Pub Date : 2024-10-18DOI: 10.1016/j.cap.2024.10.011
Y.C. Goswami , R. Bisauriya , A.A. Hlaing , T.T. Moe , Jyoti Bala Kaundal , D. Aryanto , R. Yudianti
SnO2/ZnS nanocomposites were successfully synthesized using a modified hydrothermal route. The synthesis involved separate co-precipitation of SnO2 and ZnS, followed by ultrasonic stirring and hydrothermal treatment. The resulting nanocomposites exhibited controlled size and composition. By adjusting synthesis parameters such as the molar ratio of Sn to Zn, reaction temperature, and reaction time, the morphology and properties of the nanocomposites could be finely tuned. The synthesized SnO2/ZnS nanocomposites demonstrated remarkable improvements in photocatalytic performance compared to pure SnO2 or ZnS nanoparticles. This enhancement was attributed to the nanocomposites' enhanced charge separation, increased surface area, and improved light absorption capabilities. As a result, the SnO2/ZnS nanocomposites hold great promise for a wide range of applications, including environmental remediation, water splitting, and solar energy conversion.
{"title":"Enhancing photocatalytic performance of SnO2/ZnS nanocomposites synthesized via dual-step precipitation and ultrasonicated hydrothermal route","authors":"Y.C. Goswami , R. Bisauriya , A.A. Hlaing , T.T. Moe , Jyoti Bala Kaundal , D. Aryanto , R. Yudianti","doi":"10.1016/j.cap.2024.10.011","DOIUrl":"10.1016/j.cap.2024.10.011","url":null,"abstract":"<div><div>SnO<sub>2</sub>/ZnS nanocomposites were successfully synthesized using a modified hydrothermal route. The synthesis involved separate co-precipitation of SnO<sub>2</sub> and ZnS, followed by ultrasonic stirring and hydrothermal treatment. The resulting nanocomposites exhibited controlled size and composition. By adjusting synthesis parameters such as the molar ratio of Sn to Zn, reaction temperature, and reaction time, the morphology and properties of the nanocomposites could be finely tuned. The synthesized SnO<sub>2</sub>/ZnS nanocomposites demonstrated remarkable improvements in photocatalytic performance compared to pure SnO<sub>2</sub> or ZnS nanoparticles. This enhancement was attributed to the nanocomposites' enhanced charge separation, increased surface area, and improved light absorption capabilities. As a result, the SnO<sub>2</sub>/ZnS nanocomposites hold great promise for a wide range of applications, including environmental remediation, water splitting, and solar energy conversion.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 275-283"},"PeriodicalIF":2.4,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effect of copper composition on the structure and mechanical properties of CuAlNi alloys was investigated using MD simulation and characterization methods. It was found that the structure of CuAlNi alloys markedly resembles Cu composition, which alterations from the initial single (FCC) to (BCC) structure and then to a duplex BCC structure as the Cu content is raised. Nanoindentation measurements show that the hardness of CuAlNi alloys increases with Cu content. When there are more Al elements, the surface of the material is first combined with ions in seawater so that the corrosion potential is significantly reduced. This research seeks to identify CuAlNi alloys with improved properties through molecular dynamics simulations and experimental analyses, highlighting the connections between microstructure and mechanical behavior.
