Roy Knechtel, Micaela Wenig, Martin Seyring, Dominik Kley
Anodic bonding of glass to silicon wafers is an essential step in microsystems manufacturing, combining reliable process setup with robust process control and providing very strong and hermetic wafer bonds. It is general accepted that the bond formation is based on anodic oxidation processes, but it is still under debate where the oxygen originates from and how far the oxidation can be driven. The oxidation mechanism during anodic bonding has been studied using sequential and one-step bonding procedures. It can be concluded that the oxygen for the oxidation originates from the glass. It is therefore possible to completely oxidise sputtered aluminium between two glass wafers during bonding, resulting in a nearly optically transparent bond of both wafers. By understanding the oxidation processes, it is possible to predict which surface layers will bond well (silicon, silicon dioxide, aluminium) and which will be hardly or impossible to bond (silicon nitride, gold). These predictions have been tested and confirmed by experimental results.
{"title":"Investigation of Anodic Bond Formation Process and Potential Use of the Results","authors":"Roy Knechtel, Micaela Wenig, Martin Seyring, Dominik Kley","doi":"10.1149/11203.0207ecst","DOIUrl":"https://doi.org/10.1149/11203.0207ecst","url":null,"abstract":"Anodic bonding of glass to silicon wafers is an essential step in microsystems manufacturing, combining reliable process setup with robust process control and providing very strong and hermetic wafer bonds. It is general accepted that the bond formation is based on anodic oxidation processes, but it is still under debate where the oxygen originates from and how far the oxidation can be driven. The oxidation mechanism during anodic bonding has been studied using sequential and one-step bonding procedures. It can be concluded that the oxygen for the oxidation originates from the glass. It is therefore possible to completely oxidise sputtered aluminium between two glass wafers during bonding, resulting in a nearly optically transparent bond of both wafers. By understanding the oxidation processes, it is possible to predict which surface layers will bond well (silicon, silicon dioxide, aluminium) and which will be hardly or impossible to bond (silicon nitride, gold). These predictions have been tested and confirmed by experimental results.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135243225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kai Takeuchi, Takeki Ninomiya, Michitaka Kubota, Masaya Kawano, Takeshi Takagi, Niwa Masaaki, Tadahiro Kuroda, Tadatomo Suga
Hybrid bonding is an indispensable technique for the 3D integration of electronic systems. Cu-to-Cu interconnections and SiO 2 -to-SiO 2 dielectric layers should be bonded simultaneously in the wafer-to-wafer bonding process. In this study, sequential plasma activation (SPA) including O 2 plasma, N 2 plasma, and N radical is investigated for low-temperature bonding of Cu and TEOS SiO 2 at 200°C. The SPA bonding improves the bond strength to more than 1 J/m 2 compared to the conventional single gas plasma activation bonding. The surface analysis indicates that SPA forms oxynitrides on TEOS SiO 2 surface and Cu oxide with adsorbed water on the Cu surface, facilitating the bonding interface formation. The presented technique will contribute to the hybrid bonding applications at lower temperatures.
{"title":"Hydrophilic Bonding of SiO<sub>2</sub>/SiO<sub>2</sub> and Cu/Cu using Sequential Plasma Activation","authors":"Kai Takeuchi, Takeki Ninomiya, Michitaka Kubota, Masaya Kawano, Takeshi Takagi, Niwa Masaaki, Tadahiro Kuroda, Tadatomo Suga","doi":"10.1149/11203.0095ecst","DOIUrl":"https://doi.org/10.1149/11203.0095ecst","url":null,"abstract":"Hybrid bonding is an indispensable technique for the 3D integration of electronic systems. Cu-to-Cu interconnections and SiO 2 -to-SiO 2 dielectric layers should be bonded simultaneously in the wafer-to-wafer bonding process. In this study, sequential plasma activation (SPA) including O 2 plasma, N 2 plasma, and N radical is investigated for low-temperature bonding of Cu and TEOS SiO 2 at 200°C. The SPA bonding improves the bond strength to more than 1 J/m 2 compared to the conventional single gas plasma activation bonding. The surface analysis indicates that SPA forms oxynitrides on TEOS SiO 2 surface and Cu oxide with adsorbed water on the Cu surface, facilitating the bonding interface formation. The presented technique will contribute to the hybrid bonding applications at lower temperatures.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135243491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The purpose of this study is to clarify the effect of surface diffusion, which is the behavior of gas molecules on ionomer thin films, on the transport properties of oxygen in fuel cell catalyst layers. To this end, the direct simulation Monte Carlo (DSMC) and molecular dynamics (MD) methods were used in our simulations. The results of the DSMC method showed that the overall transport is strongly affected by the behavior of surface diffusion. It was found that the diffuse reflection model for surface diffusion used in the DSMC method has room for improvement as the MD results show a different trend that oxygen molecules tend to reflect in the direction of travel.
