This study investigates the durability of proton exchange membrane fuel cells against the Pt-dissolution degradation mechanism using a triangular accelerated stress test (AST) within the voltage range of 0.6-1 V. The electrochemical active surface area and polarization curves are reported throughout the AST for three different catalyst layers (CL), all featuring 0.1 mg/cm2 Pt loading but with different morphologies, which include the Pt/C weight percentages, dilution ratio, and thickness. In addition, a numerical model is employed to simulate the electrochemical performance of these samples at the beginning and end of life, considering the variations in the oxygen transport resistances and catalyst structure.
本研究采用三角加速应力测试（AST），在 0.6-1 V 的电压范围内研究质子交换膜燃料电池在铂溶解降解机制下的耐久性。报告了三种不同催化剂层（CL）在整个 AST 期间的电化学活性表面积和极化曲线。此外，考虑到氧传输电阻和催化剂结构的变化，还采用了一个数值模型来模拟这些样品在寿命开始和结束时的电化学性能。
{"title":"Durability Investigation of Low Pt-Loaded PEM Fuel Cells with Different Catalyst Layer Morphologies","authors":"A. Saeidfar, S. Yeşilyurt","doi":"10.1149/11311.0003ecst","DOIUrl":"https://doi.org/10.1149/11311.0003ecst","url":null,"abstract":"This study investigates the durability of proton exchange membrane fuel cells against the Pt-dissolution degradation mechanism using a triangular accelerated stress test (AST) within the voltage range of 0.6-1 V. The electrochemical active surface area and polarization curves are reported throughout the AST for three different catalyst layers (CL), all featuring 0.1 mg/cm2 Pt loading but with different morphologies, which include the Pt/C weight percentages, dilution ratio, and thickness. In addition, a numerical model is employed to simulate the electrochemical performance of these samples at the beginning and end of life, considering the variations in the oxygen transport resistances and catalyst structure.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"2 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140961986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gallium nitride thin films in semiconductor technology have garnered interest. This study aims to develop an effective GaN electrodeposition technique applicable where needed. To determine the optimal conditions, cyclic voltammetry (CV) was done on a boron-doped diamond electrode at 0.01 mV/s potential scan rate and at 0.8 V vs. Ag/AgCl (Saturated KCl) constant applied potential. In the CV study, a well-defined peak formed at -1.75 V vs. Ag/Ag/Cl (Saturated KCl). To start examining thin film features on Indium Tin Oxide (ITO) and Fluorine Tin Oxide (FTO) electrodes, chronoamperometry (CA) measurements were done at time scales ranging from 3600s to 14,000s and at a constant applied potential of -1.7 V vs. Ag/AgCl (Saturated KCl). The characterization methods used to examine the samples included SEM and EDS. The optimal weight electrodeposition percentages of Ga and N on ITO were 10.3% and 27.2% and 47.3% and 12.7% on FTO respectively.
半导体技术中的氮化镓薄膜备受关注。本研究旨在开发一种适用于所需领域的有效氮化镓电沉积技术。为确定最佳条件，在掺硼金刚石电极上以 0.01 mV/s 的电位扫描速率和 0.8 V 对 Ag/AgCl（饱和氯化钾）恒定应用电位进行了循环伏安法（CV）研究。在 CV 研究中，与 Ag/Ag/Cl（饱和氯化钾）相比，在 -1.75 V 处形成了一个明确的峰值。为了开始检查氧化铟锡 (ITO) 和氧化氟锡 (FTO) 电极上的薄膜特征，我们在 3600 秒到 14000 秒的时间尺度范围内，以-1.7 V 的恒定应用电位对 Ag/AgCl（饱和氯化钾）进行了时变测量 (CA)。用于检测样品的表征方法包括 SEM 和 EDS。在 ITO 上 Ga 和 N 的最佳电沉积重量百分比分别为 10.3% 和 27.2%，在 FTO 上分别为 47.3% 和 12.7%。
{"title":"Gallium Nitride Electrodeposition at Indium Tin Oxide and Fluorine Tin Oxide Electrodes in Ammonium Nitrate and Gallium Nitrate Aqueous Solution","authors":"Mauricio A. Leyva Aranzabal, Carlos R. Cabrera","doi":"10.1149/11307.0037ecst","DOIUrl":"https://doi.org/10.1149/11307.0037ecst","url":null,"abstract":"Gallium nitride thin films in semiconductor technology have garnered interest. This study aims to develop an effective GaN electrodeposition technique applicable where needed. To determine the optimal conditions, cyclic voltammetry (CV) was done on a boron-doped diamond electrode at 0.01 mV/s potential scan rate and at 0.8 V vs. Ag/AgCl (Saturated KCl) constant applied potential. In the CV study, a well-defined peak formed at -1.75 V vs. Ag/Ag/Cl (Saturated KCl). To start examining thin film features on Indium Tin Oxide (ITO) and Fluorine Tin Oxide (FTO) electrodes, chronoamperometry (CA) measurements were done at time scales ranging from 3600s to 14,000s and at a constant applied potential of -1.7 V vs. Ag/AgCl (Saturated KCl). The characterization methods used to examine the samples included SEM and EDS. The optimal weight electrodeposition percentages of Ga and N on ITO were 10.3% and 27.2% and 47.3% and 12.7% on FTO respectively.