Linhai Guo, Li Tian, Hui Wang, Lingxue Meng, Chujun Feng
In this study, n-type doped single-crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single-crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was determined to be 1.5×10-4 Ω·cm. Furthermore, p-type doped single-crystal diamonds were successfully prepared by introducing boron during the growth process using Microwave Plasma Chemical Vapor Deposition（MPCVD）. It was demonstrated that the proposed technique can introduce impurities into single crystal diamonds to form doped conductive thin layers.
本研究利用激光诱导掺杂技术，在常温常压条件下成功制备了 n 型掺杂单晶金刚石。持续时间为纳秒的 248nm 脉冲激光束照射到浸泡在 85% 磷酸溶液中的单晶金刚石衬底上，引入磷掺杂，形成 n 型掺杂薄层。与单晶金刚石相比，掺杂区的电阻率明显降低。在沉积钛电极后，用范德保夫技术测定得到的掺杂薄膜的电阻率为 1.5×10-4 Ω-cm。此外，利用微波等离子体化学气相沉积（MPCVD）技术，在生长过程中引入硼，成功制备了p型掺杂单晶金刚石。实验证明，所提出的技术可以在单晶金刚石中引入杂质，从而形成掺杂导电薄层。
{"title":"(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition","authors":"Linhai Guo, Li Tian, Hui Wang, Lingxue Meng, Chujun Feng","doi":"10.1149/11307.0023ecst","DOIUrl":"https://doi.org/10.1149/11307.0023ecst","url":null,"abstract":"In this study, n-type doped single-crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single-crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was determined to be 1.5×10-4 Ω·cm. Furthermore, p-type doped single-crystal diamonds were successfully prepared by introducing boron during the growth process using Microwave Plasma Chemical Vapor Deposition（MPCVD）. It was demonstrated that the proposed technique can introduce impurities into single crystal diamonds to form doped conductive thin layers.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"43 27","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140966089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Present study examines the impact of the quality of the GDL non-wetting coating on water transport. It is found that there are two distinct regions defined by the coating quality which present fundamentally distinct behaviours, one region characterized by few coating defects with the second marked by significant coating degradation. Simulations consider the influence of heterogeneous wetting and pinning conditions on protruding water droplets in contact with the GDL fibrous matrix. The mixed-non-wetting behaviour for a uniform non-wetting coating having less than 25% defects is characterized by a high breakthrough pressure, yielding improved transport properties in the stable displacement regime. The coating degrades under normal operating conditions and it changes the water transport characteristics unfavorably through a significant decrease in breakthrough pressure, and an up to six-fold increase in droplet volume. Various degrees of coating degradation are considered and the corresponding Laplace pressure is determined as a function of droplet volumes at breakthrough.
{"title":"(Digital Presentation) The Effect of Coating Quality on Water Transport in the Gas Diffusion Layer of PEM Fuel Cells","authors":"Alexandru Herescu","doi":"10.1149/11311.0019ecst","DOIUrl":"https://doi.org/10.1149/11311.0019ecst","url":null,"abstract":"Present study examines the impact of the quality of the GDL non-wetting coating on water transport. It is found that there are two distinct regions defined by the coating quality which present fundamentally distinct behaviours, one region characterized by few coating defects with the second marked by significant coating degradation. Simulations consider the influence of heterogeneous wetting and pinning conditions on protruding water droplets in contact with the GDL fibrous matrix. The mixed-non-wetting behaviour for a uniform non-wetting coating having less than 25% defects is characterized by a high breakthrough pressure, yielding improved transport properties in the stable displacement regime. The coating degrades under normal operating conditions and it changes the water transport characteristics unfavorably through a significant decrease in breakthrough pressure, and an up to six-fold increase in droplet volume. Various degrees of coating degradation are considered and the corresponding Laplace pressure is determined as a function of droplet volumes at breakthrough.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"3 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Patricia Isabel R. Soriano, Gio Jerson Almonte, Chris Ivan Sungcang, Joaquin Nathaniel Perez, Angelo Earvin Sy Choi, Joseph R. Ortenero
Transition metal chalcogenides (TMCs) have been utilized as cost-effective alternatives for noble metal electrocatalysts, exhibiting comparable activity in the oxygen evolution reaction (OER). Nickel-cobalt selenide (NiCoSe) is a TMC exhibiting significant potential in reducing the overpotential of the oxygen evolution reaction (OER). A carbon-based hydrochar support is used as a scaffold for depositing NiCoSe, ensuring the dispersion and stability of the synthesized electrocatalyst. This work develops a NiCoSe/hydrochar electrocatalyst to enhance the stability and activity of the TMC towards OER. Various compositions of nickel-cobalt selenide (NiCoSe2, Ni0.85Co0.85Se, and Ni0.6Co0.4Se2) with a chitin-based hydrochar support are synthesized. The electrocatalytic activity is determined using cyclic voltammetry (CV) and linear sweep voltammetry using a three-electrode set-up. NiCoSe2 has the lowest overpotential at 179.3 mV and a Tafel slope of 163.4 mV-dec-1. This highlights the enhanced performance of NiCoSe2 compared to other compositions.