{"title":"Mechanical and electrochemical characterization of CuAlNi alloys","authors":"Jia-Yuan Chen , Hoang-Giang Nguyen , Ming-Hong Lin , Te-Hua Fang","doi":"10.1016/j.cap.2024.10.008","DOIUrl":"10.1016/j.cap.2024.10.008","url":null,"abstract":"<div><div>The effect of copper composition on the structure and mechanical properties of CuAlNi alloys was investigated using MD simulation and characterization methods. It was found that the structure of CuAlNi alloys markedly resembles Cu composition, which alterations from the initial single (FCC) to (BCC) structure and then to a duplex BCC structure as the Cu content is raised. Nanoindentation measurements show that the hardness of CuAlNi alloys increases with Cu content. When there are more Al elements, the surface of the material is first combined with ions in seawater so that the corrosion potential is significantly reduced. This research seeks to identify CuAlNi alloys with improved properties through molecular dynamics simulations and experimental analyses, highlighting the connections between microstructure and mechanical behavior.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"69 ","pages":"Pages 8-20"},"PeriodicalIF":2.4,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-17DOI: 10.1016/j.cap.2024.10.012
Upendra Kumar , Hyeon Woo Kim , Gyanendra Kumar Maurya , Bincy Babu Raj , Sobhit Singh , Ajay Kumar Kushwaha , Sung Beom Cho , Hyunseok Ko
The investigation of emerging non-toxic perovskite materials has been undertaken to advance the fabrication of environmentally sustainable lead-free perovskite solar cells. This study introduces a machine learning methodology aimed at predicting innovative halide perovskite materials that hold promise for use in photovoltaic applications. The seven newly predicted materials are as follows: CsMnCl4, Rb3Mn2Cl9, Rb4MnCl6, Rb3MnCl5, RbMn2Cl7, RbMn4Cl9, and CsIn2Cl7. The predicted compounds are first screened using a machine learning approach, and their validity is subsequently verified through density functional theory calculations. CsMnCl4 is notable among them, displaying a bandgap of 1.37 eV, falling within the Shockley-Queisser limit, making it suitable for photovoltaic applications. Through the integration of machine learning and density functional theory, this study presents a methodology that is more effective and thorough for the discovery and design of materials.
为了推动制造环境可持续的无铅过氧化物太阳能电池，对新兴的无毒过氧化物材料进行了研究。本研究介绍了一种机器学习方法，旨在预测有望用于光伏应用的创新型卤化物包晶材料。新预测的七种材料如下：CsMnCl4、Rb3Mn2Cl9、Rb4MnCl6、Rb3MnCl5、RbMn2Cl7、RbMn4Cl9 和 CsIn2Cl7。首先使用机器学习方法对预测的化合物进行筛选，然后通过密度泛函理论计算验证其有效性。CsMnCl4 是其中的佼佼者，它显示出 1.37 eV 的带隙，处于肖克利-奎塞尔极限之内，因此适合光伏应用。通过机器学习与密度泛函理论的结合，本研究提出了一种更有效、更全面的方法来发现和设计材料。
{"title":"Machine learning-enhanced design of lead-free halide perovskite materials using density functional theory","authors":"Upendra Kumar , Hyeon Woo Kim , Gyanendra Kumar Maurya , Bincy Babu Raj , Sobhit Singh , Ajay Kumar Kushwaha , Sung Beom Cho , Hyunseok Ko","doi":"10.1016/j.cap.2024.10.012","DOIUrl":"10.1016/j.cap.2024.10.012","url":null,"abstract":"<div><div>The investigation of emerging non-toxic perovskite materials has been undertaken to advance the fabrication of environmentally sustainable lead-free perovskite solar cells. This study introduces a machine learning methodology aimed at predicting innovative halide perovskite materials that hold promise for use in photovoltaic applications. The seven newly predicted materials are as follows: CsMnCl<sub>4</sub>, Rb<sub>3</sub>Mn<sub>2</sub>Cl<sub>9</sub>, Rb<sub>4</sub>MnCl<sub>6</sub>, Rb<sub>3</sub>MnCl<sub>5</sub>, RbMn<sub>2</sub>Cl<sub>7</sub>, RbMn<sub>4</sub>Cl<sub>9</sub>, and CsIn<sub>2</sub>Cl<sub>7</sub>. The predicted compounds are first screened using a machine learning approach, and their validity is subsequently verified through density functional theory calculations. CsMnCl<sub>4</sub> is notable among them, displaying a bandgap of 1.37 eV, falling within the Shockley-Queisser limit, making it suitable for photovoltaic applications. Through the integration of machine learning and density functional theory, this study presents a methodology that is more effective and thorough for the discovery and design of materials.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"69 ","pages":"Pages 1-7"},"PeriodicalIF":2.4,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report the formation of a buried ultra-thin layer of Ag clusters in a Si substrate through 6 keV Ag⁺ ion beam implantation, which exhibits a significant enhancement of the Raman signal. This suggests the development of a reliable and reusable chip for Surface Enhanced Raman Spectroscopy (SERS). The presence of a clustered Ag layer in Si also leads to pronounced UV absorption, thus expanding the material's potential in safeguarding from photo-degradation and optoelectronic devices. Physicochemical analysis conducted using X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy, and cross-sectional Transmission Electron Microscopy (TEM) confirms the formation of a 9 nm buried layer of Ag clusters within the amorphous Si layer. This method of Ag ion implantation in Si offers a simple approach to engineering surfaces with enhanced optical and spectroscopic characteristics.