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"66 22","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work describes the preparation, characterization, and micropatterning of MXene(Ti3C2)/TiO2 nanocomposite inks. MXene nanopowder was oxidized to form MXene/TiO2 nanocomposite powder using an air-aging method. The MXene/TiO2 inks were prepared using deionized water (H2O) as the solvent/dispersant and polyvinylpyrrolidone (PVP) as the surfactant. Various techniques were utilized to characterize the MXene/TiO2 nanocomposite material, and the BET results showed the preferential adsorption of butane of the MXene/TiO2 coating. Utilizing an ultrasonic dispersion printer in conjunction with a stencil mask, the MXene/TiO2 nanocomposite ink was successfully printed onto a 10mm*10mm gold-plated silicon substrate. This process achieved millimeter-level precision control, enabling the printing of fine lines with a width of 1μm and a spacing of 0.05mm. Furthermore, this technique demonstrated the ability to render various complex patterns, thus exemplifying the potential of MXene/TiO2 nanocomposite ink in the field of micro- and nano-manufacturing.
{"title":"Micropatterning MXene/TiO2 Nanocomposite Ink for Gas Sensing","authors":"Jinhong Liu, Chen Chen, 胜辉 夏, Kyle Leatt, Ajit Khosla, Thomas Thundat","doi":"10.1149/11312.0003ecst","DOIUrl":"https://doi.org/10.1149/11312.0003ecst","url":null,"abstract":"This work describes the preparation, characterization, and micropatterning of MXene(Ti3C2)/TiO2 nanocomposite inks. MXene nanopowder was oxidized to form MXene/TiO2 nanocomposite powder using an air-aging method. The MXene/TiO2 inks were prepared using deionized water (H2O) as the solvent/dispersant and polyvinylpyrrolidone (PVP) as the surfactant. Various techniques were utilized to characterize the MXene/TiO2 nanocomposite material, and the BET results showed the preferential adsorption of butane of the MXene/TiO2 coating. Utilizing an ultrasonic dispersion printer in conjunction with a stencil mask, the MXene/TiO2 nanocomposite ink was successfully printed onto a 10mm*10mm gold-plated silicon substrate. This process achieved millimeter-level precision control, enabling the printing of fine lines with a width of 1μm and a spacing of 0.05mm. Furthermore, this technique demonstrated the ability to render various complex patterns, thus exemplifying the potential of MXene/TiO2 nanocomposite ink in the field of micro- and nano-manufacturing.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"29 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Rumpf, P. Granitzer, R. Gonzalez-Rodriguez, J. Coffer
In this work nanostructured silicon, silicon nanotubes (SiNTs) and porous silicon (PSi), with embedded hard magnetic FePt nanoparticles (NPs) is used as platform to create hard magnetic nanomagnet-arrays. The magnetic response of FePt-loaded composite materials is investigated, which have potential in high-performance magnets and as rare earth magnet alternatives. PSi/FePt demonstrates superior hard magnetic behavior with a higher coercivity and remanence compared to SiNTs/FePt. Varying the Fe:Pt molar ratio in deposits results in a small coercivity (HC) change. FePt-loaded samples consistently show increased coercivity and remanence compared to Co-loaded samples, with PSi exhibiting a stronger effect compared to SiNTs. Comparing FePt-loaded samples with Co-NP-loaded samples, in both template types an increase of the coercivity is observed for FePt. Also in the case of Co-loading the utilization of PSi offers higher coercivities compared to SiNTs. From the investigated composite systems the ones consisting of PSi and FePt offer the highest energy product.