{"title":"Molecular Dynamics Analysis of the Scattering Phenomena of Oxygen Molecules on an Ionomer Surface in Catalyst Layer of Fuel Cell","authors":"Keisuke Mizuki, Takuya Mabuchi, Ikuya Kinefuchi, Takashi Tokumasu","doi":"10.1149/11204.0361ecst","DOIUrl":"https://doi.org/10.1149/11204.0361ecst","url":null,"abstract":"The purpose of this study is to clarify the effect of surface diffusion, which is the behavior of gas molecules on ionomer thin films, on the transport properties of oxygen in fuel cell catalyst layers. To this end, the direct simulation Monte Carlo (DSMC) and molecular dynamics (MD) methods were used in our simulations. The results of the DSMC method showed that the overall transport is strongly affected by the behavior of surface diffusion. It was found that the diffuse reflection model for surface diffusion used in the DSMC method has room for improvement as the MD results show a different trend that oxygen molecules tend to reflect in the direction of travel.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135243518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper develops the governing Total Energy (TE) (kilowatt-hours per kilogram hydrogen) and Total Power (TP) equations for Solid Oxide ElectrolyzerCells (SOECs) and Solid Oxide Fuel Cells (SOFCs). The TE equation includes heat input, exergetic flows, enthalpy of vaporization, pressurization, heat loss, area specific resistance (ASR), etc. The TE equation developed, as it would happen, correlates well with the Idaho National Laboratory (INL) proven SOEC performance of 45 kilowatt-hours per kilogram hydrogen at 20 bars and 725 K. TE is the key performance equation necessary for designing, predicting, and planning for SOEC and SOFC performance and cost. The ASR has a critical role in SOEC TE and TP. The ASR and the targets for ASR necessary to meet important DOE performance targets are discussed.
{"title":"Total Energy and Total Power for the SOEC: Critical Role of Area Specific Resistance in Hydrogen Production Rate","authors":"Mark Williams","doi":"10.1149/11205.0061ecst","DOIUrl":"https://doi.org/10.1149/11205.0061ecst","url":null,"abstract":"This paper develops the governing Total Energy (TE) (kilowatt-hours per kilogram hydrogen) and Total Power (TP) equations for Solid Oxide ElectrolyzerCells (SOECs) and Solid Oxide Fuel Cells (SOFCs). The TE equation includes heat input, exergetic flows, enthalpy of vaporization, pressurization, heat loss, area specific resistance (ASR), etc. The TE equation developed, as it would happen, correlates well with the Idaho National Laboratory (INL) proven SOEC performance of 45 kilowatt-hours per kilogram hydrogen at 20 bars and 725 K. TE is the key performance equation necessary for designing, predicting, and planning for SOEC and SOFC performance and cost. The ASR has a critical role in SOEC TE and TP. The ASR and the targets for ASR necessary to meet important DOE performance targets are discussed.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135243685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I have been helped by many mentors and mentees. My greatest mentor has been my father, who received PhD in organic chemistry in 1942, more than two years before I was born. That made both my brother (who has a PhD in mathematics) and myself pursue higher education. I have been immensely helped by many mentors. I will briefly talk about them. At Northwestern University, Prof. Morris E. Fine, who was not my advisor, but had a profound influence on me. His dedication to work is unparalleled. He retired at age 65 (as was the case then) but continued as Professor Emeritus until his death at the age of 97. It was amazing for me to see that he went to work at least 3 days a week well into his 90’s. One week, he did not go to school, so people from the MSE department at Northwestern went to his house, only to find that he had passed away in his sleep. This paper gives my reflections of my career.
