The degradation of a membrane electrode assembly (MEA) after an actual driving test was analyzed, and its mechanism was compared with that of a load-cycle durability test in a laboratory. MEA samples were extracted from an FC stack of a Toyota MIRAI 2014th model which had been operated in actual driving of 200,000 km for approximately 6000 h. The degradation distribution across the MEA plane was found to be insignificant. The electrolyte membrane did not show significant degradation affecting its properties following the durability tests. The MEA performance degradation is primarily attributed to the deterioration of the catalyst activity and oxygen transport properties in the catalyst layer, which is mainly caused by catalyst coarsening. The degradation was well simulated by the NEDO load-cycle durability test of 30,000 cycles. The evaluation results are applicable to validation of AST protocols and model-simulation of MEA degradation.
{"title":"Comparison of MEA Degradation through FCV Actual Driving Test and Load-Cycle Durability Test","authors":"Shota Katayama, Masashi Matsumoto, Hideto Imai, Takahiko Asaoka, Kazuki Amemiya","doi":"10.1149/11204.0157ecst","DOIUrl":"https://doi.org/10.1149/11204.0157ecst","url":null,"abstract":"The degradation of a membrane electrode assembly (MEA) after an actual driving test was analyzed, and its mechanism was compared with that of a load-cycle durability test in a laboratory. MEA samples were extracted from an FC stack of a Toyota MIRAI 2014th model which had been operated in actual driving of 200,000 km for approximately 6000 h. The degradation distribution across the MEA plane was found to be insignificant. The electrolyte membrane did not show significant degradation affecting its properties following the durability tests. The MEA performance degradation is primarily attributed to the deterioration of the catalyst activity and oxygen transport properties in the catalyst layer, which is mainly caused by catalyst coarsening. The degradation was well simulated by the NEDO load-cycle durability test of 30,000 cycles. The evaluation results are applicable to validation of AST protocols and model-simulation of MEA degradation.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper theoretical benchmarking of semi-vertical and vertical gallium nitride (GaN) MOSFETs with rated voltage of 1.2 kV to 3.3 kV is performed against silicon carbide (SiC) devices. Limitations of the semi-vertical and vertical state-of-the-art GaN structures have been investigated by simulations. Specific design features and technology requirements for realization of high voltage vertical GaN MOSFETs are discussed and implemented in simulated structures. The main modifications to the structures are reduced cell pitch and introduction of electric field shielding implantation and thick oxide at the gate trench bottom and p-type implanted junction termination. The main findings are: (a) specific on-resistance of vertical GaN devices is 75% and 40% of that for 1.2 kV and 3.3 kV SiC MOSFETs, respectively, (b) semi-vertical GaN show no advantage over SiC MOSFETs for medium and high voltage devices over 1 kV, (c) vertical GaN has potential advantage for high and ultra-high voltage devices.
{"title":"(Invited) Benchmarking of Beyond the State-of-the-Art Vertical GaN Devices","authors":"Ulf Gisslander, Mietek Bakowski","doi":"10.1149/11202.0023ecst","DOIUrl":"https://doi.org/10.1149/11202.0023ecst","url":null,"abstract":"In this paper theoretical benchmarking of semi-vertical and vertical gallium nitride (GaN) MOSFETs with rated voltage of 1.2 kV to 3.3 kV is performed against silicon carbide (SiC) devices. Limitations of the semi-vertical and vertical state-of-the-art GaN structures have been investigated by simulations. Specific design features and technology requirements for realization of high voltage vertical GaN MOSFETs are discussed and implemented in simulated structures. The main modifications to the structures are reduced cell pitch and introduction of electric field shielding implantation and thick oxide at the gate trench bottom and p-type implanted junction termination. The main findings are: (a) specific on-resistance of vertical GaN devices is 75% and 40% of that for 1.2 kV and 3.3 kV SiC MOSFETs, respectively, (b) semi-vertical GaN show no advantage over SiC MOSFETs for medium and high voltage devices over 1 kV, (c) vertical GaN has potential advantage for high and ultra-high voltage devices.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Grace C. Anderson, Siddharth Rajupet, John G. Petrovick, Douglas I. Kushner, Alexis T. Bell, Adam Z. Weber
Microelectrode measurements using a polycrystalline platinum microelectrode were used to simulate the membrane/electrode interface of a membrane-electrode-assembly (MEA) architecture. The proton activity for the hydrogen-evolution reaction (HER) was evaluated for 40, 60, and 80% relative humidity. Proton activity was calculated to be 0.5, 1.0 and 2.0 for 40, 60, and 80% relative humidity, respectively, using open circuit potential measurements between Nafion 211 and 1 molal HClO 4 . The fraction of protons which dissociate at a given relative humidity condition appears to be a distinctive factor in proton activity for Nafion 211 compared to an aqueous electrolyte. The microelectrode measurements exhibited a Tafel slope of ~120 mV/dec, similar to that observed for platinum in MEA systems, demonstrating that kinetic measurements made with microelectrodes can be representative of MEA kinetics.
