Current Applied Physics最新文献

英文中文

Novel green synthesis approach of Fe3O4-MSN/Ag nanocomposite using moringa oleifera extract for magnetic hyperthermia applications 利用油杉提取物合成磁性热疗用 Fe3O4-MSN/Ag 纳米复合材料的新型绿色合成方法

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-16 DOI: 10.1016/j.cap.2024.10.010

Mahardika Yoga Darmawan , Marhan Ebit Saputra , Leni Rumiyanti , Nurul Imani Istiqomah , Nanang Adrianto , Rivaldo Marsel Tumbelaka , Harlina Ardiyanti , Nur Aji Wibowo , Nining Sumawati Asri , Julia Angel , Hasniah Aliah , Ari Dwi Nugraheni , Edi Suharyadi

Cancer is a major global health problem, and finding effective treatments is a challenging task. Magnetic hyperthermia is one of the promising alternative cancer treatments because the heat generated is localized and safe for healthy cells. Magnetite (Fe₃O₄) nanoparticles are commonly used as heat generating materials. This study focuses on the development of Fe₃O₄ nanoparticles through green synthesis using Moringa oleifera extract. Fe₃O₄ is coated with silver nanoparticles using mesoporous silica. Silver (Ag) nanoparticles are used because of their biocompatibility while mesoporous silica nanoparticles (MSN) because of their ability to carry other agents and their relatively low toxicity. X-ray diffraction revealed that the addition of Ag reduced the average crystallite size of the Fe₃O₄-MSN/Ag composite to around 15.7–16.1 nm, with an average particle size of 21.3 nm. The presence of magnetite and silver was confirmed by electron microscopy techniques. Magnetic tests showed that the composite had a saturation magnetization of about 10 emu/g. Heat generation tests showed that the composite could increase the temperature by more than 5 °C, exceeding the minimum temperature required for effective hyperthermia treatment, with a specific absorption rate (SAR) of 1.59 W/g at a field strength of 150 Oe and a frequency of 20 kHz. The effective SAR value obtained is almost 5 times greater compared to commercial Fe₃O₄. In vitro cytotoxicity tests utilize NIH3T3 fibroblasts showed that Fe₃O₄-MSN/Ag was non-toxic. These results indicate that this magnetic nanocomposite has significantly improved structural, optical, magnetic, and thermal properties, making it a promising candidate for cancer hyperthermia treatment.

癌症是全球主要的健康问题，而寻找有效的治疗方法是一项具有挑战性的任务。磁热疗是一种很有前景的癌症替代治疗方法，因为它产生的热量是局部的，对健康细胞是安全的。磁铁矿（Fe₃O₄）纳米粒子通常用作发热材料。本研究的重点是利用油杉提取物通过绿色合成技术开发出纳米磁铁矿颗粒。利用介孔二氧化硅将铁₃O₄包覆在银纳米粒子上。使用银（Ag）纳米粒子是因为它们具有生物相容性，而介孔二氧化硅纳米粒子（MSN）是因为它们能够携带其他制剂，而且毒性相对较低。X 射线衍射显示，加入银后，Fe₃O₄-MSN/Ag 复合材料的平均结晶尺寸减小到 15.7-16.1 nm 左右，平均粒径为 21.3 nm。电子显微镜技术证实了磁铁矿和银的存在。磁性测试表明，复合材料的饱和磁化率约为 10 emu/g。发热测试表明，在 150 Oe 的场强和 20 kHz 的频率下，该复合材料的比吸收率（SAR）为 1.59 W/g，可将温度提高 5 °C 以上，超过了有效热疗所需的最低温度。与商用铁₃O₄相比，获得的有效 SAR 值几乎高出 5 倍。利用 NIH3T3 成纤维细胞进行的体外细胞毒性测试表明，Fe₃O₄-MSN/Ag 无毒。这些结果表明，这种磁性纳米复合材料的结构、光学、磁性和热性能都得到了显著改善，有望成为癌症热疗的候选材料。

