We fabricated 400°C-annealed TiN/HfxZr1−xO2 (HZO)/TiN metal–ferroelectric–metal (MFM) capacitors using H2O and O2 plasma as oxidant gases of thermal (TH) and plasma-enhanced atomic layer deposition (PE-ALD), respectively, for HZO films. The PE-ALD film formed a more ferroelectric orthorhombic phase compared with the TH-ALD case. Therefore, the MFM capacitor with the PE-ALD film showed higher remanent polarization and dielectric constant. For the PE-ALD case, moreover, an oxygen-rich interfacial layer (O-rich-IL) was formed between the HZO film and TiN-bottom electrode during the ALD process. Thus, the MFM capacitor with the PE-ALD film showed less degradation of switching polarization during field cycling compared with the TH-ALD case, because an O-rich-IL should prevent the interface reaction and formation of additional oxygen vacancies in the PE-ALD film during field cycling. Based on these results, it is important to consider the selection of an ALD oxidant gas for the fabrication of HZO-based MFM capacitors.
{"title":"(Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors","authors":"Takashi Onaya, Koji Kita","doi":"10.1149/11302.0051ecst","DOIUrl":"https://doi.org/10.1149/11302.0051ecst","url":null,"abstract":"We fabricated 400°C-annealed TiN/HfxZr1−xO2 (HZO)/TiN metal–ferroelectric–metal (MFM) capacitors using H2O and O2 plasma as oxidant gases of thermal (TH) and plasma-enhanced atomic layer deposition (PE-ALD), respectively, for HZO films. The PE-ALD film formed a more ferroelectric orthorhombic phase compared with the TH-ALD case. Therefore, the MFM capacitor with the PE-ALD film showed higher remanent polarization and dielectric constant. For the PE-ALD case, moreover, an oxygen-rich interfacial layer (O-rich-IL) was formed between the HZO film and TiN-bottom electrode during the ALD process. Thus, the MFM capacitor with the PE-ALD film showed less degradation of switching polarization during field cycling compared with the TH-ALD case, because an O-rich-IL should prevent the interface reaction and formation of additional oxygen vacancies in the PE-ALD film during field cycling. Based on these results, it is important to consider the selection of an ALD oxidant gas for the fabrication of HZO-based MFM capacitors.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"57 39","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Oliver Horner, Elod Lajos Gyenge, David P. Wilkinson
Seawater Electrolysis is an exciting alternative to freshwater electrolysis; however, it suffers from a multitude of issues that must be resolved before the technology can be scaled. Corrosive hypochlorite forms at the anode of seawater electrolysis and can damage catalysts and electrolyzer components. Hypochlorite is unstable and can decay, particularly when exposed to heat and metal ions, which can lead to erroneously high oxygen evolution reaction (OER) selectivity conclusions, resulting in poor catalyst and electrolyzer component selection. In this study, we use the rotating ring-disc electrode technique to characterize the selectivity of IrO2, NiO, Co3O4, RuO2, Pt and PtRu electrocatalysts in situ at near-neutral pH (8.4) with linear scan voltammetry (LSV), potentiostatic and galvanostatic experiments. Our findings reveal that elevated temperatures are conducive to higher OER selectivity. Furthermore, when we increased the chloride concentration in the electrolyte with an IrO2 catalyst, we observed that although the overall selectivity towards the OER reaction decreased, the OER current independently increased, indicating a synergistic relationship.
