulations to propose and assess an innovative wall system incorporating two PCM layers arranged in parallel, specifically tailored to the semi-arid climate of Marrakesh. The novelty of this work lies in the simultaneous parametric analysis of three key design factors: PCM type, thickness, and spatial positioning within the wall. Results indicate that the PCM1 (29 °C) + PCM4 (16 °C) configuration delivers the best performance, reducing indoor temperature fluctuations by over 40 % and lowering annual energy demand by up to 24 % compared to a reference wall without PCMs. Temperature contour analyses revealed a more uniform thermal distribution, while viscosity field visualizations provided valuable insights into the progression of melting and solidification cycles. These findings underscore the strategic role of PCMs as an effective passive solution for enhancing energy efficiency and thermal comfort in hot, arid climates. The study establishes a reproducible and climate-responsive framework tailored to North African conditions, paving the way for the broader adoption of PCMs in sustainable building design.
{"title":"Phase change materials and building envelope: An innovative solution for energy transition","authors":"S. Jellaj , S. Ouhaibi , L. Zahiri , N. Belouaggadia","doi":"10.1016/j.cap.2025.09.003","DOIUrl":"10.1016/j.cap.2025.09.003","url":null,"abstract":"<div><div>The energy efficiency of buildings is a critical challenge in regions with harsh climates, where heating and cooling demands are steadily increasing. Among the most promising passive strategies, the integration of phase-change materials (PCMs) into building envelopes enables latent heat storage and release, thereby stabilizing indoor temperatures and reducing overall energy consumption. This study employs transient CFD simulations to propose and assess an innovative wall system incorporating two PCM layers arranged in parallel, specifically tailored to the semi-arid climate of Marrakesh. The novelty of this work lies in the simultaneous parametric analysis of three key design factors: PCM type, thickness, and spatial positioning within the wall. Results indicate that the PCM1 (29 °C) + PCM4 (16 °C) configuration delivers the best performance, reducing indoor temperature fluctuations by over 40 % and lowering annual energy demand by up to 24 % compared to a reference wall without PCMs. Temperature contour analyses revealed a more uniform thermal distribution, while viscosity field visualizations provided valuable insights into the progression of melting and solidification cycles. These findings underscore the strategic role of PCMs as an effective passive solution for enhancing energy efficiency and thermal comfort in hot, arid climates. The study establishes a reproducible and climate-responsive framework tailored to North African conditions, paving the way for the broader adoption of PCMs in sustainable building design.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 82-98"},"PeriodicalIF":3.1,"publicationDate":"2025-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cogging torque in flux-reversal machines (FRM) is relatively high compared with other types of stator active PM machines, due to their unique double salient topology. This research develops a hybrid novel skew with rotor pole pairing (SKCpp) method and analyses it using 2D finite element analysis (FEA), comparing its performance with two distinct excitation topologies, i.e., rare earth (RE-FRM) and ferrite (NRE) flux reversal machines (FRMs). The 3-phase, 6/8 pole FRM is modeled, and electromagnetic performances are compared with RE excited FRM (Machine A) and NRE excited FRM (Machine B), which have similar performance requirements for wind generator applications. These various excited machines are evaluated based on their power generation performance, demonstrating exceptional overload and speed capabilities through 2D FEA. The efficiency of Machine A is somewhat higher than that of Machine B, but cogging torque and torque ripples are at least 40 % higher than those of the former. It is found that the torque density of Machine B is only 54 % of that of Machine A, but by employing this structure, the cost saving is achieved by 47 %, since the machine is 1.8 times heavier. Further, the demagnetization risk analysis is performed up to 150 °C. At higher temperatures, Machine A is prone to deeper demagnetization risk, due to temperature susceptibility, which degrades the power factor and thereby limits the performance of the generator. Unlike Machine A and Machine B, which possess the minimum demagnetization risk, the occurrence is recorded below room temperature. Overall summary, it is found that the NRE excited proposed Machine B is the best alternative to the RE excited proposed Machine A for medium speed wind turbine generator applications.