{"title":"Enhancing Stability and Activity of Transition Metal Chalcogenides: Development of Carbon-Based Hydrochar Supported Nickel-Cobalt Selenide Electrocatalyst for Oxygen Evolution Reaction","authors":"Patricia Isabel R. Soriano, Gio Jerson Almonte, Chris Ivan Sungcang, Joaquin Nathaniel Perez, Angelo Earvin Sy Choi, Joseph R. Ortenero","doi":"10.1149/11301.0003ecst","DOIUrl":"https://doi.org/10.1149/11301.0003ecst","url":null,"abstract":"Transition metal chalcogenides (TMCs) have been utilized as cost-effective alternatives for noble metal electrocatalysts, exhibiting comparable activity in the oxygen evolution reaction (OER). Nickel-cobalt selenide (NiCoSe) is a TMC exhibiting significant potential in reducing the overpotential of the oxygen evolution reaction (OER). A carbon-based hydrochar support is used as a scaffold for depositing NiCoSe, ensuring the dispersion and stability of the synthesized electrocatalyst. This work develops a NiCoSe/hydrochar electrocatalyst to enhance the stability and activity of the TMC towards OER. Various compositions of nickel-cobalt selenide (NiCoSe2, Ni0.85Co0.85Se, and Ni0.6Co0.4Se2) with a chitin-based hydrochar support are synthesized. The electrocatalytic activity is determined using cyclic voltammetry (CV) and linear sweep voltammetry using a three-electrode set-up. NiCoSe2 has the lowest overpotential at 179.3 mV and a Tafel slope of 163.4 mV-dec-1. This highlights the enhanced performance of NiCoSe2 compared to other compositions.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"2 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Omkar Phadke, Tae-Hyeon Kim, Yuan-Chun Luo, Shimeng Yu
The ferroelectric field effect transistor (FeFET) can be configured in nvCAP mode to enable a small-signal capacitive readout. Operating the FeFET in nvCAP mode for Charge-domain Compute-in-Memory provides benefits such as reduced power consumption and suppressed read disturb. In this review article, working of FeFET in nvCAP mode is described. Further, the TCAD study results are summarized to optimize the FeFET structure for maximizing the device performance in nvCAP mode, where the gate area and the overlap region decides the ON and OFF state capacitance. Next, the reliability aspects of nvCAP are discussed. The FeFET in nvCAP demonstrates an initial endurance of 106 P/E cycles, which can be further extended by 100× by performing a recovery operation. The nvCAP device shows a retention of at least 1 day at 850C for the fresh, fatigued and recovered state of the device, making it a suitable candidate for Compute-in-Memory.
{"title":"(Invited) Ferroelectric Nonvolatile Capacitive Synapse for Charge Domain Compute-in-Memory","authors":"Omkar Phadke, Tae-Hyeon Kim, Yuan-Chun Luo, Shimeng Yu","doi":"10.1149/11314.0003ecst","DOIUrl":"https://doi.org/10.1149/11314.0003ecst","url":null,"abstract":"The ferroelectric field effect transistor (FeFET) can be configured in nvCAP mode to enable a small-signal capacitive readout. Operating the FeFET in nvCAP mode for Charge-domain Compute-in-Memory provides benefits such as reduced power consumption and suppressed read disturb. In this review article, working of FeFET in nvCAP mode is described. Further, the TCAD study results are summarized to optimize the FeFET structure for maximizing the device performance in nvCAP mode, where the gate area and the overlap region decides the ON and OFF state capacitance. Next, the reliability aspects of nvCAP are discussed. The FeFET in nvCAP demonstrates an initial endurance of 106 P/E cycles, which can be further extended by 100× by performing a recovery operation. The nvCAP device shows a retention of at least 1 day at 850C for the fresh, fatigued and recovered state of the device, making it a suitable candidate for Compute-in-Memory.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"5 13","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Durability of a PEM electrolysis cell against voltage fluctuation prepared from actual wind power data was analyzed. Two fluctuation patterns were prepared; the pattern A prepared by scaling the wind power data and the pattern B prepared by applying the power distribution control (PDC), that is, converting the pattern A into an alternative sequence of a high-operating rate pattern and a low-operating rate pattern. During 240-h durability tests, the current density continuously decreased for the pattern A, while no distinguishable decrease was observed for the pattern B except the initial 30 h. It was found that the performance degradation is mostly reversible and attributed to increase in the diffusion overpotential consistently with the previous studies. Our results suggest that the PDC suppresses reversible degradation by avoiding gas stagnation at the anode surface, which is important for mitigating irreversible degradation during long-term operation.
