Current Applied Physics最新文献

英文中文

Plasma etching of TiN and W electrodes with high etch selectivity over HZO thin films 在HZO薄膜上等离子体刻蚀具有高选择性的TiN和W电极

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-13 DOI: 10.1016/j.cap.2025.12.006

Hong-Hee Jeon, So-Won Kim, Jae-Hyuk Choi, Jun-Seo Hwang, Hee-Chul Lee

Precise and efficient plasma etching processes are key in fabricating next-generation semiconductor memory devices. However, further research is warranted on the selective etching of TiN and W electrode materials over the Hf_0.5Zr_0.5O₂ (HZO) layer, particularly regarding the patterning of metal–ferroelectric–metal (MFM) device structures. This study aimed to improve the etch selectivity between TiN or W electrodes over HZO ferroelectric thin films for next-generation semiconductor memory device fabrication. To this end, we systematically analyzed dry etching characteristics by using Ar/CF₄/O₂/H₂-based plasma. Specifically, we optimized process parameters, such as the RF power, process pressure, CF₄/(Ar + CF₄) gas mixing ratio, and addition ratios of O₂ or H₂, to achieve high etch selectivity between the TiN or W electrode films and HZO films. Under optimized conditions (an Ar:CF₄ ratio of 7:3, RF power of 75 W, and process pressure of 120 mTorr), the etch selectivity for TiN/HZO and W/HZO reached maximum values of 142 and 332, respectively, demonstrating excellent performance. Furthermore, the addition of O₂ enabled control over the etch rates of the TiN and W films and their selectivity over HZO films. Langmuir probe analysis and optical emission spectroscopy confirmed the enhancement in the chemical etching of the TiN and W electrodes due to the generation of F radicals. X-ray photoelectron spectroscopy analysis revealed the formation of fluorides on the etched film surfaces and an increase in the number of surface defects. The findings of this plasma etching study will potentially aid the advancement of fabrication technologies for ferroelectric memory devices.

精确、高效的等离子蚀刻工艺是制造下一代半导体存储器件的关键。然而，在Hf0.5Zr0.5O2 （HZO）层上TiN和W电极材料的选择性蚀刻，特别是关于金属-铁电-金属（MFM）器件结构的图像化，需要进一步的研究。本研究旨在提高TiN或W电极在HZO铁电薄膜上的蚀刻选择性，用于下一代半导体存储器件的制造。为此，我们系统地分析了Ar/CF4/O2/ h2基等离子体的干刻蚀特性。具体来说，我们优化了工艺参数，如射频功率、工艺压力、CF4/(Ar + CF4)气体混合比、O2或H2的添加比，以实现TiN或W电极膜与HZO膜之间的高蚀刻选择性。在优化条件下（Ar:CF4比为7:3，射频功率为75 W，工艺压力为120 mTorr）， TiN/HZO和W/HZO的蚀刻选择性分别达到最大值142和332，表现出优异的性能。此外，O2的加入可以控制TiN和W薄膜的蚀刻速率以及它们对HZO薄膜的选择性。Langmuir探针分析和光学发射光谱分析证实了由于F自由基的产生，TiN和W电极的化学腐蚀增强。x射线光电子能谱分析显示，在蚀刻膜表面形成氟化物，表面缺陷数量增加。等离子体刻蚀的研究结果将有助于铁电存储器件制造技术的进步。

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引用次数: 0

W L3-edge x-ray study of 5d orbital excitations in WSe2 and WTe2 WSe2和WTe2中5d轨道激发的wl3边缘x射线研究

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-11 DOI: 10.1016/j.cap.2025.12.005

Kyeong Jun Lee , Sihun Seong , Minji Park , Je-Ho Lee , Byeong-Gwan Cho , Tae Yeong Koo , Sang-Youn Park , Young Jun Chang , Maeng-Je Seong , Soonyong Park , Seo Hyoung Chang

Two tungsten-based transition metal dichalcogenides (TMDs), tungsten diselenide (WSe₂) and ditelluride (WTe₂), offer suitable model systems for investigating the interplay between crystal structures and 5d-orbital hybridization in layered transition-metal systems. Using W L₃-edge x-ray absorption spectroscopy (XAS) and resonant inelastic x-ray scattering (RIXS), we directly investigate the W 5d electronic states in polycrystalline TMDs samples. Combined with structural analyses, the white-line peaks in the XAS spectra, examined by their first-derivative peak positions, indicate symmetry-driven orbital states of WSe₂ and WTe₂. The corresponding RIXS spectra exhibit clearly distinct dd-excitations, indicating differences in W 5d orbital occupancy and ligand hybridization between the two compounds. This study provides a spectroscopic framework for understanding electronic structures of tungsten dichalcogenides in relation to chalcogen coordination changes and their topological and catalytic properties.