{"title":"Performance evaluation of flux reversal machines with rare-earth and non-rare earth excitations for micro wind energy","authors":"Manne Bharathi , Obbu Chandra Sekhar , Suresh Lakhimsetty","doi":"10.1016/j.cap.2025.09.002","DOIUrl":"10.1016/j.cap.2025.09.002","url":null,"abstract":"<div><div>Cogging torque in flux-reversal machines (FRM) is relatively high compared with other types of stator active PM machines, due to their unique double salient topology. This research develops a hybrid novel skew with rotor pole pairing (SKCpp) method and analyses it using 2D finite element analysis (FEA), comparing its performance with two distinct excitation topologies, i.e., rare earth (RE-FRM) and ferrite (NRE) flux reversal machines (FRMs). The 3-phase, 6/8 pole FRM is modeled, and electromagnetic performances are compared with RE excited FRM (Machine A) and NRE excited FRM (Machine B), which have similar performance requirements for wind generator applications. These various excited machines are evaluated based on their power generation performance, demonstrating exceptional overload and speed capabilities through 2D FEA. The efficiency of Machine A is somewhat higher than that of Machine B, but cogging torque and torque ripples are at least 40 % higher than those of the former. It is found that the torque density of Machine B is only 54 % of that of Machine A, but by employing this structure, the cost saving is achieved by 47 %, since the machine is 1.8 times heavier. Further, the demagnetization risk analysis is performed up to 150 °C. At higher temperatures, Machine A is prone to deeper demagnetization risk, due to temperature susceptibility, which degrades the power factor and thereby limits the performance of the generator. Unlike Machine A and Machine B, which possess the minimum demagnetization risk, the occurrence is recorded below room temperature. Overall summary, it is found that the NRE excited proposed Machine B is the best alternative to the RE excited proposed Machine A for medium speed wind turbine generator applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 51-63"},"PeriodicalIF":3.1,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145019359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-03DOI: 10.1016/j.cap.2025.08.004
Hyunjin Ji
The effectiveness of bistriflimide (H-TFSI) treatment and its reaction mechanisms for improving device performance in MoS2 devices are investigated. The H-TFSI solution contains both H cations and TFSI anions, which interact with MoS2 device. In monolayer MoS2 FETs, H-TFSI reaction residues are adsorbed on the channel surface as p-doping agents and scattering centers, leading to performance degradation. In multilayer MoS2 FETs, the centroid of the channel charge is located near the gate oxide, allowing the impact of H+ ion reactions on device performance to be examined without the influence of surface-adsorbed H-TFSI residues. Electrical hysteresis analysis and low-frequency noise modeling were performed on two types of multilayer MoS2 devices with the same structure, which exhibited contrasting outcomes―performance enhancement and degradation―following H-TFSI treatment. Additionally, comprehensive analysis, including the electrical property changes after H+ insertion promotion and acetone rinsing, provides insights into the correlation between device performance variations and the underlying mechanisms.