分析了 PEM 电解槽对根据实际风力数据制备的电压波动的耐久性。研究人员制备了两种波动模式：通过缩放风力数据制备的模式 A 和通过应用功率分配控制（PDC）制备的模式 B，即把模式 A 转换为高工作速率模式和低工作速率模式的替代序列。在 240 小时的耐久性测试中，图案 A 的电流密度持续下降，而图案 B 除最初的 30 小时外没有观察到明显的下降。我们的研究结果表明，PDC 可通过避免阳极表面的气体停滞来抑制可逆降解，这对于减轻长期运行过程中的不可逆降解非常重要。
{"title":"Mitigation of Performance Degradation of PEM Water Electrolyzers by Power Distribution Control of Fluctuating Renewable Energy","authors":"Keiji Watanabe, Yasir Arafat Hutapea, Akari Hayashi","doi":"10.1149/11309.0017ecst","DOIUrl":"https://doi.org/10.1149/11309.0017ecst","url":null,"abstract":"Durability of a PEM electrolysis cell against voltage fluctuation prepared from actual wind power data was analyzed. Two fluctuation patterns were prepared; the pattern A prepared by scaling the wind power data and the pattern B prepared by applying the power distribution control (PDC), that is, converting the pattern A into an alternative sequence of a high-operating rate pattern and a low-operating rate pattern. During 240-h durability tests, the current density continuously decreased for the pattern A, while no distinguishable decrease was observed for the pattern B except the initial 30 h. It was found that the performance degradation is mostly reversible and attributed to increase in the diffusion overpotential consistently with the previous studies. Our results suggest that the PDC suppresses reversible degradation by avoiding gas stagnation at the anode surface, which is important for mitigating irreversible degradation during long-term operation.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"91 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermally oxidized SiO2/Si and GeO2/Ge are difficult to form very thin oxide films by atomic layer deposition (ALD) due to the chemical inertness of the oxide film surface. In this study, the effect of surface modification of insulating films by the UV-Ozone (UVO) method on ALD was investigated with the aim of controlling the atomic layer thickness and producing a uniform oxide film. The results show that UVO treatment can deposit atomic layer-thick films on SiO2 or GeO2 without delay. This may be due to the formation of dangling bonds on the oxide film surface, which improves the reactivity between the surface and the precursor during initial layer formation.
{"title":"Realization of Atomically Uniform ALD-Al2O3 and TiO2 on SiO2 and GeO2 by UV-Ozone Treatment","authors":"Yoshiharu Kirihara, Tomoki Yoshida, Sorato Mikawa, Shunichi Ito, Ryousuke Ishikawa, Hiroshi Nohira","doi":"10.1149/11302.0035ecst","DOIUrl":"https://doi.org/10.1149/11302.0035ecst","url":null,"abstract":"Thermally oxidized SiO2/Si and GeO2/Ge are difficult to form very thin oxide films by atomic layer deposition (ALD) due to the chemical inertness of the oxide film surface. In this study, the effect of surface modification of insulating films by the UV-Ozone (UVO) method on ALD was investigated with the aim of controlling the atomic layer thickness and producing a uniform oxide film. The results show that UVO treatment can deposit atomic layer-thick films on SiO2 or GeO2 without delay. This may be due to the formation of dangling bonds on the oxide film surface, which improves the reactivity between the surface and the precursor during initial layer formation.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"65 15","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we have fabricated a side-gated organic electrochemical transistor (OECT) where the source, drain, and gate terminals are screen-printed on a flexible polyethylene terephthalate substrate through a scalable screen-printing process. The semiconducting channel material is made of polyethylene dioxythiophene: polystyrene sulfonate (PEDOT: PSS), applied via spray coating. The OECT operates by volumetric gating of the channel through a gel electrolyte containing poly sodium 4-styrene sulfonate, transitioning highly conductive PEDOT+ to PEDOT0 through de-doping, biased by a positive gate voltage. Additionally, the OECT displayed a transconductance (gm) of 62.5 µA/V, mobility (µ) of 6.6×106 cm2 / Vs, and a threshold voltage (Vth) of -0.39 V, with the ON/OFF ratio being relatively low at 33.2. The repeatability was confirmed through the fabrication of three devices that exhibited nearly identical behavior. Future work emphasizes functionalizing the electrolyte to detect biomolecules such as glucose, pH, and ion species.