两种钨基过渡金属二硫化物（TMDs），二硒化钨（WSe2）和二碲化钨（WTe2），为研究层状过渡金属体系中晶体结构与5d轨道杂化之间的相互作用提供了合适的模型体系。利用wl3边缘x射线吸收光谱（XAS）和共振非弹性x射线散射（RIXS），我们直接研究了多晶tmd样品中的w5d电子态。结合结构分析，通过一阶导数峰位对XAS光谱中的白线峰进行检测，表明WSe2和WTe2的轨道态是对称驱动的。相应的RIXS光谱显示出明显不同的dd激发，表明两种化合物在w5d轨道占用和配体杂化方面存在差异。本研究为了解二卤钨电子结构与硫配位变化的关系及其拓扑和催化性能提供了一个光谱框架。

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引用次数: 0

Flexible and sustainable dielectric materials from natural rubber and Caryota urens extract for wearable and soft electronic devices 柔性和可持续的介电材料从天然橡胶和仙人掌提取物可穿戴和软电子设备

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-11 DOI: 10.1016/j.cap.2025.12.004

Mohammed Zamar Pasha , Faheem Ahmed Khan , N.M. Sudheep , C.J. Binish , G. Harisha , M.V. Murugendrappa , KS Krishna Kumar , Jobish Johns

This study explores the structural, mechanical, and dielectric properties of natural rubber (NR) blended with Caryota urens fruit extract (CUFE), with and without glutaraldehyde (GA) crosslinking, for sustainable dielectric materials. CUFE, rich in hydroxyl groups, was incorporated at varying concentrations to improve interfacial polarization and dielectric response. FTIR confirmed successful blending and crosslinking, while SEM revealed enhanced homogeneity with CUFE and GA treatment. Mechanical tests showed improved tensile strength and elongation at break, with optimum performance at 10 wt% CUFE. GA crosslinking enhanced dimensional stability but reduced elasticity due to network formation. Dielectric analysis indicated higher capacitance and lower impedance with increasing CUFE, driven by ionic and interfacial polarization. GA-crosslinked blends exhibited superior dielectric efficiency, with lower energy loss and higher charge storage capability. With flexibility, tunable conductivity, and strong dielectric performance, NR/CUFE blends show promise for flexible capacitors, wearable electronics, sensors, and sustainable devices.

本研究探讨了天然橡胶（NR）与洋果提取物（CUFE）共混，在戊二醛（GA）交联和不交联的情况下，作为可持续介电材料的结构、力学和介电性能。不同浓度的CUFE含有丰富的羟基，可以改善界面极化和介电响应。FTIR证实了共混和交联的成功，而SEM显示CUFE和GA处理增强了均匀性。力学试验表明，抗拉强度和断裂伸长率有所提高，在10 wt% CUFE时性能最佳。遗传算法交联提高了尺寸稳定性，但由于网络的形成降低了弹性。电介质分析表明，在离子极化和界面极化的驱动下，随着CUFE的增大，电容增大，阻抗降低。ga交联共混物具有较好的介电效率、较低的能量损失和较高的电荷存储能力。NR/CUFE混合物具有灵活性、可调电导率和强介电性能，有望用于柔性电容器、可穿戴电子产品、传感器和可持续设备。

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引用次数: 0

Ultra-wideband and angular-stable terahertz absorber with thermal stability for solar–thermal applications 具有热稳定性的超宽带角稳定太赫兹吸收体，用于太阳能热应用

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-11 DOI: 10.1016/j.cap.2025.11.016

Chettiagounder Sengodan Boopathi , Karnam Chandrakumar Ramya , Youssef Trabelsi , K. Sudha , Taha Sheheryar

The demand for efficient solar energy harvesting has driven the development of absorbers capable of operating across wide frequency bands while maintaining stability under practical conditions. Traditional absorber designs usually face challenges such as narrowband operation, polarization sensitivity, poor angular stability and reliance on complex fabrication routes, which limit their applicability in large-scale solar thermal and thermophotovoltaic systems. To address these constraints, a nickel-polyimide-nickel metasurface absorber is proposed in a metal-dielectric-metal architecture. The nested concentric resonator design promotes strong plasmonic coupling and broadband impedance matching that enables absorption above 90 % across 129.64–3621.5 THz (wavelengths 82.8–2314.0 nm) with an average of 94.58 % while maintaining over 80 % absorption beyond 4000 THz. The absorber achieves 93.59 % solar absorption efficiency under the AM 1.5 spectrum, exhibits thermal emission efficiency of 93.35 % at 3500 K and reaches solar-to-electrical conversion efficiencies up to 64.61 % under high solar concentration. In addition, it shows polarization independence and stable performance up to 50° incidence angle. By uniting ultra-broadband response and thermal resilience, the design establishes a pathway toward multifunctional absorbers for next-generation solar energy harvesting and photothermal conversion technologies.