采用多晶铂微电极进行微电极测量，模拟膜电极组装(MEA)结构的膜/电极界面。在相对湿度为40%、60%和80%时，对析氢反应(HER)的质子活性进行了评价。在相对湿度为40、60和80%时，质子活度分别计算为0.5、1.0和2.0，使用开路电位测量Nafion 211和1mol / l HClO 4。与水电解质相比，在给定相对湿度条件下解离的质子比例似乎是Nafion 211质子活性的一个独特因素。微电极测量的Tafel斜率为~120 mV/dec，与MEA系统中铂的Tafel斜率相似，表明用微电极进行的动力学测量可以代表MEA动力学。
{"title":"Exploring Proton Activity at the Membrane/Electrode Interface with Microelectrodes","authors":"Grace C. Anderson, Siddharth Rajupet, John G. Petrovick, Douglas I. Kushner, Alexis T. Bell, Adam Z. Weber","doi":"10.1149/11204.0323ecst","DOIUrl":"https://doi.org/10.1149/11204.0323ecst","url":null,"abstract":"Microelectrode measurements using a polycrystalline platinum microelectrode were used to simulate the membrane/electrode interface of a membrane-electrode-assembly (MEA) architecture. The proton activity for the hydrogen-evolution reaction (HER) was evaluated for 40, 60, and 80% relative humidity. Proton activity was calculated to be 0.5, 1.0 and 2.0 for 40, 60, and 80% relative humidity, respectively, using open circuit potential measurements between Nafion 211 and 1 molal HClO 4 . The fraction of protons which dissociate at a given relative humidity condition appears to be a distinctive factor in proton activity for Nafion 211 compared to an aqueous electrolyte. The microelectrode measurements exhibited a Tafel slope of ~120 mV/dec, similar to that observed for platinum in MEA systems, demonstrating that kinetic measurements made with microelectrodes can be representative of MEA kinetics.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135199839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ali Roshanghias, Jaroslaw Kaczynski, Augusto Rodrigues, Martina Hübner, Markus Zauner, Giovanna Grosso, Nikolai Andrianov, Muhammad Khan, Thomas Grömer, Tino Fuchs, Alfred Binder
Nuclear-magnetic-resonance (NMR) gyroscopes based on MEMS vapor cell technology are currently being investigated worldwide and show superior advantages over current MEMS gyroscopes. However, there are still challenges in the upscaling and further deployment of NMR gyroscopes, due to the extremely high cost of the required gases (i.e., 129Xe, 131Xe), size, and high power consumption. To tackle these bottlenecks, in this study, a miniaturized, chip-scale, and low-cost NMR gyroscope has been conceptualized and fabricated. Here, a cost-effective and scalable filling of MEMS vapor cells with Xe gas was developed via an innovative microfabrication and wafer stacking process flow. By utilizing ultra-thin glass wafers, Taiko-processed silicon wafers, and an external gas flow system integrated into the wafer bonder, a sequential anodic bonding technique is executed to create a hermetically sealed Xe gas-filled chamber at minimal Xe consumption during the filling process.