{"title":"Flexible Organic Electrochemical Transistor Based on Conjugated Conducting Polymers","authors":"Shah Zayed Riam, Md Najmul Islam, Tasnim Sarker, Vinay Budhraja, Shawana Tabassum","doi":"10.1149/11306.0007ecst","DOIUrl":"https://doi.org/10.1149/11306.0007ecst","url":null,"abstract":"In this work, we have fabricated a side-gated organic electrochemical transistor (OECT) where the source, drain, and gate terminals are screen-printed on a flexible polyethylene terephthalate substrate through a scalable screen-printing process. The semiconducting channel material is made of polyethylene dioxythiophene: polystyrene sulfonate (PEDOT: PSS), applied via spray coating. The OECT operates by volumetric gating of the channel through a gel electrolyte containing poly sodium 4-styrene sulfonate, transitioning highly conductive PEDOT+ to PEDOT0 through de-doping, biased by a positive gate voltage. Additionally, the OECT displayed a transconductance (gm) of 62.5 µA/V, mobility (µ) of 6.6×106 cm2 / Vs, and a threshold voltage (Vth) of -0.39 V, with the ON/OFF ratio being relatively low at 33.2. The repeatability was confirmed through the fabrication of three devices that exhibited nearly identical behavior. Future work emphasizes functionalizing the electrolyte to detect biomolecules such as glucose, pH, and ion species.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"24 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tayebeh Sharifi, Blaž Bohinc, Dmitrii Deev, Marko Strok, A. Lapanje, Tomaž Rijavec
Recent advancements in solar energy conversion have identified bio-photoelectrochemical hybrids as one of the most promising sustainable techniques. This study integrates BiVO4 and TiO2 semiconductors with photoautotrophic microorganisms (e.g., Algae) to enhance solar energy conversion. Thin films of these materials were prepared and characterized, revealing a relatively smooth surface for BiVO4 while structures for TiO2 thin films deposited as nanorods. Optical properties showed band gaps of ≤ 3.1 and 2.4 eV for TiO2 and BiVO4, respectively. The point of zero charge of materials was investigated, indicating that naturally occurring biofilm formation might not be favorable for as-prepared materials. To overcome this challenge, we aimed to use polyelectrolytes to enhance attachment of cells on the surface of semiconductor and in this regards we determined the biocompatibility of using this approach. Photoelectrochemical (PEC) measurements were conducted to evaluate solar energy conversion efficiency. This study offers insights into optimizing biosystem attachment, biofilm stability, and PEC performance of coupled semiconductors with photoautotrophic microorganisms as one photoelectrode in PEC cell, advancing sustainable solar energy conversion technologies.