{"title":"Precise analysis of electrical properties in MoS2 devices via H-TFSI ion reactions","authors":"Hyunjin Ji","doi":"10.1016/j.cap.2025.08.004","DOIUrl":"10.1016/j.cap.2025.08.004","url":null,"abstract":"<div><div>The effectiveness of bistriflimide (H-TFSI) treatment and its reaction mechanisms for improving device performance in MoS<sub>2</sub> devices are investigated. The H-TFSI solution contains both H cations and TFSI anions, which interact with MoS<sub>2</sub> device. In monolayer MoS<sub>2</sub> FETs, H-TFSI reaction residues are adsorbed on the channel surface as p-doping agents and scattering centers, leading to performance degradation. In multilayer MoS<sub>2</sub> FETs, the centroid of the channel charge is located near the gate oxide, allowing the impact of H<sup>+</sup> ion reactions on device performance to be examined without the influence of surface-adsorbed H-TFSI residues. Electrical hysteresis analysis and low-frequency noise modeling were performed on two types of multilayer MoS<sub>2</sub> devices with the same structure, which exhibited contrasting outcomes―performance enhancement and degradation―following H-TFSI treatment. Additionally, comprehensive analysis, including the electrical property changes after H<sup>+</sup> insertion promotion and acetone rinsing, provides insights into the correlation between device performance variations and the underlying mechanisms.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 99-107"},"PeriodicalIF":3.1,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-02DOI: 10.1016/j.cap.2025.09.001
Seok Jin Jang , Muhammad Quddamah Khokhar , Hasnain Yousuf , Alamgeer , Junhan Bae , Yeojin Jeong , Yunhui Jang , Youngkuk Kim , Sangheon Park , Woo Kyoung Kim , Junsin Yi
Silicon heterojunction (SHJ) solar cells have attracted significant interest due to their high efficiency and low temperature coefficient. Anti-reflective coating (ARC) is used to increase light absorption and short circuit current density (Jsc) of SHJ solar cell. Indium Tin Oixde (ITO) is commonly used ARC coating for SHJ solar cell because ITO has high conductivity and low resistance properties. To enhance the characteristics of the ARC, an additional transparent electrode with a lower refractive index than ITO was deposited. This increases the amount of light refracted into the solar cell, allowing for greater light absorption. This study focuses on enhancing the optical and electrical properties and Jsc by improving the ITO layer and ITO/SiOx double layer ARC on the solar cell. Since SiOx has low moisture stability and a refractive index is lower than 1.5, it is difficult to use it directly in solar cells. Therefore, NH3 plasma post-treatment was applied to develop an ARC suitable for solar cell applications. Using RF/DC power sputtering for ITO and plasma enhanced chemical vapor deposition (PECVD) for SiOx to make Double Layer of Antireflective coating (DLARC) and NH3 plasma treatment. This structure increased transmittance from 86.73 % to 89.6 % between 300 and 1100 nm spectrum. This resulted in a higher Jsc of 39.85 mA/cm2 and a conversion efficiency of 21.8 %. Both simulations and experiments demonstrated that ITO/SiOx DLARC with NH3 plasm post treatment structure offers superior anti-reflection properties compared to single-layer ITO coatings.
{"title":"Improvement of optoelectrical properties of silicon heterojunction solar cells by using ITO/SiOx DLARC with NH3 plasma treatment","authors":"Seok Jin Jang , Muhammad Quddamah Khokhar , Hasnain Yousuf , Alamgeer , Junhan Bae , Yeojin Jeong , Yunhui Jang , Youngkuk Kim , Sangheon Park , Woo Kyoung Kim , Junsin Yi","doi":"10.1016/j.cap.2025.09.001","DOIUrl":"10.1016/j.cap.2025.09.001","url":null,"abstract":"<div><div>Silicon heterojunction (SHJ) solar cells have attracted significant interest due to their high efficiency and low temperature coefficient. Anti-reflective coating (ARC) is used to increase light absorption and short circuit current density (<em>J</em><sub><em>sc</em></sub><em>)</em> of SHJ solar cell. Indium Tin Oixde (ITO) is commonly used ARC coating for SHJ solar cell because ITO has high conductivity and low resistance properties. To enhance the characteristics of the ARC, an additional transparent electrode with a lower refractive index than ITO was deposited. This increases the amount of light refracted into the solar cell, allowing for greater light absorption. This study focuses on enhancing the optical and electrical properties and J<sub>sc</sub> by improving the ITO layer and ITO/SiO<sub>x</sub> double