{"title":"Hard Magnetic FePt Nanoparticles within Nanostructured Silicon to Improve the Maximum Energy Product","authors":"K. Rumpf, P. Granitzer, R. Gonzalez-Rodriguez, J. Coffer","doi":"10.1149/11304.0011ecst","DOIUrl":"https://doi.org/10.1149/11304.0011ecst","url":null,"abstract":"In this work nanostructured silicon, silicon nanotubes (SiNTs) and porous silicon (PSi), with embedded hard magnetic FePt nanoparticles (NPs) is used as platform to create hard magnetic nanomagnet-arrays. The magnetic response of FePt-loaded composite materials is investigated, which have potential in high-performance magnets and as rare earth magnet alternatives. PSi/FePt demonstrates superior hard magnetic behavior with a higher coercivity and remanence compared to SiNTs/FePt. Varying the Fe:Pt molar ratio in deposits results in a small coercivity (HC) change. FePt-loaded samples consistently show increased coercivity and remanence compared to Co-loaded samples, with PSi exhibiting a stronger effect compared to SiNTs. Comparing FePt-loaded samples with Co-NP-loaded samples, in both template types an increase of the coercivity is observed for FePt. Also in the case of Co-loading the utilization of PSi offers higher coercivities compared to SiNTs. From the investigated composite systems the ones consisting of PSi and FePt offer the highest energy product.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"16 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G M Mehedi Hossain, A. Jalal, Nezih Pala, Fahmida Alam
In the contemporary global landscape, diabetes is a concerning presence that contributes to noteworthy mortality rates. The etiology of this condition involves a subtle interaction between insulin deficiency and elevated blood sugar levels. Against this backdrop, the necessity for prompt, accurate, and continuous noninvasive monitoring of glucose concentrations becomes notably evident. The electrochemical flexible glucose biosensor was fabricated by immobilizing glucose oxidase (GOx) on ZnO nanoflakes, possessing a 20nm thickness, and synthesized on an Au-coated stretchable PET film. The sensitivity of the flexible biosensor was determined by 29.97μA/decade/cm², and the minimum detection limit was 1μM. The coefficient of determination was 97.76%, which is significantly linear.
在当代全球范围内，糖尿病是一种令人担忧的疾病，它导致了显著的死亡率。这种疾病的病因涉及胰岛素缺乏和血糖水平升高之间微妙的相互作用。在此背景下，对葡萄糖浓度进行及时、准确和连续的无创监测就显得尤为必要。电化学柔性葡萄糖生物传感器是通过将葡萄糖氧化酶（GOx）固定在厚度为 20nm 的氧化锌纳米片上，并合成在镀金的可拉伸 PET 薄膜上制成的。柔性生物传感器的灵敏度为 29.97μA/decade/cm² ，最低检测限为 1μM。测定系数为 97.76%，具有明显的线性。
{"title":"Advancements in Glucose Monitoring: A Thin Film ZnO-Nanoflakes Based Highly Sensitive Wearable Biosensor for Noninvasive Sweat-Based Point-of-Care Monitoring for Diabetes","authors":"G M Mehedi Hossain, A. Jalal, Nezih Pala, Fahmida Alam","doi":"10.1149/11313.0035ecst","DOIUrl":"https://doi.org/10.1149/11313.0035ecst","url":null,"abstract":"In the contemporary global landscape, diabetes is a concerning presence that contributes to noteworthy mortality rates. The etiology of this condition involves a subtle interaction between insulin deficiency and elevated blood sugar levels. Against this backdrop, the necessity for prompt, accurate, and continuous noninvasive monitoring of glucose concentrations becomes notably evident. The electrochemical flexible glucose biosensor was fabricated by immobilizing glucose oxidase (GOx) on ZnO nanoflakes, possessing a 20nm thickness, and synthesized on an Au-coated stretchable PET film. The sensitivity of the flexible biosensor was determined by 29.97μA/decade/cm², and the minimum detection limit was 1μM. The coefficient of determination was 97.76%, which is significantly linear.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"3 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jing Zhang, Bryan Melanson, M. Seitz, Jacob Boisvere
Solid-state ultraviolet (UV) light emitters are being developed for emerging biomedical applications such as surface sterilization, air/water purification, and medical treatments as a replacement for mercury vapor lamps. While these UV emitters offer many advantages over mercury lamps, such as more compact form factors, tunable emission wavelengths, and greatly increased lifetimes, they also suffer from a number of issues which hinder their implementation in many potential applications. UV emitters are based on AlGaN heterostructures which usually have very poor external quantum efficiencies (EQEs) of less than 10%, with EQEs decreasing with emission wavelength. This makes it very challenging to realize high efficiency UV emitters whose high energy photons are capable of inactivating viruses, bacteria, and other pathogens. This work discusses recent developments made by the Zhang Research Group at the Rochester Institute of Technology in improving the efficiencies of UV LEDs and lasers.