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引用次数: 0

Hierarchical Bi2S3 nanothorn on ZnO core-branch photoelectrode: A promising heterostructure for enhanced photoelectrochemical water splitting ZnO 核支光电电极上的分层 Bi2S3 纳米刺：用于增强光电化学水分离的前景广阔的异质结构

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-15 DOI: 10.1016/j.cap.2024.10.009

S. Sadhasivam, T. Sadhasivam, K. Selvakumar, T.H. Oh

The zinc oxide semiconductor associated with defects and their recombination effect restricts the development of photoelectrode for hydrogen evolution. The combination of semiconductor hetero-junction and hierarchical interface of ZnO/Bi₂S₃ photoelectrode fabricated. In this study, heterostructure ZnO/Bi₂S₃ were studied as a photoanode with their impact of oxygen vacancy in ZnO nano rods. The trace of the Bi₂S₃ on the ZnO was studied and compared with pristine and oxygen annealed ZnO nano rods. The photon-luminescence studies reveal that shallow donor and acceptor defect in ZnO and restricted by Bi₂S₃ heterostructure. The less defect contemplations in the photoanodes accelerates up electron and hole migration leading to significant built-in potential and photocurrent generation. The appropriate method has been followed to architype less interfacial defect in ZnO(300)/Bi₂S₃ photoanode and boosted the photo-redox reactions for efficient hydrogen evolution. The photoanode exhibits substantial properties of photocurrent density 0.33 mA/cm², charge transfer resistance of 700 Ω cm² and higher inbuilt potential of −0.88V vs Ag/AgCl with 0.17 % applied bias photon to electron conversion efficiency and 0.11 % solar to hydrogen conversion efficiency.

氧化锌半导体的缺陷及其重组效应限制了氢气进化光电极的发展。结合半导体异质结和 ZnO/Bi2S3 光电极的分层界面，制造出了 ZnO/Bi2S3 光电极。在这项研究中，研究了异质结构 ZnO/Bi2S3 作为光阳极与 ZnO 纳米棒中氧空位的影响。研究了 Bi2S3 在 ZnO 上的痕迹，并与原始 ZnO 纳米棒和氧退火 ZnO 纳米棒进行了比较。光子发光研究表明，氧化锌中的供体和受体缺陷较浅，并受到 Bi2S3 异质结构的限制。光阳极中较少的缺陷可加速电子和空穴迁移，从而产生显著的内置电势和光电流。我们采用适当的方法在 ZnO(300)/Bi2S3 光阳极中形成了较少的界面缺陷，促进了光氧化还原反应，实现了高效的氢气进化。该光电阳极的光电流密度为 0.33 mA/cm2，电荷转移电阻为 700 Ω cm2，与 Ag/AgCl 相比，内置电位为-0.88V，外加偏压光子到电子的转换效率为 0.17%，太阳能到氢气的转换效率为 0.11%。

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引用次数: 0

Poly(aniline)-multiwall carbon nanotube (PANI@MWCNT) composite as high-cost Pt free counter electrode for dye-sensitized solar cells 聚（苯胺）-多壁碳纳米管（PANI@MWCNT）复合材料作为染料敏化太阳能电池的高成本无铂对电极

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-09 DOI: 10.1016/j.cap.2024.10.006

Alagumalai Manimekalai , Kuppu Sakthi Velu , Sonaimuthu Mohandoss , Rizwan Wahab , Naushad Ahmad , Jeong Hyun Seo , Seho Sun , Yong Rok Lee