{"title":"Efficient Xe Filling of MEMS Vapor Cells Empowered by Customized Triple Stack Wafer Bond Processing","authors":"Ali Roshanghias, Jaroslaw Kaczynski, Augusto Rodrigues, Martina Hübner, Markus Zauner, Giovanna Grosso, Nikolai Andrianov, Muhammad Khan, Thomas Grömer, Tino Fuchs, Alfred Binder","doi":"10.1149/11203.0221ecst","DOIUrl":"https://doi.org/10.1149/11203.0221ecst","url":null,"abstract":"Nuclear-magnetic-resonance (NMR) gyroscopes based on MEMS vapor cell technology are currently being investigated worldwide and show superior advantages over current MEMS gyroscopes. However, there are still challenges in the upscaling and further deployment of NMR gyroscopes, due to the extremely high cost of the required gases (i.e., 129Xe, 131Xe), size, and high power consumption. To tackle these bottlenecks, in this study, a miniaturized, chip-scale, and low-cost NMR gyroscope has been conceptualized and fabricated. Here, a cost-effective and scalable filling of MEMS vapor cells with Xe gas was developed via an innovative microfabrication and wafer stacking process flow. By utilizing ultra-thin glass wafers, Taiko-processed silicon wafers, and an external gas flow system integrated into the wafer bonder, a sequential anodic bonding technique is executed to create a hermetically sealed Xe gas-filled chamber at minimal Xe consumption during the filling process.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135243256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The gas diffusion layer (GDL) used in a PEFC is thicker than the electrode catalyst layer and electrolyte membrane. Thinning down the GDL can reduce gas diffusion resistance and volumetric power density of PEFC stacks. In this study, MPL/GDL is prepared by printing microporous layers (MPLs) on carbon meshes of several tens of micrometers thick as substrates for thin-layer GDLs. Through various current-voltage and overvoltage measurements and microstructural analysis of the cells using these thin-layer MPL/GDLs, cell performance has been improved, equivalent to that of the state of the MPL/GDL.
{"title":"Self-Supporting Microporous Layer for Polymer Electrolyte Fuel Cells","authors":"Makoto Yoshikawa, Kotaro Yamamoto, Zhiyun Noda, Masahiro Yasutake, Tatsumi Kitahara, Yuya Tachikawa, Stephen Matthew Lyth, Akari Hayashi, Junko Matsuda, Kazunari Sasaki","doi":"10.1149/11204.0083ecst","DOIUrl":"https://doi.org/10.1149/11204.0083ecst","url":null,"abstract":"The gas diffusion layer (GDL) used in a PEFC is thicker than the electrode catalyst layer and electrolyte membrane. Thinning down the GDL can reduce gas diffusion resistance and volumetric power density of PEFC stacks. In this study, MPL/GDL is prepared by printing microporous layers (MPLs) on carbon meshes of several tens of micrometers thick as substrates for thin-layer GDLs. Through various current-voltage and overvoltage measurements and microstructural analysis of the cells using these thin-layer MPL/GDLs, cell performance has been improved, equivalent to that of the state of the MPL/GDL.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135244026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To address the issue of flooding in polymer electrolyte fuel cells (PEFCs), it becomes imperative to devise an electrode structure capable of actively removing accumulated liquid water within the gas diffusion electrode (GDE). This study aimed to construct a wettability patterned electrode by applying a hydrophilic solution onto the cathode-side gas diffusion layer (GDL). Furthermore, the distribution of liquid water within the patterned electrode during PEFC operation was visualized using X-ray imaging and image processing technology. As a result, it was confirmed that the introduction of a wettability patterned electrode structure enables liquid water transport control during operation and reduces the saturation of liquid water around the hydrophilic region.
{"title":"Control of Liquid Water Transport in Cathode of PEFC Using Wettability-Patterned Electrodes","authors":"Reiya Kaneko, Vedant Chate, Kosuke Nishida","doi":"10.1149/11204.0063ecst","DOIUrl":"https://doi.org/10.1149/11204.0063ecst","url":null,"abstract":"To address the issue of flooding in polymer electrolyte fuel cells (PEFCs), it becomes imperative to devise an electrode structure capable of actively removing accumulated liquid water within the gas diffusion electrode (GDE). This study aimed to construct a wettability patterned electrode by applying a hydrophilic solution onto the cathode-side gas diffusion layer (GDL). Furthermore, the distribution of liquid water within the patterned electrode during PEFC operation was visualized using X-ray imaging and image processing technology. As a result, it was confirmed that the introduction of a wettability patterned electrode structure enables liquid water transport control during operation and reduces the saturation of liquid water around the hydrophilic region.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135244052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quentin Lomonaco, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon, Frank Fournel
Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards. This technique has been recognized by the scientific community for more than two decades now and was used for numerous reviewed applications. Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon after SAB bonding is quantified, to better understand bonding mechanisms. Soft activation parameters on hydrophobic silicon substrates yield exceptionally thin bonding interfaces with acceptable bonding energy at room temperature. According to cross-sectional Transmission Electron Microscopy imaging, a 0.53 nm thick amorphous silicon interface was achieved with an adherence energy of 1337 ± 137 J/m² measured by the Double Cantilever Beam method.