我们报告了通过 6 keV Ag⁺离子束植入在硅基底上形成的埋藏式超薄银簇层，该层可显著增强拉曼信号。这预示着一种可靠且可重复使用的表面增强拉曼光谱（SERS）芯片即将问世。硅中存在的簇状银层也导致了明显的紫外线吸收，从而扩大了该材料在防止光降解和光电设备方面的潜力。利用 X 射线光电子能谱（XPS）、原子力显微镜和横截面透射电子显微镜（TEM）进行的物理化学分析证实，在非晶态硅层中形成了 9 纳米的银簇埋层。这种在硅中植入银离子的方法提供了一种简便的方法，可用于制造具有增强光学和光谱特性的表面。
{"title":"Development of an efficient UV absorber and reusable SERS chip by buried Ag ion implantation in Si substrate","authors":"Sudip Bhowmick , Biswarup Satpati , Debasree Chowdhury , Prasanta Karmakar","doi":"10.1016/j.cap.2024.10.013","DOIUrl":"10.1016/j.cap.2024.10.013","url":null,"abstract":"<div><div>We report the formation of a buried ultra-thin layer of Ag clusters in a Si substrate through 6 keV Ag⁺ ion beam implantation, which exhibits a significant enhancement of the Raman signal. This suggests the development of a reliable and reusable chip for Surface Enhanced Raman Spectroscopy (SERS). The presence of a clustered Ag layer in Si also leads to pronounced UV absorption, thus expanding the material's potential in safeguarding from photo-degradation and optoelectronic devices. Physicochemical analysis conducted using X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy, and cross-sectional Transmission Electron Microscopy (TEM) confirms the formation of a 9 nm buried layer of Ag clusters within the amorphous Si layer. This method of Ag ion implantation in Si offers a simple approach to engineering surfaces with enhanced optical and spectroscopic characteristics.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 267-274"},"PeriodicalIF":2.4,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1016/j.cap.2024.10.010
Mahardika Yoga Darmawan , Marhan Ebit Saputra , Leni Rumiyanti , Nurul Imani Istiqomah , Nanang Adrianto , Rivaldo Marsel Tumbelaka , Harlina Ardiyanti , Nur Aji Wibowo , Nining Sumawati Asri , Julia Angel , Hasniah Aliah , Ari Dwi Nugraheni , Edi Suharyadi
Cancer is a major global health problem, and finding effective treatments is a challenging task. Magnetic hyperthermia is one of the promising alternative cancer treatments because the heat generated is localized and safe for healthy cells. Magnetite (Fe₃O₄) nanoparticles are commonly used as heat generating materials. This study focuses on the development of Fe₃O₄ nanoparticles through green synthesis using Moringa oleifera extract. Fe₃O₄ is coated with silver nanoparticles using mesoporous silica. Silver (Ag) nanoparticles are used because of their biocompatibility while mesoporous silica nanoparticles (MSN) because of their ability to carry other agents and their relatively low toxicity. X-ray diffraction revealed that the addition of Ag reduced the average crystallite size of the Fe₃O₄-MSN/Ag composite to around 15.7–16.1 nm, with an average particle size of 21.3 nm. The presence of magnetite and silver was confirmed by electron microscopy techniques. Magnetic tests showed that the composite had a saturation magnetization of about 10 emu/g. Heat generation tests showed that the composite could increase the temperature by more than 5 °C, exceeding the minimum temperature required for effective hyperthermia treatment, with a specific absorption rate (SAR) of 1.59 W/g at a field strength of 150 Oe and a frequency of 20 kHz. The effective SAR value obtained is almost 5 times greater compared to commercial Fe₃O₄. In vitro cytotoxicity tests utilize NIH3T3 fibroblasts showed that Fe₃O₄-MSN/Ag was non-toxic. These results indicate that this magnetic nanocomposite has significantly improved structural, optical, magnetic, and thermal properties, making it a promising candidate for cancer hyperthermia treatment.