In this study, we synthesized a poly (aniline)-multiwall carbon nanotube (PANI@MWCNT) composite for use as a counter electrode (CE) in dye-sensitized solar cells. Moreover, FE-SEM and HR-TEM images of PANI@MWCNT revealed carbon nanotube/ropes embedded in the polymer matrix. An X-ray diffraction pattern confirmed the amorphous nature of the composite. Further, Electrochemical impedance spectroscopy studies indicated a charge transport resistance value (R_ct) of 4.36 KΩ for PANI@MWCNT. CV studies demonstrated improved electrocatalytic performance and faster redox behavior in the PANI@MWCNT composite. BET analysis measured the pore size of the as-prepared composite to be 15–50 nm. Subsequently, the as-synthesized PANI, PANT@MWNCT, pristine MWCNT, and platinum were evaluated as CEs in DSSCs using a polyethylene oxide polymer-based liquid electrolyte and a TiO₂ nanocrystalline photoanode. Among these CEs, the PANI@MWCNT CE exhibited an efficiency of 8.07 %, and the stability test indicated that the as-prepared composite CE retained 7.81 % efficiency after 15 days.

在这项研究中，我们合成了一种聚（苯胺）-多壁碳纳米管（PANI@MWCNT）复合材料，可用作染料敏化太阳能电池的对电极（CE）。此外，PANI@MWCNT 的 FE-SEM 和 HR-TEM 图像显示了聚合物基体中嵌入的碳纳米管/根。X 射线衍射图样证实了该复合材料的无定形性质。此外，电化学阻抗光谱研究表明，PANI@MWCNT 的电荷传输电阻值 (Rct) 为 4.36 KΩ。CV 研究表明，PANI@MWCNT 复合材料的电催化性能得到改善，氧化还原行为更快。BET 分析测得制备的复合材料的孔径为 15-50 nm。随后，使用基于聚环氧乙烷聚合物的液态电解质和 TiO2 纳米晶光电阳极，对合成的 PANI、PANT@MWNCT、原始 MWCNT 和铂作为 DSSC 中的 CE 进行了评估。在这些 CE 中，PANI@MWCNT CE 的效率为 8.07%，稳定性测试表明制备的复合 CE 在 15 天后仍能保持 7.81% 的效率。

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引用次数: 0

High magnetic susceptibility-based vanadate tellurite glasses for magneto-optical device applications 用于磁光器件应用的基于高磁感的钒碲玻璃

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-06 DOI: 10.1016/j.cap.2024.10.005

Yamagouni Paramesh Goud , Nirlakalla Ravi

Tellurite glasses modified with V₂O₅, Fe₂O₃, and Na₂O (TVFN), along with Sm³⁺-doped Gd₂O₃ and Sb₂O₃ based tellurite (TVGSNSm) glasses evaluated for various properties. The thermal stability of these glasses, with a critical value of 105 °C advantageous to luminescence. Fourier transform infrared and micro-Raman bands were identified at 669, 745, 859, 943, and 1003 cm⁻¹ in the deconvolution. Electron spin resonance revealed a signal at a magnetic field of 340.75 mT (g = 1.77). The magnetic hysteresis of TVFN glasses from a vibrating sample magnetometer which possess coercivity 62 mT and remanence 1.5х10⁻² Am²/kg with a saturation magnetization 0.1975 A m²/kg and magnetic susceptibility as high as 0.1328. The magnetic nature confirmed by superconducting quantum interference device. Photoluminescence of Sm³⁺-doped TVGSNSm glasses excited by 408 nm showed 646 nm (red-orange) dominated emission band over the 603 nm band. These findings underscore the potential of TVFN glasses for applications in magneto-optical devices.

用 V2O5、Fe2O3 和 Na2O（TVFN）改性的碲玻璃以及基于 Sm3+ 掺杂 Gd2O3 和 Sb2O3 的碲玻璃（TVGSNSm）的各种性能进行了评估。这些玻璃的热稳定性临界值为 105 °C，有利于发光。傅立叶变换红外波段和微拉曼波段在解卷积中被确定为 669、745、859、943 和 1003 cm-1。电子自旋共振在 340.75 mT 的磁场（g = 1.77）下显示出一个信号。振动样品磁力计显示了 TVFN 玻璃的磁滞现象，其矫顽力为 62 mT，剩磁为 1.5х10-2 Am2/kg，饱和磁化率为 0.1975 A m2/kg，磁感应强度高达 0.1328。超导量子干涉装置证实了其磁性。掺杂 Sm3+ 的 TVGSNSm 玻璃在 408 纳米波长的激发下发出的光致发光显示，646 纳米波长（橘红色）的发射带超过了 603 纳米波长的发射带。这些发现凸显了 TVFN 玻璃在磁光器件中的应用潜力。