{"title":"Soft Surface Activated Bonding of Hydrophobic Silicon Substrates","authors":"Quentin Lomonaco, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon, Frank Fournel","doi":"10.1149/11203.0139ecst","DOIUrl":"https://doi.org/10.1149/11203.0139ecst","url":null,"abstract":"Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards. This technique has been recognized by the scientific community for more than two decades now and was used for numerous reviewed applications. Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon after SAB bonding is quantified, to better understand bonding mechanisms. Soft activation parameters on hydrophobic silicon substrates yield exceptionally thin bonding interfaces with acceptable bonding energy at room temperature. According to cross-sectional Transmission Electron Microscopy imaging, a 0.53 nm thick amorphous silicon interface was achieved with an adherence energy of 1337 ± 137 J/m² measured by the Double Cantilever Beam method.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135246854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
PEM fuel cells operating on reformate gases suffer from Ru crossover and its re-deposition in the cathode catalyst layer. Therefore, strategies for regeneration of Ru-poisoned ORR catalysts are needed. Here, we developed a regeneration protocol and tested this for commercial PtRu 2 /Vulcan, which represents a worst case scenario of Ru-poisoned ORR catalysts due to the high Ru content and good intermixture with Pt. Our protocol consists of two chronoamperometric cycles, namely at 1.4 V RHE for 5 minutes followed by 1.6 V RHE for 100 s. The Ru deletion as a function of the number of regeneration cycles was in-situ monitored by electrochemical CO stripping method. The mass and specific ORR activities of the recovered PtRu 2 /Vulcan increase by 6-times and 4.4-times, respectively. Very remarkably, our regeneration protocol aims to trigger the Ru dissolution by forming the RuO 4 during the OER without a negative impact on the catalytic ORR properties of Pt.
在重整气体上工作的PEM燃料电池遭受Ru交叉及其在阴极催化剂层中的再沉积。因此，需要研究ru中毒ORR催化剂的再生策略。在这里，我们开发了一种再生方案，并在商用PtRu 2 /Vulcan上进行了测试，该方案代表了钌中毒ORR催化剂的最坏情况，因为Ru含量高，与Pt的混合良好。我们的方案包括两个计时电流循环，即在1.4 V RHE下5分钟，然后在1.6 V RHE下100秒。采用电化学CO汽提法，现场监测了Ru缺失与再生循环次数的关系。回收后的PtRu 2 /Vulcan的质量和比ORR活性分别提高了6倍和4.4倍。值得注意的是，我们的再生方案旨在通过在OER过程中形成ruo4来触发Ru的溶解，而不会对Pt的催化ORR性能产生负面影响。
{"title":"Regeneration Strategies for Ruthenium-Poisoned ORR Catalysts in Reformate PEM Fuel Cells","authors":"Qiang Guo, Frédéric Hasché, Mehtap Oezaslan","doi":"10.1149/11204.0389ecst","DOIUrl":"https://doi.org/10.1149/11204.0389ecst","url":null,"abstract":"PEM fuel cells operating on reformate gases suffer from Ru crossover and its re-deposition in the cathode catalyst layer. Therefore, strategies for regeneration of Ru-poisoned ORR catalysts are needed. Here, we developed a regeneration protocol and tested this for commercial PtRu 2 /Vulcan, which represents a worst case scenario of Ru-poisoned ORR catalysts due to the high Ru content and good intermixture with Pt. Our protocol consists of two chronoamperometric cycles, namely at 1.4 V RHE for 5 minutes followed by 1.6 V RHE for 100 s. The Ru deletion as a function of the number of regeneration cycles was in-situ monitored by electrochemical CO stripping method. The mass and specific ORR activities of the recovered PtRu 2 /Vulcan increase by 6-times and 4.4-times, respectively. Very remarkably, our regeneration protocol aims to trigger the Ru dissolution by forming the RuO 4 during the OER without a negative impact on the catalytic ORR properties of Pt.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135199844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pierre Montméat, Thierry Enot, Alice Bond, Adele Thiolon, Emilie Bourjot, Frank Fournel
We propose an innovative process with a high hydrophilic contrast for die-to-wafer self-assembly bonding. Dies and target wafer bonding surfaces first undergo a photolithography process to define bonding sites with a 15 µm step. An efficient cleaning is then performed for direct bonding surface preparation. A carrier is bonded to the bonding site to temporarily protect it during the hydrophobic treatment. After it, water contact angles of 18° and 110° are measured on bonding sites and on hydrophobic area, respectively. Finally, the self-assembly process compatibility is demonstrated with 8x8 mm² dies achieving alignment accuracy of less than 1 µm and excellent bonding interface quality.