{"title":"Dr. Virkar's Self-Reflections on Research Career","authors":"Anil Virkar","doi":"10.1149/11205.0067ecst","DOIUrl":"https://doi.org/10.1149/11205.0067ecst","url":null,"abstract":"I have been helped by many mentors and mentees. My greatest mentor has been my father, who received PhD in organic chemistry in 1942, more than two years before I was born. That made both my brother (who has a PhD in mathematics) and myself pursue higher education. I have been immensely helped by many mentors. I will briefly talk about them. At Northwestern University, Prof. Morris E. Fine, who was not my advisor, but had a profound influence on me. His dedication to work is unparalleled. He retired at age 65 (as was the case then) but continued as Professor Emeritus until his death at the age of 97. It was amazing for me to see that he went to work at least 3 days a week well into his 90’s. One week, he did not go to school, so people from the MSE department at Northwestern went to his house, only to find that he had passed away in his sleep. This paper gives my reflections of my career.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135244477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Curtis Durfee, Ivo Otto IV, Subhadeep Kal, Shanti Pancharatnam, Matthew Flaugh, Toshiki Kanaki, Matthew Rednor, Huimei Zhou, Liqiao Qin, Luciana Meli, Nicolas Loubet, Peter Biolsi, Nelson Felix
Nanosheet gate-all-around devices have demonstrated several advantages in device performance and area scaling over finFET devices with higher device density and improved electrostatic control. Robust inner spacer (IS) and channel formation is critical for high performance, reduced variability and good yield. An isotropic dry etch of the sacrificial SiGe layer with extremely high selectivity to gate spacer, IS and Si channels is necessary for high-quality channel formation over a wide range of sheet widths. Furthermore, the nFET Si:P and pFET SiGe:B source-drain (S/D) epitaxy must be isolated using inner spacers or buffers to prevent damage during Channel Release (CR). The damage can be further mitigated with optimized CR etch chemistry, enabling IS scaling. We highlight S/D damage mechanisms during CR, then demonstrate reduced S/D damage by co-optimization of the IS, CR chemistry and S/D epitaxy.
{"title":"Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors","authors":"Curtis Durfee, Ivo Otto IV, Subhadeep Kal, Shanti Pancharatnam, Matthew Flaugh, Toshiki Kanaki, Matthew Rednor, Huimei Zhou, Liqiao Qin, Luciana Meli, Nicolas Loubet, Peter Biolsi, Nelson Felix","doi":"10.1149/11201.0045ecst","DOIUrl":"https://doi.org/10.1149/11201.0045ecst","url":null,"abstract":"Nanosheet gate-all-around devices have demonstrated several advantages in device performance and area scaling over finFET devices with higher device density and improved electrostatic control. Robust inner spacer (IS) and channel formation is critical for high performance, reduced variability and good yield. An isotropic dry etch of the sacrificial SiGe layer with extremely high selectivity to gate spacer, IS and Si channels is necessary for high-quality channel formation over a wide range of sheet widths. Furthermore, the nFET Si:P and pFET SiGe:B source-drain (S/D) epitaxy must be isolated using inner spacers or buffers to prevent damage during Channel Release (CR). The damage can be further mitigated with optimized CR etch chemistry, enabling IS scaling. We highlight S/D damage mechanisms during CR, then demonstrate reduced S/D damage by co-optimization of the IS, CR chemistry and S/D epitaxy.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135245704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Alexandra Abbadie, C. Pribat, V. Gredy, V. Brouzet, E. Sereix
We focus on slip line formation and propagation on different types of Si and SOI substrates that underwent high temperature anneals during 65nm RFSOI device fabrication. Different parameters are found to contribute to slip line formation and dislocations propagation, mainly the substrate properties (thickness, layer and oxygen in silicon handle), the temperature gradients and the support between furnace carriers and backsides of substrates. Several parameters contribute to substrate deformation, e.g. the warpage increase. The warp degradation is found to be directly linked to low oxygen concentrations in silicon handle. This understanding is very helpful to introduce and process new substrates in advanced front-end process flows for MOS device fabrication.
{"title":"Impact of Oxygen on the Generation of Slip Lines and the Electronic Properties of Si-based Substrates","authors":"Alexandra Abbadie, C. Pribat, V. Gredy, V. Brouzet, E. Sereix","doi":"10.1149/11201.0147ecst","DOIUrl":"https://doi.org/10.1149/11201.0147ecst","url":null,"abstract":"We focus on slip line formation and propagation on different types of Si and SOI substrates that underwent high temperature anneals during 65nm RFSOI device fabrication. Different parameters are found to contribute to slip line formation and dislocations propagation, mainly the substrate properties (thickness, layer and oxygen in silicon handle), the temperature gradients and the support between furnace carriers and backsides of substrates. Several parameters contribute to substrate deformation, e.g. the warpage increase. The warp degradation is found to be directly linked to low oxygen concentrations in silicon handle. This understanding is very helpful to introduce and process new substrates in advanced front-end process flows for MOS device fabrication.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135199056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Atomic-order surface reaction processes of reactant gases on the Si (100) and Ge (100) surfaces are reviewed. The site density on the (100) surface where the reactant molecules are adsorbed and react is estimated from the maximum self-limited adsorption/reaction amount of reactant gas on the (100) surface. The atomic-order amounts of reactant gases under self-limiting adsorption/reaction conditions are described using a modified Langmuir-type mechanism as a function of reactant gas partial pressure and exposure time at a specified temperature. For the hydrogen-terminated surface, it is proposed that the reactant molecules are physically adsorbed on the hydrogen-terminated sites and react with the hydrogen terminated on the surface. Fairly good agreement is obtained between all experimental data and the modified Langmuir-type mechanism for the self-limited adsorption/ reaction.