layer ARC on the solar cell. Since SiO<sub>x</sub> has low moisture stability and a refractive index is lower than 1.5, it is difficult to use it directly in solar cells. Therefore, NH<sub>3</sub> plasma post-treatment was applied to develop an ARC suitable for solar cell applications. Using RF/DC power sputtering for ITO and plasma enhanced chemical vapor deposition (PECVD) for SiO<sub>x</sub> to make Double Layer of Antireflective coating (DLARC) and NH<sub>3</sub> plasma treatment. This structure increased transmittance from 86.73 % to 89.6 % between 300 and 1100 nm spectrum. This resulted in a higher <em>J</em><sub><em>sc</em></sub> of 39.85 mA/cm<sup>2</sup> and a conversion efficiency of 21.8 %. Both simulations and experiments demonstrated that ITO/SiO<sub>x</sub> DLARC with NH<sub>3</sub> plasm post treatment structure offers superior anti-reflection properties compared to single-layer ITO coatings.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 72-81"},"PeriodicalIF":3.1,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-30DOI: 10.1016/j.cap.2025.08.013
Neju Mathew Philip, M.C. Santhosh Kumar
In the present work, silver doped tin sulphide (SnS:Ag) thin films are deposited using the vacuum thermal evaporation over stainless steel (SS 304) substrates. X-ray diffraction studies and Raman analysis confirmed the formation of orthorhombic SnS without any impurity phases. FE-SEM analysis revealed a coral reef-like morphology for the deposited SnS:Ag thin films. EDS studies revealed tin-rich SnS:Ag thin films. The resistive memory switching characteristics of the fabricated SS/SnS:Ag/Ag ReRAM device is analysed and the On/Off ratio of the device is obtained as 40.7. The SS/SnS:Ag/Ag device has good endurance over 100 cycles and retention over 104 s. The creation and dissolution of conductive filaments of silver and sulphur ions through the tin vacancies is the possible conduction mechanism behind the memory switching property of the fabricated SS/SnS:Ag/Ag memory device.
{"title":"Bipolar resistive switching characteristics of silver doped tin sulphide based ReRAM devices","authors":"Neju Mathew Philip, M.C. Santhosh Kumar","doi":"10.1016/j.cap.2025.08.013","DOIUrl":"10.1016/j.cap.2025.08.013","url":null,"abstract":"<div><div>In the present work, silver doped tin sulphide (SnS:Ag) thin films are deposited using the vacuum thermal evaporation over stainless steel (SS 304) substrates. X-ray diffraction studies and Raman analysis confirmed the formation of orthorhombic SnS without any impurity phases. FE-SEM analysis revealed a coral reef-like morphology for the deposited SnS:Ag thin films. EDS studies revealed tin-rich SnS:Ag thin films. The resistive memory switching characteristics of the fabricated SS/SnS:Ag/Ag ReRAM device is analysed and the On/Off ratio of the device is obtained as 40.7. The SS/SnS:Ag/Ag device has good endurance over 100 cycles and retention over 10<sup>4</sup> s. The creation and dissolution of conductive filaments of silver and sulphur ions through the tin vacancies is the possible conduction mechanism behind the memory switching property of the fabricated SS/SnS:Ag/Ag memory device.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 37-42"},"PeriodicalIF":3.1,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144921988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-27DOI: 10.1016/j.cap.2025.08.012
Jasmine Jose , Binish C J , Jobish Johns , Sony J. Chundattu , Vijayasankar A V
This research introduces an innovative approach to repurpose agricultural by-products as catalysts in chemical synthesis, addressing waste disposal challenges. Composite films were developed using arecanut organic residue, an underexploited by-product, blended with polyvinyl alcohol (PVA) and chitosan. The films were synthesized through solvent casting and thermal curing, with experimental parameters systematically optimized. Physicochemical characterization confirmed successful integration of components and revealed structural properties. The catalytic efficiency of the films was evaluated in amide synthesis, a key reaction in pharmaceuticals. A blend of 1.5 g PVA, 0.3 g chitosan, and 1 mL arecanut residue achieved a 95 % yield in ester-amine reactions, attributed to synergistic interactions between the polymer matrix and reactive sites. The films exhibited excellent reusability, maintaining catalytic efficiency over three cycles. This study highlights the potential of arecanut residue-based composites as sustainable, efficient catalysts for industrially relevant transformations.