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引用次数: 0

Realization of diode structures on paper: An example of papertronics 在纸上实现二极管结构：纸上电子学的一个实例

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-05 DOI: 10.1016/j.cap.2024.10.001

Rajkumar Dey , Shamima Hussain , A.K. Pal

A possibility of fabricating paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diode structures has been demonstrated here. Ag (∼5 μm), CdTe (∼50 μm), CdS (∼45 μm), Au and In dots (∼5 μm) were deposited on the cellulose using appropriate stainless-steel masks to obtain the requisite diode structures. The band gaps of the CdTe and CdS layers were ∼1.55 eV and ∼1.45 eV, respectively. Current-voltage (I-V) characteristics of the paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diodes were recorded at room temperature. Ideality factor (n), series resistance (R_S) and barrier height (φ_b) of the respective diodes were computed. The barrier height (φ_b) and ideality factor (n) computed from current-voltage characteristics were found to be 0.74 eV and 1.8, respectively at room temperature. Series resistance and φ_b computed by using Cheung-Cheung method were ∼177 Ω and ∼0.45 eV, respectively. They are comparable to the resistance derived from a modified Norde method. The fabricated diodes were reproducible and stable for a few months. These diode structures were tested in an open environment at room temperature and showed no noticeable ageing effect.

本文展示了制造纸/银/碲化镉/金肖特基二极管和纸/银/碲化镉/镉硒/铟 p-n 结二极管结构的可能性。使用适当的不锈钢掩膜在纤维素上沉积银（5 μm）、碲化镉（50 μm）、硒化镉（45 μm）、金和铟点（5 μm），以获得所需的二极管结构。碲化镉层和硒化镉层的带隙分别为 1.55 eV 和 1.45 eV。室温下记录了纸/银/CdTe/金肖特基二极管和纸/银/CdTe/CdS/铟 p-n 结二极管的电流-电压（I-V）特性。计算了各二极管的理想因子 (n)、串联电阻 (RS) 和势垒高度 (φb)。根据电流-电压特性计算得出的势垒高度（φb）和理想化系数（n）在室温下分别为 0.74 eV 和 1.8。用 Cheung-Cheung 方法计算出的串联电阻和φb 分别为 177 Ω 和 0.45 eV。这两个数值与改进 Norde 方法得出的电阻值相当。制作的二极管在几个月内都是可重复和稳定的。这些二极管结构在室温下的开放环境中进行了测试，没有显示出明显的老化效应。

{"title":"Realization of diode structures on paper: An example of papertronics","authors":"Rajkumar Dey , Shamima Hussain , A.K. Pal","doi":"10.1016/j.cap.2024.10.001","DOIUrl":"10.1016/j.cap.2024.10.001","url":null,"abstract":"<div><div>A possibility of fabricating paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diode structures has been demonstrated here. Ag (∼5 μm), CdTe (∼50 μm), CdS (∼45 μm), Au and In dots (∼5 μm) were deposited on the cellulose using appropriate stainless-steel masks to obtain the requisite diode structures. The band gaps of the CdTe and CdS layers were ∼1.55 eV and ∼1.45 eV, respectively. Current-voltage (I-V) characteristics of the paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diodes were recorded at room temperature. Ideality factor (n), series resistance (RS) and barrier height (φb) of the respective diodes were computed. The barrier height (φb) and ideality factor (n) computed from current-voltage characteristics were found to be 0.74 eV and 1.8, respectively at room temperature. Series resistance and φb computed by using Cheung-Cheung method were ∼177 Ω and ∼0.45 eV, respectively. They are comparable to the resistance derived from a modified Norde method. The fabricated diodes were reproducible and stable for a few months. These diode structures were tested in an open environment at room temperature and showed no noticeable ageing effect.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 214-223"},"PeriodicalIF":2.4,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Accurate and efficient electronic structure calculations of semiconductor heterostructures using GGA-1/2 formalism 利用 GGA-1/2 形式对半导体异质结构进行精确高效的电子结构计算