对高效太阳能收集的需求推动了吸收器的发展，这些吸收器能够在宽频段上工作，同时在实际条件下保持稳定性。传统的吸收器设计通常面临窄带工作、极化敏感性、角度稳定性差以及依赖复杂的制造路线等挑战，这限制了它们在大规模太阳能热发电和热光伏系统中的适用性。为了解决这些限制，在金属-介电-金属结构中提出了镍-聚酰亚胺-镍超表面吸收剂。嵌套的同心谐振器设计促进了强等离子体耦合和宽带阻抗匹配，使129.64-3621.5太赫兹（波长82.8-2314.0 nm）的吸收率超过90%，平均吸收率为94.58%，而超过4000太赫兹的吸收率保持在80%以上。在AM 1.5光谱下，吸收效率达到93.59%，在3500 K时，热辐射效率达到93.35%，在高太阳浓度下，光电转换效率达到64.61%。此外，在50°入射角下，它具有偏振无关性和稳定的性能。通过结合超宽带响应和热弹性，该设计为下一代太阳能收集和光热转换技术建立了多功能吸收器的途径。

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引用次数: 0

Single-ion fluorescence probing of electro-optic modulator efficiency and Raman coupling in trapped-ion system 捕获离子系统中电光调制器效率和拉曼耦合的单离子荧光探测

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-06 DOI: 10.1016/j.cap.2025.11.017

Hyerin Kim , Jieun Yoo , Yeongseo Kim , Hyunsoo Kim , Yerin Go , Dahyun Yum , Taeyoung Choi

We present a fluorescence-based method for optimizing electro-optic modulator (EOM) performance using a single trapped ion. By comparing fluorescence from a trapped ion with optical cavity measurements, we determine modulation conditions for optimizing optical sidebands, which is essential for driving various transitions relevant to ion-qubit manipulation. We also observe enhanced fluorescence from a trapped ion when applying high-power pulsed laser without EOM modulation. Since the pulsed laser is used for performing quantum gates on individual ions, this fluorescence signal can serve as a diagnostic tool for aligning the ion with a tightly focused laser beam. These results provide a practical method for optimizing sideband generation and diagnosing spatial beam overlap in trapped-ion quantum systems.

我们提出了一种基于荧光的方法来优化电光调制器（EOM）性能，使用单个捕获离子。通过比较捕获离子的荧光与光学腔测量，我们确定了优化光学边带的调制条件，这对于驱动与离子量子比特操作相关的各种跃迁至关重要。我们还观察到，当使用不带EOM调制的高功率脉冲激光时，捕获离子的荧光增强。由于脉冲激光用于在单个离子上执行量子门，这种荧光信号可以作为一种诊断工具，用于将离子与紧密聚焦的激光束对齐。这些结果为优化边带生成和诊断捕获离子量子系统中的空间束重叠提供了一种实用的方法。

引用次数: 0

Pressure-tuning of magnetic transition in a kagome antiferromagnet, YMn6Sn6 kagome反铁磁体YMn6Sn6的磁跃迁压力调谐

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-05 DOI: 10.1016/j.cap.2025.12.003

Minhyuk Choi , Resta Agung Susilo , Hyeongwoo Seo , Jiafeng Yan , Pyosang Kim , Hyeonsu Kim , Jaeyong Kim , Donghoon Seoung , Jun Sung Kim

To investigate the pressure effect on exchange interactions and the magnetic phase of YMn₆Sn₆, we performed X-ray diffraction and electrical transport measurements at the high pressure up to

\sim

18 GPa using diamond anvil cell. Both experimental results confirmed no structural transition, while low-temperature magnetoresistance measurements revealed that the forced-ferromagnetic transition field is significantly suppressed with increasing pressure. These results can be understood as a pressure-induced reduction of the antiferromagnetic exchange interaction, demonstrating that lattice compression under pressure effectively modifies the magnetic ground state of the 166-type Kagome magnet.