{"title":"Novel green synthesis approach of Fe3O4-MSN/Ag nanocomposite using moringa oleifera extract for magnetic hyperthermia applications","authors":"Mahardika Yoga Darmawan , Marhan Ebit Saputra , Leni Rumiyanti , Nurul Imani Istiqomah , Nanang Adrianto , Rivaldo Marsel Tumbelaka , Harlina Ardiyanti , Nur Aji Wibowo , Nining Sumawati Asri , Julia Angel , Hasniah Aliah , Ari Dwi Nugraheni , Edi Suharyadi","doi":"10.1016/j.cap.2024.10.010","DOIUrl":"10.1016/j.cap.2024.10.010","url":null,"abstract":"<div><div>Cancer is a major global health problem, and finding effective treatments is a challenging task. Magnetic hyperthermia is one of the promising alternative cancer treatments because the heat generated is localized and safe for healthy cells. Magnetite (Fe₃O₄) nanoparticles are commonly used as heat generating materials. This study focuses on the development of Fe₃O₄ nanoparticles through green synthesis using <em>Moringa oleifera</em> extract. Fe₃O₄ is coated with silver nanoparticles using mesoporous silica. Silver (Ag) nanoparticles are used because of their biocompatibility while mesoporous silica nanoparticles (MSN) because of their ability to carry other agents and their relatively low toxicity. X-ray diffraction revealed that the addition of Ag reduced the average crystallite size of the Fe₃O₄-MSN/Ag composite to around 15.7–16.1 nm, with an average particle size of 21.3 nm. The presence of magnetite and silver was confirmed by electron microscopy techniques. Magnetic tests showed that the composite had a saturation magnetization of about 10 emu/g. Heat generation tests showed that the composite could increase the temperature by more than 5 °C, exceeding the minimum temperature required for effective hyperthermia treatment, with a specific absorption rate (SAR) of 1.59 W/g at a field strength of 150 Oe and a frequency of 20 kHz. The effective SAR value obtained is almost 5 times greater compared to commercial Fe₃O₄. In vitro cytotoxicity tests utilize NIH3T3 fibroblasts showed that Fe₃O₄-MSN/Ag was non-toxic. These results indicate that this magnetic nanocomposite has significantly improved structural, optical, magnetic, and thermal properties, making it a promising candidate for cancer hyperthermia treatment.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 242-256"},"PeriodicalIF":2.4,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-15DOI: 10.1016/j.cap.2024.10.009
S. Sadhasivam, T. Sadhasivam, K. Selvakumar, T.H. Oh
The zinc oxide semiconductor associated with defects and their recombination effect restricts the development of photoelectrode for hydrogen evolution. The combination of semiconductor hetero-junction and hierarchical interface of ZnO/Bi2S3 photoelectrode fabricated. In this study, heterostructure ZnO/Bi2S3 were studied as a photoanode with their impact of oxygen vacancy in ZnO nano rods. The trace of the Bi2S3 on the ZnO was studied and compared with pristine and oxygen annealed ZnO nano rods. The photon-luminescence studies reveal that shallow donor and acceptor defect in ZnO and restricted by Bi2S3 heterostructure. The less defect contemplations in the photoanodes accelerates up electron and hole migration leading to significant built-in potential and photocurrent generation. The appropriate method has been followed to architype less interfacial defect in ZnO(300)/Bi2S3 photoanode and boosted the photo-redox reactions for efficient hydrogen evolution. The photoanode exhibits substantial properties of photocurrent density 0.33 mA/cm2, charge transfer resistance of 700 Ω cm2 and higher inbuilt potential of −0.88V vs Ag/AgCl with 0.17 % applied bias photon to electron conversion efficiency and 0.11 % solar to hydrogen conversion efficiency.