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-05 DOI: 10.1016/j.cap.2024.10.003

Seungchul Kim

We have demonstrated that the electronic structures of interfaces between semiconductors, dislocations in solids, and real-size quantum dots—which are challenging to simulate due to the large number of atoms involved—can be calculated in a cost-effective and accurate manner through the implementation of the GGA-1/2 formalism with a pseudo-atomic orbital (PAO) basis. The band offsets, particularly those of the valence bands, of four interfaces (InAs/AlSb, ZnSe/ZnS, GaN/SiO₂, and anatase/rutile) and the light absorption spectrum of a ZnSe/ZnS core/shell quantum dot with a diameter of 4.9 nm and the redshift due to the shell were accurately reproduced. The combination of the PAO basis and half-occupation method represents a highly realistic approach to studying the electronic structure of semiconductor heterostructures, as it allows for the relaxation of constraints in the size of the structural model while accurately predicting band edge positions.

我们已经证明，半导体之间的界面、固体中的位错以及实际尺寸的量子点的电子结构--由于涉及大量原子而难以模拟--可以通过使用伪原子轨道（PAO）基础实施 GGA-1/2 形式化，以低成本、高精度的方式计算出来。四种界面（InAs/AlSb、ZnSe/ZnS、GaN/SiO2 和锐钛矿/钌）的带偏移，特别是价带的偏移，以及直径为 4.9 nm 的 ZnSe/ZnS 核/壳量子点的光吸收光谱和壳引起的红移都得到了精确再现。PAO 基和半占位法的结合是研究半导体异质结构电子结构的一种高度现实的方法，因为它允许在精确预测带边位置的同时放宽对结构模型尺寸的限制。

引用次数: 0

First-principles study on lanthanide dopants in BaTiO3 关于 BaTiO3 中镧系元素掺杂物的第一性原理研究

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-05 DOI: 10.1016/j.cap.2024.10.002

Hyungwoo Lee , Minae Ouk , Inseo Kim , Biyi Kim , Seok Bae , Sungwon David Roh , Isao Tanaka , Minseok Choi

Using first-principles calculation based on density-functional theory and density-functional perturbation theory, the microscopic structure and dielectric properties of Lanthanide (Ln) doped BaTiO₃ are investigated. The doped Ln atoms exhibit significant displacement from Ba sites for charge compensation, forming off-centered configurations. This displacement is more pronounced for elements with smaller ionic radii. The change in ionic dielectric constant is strongly correlated with Ln displacement and Ln ion radius. As Ln displacement (ionic radius) increases (decreases), Ln-doped BaTiO₃ has a higher ionic dielectric constant. However, regardless of the Ln species, the added Ln reduces the ionic dielectric constant compared to pristine BaTiO₃.

通过基于密度泛函理论和密度泛函扰动理论的第一性原理计算，研究了掺杂镧系元素（Ln）的 BaTiO3 的微观结构和介电性能。掺杂的镧系元素原子在电荷补偿时会从钡位点发生显著位移，形成偏心构型。对于离子半径较小的元素，这种位移更为明显。离子介电常数的变化与 Ln 位移和 Ln 离子半径密切相关。随着 Ln 位移（离子半径）的增大（减小），掺 Ln 的 BaTiO3 具有更高的离子介电常数。然而，与原始 BaTiO3 相比，无论掺杂哪种 Ln，添加的 Ln 都会降低离子介电常数。

