Advanced Materials最新文献

10%, that is, over 32 million patients-suffer from inadequate anesthesia monitoring in surgical procedures yearly, global-results in unwanted intraoperative risks. On-site, precise analysis of anesthesia concentration during patient surgery is highly desired yet has not been achieved owing to the lack of a satisfactory biosensor device: it allows sample collection-and-detection seamlessly and in a timely manner. Here, we introduce a new chiral plasma biosensor, a tandem integrating of one 3D nano-helical silver array with an optofluidic chip that enables real-time depth of anesthesia monitoring during surgery. The patient's blood flows into and is processed through our device's designed channel, where capillary-driven flow enables rapid plasma separation from whole blood. The isolated plasma is then directly delivered to the surface-enhanced Raman scattering (SERS) sensing region, and diverse functional anesthetics in blood are meanwhile recognized by the chiral plasma detector. The cost-effective sensor enables the detection limitation at a level of 0.1 µg/mL, and more importantly, all analyses are completed within a minute level, showing an advance compared to current hour/day suboptimal temporal resolution. We further apply this device in the clinic, monitor the anesthetics, and offer individual drug metabolism profiles in various patients. In addition, this precise, on-site, and real-time biochip features a user-friendly diagnostic system that uses mobile applications and portable accessories to address critical clinical needs, providing an opportunity for personalized anesthesia management based on patient-specific needs.

The spin valve features a magnetic multilayer structure, wherein the resistance of the intervening non-magnetic layer can be modulated by adjusting the spin orientations of adjacent magnetic layers. While ferroelectricity is often regarded as analogous to ferromagnetism, a device analogous to a spin valve-a ferroelectric valve capable of modulating resistance through alterations in the polarization orientations of neighboring ferroelectric layers-has yet to be realized. This study constructs a ferroelectric valve consisting of a LaTiO_3.5/LaTiO₃/LaTiO_3.5 multilayer structure and demonstrated that the electrical resistance of LaTiO₃ varies with the switching of ferroelectric polarization in adjacent LaTiO_3.5 layers between parallel and antiparallel configurations. Using aberration-corrected transmission electron microscopy combined with first-principles calculations, atomic and electronic structural changes within the ferroelectric valve under parallel and antiparallel polarization configurations are systematically investigated. The findings reveal that when the polarization orientations of adjacent ferroelectric LaTiO_3.5 layers are parallel, the conductive LaTiO₃ layer exhibits a high-resistance state. Conversely, when these polarizations are antiparallel, the LaTiO₃ layer demonstrates a low-resistance state. Notably, this ferroelectric valve displays strong anisotropic conductivity and its preferred conducting direction can be modulated by varying the polarization orientations. Our study establishes the structural and electronic basis for a ferroelectric valve, demonstrating its operational mechanism at the atomic scale. This discovery offers promising prospects for designing next-generation ferroelectric memory components.

Tin (Sn²⁺) perovskites are promising lead-free semiconductors for high-performance p-type thin-film transistors (TFTs), yet their reproducibility and reliability remain a major obstacle. Subtle variations in precursor chemistry and solvent coordination critically influence colloidal dynamics and crystallization, leading to inconsistent film quality and device performance. Here, we systematically benchmark multiple commercial Sn²⁺ precursors across both solution and vapor deposition routes. While solution-processed devices exhibit strong precursor dependence, vapor-deposited films yield consistent TFT performance, achieving hole mobility (∼30 cm² V^-1 s^-1) and excellent stability regardless of precursor origin. By leveraging thermodynamically driven separation of volatile impurities prior to film nucleation, the vapor-phase process standardizes crystallization dynamics and enables precursor-agnostic formation of uniform and dense films with large grains. Built on this robust and scalable platform, integrated p-type Sn²⁺-perovskite/n-type oxide circuits deliver high gain and ultra-low static power consumption at the picowatt level, establishing vapor-phase deposition as a reliable route for low-power complementary electronics.

Artificial photosynthesis of H₂O₂ offers a sustainable route to decentralized chemical production, yet remains limited by sluggish oxygen reduction kinetics, rapid charge recombination, and undesired decomposition of H₂O₂ on catalyst active sites. Herein, we report a Zn₃In₂S₆ catalyst (Ga-ZvIS) featuring Ga-on-In substitution and Zn vacancies that together establish electron-hole asymmetry and weaken In─O bonding. Ga substitution on In sites lowers the In-5p-band center level and reduces H₂O₂ adsorption strength, thereby suppressing surface decomposition, while Zn vacancies serve as hole-localized domains that accelerate isopropanol oxidation and furnish the protons required for the two-electron oxygen reduction reaction (2e^- ORR). This site-specific dopant-defect interplay produces energetically differentiated electron- and hole-dominated regions, promotes directional charge migration, and sustains the 2e^- ORR pathway. The optimized catalyst exhibits a H₂O₂ production rate of 187.8 µmol g^{- 1} min^{- 1} in O₂-saturated aqueous isopropanol, outperforming most reported photocatalysts. Kelvin probe force microscopy and femtosecond transient absorption spectroscopy confirm efficient carrier separation consistent with the built-in electrostatic potential arising from electron-hole asymmetry, while DFT calculations reveal favorable O₂ adsorption and weakened H₂O₂ binding on Ga-In sites. A proof-of-concept continuous-flow photoreactor further demonstrates in situ Fenton-assisted oxidation of organic contaminants, validating the practical utilization of the photosynthesized H₂O₂.