{"title":"Hierarchical Bi2S3 nanothorn on ZnO core-branch photoelectrode: A promising heterostructure for enhanced photoelectrochemical water splitting","authors":"S. Sadhasivam, T. Sadhasivam, K. Selvakumar, T.H. Oh","doi":"10.1016/j.cap.2024.10.009","DOIUrl":"10.1016/j.cap.2024.10.009","url":null,"abstract":"<div><div>The zinc oxide semiconductor associated with defects and their recombination effect restricts the development of photoelectrode for hydrogen evolution. The combination of semiconductor hetero-junction and hierarchical interface of ZnO/Bi<sub>2</sub>S<sub>3</sub> photoelectrode fabricated. In this study, heterostructure ZnO/Bi<sub>2</sub>S<sub>3</sub> were studied as a photoanode with their impact of oxygen vacancy in ZnO nano rods. The trace of the Bi<sub>2</sub>S<sub>3</sub> on the ZnO was studied and compared with pristine and oxygen annealed ZnO nano rods. The photon-luminescence studies reveal that shallow donor and acceptor defect in ZnO and restricted by Bi<sub>2</sub>S<sub>3</sub> heterostructure. The less defect contemplations in the photoanodes accelerates up electron and hole migration leading to significant built-in potential and photocurrent generation. The appropriate method has been followed to architype less interfacial defect in ZnO(300)/Bi<sub>2</sub>S<sub>3</sub> photoanode and boosted the photo-redox reactions for efficient hydrogen evolution. The photoanode exhibits substantial properties of photocurrent density 0.33 mA/cm<sup>2</sup>, charge transfer resistance of 700 Ω cm<sup>2</sup> and higher inbuilt potential of −0.88V vs Ag/AgCl with 0.17 % applied bias photon to electron conversion efficiency and 0.11 % solar to hydrogen conversion efficiency.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 257-266"},"PeriodicalIF":2.4,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-09DOI: 10.1016/j.cap.2024.10.006
Alagumalai Manimekalai , Kuppu Sakthi Velu , Sonaimuthu Mohandoss , Rizwan Wahab , Naushad Ahmad , Jeong Hyun Seo , Seho Sun , Yong Rok Lee
In this study, we synthesized a poly (aniline)-multiwall carbon nanotube (PANI@MWCNT) composite for use as a counter electrode (CE) in dye-sensitized solar cells. Moreover, FE-SEM and HR-TEM images of PANI@MWCNT revealed carbon nanotube/ropes embedded in the polymer matrix. An X-ray diffraction pattern confirmed the amorphous nature of the composite. Further, Electrochemical impedance spectroscopy studies indicated a charge transport resistance value (Rct) of 4.36 KΩ for PANI@MWCNT. CV studies demonstrated improved electrocatalytic performance and faster redox behavior in the PANI@MWCNT composite. BET analysis measured the pore size of the as-prepared composite to be 15–50 nm. Subsequently, the as-synthesized PANI, PANT@MWNCT, pristine MWCNT, and platinum were evaluated as CEs in DSSCs using a polyethylene oxide polymer-based liquid electrolyte and a TiO2 nanocrystalline photoanode. Among these CEs, the PANI@MWCNT CE exhibited an efficiency of 8.07 %, and the stability test indicated that the as-prepared composite CE retained 7.81 % efficiency after 15 days.
在这项研究中，我们合成了一种聚（苯胺）-多壁碳纳米管（PANI@MWCNT）复合材料，可用作染料敏化太阳能电池的对电极（CE）。此外，PANI@MWCNT 的 FE-SEM 和 HR-TEM 图像显示了聚合物基体中嵌入的碳纳米管/根。X 射线衍射图样证实了该复合材料的无定形性质。此外，电化学阻抗光谱研究表明，PANI@MWCNT 的电荷传输电阻值 (Rct) 为 4.36 KΩ。CV 研究表明，PANI@MWCNT 复合材料的电催化性能得到改善，氧化还原行为更快。BET 分析测得制备的复合材料的孔径为 15-50 nm。随后，使用基于聚环氧乙烷聚合物的液态电解质和 TiO2 纳米晶光电阳极，对合成的 PANI、PANT@MWNCT、原始 MWCNT 和铂作为 DSSC 中的 CE 进行了评估。在这些 CE 中，PANI@MWCNT CE 的效率为 8.07%，稳定性测试表明制备的复合 CE 在 15 天后仍能保持 7.81% 的效率。
{"title":"Poly(aniline)-multiwall carbon nanotube (PANI@MWCNT) composite as high-cost Pt free counter electrode for dye-sensitized solar cells","authors":"Alagumalai Manimekalai , Kuppu Sakthi Velu , Sonaimuthu Mohandoss , Rizwan Wahab , Naushad Ahmad , Jeong Hyun Seo , Seho Sun , Yong Rok Lee","doi":"10.1016/j.cap.2024.10.006","DOIUrl":"10.1016/j.cap.2024.10.006","url":null,"abstract":"<div><div>In this study, we synthesized a poly (aniline)-multiwall carbon nanotube (PANI@MWCNT) composite for use as a counter electrode (CE) in dye-sensitized solar cells. Moreover, FE-SEM and HR-TEM images of PANI@MWCNT revealed carbon nanotube/ropes embedded in the polymer matrix. An X-ray diffraction pattern confirmed the amorphous nature of the composite. Further, Electrochemical impedance spectroscopy studies indicated a charge transport resistance value (R<sub>ct</sub>) of 4.36 KΩ for PANI@MWCNT. CV studies demonstrated improved electrocatalytic performance and faster redox behavior in the PANI@MWCNT composite. BET analysis measured the pore size of the as-prepared composite to be 15–50 nm. Subsequently, the as-synthesized PANI, PANT@MWNCT, pristine MWCNT, and platinum were evaluated as CEs in DSSCs using a polyethylene oxide polymer-based liquid electrolyte and a TiO<sub>2</sub> nanocrystalline photoanode. Among these CEs, the PANI@MWCNT CE exhibited an efficiency of 8.07 %, and the stability test indicated that the as-prepared composite CE retained 7.81 % efficiency after 15 days.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":""},"PeriodicalIF":2.4,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-06DOI: 10.1016/j.cap.2024.10.005