{"title":"Development of Bio-Photoelectrochemical Hybrids for Solar Energy Conversion","authors":"Tayebeh Sharifi, Blaž Bohinc, Dmitrii Deev, Marko Strok, A. Lapanje, Tomaž Rijavec","doi":"10.1149/11310.0043ecst","DOIUrl":"https://doi.org/10.1149/11310.0043ecst","url":null,"abstract":"Recent advancements in solar energy conversion have identified bio-photoelectrochemical hybrids as one of the most promising sustainable techniques. This study integrates BiVO4 and TiO2 semiconductors with photoautotrophic microorganisms (e.g., Algae) to enhance solar energy conversion. Thin films of these materials were prepared and characterized, revealing a relatively smooth surface for BiVO4 while structures for TiO2 thin films deposited as nanorods. Optical properties showed band gaps of ≤ 3.1 and 2.4 eV for TiO2 and BiVO4, respectively. The point of zero charge of materials was investigated, indicating that naturally occurring biofilm formation might not be favorable for as-prepared materials. To overcome this challenge, we aimed to use polyelectrolytes to enhance attachment of cells on the surface of semiconductor and in this regards we determined the biocompatibility of using this approach. Photoelectrochemical (PEC) measurements were conducted to evaluate solar energy conversion efficiency. This study offers insights into optimizing biosystem attachment, biofilm stability, and PEC performance of coupled semiconductors with photoautotrophic microorganisms as one photoelectrode in PEC cell, advancing sustainable solar energy conversion technologies.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"43 26","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140966090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anabela Veloso, Geert Eneman, Bjorn Vermeersch, Philippe Matagne, Roger Loo, Kateryna Serbulova, Shih-Hung Chen, Naoto Horiguchi, Julien Ryckaert
We report on several key elements for enabling advanced compute scaling. At transistor level, as we are entering the nanosheet (NS) era, the focus lies on single-level NSFETs consisting of several vertically stacked NS per device, which can evolve into 3D stacked configurations like the so-called complementary FET (CFET) with potentially different materials/crystal orientations for the stacked channels. New device connectivity schemes are also becoming possible thanks to the trend towards using both wafer sides, started with the move of on-chip power distribution to the wafer’s backside. As devices are becoming sandwiched and accessed from levels above and below them, that also allows interesting new opportunities for transistor engineering, some examples of which will be discussed here. In parallel, from a system level’s perspective, a (r)evolution towards smart disintegration, enabling higher flexibility and hybridized technology platforms, is expected to further allow new scaling paths, also as it can help ease the introduction of new materials and device architectures.
{"title":"(Invited) Advanced Compute Scaling: A New Era of Exciting, Sustainability-Aware Innovations with Nanosheet-Based Devices, Increased Interdisciplinary Synergies, and (R)Evolution Towards Higher Versatility","authors":"Anabela Veloso, Geert Eneman, Bjorn Vermeersch, Philippe Matagne, Roger Loo, Kateryna Serbulova, Shih-Hung Chen, Naoto Horiguchi, Julien Ryckaert","doi":"10.1149/11302.0013ecst","DOIUrl":"https://doi.org/10.1149/11302.0013ecst","url":null,"abstract":"We report on several key elements for enabling advanced compute scaling. At transistor level, as we are entering the nanosheet (NS) era, the focus lies on single-level NSFETs consisting of several vertically stacked NS per device, which can evolve into 3D stacked configurations like the so-called complementary FET (CFET) with potentially different materials/crystal orientations for the stacked channels. New device connectivity schemes are also becoming possible thanks to the trend towards using both wafer sides, started with the move of on-chip power distribution to the wafer’s backside. As devices are becoming sandwiched and accessed from levels above and below them, that also allows interesting new opportunities for transistor engineering, some examples of which will be discussed here. In parallel, from a system level’s perspective, a (r)evolution towards smart disintegration, enabling higher flexibility and hybridized technology platforms, is expected to further allow new scaling paths, also as it can help ease the introduction of new materials and device architectures.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"67 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Daniel Francis, Xiaoyang Ji, Sai Charan Vanjari, Marko Tadjer, Tatyana Feygelson, James Spencer Lundh, Hannah Masten, Joseph Spencer, A. Jacobs, Travis J. Anderson, Karl D. Hobart, Bradford Pate, Martin Kuball, Felix Ejeckam
We demonstrate unseeded lateral overgrowth of nanocrystalline diamond as a way of increasing the thermal conductivity of thin layers of diamond. The technique can be used as a way of growing diamond on top of semiconductors, creating a thin layer of high thermal conductivity diamond in direct contact with semiconductors and allowing for the encasement of GaN in high thermal conductivity diamond.
{"title":"Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface","authors":"Daniel Francis, Xiaoyang Ji, Sai Charan Vanjari, Marko Tadjer, Tatyana Feygelson, James Spencer Lundh, Hannah Masten, Joseph Spencer, A. Jacobs, Travis J. Anderson, Karl D. Hobart, Bradford Pate, Martin Kuball, Felix Ejeckam","doi":"10.1149/11307.0015ecst","DOIUrl":"https://doi.org/10.1149/11307.0015ecst","url":null,"abstract":"We demonstrate unseeded lateral overgrowth of nanocrystalline diamond as a way of increasing the thermal conductivity of thin layers of diamond. The technique can be used as a way of growing diamond on top of semiconductors, creating a thin layer of high thermal conductivity diamond in direct contact with semiconductors and allowing for the encasement of GaN in high thermal conductivity diamond.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"81 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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