{"title":"(Invited) III-Nitride Ultraviolet LEDs and Lasers for Applications in Biology and Medicine","authors":"Jing Zhang, Bryan Melanson, M. Seitz, Jacob Boisvere","doi":"10.1149/11308.0003ecst","DOIUrl":"https://doi.org/10.1149/11308.0003ecst","url":null,"abstract":"Solid-state ultraviolet (UV) light emitters are being developed for emerging biomedical applications such as surface sterilization, air/water purification, and medical treatments as a replacement for mercury vapor lamps. While these UV emitters offer many advantages over mercury lamps, such as more compact form factors, tunable emission wavelengths, and greatly increased lifetimes, they also suffer from a number of issues which hinder their implementation in many potential applications. UV emitters are based on AlGaN heterostructures which usually have very poor external quantum efficiencies (EQEs) of less than 10%, with EQEs decreasing with emission wavelength. This makes it very challenging to realize high efficiency UV emitters whose high energy photons are capable of inactivating viruses, bacteria, and other pathogens. This work discusses recent developments made by the Zhang Research Group at the Rochester Institute of Technology in improving the efficiencies of UV LEDs and lasers.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"12 32","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cerium ions are incorporated into proton exchange membranes (PEMs) of fuel cells to mitigate its chemical degradation caused by radical species. However, under fuel cell operating conditions, cerium ions move in in-plane direction in the cell by humidity gradient. This cerium ion transport results in cerium ion depletion leading to accelerated chemical degradation. This study developed an in-situ and operando measurement technique utilizing synchrotron high-energy X-ray fluorescence spectroscopy to monitor the cerium ion transport across the membrane under the in-plane humidity gradient. This method effectively tracks the dynamic behavior of cerium ions under fuel cell operating conditions.
燃料电池的质子交换膜（PEM）中含有铈离子，以减轻自由基造成的化学降解。然而，在燃料电池的工作条件下，铈离子会在湿度梯度的作用下在电池内沿平面方向移动。这种铈离子迁移会导致铈离子耗竭，从而加速化学降解。本研究利用同步辐射高能 X 射线荧光光谱技术开发了一种原位和操作测量技术，用于监测面内湿度梯度下铈离子在膜上的迁移。该方法可有效跟踪燃料电池运行条件下铈离子的动态行为。
{"title":"In-situ X-ray Fluorescence Analysis of In-plane Cerium-ion Distribution Under Humidity Gradients in Proton Exchange Membrane","authors":"Kaoruko Morita, Aika Takezawa, Naoki Kitano, Akira Kuwaki, Akihiko Kato, Satoshi Yamaguchi, Kazuma Shinozaki, Yuki Orikasa","doi":"10.1149/11311.0011ecst","DOIUrl":"https://doi.org/10.1149/11311.0011ecst","url":null,"abstract":"Cerium ions are incorporated into proton exchange membranes (PEMs) of fuel cells to mitigate its chemical degradation caused by radical species. However, under fuel cell operating conditions, cerium ions move in in-plane direction in the cell by humidity gradient. This cerium ion transport results in cerium ion depletion leading to accelerated chemical degradation. This study developed an in-situ and operando measurement technique utilizing synchrotron high-energy X-ray fluorescence spectroscopy to monitor the cerium ion transport across the membrane under the in-plane humidity gradient. This method effectively tracks the dynamic behavior of cerium ions under fuel cell operating conditions.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"1 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Paul Cavanaugh, Haochen Sun, Ilan Jen-La Plante, Xudong Wang, Maria Bautista, Christian Ippen, A. Kelley, David Kelley
There are significant similarities and differences in the spectroscopy and photophysics between CdSe-based and InP-based quantum dots. One of the more important differences is the presence of reversibly populated hole traps in InP/ZnSe quantum dots (QDs). These traps affect many aspects of the overall excited state dynamics. In this paper we elucidate the hole relaxation dynamics in high quality InP/ZnSe/ZnS QDs at room temperature and focus on the role of these traps. Specifically, we show that the presence of transiently populated traps results in extremely slow (tens of picoseconds to nanoseconds) hole cooling as evidenced by a significant fraction of the photoluminescence exhibiting a slow risetime following photoexcitation. Through a combination of chemical derivatization studies and density functional theory calculations, they are assigned to substitutional indium adjacent to a zinc vacancy, In3+/VZn 2-, in the ZnSe shell.