Yamagouni Paramesh Goud , Nirlakalla Ravi
Tellurite glasses modified with V2O5, Fe2O3, and Na2O (TVFN), along with Sm3+-doped Gd2O3 and Sb2O3 based tellurite (TVGSNSm) glasses evaluated for various properties. The thermal stability of these glasses, with a critical value of 105 °C advantageous to luminescence. Fourier transform infrared and micro-Raman bands were identified at 669, 745, 859, 943, and 1003 cm−1 in the deconvolution. Electron spin resonance revealed a signal at a magnetic field of 340.75 mT (g = 1.77). The magnetic hysteresis of TVFN glasses from a vibrating sample magnetometer which possess coercivity 62 mT and remanence 1.5х10−2 Am2/kg with a saturation magnetization 0.1975 A m2/kg and magnetic susceptibility as high as 0.1328. The magnetic nature confirmed by superconducting quantum interference device. Photoluminescence of Sm3+-doped TVGSNSm glasses excited by 408 nm showed 646 nm (red-orange) dominated emission band over the 603 nm band. These findings underscore the potential of TVFN glasses for applications in magneto-optical devices.
{"title":"High magnetic susceptibility-based vanadate tellurite glasses for magneto-optical device applications","authors":"Yamagouni Paramesh Goud , Nirlakalla Ravi","doi":"10.1016/j.cap.2024.10.005","DOIUrl":"10.1016/j.cap.2024.10.005","url":null,"abstract":"<div><div>Tellurite glasses modified with V<sub>2</sub>O<sub>5</sub>, Fe<sub>2</sub>O<sub>3</sub>, and Na<sub>2</sub>O (TVFN), along with Sm<sup>3+</sup>-doped Gd<sub>2</sub>O<sub>3</sub> and Sb<sub>2</sub>O<sub>3</sub> based tellurite (TVGSNSm) glasses evaluated for various properties. The thermal stability of these glasses, with a critical value of 105 °C advantageous to luminescence. Fourier transform infrared and micro-Raman bands were identified at 669, 745, 859, 943, and 1003 cm<sup>−1</sup> in the deconvolution. Electron spin resonance revealed a signal at a magnetic field of 340.75 mT (g = 1.77). The magnetic hysteresis of TVFN glasses from a vibrating sample magnetometer which possess coercivity 62 mT and remanence 1.5х10<sup>−2</sup> Am<sup>2</sup>/kg with a saturation magnetization 0.1975 A m<sup>2</sup>/kg and magnetic susceptibility as high as 0.1328. The magnetic nature confirmed by superconducting quantum interference device. Photoluminescence of Sm<sup>3+</sup>-doped TVGSNSm glasses excited by 408 nm showed 646 nm (red-orange) dominated emission band over the 603 nm band. These findings underscore the potential of TVFN glasses for applications in magneto-optical devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 206-213"},"PeriodicalIF":2.4,"publicationDate":"2024-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-05DOI: 10.1016/j.cap.2024.10.001
Rajkumar Dey , Shamima Hussain , A.K. Pal
A possibility of fabricating paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diode structures has been demonstrated here. Ag (∼5 μm), CdTe (∼50 μm), CdS (∼45 μm), Au and In dots (∼5 μm) were deposited on the cellulose using appropriate stainless-steel masks to obtain the requisite diode structures. The band gaps of the CdTe and CdS layers were ∼1.55 eV and ∼1.45 eV, respectively. Current-voltage (I-V) characteristics of the paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diodes were recorded at room temperature. Ideality factor (n), series resistance (RS) and barrier height (φb) of the respective diodes were computed. The barrier height (φb) and ideality factor (n) computed from current-voltage characteristics were found to be 0.74 eV and 1.8, respectively at room temperature. Series resistance and φb computed by using Cheung-Cheung method were ∼177 Ω and ∼0.45 eV, respectively. They are comparable to the resistance derived from a modified Norde method. The fabricated diodes were reproducible and stable for a few months. These diode structures were tested in an open environment at room temperature and showed no noticeable ageing effect.