{"title":"(Invited, Digital Presentation) Langmuir-Type Formulation for Atomic-Order Surface Reactions of Reactant Gases on Si (100) and Ge (100) Surfaces","authors":"Junichi Murota","doi":"10.1149/11201.0003ecst","DOIUrl":"https://doi.org/10.1149/11201.0003ecst","url":null,"abstract":"Atomic-order surface reaction processes of reactant gases on the Si (100) and Ge (100) surfaces are reviewed. The site density on the (100) surface where the reactant molecules are adsorbed and react is estimated from the maximum self-limited adsorption/reaction amount of reactant gas on the (100) surface. The atomic-order amounts of reactant gases under self-limiting adsorption/reaction conditions are described using a modified Langmuir-type mechanism as a function of reactant gas partial pressure and exposure time at a specified temperature. For the hydrogen-terminated surface, it is proposed that the reactant molecules are physically adsorbed on the hydrogen-terminated sites and react with the hydrogen terminated on the surface. Fairly good agreement is obtained between all experimental data and the modified Langmuir-type mechanism for the self-limited adsorption/ reaction.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135199838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The oxygen transport in cathode electrodes of polymer electrolyte fuel cells (PEFCs) is a key process for determining their power generation performance. To identify the factors affecting its transport loss, this study introduced the analysis of local entropy generation into the conventional two-phase flow simulation in the cathode gas diffusion layer (GDL) of a PEFC and estimated the distribution of the entropy production rate due to oxygen diffusion. The effect of land-channel geometry on its entropy generation in the GDL was also evaluated. The results revealed that the entropy generation of oxygen diffusion becomes remarkably high under the boundary between the channel and land that causes its large concentration gradient. It was also found that the entropy generation due to oxygen diffusion in the GDL increases with an increase in the water accumulation during the operation.
{"title":"Numerical Simulation of Local Entropy Generation of Oxygen Transport in Cathode Diffusion Media of PEFC","authors":"Kosuke Nishida","doi":"10.1149/11204.0043ecst","DOIUrl":"https://doi.org/10.1149/11204.0043ecst","url":null,"abstract":"The oxygen transport in cathode electrodes of polymer electrolyte fuel cells (PEFCs) is a key process for determining their power generation performance. To identify the factors affecting its transport loss, this study introduced the analysis of local entropy generation into the conventional two-phase flow simulation in the cathode gas diffusion layer (GDL) of a PEFC and estimated the distribution of the entropy production rate due to oxygen diffusion. The effect of land-channel geometry on its entropy generation in the GDL was also evaluated. The results revealed that the entropy generation of oxygen diffusion becomes remarkably high under the boundary between the channel and land that causes its large concentration gradient. It was also found that the entropy generation due to oxygen diffusion in the GDL increases with an increase in the water accumulation during the operation.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Direct bonding consists in spontaneously bringing into contact two solid surfaces without any intermediate liquid. We focused on silicon direct bonding with polymer films. Direct bonding was evaluated with two polymers: LOR (MicroChem) and BARC (Rohm & Haas), commonly used in photolithography. Polymer bonding by thermal compression was compared to polymer direct bonding. Adhesion energies and bonding wave velocities of bonding between polymers and silicon surfaces were determined. The bonded stacks exhibited good quality bonding interfaces in terms of defects. High adherence energies up to 10 J/m² were measured.
{"title":"Polymer to Silicon Direct Bonding for Microelectronics","authors":"Margaux Dautriat, Pierre Montméat, Frank Fournel","doi":"10.1149/11203.0051ecst","DOIUrl":"https://doi.org/10.1149/11203.0051ecst","url":null,"abstract":"Direct bonding consists in spontaneously bringing into contact two solid surfaces without any intermediate liquid. We focused on silicon direct bonding with polymer films. Direct bonding was evaluated with two polymers: LOR (MicroChem) and BARC (Rohm & Haas), commonly used in photolithography. Polymer bonding by thermal compression was compared to polymer direct bonding. Adhesion energies and bonding wave velocities of bonding between polymers and silicon surfaces were determined. The bonded stacks exhibited good quality bonding interfaces in terms of defects. High adherence energies up to 10 J/m² were measured.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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