海水电解法是淡水电解法的一种令人兴奋的替代方法；然而，它存在许多问题，必须在该技术规模化之前加以解决。海水电解的阳极会形成腐蚀性次氯酸盐，并可能损坏催化剂和电解槽组件。次氯酸盐不稳定，会发生衰变，尤其是在受热和接触金属离子时，这会导致氧进化反应（OER）选择性结论错误地偏高，从而导致催化剂和电解槽组件选择不当。在本研究中，我们使用旋转环盘电极技术，通过线性扫描伏安法 (LSV)、恒电位和恒电流实验，对 IrO2、NiO、Co3O4、RuO2、Pt 和 PtRu 电催化剂在接近中性 pH 值（8.4）下的选择性进行了原位表征。我们的研究结果表明，温度升高有利于提高 OER 的选择性。此外，当我们用二氧化铱催化剂增加电解液中的氯浓度时，我们观察到虽然对 OER 反应的总体选择性降低了，但 OER 电流却独立地增加了，这表明了一种协同关系。
{"title":"Selectivity Study of Anodic Seawater Electrolysis Catalysts Using the Rotating Ring-Disc Electrode Method","authors":"Oliver Horner, Elod Lajos Gyenge, David P. Wilkinson","doi":"10.1149/11309.0003ecst","DOIUrl":"https://doi.org/10.1149/11309.0003ecst","url":null,"abstract":"Seawater Electrolysis is an exciting alternative to freshwater electrolysis; however, it suffers from a multitude of issues that must be resolved before the technology can be scaled. Corrosive hypochlorite forms at the anode of seawater electrolysis and can damage catalysts and electrolyzer components. Hypochlorite is unstable and can decay, particularly when exposed to heat and metal ions, which can lead to erroneously high oxygen evolution reaction (OER) selectivity conclusions, resulting in poor catalyst and electrolyzer component selection. In this study, we use the rotating ring-disc electrode technique to characterize the selectivity of IrO2, NiO, Co3O4, RuO2, Pt and PtRu electrocatalysts in situ at near-neutral pH (8.4) with linear scan voltammetry (LSV), potentiostatic and galvanostatic experiments. Our findings reveal that elevated temperatures are conducive to higher OER selectivity. Furthermore, when we increased the chloride concentration in the electrolyte with an IrO2 catalyst, we observed that although the overall selectivity towards the OER reaction decreased, the OER current independently increased, indicating a synergistic relationship.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"1 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jaemin Shin, Tyafur Pathan, Guanyu Zhou, Christopher L. Hinkle
In this work, we synthesize new 2D layered dielectrics and fabricate metal-insulator-metal (MIM) capacitors to determine their viability for scaled gate dielectrics (ZrNCl, HfNCl, BiOCl, and Mg(OH)2) in transition metal dichalcogenide-based transistors. While successful synthesis and fabrication was demonstrated, the properties of the dielectrics were decidedly underwhelming for device applications. The dielectric constants, in most cases, were only marginally better than SiO2 (k = 4-6), the leakage currents were too high due to poor band offsets, and most importantly, the bulk trap density, as seen previously in III-V devices, was very high. Overall, there still is no viable 2D gate dielectric for scaled field effect transistors.
{"title":"(Invited) Bulk Traps in Layered 2D Gate Dielectrics","authors":"Jaemin Shin, Tyafur Pathan, Guanyu Zhou, Christopher L. Hinkle","doi":"10.1149/11302.0025ecst","DOIUrl":"https://doi.org/10.1149/11302.0025ecst","url":null,"abstract":"In this work, we synthesize new 2D layered dielectrics and fabricate metal-insulator-metal (MIM) capacitors to determine their viability for scaled gate dielectrics (ZrNCl, HfNCl, BiOCl, and Mg(OH)2) in transition metal dichalcogenide-based transistors. While successful synthesis and fabrication was demonstrated, the properties of the dielectrics were decidedly underwhelming for device applications. The dielectric constants, in most cases, were only marginally better than SiO2 (k = 4-6), the leakage currents were too high due to poor band offsets, and most importantly, the bulk trap density, as seen previously in III-V devices, was very high. Overall, there still is no viable 2D gate dielectric for scaled field effect transistors.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"5 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, T. J. Yoo, Honggyu Kim, S. J. Pearton
Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in gate voltage of AlGaN/GaN high electron mobility transistors for e-mode operation. A direct comparison with Schottky gate devices fabricated on the same wafer shows the utility of the NiO in increasing the on-off ratio and shifting the threshold voltage from -0.95 V (Schottky gated) to +0.9 V (NiO gated). The breakdown voltage was 780 V for a 40 µm drain-source separation. The sub-threshold swing decreased from 181 mV/dec for Schottky gate HEMTs to 128 mV/dec on NiO-gated devices. The simple fabrication process without any annealing or passivation steps shows the promise of NiO-gates for e-mode AlGaN/GaN HEMT operation.