引用次数: 0

Magnetocaloric effect of LiErP4O12 single crystal exhibiting competing ferromagnetic and anti-ferromagnetic interactions 表现出竞争性铁磁和反铁磁相互作用的 LiErP4O12 单晶的磁ocaloric 效应

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-04 DOI: 10.1016/j.cap.2024.10.004

Dimitar N. Petrov , J. Ćwik , H.N. Nhat , D.-H. Kim , T.L. Phan

In this paper, we discuss the magnetic behavior and magnetocaloric effect of lithium erbium tetraphosphate (LiErP₄O₁₂) single crystal in the temperature range 2–85 K under magnetic fields up to 50 kOe. Detailed investigation of the temperature-dependent magnetization M(T) proves an existence of magnetic ordering below T_m, which has been estimated as a minimum in the dM/dT vs. T dependence. Above T_m, LiErP₄O₁₂ possesses paramagnetic behavior and its magnetic susceptibility follows the Curie-Weiss law giving a higher value of the effective magnetic moment of Er³⁺ compared to the theoretical one. This could be due to the Kramers spin degeneracy and the Stark structure of multiplets. Under an applied field H = 50 kOe, the maximum value of the magnetic-entropy change at 2 K reaches about 15 J/kgK, corresponding to a relative-cooling-power value of ∼343 J/kg. Assessments of the magnetic ordering exponent n and N(T, H) data prove LiErP₄O₁₂ exhibiting short-range magnetic order. Due to the absence of magnetic hysteresis and large magnetocaloric response, we believe that LiErP₄O₁₂ could be a promising candidate for magnetic-cooling applications in liquefying hydrogen and ³He isotope.

本文讨论了四磷酸铒锂（LiErP4O12）单晶体在磁场高达 50 kOe 的情况下，在 2-85 K 温度范围内的磁性行为和磁致效应。对随温度变化的磁化 M(T) 的详细研究证明，在低于 Tm 时存在磁有序性，这被估计为 dM/dT 与 T 的关系中的最小值。高于 Tm 时，LiErP4O12 具有顺磁性，其磁感应强度遵循居里-韦斯定律，与理论值相比，Er3+ 的有效磁矩值更高。这可能是由于克拉默自旋退化和多子的斯塔克结构造成的。在外加磁场 H = 50 kOe 的条件下，2 K 时的磁熵变化最大值约为 15 J/kgK，对应的相对冷却功率值为 ∼343 J/kg。磁有序指数 n 和 N（T，H）数据的评估证明 LiErP4O12 具有短程磁有序性。由于LiErP4O12不存在磁滞和较大的磁热反应，我们认为它有希望成为液化氢和3He同位素的磁制冷应用的候选材料。

{"title":"Magnetocaloric effect of LiErP4O12 single crystal exhibiting competing ferromagnetic and anti-ferromagnetic interactions","authors":"Dimitar N. Petrov , J. Ćwik , H.N. Nhat , D.-H. Kim , T.L. Phan","doi":"10.1016/j.cap.2024.10.004","DOIUrl":"10.1016/j.cap.2024.10.004","url":null,"abstract":"<div><div>In this paper, we discuss the magnetic behavior and magnetocaloric effect of lithium erbium tetraphosphate (LiErP4O12) single crystal in the temperature range 2–85 K under magnetic fields up to 50 kOe. Detailed investigation of the temperature-dependent magnetization M(T) proves an existence of magnetic ordering below Tm, which has been estimated as a minimum in the dM/dT vs. T dependence. Above Tm, LiErP4O12 possesses paramagnetic behavior and its magnetic susceptibility follows the Curie-Weiss law giving a higher value of the effective magnetic moment of Er3+ compared to the theoretical one. This could be due to the Kramers spin degeneracy and the Stark structure of multiplets. Under an applied field H = 50 kOe, the maximum value of the magnetic-entropy change at 2 K reaches about 15 J/kgK, corresponding to a relative-cooling-power value of ∼343 J/kg. Assessments of the magnetic ordering exponent n and N(T, H) data prove LiErP4O12 exhibiting short-range magnetic order. Due to the absence of magnetic hysteresis and large magnetocaloric response, we believe that LiErP4O12 could be a promising candidate for magnetic-cooling applications in liquefying hydrogen and 3He isotope.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 224-229"},"PeriodicalIF":2.4,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Joule heat release at surface irregularities 表面不规则处焦耳热释放增强