{"title":"Realization of diode structures on paper: An example of papertronics","authors":"Rajkumar Dey , Shamima Hussain , A.K. Pal","doi":"10.1016/j.cap.2024.10.001","DOIUrl":"10.1016/j.cap.2024.10.001","url":null,"abstract":"<div><div>A possibility of fabricating paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diode structures has been demonstrated here. Ag (∼5 μm), CdTe (∼50 μm), CdS (∼45 μm), Au and In dots (∼5 μm) were deposited on the cellulose using appropriate stainless-steel masks to obtain the requisite diode structures. The band gaps of the CdTe and CdS layers were ∼1.55 eV and ∼1.45 eV, respectively. Current-voltage (I-V) characteristics of the paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diodes were recorded at room temperature. Ideality factor (<em>n</em>), series resistance (<em>R</em><sub><em>S</em></sub>) and barrier height (φ<sub>b</sub>) of the respective diodes were computed. The barrier height (φ<sub>b</sub>) and ideality factor (<em>n</em>) computed from current-voltage characteristics were found to be 0.74 eV and 1.8, respectively at room temperature. Series resistance and φ<sub>b</sub> computed by using Cheung-Cheung method were ∼177 Ω and ∼0.45 eV, respectively. They are comparable to the resistance derived from a modified Norde method. The fabricated diodes were reproducible and stable for a few months. These diode structures were tested in an open environment at room temperature and showed no noticeable ageing effect.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 214-223"},"PeriodicalIF":2.4,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-05DOI: 10.1016/j.cap.2024.10.003
Seungchul Kim
We have demonstrated that the electronic structures of interfaces between semiconductors, dislocations in solids, and real-size quantum dots—which are challenging to simulate due to the large number of atoms involved—can be calculated in a cost-effective and accurate manner through the implementation of the GGA-1/2 formalism with a pseudo-atomic orbital (PAO) basis. The band offsets, particularly those of the valence bands, of four interfaces (InAs/AlSb, ZnSe/ZnS, GaN/SiO2, and anatase/rutile) and the light absorption spectrum of a ZnSe/ZnS core/shell quantum dot with a diameter of 4.9 nm and the redshift due to the shell were accurately reproduced. The combination of the PAO basis and half-occupation method represents a highly realistic approach to studying the electronic structure of semiconductor heterostructures, as it allows for the relaxation of constraints in the size of the structural model while accurately predicting band edge positions.
{"title":"Accurate and efficient electronic structure calculations of semiconductor heterostructures using GGA-1/2 formalism","authors":"Seungchul Kim","doi":"10.1016/j.cap.2024.10.003","DOIUrl":"10.1016/j.cap.2024.10.003","url":null,"abstract":"<div><div>We have demonstrated that the electronic structures of interfaces between semiconductors, dislocations in solids, and real-size quantum dots—which are challenging to simulate due to the large number of atoms involved—can be calculated in a cost-effective and accurate manner through the implementation of the GGA-1/2 formalism with a pseudo-atomic orbital (PAO) basis. The band offsets, particularly those of the valence bands, of four interfaces (InAs/AlSb, ZnSe/ZnS, GaN/SiO<sub>2</sub>, and anatase/rutile) and the light absorption spectrum of a ZnSe/ZnS core/shell quantum dot with a diameter of 4.9 nm and the redshift due to the shell were accurately reproduced. The combination of the PAO basis and half-occupation method represents a highly realistic approach to studying the electronic structure of semiconductor heterostructures, as it allows for the relaxation of constraints in the size of the structural model while accurately predicting band edge positions.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 196-205"},"PeriodicalIF":2.4,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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