{"title":"E-Mode AlGaN/GaN HEMTs Using p-NiO Gates","authors":"Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, T. J. Yoo, Honggyu Kim, S. J. Pearton","doi":"10.1149/11307.0045ecst","DOIUrl":"https://doi.org/10.1149/11307.0045ecst","url":null,"abstract":"Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in gate voltage of AlGaN/GaN high electron mobility transistors for e-mode operation. A direct comparison with Schottky gate devices fabricated on the same wafer shows the utility of the NiO in increasing the on-off ratio and shifting the threshold voltage from -0.95 V (Schottky gated) to +0.9 V (NiO gated). The breakdown voltage was 780 V for a 40 µm drain-source separation. The sub-threshold swing decreased from 181 mV/dec for Schottky gate HEMTs to 128 mV/dec on NiO-gated devices. The simple fabrication process without any annealing or passivation steps shows the promise of NiO-gates for e-mode AlGaN/GaN HEMT operation.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"55 51","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
MXene has garnered significant attention as a two-dimensional material with exceptional physicochemical properties for gas sensing development. This study utilized ZSM-5 nanoparticles loaded with MXene to prepare printable inks, aiming to explore novel applications of MXene in the gas sensing field. The morphology of MXene/ZSM-5 was characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), demonstrating the typical layered structure of MXene and particle morphology of composite ZSM-5. X-ray photoelectron spectroscopy (XPS) confirmed no production of TiO2 by providing valence information on elements. Thermogravimetric analysis (TG) revealed excellent thermal stability. To verify functional gas sensing feasibility, various hydrocarbons and common gases underwent adsorption and desorption tests (BET). Results showed that MXene loaded with ZSM-5 exhibited good adsorbability for C4H10, C7H8, SF6, H2O and O2 while having a certain trapping effect on CO2. Through testing and analyzing printing results, it was found that the MXene/ZSM-5 ink overcame dispersion issues present in pure MXene ink.
{"title":"Printable MXene Ink Hybridized with ZSM-5 for Gas Sensing and CO2 Capturing","authors":"胜辉 夏, Chen Chen, Jinhong Liu, Kyle Leatt, Thomas Thundat, Ajit Khosla","doi":"10.1149/11313.0015ecst","DOIUrl":"https://doi.org/10.1149/11313.0015ecst","url":null,"abstract":"MXene has garnered significant attention as a two-dimensional material with exceptional physicochemical properties for gas sensing development. This study utilized ZSM-5 nanoparticles loaded with MXene to prepare printable inks, aiming to explore novel applications of MXene in the gas sensing field. The morphology of MXene/ZSM-5 was characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), demonstrating the typical layered structure of MXene and particle morphology of composite ZSM-5. X-ray photoelectron spectroscopy (XPS) confirmed no production of TiO2 by providing valence information on elements. Thermogravimetric analysis (TG) revealed excellent thermal stability. To verify functional gas sensing feasibility, various hydrocarbons and common gases underwent adsorption and desorption tests (BET). Results showed that MXene loaded with ZSM-5 exhibited good adsorbability for C4H10, C7H8, SF6, H2O and O2 while having a certain trapping effect on CO2. Through testing and analyzing printing results, it was found that the MXene/ZSM-5 ink overcame dispersion issues present in pure MXene ink.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"42 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140966015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work provides a detailed introduction to the preparation methods, structural characteristics, and various performance tests of the Ti3C2/ZIF-8 composite material. Initially, the composite material is obtained through the synthesis, mixing, and subsequent processing of MXene solution and ZIF-8 nanoparticles. The coating structure and properties were comprehensively characterized using SEM, TEM, and XRD. These analyses revealed the material's layered structure, high crystallinity, and surface activity. BET analysis of Ti3C2/ZIF-8 also shows excellent gas adsorption-desorption performance, having an especially high-efficiency adsorption capacity for VOCs. TGA further demonstrates the thermal stability and chemical stability of Ti3C2/ZIF-8 and its printability was tested indicating widespread application potential in coating preparation through ultrasonic spray technology. Finally, we show methods to regulate and control coating thickness and roughness for precision manufacturing. These analyses together emphasize the application value of Ti3C2/ZIF-8 in fields such as gas-storage, gas-separation, and environmental monitoring.