为了研究压力对交换相互作用和YMn6Sn6磁相的影响，我们使用金刚石砧细胞在高达~ 18 GPa的高压下进行了x射线衍射和电输运测量。两个实验结果都证实了没有结构转变，而低温磁阻测量表明，随着压力的增加，强制铁磁转变场被显著抑制。这些结果可以理解为压力诱导的反铁磁交换相互作用的减少，表明在压力下晶格压缩有效地改变了166型Kagome磁体的磁性基态。

引用次数: 0

Correlation effects on magnetic structure and lattice dynamics of LaMn7O12: A first-principles study LaMn7O12磁性结构和晶格动力学的相关效应：第一性原理研究

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-03 DOI: 10.1016/j.cap.2025.12.001

Haeyoon Jung , Indukuru Ramesh Reddy , Bongjae Kim , Jiyeon Kim , Sooran Kim

LaMn₇O₁₂, a quadruple perovskite oxide (AA'₃B₄O₁₂-type), has attracted attention for its notable bifunctional activity in oxygen evolution and reduction reactions. Here, we systematically investigate the magnetic phase diagram and lattice dynamics of LaMn₇O₁₂ using two density functional theory plus Hubbard U (DFT + U) approaches: the spin-density and the charge-only-density formalism. Phase diagram analysis as a function of U and J shows that both methods stabilize the experimentally observed antiferromagnetic (AFM) configuration (C-type AFM at the B-site and ferrimagnetic structure at the A′-site Mn ions) at U = 3.5 eV and J = 0.8 eV. These U and J values are consistent with those obtained from the constrained random phase approximation. Furthermore, we observe the dynamical stability of the AFM phase through phonon dispersion curves and analyze the Raman-active phonon modes. These results highlight the critical role of appropriate U and J parameters in accurately describing the properties of LaMn₇O₁₂.

LaMn7O12是一种四重钙钛矿氧化物（AA' 3b4o12型），因其在析氧和还原反应中具有显著的双功能活性而受到人们的关注。本文采用两种密度泛函理论加Hubbard U （DFT + U）方法：自旋密度和纯电荷密度形式化，系统地研究了LaMn7O12的磁相图和晶格动力学。作为U和J函数的相图分析表明，在U = 3.5 eV和J = 0.8 eV时，两种方法都稳定了实验观察到的反铁磁（AFM）结构（b位的c型AFM和a '位Mn离子的铁磁结构）。这些U和J值与约束随机相位近似得到的值一致。此外，我们通过声子色散曲线观察了AFM相位的动态稳定性，并分析了拉曼主动声子模式。这些结果强调了适当的U和J参数在准确描述LaMn7O12性质方面的关键作用。

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引用次数: 0

Reversible conversion between Schottky and ohmic contacts of zinc oxide microwire under piezoelectric potential manipulation 压电电位作用下氧化锌微丝肖特基触点与欧姆触点的可逆转换

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-02 DOI: 10.1016/j.cap.2025.12.002

Hue Tran , Yugyeong Je , Hyunjeong Jeong , Eleanor E.B. Campbell , Ki Kang Kim , Sang Wook Lee

The energy barrier height of ZnO microwire electrical contacts is tuned by inducing piezoelectric polarization charges at the local metal-semiconductor interface when a mechanical deformation is applied to the ZnO microwire. Strain is introduced in the individual ZnO microwire by compressive stress applied along the axial direction, which controllably bends the microwire, observed in an optical microscope. As a result, the metal-semiconductor local contact can transform from Schottky to Ohmic and vice versa. This work demonstrates a simple method for controlling the electrical properties of ZnO nanowires to achieve reversible tuning between Schottky and Ohmic contact on one device by combining in-situ measurement with mechanical manipulation. This can contribute to the development of multifunctional and Ohmic/Schottky-based sensors, switches, rectifiers, and other functional electronic devices.

当对ZnO微丝施加机械变形时，通过在局部金属-半导体界面处诱导压电极化电荷来调节ZnO微丝电触点的能垒高度。在光学显微镜下观察到，沿轴向施加的压应力在单个ZnO微丝中引入了应变，这可以控制微丝的弯曲。因此，金属-半导体局部接触可以从肖特基转换为欧姆，反之亦然。本工作展示了一种简单的方法来控制ZnO纳米线的电学特性，通过结合原位测量和机械操作来实现一个器件上肖特基和欧姆接触之间的可逆调谐。这有助于开发多功能和基于欧姆/肖特基的传感器、开关、整流器和其他功能电子设备。

引用次数: 0

Solvent–precursor interaction engineering for formamidinium-based perovskites: Role of dimethylacetamide, N-methyl-2-pyrrolidone, and methylammonium chloride in film formation and device performance 甲脒基钙钛矿的溶剂-前驱体相互作用工程：二甲基乙酰胺、n -甲基-2-吡咯烷酮和甲基氯化铵在薄膜形成和器件性能中的作用