{"title":"(Invited) Luminescent InP Quantum Dots: They're Not Just Like CdSe","authors":"Paul Cavanaugh, Haochen Sun, Ilan Jen-La Plante, Xudong Wang, Maria Bautista, Christian Ippen, A. Kelley, David Kelley","doi":"10.1149/11303.0003ecst","DOIUrl":"https://doi.org/10.1149/11303.0003ecst","url":null,"abstract":"There are significant similarities and differences in the spectroscopy and photophysics between CdSe-based and InP-based quantum dots. One of the more important differences is the presence of reversibly populated hole traps in InP/ZnSe quantum dots (QDs). These traps affect many aspects of the overall excited state dynamics. In this paper we elucidate the hole relaxation dynamics in high quality InP/ZnSe/ZnS QDs at room temperature and focus on the role of these traps. Specifically, we show that the presence of transiently populated traps results in extremely slow (tens of picoseconds to nanoseconds) hole cooling as evidenced by a significant fraction of the photoluminescence exhibiting a slow risetime following photoexcitation. Through a combination of chemical derivatization studies and density functional theory calculations, they are assigned to substitutional indium adjacent to a zinc vacancy, In3+/VZn\u0000 2-, in the ZnSe shell.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"38 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liquid junctions in electrochemical cells introduce potentials that can strongly affect measurements. Such liquid-junction potential errors can exceed 100 mV. In the analysis of charge-transfer thermodynamics, error differences of 100 mV can have substantial impact on the interpretations. Discussion herein outlines an approach for eliminating the effects of liquid-junction potentials from charge-transfer analysis.
{"title":"Eliminating the Bias from Liquid-Junction Potential for Charge-Transfer Analysis","authors":"Valentine I. Vullev and Jaime O. O`Mari","doi":"10.1149/11306.0003ecst","DOIUrl":"https://doi.org/10.1149/11306.0003ecst","url":null,"abstract":"Liquid junctions in electrochemical cells introduce potentials that can strongly affect measurements. Such liquid-junction potential errors can exceed 100 mV. In the analysis of charge-transfer thermodynamics, error differences of 100 mV can have substantial impact on the interpretations. Discussion herein outlines an approach for eliminating the effects of liquid-junction potentials from charge-transfer analysis.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141063194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuming Yang, KIM Foong Kong, Young Way Teh, Guanyu Zhou, Nianhong Yu and Kankan Yu
Abstract—Silicon pitting has been observed on floating gate polysilicon layer of embedded non-volatile memory(e-NVM) process due to chemical attack caused by HBr residual interacting with moisture. This paper successfully demonstrates a new integration scheme for a robust floating gate process against silicon attack for embedded stacked/split gate non-volatile memory process. Firstly, CF4 was introduced into floating gate polysilicon etch recipe to replace HBr, which has been CMOS gate polysilicon etch gas in traditional logic process due to the advantage of higher selectivity despite the disadvantage of low vaporability, for better or cleaner process control. Secondly, an additional plasma removal stripping (PRS) clean step was added before chemical removal stripping (CRS) to give better etch by-product cleaning, even though there is no photoresist and lithography involved on the poly blanket etch for the better etch by-product cleaning. This new scheme has been verified using inline optical inspection defect-scan to prove the sufficient process margin for better mass production control that came from improved manufacturing Queue-time margin (longer waiting time) between dry-etch step, CRS step, and subsequent downstream process steps.
{"title":"A New Integration Scheme to Prevent Chemical Attack on Floating Polysilicon Gate of Non-Volatile Memory","authors":"Yuming Yang, KIM Foong Kong, Young Way Teh, Guanyu Zhou, Nianhong Yu and Kankan Yu","doi":"10.1149/11305.0003ecst","DOIUrl":"https://doi.org/10.1149/11305.0003ecst","url":null,"abstract":"Abstract—Silicon pitting has been observed on floating gate polysilicon layer of embedded non-volatile memory(e-NVM) process due to chemical attack caused by HBr residual interacting with moisture. This paper successfully demonstrates a new integration scheme for a robust floating gate process against silicon attack for embedded stacked/split gate non-volatile memory process. Firstly, CF4 was introduced into floating gate polysilicon etch recipe to replace HBr, which has been CMOS gate polysilicon etch gas in traditional logic process due to the advantage of higher selectivity despite the disadvantage of low vaporability, for better or cleaner process control. Secondly, an additional plasma removal stripping (PRS) clean step was added before chemical removal stripping (CRS) to give better etch by-product cleaning, even though there is no photoresist and lithography involved on the poly blanket etch for the better etch by-product cleaning. This new scheme has been verified using inline optical inspection defect-scan to prove the sufficient process margin for better mass production control that came from improved manufacturing Queue-time margin (longer waiting time) between dry-etch step, CRS step, and subsequent downstream process steps.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141063195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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