{"title":"Micropatternable Ink Composed of MAX Phase ZIF-8 for Gas Sensing Applications","authors":"Chen Chen, 胜辉 夏, Jinhong Liu, Kyle Leatt, Thomas Thundat, Ajit Khosla","doi":"10.1149/11313.0003ecst","DOIUrl":"https://doi.org/10.1149/11313.0003ecst","url":null,"abstract":"This work provides a detailed introduction to the preparation methods, structural characteristics, and various performance tests of the Ti3C2/ZIF-8 composite material. Initially, the composite material is obtained through the synthesis, mixing, and subsequent processing of MXene solution and ZIF-8 nanoparticles. The coating structure and properties were comprehensively characterized using SEM, TEM, and XRD. These analyses revealed the material's layered structure, high crystallinity, and surface activity. BET analysis of Ti3C2/ZIF-8 also shows excellent gas adsorption-desorption performance, having an especially high-efficiency adsorption capacity for VOCs. TGA further demonstrates the thermal stability and chemical stability of Ti3C2/ZIF-8 and its printability was tested indicating widespread application potential in coating preparation through ultrasonic spray technology. Finally, we show methods to regulate and control coating thickness and roughness for precision manufacturing. These analyses together emphasize the application value of Ti3C2/ZIF-8 in fields such as gas-storage, gas-separation, and environmental monitoring.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"5 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, a compact model proposed in the previous work (2) was utilized to elucidate an unusual minority carrier response time observed in MOS(p) devices with Al2O3/SiO2 gate stacks. It is supposed that the number of oxide charges increases with SiO2 thickness. The findings confirmed the heightened sensitivity of device alternating current (AC) characteristics to oxide charges in the outer region. Accordingly, we explored the dependencies of oxide thickness and quality on the transition frequency (ωm) of devices.
{"title":"Impact of Oxide Charges on The Minority Carrier Response in MOS(p) Devices With Al2O3/SiO2 Gate Stacks under Strong Inversion Condition","authors":"Chi-Yi Kao, Tai-Ming Kung, J. Hwu","doi":"10.1149/11302.0043ecst","DOIUrl":"https://doi.org/10.1149/11302.0043ecst","url":null,"abstract":"In this study, a compact model proposed in the previous work (2) was utilized to elucidate an unusual minority carrier response time observed in MOS(p) devices with Al2O3/SiO2 gate stacks. It is supposed that the number of oxide charges increases with SiO2 thickness. The findings confirmed the heightened sensitivity of device alternating current (AC) characteristics to oxide charges in the outer region. Accordingly, we explored the dependencies of oxide thickness and quality on the transition frequency (ωm) of devices.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"41 39","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140966105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Advancements in clean energy drive socio-economic development and foster a sustainable future by restructuring energy systems and promoting low-carbon development. In this paper, we presented a comprehensive investigation on the design and performance characterization of CdS/Ti-Si-O composite photoanodes for photoelectrochemical (PEC) hydrogen generation. Silicon-doped TiO2 nanotube arrays were fabricated through anodization of Ti-5Si alloy, followed by the deposition of CdS using the SILAR (successive ionic layer adsorption and reaction) process, resulting in nanostructured Ti-Si-O photoanodes modified with CdS. The composite photoanodes were characterized in terms of their composition, microstructure, optical properties and photoelectrochemical hydrogen production performance. The composite photoanodes revealed a notable enhancement in PEC hydrogen generation properties with a photocurrent density of 7.86 mA/cm2，which was 19.15 times and 9.59 times to those of the undoped TiO2 photoanode and Ti-Si-O photoanode, respectively. The Si-doping mechanism of the photoanodes was elucidated through Density Functional Theory (DFT) calculations. The synergistic combination of Si-doping and CdS modification represents a novel and promising approach for the design of efficient nanostructured photoanodes.