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-02 DOI: 10.1016/j.cap.2025.11.010

Muntae Hwang, Il-Wook Cho, Hyunbok Lee, Mee-Yi Ryu

In the solution-processing method of perovskites, selecting appropriate solvents for each precursor is crucial for synthesizing homogeneous perovskite films, as the interaction energy and mechanism between each solvent and precursor vary significantly. In this study, we used dimethylacetamide (DMAc) as the host solvent instead of dimethylformamide to match the Hansen solubility parameters (HSP) with N-methyl-2-pyrrolidone (NMP) and anti-solvent. DMAc-based perovskite facilitates the formation of intermediate phase with NMP due to well-matched HSP, resulting in formation of a glossy perovskite film. However, the power conversion efficiency (PCE) of DMAc-based perovskite solar cells did not improve, primarily because of the formation of small grains. Although methylammonium chloride (MACl) was introduced as an additive to promote grain growth, no significant enhancement in the PCE was observed, likely due to the low interaction energy between MACl and NMP. These findings enhance our understanding of solvent-precursor interactions by applying HSP theory and MACl additive.

在钙钛矿溶液加工方法中，每种前驱体选择合适的溶剂是制备均相钙钛矿薄膜的关键，因为每种溶剂与前驱体的相互作用能和作用机理差异很大。本研究以二甲基乙酰胺（DMAc）代替二甲基甲酰胺作为宿主溶剂，与n -甲基-2-吡咯烷酮（NMP）和抗溶剂匹配汉森溶解度参数（HSP）。dmac基钙钛矿由于HSP匹配良好，有利于与NMP形成中间相，形成光滑的钙钛矿膜。然而，dmac基钙钛矿太阳能电池的功率转换效率（PCE）并没有提高，主要是因为形成了小颗粒。虽然氯化铵（MACl）作为添加剂被引入以促进晶粒生长，但PCE没有显著增强，可能是由于MACl和NMP之间的相互作用能较低。这些发现增强了我们对溶剂-前驱体相互作用的理解。

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引用次数: 0

Dependence of piezoelectric properties and thermal stability of (1–x)BiFeO3–xBaTiO3 ceramics in relation to accelerometer performance （1-x） BiFeO3-xBaTiO3陶瓷的压电性能和热稳定性与加速度计性能的关系

IF 3.1 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.cap.2025.11.014

Kyu-Hyun Park, Byung-Hoon Kim, Changyeon Baek, Yun-Gi Jeong, Min-Ku Lee, Gyoung-Ja Lee

This study investigates the compositional dependence of piezoelectric and thermal properties in (1–x)BiFeO₃–xBaTiO₃ ceramics and evaluates their applicability in high-temperature accelerometer applications. Four compositions (x = 0.25, 0.30, 0.33, 0.35) were synthesized and analyzed for their structural, electrical, and thermal behaviors. The x = 0.25 composition, despite a relatively low piezoelectric coefficient (∼107 pC/N), exhibited the highest mechanical quality factor (∼67) and depolarization temperature (∼450 °C), along with superior resistance to thermally and mechanically induced degradation. When used in compression-mode accelerometers, this composition showed the highest sensitivity (∼23.4 pC/g) and operated up to ∼380 °C. These results suggest that reliable high-temperature sensor performance is influenced not only by the piezoelectric coefficient but also by thermal and mechanical stability, highlighting the importance of comprehensive compositional optimization. Additionally, a strong correlation was observed between the in situ piezoelectric response of the ceramics and the temperature-dependent sensitivity of the assembled sensors.

本研究研究了（1-x） BiFeO3-xBaTiO3陶瓷中压电和热性能的成分依赖性，并评估了其在高温加速度计应用中的适用性。合成了四种组合物（x = 0.25, 0.30, 0.33, 0.35），并对其结构，电学和热行为进行了分析。x = 0.25的组合物，尽管具有相对较低的压电系数（~ 107 pC/N），但具有最高的机械质量因子（~ 67）和去极化温度（~ 450°C），以及对热和机械诱导降解的优异抵抗能力。当用于压缩模式加速度计时，该成分显示出最高的灵敏度（~ 23.4 pC/g），并且工作温度高达~ 380°C。这些结果表明，可靠的高温传感器性能不仅受到压电系数的影响，还受到热稳定性和机械稳定性的影响，突出了综合成分优化的重要性。此外，观察到陶瓷的原位压电响应与组装传感器的温度依赖灵敏度之间存在很强的相关性。

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引用次数: 0

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