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-10-02 DOI: 10.1016/j.cap.2024.09.013

G.Sh. Boltachev, P.A. Russkikh, S.A. Chaikovsky

The heat release that occurs in a cylindrical conductor carrying an alternating current is analyzed for the cases when the conductor has axisymmetric surface irregularities of one of three types: local bumps, local pits, and sequences of alternating bumps and pits (wavy irregularities). The magnetic field and current density distributions over the conductor cross section have been simulated. The simulation parameters were chosen to match the conditions of experiments on the generation of strong magnetic fields. However, due to the analysis of the initial heating stage, the problem is solved neglecting the temperature dependence of the resistivity of the material. A multiple increase in heat release power in the vicinity of a surface irregularity has been revealed for the three types of irregularities.

针对导体轴对称表面存在以下三种不规则情况之一的情况，分析了携带交流电的圆柱形导体中发生的热释放：局部凸起、局部凹坑以及凸起和凹坑交替序列（波浪形不规则）。对导体横截面上的磁场和电流密度分布进行了模拟。模拟参数的选择符合强磁场产生实验的条件。然而，由于要对初始加热阶段进行分析，因此在解决问题时忽略了材料电阻率的温度依赖性。三种不规则表面的热释放功率在不规则表面附近呈倍数增加。

引用次数: 0

Piezoelectric flexible generator based on Mn-doped ZnO/PVDF composite films for energy harvesting application 基于掺锰 ZnO/PVDF 复合薄膜的压电柔性发电机的能量采集应用

IF 2.4 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Current Applied Physics

Pub Date : 2024-09-27 DOI: 10.1016/j.cap.2024.09.012

Aman Kumar, Richa Sharma

A flexible piezoelectric energy harvesting device was manufactured using Mn-doped ZnO (MnZ)/poly (vinylidene fluoride) (PVDF) composite film of various proportions of MnZ particles (5 wt%, 10 wt%, 20 wt% and 30 wt%) within the PVDF matrix. The phase formation, crystallinity and morphological characteristics of the fabricated composite films were analysed with the help of Fourier transform infrared (FTIR), X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM). The piezoelectric performance of the constructed piezoelectric generator (PEG) device was measured by applying force on its surface which produced a significantly high open-circuit voltage of 344V and power density of 4.53 mW/cm². Besides, these lead-free composite devices demonstrated remarkable sensitivity for human body motion detection in punching, finger bending, and wrist bending. Furthermore, practical usage of the fabricated PEG device was shown by powering devices like wristwatches, digital thermometers and glowing 20 light-emitting diodes (LEDs) of different colours.

使用掺锰氧化锌（MnZ）/聚偏二氟乙烯（PVDF）复合膜制造了一种柔性压电能量收集装置，在 PVDF 基体中掺入了不同比例的 MnZ 颗粒（5 wt%、10 wt%、20 wt% 和 30 wt%）。利用傅立叶变换红外（FTIR）、X 射线衍射（XRD）和扫描电子显微镜（SEM）分析了所制复合薄膜的相形成、结晶度和形态特征。通过在其表面施加力，测量了所构建的压电发生器 (PEG) 器件的压电性能，其开路电压高达 344V，功率密度为 4.53 mW/cm2。此外，这些无铅复合器件在打孔、手指弯曲和手腕弯曲等人体运动检测方面表现出了极高的灵敏度。此外，通过为手表、数字温度计和 20 个不同颜色的发光二极管（LED）等设备供电，展示了所制造的 PEG 器件的实际用途。

引用次数: 0

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