{"title":"(Invited) CdS/Ti-Si-O Composite Photoanode for Photoelectrochemical Hydrogen Generation","authors":"Weilong Feng, Dongyan Ding, Zhi Chen","doi":"10.1149/11302.0061ecst","DOIUrl":"https://doi.org/10.1149/11302.0061ecst","url":null,"abstract":"Advancements in clean energy drive socio-economic development and foster a sustainable future by restructuring energy systems and promoting low-carbon development. In this paper, we presented a comprehensive investigation on the design and performance characterization of CdS/Ti-Si-O composite photoanodes for photoelectrochemical (PEC) hydrogen generation. Silicon-doped TiO2 nanotube arrays were fabricated through anodization of Ti-5Si alloy, followed by the deposition of CdS using the SILAR (successive ionic layer adsorption and reaction) process, resulting in nanostructured Ti-Si-O photoanodes modified with CdS. The composite photoanodes were characterized in terms of their composition, microstructure, optical properties and photoelectrochemical hydrogen production performance. The composite photoanodes revealed a notable enhancement in PEC hydrogen generation properties with a photocurrent density of 7.86 mA/cm2，which was 19.15 times and 9.59 times to those of the undoped TiO2 photoanode and Ti-Si-O photoanode, respectively. The Si-doping mechanism of the photoanodes was elucidated through Density Functional Theory (DFT) calculations. The synergistic combination of Si-doping and CdS modification represents a novel and promising approach for the design of efficient nanostructured photoanodes.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"2 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140961990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Li deposition decreases the thermal stability of Li-ion batteries (LiBs), reducing safety. We have developed High-Frequency Electrochemical Impedance Spectroscopy (HF-EIS) to detect Li deposition from the high-frequency real part impedance in the MHz range. The evaluation of the relationship between the onset temperature of thermal runaway and the change in high-frequency impedance demonstrated that HF-EIS is capable of quantitatively evaluating the safety associated with Li deposition. The HF-EIS can be a diagnostic tool for safety quantification and can contribute to the development of battery materials by reducing the cost of destructive testing.
{"title":"High-Frequency Electrochemical Impedance Spectroscopy for Detecting Li Deposition Toward Assessing Thermal Stability in LiBs","authors":"Keisuke Ishikawa, Shogo Komagata, Ryohei Morimoto, Masanori Ishigaki, Hiroki Kondo, Tsuyoshi Sasaki","doi":"10.1149/11301.0009ecst","DOIUrl":"https://doi.org/10.1149/11301.0009ecst","url":null,"abstract":"Li deposition decreases the thermal stability of Li-ion batteries (LiBs), reducing safety. We have developed High-Frequency Electrochemical Impedance Spectroscopy (HF-EIS) to detect Li deposition from the high-frequency real part impedance in the MHz range. The evaluation of the relationship between the onset temperature of thermal runaway and the change in high-frequency impedance demonstrated that HF-EIS is capable of quantitatively evaluating the safety associated with Li deposition. The HF-EIS can be a diagnostic tool for safety quantification and can contribute to the development of battery materials by reducing the cost of destructive testing.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"6 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper proposes solar energy as a viable alternative to biomass fuels for cooking, introducing a collapsible parabolic solar cooker designed to regulate heat production. The collector is divided into three sectors, with a specific condition for effective convergence of reflected radiation. The total concentration ratio is 89.4, with the primary sector covering 42%, while sectors 2 and 3 occupy 29% each. In the analysis ASAE protocol was employed. The results obtained from the ASAE S580.1 test revealed a range of cooking power values, with a minimum of 215.5 W and a maximum of 280.9 W. The single measure of performance of the cooker was gauged at 234.17 W. Regarding the Standard Stagnation Temperature, it was observed that a reduction of the collector area by 0.343݉ଶ resulted in a temperature decrease of 59.5℃. The highest recorded SST for the entire solar cooker (when all three sectors were expanded) reached 279℃.
{"title":"Design, Construction, and Performance Testing of a Collapsible Parabolic Dish Solar Cooker for Temperature Control","authors":"Peter Mwinisin, Douglas Yeboah, Isaac Annin","doi":"10.1149/11310.0021ecst","DOIUrl":"https://doi.org/10.1149/11310.0021ecst","url":null,"abstract":"This paper proposes solar energy as a viable alternative to biomass fuels for cooking, introducing a collapsible parabolic solar cooker designed to regulate heat production. The collector is divided into three sectors, with a specific condition for effective convergence of reflected radiation. The total concentration ratio is 89.4, with the primary sector covering 42%, while sectors 2 and 3 occupy 29% each. In the analysis ASAE protocol was employed. The results obtained from the ASAE S580.1 test revealed a range of cooking power values, with a minimum of 215.5 W and a maximum of 280.9 W. The single measure of performance of the cooker was gauged at 234.17 W. Regarding the Standard Stagnation Temperature, it was observed that a reduction of the collector area by 0.343݉ଶ resulted in a temperature decrease of 59.5℃. The highest recorded SST for the entire solar cooker (when all three sectors were expanded) reached 279℃.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"8 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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