{"title":"Arecanut organic residue-enhanced polymer films: An efficient catalyst for amidation reactions","authors":"Jasmine Jose , Binish C J , Jobish Johns , Sony J. Chundattu , Vijayasankar A V","doi":"10.1016/j.cap.2025.08.012","DOIUrl":"10.1016/j.cap.2025.08.012","url":null,"abstract":"<div><div>This research introduces an innovative approach to repurpose agricultural by-products as catalysts in chemical synthesis, addressing waste disposal challenges. Composite films were developed using arecanut organic residue, an underexploited by-product, blended with polyvinyl alcohol (PVA) and chitosan. The films were synthesized through solvent casting and thermal curing, with experimental parameters systematically optimized. Physicochemical characterization confirmed successful integration of components and revealed structural properties. The catalytic efficiency of the films was evaluated in amide synthesis, a key reaction in pharmaceuticals. A blend of 1.5 g PVA, 0.3 g chitosan, and 1 mL arecanut residue achieved a 95 % yield in ester-amine reactions, attributed to synergistic interactions between the polymer matrix and reactive sites. The films exhibited excellent reusability, maintaining catalytic efficiency over three cycles. This study highlights the potential of arecanut residue-based composites as sustainable, efficient catalysts for industrially relevant transformations.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 43-50"},"PeriodicalIF":3.1,"publicationDate":"2025-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144996555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-26DOI: 10.1016/j.cap.2025.08.011
Lanusubo Walling , P. Chinnamuthu , J.P. Borah , A. Elayaperumal , Salam Jimkeli Singh
Indium oxide (In2O3) thin films were synthesized using the sol-gel spin-coating method with precursor concentrations of 0.15 M, 0.25 M, and 0.55 M, tailored for self-cleaning applications. The UV–Vis absorption spectra showed a strong absorption edge around 300 nm, with absorption intensity increasing from 0.15 M to 0.25 M and then slightly decreasing at 0.55 M. This indicates that 0.25 M film offers better light absorption. Wettability analysis revealed a decrease in water contact angle with increasing molarity: 60.2°, 41.6°and 27.1° for 0.15 M, 0.25 M and 0.55 M, respectively. Upon UV illumination, the contact angle further decreased to 42.2°, 31.3°and 23.1° confirming photo-induced hydrophilicity. This trend suggests that higher molarity films promote better water spreading, which is beneficial for self-cleaning applications. These characteristics establish In2O3 thin films as promising materials for water-based self-cleaning applications, demonstrating their potential in environmental remediation and surface maintenance technologies.
{"title":"Self-cleaning properties of sol-gel spin-coated In2O3 thin films with varying molarity","authors":"Lanusubo Walling , P. Chinnamuthu , J.P. Borah , A. Elayaperumal , Salam Jimkeli Singh","doi":"10.1016/j.cap.2025.08.011","DOIUrl":"10.1016/j.cap.2025.08.011","url":null,"abstract":"<div><div>Indium oxide (In<sub>2</sub>O<sub>3</sub>) thin films were synthesized using the sol-gel spin-coating method with precursor concentrations of 0.15 M, 0.25 M, and 0.55 M, tailored for self-cleaning applications. The UV–Vis absorption spectra showed a strong absorption edge around 300 nm, with absorption intensity increasing from 0.15 M to 0.25 M and then slightly decreasing at 0.55 M. This indicates that 0.25 M film offers better light absorption. Wettability analysis revealed a decrease in water contact angle with increasing molarity: 60.2°, 41.6°and 27.1° for 0.15 M, 0.25 M and 0.55 M, respectively. Upon UV illumination, the contact angle further decreased to 42.2°, 31.3°and 23.1° confirming photo-induced hydrophilicity. This trend suggests that higher molarity films promote better water spreading, which is beneficial for self-cleaning applications. These characteristics establish In<sub>2</sub>O<sub>3</sub> thin films as promising materials for water-based self-cleaning applications, demonstrating their potential in environmental remediation and surface maintenance technologies.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 17-25"},"PeriodicalIF":3.1,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144911718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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