{"title":"High Cleanliness and High Hydrophobic/Hydrophilic Contrast Done by Direct Wafer Bonding for Die-to-Wafer Self-Assembly","authors":"Pierre Montméat, Thierry Enot, Alice Bond, Adele Thiolon, Emilie Bourjot, Frank Fournel","doi":"10.1149/11203.0181ecst","DOIUrl":"https://doi.org/10.1149/11203.0181ecst","url":null,"abstract":"We propose an innovative process with a high hydrophilic contrast for die-to-wafer self-assembly bonding. Dies and target wafer bonding surfaces first undergo a photolithography process to define bonding sites with a 15 µm step. An efficient cleaning is then performed for direct bonding surface preparation. A carrier is bonded to the bonding site to temporarily protect it during the hydrophobic treatment. After it, water contact angles of 18° and 110° are measured on bonding sites and on hydrophobic area, respectively. Finally, the self-assembly process compatibility is demonstrated with 8x8 mm² dies achieving alignment accuracy of less than 1 µm and excellent bonding interface quality.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Emilie Deloffre, Bassel Ayoub, Sandrine Lhostis, Florent Dettoni, Frank Fournel, Pierre Montméat, Sebastien Mermoz
With hybrid bonding pitch reduction, many challenges are arising such as optimized metrology measurement, bonding wave propagation understanding and hybrid surface characterization. By analyzing incoming wafer and how tool setting impacts bonding, overlay values below 110 nm for production wafers can be achieved with 100% electrical yield. Hybrid bonding extends further to IC Logic application or Memory and not only CMOS image sensor. For some of those products, the temperature of usual post bonding thermal annealing (400°C) cannot be applied. Consequently, many studies have been performed on developing low-temperature bonding. To add flexibility to hybrid bonding, new processes such as Surface Activation Bonding (SAB) and Die to Wafer bonding (D2W) have been developed to fit heterogenous integration.
{"title":"(Invited) Hybrid Bonding for 3D Applications: Improvements and Limitations","authors":"Emilie Deloffre, Bassel Ayoub, Sandrine Lhostis, Florent Dettoni, Frank Fournel, Pierre Montméat, Sebastien Mermoz","doi":"10.1149/11203.0063ecst","DOIUrl":"https://doi.org/10.1149/11203.0063ecst","url":null,"abstract":"With hybrid bonding pitch reduction, many challenges are arising such as optimized metrology measurement, bonding wave propagation understanding and hybrid surface characterization. By analyzing incoming wafer and how tool setting impacts bonding, overlay values below 110 nm for production wafers can be achieved with 100% electrical yield. Hybrid bonding extends further to IC Logic application or Memory and not only CMOS image sensor. For some of those products, the temperature of usual post bonding thermal annealing (400°C) cannot be applied. Consequently, many studies have been performed on developing low-temperature bonding. To add flexibility to hybrid bonding, new processes such as Surface Activation Bonding (SAB) and Die to Wafer bonding (D2W) have been developed to fit heterogenous integration.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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